WO2020019277A1 - 一种球形粉体填料的制备方法、由此得到的球形粉体填料及其应用 - Google Patents

一种球形粉体填料的制备方法、由此得到的球形粉体填料及其应用 Download PDF

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WO2020019277A1
WO2020019277A1 PCT/CN2018/097327 CN2018097327W WO2020019277A1 WO 2020019277 A1 WO2020019277 A1 WO 2020019277A1 CN 2018097327 W CN2018097327 W CN 2018097327W WO 2020019277 A1 WO2020019277 A1 WO 2020019277A1
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spherical
powder filler
spherical powder
siloxane
och
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PCT/CN2018/097327
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English (en)
French (fr)
Inventor
陈树真
李锐
成永红
孟国栋
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湖州五爻硅基材料研究院有限公司
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Priority to PCT/CN2018/097327 priority Critical patent/WO2020019277A1/zh
Priority to US17/263,047 priority patent/US20210309832A1/en
Priority to CN201880090639.XA priority patent/CN111868141A/zh
Priority to PCT/CN2018/099603 priority patent/WO2020019372A1/zh
Priority to CN201880090638.5A priority patent/CN111867975A/zh
Priority to PCT/CN2019/075832 priority patent/WO2020019709A1/zh
Priority to KR1020217000789A priority patent/KR102328377B1/ko
Priority to CN201980016671.8A priority patent/CN111819266B/zh
Priority to JP2021504462A priority patent/JP7333099B2/ja
Publication of WO2020019277A1 publication Critical patent/WO2020019277A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/02—Well-drilling compositions
    • C09K8/04—Aqueous well-drilling compositions
    • C09K8/06—Clay-free compositions

Definitions

  • the invention relates to the packaging of semiconductors, and more particularly to a method for preparing a spherical powder filler, the spherical powder filler obtained thereby, and applications thereof.
  • packaging materials such as plastic encapsulant, patch glue, underfill, and chip carrier board are required.
  • passive components semiconductor components, electro-acoustic devices, display devices, optical devices and radio frequency devices into equipment, high-density inerconnect (HDI), high-frequency high-speed boards, and motherboards must be used.
  • Such packaging materials and circuit boards are generally mainly composed of organic polymers such as epoxy resins and fillers, where the fillers are mainly angular or spherical silica, whose main function is to reduce the thermal expansion coefficient of organic polymers.
  • the existing filler is selected from spherical silica for tight filling gradation.
  • the chemical structure of the silica is the Q unit of Si, namely SiO 4- .
  • the signal frequency used by semiconductors is getting higher and higher, and the increase in signal transmission speed and low loss requires fillers with low induction rate and low induction loss.
  • the electrical induction rate and electrical induction loss of the material basically depend on the chemical composition and structure of the material. Silica has its inherent electrical induction rate and electrical induction loss value. Therefore, the existing filler cannot meet the lower requirements. Requirements for induction rate and low induction loss.
  • spherical silica is generally made by high-temperature dry processes such as the flame melting method and the metal silicon powder deflagration method, which are easily mixed with conductive foreign materials such as iron. It is difficult to avoid the inclusion of coarse particles and conductive foreign materials. . Moreover, once coarse particles and conductive foreign matter are mixed in, they cannot be removed dryly. Therefore, the existing fillers cannot meet the requirements of no conductive foreign matter and no coarse particles.
  • fused spherical low-radiation silica is selected from natural quartz ore. It is made by smelting and melting and spheroidizing after pickling and purifying sand, so its purity depends to a large extent on the purity of the natural mineral itself. Therefore, the existing fillers cannot meet the requirements of low radioactivity.
  • the invention aims to provide a method for preparing a spherical powder filler, the spherical powder filler obtained thereby, and applications thereof.
  • the filler provided thereby has low electromotive force, low electromotive loss, no conductive foreign matter, and no coarse particles. And low radioactivity.
  • the invention provides a method for preparing a spherical powder filler, comprising the steps of: S1, providing a spherical siloxane having a composition of 0-10% by weight of Q units and 90-100% by weight of T units; S2, the spherical siloxane Heat treatment, so that the silanol groups in the spherical siloxane are condensed to obtain the condensed silicone; and S3, a treatment agent is added to perform surface treatment on the condensed silicone to eliminate the silanol groups in the condensed siloxane to obtain a spherical shape Powder filler.
  • the weight percentage of the treatment agent is 0.5-50 wt%.
  • R 1 , R 2 , R 3 , R 4 , and R 5 in the T unit represent the same or different organic groups
  • R a1 , R b1 , R a2 , R b2 , R a3 , and R b3 in the D unit represent the same or different Different organic groups
  • R c1 , R d1 , R e1 , R c2 , R d2 , and R e2 in the M unit represent the same or different organic groups.
  • the silica of the spherical powder filler of the present invention is a T-unit, and the introduction of organic groups R 1 , R 2 , R 3 , R 4 , and R 5 greatly reduces the induced electricity. Rate and induced loss.
  • the T unit since the T unit has only three SiOSi bridging points and the thermal expansion coefficient is higher than that of the Q unit silica, an appropriate amount of Q units can be introduced to adjust the balance of the induction rate, induction loss, and thermal expansion coefficient as needed.
  • the condensation siloxane obtained by heat treatment has a high degree of condensation by heating, due to space geometric constraints, new isolated surface Si-OH and internal Si-OH will be generated, so the D-forming
  • the treating agent is used to condense the Si-OH in the condensation siloxane, and / or adding a treating agent that generates M units to cap the Si-OH in the condensing siloxane, thereby further reducing the electric induction rate and the electric loss.
  • step S1 methyltrimethoxysilane and / or phenyltrimethoxysilane and tetraethoxysilane are used as raw materials to provide a spherical siloxane.
