WO2019099255A2 - Condenser system for high pressure processing system - Google Patents
Condenser system for high pressure processing system Download PDFInfo
- Publication number
- WO2019099255A2 WO2019099255A2 PCT/US2018/059676 US2018059676W WO2019099255A2 WO 2019099255 A2 WO2019099255 A2 WO 2019099255A2 US 2018059676 W US2018059676 W US 2018059676W WO 2019099255 A2 WO2019099255 A2 WO 2019099255A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- process chamber
- conduit
- condenser
- fluid
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/80—Cleaning only by supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/008—Processes carried out under supercritical conditions
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F22—STEAM GENERATION
- F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
- F22B29/00—Steam boilers of forced-flow type
- F22B29/06—Steam boilers of forced-flow type of once-through type, i.e. built-up from tubes receiving water at one end and delivering superheated steam at the other end of the tubes
- F22B29/08—Steam boilers of forced-flow type of once-through type, i.e. built-up from tubes receiving water at one end and delivering superheated steam at the other end of the tubes operating with fixed point of final state of complete evaporation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16T—STEAM TRAPS OR LIKE APPARATUS FOR DRAINING-OFF LIQUIDS FROM ENCLOSURES PREDOMINANTLY CONTAINING GASES OR VAPOURS
- F16T1/00—Steam traps or like apparatus for draining-off liquids from enclosures predominantly containing gases or vapours, e.g. gas lines, steam lines, containers
- F16T1/38—Component parts; Accessories
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00054—Controlling or regulating the heat exchange system
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00162—Controlling or regulating processes controlling the pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
- B01J2219/00277—Apparatus
- B01J2219/00495—Means for heating or cooling the reaction vessels
Definitions
- Embodiments of the present disclosure generally relate to a substrate processing apparatus. More specifically, embodiments described herein relate to a condenser system for a high pressure processing system.
- a substrate process system in one embodiment, includes a process chamber, a boiler in fluid communication with the process chamber via a first conduit, and a first valve disposed on the first conduit between the boiler and the process chamber.
- a condenser is in fluid communication with the process chamber via a second conduit and a second valve is disposed on the second conduit between the condenser and the process chamber.
- a heat exchanger is in fluid communication with the condenser via a third conduit and a third valve is disposed on the third conduit between the condenser and the heat exchanger.
- a substrate processing system in another embodiment, includes a process chamber, a boiler in fluid communication with the process chamber via a first conduit, and a first valve disposed on the first conduit between the boiler and the process chamber.
- a condenser is in fluid communication with the process chamber and a second valve is disposed on the second conduit between the condenser and the process chamber.
- a first heat exchanger is disposed on the second conduit between the process chamber and the condenser and a fluid collection unit is in fluid communication with the condenser via a third conduit.
- a second heat exchanger is disposed on the third conduit between the condenser and the fluid collection unit and a third valve is disposed on the third conduit between the condenser and the second heat exchanger.
- a substrate process method includes heating conduits extending from a process chamber and heating a boiler in fluid communication with the process chamber. Valves disposed on conduits located upstream from the process chamber are closed and valves disposed on conduits located downstream from the process chamber are opened. A substrate is positioned in the process chamber, the process chamber is heated, the valves disposed on conduits located downstream from the process chamber are closed, and the valves disposed on conduits located upstream from the process chamber are opened to enable a fluid generated by the boiler to pressurize the process chamber. The valves disposed on conduits locate downstream from the process chamber are opened and the fluid from the process chamber is flowed to a condenser. BRIEF DESCRIPTION OF THE DRAWINGS
- Figure 1 is a schematic illustration of a high pressure processing system with a condenser according to an embodiment described herein.
- Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same.
- the processing system includes a process chamber, a boiler, a condenser, and one or more heat exchangers.
- the boiler generates a fluid, such as a vapor or supercritical fluid, and delivers the fluid to the process chamber where a substrate is processed. After processing the substrate, the system is depressurized and the fluid is delivered to the condenser where the fluid is condensed.
- FIG. 1 is a schematic illustration of a high pressure processing system 100 with a condenser 150 according to an embodiment described herein.
- the system 100 includes a process chamber 132, a boiler 130, one or more heat exchangers 140, 152, 162, and the condenser 150.
- the boiler 130 is disposed in an upstream region 170 from the process chamber 132 and the heat exchangers 140, 152, 162 and condenser 150 are disposed in a downstream region 180 from the process chamber 132.
- the system 100 also includes a plurality of fluid sources 102, 104, 106.
- the fluid source 102 is a process liquid source, for example, a water source
- the fluid source 104 is a process gas source, for example, a C0 2 gas source or a NH 3 gas source
- the fluid source 106 is a purge gas source, for example, an inert gas source, such as an argon gas or nitrogen gas source.
- the fluid source 102 is in fluid communication with the boiler 130 via a conduit 108.
- a valve 1 10 is disposed on the conduit 108 between the fluid source 102 and the boiler 130 to control fluid flow between the fluid source 102 and the boiler 130.
- the fluid source 104 is in fluid communication with the boiler 130 via a conduit 1 12.
- a valve 1 16 is disposed on the conduit 1 12 between the fluid source 104 and the boiler 130 to control fluid flow between the fluid source 104 and the boiler 130.
- a check valve 1 14, such as a unidirectional flow valve, is also disposed on the conduit 1 12 between the valve 1 16 and the fluid source 104 to prevent backflow of fluid from the boiler to the fluid source 104.
- the boiler 130 receives fluid from one or both of the fluid sources 102, 104 and heats and/or pressurizes the process fluids to form vapors and/or supercritical fluids.
- the fluid is flowed from the boiler 130 through a conduit 124 to a conduit 128 which is in fluid communication with the process chamber 132.
- a valve 126 is disposed on the conduit 124 between the conduit 128 and the boiler 130 to control fluid flow between the boiler 130 and the process chamber 132.
- the fluid source 106 is in fluid communication with the process chamber 132 via a conduit 1 18 and the conduit 128 which is coupled to the process chamber.
- a valve 122 is disposed on the conduit 1 18 between the fluid source 106 and the conduit 128 to control fluid flow between the fluid source 106 and the process chamber 132.
- a check valve 120 such as a unidirectional flow valve, is also disposed on the conduit 1 18 between the valve 122 and the fluid source 106 to prevent backflow of fluid between the process chamber 132 and the fluid source 106.
- a portion of each of the conduits 108, 1 12, 1 18 disposed downstream from the valves 1 10, 1 16, 122, respectively, are condensation controlled. For example, those portions are jacketed and heated to prevent condensation of fluid flowing through the portions. Alternatively, those portions are p-trapped to collect condensation from fluid flowing through the portions. Conduits 124, 128 are also condensation controlled. Similar to the conduits 108, 1 12, 1 18, the conduits 124, 128 may be jacketed and heated and/or p-trapped to substantially prevent or collect condensation of fluid flowing through the conduits 124, 128.
