Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
  • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
  • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/04—Coating on selected surface areas, e.g. using masks
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/40—Oxides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45536—Use of plasma, radiation or electromagnetic fields
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/56—After-treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/68—Organic materials, e.g. photoresists
  • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
  • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
  • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
  • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
  • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
  • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
  • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
  • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
  • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
  • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
  • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
  • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
  • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
  • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
  • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
  • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
  • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
  • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
  • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W95/00—Packaging processes not covered by the other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
  • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
  • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Definitions

• the present invention relates to substrate processing, and more particularly, to a substrate processing tool configured for performing integrated substrate processing and substrate metrology, and a method of using.
• Embodiments of the invention describe a substrate processing tool configured for performing integrated substrate processing and substrate metrology, and methods of processing a substrate.
• a substrate processing tool includes a substrate transfer chamber, a plurality of substrate processing chambers coupled to the substrate transfer chamber, and a substrate metrology module coupled to the substrate transfer chamber.
• a substrate processing method includes processing a substrate in a first substrate processing chamber of a substrate processing tool, transferring the substrate from the first substrate processing chamber through a substrate transfer chamber to a substrate metrology module in the substrate processing tool, performing metrology on the substrate in the substrate metrology module, transferring the substrate from the substrate metrology module to a second substrate processing chamber through the substrate transfer chamber, and processing the substrate in the second substrate processing chamber.
• FIG. 1 is a schematic diagram of a substrate processing tool configured for performing integrated substrate processing and substrate metrology according to an embodiment of the invention
• FIGS. 2 A - 2E show through schematic cross-sectional views a method of area selective film formation according to an embodiment of the invention
• FIG. 3 is a process flow diagram for performing integrated substrate processing and substrate metrology according to an embodiment of the invention.
• FIG. 4 is a process flow diagram for performing integrated substrate processing and substrate metrology according to another embodiment of the invention.
• Embodiments of the invention describe a substrate processing tool configured for performing integrated substrate processing and substrate metrology, and methods of processing a substrate.
• Embodiments of the invention address integrated substrate processing and the need for performing substrate metrology during the integrated substrate processing.
• substrate metrology may be performed in the processing tool following a film deposition step to measure and characterize loss of deposition selectivity and, based on substrate metrology data, perform removal of undesired film nuclei to achieve selective film formation.
• the results from the substrate metrology step may be used to tune the film nuclei removal step based on variation in the film deposition step.
• artificial intelligence AI may be used to analyze the substrate metrology results and predict future film thickness and film deposition selectivity.
• FIG. 1 is a schematic diagram of a substrate processing tool configured for performing integrated substrate processing and substrate metrology according to
• the substrate processing tool 100 contains a substrate (wafer) transfer system 101 that includes cassette modules 101 A, 101 B, and 101C, and a substrate alignment module 10 ID.