  • the composition of the spherical siloxane in step S1 is 96-99.9% by weight of T units and 0.1-4% by weight of Q units.
  • step S2 the heat treatment is achieved by electric heating or microwave heating, which causes Si-OH in the spherical siloxane to condense to produce a SiOSi structure.
  • the equation of the condensation reaction is as follows:
  • the heat treatment temperature in step S2 is 180-650 degrees. More preferably, the temperature is 250-550 degrees. Most preferably, the temperature is 280-380 degrees. It should be understood that too low temperature will lead to incomplete condensation reaction of Si-OH, while too high temperature will cause decomposition of organic groups. For example, because the decomposition temperature of phenyl is high, when the organic group is a phenyl group, the corresponding heat treatment temperature is higher than when the organic group is an alkyl group. In a preferred embodiment, the heat treatment time is 30 minutes or more and 24 hours or less. It should be understood that the shorter the time required for higher temperatures, and the longer the time required for lower temperatures.
  • the processing agent that generates D units causes Si-OH in the condensation siloxane to further condense to produce a SiOSi structure.
  • the equation of the condensation reaction is as follows:
  • the processing agent that generates D units is selected from at least one of the group consisting of: (CH 3 ) 2 Si (OCH 3 ) 2 , (CH 3 ) 2 Si (OCH 2 CH 3 ) 2 , ( CH 3 ) HSi (OCH 3 ) 2 , (CH 3 ) HSi (OCH 2 CH 3 ) 2 , H 2 Si (OCH 3 ) 2 , H 2 Si (OCH 2 CH 3 ) 2 , (C 6 H 5 ) 2 Si (OCH 3 ) 2 , (C 6 H 5 ) 2 Si (OCH 2 CH 3 ) 2 , C 6 H 5 CH 3 Si (OCH 3 ) 2 , C 6 H 5 CH 3 Si (OCH 3 ) 2 , C 6 H 5 CH 3 Si (OCH 2 CH 3 ) 2 , C 6 H 5 CH 3 Si (OCH 2 CH 3 ) 2 , C 6 H 5 HSi (OCH 3 ) 2 , C 6 H 5 HSi (OCH 2 CH 3 )
  • the processing agent generating M units causes the Si-OH in the condensation siloxane to further condense to produce a SiOSi structure.
  • the equation of the condensation reaction is as follows:
  • the processing agent that generates M units is at least one selected from the group consisting of: (CH 3 ) 3 SiNHSi (CH 3 ) 3 , (CH 3 ) 2 C 6 H 5 SiNHSi (CH 3 ) 2 C 6 H 5 , CH 3 (C 6 H 5 ) 2 SiNHSiCH 3 (C 6 H 5 ).
  • the treating agent further includes a silane coupling agent to further eliminate Si-OH in the condensation siloxane.
  • the silane coupling agent is at least one selected from the group consisting of an epoxy silane coupling agent, an aliphatic aminosilane coupling agent, an aromatic aminosilane coupling agent, methacrylic acid Acyloxypropylsilane coupling agent, acryloxypropylsilane coupling agent, ureidopropylsilane coupling agent, chloropropylsilane coupling agent, mercaptopropylsilane coupling agent, polysulfide-based silane coupling Crosslinking agent, isocyanate propylsilane coupling agent, etc.
  • the silane coupling agent may be processed after the treatment agent generating D units and / or M units is processed, or may be used together with the treatment agent generating D units and / or M units.
  • the weight percentage of the treating agent is 1-50 wt%.
  • the treatment agent is a separate component treatment agent, such as hexamethyldisilazane, dimethyldimethoxysilane, or dimethyldichlorosilane.
  • the treatment agent is a mixed treatment agent, such as dimethyldimethoxysilane (such as 70% by weight) and hexamethyldisilazane (such as 30% by weight), vinyldimethoxy Silane (such as 50% by weight) and hexamethyldisilazane (such as 50% by weight), or 3- (2,3-glycidoxypropyl) trimethoxysilane (such as 30% by weight) and six Methyldisilazane (e.g. 70% by weight).
  • dimethyldimethoxysilane such as 70% by weight
  • hexamethyldisilazane such as 30% by weight
  • vinyldimethoxy Silane such as 50% by weight
  • hexamethyldisilazane such as 50% by weight
  • 3- (2,3-glycidoxypropyl) trimethoxysilane such as 30% by weight
  • six Methyldisilazane e.g. 70% by weight
  • the preparation method includes using dry or wet sieving or inertial classification to remove coarse particles above 75 microns in the spherical powder filler.
  • coarse particles larger than 55 microns are removed from the spherical powder filler.
  • coarse particles larger than 45 microns are removed from the spherical powder filler.
  • coarse particles above 20 microns are removed from the spherical powder filler.
  • coarse particles larger than 10 microns are removed from the spherical powder filler.
  • coarse particles larger than 5 microns are removed from the spherical powder filler.
  • coarse particles larger than 3 microns are removed from the spherical powder filler.
  • coarse particles larger than 1 micron in the spherical powder filler are removed.
  • the present invention also provides a spherical powder filler obtained according to the above preparation method, and the particle size of the spherical powder filler is 0.1-50 microns. Preferably, the particle size is 0.5-30 microns.
  • the measurement results show that the electromotive force of the spherical powder filler of the present invention at 500 MHz is only 2.5-2.8, which is less than 3, and the electromotive force of the conventional Q-unit silica filler is approximately 3.8-4.5. Therefore, the spherical powder filler of the present invention has a greatly reduced electric induction rate, and can meet the material requirements for high-frequency signals in the 5G era.
  • the measurement results show that the electrokinetic loss of the spherical powder filler of the present invention at 500 MHz is only 0.0005 to 0.002, which is less than 0.005, and the electrokinetic loss of the conventional Q unit silica filler is approximately 0.003-0.01. Therefore, the spherical powder filler of the present invention has greatly reduced induction loss, and can meet the material requirements for high-frequency signals in the 5G era.