- the process chamber 132 is configured as a high pressure/high temperature vessel capable of operating at pressures utilized to maintain vapors and/or supercritical fluids for substrate processing.
- the process chamber 132 is a single substrate process chamber.
- the process chamber 132 is a batch process chamber for processing multiple substrates at one time.
- the process chamber 132 may also be configured for performing various substrate processing operations, such as substrate cleaning or the like.
- the process chamber 132 is configured for performing a supercritical substrate cleaning process.
- the condenser 150 Disposed in the downstream region 180 from the process chamber 132, the condenser 150 is in fluid communication with the process chamber 132.
- a conduit 134 extends from the process chamber 132 to a heat exchanger 140.
- a valve 136 is disposed on the conduit 134 between the process chamber 132 and the heat exchanger 140 to control fluid flow between the process chamber 132 and the heat exchanger 140.
- a check valve 138 such as a unidirectional valve, is disposed on the conduit 134 between the valve 136 and the heat exchanger 140 to prevent backflow of fluid from the heat exchanger 140 into the process chamber 132.
- the heat exchanger 140 is utilized to cool fluid flowing from the process chamber 132.
- Fluids cooled by the heat exchanger 140 flow through a conduit 144 to the condenser 150.
- a heat exchanger 152 is also in fluid communication with the heat exchanger 140 via a conduit 142 which is coupled to the conduit 144.
- the conduit 142 is coupled to the conduit 144 between the condenser 150 and the heat exchanger 140.
- a valve 148 such as a throttle valve or the like, is disposed on the conduit 144 between the condenser 150 and the conduit 142 to control fluid flowing to the condenser 150 from the heat exchanger 140.
- a valve 146 is disposed on the conduit 142 between the conduit 144 and the heat exchanger 152. When the valve 148 is closed and the valve 146 is opened, fluid flows from the heat exchanger 140 to the heat exchanger 152.
- a fluid flow path incorporating the heat exchanger 152 is utilized for further cooling and pressurization of gases exiting the heat exchanger 140.
- a conduit 154 extends from the heat exchanger 152 to an exhaust 156. Cooled gases at pressures reduced from those utilized in the process chamber 132 are diverted prior to reaching the condenser 150.
- the exhaust 156 removes the gases from the system 100, for example, by delivering the gases to a facility exhaust.
- the conduit 134 is condensation controlled.
- the conduit 134 is jacketed and heated to prevent condensation of fluid flowing from the process chamber 132 to the heat exchanger 140.
- the conduit 134 is p-trapped to collect condensation from fluid flowing from the process chamber 132 to the heat exchanger 140.
- the conduit 142 is also condensation controlled.
- a portion of the conduit 144 between the heat exchanger 140 and the valve 148 is similarly condensation controlled.
- the condenser 150 is a temperature and pressure controlled vessel which condenses fluid received from the process chamber 132 to make collection of the fluid as a liquid more efficient. By condensing the fluid to a liquid, the fluid may be filtered and reutilized in subsequent substrate processing operations.
- the condenser 150 includes physical features for increasing the surface area of material exposed to the fluid in the condenser 150.
- a porous scaffolding or porous filter is disposed within the condenser to increase the surface area over which the fluid flows within the condenser 150.
- the porous scaffolding or porous filter is formed from a sintered metal material.
- extended and/or tortured fluid flow pathways are disposed within the condenser 150 to further facilitate more efficient fluid condensation.
- the condenser 150 includes a heat sink to further cool fluid delivered to the condenser 150.
- the heat sink may be temperature controlled to encourage condensation of the fluid on the heat sink.
- the heat sink is finned to increase the surface area within the condenser 150 to facilitate condensation.
- the structures of the condenser 150 and the heat sink are temperature controlled to be below the condensation temperature of the fluid to be condensed within the condenser 150. It is also contemplated that as condensation progresses, pressure within the condenser drops which may be utilized to facilitate flow of the condensed fluid from the condenser 150.
- a level sensor 164 is operably coupled to the condenser 150.
- the level sensor 164 such as a float or the like, determines an amount of condensed fluid within the condenser 150.
- data derived from the level sensor 164 regarding the amount of fluid in the condenser 150 is utilized to operate a valve 160 which controls fluid flow from the condenser 150 via a conduit 158 to a fluid collection unit 166.
- the fluid collection unit 166 collects condensed fluid form the condenser 150 and may optionally filter the fluid to prepare the fluid for reuse.
- a heat exchanger 162 is also disposed on the conduit 158 between the fluid collection unit 166 and the valve 160 to further cool the condensed fluid prior to delivering the fluid to the fluid collection unit 166.
- a fluid is heated and/or pressurized in the boiler 130 and delivered to the process chamber 132 to process a substrate disposed therein. After processing of the substrate, the fluid is delivered to the condenser 150 to condense and collect the condensed fluid in a fluid collection unit 166.
- Various examples of fluid processing regimes utilizing the apparatus 100 are described in detail below.
- valve 136 is closed and valve 126, which may be a throttle valve, is opened.
- a temperature of the boiler 130 is set such that a pressure of the boiler 130 is greater than a temperature of the process chamber 132.
- valve 126 functions as a pressure regulator and valve 136 functions as a pressure bleed from the process chamber 132 if a pressure of the process chamber 132 is above a predetermined threshold.
- valve 126 functions as a flow limiting valve and valve 136 functions as a back pressure regulator to facilitate pressure control within the process chamber 132.
- the embodiments, described above may be implemented with or without active flow of fluid through the system, depending upon the desired implementation.
- water is utilized to form a process fluid.
- the process chamber 132 is opened by closing valve 126 and opening valve 136 and valve 160.
- the condensation controlled conduits described above are heated to a temperature of between about 275°C and about 300°C.
- the boiler 130 is pressurized to about 50 bar and heated to a temperature suitable to facilitate formation of water vapor.
- a substrate is positioned in the process chamber 132, the process chamber 132 is closed, and the process chamber 132 purged by opening valve 122 to deliver purge gas from the fluid source 106. After purging, valve 122 is closed.
- the process chamber 132 is heated to a temperature of between about 450°C and about 500°C and valve 136 and valve 160 are closed prior to, during, or after heating of the process chamber 132.
- Valve 126 is opened to pressurize the process chamber 132 by delivery of the process fluid. As a result, the pressure and temperature of the boiler 130 will be reduced. Valve 126 is then closed while the boiler 130 recovers and valve 126 is reopened when the pressure of the boiler 130 is about equal to the pressure of the process chamber 132.