• Load-lock chambers 102A and 102B, and substrate metrology module 102C, are coupled to the substrate transfer system 101.
• the substrate transfer system 101 is maintained at atmospheric pressure but a clean environment is provided by purging with an inert gas.
• the load lock chambers 102A and 102B are coupled to a substrate transfer chamber 103 and may be used for transferring substrates from the substrate transfer system 101 to the substrate transfer chamber 103.
• the substrate transfer chamber 103 may be maintained at a very low base pressure (e.g., 5 x 10 8 Torr, or lower) or constantly purged with an inert gas.
• the substrate metrology module 102C may be operated under atmospheric pressure or operated under vacuum conditions and can include one or more analytical tools that are capable of measuring one or more material and electronic properties of a substrate and/or thin films and layers deposited on a substrate. Some or all components of the one or more analytical tools may located in the vacuum environment in the substrate metrology module 102C.
• a light source may be positioned outside the substrate metrology module 102C and light from the light source may be transmitted into the substrate metrology module 102C and onto a substrate through a window.
• the light source may be positioned inside the substrate metrology module 102C
• Exemplary analytical tools can include X-ray photoelectron spectroscopy (XPS) for measuring elemental composition, empirical formula, chemical state and electronic state of materials; X-ray reflectometry (XRR) for characterizing surfaces, thin films and multilayers; X-ray fluorescence (XRF) for elemental analysis and chemical analysis of materials; Fourier- transform infrared spectroscopy (FTIR) for characterizing materials; ultraviolet/visible (UV/Vis) spectroscopy for measuring thickness and optical properties of thin films; optical scatterometry for characterizing surfaces, thin films and multilayers; ellipsometry for characterizing composition, roughness, thickness (depth), crystalline nature, doping concentration, electrical conductivity and other material properties of thin films; and analytical tools for measuring substrate bow and warp.
• XPS X-ray photoelectron spectroscopy
• XRR X-ray reflectometry
• XRF X-ray fluorescence
• FTIR Fourier- transform infrared spectroscopy
• substrate processing chambers 106A - 106D Coupled to the substrate transfer chamber 103 are substrate processing chambers 106A - 106D that are configured for processing substrates, such as Si wafers.
• the Si wafers can, for example, have a diameter of 150mm, 200mm, 300mm, 450mm, or larger than 450mm.
• the first substrate processing chamber 106 A can perform a treatment process on a substrate
• the second substrate processing chamber 106B can form a self-aligned monolayer (SAM) on a substrate.
• SAM self-aligned monolayer
• the third substrate processing chamber 106C can etch or clean a substrate, and the fourth substrate processing chamber 106D can deposit a film on a substrate by vapor deposition such as atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), chemical vapor deposition (CVD), or plasma-enhanced CVD (PECVD).
• the substrate transfer chamber 103 is configured for transferring substrates between any of the substrate processing chambers 106A-106D, and into the substrate metrology module 102C
• FIG. 1 further shows gate valves G1-G9 that provide isolation between adjacent processing tool components. As depicted in the embodiment of FIG. 1, the substrate processing chambers 106A-106D and the substrate metrology module 102C may be directly coupled to the substrate transfer chamber 103 by the gate valves G5, G7, G8, G9, and G10. This direct coupling can greatly improve substrate throughput.
• the substrate processing tool 100 includes a controller 110 that can be coupled to and control any or all of the tool components depicted in FIG. 1 during the integrated substrate processing and substrate metrology.
• the controller 110 can be coupled to one or more additional controllers/computers (not shown), and the controller 1 10 can obtain setup and/or configuration information from an additional controller/computer.
• the controller 110 can be used to configure any or all of the substrate processing chambers and processing elements, and the controller 110 can collect, provide, process, store, and display data from any or all of the tool components.
• the controller 1 10 can comprise a number of applications for controlling any or ail of the tool components.
• controller 110 can include a graphic user interface (GUI) component that can provide easy to use interfaces that enable a user to monitor and/or control one or more tool components.
• GUI graphic user interface