  • the thermal expansion coefficient of the spherical powder filler of the present invention is 5-15 ppm, while the thermal expansion coefficient of the existing fused silica is about 0.5 ppm, and the crystalline silica (quartz) is 8 to 13 ppm. Therefore, the thermal expansion coefficient of the spherical powder filler of the present invention is equivalent to the thermal expansion coefficient of general inorganic fillers, and can meet the material requirements for high-frequency signals in the 5G era.
  • the present invention further provides an application of the spherical powder filler according to the above, wherein spherical powder fillers of different particle sizes are closely packed and graded in a resin to form a composite material.
  • the composite material is suitable for a semiconductor packaging material, a circuit board and an intermediate semi-finished product thereof.
  • the packaging material is a plastic encapsulant, a patch glue, an underfill, or a chip carrier board.
  • the molding compound is a molding compound in the form of DIP, a molding compound in the form of SMT, a molding compound in MUF, FO-WLP, and FCBGA.
  • the circuit board is an HDI, a high-frequency high-speed board, or a motherboard.
  • ⁇ Thermal expansion coefficient of composite material
  • V 1 Volume fraction of resin
  • ⁇ 1 Thermal expansion coefficient of resin
  • V 2 Volume fraction of filler
  • ⁇ 2 Thermal expansion coefficient of filler.
  • the thermal expansion coefficient ⁇ 1 of the resin is 60 to 120 ppm.
  • the thermal expansion coefficient ⁇ 2 of the spherical powder filler of the present invention is much lower than the thermal expansion coefficient of the resin at 5 to 15 ppm. It can reduce the resin composition after curing like the existing inorganic filler.
  • the coefficient of thermal expansion is matched with the thermal expansion of the wire metal or wafer. Therefore, by adjusting the volume fraction of the resin and the spherical powder filler, the thermal expansion coefficient required by the composite material can be designed according to the needs to form a packaging material, a circuit board and its intermediate semi-finished product.
  • ⁇ Dielectric of the composite
  • V 1 resin volume fraction
  • ⁇ 1 YUDEN of resin
  • V 2 volume fraction of filler
  • ⁇ 2 the filler Yuden rate.
  • the electrical loss of the composite material is determined by the electrical loss of the resin and filler, and the number of polar groups on the surface of the filler.
  • the spherical powder filler according to the present invention has a low electromotive force, and the fewer polar groups it has on the surface of the filler, therefore, the composite material has a low electromotive loss.
  • the filler obtained by the method for preparing a spherical powder filler according to the present invention has a low induction rate and a low induction loss.
  • the raw materials of the preparation method are organic materials, which do not involve angular crushed quartz that is commonly used, and can be refined by industrial methods such as distillation, the spherical powder filler formed does not contain radioactive elements such as uranium and plutonium, so it meets no Requirements for conductive foreign bodies, no coarse particles, and low radioactivity.
  • the synthesis parameters can be appropriately adjusted to produce a spherical powder filler having a particle diameter of 0.1 to 50 microns.
  • the average particle diameter was measured with a laser particle size analyzer LA-700 from HORIBA.
  • the solvent is isopropanol;
  • the specific surface area was measured by FlowSorbIII2305 of SHIMADZU;
  • Uranium and plutonium content were determined by Agilent 7700X ICP-MS.
  • the sample preparation method is to prepare the sample completely with hydrofluoric acid after burning at 800 degrees;
  • Q units and T units are calculated from the frontal integrated area in the range of -80 to -120 ppm and the frontal integrated area in the range of -30 to -80 ppm on the solid 28 Si-NMR nuclear magnetic resonance spectrum.
  • the induction rate and the induction loss were measured by KEYCOM's perturbation method, sample cavity closed cavity resonance method, induction rate, induction loss measurement device Model No. DPS18.
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to Japanese patents P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make different compositions. Spherical silicone.
  • the spherical siloxane was heat-treated at 350 ° C for one hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a dry method, and the treatment agent was hexamethyldisilazane.
  • the sample was dried at 150 ° C for 3 hours after the treatment.
  • Hexamethyldisilazane treatment amount (%) i.e. weight percentage added amount
  • weight percentage added amount (weight of hexamethyldisilazane / (weight of hexamethyldisilazane + weight of spherical siloxane)) ⁇ %.
  • the samples obtained according to Examples 1 to 5 are all less than 3 inductive rate and less than 0.005 inductive loss, so as to meet the low inducement rate (small signal delay) and low inducement loss of fillers in the 5G era. (Less signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at different temperatures for 1 hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a dry method, and the treatment agent was hexamethyldisilazane.
  • the sample was dried at 150 ° C for 3 hours after the treatment.
  • Hexamethyldisilazane treatment amount (%) (weight of hexamethyldisilazane / (weight of hexamethyldisilazane + weight of spherical siloxane)) ⁇ %.
  • the synthesis and determination results are listed in the following Table 2:
  • the samples obtained according to Examples 6 to 8 are all less than 3 inductive rate and less than 0.005 inductive loss, so as to meet the low inducement rate (small signal delay) and low inductive loss of fillers in the 5G era. (Less signal loss).
  • phenyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods in Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at different temperatures for 1 hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a dry method, and the treatment agent was hexamethyldisilazane.
  • the sample was dried at 150 ° C for 3 hours after the treatment.
  • Hexamethyldisilazane treatment amount (%) (weight of hexamethyldisilazane / (weight of hexamethyldisilazane + weight of spherical siloxane)) ⁇ %.
  • the synthesis and determination results are listed in Table 3 below:
  • the samples obtained according to Examples 9 to 11 are all less than 3 inductive rate and less than 0.005 inductive loss, so as to meet the low inducement rate (small signal delay) and low inducement loss of fillers in the 5G era. (Less signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a dry method.
