JP2018014500A - レーザ構成要素およびレーザ構成要素を製造するための方法 - Google Patents
レーザ構成要素およびレーザ構成要素を製造するための方法 Download PDFInfo
- Publication number
- JP2018014500A JP2018014500A JP2017141345A JP2017141345A JP2018014500A JP 2018014500 A JP2018014500 A JP 2018014500A JP 2017141345 A JP2017141345 A JP 2017141345A JP 2017141345 A JP2017141345 A JP 2017141345A JP 2018014500 A JP2018014500 A JP 2018014500A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- conversion element
- chip
- laser component
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 235
- 230000005855 radiation Effects 0.000 claims abstract description 137
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 130
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 230000013011 mating Effects 0.000 description 8
- 238000005476 soldering Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】レーザ構成要素100は、ハウジング130と、レーザ放射190を生成するためのレーザ・チップ110と、放射変換のための蛍光体層161を備える変換素子160とを備える。放射変換に使用される変換素子160は薄層構成を有し、セラミック蛍光体層161と、蛍光体層161上に配置されている反射層162と、反射層162上に配置されている熱伝導層163とを備え、熱伝導層163によって熱拡散を行うことができ、取り付け区画142、および、基部140の残りの部分)への熱伝達を可能にすることができる。
【選択図】図1
Description
110 レーザ・チップ
111 面
112 面
115 放出ファセット
120 チップ・キャリア
125 肩部
130 ハウジング
140 基部
141 端子ピン
142 取り付け区画
149 保持部分
150 キャップ
159 レンズ
160 変換素子
161 蛍光体層
162 反射層
163 熱伝導層
165 開口部
167 はんだ面
169 レンズ
190 レーザ放射
191 照射領域
195 活性領域
263 熱伝導層
Claims (20)
- ハウジング(130)と、
前記ハウジング(130)内に配置されているレーザ・チップ(110)と、
放射変換のための変換素子(160)であって、前記ハウジング(130)内に配置されており、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、変換素子(160)と、
を備える、レーザ構成要素(100)。 - 前記変換素子(160)は、蛍光体層(161)を備える、
請求項1に記載のレーザ構成要素。 - 前記蛍光体層(161)は、1つの蛍光体または複数の蛍光体が内部に埋め込まれている熱伝導性材料を含む、
請求項2に記載のレーザ構成要素。 - 前記変換素子(160)は、前記蛍光体層(161)から熱を放散するための熱伝導層(163)を備える、
請求項2または3に記載のレーザ構成要素。 - 前記熱伝導層(163)は、
材料である、金属、セラミック、ダイヤモンド、サファイア、カーボン・ナノチューブが埋め込まれているマトリクス材のうちの1つから形成される、
請求項4に記載のレーザ構成要素。 - 前記蛍光体層(161)は前記熱伝導層(163)によって部分的に遮蔽されており、前記蛍光体層(161)は、前記蛍光体層(161)が前記熱伝導層(163)によって遮蔽されていない領域において、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、
請求項4または5に記載のレーザ構成要素。 - 前記熱伝導層(163)は開口部(165)を有するフレーム形状構成を備え、前記蛍光体層(161)は、前記熱伝導層(163)の前記開口部(165)を介して、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、
請求項4〜6のいずれか一項に記載のレーザ構成要素。 - 前記変換素子(160)はさらなる熱伝導層(263)を備え、前記蛍光体層(161)は、前記熱伝導層(161)と前記さらなる熱伝導層(263)との間に配置される、
請求項4〜7のいずれか一項に記載のレーザ構成要素。 - 前記変換素子(160)は前記蛍光体層(161)上に配置されている反射層(162)を備え、前記蛍光体層(161)は、前記反射層(162)を介して、前記レーザ・チップ(110)のレーザ放射(190)で照射可能である、
請求項2〜8のいずれか一項に記載のレーザ構成要素。 - 前記変換素子(160)は、はんだ面(167)を備える、
請求項1〜9のいずれか一項に記載のレーザ構成要素。 - 前記ハウジング(130)は、基部(140)と、前記基部(140)に接続されているキャップ(150)とを備える、
請求項1〜10のいずれか一項に記載のレーザ構成要素。 - 前記基部(140)は、突出取り付け区画(142)を備える、
請求項11に記載のレーザ構成要素。 - 前記変換素子(160)は、前記突出取り付け区画(142)上に配置されている、
請求項12に記載のレーザ構成要素。 - 前記レーザ・チップ(110)は、チップ・キャリア(120)上に配置されており、前記チップ・キャリア(120)は、前記突出取り付け区画(142)上に配置されている、
請求項12または13に記載のレーザ構成要素。 - 前記変換素子(160)は、前記チップ・キャリア(120)上に配置されている、