• the controller 110 can include a microprocessor, memory, and a digital I/O port capable of generating control voltages sufficient to communicate, activate inputs, and exchange information with the substrate processing tool 100 as well as monitor outputs from the substrate processing tool 100.
• a program stored in the memory may be utilized to activate the inputs of the substrate processing tool 100 according to a process recipe in order to perform integrated substrate processing.
• the controller 110 may be implemented as a general purpose computer system that performs a portion or all of the microprocessor based processing steps of the invention in response to a processor executing one or more sequences of one or more instructions contained in a memory. Such instructions may be read into the controller memory from another computer readable medium, such as a hard disk or a removable media drive.
• One or more processors in a multi-processing arrangement may also be employed as the controller microprocessor to execute the sequences of instructions contained in main memory ' .
• hard-wired circuitry may be used in place of or in combination with software instructions. Thus, embodiments are not limited to any specific combination of hardware circuitry and software.
• the controller 110 may be locally located relative to the substrate processing tool 100, or it may be remotely located relative to the substrate processing tool 100.
• the controller 110 may exchange data with the substrate processing tool 100 using at least one of a direct connection, an intranet, the Internet and a wireless connection.
• the controller 110 may be coupled to an intranet at, for example, a customer site (i.e., a device maker, etc.), or it may be coupled to an intranet at, for example, a vendor site (i.e., an equipment
• controller 110 may be coupled to the Internet.
• another computer i.e., controller, server, etc.
• controller, server, etc. may access, for example, the controller 110 to exchange data via at least one of a direct connection, an intranet, and the Internet.
• the controller 110 may exchange data with the substrate processing tool 100 via a wireless connection.
• the substrate processing tool 100 may be configured to perform and monitor a method of area selective deposition on a substrate.
• the substrate 200 contains a base layer 202, an exposed surface of a first material layer 204 and an exposed surface of a second material layer 206.
• the substrate 200 includes a dielectric layer 204 and a metal layer 206.
• the metal layer 206 can contain Cu, Al, Ta, Ti, W, Ru, Co, Ni, or Mo.
• the dielectric layer 204 can, for example, contain S1O2, a low-k dielectric material, or a high-k dielectric material.
• Low-k dielectric materials have a nominal dielectric constant less than the dielectric constant of S1O2, which is approximately 4 (e.g , the dielectric constant for thermally grown silicon dioxide can range from 3.8 to 3.9).
• High-k materials have a nominal dielectric constant greater than the dielectric constant of S1O2.
• Lorv-k dielectric materials may have a dielectric constant of less than 3.7, or a dielectric constant ranging from 1.6 to 3.7.
• Low-k dielectric materials can include fluorinated silicon glass (FSG), carbon doped oxide, a polymer, a SiCOH-containing low-k material, a non-porous low-k material, a porous low-k material, a spin-on dielectric (SOD) low-k material, or any other suitable dielectric material.
• the low-k dielectric material can include BLACK DIAMOND® (BD) or BLACK DIAMOND® II (BDII) SiCOH material, commercially available from Applied Materials, Inc., or Coral ®' CVD films commercially available from Novellus Systems, Inc.
• carbon-containing materials include SILK® (e.g., SiLK-i, SiLK-J, SiLK-H, SiLK-D, and porous SiLK semiconductor dielectric resins) and CYCLOTENE® (benzocyclobutene) available from Dow Chemical, and GX-3 1M , and GX-SP 11® semiconductor dielectric resins available from Honeywell.
• SILK® e.g., SiLK-i, SiLK-J, SiLK-H, SiLK-D, and porous SiLK semiconductor dielectric resins
• CYCLOTENE® benzocyclobutene
• Low-k dielectric materials include porous inorganic-organic hybrid films comprised of a single-phase, such as a silicon oxide-based matrix having CH3 bonds that hinder full densification of the film during a curing or depositi on process to create small voids (or pores). Still alternatively, these dielectric layers may include porous inorganic-organic hybrid films comprised of at least two phases, such as a carbon-doped silicon oxide-based matrix having pores of organic material (e.g , porogen) that is decomposed and evaporated during a curing process.
• organic material e.g , porogen
• low ⁇ k materials include a silicate-based material, such as hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ), deposited using SOD techniques.
• silicate-based material such as hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ)
• SOD techniques such as hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ)