  • the treatment agent was dimethyldimethoxysilane, and the sample was dried at 150 ° C for 3 hours after the treatment.
  • the induction rate is less than 3, and the induction loss is less than 0.005, so that the 5G era filler has a low induction rate (small signal delay) and a low induction loss (less signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane is surface-treated by a dry method.
  • the treating agents are dimethyldimethoxysilane (70% by weight) and hexamethyldisilazane (30% by weight).
  • the temperature is 150 ° C for 3 hours after the treatment. An example sample was obtained by drying.
  • Processing amount of mixed treatment agent (weight of mixed treatment agent / (weight of mixed treatment agent + weight of spherical siloxane)) ⁇ %.
  • the sample obtained according to Example 13 has an inducement rate of less than 3 and an inducement loss of less than 0.005, so that the 5G era filler has a low inducement rate (small signal delay) and a low inducement loss (less signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane is subjected to a surface treatment by a dry method.
  • the treating agents are vinyl dimethoxysilane (50% by weight) and hexamethyldisilazane (50% by weight), and dried at 150 ° C for 3 hours after treatment. Example samples were obtained.
  • Processing amount of mixed treatment agent (weight of mixed treatment agent / (weight of mixed treatment agent + weight of spherical siloxane)) ⁇ %.
  • the inducement rate is less than 3, and the inducement loss is less than 0.005, so that the 5G era filler has low inducement rate (small signal delay) and low inducement loss (small signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane was surface-treated by a dry method, and the treating agents were 3- (2,3-glycidoxypropyl) trimethoxysilane (30% by weight) and hexamethyldisilazane (70 % By weight) and dried at 150 ° C for 3 hours after treatment to obtain an example sample.
  • Processing amount of mixed treatment agent (weight of mixed treatment agent / (weight of mixed treatment agent + weight of spherical siloxane)) ⁇ %.
  • the induction rate is less than 3, and the induction loss is less than 0.005, so that the 5G era filler has a low induction rate (small signal delay) and low induction loss (less signal loss).
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a dry method, and the treatment agent was hexamethyldisilazane.
  • the sample was dried at 150 ° C for 3 hours after the treatment.
  • Hexamethyldisilazane treatment amount (weight of hexamethyldisilazane / (weight of hexamethyldisilazane + weight of spherical siloxane)) ⁇ %.
  • the synthesis and determination results are listed in Table 8 below:
  • the sample obtained according to Example 16 has an inducement rate of less than 3 and an inducement loss of less than 0.005, so that the 5G era filler has a low inducement rate (small signal delay) and a low inducement loss (less signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a dry method.
  • the treatment agent was dimethyldichlorosilane.
  • the sample was dried at 150 ° C for 3 hours after the treatment.
  • Amount of dimethyldichlorosilane treatment (weight of dimethyldichlorosilane / (weight of dimethyldichlorosilane + weight of spherical siloxane)) ⁇ %.
  • Example 17 has an inducement rate of less than 3 and an inducement loss of less than 0.005, so that the 5G era filler has a low inducement rate (small signal delay) and a low inducement loss (small signal loss).
  • methyltrimethoxysilane and tetraethoxysilane as raw materials, refer to the methods of Japanese Patent P2001-192452A, P2002-322282A, JP-A-6-49209, JP-A-6-279589, and P2000-345044A to make the average particle size. 2 micron spherical siloxane.
  • the spherical siloxane was heat-treated in an electric furnace at 350 degrees for 1 hour.
  • the heat-treated spherical siloxane was subjected to a surface treatment by a wet method.
  • the treatment agent was dimethyldimethoxysilane, and the solvent was methyl ethyl ketone.
  • the sample was dried at 150 ° C for 3 hours after the treatment.
  • Amount of dimethyldimethoxysilane treatment (weight of dimethyldimethoxysilane / (weight of dimethyldimethoxysilane + weight of spherical siloxane)) ⁇ %.
  • the electromotive force is less than 3 and the electromotive force loss is less than 0.005, so that the 5G era fillers have low electromotive force (small signal delay) and low electromotive force loss (less signal loss) Claim.
  • sample obtained in the foregoing embodiments 1 to 18 may be subjected to a vertex cutting step to remove coarse particles.
  • methods such as dry or wet sieving or inertial classification are used to remove 75, 55, 45, 20, 10, 5, 3, or 1 micron or more of the spherical powder filler according to the size of the semiconductor chip. Coarse particles.