請求項14に記載のレーザ構成要素。 - 前記基部(140)上に配置されている複数の熱伝導性保持部分(149)を備える前記レーザ構成要素であって、前記変換素子(160)は、前記複数の熱伝導性保持部分(149)上に配置されている、
請求項11に記載のレーザ構成要素。 - 前記レーザ・チップ(110)は、前記熱伝導性保持部分(149)のうちの1つの上に配置されているか、
または、前記レーザ・チップ(110)は、チップ・キャリア(120)上に配置されており、前記チップ・キャリア(120)は、前記保持部分(149)のうちの1つの上に配置されている、
請求項16に記載のレーザ構成要素。 - 前記変換素子(160)は、光学素子(169)を備え、かつ/または、前記ハウジング(130)のキャップ(150)であって、前記ハウジング(130)の基部(140)に接続されている前記キャップ(150)が、光学素子(159)を備える、
請求項1〜17のいずれか一項に記載のレーザ構成要素。 - 前記変換素子(160)は、前記レーザ・チップ(110)に面し、前記レーザ・チップ(110)の前記レーザ放射(190)で照射可能である面と、光放出のための、前記面とは反対の面とを備える、
請求項1〜18のいずれか一項に記載のレーザ構成要素。 - 請求項1〜19のいずれか一項に記載のレーザ構成要素を製造するための方法であって、
レーザ・チップ(110)、放射変換のための変換素子(160)およびハウジング部分を含む前記レーザ構成要素の構成要素部分を準備するステップと、
内部に前記レーザ・チップ(110)および前記変換素子(160)が配置され、前記変換素子(160)が前記レーザ・チップ(110)のレーザ放射(190)で照射可能であるハウジング(130)が提供されるように、前記レーザ構成要素の前記構成要素部分を組み立てるステップと、
を含む、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016113470.8A DE102016113470A1 (de) | 2016-07-21 | 2016-07-21 | Laserbauelement |
DE102016113470.8 | 2016-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018014500A true JP2018014500A (ja) | 2018-01-25 |
JP6514281B2 JP6514281B2 (ja) | 2019-05-15 |
Family
ID=60890063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017141345A Active JP6514281B2 (ja) | 2016-07-21 | 2017-07-20 | レーザ構成要素およびレーザ構成要素を製造するための方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10431954B2 (ja) |
JP (1) | JP6514281B2 (ja) |
KR (1) | KR102346887B1 (ja) |
DE (1) | DE102016113470A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6906721B1 (ja) * | 2020-08-12 | 2021-07-21 | 三菱電機株式会社 | 半導体レーザ装置 |
US11131433B2 (en) | 2018-08-20 | 2021-09-28 | Nichia Corporation | Fluorescent module and illumination device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
KR101929465B1 (ko) * | 2016-10-18 | 2019-03-14 | 주식회사 옵텔라 | 광학모듈 |
DE102018203694B4 (de) * | 2018-03-12 | 2021-12-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bestrahlungseinheit mit Pumpstrahlungsquelle und Konversionselement |
DE102018118762A1 (de) * | 2018-08-02 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Laserbauelement mit einem Laserchip |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
JP2021027136A (ja) * | 2019-08-02 | 2021-02-22 | CIG Photonics Japan株式会社 | 光モジュール |
DE102020215038A1 (de) | 2020-11-30 | 2022-06-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung |
DE102021112359A1 (de) | 2021-05-12 | 2022-11-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische leuchtvorrichtung |
DE102021131795A1 (de) * | 2021-12-02 | 2023-06-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserbauelement und verfahren zur herstellung eines laserbauelements |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183065U (ja) * | 1984-11-07 | 1986-06-02 | ||
JP2003243761A (ja) * | 2002-02-19 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 半導体パッケージ |
JP2004207551A (ja) * | 2002-12-26 | 2004-07-22 | Ricoh Co Ltd | 光学装置およびその製造方法および光学装置部品およびその製造方法 |