• examples of such films include FOx: ® HSQ commercially available from Dow Corning, XLK porous HSQ commercially available from Dow Corning, and JSR LKD-5109 commercially available from JSR Microelectronics.
• the method further includes, in step 302 of the process flow 300, providing the substrate 200 into the substrate transfer system 101, and thereafter, transferring the substrate 200 into the substrate transfer chamber 103 [0027] Thereafter, in step 304, the substrate 200 is optionally transferred into the substrate metrology module 102C where the substrate 200 is measured and characterized.
• the substrate 200 is optionally transferred into the first substrate processing chamber 106A for treating with a treatment gas.
• the treatment gas can include an oxidizing gas or a reducing gas.
• the oxidizing gas can include Ch, H2O, H2O2, isopropyl alcohol, or a combination thereof
• the reducing gas can include Fb gas.
• the oxidizing gas may be used to oxidize a surface of the first materi al layer 204 or the second material 206 to improve subsequent area selective deposition.
• the treatment gas can contain or consist of plasma-excited Ar gas.
• step 308 the substrate 200 is optionally transferred into the substrate metrology module 102C where the treating of the substrate 200 in step 306 is measured and
• the substrate is transferred into the second substrate processing chamber 106B where a self-aligned monolayer (SAM) is formed on the substrate 200 in step 310.
• SAM may be formed on the substrate 200 by exposure to a reactant gas that contains a molecule that is capable of forming a SAM on the substrate 200.
• the SAM is a molecular assembly that is formed spontaneously on substrate surfaces by adsorption and organized into more or less large ordered domains.
• the SAM can include a molecule that possesses a head group, a tail group, and a functional end group, and the SAM is created by the chemisorption of head groups onto the substrate 200 from the vapor phase at room temperature or above room temperature, followed by a slow organization of the tail groups.
• adsorbate molecules form either a disordered mass of molecules or form an ordered two-dimensional "lying down phase", and at higher molecular coverage, over a period of minutes to hours, begin to form three-dimensional crystalline or semicrystalline structures on the substrate surface.
• the head groups assemble together on the substrate, while the tail groups assemble far from the substrate.
• the head group of the molecule forming the SAM can include a thiol, a silane, or a phosphonate.
• silanes include molecule that include C, H, Cl, F, and Si atoms, or C, H, Cl, and Si atoms.
• the molecul e include perfluorodecyltrichJorosilane (CFXCFrijTCItbCFhSiCh), perfluorodecanethiol (CF3(CF 2 )7CH 2 CH2SH), chlorodecyldimethylsilane (Cl MCI MA ' I fiStiC! 1 F.P ).
• the presence of the SAM on a substrate 200 to may be used to enable subsequent selective film deposition on the first material layer 204 (e.g., a dielectric layer) relative to the second material layer 206 (e.g., a metal layer).
• This selective deposition behavior is unexpected and provides a new method for selectively depositing a film on the first material layer 204 while preventing or reducing metal oxide deposition on the second material layer 206.
• SAM density is greater on the second material layer 206 relative to on the first materi al layer 204, possibly due to higher initial ordering of the molecules on the second material layer 206 relative to on the first material layer 204.
• This greater SAM density on the second material layer 206 is schematically shown as SAM 208 in FIG. 2B.
• the substrate 200 is optionally transferred into the substrate metrology module 102C where the formation of the SAM 208 on the substrate 200 is measured and characterized.
• a film 210 (e.g , a metal oxide film) is selectively- deposited on the first material layer 204 relative to on the second material layer 206 containing the SAM 208 by exposing the substrate 200 to one or more deposition gases.
• the film 210 may include a metal oxide film that contains HfCfe, ZrO?., or AI2Q3.
• the film 210 may, for example, be deposited by CVD, plasma-enhanced CVD PEALD),
• the film 210 may be deposited by ALD using alternating exposures of a metal-containing precursor and an oxidizer (e.g., H2O, H2O2, plasma-excited O2, or O3).
• a metal-containing precursor e.g., H2O, H2O2, plasma-excited O2, or O3
• an oxidizer e.g., H2O, H2O2, plasma-excited O2, or O3
• the exposure to the one or more deposition gases in the third substrate processing chamber 106C may, in addition to depositing the film 210 on the first material layer 204, deposit film nuclei 210’ on the SAM 208.
• This loss of deposition selectivity can occur if the deposition process is carried out for too long or if the deposition selectivity between the first material layer 204 and the SAM 208 is poor. Poor deposition selectivity can also occur if surface coverage of the SAM 208 is incomplete and contains voids on the second material layer 206.