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Abstract

本发明涉及一种球形粉体填料的制备方法，包括步骤：S1，提供组成为0-10wt％的Q单位和90-100wt％的T单位的球形硅氧烷；S2，对该球形硅氧烷进行热处理，以使得球形硅氧烷中的硅羟基发生缩合以得到缩合硅氧烷；以及S3，加入处理剂对缩合硅氧烷进行表面处理，以消除缩合硅氧烷中的硅羟基以得到球形粉体填料，该处理剂的重量百分比添加量为0.5-50wt％，该处理剂包括生成D单位和/或M单位的处理剂。本发明还提供一种根据上述的制备方法得到的球形粉体填料。本发明又提供一种根据上述的球形粉体填料的应用。本发明提供的填料具有低诱电率、低诱电损失、无导电异物、无粗大颗粒和低放射性。

Description

一种球形粉体填料的制备方法、由此得到的球形粉体填料及其应用 技术领域
本发明涉及半导体的封装，更具体地涉及一种球形粉体填料的制备方法、由此得到的球形粉体填料及其应用。
背景技术
在半导体后端工序的封装工艺中，需要用到塑封料、贴片胶、底灌料和芯片载板等封装材料。此外，将被动元件、半导体元件、电声器件、显示器件、光学器件和射频器件等组装成设备时还须使用(高密度互连板(high density inerconnect，HDI)、高频高速板和母板等电路板。这些封装材料和电路板一般主要由环氧树脂等有机高分子和填料所构成，其中的填料主要是角形或球形二氧化硅，其主要功能是降低有机高分子的热膨胀系数。为了减低填料黏度并提高填充率，现有的填料选用球形二氧化硅进行紧密充填级配，该二氧化硅的化学结构是Si的Q单位，即SiO 4-。
一方面，随着技术的进步，半导体所用的信号频率越来越高，信号传输速度的高速化低损耗化要求填料具有低诱电率和低诱电损失。另一方面，材料的诱电率和诱电损失基本取决于材料的化学组成和结构，二氧化硅有其固有的诱电率和诱电损失的值，因此，现有的填料无法满足更低诱电率和低诱电损失的要求。
同样地，随着技术的进步，半导体所用的信号频率越来越高，信号传输速度的高速化低损耗化要求填料具有高纯度，其中无导电异物且无粗大颗粒。但是，球形二氧化硅一般由较易混入铁等导电异物的角形粉碎石英为原料的火焰熔融法和金属硅粉爆燃法等高温干法工艺制成，所以很难避免粗大颗粒和导电异物的混入。而且，粗大颗粒和导电异物一旦混入基本上不能干法除去。因此，现有的填料无法满足无导电异物且无粗大颗粒的要求。
而且，随着技术的进步，半导体所用的信号频率越来越高，信号传输速度的高速化低损耗化要求填料具有低放射性。但是，熔融球形低放射性二氧化硅是精选天然石英矿石，酸洗提纯制砂后粉碎熔融球形化制成，所以其纯 度很大程度依靠天然矿物本身的纯度。因此，现有的填料无法满足低放射性的要求。
发明内容
本发明旨在提供一种球形粉体填料的制备方法、由此得到的球形粉体填料及其应用，由此提供的填料具有低诱电率、低诱电损失、无导电异物、无粗大颗粒和低放射性。
本发明提供一种球形粉体填料的制备方法，包括步骤：S1，提供组成为0-10wt％的Q单位和90-100wt％的T单位的球形硅氧烷；S2，对该球形硅氧烷进行热处理，以使得球形硅氧烷中的硅羟基发生缩合以得到缩合硅氧烷；以及S3，加入处理剂对缩合硅氧烷进行表面处理，以消除缩合硅氧烷中的硅羟基以得到球形粉体填料，该处理剂的重量百分比添加量为0.5-50wt％，该处理剂包括生成D单位和/或M单位的处理剂；其中，Q单位＝SiO 4-；T单位＝R 1SiO 3-、R 2SiO 3-、R 3SiO 3-、R 4SiO 3-和/或R 5SiO 3-；D单位＝R a1R b1SiO 2-、R a2R b2Si 2O-和/或R a3R b3SiO 2-；M单位＝R c1R d1R e1SiO-和/或R c2R d2R e2SiO-；其中的R 1，R 2，R 3，R 4，R 5选自由以下有机基组成的组中的至少一种：甲基，丙基，乙烯基，己基，苯基，长链烷基，环氧基，脂肪族氨基，芳香族氨基，甲基丙烯酰氧丙基，丙烯酰氧丙基，脲基丙基，氯丙基，巯基丙基，聚硫化物基，和异氰酸酯丙基；其中的R a1，R b1，R a2，R b2，R a3，R b3，R c1，R d1，R e1，R c2，R d2，R e2选自由以下有机基组成的组中的至少一种：甲氧基，乙氧基，丙氧基，异丙氧基，氯基，硅氮烷。T单位中的R 1，R 2，R 3，R 4，R 5表示相同或不同的有机基，D单位中的R a1，R b1，R a2，R b2，R a3，R b3表示相同或不同的有机基，M单位中的R c1，R d1，R e1，R c2，R d2，R e2表示相同或不同的有机基。
与现有的Q单位的二氧化硅填料不同，本发明的球形粉体填料的二氧化硅为T单位，通过引入有机基R 1，R 2，R 3，R 4，R 5大大降低诱电率和诱电损失。另外，由于T单位只有三个SiOSi架桥点，热膨胀系数比Q单位的二氧化硅高，因此可根据需要导入适量Q单位来调整诱电率、诱电损失和热膨胀系数的平衡。热处理得到的缩合硅氧烷虽然通过加热具有较高的缩合度，但是由于空间几何限制会产生新的孤立的表面Si-OH和内部Si-OH，因此随后加入起架桥作用的生成D单位的处理剂以使得缩合硅氧烷中的Si-OH缩合， 和/或加入生成M单位的处理剂以使得缩合硅氧烷中的Si-OH封顶，从而进一步降低诱电率和诱电损失。
在所述步骤S1中，以甲基三甲氧基硅烷和/或苯基三甲氧基硅烷，四乙氧基硅烷为原料来提供球形硅氧烷。优选地，步骤S1中的球形硅氧烷的组成为96-99.9wt％的T单位和0.1-4wt％的Q单位。
在所述步骤S2中，热处理通过电热加热或微波加热来实现，其使得球形硅氧烷中的Si-OH发生缩合以产生SiOSi结构，该缩合反应的方程式如下：
Figure PCTCN2018097327-appb-000001
优选地，步骤S2中的热处理温度为180-650度。更优选地，该温度为250-550度。最优选地，该温度为280-380度。应该理解，温度过低将导致Si-OH的缩合反应不完全，而温度过高将导致有机基的分解。例如，因为苯基的分解温度较高，因此当有机基为苯基时，相应的热处理温度高于有机基是烷基的情况。在优选的实施例中，该热处理时间为30分钟以上，24小时以下。应该理解，温度越高时所需时间越短，温度越低时所需时间越长。
在所述步骤S3中，生成D单位的处理剂使得缩合硅氧烷中的Si-OH发生进一步缩合以产生SiOSi结构，该缩合反应的方程式如下：