- Valve 126 is closed when the pressure within the process chamber 132 is between about 40 bar and about 50 bar.
- the substrate is processed for a predetermined amount of time and then valve 136 is opened to depressurize the process chamber 132.
- the process fluid is condensed in the condenser 150 which is maintained at a temperature of between about 50°C and about 80°C and a pressure of about 1 ATM.
- valve 160 is opened and the condensed fluid is delivered to the fluid collection unit 166.
- the process chamber 132 has cooled, the processed substrate is then removed.
- C0 2 is utilized to form a process fluid.
- the process chamber 132 is “opened” by closing valve 126 and opening valve 136 and valve 160.
- the condensation controlled conduits described above are heated to a temperature of between about 30°C and about 100°C.
- the condenser 150 is controlled at a temperature of between about 8°C and about 10°C.
- the boiler 130 is heated to a temperature of about 100°C and maintained at a pressure suitable to facilitate formation of supercritical C0 2 .
- a substrate is positioned in the process chamber 132, the process chamber 132 is closed, and the process chamber 132 purged by opening valve 122 to deliver purge gas from the fluid source 106. After purging, valve 122 is closed.
- valve 136 and valve 160 are closed.
- Valve 126 is opened to pressurize the process chamber 132 by delivery of the process fluid. As a result, the pressure and temperature of the boiler 130 will be reduced. Valve 126 is then closed while the boiler 130 recovers and valve 126 is reopened when the pressure of the boiler 130 is about equal to the pressure of the process chamber 132.
- Valve 126 is closed when the pressure within the process chamber 132 is between about 80 bar and about 100 bar.
- the substrate is processed for a predetermined amount of time and then valve 136 is opened to depressurize the process chamber 132.
- the heat exchanger 140 reduces the temperature of fluid flowing from the process chamber 132 from a temperature of about 100°C to a temperature of about 50°C.
- the process fluid is condensed in the condenser 150 which is maintained at a temperature of between about 8°C and about 10°C and a pressure of about 45 bar.
- valve 160 is opened and the condensed fluid is delivered to the fluid collection unit 166.
- One or both of conduits 142 and 154 are opened to remove gas and further depressurize the system 100.
- the process chamber 132 has cooled, the processed substrate is then removed.
- NH 3 is utilized to form a process fluid.
- the process chamber 132 is “opened” by closing valve 126 and opening valve 136 and valve 160.
- the condensation controlled conduits described above are heated to a temperature of about 50°C.
- the condenser 150 is controlled at a temperature of -20°C.
- the boiler 130 is heated to a temperature of about 45°C and maintained at a pressure suitable to facilitate formation of supercritical NH 3 .
- a substrate is positioned in the process chamber 132, the process chamber 132 is closed, and the process chamber 132 purged by opening valve 122 to deliver purge gas from the fluid source 106. After purging, valve 122 is closed.
- valve 136 and valve 160 are closed.
- Valve 126 is opened to pressurize the process chamber 132 by delivery of the process fluid. As a result, the pressure and temperature of the boiler 130 will be reduced. Valve 126 is then closed while the boiler 130 recovers and valve 126 is reopened when the pressure of the boiler 130 is about equal to the pressure of the process chamber 132.
- Valve 126 is closed when the pressure within the process chamber 132 is between about 10 bar.
- the substrate is processed for a predetermined amount of time and then valve 136 is opened to depressurize the process chamber 132.
- the heat exchanger 140 reduces the temperature of fluid flowing from the process chamber 132 from a temperature of about 500°C to a temperature of about 50°C.
- the process fluid is condensed in the condenser 150 which is maintained at a temperature of about -20°C and a pressure of about 2 bar.
- valve 160 is opened and the condensed fluid is delivered to the fluid collection unit 166.
- One or both of conduits 142 and 154 are opened to remove gas and further depressurize the system 100.
- the process chamber 132 has cooled, the processed substrate is then removed.
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same. The processing system includes a process chamber, a boiler, a condenser, and one or more heat exchangers. The boiler generates a fluid, such as a vapor or supercritical fluid, and delivers the fluid to the process chamber where a substrate is processed. After processing the substrate, the system is depressurized and the fluid is delivered to the condenser where the fluid is condensed.
Description
CONDENSER SYSTEM FOR HIGH PRESSURE PROCESSING SYSTEM
BACKGROUND
Field
[0001] Embodiments of the present disclosure generally relate to a substrate processing apparatus. More specifically, embodiments described herein relate to a condenser system for a high pressure processing system.
Description of the Related Art
[0002] Conventional substrate processing systems often operate at reduced pressures during processing operations. Recent developments in certain processing technology, such as substrate cleaning, utilize high pressure environments compatible with steam or supercritical fluids. However, conventional apparatus are not equipped to accommodate the unique pressure regimes associated with supercritical fluid processing. Moreover, conventional apparatus cannot easily be retrofitted to accommodate high pressure operating environments without the unnecessary risk of catastrophic apparatus failure.
[0003] Thus, what is needed in the art is a condenser system for a high pressure processing system.
SUMMARY
[0004] In one embodiment, a substrate process system is provided. The system includes a process chamber, a boiler in fluid communication with the process chamber via a first conduit, and a first valve disposed on the first conduit between the boiler and the process chamber. A condenser is in fluid communication with the process chamber via a second conduit and a second valve is disposed on the second conduit between the condenser and the process chamber. A heat exchanger is in fluid communication with the condenser via a
third conduit and a third valve is disposed on the third conduit between the condenser and the heat exchanger.
[0005] In another embodiment, a substrate processing system is provided. The system includes a process chamber, a boiler in fluid communication with the process chamber via a first conduit, and a first valve disposed on the first conduit between the boiler and the process chamber. A condenser is in fluid communication with the process chamber and a second valve is disposed on the second conduit between the condenser and the process chamber. A first heat exchanger is disposed on the second conduit between the process chamber and the condenser and a fluid collection unit is in fluid communication with the condenser via a third conduit. A second heat exchanger is disposed on the third conduit between the condenser and the fluid collection unit and a third valve is disposed on the third conduit between the condenser and the second heat exchanger.
[0006] In yet another embodiment, a substrate process method is provided. The method includes heating conduits extending from a process chamber and heating a boiler in fluid communication with the process chamber. Valves disposed on conduits located upstream from the process chamber are closed and valves disposed on conduits located downstream from the process chamber are opened. A substrate is positioned in the process chamber, the process chamber is heated, the valves disposed on conduits located downstream from the process chamber are closed, and the valves disposed on conduits located upstream from the process chamber are opened to enable a fluid generated by the boiler to pressurize the process chamber. The valves disposed on conduits locate downstream from the process chamber are opened and the fluid from the process chamber is flowed to a condenser.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, may admit to other equally effective embodiments.