WO2007105647A1 (ja) * | 2006-03-10 | 2007-09-20 | Nichia Corporation | 発光装置 |
US20080116473A1 (en) * | 2006-11-21 | 2008-05-22 | Nichia Corporation | Semiconductor light emitting device |
JP2009099664A (ja) * | 2007-10-15 | 2009-05-07 | Nichia Corp | 発光装置 |
JP2011171504A (ja) * | 2010-02-18 | 2011-09-01 | Stanley Electric Co Ltd | 発光装置 |
JP2012186326A (ja) * | 2011-03-07 | 2012-09-27 | Nichia Chem Ind Ltd | 半導体レーザ駆動装置の製造方法 |
WO2013175773A1 (ja) * | 2012-05-22 | 2013-11-28 | パナソニック株式会社 | 波長変換素子およびその製造方法ならびに波長変換素子を用いたled素子および半導体レーザ発光装置 |
WO2015020205A1 (ja) * | 2013-08-09 | 2015-02-12 | 株式会社光波 | 発光装置 |
WO2015178223A1 (ja) * | 2014-05-21 | 2015-11-26 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いた発光装置 |
US20150357790A1 (en) * | 2013-04-01 | 2015-12-10 | Lg Electronics Inc. | Laser light source device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286498A (ja) * | 1999-03-31 | 2000-10-13 | Fuji Photo Film Co Ltd | 半導体レーザモジュール、及び半導体レーザモジュールの作成方法 |
EP1278086A1 (de) * | 2001-07-18 | 2003-01-22 | Alcatel | Kugellinse und opto-elektronisches Modul mit derselben |
US7462983B2 (en) * | 2003-06-27 | 2008-12-09 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | White light emitting device |
DE102005034793B3 (de) * | 2005-07-21 | 2007-04-19 | G.L.I. Global Light Industries Gmbh | Lichtemittierende Halbleiterdiode hoher Lichtleistung |
US8410681B2 (en) * | 2008-06-30 | 2013-04-02 | Bridgelux, Inc. | Light emitting device having a refractory phosphor layer |
US9151468B2 (en) * | 2010-06-28 | 2015-10-06 | Axlen, Inc. | High brightness illumination devices using wavelength conversion materials |
DE102013101598B9 (de) * | 2013-02-18 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
JP6742684B2 (ja) * | 2014-09-30 | 2020-08-19 | 日亜化学工業株式会社 | 光部品及びその製造方法ならびに発光装置及びその製造方法 |
US10938182B2 (en) * | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
-
2016
- 2016-07-21 DE DE102016113470.8A patent/DE102016113470A1/de active Pending
-
2017
- 2017-07-19 US US15/654,136 patent/US10431954B2/en active Active
- 2017-07-20 JP JP2017141345A patent/JP6514281B2/ja active Active
- 2017-07-21 KR KR1020170092505A patent/KR102346887B1/ko active IP Right Grant
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183065U (ja) * | 1984-11-07 | 1986-06-02 | ||
JP2003243761A (ja) * | 2002-02-19 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 半導体パッケージ |
JP2004207551A (ja) * | 2002-12-26 | 2004-07-22 | Ricoh Co Ltd | 光学装置およびその製造方法および光学装置部品およびその製造方法 |
WO2007105647A1 (ja) * | 2006-03-10 | 2007-09-20 | Nichia Corporation | 発光装置 |
US20080116473A1 (en) * | 2006-11-21 | 2008-05-22 | Nichia Corporation | Semiconductor light emitting device |
JP2009099664A (ja) * | 2007-10-15 | 2009-05-07 | Nichia Corp | 発光装置 |
JP2011171504A (ja) * | 2010-02-18 | 2011-09-01 | Stanley Electric Co Ltd | 発光装置 |