Figure PCTCN2018097327-appb-000002
优选地，生成D单位的处理剂选自由以下处理剂组成的组中的至少一种：(CH 3) 2Si(OCH 3) 2，(CH 3) 2Si(OCH 2CH 3) 2，(CH 3)HSi(OCH 3) 2，(CH 3)HSi(OCH 2CH 3) 2，H 2Si(OCH 3) 2，H 2Si(OCH 2CH 3) 2，(C 6H 5) 2Si(OCH 3) 2，(C 6H 5) 2Si(OCH 2CH 3) 2，C 6H 5CH 3Si(OCH 3) 2，C 6H 5CH 3Si(OCH 2CH 3) 2，C 6H 5HSi(OCH 3) 2，C 6H 5HSi(OCH 2CH 3) 2。
在所述步骤S3中，生成M单位的处理剂使得缩合硅氧烷中的Si-OH发生进一步缩合以产生SiOSi结构，该缩合反应的方程式如下：
Figure PCTCN2018097327-appb-000003
优选地，生成M单位的处理剂选自由以下处理剂组成的组中的至少一种：(CH 3) 3SiNHSi(CH 3) 3，(CH 3) 2C 6H 5SiNHSi(CH 3) 2C 6H 5，CH 3(C 6H 5) 2SiNHSiCH 3(C 6H 5)。
在所述步骤S3中，该处理剂还包括硅烷偶联剂，以进一步消除缩合硅氧烷中的Si-OH。优选地，该硅烷偶联剂选自由以下偶联剂组成的组中的至少一种：环氧基硅烷偶联剂，脂肪族氨基硅烷偶联剂，芳香族氨基硅烷偶联剂，甲基丙烯酰氧丙基硅烷偶联剂，丙烯酰氧丙基硅烷偶联剂，脲基丙基硅烷偶联剂，氯丙基硅烷偶联剂，巯基丙基硅烷偶联剂，聚硫化物基硅烷偶联剂，异氰酸酯丙基硅烷偶联剂等。应该理解，该硅烷偶联剂可以在生成D单位和/或M单位的处理剂处理后进行处理，也可以和生成D单位和/或M单位的处理剂同时使用。
在所述步骤S3中，该处理剂的重量百分比添加量为1-50wt％。在优选的实施例中，该处理剂为单独组分处理剂，例如六甲基二硅氮烷，二甲基二甲氧基硅烷，或二甲基二氯硅烷。在优选的实施例中，该处理剂为混合处理剂，例如二甲基二甲氧基硅烷(如70重量％)和六甲基二硅氮烷(如30重量％)，乙烯基二甲氧基硅烷(如50重量％)和六甲基二硅氮烷(如50重量％)，或3-(2,3-环氧丙氧丙基)三甲氧基硅烷(如30重量％)和六甲基二硅氮烷(如70重量％)。
优选地，该制备方法包括使用干法或湿法的筛分或惯性分级来除去球形粉体填料中的75微米以上的粗大颗粒。优选地，除去球形粉体填料中的55微米以上的粗大颗粒。优选地，除去球形粉体填料中的45微米以上的粗大颗粒。优选地，除去球形粉体填料中的20微米以上的粗大颗粒。优选地，除去球形粉体填料中的10微米以上的粗大颗粒。优选地，除去球形粉体填料中的 5微米以上的粗大颗粒。优选地，除去球形粉体填料中的3微米以上的粗大颗粒。优选地，除去球形粉体填料中的1微米以上的粗大颗粒。
本发明还提供一种根据上述的制备方法得到的球形粉体填料，该球形粉体填料的粒径为0.1-50微米。优选地，该粒径为0.5-30微米。
测定结果表明，500MHz时的本发明的球形粉体填料的诱电率只有2.5-2.8，小于3，而现有的Q单位的二氧化硅填料的诱电率大约为3.8-4.5。因此，本发明的球形粉体填料具有大大降低的诱电率，能够满足5G时代的信号高频的材料要求。
测定结果表明，500MHz时的本发明的球形粉体填料的诱电损失只有0.0005-0.002，小于0.005，而现有的Q单位的二氧化硅填料的诱电损失大约为0.003-0.01。因此，本发明的球形粉体填料具有大大降低的诱电损失，能够满足5G时代的信号高频的材料要求。
测定结果表明，本发明的球形粉体填料的热膨胀系数为5-15ppm，而现有的熔融二氧化硅的热膨胀系数约为0.5ppm，结晶二氧化硅(石英)为8至13ppm。因此，本发明的球形粉体填料的热膨胀系数与一般无机填料的热膨胀系数相当，能够满足5G时代的信号高频的材料要求。
本发明又提供一种根据上述的球形粉体填料的应用，其中，不同粒径的球形粉体填料紧密填充级配在树脂中形成复合材料。优选地，该复合材料适用于半导体封装材料、电路板及其中间半成品。优选地，该封装材料为塑封料、贴片胶、底灌料、或芯片载板。该塑封料为DIP封装形式的塑封料、SMT封装形式的塑封料、MUF，FO-WLP，FCBGA的塑封料。优选地，该电路板为HDI、高频高速板、或母板。
已知地，复合材料的热膨胀系数可由下式1近似计算：
式1：α＝V 1×α 1+V 2×α 2
α：复合材料的热膨胀系数；V 1：树脂的体积分数；α 1：树脂的热膨胀系数；V 2：填料的体积分数；α 2：填料的热膨胀系数。
树脂的热膨胀系数α 1为60至120ppm，本发明的球形粉体填料的热膨胀系数α 2在5至15ppm远低于树脂的热膨胀系数，其可以像现有的无机填料那样降低固化后树脂组成物的热膨胀系数达到和导线金属或晶片等的热膨胀匹配。由此，通过调节树脂和球形粉体填料的体积分数，可以根据需要设计复合材料所需的热膨胀系数以形成封装材料、电路板及其中间半成品。
已知地，复合材料的诱电率可由下式2近似计算：
式2：logε＝V 1×logε 1+V 2×logε 2
ε：复合材料的诱电率；V 1：树脂的体积分数；ε 1：树脂的诱电率；V 2：填料的体积分数；ε 2：填料的诱电率。
由此，通过调节树脂和球形粉体填料的体积分数，可以根据需要设计复合材料所需的诱电率以形成封装材料、电路板及其中间半成品。
另外，复合材料的诱电损失由树脂和填料的诱电损失，以及填料表面极性基团的多少来决定。根据本发明的球形粉体填料具有低诱电率，填料表面具有的极性基团越少，因此，复合材料具有低诱电损失。
总之，根据本发明的球形粉体填料的制备方法得到的填料具有低诱电率、低诱电损失。而且由于制备方法的原材料都是有机物，不涉及常规使用的角形粉碎石英等，而且可以通过蒸馏等工业方法精制，由此形成的球形粉体填料中不含铀和钍等放射性元素，因此满足无导电异物、无粗大颗粒、低放射性的要求。另外，本发明的制备方法可适当调整合成参数来制造粒径为0.1至50微米的球形粉体填料。
具体实施方式
下面给出本发明的较佳实施例，并予以详细描述。
以下实施例中涉及的检测方法包括：
平均粒径用HORIBA的激光粒度分布仪LA-700测定。溶剂是异丙醇；
比表面积用SHIMADZU的FlowSorbIII2305测定；
真比重用MicrotracBEL的BELPycno测定；