[0008] Figure 1 is a schematic illustration of a high pressure processing system with a condenser according to an embodiment described herein.
[0009] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
[0010] Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same. The processing system includes a process chamber, a boiler, a condenser, and one or more heat exchangers. The boiler generates a fluid, such as a vapor or supercritical fluid, and delivers the fluid to the process chamber where a substrate is processed. After processing the substrate, the system is depressurized and the fluid is delivered to the condenser where the fluid is condensed.
[0011] Figure 1 is a schematic illustration of a high pressure processing system 100 with a condenser 150 according to an embodiment described herein. The system 100 includes a process chamber 132, a boiler 130, one or more heat exchangers 140, 152, 162, and the condenser 150. The boiler 130 is disposed in an upstream region 170 from the process chamber 132 and the heat exchangers
140, 152, 162 and condenser 150 are disposed in a downstream region 180 from the process chamber 132.
[0012] The system 100 also includes a plurality of fluid sources 102, 104, 106. In one embodiment, the fluid source 102 is a process liquid source, for example, a water source; the fluid source 104 is a process gas source, for example, a C02 gas source or a NH3 gas source; and the fluid source 106 is a purge gas source, for example, an inert gas source, such as an argon gas or nitrogen gas source.
[0013] The fluid source 102 is in fluid communication with the boiler 130 via a conduit 108. A valve 1 10 is disposed on the conduit 108 between the fluid source 102 and the boiler 130 to control fluid flow between the fluid source 102 and the boiler 130. The fluid source 104 is in fluid communication with the boiler 130 via a conduit 1 12. A valve 1 16 is disposed on the conduit 1 12 between the fluid source 104 and the boiler 130 to control fluid flow between the fluid source 104 and the boiler 130. A check valve 1 14, such as a unidirectional flow valve, is also disposed on the conduit 1 12 between the valve 1 16 and the fluid source 104 to prevent backflow of fluid from the boiler to the fluid source 104.
[0014] In operation, the boiler 130 receives fluid from one or both of the fluid sources 102, 104 and heats and/or pressurizes the process fluids to form vapors and/or supercritical fluids. The fluid is flowed from the boiler 130 through a conduit 124 to a conduit 128 which is in fluid communication with the process chamber 132. A valve 126 is disposed on the conduit 124 between the conduit 128 and the boiler 130 to control fluid flow between the boiler 130 and the process chamber 132.
[0015] The fluid source 106 is in fluid communication with the process chamber 132 via a conduit 1 18 and the conduit 128 which is coupled to the process chamber. A valve 122 is disposed on the conduit 1 18 between the fluid source 106 and the conduit 128 to control fluid flow between the fluid source 106 and the process chamber 132. A check valve 120, such as a unidirectional flow
valve, is also disposed on the conduit 1 18 between the valve 122 and the fluid source 106 to prevent backflow of fluid between the process chamber 132 and the fluid source 106.
[0016] A portion of each of the conduits 108, 1 12, 1 18 disposed downstream from the valves 1 10, 1 16, 122, respectively, are condensation controlled. For example, those portions are jacketed and heated to prevent condensation of fluid flowing through the portions. Alternatively, those portions are p-trapped to collect condensation from fluid flowing through the portions. Conduits 124, 128 are also condensation controlled. Similar to the conduits 108, 1 12, 1 18, the conduits 124, 128 may be jacketed and heated and/or p-trapped to substantially prevent or collect condensation of fluid flowing through the conduits 124, 128.
[0017] The process chamber 132 is configured as a high pressure/high temperature vessel capable of operating at pressures utilized to maintain vapors and/or supercritical fluids for substrate processing. In one embodiment, the process chamber 132 is a single substrate process chamber. In another embodiment, the process chamber 132 is a batch process chamber for processing multiple substrates at one time. The process chamber 132 may also be configured for performing various substrate processing operations, such as substrate cleaning or the like. In one example, the process chamber 132 is configured for performing a supercritical substrate cleaning process.
[0018] Disposed in the downstream region 180 from the process chamber 132, the condenser 150 is in fluid communication with the process chamber 132. A conduit 134 extends from the process chamber 132 to a heat exchanger 140. A valve 136 is disposed on the conduit 134 between the process chamber 132 and the heat exchanger 140 to control fluid flow between the process chamber 132 and the heat exchanger 140. A check valve 138, such as a unidirectional valve, is disposed on the conduit 134 between the valve 136 and the heat exchanger 140 to prevent backflow of fluid from the heat exchanger 140 into the process chamber 132.
[0019] The heat exchanger 140 is utilized to cool fluid flowing from the process chamber 132. Fluids cooled by the heat exchanger 140 flow through a conduit 144 to the condenser 150. A heat exchanger 152 is also in fluid communication with the heat exchanger 140 via a conduit 142 which is coupled to the conduit 144. The conduit 142 is coupled to the conduit 144 between the condenser 150 and the heat exchanger 140.
[0020] A valve 148, such as a throttle valve or the like, is disposed on the conduit 144 between the condenser 150 and the conduit 142 to control fluid flowing to the condenser 150 from the heat exchanger 140. A valve 146 is disposed on the conduit 142 between the conduit 144 and the heat exchanger 152. When the valve 148 is closed and the valve 146 is opened, fluid flows from the heat exchanger 140 to the heat exchanger 152. A fluid flow path incorporating the heat exchanger 152 is utilized for further cooling and pressurization of gases exiting the heat exchanger 140.
[0021] A conduit 154 extends from the heat exchanger 152 to an exhaust 156. Cooled gases at pressures reduced from those utilized in the process chamber 132 are diverted prior to reaching the condenser 150. The exhaust 156 removes the gases from the system 100, for example, by delivering the gases to a facility exhaust.
[0022] The conduit 134 is condensation controlled. In one embodiment, the conduit 134 is jacketed and heated to prevent condensation of fluid flowing from the process chamber 132 to the heat exchanger 140. Alternatively, the conduit 134 is p-trapped to collect condensation from fluid flowing from the process chamber 132 to the heat exchanger 140. Similar to the conduit 134, the conduit 142 is also condensation controlled. A portion of the conduit 144 between the heat exchanger 140 and the valve 148 is similarly condensation controlled. By condensation controlling the aforementioned conduits 134, 142, 144 premature condensation of fluid flowing from the process chamber 132 to the condenser 150 is avoided or substantially reduced.
[0023] The condenser 150 is a temperature and pressure controlled vessel which condenses fluid received from the process chamber 132 to make collection of the fluid as a liquid more efficient. By condensing the fluid to a liquid, the fluid may be filtered and reutilized in subsequent substrate processing operations. In one embodiment, the condenser 150 includes physical features for increasing the surface area of material exposed to the fluid in the condenser 150. In one example, a porous scaffolding or porous filter is disposed within the condenser to increase the surface area over which the fluid flows within the condenser 150. For example, the porous scaffolding or porous filter is formed from a sintered metal material. In another embodiment, extended and/or tortured fluid flow pathways are disposed within the condenser 150 to further facilitate more efficient fluid condensation.
[0024] In one embodiment, the condenser 150 includes a heat sink to further cool fluid delivered to the condenser 150. The heat sink may be temperature controlled to encourage condensation of the fluid on the heat sink. In one embodiment, the heat sink is finned to increase the surface area within the condenser 150 to facilitate condensation. In various embodiments, the structures of the condenser 150 and the heat sink are temperature controlled to be below the condensation temperature of the fluid to be condensed within the condenser 150. It is also contemplated that as condensation progresses, pressure within the condenser drops which may be utilized to facilitate flow of the condensed fluid from the condenser 150.
[0025] A level sensor 164 is operably coupled to the condenser 150. The level sensor 164, such as a float or the like, determines an amount of condensed fluid within the condenser 150. In one embodiment, data derived from the level sensor 164 regarding the amount of fluid in the condenser 150 is utilized to operate a valve 160 which controls fluid flow from the condenser 150 via a conduit 158 to a fluid collection unit 166. The fluid collection unit 166 collects condensed fluid form the condenser 150 and may optionally filter the fluid to
prepare the fluid for reuse. A heat exchanger 162 is also disposed on the conduit 158 between the fluid collection unit 166 and the valve 160 to further cool the condensed fluid prior to delivering the fluid to the fluid collection unit 166.
[0026] In operation, a fluid is heated and/or pressurized in the boiler 130 and delivered to the process chamber 132 to process a substrate disposed therein. After processing of the substrate, the fluid is delivered to the condenser 150 to condense and collect the condensed fluid in a fluid collection unit 166. Various examples of fluid processing regimes utilizing the apparatus 100 are described in detail below.
[0027] Pressure within the system 100 is controlled by a temperature of the boiler 130. In this embodiment, valve 136 is closed and valve 126, which may be a throttle valve, is opened. A temperature of the boiler 130 is set such that a pressure of the boiler 130 is greater than a temperature of the process chamber 132. In this embodiment, valve 126 functions as a pressure regulator and valve 136 functions as a pressure bleed from the process chamber 132 if a pressure of the process chamber 132 is above a predetermined threshold. In another embodiment, valve 126 functions as a flow limiting valve and valve 136 functions as a back pressure regulator to facilitate pressure control within the process chamber 132. The embodiments, described above may be implemented with or without active flow of fluid through the system, depending upon the desired implementation.
[0028] In one embodiment, water is utilized to form a process fluid. In operation, the process chamber 132 is opened by closing valve 126 and opening valve 136 and valve 160. The condensation controlled conduits described above are heated to a temperature of between about 275°C and about 300°C. The boiler 130 is pressurized to about 50 bar and heated to a temperature suitable to facilitate formation of water vapor. A substrate is positioned in the process chamber 132, the process chamber 132 is closed, and the process chamber 132
purged by opening valve 122 to deliver purge gas from the fluid source 106. After purging, valve 122 is closed.
[0029] The process chamber 132 is heated to a temperature of between about 450°C and about 500°C and valve 136 and valve 160 are closed prior to, during, or after heating of the process chamber 132. Valve 126 is opened to pressurize the process chamber 132 by delivery of the process fluid. As a result, the pressure and temperature of the boiler 130 will be reduced. Valve 126 is then closed while the boiler 130 recovers and valve 126 is reopened when the pressure of the boiler 130 is about equal to the pressure of the process chamber 132.
[0030] Valve 126 is closed when the pressure within the process chamber 132 is between about 40 bar and about 50 bar. The substrate is processed for a predetermined amount of time and then valve 136 is opened to depressurize the process chamber 132. The process fluid is condensed in the condenser 150 which is maintained at a temperature of between about 50°C and about 80°C and a pressure of about 1 ATM. When the pressure within the process chamber 132 has stabilized, valve 160 is opened and the condensed fluid is delivered to the fluid collection unit 166. When the process chamber 132 has cooled, the processed substrate is then removed.
[0031] In another embodiment, C02 is utilized to form a process fluid. In operation, the process chamber 132 is “opened” by closing valve 126 and opening valve 136 and valve 160. The condensation controlled conduits described above are heated to a temperature of between about 30°C and about 100°C. The condenser 150 is controlled at a temperature of between about 8°C and about 10°C. The boiler 130 is heated to a temperature of about 100°C and maintained at a pressure suitable to facilitate formation of supercritical C02. A substrate is positioned in the process chamber 132, the process chamber 132 is closed, and the process chamber 132 purged by opening valve 122 to deliver purge gas from the fluid source 106. After purging, valve 122 is closed.
[0032] The process chamber 132 pressurized to about 80 bar, heated to a temperature of between about 100°C, and valve 136 and valve 160 are closed. Valve 126 is opened to pressurize the process chamber 132 by delivery of the process fluid. As a result, the pressure and temperature of the boiler 130 will be reduced. Valve 126 is then closed while the boiler 130 recovers and valve 126 is reopened when the pressure of the boiler 130 is about equal to the pressure of the process chamber 132.
[0033] Valve 126 is closed when the pressure within the process chamber 132 is between about 80 bar and about 100 bar. The substrate is processed for a predetermined amount of time and then valve 136 is opened to depressurize the process chamber 132. The heat exchanger 140 reduces the temperature of fluid flowing from the process chamber 132 from a temperature of about 100°C to a temperature of about 50°C. The process fluid is condensed in the condenser 150 which is maintained at a temperature of between about 8°C and about 10°C and a pressure of about 45 bar. When the pressure within the process chamber 132 has stabilized, valve 160 is opened and the condensed fluid is delivered to the fluid collection unit 166. One or both of conduits 142 and 154 are opened to remove gas and further depressurize the system 100. When the process chamber 132 has cooled, the processed substrate is then removed.
[0034] In another embodiment, NH3 is utilized to form a process fluid. In operation, the process chamber 132 is “opened” by closing valve 126 and opening valve 136 and valve 160. The condensation controlled conduits described above are heated to a temperature of about 50°C. The condenser 150 is controlled at a temperature of -20°C. The boiler 130 is heated to a temperature of about 45°C and maintained at a pressure suitable to facilitate formation of supercritical NH3. A substrate is positioned in the process chamber 132, the process chamber 132 is closed, and the process chamber 132 purged by opening valve 122 to deliver purge gas from the fluid source 106. After purging, valve 122 is closed.
[0035] The process chamber 132 pressurized to about 10 bar, heated to a temperature of about 500°C, and valve 136 and valve 160 are closed. Valve 126 is opened to pressurize the process chamber 132 by delivery of the process fluid. As a result, the pressure and temperature of the boiler 130 will be reduced. Valve 126 is then closed while the boiler 130 recovers and valve 126 is reopened when the pressure of the boiler 130 is about equal to the pressure of the process chamber 132.
[0036] Valve 126 is closed when the pressure within the process chamber 132 is between about 10 bar. The substrate is processed for a predetermined amount of time and then valve 136 is opened to depressurize the process chamber 132. The heat exchanger 140 reduces the temperature of fluid flowing from the process chamber 132 from a temperature of about 500°C to a temperature of about 50°C. The process fluid is condensed in the condenser 150 which is maintained at a temperature of about -20°C and a pressure of about 2 bar. When the pressure within the process chamber 132 has stabilized, valve 160 is opened and the condensed fluid is delivered to the fluid collection unit 166. One or both of conduits 142 and 154 are opened to remove gas and further depressurize the system 100. When the process chamber 132 has cooled, the processed substrate is then removed.
[0037] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims
1. A substrate processing system, comprising:
a process chamber;
a boiler in fluid communication with the process chamber via a first conduit; a first valve disposed on the first conduit between the boiler and the process chamber;
a condenser in fluid communication with the process chamber via a second conduit;
a second valve disposed on the second conduit between the condenser and the process chamber;
a heat exchanger in fluid communication with the condenser via a third conduit; and
a third valve disposed on the third conduit between the condenser and the heat exchanger.
2. The system of claim 1 , wherein the process chamber is a single substrate process chamber.
3. The system of claim 1 , wherein the process chamber is a batch substrate process chamber.
4. The system of claim 1 , wherein the boiler is in fluid communication with one or more of a water source, a carbon dioxide source, or an ammonia source.
5. The system of claim 1 , further comprising:
a second heat exchanger disposed on the second conduit between the process chamber and the condenser.
6. The system of claim 5, wherein the second valve is disposed on the second conduit between the process chamber and the second heat exchanger.
7. The system of claims 6, wherein a check valve is disposed on the second conduit between the second heat exchanger and the second valve.
8. The system of claim 5, further comprising:
a third heat exchanger disposed on a fourth conduit which extends from the second conduit.
9. The system of claim 8, wherein a fourth valve is disposed on the fourth conduit between the second heat exchanger and the third heat exchanger.
10. The system of claim 1 , wherein the condenser includes a heat sink.
11. The system of claim 1 , further comprising:
a level sensor in operable communication with the condenser.
12. A substrate processing system, comprising:
a process chamber;
a boiler in fluid communication with the process chamber via a first conduit; a first valve disposed on the first conduit between the boiler and the process chamber;
a condenser in fluid communication with the process chamber via a second conduit;
a second valve disposed on the second conduit between the condenser and the process chamber;
a first heat exchanger disposed on the second conduit between the process chamber and the condenser;
a fluid collection unit in fluid communication with the condenser via a third conduit;
a second heat exchanger disposed on the third conduit between the condenser and the fluid collection unit; and
a third valve disposed on the third conduit between the condenser and the second heat exchanger.
13. The system of claim 12, further comprising:
a third heat exchanger disposed on a fourth conduit which extends from the second conduit.
14. The system of claim 13, wherein a fourth valve is disposed on the fourth conduit between the first heat exchanger and the third heat exchanger.
15. A substrate process method, comprising:
heating conduits extending from a process chamber;
heating a boiler in fluid communication with the process chamber;
closing valves disposed on conduits located upstream of the process chamber;
opening valves disposed on conduit located downstream from the process chamber;
positioning a substrate in the process chamber;
heating the process chamber;
closing the valves disposed on conduits located downstream from the process chamber;
opening the valves disposed on conduits located upstream from the process chamber to enable a fluid generated by the boiler to pressurize the process chamber;
opening the valves disposed on conduits located downstream from the process chamber; and
flowing the fluid from the process to a condenser.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201880074319.5A CN111432920A (en) | 2017-11-17 | 2018-11-07 | Condenser system for high pressure processing system |
| KR1020207017412A KR20200075892A (en) | 2017-11-17 | 2018-11-07 | Condenser system for high pressure treatment systems |
| JP2020526345A JP2021503714A (en) | 2017-11-17 | 2018-11-07 | Capacitor system for high pressure processing system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762587916P | 2017-11-17 | 2017-11-17 | |
| US62/587,916 | 2017-11-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2019099255A2 true WO2019099255A2 (en) | 2019-05-23 |
| WO2019099255A3 WO2019099255A3 (en) | 2019-07-11 |
Family
ID=66532528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2018/059676 Ceased WO2019099255A2 (en) | 2017-11-17 | 2018-11-07 | Condenser system for high pressure processing system |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10685830B2 (en) |
| JP (1) | JP2021503714A (en) |
| KR (1) | KR20200075892A (en) |
| CN (1) | CN111432920A (en) |
| TW (1) | TW201926509A (en) |
| WO (1) | WO2019099255A2 (en) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| JP6947914B2 (en) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Annealing chamber under high pressure and high temperature |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| CN111095524B (en) | 2017-09-12 | 2023-10-03 | 应用材料公司 | Apparatus and method for fabricating semiconductor structures using protective barrier layers |
| KR102585074B1 (en) | 2017-11-11 | 2023-10-04 | 마이크로머티어리얼즈 엘엘씨 | Gas delivery system for high pressure processing chamber |
| SG11202003438QA (en) | 2017-11-16 | 2020-05-28 | Applied Materials Inc | High pressure steam anneal processing apparatus |
| JP2021503714A (en) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Capacitor system for high pressure processing system |
| CN111902929B (en) | 2018-03-09 | 2025-09-19 | 应用材料公司 | High pressure annealing process for metal-containing materials |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP7179172B6 (en) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | Method for etching structures for semiconductor applications |
| KR20210077779A (en) | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | Film Deposition Using Enhanced Diffusion Process |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US11710647B2 (en) * | 2021-01-28 | 2023-07-25 | Applied Materials, Inc. | Hyperbaric clean method and apparatus for cleaning semiconductor chamber components |
| KR102726260B1 (en) * | 2021-05-28 | 2024-11-06 | 세메스 주식회사 | Apparatus for treating substrate |
| KR102729443B1 (en) * | 2021-12-13 | 2024-11-13 | 세메스 주식회사 | Substrate processing apparatus and substrate processing method |
| US12326278B2 (en) | 2022-02-28 | 2025-06-10 | EnhancedGEO Holdings, LLC | Geothermal power from superhot geothermal fluid and magma reservoirs |
| US12055131B2 (en) | 2022-02-28 | 2024-08-06 | EnhancedGEO Holdings, LLC | Geothermal power from superhot geothermal fluid and magma reservoirs |
| JPWO2024085000A1 (en) * | 2022-10-20 | 2024-04-25 | ||
| US12504203B2 (en) | 2023-02-10 | 2025-12-23 | EnhancedGEO Holdings, LLC | Reverse-flow magma-based geothermal generation |
| US11912573B1 (en) | 2023-03-03 | 2024-02-27 | EnhancedGEO Holdings, LLC | Molten-salt mediated thermochemical reactions using geothermal energy |
| US12570826B2 (en) | 2023-08-14 | 2026-03-10 | EnhancedGEO Holdings, LLC | Thermal depolymerization and monomer repurposing using geothermal energy |
| US12522710B2 (en) | 2023-08-14 | 2026-01-13 | EnhancedGEO Holdings, LLC | Flow through process for thermal depolymerization and monomer repurposing using geothermal energy |
Family Cites Families (594)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4524587A (en) | 1967-01-10 | 1985-06-25 | Kantor Frederick W | Rotary thermodynamic apparatus and method |
| US3684592A (en) | 1969-09-30 | 1972-08-15 | Westinghouse Electric Corp | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same |
| US3758316A (en) | 1971-03-30 | 1973-09-11 | Du Pont | Refractory materials and process for making same |
| US3749383A (en) | 1971-04-29 | 1973-07-31 | Rca Corp | Apparatus for processing semiconductor devices |
| US4409260A (en) | 1979-08-15 | 1983-10-11 | Hughes Aircraft Company | Process for low-temperature surface layer oxidation of a semiconductor substrate |
| US4424101A (en) | 1980-11-06 | 1984-01-03 | The Perkin-Elmer Corp. | Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques |
| US4589193A (en) | 1984-06-29 | 1986-05-20 | International Business Machines Corporation | Metal silicide channel stoppers for integrated circuits and method for making the same |
| US4576652A (en) | 1984-07-12 | 1986-03-18 | International Business Machines Corporation | Incoherent light annealing of gallium arsenide substrate |
| JPS634616A (en) | 1986-06-25 | 1988-01-09 | Hitachi Tokyo Electron Co Ltd | Steam treating unit |
| JPS6367721A (en) | 1986-09-09 | 1988-03-26 | Meidensha Electric Mfg Co Ltd | Manufacture of amorphous carbon semiconductor film |
| JPH0748489B2 (en) | 1987-07-27 | 1995-05-24 | 富士通株式会社 | Plasma processing device |
| US4879259A (en) | 1987-09-28 | 1989-11-07 | The Board Of Trustees Of The Leland Stanford Junion University | Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure |
| CA1308496C (en) | 1988-02-18 | 1992-10-06 | Rajiv V. Joshi | Deposition of tungsten on silicon in a non-self-limiting cvd process |
| US5114513A (en) | 1988-10-27 | 1992-05-19 | Omron Tateisi Electronics Co. | Optical device and manufacturing method thereof |
| US5167717A (en) | 1989-02-15 | 1992-12-01 | Charles Boitnott | Apparatus and method for processing a semiconductor wafer |
| JP2730695B2 (en) | 1989-04-10 | 1998-03-25 | 忠弘 大見 | Tungsten film forming equipment |
| US5126117A (en) | 1990-05-22 | 1992-06-30 | Custom Engineered Materials, Inc. | Device for preventing accidental releases of hazardous gases |
| US5175123A (en) | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| US5050540A (en) | 1991-01-29 | 1991-09-24 | Arne Lindberg | Method of gas blanketing a boiler |
| JP2996524B2 (en) | 1991-03-18 | 2000-01-11 | 松下電子工業株式会社 | Polyimide curing device |
| KR0155572B1 (en) | 1991-05-28 | 1998-12-01 | 이노우에 아키라 | Decompression Treatment System and Decompression Treatment Method |
| DE69233222T2 (en) | 1991-05-28 | 2004-08-26 | Trikon Technologies Ltd., Thornbury | Method of filling a cavity in a substrate |
| US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| JPH0521347A (en) | 1991-07-11 | 1993-01-29 | Canon Inc | Sputtering device |
| JPH0521310A (en) | 1991-07-11 | 1993-01-29 | Canon Inc | Formation of fine pattern |
| JPH05129296A (en) | 1991-11-05 | 1993-05-25 | Fujitsu Ltd | Method of flatting conductive film |
| US5300320A (en) | 1992-06-23 | 1994-04-05 | President And Fellows Of Harvard College | Chemical vapor deposition from single organometallic precursors |
| US5319212A (en) | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
| JPH06283496A (en) | 1993-03-26 | 1994-10-07 | Dainippon Screen Mfg Co Ltd | Dryer of substrate after washing |
| US5607002A (en) | 1993-04-28 | 1997-03-04 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| US5578132A (en) | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| JPH0766424A (en) | 1993-08-20 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JPH07158767A (en) | 1993-12-09 | 1995-06-20 | Kokusai Electric Co Ltd | Gate valve |
| US5460689A (en) | 1994-02-28 | 1995-10-24 | Applied Materials, Inc. | High pressure plasma treatment method and apparatus |
| US5880041A (en) | 1994-05-27 | 1999-03-09 | Motorola Inc. | Method for forming a dielectric layer using high pressure |
| US5597439A (en) | 1994-10-26 | 1997-01-28 | Applied Materials, Inc. | Process gas inlet and distribution passages |
| US5808245A (en) | 1995-01-03 | 1998-09-15 | Donaldson Company, Inc. | Vertical mount catalytic converter muffler |
| JPH08195493A (en) | 1995-01-13 | 1996-07-30 | Toshiba Corp | Method for manufacturing thin film transistor |
| US5620524A (en) | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
| KR100251341B1 (en) | 1995-05-08 | 2000-05-01 | 오카노 사다오 | Manufacturing method of optical waveguide |
| JP2872637B2 (en) | 1995-07-10 | 1999-03-17 | アプライド マテリアルズ インコーポレイテッド | Microwave plasma based applicator |
| JP3684624B2 (en) | 1995-08-02 | 2005-08-17 | ソニー株式会社 | Reaction gas supply device |
| US5747383A (en) | 1995-09-05 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd | Method for forming conductive lines and stacked vias |
| US5857368A (en) | 1995-10-06 | 1999-01-12 | Applied Materials, Inc. | Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion |
| US5877087A (en) | 1995-11-21 | 1999-03-02 | Applied Materials, Inc. | Low temperature integrated metallization process and apparatus |
| JPH09296267A (en) | 1995-11-21 | 1997-11-18 | Applied Materials Inc | Apparatus and method for manufacturing metal path in semiconductor substrate by high-pressure extrusion |
| US5677230A (en) | 1995-12-01 | 1997-10-14 | Motorola | Method of making wide bandgap semiconductor devices |
| US6077571A (en) | 1995-12-19 | 2000-06-20 | The Research Foundation Of State University Of New York | Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation |
| US5895274A (en) | 1996-01-22 | 1999-04-20 | Micron Technology, Inc. | High-pressure anneal process for integrated circuits |
| US5918149A (en) | 1996-02-16 | 1999-06-29 | Advanced Micro Devices, Inc. | Deposition of a conductor in a via hole or trench |
| KR980012044A (en) | 1996-03-01 | 1998-04-30 | 히가시 데츠로 | Substrate drying apparatus and substrate drying method |
| US5998305A (en) | 1996-03-29 | 1999-12-07 | Praxair Technology, Inc. | Removal of carbon from substrate surfaces |
| US5738915A (en) | 1996-09-19 | 1998-04-14 | Lambda Technologies, Inc. | Curing polymer layers on semiconductor substrates using variable frequency microwave energy |
| US6444037B1 (en) | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
| US6082950A (en) | 1996-11-18 | 2000-07-04 | Applied Materials, Inc. | Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding |
| US5886864A (en) | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
| TW347570B (en) | 1996-12-24 | 1998-12-11 | Toshiba Co Ltd | Semiconductor device and method for manufacturing the same |
| US5888888A (en) | 1997-01-29 | 1999-03-30 | Ultratech Stepper, Inc. | Method for forming a silicide region on a silicon body |
| JP2980052B2 (en) | 1997-03-31 | 1999-11-22 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US6334249B2 (en) | 1997-04-22 | 2002-01-01 | Texas Instruments Incorporated | Cavity-filling method for reducing surface topography and roughness |
| US7416611B2 (en) * | 1997-05-09 | 2008-08-26 | Semitool, Inc. | Process and apparatus for treating a workpiece with gases |
| KR100560049B1 (en) | 1997-05-10 | 2006-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | A film forming method |
| JP2976931B2 (en) | 1997-06-04 | 1999-11-10 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US6309713B1 (en) | 1997-06-30 | 2001-10-30 | Applied Materials, Inc. | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
| US6136664A (en) | 1997-08-07 | 2000-10-24 | International Business Machines Corporation | Filling of high aspect ratio trench isolation |
| US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
| KR100261017B1 (en) | 1997-08-19 | 2000-08-01 | 윤종용 | Method for Forming Metal Wiring Layer of Semiconductor Device |
| US6348376B2 (en) | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
| US5963817A (en) | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
| JP3199006B2 (en) | 1997-11-18 | 2001-08-13 | 日本電気株式会社 | Method of forming interlayer insulating film and insulating film forming apparatus |
| US6442980B2 (en) | 1997-11-26 | 2002-09-03 | Chart Inc. | Carbon dioxide dry cleaning system |
| US6140235A (en) | 1997-12-05 | 2000-10-31 | Applied Materials, Inc. | High pressure copper fill at low temperature |
| KR100275727B1 (en) | 1998-01-06 | 2001-01-15 | 윤종용 | Capacitor for semiconductor device & manufacturing method |
| JP3296281B2 (en) | 1998-01-22 | 2002-06-24 | 日本電気株式会社 | Sputtering apparatus and sputtering method |
| US6846739B1 (en) | 1998-02-27 | 2005-01-25 | Micron Technology, Inc. | MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer |
| US6164412A (en) | 1998-04-03 | 2000-12-26 | Arvin Industries, Inc. | Muffler |
| JP3955386B2 (en) | 1998-04-09 | 2007-08-08 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| JPH11354515A (en) | 1998-06-04 | 1999-12-24 | Ishikawajima Harima Heavy Ind Co Ltd | Pressurized heating furnace |
| US6103585A (en) | 1998-06-09 | 2000-08-15 | Siemens Aktiengesellschaft | Method of forming deep trench capacitors |
| KR100319888B1 (en) | 1998-06-16 | 2002-01-10 | 윤종용 | Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same |
| KR100287180B1 (en) | 1998-09-17 | 2001-04-16 | 윤종용 | Method for manufacturing semiconductor device including metal interconnection formed using interface control layer |
| US6719516B2 (en) | 1998-09-28 | 2004-04-13 | Applied Materials, Inc. | Single wafer load lock with internal wafer transport |
| KR100327328B1 (en) | 1998-10-13 | 2002-05-09 | 윤종용 | Method for forming dielectric layer of capacitor having partially different thickness in the layer |
| US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
| KR100331544B1 (en) | 1999-01-18 | 2002-04-06 | 윤종용 | Method for introducing gases into a reactor chamber and a shower head used therein |
| JP2000221799A (en) | 1999-01-29 | 2000-08-11 | Canon Inc | Image forming device |
| KR100804853B1 (en) | 1999-03-04 | 2008-02-20 | 서페이스 테크놀로지 시스템스 피엘씨 | Chlorine Trifluoride Gas Generator System |
| US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
| JP4096440B2 (en) | 1999-03-11 | 2008-06-04 | 三菱瓦斯化学株式会社 | Multilayer molded product |
| US6305314B1 (en) | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| WO2000060659A1 (en) | 1999-04-02 | 2000-10-12 | Silicon Valley Group, Thermal Systems Llc | Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth |
| JP3892621B2 (en) | 1999-04-19 | 2007-03-14 | 株式会社神戸製鋼所 | Method for forming wiring film |
| US6086730A (en) | 1999-04-22 | 2000-07-11 | Komag, Incorporated | Method of sputtering a carbon protective film on a magnetic disk with high sp3 content |
| JP3100372B1 (en) * | 1999-04-28 | 2000-10-16 | 春男 上原 | Heat exchanger |
| JP2000340671A (en) | 1999-05-26 | 2000-12-08 | Fujitsu Ltd | Semiconductor device manufacturing method and semiconductor device |
| JP2001053066A (en) | 1999-05-28 | 2001-02-23 | Tokyo Electron Ltd | Ozone treatment apparatus and method |
| US6355558B1 (en) | 1999-06-10 | 2002-03-12 | Texas Instruments Incorporated | Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films |
| JP2000357699A (en) | 1999-06-16 | 2000-12-26 | Seiko Epson Corp | Semiconductor device |
| EP1069213A3 (en) | 1999-07-12 | 2004-01-28 | Applied Materials, Inc. | Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper |
| US6468490B1 (en) | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
| US6334266B1 (en) | 1999-09-20 | 2002-01-01 | S.C. Fluids, Inc. | