TWI848942B - 利用整合式量測的基板處理方法 - Google Patents

利用整合式量測的基板處理方法 Download PDF

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TWI848942B
TWI848942B TW108109231A TW108109231A TWI848942B TW I848942 B TWI848942 B TW I848942B TW 108109231 A TW108109231 A TW 108109231A TW 108109231 A TW108109231 A TW 108109231A TW I848942 B TWI848942 B TW I848942B
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substrate
substrate processing
chamber
material layer
processing method
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TW108109231A
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Chinese (zh)
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TW201941346A (zh
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羅伯特 克拉克
坎達巴拉 泰伯利
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日商東京威力科創股份有限公司
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    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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