铀，釷含量用Agilent的7700X型ICP-MS测定。制样方法是800度烧灼后用氢氟酸全溶制样；
Q单位和T单位的含量是从固体 28Si-NMR核磁共振光谱图上-80至-120ppm范围的锋积分面积和-30至-80ppm范围的锋积分面积算出。使用核磁共振仪是JEOL的ECS-400；
诱电率和诱电损失用KEYCOM的摄动方式试料穴封锁形空洞共振法诱电率诱电损失测定装置Model No.DPS18测定。
例1
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利 P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成不同组成的球形硅氧烷。
球形硅氧烷经电炉350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为六甲基二硅氮烷，处理后150度3小时干燥得到实施例样品。
六甲基二硅氮烷处理量(％)(即重量百分比添加量)＝(六甲基二硅氮烷的重量/(六甲基二硅氮烷的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表1：
表1
Figure PCTCN2018097327-appb-000004
显然，根据实施例1-实施例5得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例2
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在不同温度下1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为六甲基二硅氮烷，处理后150度3小时干燥得到实施例样品。
六甲基二硅氮烷处理量(％)＝(六甲基二硅氮烷的重量/(六甲基二硅氮烷的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表2：
表2
Figure PCTCN2018097327-appb-000005
显然，根据实施例6-实施例8得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例3
以苯基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在不同温度下1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为六甲基二硅氮烷，处理后150度3小时干燥得到实施例样品。
六甲基二硅氮烷处理量(％)＝(六甲基二硅氮烷的重量/(六甲基二硅氮烷的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表3：
表3
Figure PCTCN2018097327-appb-000006
显然，根据实施例9-实施例11得到的实施例样品的诱电率均小于3，诱电损失均小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例4
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为二甲基二甲氧基硅烷，处理后150度3小时干燥得到实施例样品。
二甲基二甲氧基硅烷处理量(％)＝(二甲基二甲氧基硅烷的重量/(二甲基二甲氧基硅烷+球形硅氧烷的重量))×％。合成和测定结果列入了下表4：
表4
Figure PCTCN2018097327-appb-000007
显然，根据实施例12得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例5
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为二甲基二甲氧基硅烷(70重量％)和六甲基二硅氮烷(30重量％)，处理后150度3小时干燥得到实施例样品。
混合处理剂处理量＝(混合处理剂的重量/(混合处理剂的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表5：
表5
Figure PCTCN2018097327-appb-000008
显然，根据实施例13得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例6
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为乙烯基二甲氧基硅烷(50重量％)和六甲基二硅氮烷(50重量％)，处理后150度3小时干燥得到实施例样品。
混合处理剂处理量＝(混合处理剂的重量/(混合处理剂的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表6：
表6
Figure PCTCN2018097327-appb-000009
显然，根据实施例14得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例7
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为3-(2,3-环氧丙氧丙基)三甲氧基硅烷(30重量％)和六甲基二硅氮烷(70重量％)，处理后150度3小时干燥得到实施例样品。
混合处理剂处理量＝(混合处理剂的重量/(混合处理剂的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表7：
表7
Figure PCTCN2018097327-appb-000010
显然，根据实施例15得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例8
以甲基三甲氧基硅烷(50重量％)和苯基三甲氧基硅烷(50重量％)的混合物，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为六甲基二硅氮烷，处理后150度3小时干燥得到实施例样品。
六甲基二硅氮烷处理量＝(六甲基二硅氮烷的重量/(六甲基二硅氮烷的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表8：
表8
Figure PCTCN2018097327-appb-000011
显然，根据实施例16得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例9
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利 P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用干法进行表面处理，处理剂为二甲基二氯硅烷，处理后150度3小时干燥得到实施例样品。
二甲基二氯硅烷处理量＝(二甲基二氯硅烷的重量/(二甲基二氯硅烷的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表9：
表9
Figure PCTCN2018097327-appb-000012
显然，根据实施例17得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
例10
以甲基三甲氧基硅烷，四乙氧基硅烷为原料，参考日本专利P2001-192452A，P2002-322282A，特开平6-49209，特开平6-279589，P2000-345044A中的方法制成平均粒径为2微米的球形硅氧烷。
球形硅氧烷经电炉在350度1小时热处理。
热处理后的球形硅氧烷用湿法进行表面处理，处理剂为二甲基二甲氧基硅烷，溶剂为丁酮，处理后150度3小时干燥得到实施例样品。
二甲基二甲氧基硅烷处理量＝(二甲基二甲氧基硅烷的重量/(二甲基二甲氧基硅烷的重量+球形硅氧烷的重量))×％。合成和测定结果列入了下表10：
表10
Figure PCTCN2018097327-appb-000013
Figure PCTCN2018097327-appb-000014
显然，根据实施例18得到的实施例样品的诱电率小于3，诱电损失小于0.005，从而满足5G时代填料的低诱电率(信号迟延小)和低诱电损失(信号损失少)的要求。
应该理解，上述实施例1-实施例18所得到的实施例样品可以进行顶点切割步骤，以除去粗大颗粒。具体地，使用干法或湿法的筛分或惯性分级等方法来根据半导体芯片大小的需要，除去球形粉体填料中的75、55、45、20、10、5、3或1微米以上的粗大颗粒。
另外，上述实施例1-实施例18所得到的实施例样品用氢氟酸溶解试样ICP-MS检测发现铀和钍的含量都在0.5ppb以下。
以上所述的，仅为本发明的较佳实施例，并非用以限定本发明的范围，本发明的上述实施例还可以做出各种变化。即凡是依据本发明申请的权利要求书及说明书内容所作的简单、等效变化与修饰，皆落入本发明专利的权利要求保护范围。本发明未详尽描述的均为常规技术内容。

Claims (9)

  1. 一种球形粉体填料的制备方法，其特征在于，包括步骤：
    S1，提供组成为0-10wt％的Q单位和90-100wt％的T单位的球形硅氧烷；
    S2，对该球形硅氧烷进行热处理，以使得球形硅氧烷中的硅羟基发生缩合以得到缩合硅氧烷；以及
    S3，加入处理剂对缩合硅氧烷进行表面处理，以消除缩合硅氧烷中的硅羟基以得到球形粉体填料，该处理剂的重量百分比添加量为0.5-50wt％，该处理剂包括生成D单位和/或M单位的处理剂；
    其中，Q单位＝SiO 4-；T单位＝R 1SiO 3-、R 2SiO 3-、R 3SiO 3-、R 4SiO 3-和/或R 5SiO 3-；D单位＝R a1R b1SiO 2-、R a2R b2Si 2O-和/或R a3R b3SiO 2-；M单位＝R c1R d1R e1SiO-和/或R c2R d2R e2SiO-；其中的R 1，R 2，R 3，R 4，R 5选自由以下有机基组成的组中的至少一种：甲基，丙基，乙烯基，己基，苯基，长链烷基，环氧基，脂肪族氨基，芳香族氨基，甲基丙烯酰氧丙基，丙烯酰氧丙基，脲基丙基，氯丙基，巯基丙基，聚硫化物基，异氰酸酯丙基；其中的R a1，R b1，R a2，R b2，R a3，R b3，R c1，R d1，R e1，R c2，R d2，R e2选自由以下有机基组成的组中的至少一种：甲氧基，乙氧基，丙氧基，异丙氧基，氯基，硅氮烷。
  2. 根据权利要求1所述的制备方法，其特征在于，生成D单位的处理剂选自由以下处理剂组成的组中的至少一种：(CH 3) 2Si(OCH 3) 2，(CH 3) 2Si(OCH 2CH 3) 2，(CH 3)HSi(OCH 3) 2，(CH 3)HSi(OCH 2CH 3) 2，H 2Si(OCH 3) 2，H 2Si(OCH 2CH 3) 2，(C 6H 5) 2Si(OCH 3) 2，(C 6H 5) 2Si(OCH 2CH 3) 2，C 6H 5CH 3Si(OCH 3) 2，C 6H 5CH 3Si(OCH 2CH 3) 2，C 6H 5HSi(OCH 3) 2，C 6H 5HSi(OCH 2CH 3) 2。
  3. 根据权利要求1所述的制备方法，其特征在于，生成M单位的处理剂选自由以下处理剂组成的组中的至少一种：(CH 3) 3SiNHSi(CH 3) 3，(CH 3) 2C 6H 5SiNHSi(CH 3) 2C 6H 5，CH 3(C 6H 5) 2SiNHSiCH 3(C 6H 5)。
  4. 根据权利要求1所述的制备方法，其特征在于，处理剂还包括选自由以下偶联剂组成的组中的至少一种硅烷偶联剂：环氧基硅烷偶联剂，脂肪族氨基硅烷偶联剂，芳香族氨基硅烷偶联剂，甲基丙烯酰氧丙基硅烷偶联剂，丙烯酰氧丙基硅烷偶联剂，脲基丙基硅烷偶联剂，氯丙基硅烷偶联剂，巯基丙基硅烷偶联剂，聚硫化物基硅烷偶联剂，异氰酸酯丙基硅烷偶联剂。
  5. 根据权利要求1所述的制备方法，其特征在于，该制备方法包括使用 干法或湿法的筛分或惯性分级来除去球形粉体填料中的75微米以上的粗大颗粒。
  6. 根据权利要求1-5中任一项所述的制备方法得到的球形粉体填料，其特征在于，该球形粉体填料的粒径为0.1-50微米。
  7. 根据权利要求6所述的球形粉体填料，其特征在于，该球形粉体填料的诱电率为2.5-2.8，该球形粉体填料的诱电损失为0.0005-0.002，该球形粉体填料的热膨胀系数为5-15ppm。
  8. 根据权利要求6所述的球形粉体填料的应用，其特征在于，不同粒径的球形粉体填料紧密填充级配在树脂中形成复合材料。
  9. 根据权利要求8所述的应用，其特征在于，该复合材料适用于半导体封装材料、电路板及其中间半成品。
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