• the substrate 200 is transferred into the substrate metrology module 102C where the deposition of the film 210 is measured and characterized. The characterization can determine the degree of deposition selectivity and the removal needed of the film nuclei 210’ from the SAM 208.
• the film nuclei 210’ on the SAM 208 may be removed using an etching process in order to selectively form the film 210 on the first material layer 204.
• the substrate 200 is transferred into the third substrate processing chamber 106C to perform the etching process in step 318.
• the metal oxide nuclei 210’ are expected to etch faster than the film 210.
• the etching process can include a dry etching process, a wet etching process, or a combination thereof.
• the etching process may include an atomic layer etching (ALE) process.
• ALE atomic layer etching
• the substrate 200 is optionally transferred into the substrate metrology module 102C where the substrate 200 is measured and characterized.
• the characterization can determine the extent of the etching process.
• the SAM 208 may be removed from the substrate 200, for example by etching or cleaning in the third substrate processing chamber 106C or by a heat- treatment in the first substrate processing chamber 106A.
• the above-described substrate processing steps 304 - 322 may be repeated one or more times to increase the thickness of the film 210 on the substrate 200. Removal and subsequent repeated deposition of the S AM 208 on the substrate 200 may be desired if the SAM 208 becomes damaged during the film deposition and/or the etching process and therefore affects the film deposition selectivity.
• FIG. 4 is a process flow diagram for performing integrated substrate processing and substrate metrology according to an embodiment of the invention.
• the process flow diagram 400 in FIG. 4 is similar to the process flow 7 diagram 300 in FIG. 3 and includes, in step 402, providing a substrate 200 in a substrate processing tool 100, where the substrate 200 contains an exposed surface of a first material layer 204 and an exposed surface of a second material layer 206.
• the first material layer 204 includes a dielectric layer and the second material layer 206 includes a metal layer.
• the method further includes, in step 404, optionally performing substrate metrology, in step 406, optionally treating the substrate 200 with a treatment gas, and in step 408, optionally performing substrate metrology.
• the method further includes, in step 410, forming a SAM 208 on the substrate 200, and in step 412, optionally performing substrate metrology.
• the method further includes, in step 414, depositing a film 210 on the first material layer 204 and film nuclei 210’ on the SAM 208, and in step 416, performing substrate metrology.
• the method further includes, in step 418, removing film nuclei 210’ from the SAM 208, and in step 420, optionally performing substrate metrology.
• The further includes, in 422, optionally treating the substrate 200 with a treatment gas. As schematically shown by process arrow 424, the above-described substrate processing steps 412 - 422, may be repeated one or more times to increase the thickness of the film 210 on the substrate 200.
• a substrate processing tool configured for performing integrated substrate processing and substrate metrology, and a method of area selective deposition have been disclosed in various embodiments.
• the foregoing description of the embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. This description and the claims following include terms that are used for descriptive purposes only and are not to be construed as limiting. Persons skilled in the relevant art can appreciate that many

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Inorganic Chemistry (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Electromagnetism (AREA)
• Chemical Vapour Deposition (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Automation & Control Theory (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (1)

Family

ID=67984323

Family Applications (1)

Country Status (6)

Cited By (3)

Families Citing this family (7)

Citations (5)

Family Cites Families (25)

• 2019
  • 2019-03-15 WO PCT/US2019/022617 patent/WO2019182916A1/en not_active Ceased
  • 2019-03-15 KR KR1020207029987A patent/KR102655137B1/ko active Active
  • 2019-03-15 US US16/355,579 patent/US11264254B2/en active Active
  • 2019-03-15 JP JP2020550762A patent/JP7295359B2/ja active Active
  • 2019-03-15 CN CN201980029771.4A patent/CN112074939A/zh active Pending
  • 2019-03-19 TW TW108109231A patent/TWI848942B/zh active
• 2022
  • 2022-02-28 US US17/682,202 patent/US11769677B2/en active Active

Patent Citations (5)

Also Published As

Similar Documents

Legal Events