JP2012186326A (ja) * | 2011-03-07 | 2012-09-27 | Nichia Chem Ind Ltd | 半導体レーザ駆動装置の製造方法 |
WO2013175773A1 (ja) * | 2012-05-22 | 2013-11-28 | パナソニック株式会社 | 波長変換素子およびその製造方法ならびに波長変換素子を用いたled素子および半導体レーザ発光装置 |
US20150357790A1 (en) * | 2013-04-01 | 2015-12-10 | Lg Electronics Inc. | Laser light source device |
WO2015020205A1 (ja) * | 2013-08-09 | 2015-02-12 | 株式会社光波 | 発光装置 |
WO2015178223A1 (ja) * | 2014-05-21 | 2015-11-26 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いた発光装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11131433B2 (en) | 2018-08-20 | 2021-09-28 | Nichia Corporation | Fluorescent module and illumination device |
US11585494B2 (en) | 2018-08-20 | 2023-02-21 | Nichia Corporation | Fluorescent module and illumination device |
JP6906721B1 (ja) * | 2020-08-12 | 2021-07-21 | 三菱電機株式会社 | 半導体レーザ装置 |
WO2022034653A1 (ja) * | 2020-08-12 | 2022-02-17 | 三菱電機株式会社 | 半導体レーザ装置 |
US11699890B2 (en) | 2020-08-12 | 2023-07-11 | Mitsubishi Electric Corporation | Semiconductor laser machine |
Also Published As
Publication number | Publication date |
---|---|
US20180026421A1 (en) | 2018-01-25 |
JP6514281B2 (ja) | 2019-05-15 |
KR102346887B1 (ko) | 2022-01-04 |
KR20180011024A (ko) | 2018-01-31 |
DE102016113470A1 (de) | 2018-01-25 |
US10431954B2 (en) | 2019-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6514281B2 (ja) | レーザ構成要素およびレーザ構成要素を製造するための方法 | |
US9595806B2 (en) | Laser light-emitting apparatus | |
US7656307B2 (en) | Vehicle lighting device and LED light source therefor | |
TWI307176B (en) | Led-array | |
JP4254276B2 (ja) | 発光装置およびその製造方法 | |
JP4182784B2 (ja) | 発光装置およびその製造方法 | |
JP2016092364A (ja) | 発光装置及び灯具 | |
US20190207071A1 (en) | Radiation-emitting component | |
US8227829B2 (en) | Semiconductor light-emitting device | |
JP6074742B2 (ja) | 光源ユニット及びこれを用いた車両用前照灯 | |
US20230033309A1 (en) | Semiconductor laser device | |
CN112636160B (zh) | 激光器 | |
JP6560902B2 (ja) | 光源装置及びこれを用いた照明装置 | |
JP6519163B2 (ja) | 光源装置、この光源装置を備えた車両用灯具及びその光源装置の製造方法 | |
JP7050045B2 (ja) | パッケージ、発光装置、およびレーザ装置 | |
CN112438000B (zh) | 半导体发光装置及半导体发光装置的制造方法 | |
KR101163850B1 (ko) | 발광 소자 패키지 | |
JP2007080867A (ja) | 発光装置 | |
JP5742629B2 (ja) | 発光装置及びこれを備えた照明器具 | |
KR100878398B1 (ko) | 고출력 led 패키지 및 그 제조방법 | |
JP2019075460A (ja) | 半導体発光素子および半導体発光装置 | |
WO2023074674A1 (ja) | 車両用灯具 | |
US20230420325A1 (en) | Thermal pad structures for led packages with reduced sizes | |
JP2023089984A (ja) | 発光装置 | |
JP3128615U (ja) | 発光ダイオード |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180828 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180829 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181121 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190411 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6514281 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |