JP6514281B2 - レーザ構成要素およびレーザ構成要素を製造するための方法 - Google Patents
レーザ構成要素およびレーザ構成要素を製造するための方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 232
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 130
- 230000005855 radiation Effects 0.000 claims description 128
- 229910000679 solder Inorganic materials 0.000 claims description 47
- 230000003287 optical effect Effects 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 230000013011 mating Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 238000005476 soldering Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
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Description
110 レーザ・チップ
111 面
112 面
115 放出ファセット
120 チップ・キャリア
125 肩部
130 ハウジング
140 基部
141 端子ピン
142 取り付け区画
149 保持部分
150 キャップ
159 レンズ
160 変換素子
161 蛍光体層
162 反射層
163 熱伝導層
165 開口部
167 はんだ面
169 レンズ
190 レーザ放射
191 照射領域
195 活性領域
263 熱伝導層
Claims (20)
- レーザ構成要素(100)であって、
ハウジング(130)と、
前記ハウジング(130)内に配置されているレーザ・チップ(110)と、
放射変換のための変換素子(160)であって、前記ハウジング(130)内に配置されており、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、変換素子(160)と、
を備え、
前記変換素子(160)は、蛍光体層(161)と、前記蛍光体層(161)から熱を放散するための熱伝導層(163)と、前記熱伝導層(163)上に配置される金属層の形態で構成されるはんだパッド(167)とを備え、
前記変換素子(160)は、前記はんだパッド(167)によって、および、はんだを用いて、前記レーザ構成要素(100)のさらなる構成要素部分に機械的かつ熱的に接続される、レーザ構成要素(100)。 - 前記蛍光体層(161)は、1つの蛍光体または複数の蛍光体が内部に埋め込まれている熱伝導性材料を含む、
請求項1に記載のレーザ構成要素。 - 前記熱伝導層(163)は、
材料である、金属、セラミック、ダイヤモンド、サファイア、カーボン・ナノチューブが埋め込まれているマトリクス材のうちの1つから形成される、
請求項1または2に記載のレーザ構成要素。 - 前記蛍光体層(161)は前記熱伝導層(163)によって部分的に遮蔽されており、前記蛍光体層(161)は、前記蛍光体層(161)が前記熱伝導層(163)によって遮蔽されていない領域において、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、
請求項1〜3の何れか1項に記載のレーザ構成要素。 - 前記熱伝導層(163)は開口部(165)を有するフレーム形状構成を備え、
前記蛍光体層(161)は、前記熱伝導層(163)の前記開口部(165)を介して、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、
請求項1〜4のいずれか一項に記載のレーザ構成要素。 - 前記変換素子(160)はさらなる熱伝導層(263)を備え、
前記蛍光体層(161)は、前記熱伝導層(163)と前記さらなる熱伝導層(263)との間に配置される、
請求項1〜5のいずれか一項に記載のレーザ構成要素。 - 前記さらなる熱伝導層(263)は、開口部を有するフレーム形状構成を備え、
前記さらなる熱伝導層(263)の開口部を介して、光を放出可能である、
請求項6に記載のレーザ構成要素。 - 前記変換素子(160)は前記蛍光体層(161)上に配置されている反射層(162)を備え、
前記蛍光体層(161)は、前記反射層(162)を介して、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、
請求項1〜7のいずれか一項に記載のレーザ構成要素。 - 前記反射層(162)および前記熱伝導層(163)は、前記レーザ・チップ(110)に向かい合う前記蛍光体層(161)上に配置され、
前記蛍光体層(161)は、前記熱伝導層(163)によって部分的に遮蔽され、
前記反射層(162)は、前記蛍光体層(161)が前記熱伝導層(163)によって遮蔽されていない領域内に配置される、
請求項8に記載のレーザ構成要素。 - 前記反射層(162)および前記熱伝導層(163)は、前記レーザ・チップ(110)に向かい合う前記蛍光体層(161)上に配置され、
前記熱伝導層(163)は、開口部(165)を有するフレーム形状構成を備え、
前記反射層(162)は、前記蛍光体層(161)上で、前記熱伝導層(163)の開口部(165)内に配置される、
請求項8または9に記載のレーザ構成要素。 - 前記ハウジング(130)は、基部(140)と、前記基部(140)に接続されているキャップ(150)とを備える、
請求項1〜10のいずれか一項に記載のレーザ構成要素。 - 前記基部(140)は、突出取り付け区画(142)を備える、
請求項11に記載のレーザ構成要素。 - 前記変換素子(160)は、前記突出取り付け区画(142)上に配置され、
前記変換要素(160)は、前記はんだパッド(167)によって、および、前記はんだを用いて前記突出取り付け区画(142)に機械的かつ熱的に接続される、
請求項12に記載のレーザ構成要素。 - 前記レーザ・チップ(110)は、チップ・キャリア(120)上に配置されており、
前記チップ・キャリア(120)は、前記突出取り付け区画(142)上に配置されている、
請求項12または13に記載のレーザ構成要素。 - 前記レーザ・チップ(110)および前記変換素子(160)は、前記突出取り付け区画(142)上に配置されているチップ・キャリア(120)上に配置され、
前記レーザチップ(110)は、前記チップキャリア(120)の取り付け面に配置され、
前記変換素子(160)は、前記チップキャリア(120)の、前記取り付け面に垂直に向けられた面上に配置され、
前記変換素子(160)は、前記レーザチップ(110)に向かい合う面上に前記レーザ放射(190)が照射されるように、前記チップキャリア(120)に対して突出し、
前記変換素子(160)は、前記はんだパッド(167)によって、および、前記はんだを用いて前記チップキャリア(120)に機械的かつ熱的に接続される、
請求項12に記載のレーザ構成要素。 - 前記基部(140)上に配置されている複数の熱伝導性保持部分(149)を備え、
前記変換素子(160)は、前記複数の熱伝導性保持部分(149)上に配置され、
前記変換素子(160)は、複数のはんだパッド(167)を備え、
前記変換素子(160)は、前記複数のはんだパッド(167)によって、および、前記はんだを用いて、前記熱伝導性保持部分(149)に機械的かつ熱的に接続される、
請求項11に記載のレーザ構成要素。 - 前記レーザ・チップ(110)は、前記熱伝導性保持部分(149)のうちの1つの上に配置されているか、
または、前記レーザ・チップ(110)は、チップ・キャリア(120)上に配置されており、前記チップ・キャリア(120)は、前記保持部分(149)のうちの1つの上に配置されている、
請求項16に記載のレーザ構成要素。 - 前記変換素子(160)は、光学素子(169)を備え、かつ/または、前記ハウジング(130)のキャップ(150)であって、前記ハウジング(130)の基部(140)に接続されている前記キャップ(150)が、光学素子(159)を備える、
請求項1〜17のいずれか一項に記載のレーザ構成要素。 - 前記変換素子(160)は、プレート形状に構成され、平面構成を有し、
前記変換素子(160)は、前記レーザ・チップ(110)に面し、前記レーザ・チップ(110)の前記レーザ放射(190)で照射可能である面と、光放出のための、前記面とは反対の面とを備える、
請求項1〜18のいずれか一項に記載のレーザ構成要素。 - 請求項1〜19のいずれか一項に記載のレーザ構成要素を製造するための方法であって、
レーザ・チップ(110)、放射変換のための変換素子(160)およびハウジング部分を含む前記レーザ構成要素の構成要素部分を準備するステップと、
内部に前記レーザ・チップ(110)および前記変換素子(160)が配置され、前記変換素子(160)が前記レーザ・チップ(110)のレーザ放射(190)で照射可能であるハウジング(130)が提供されるように、前記レーザ構成要素の前記構成要素部分を組み立てるステップと、
を含む、レーザ構成要素を製造するための方法。
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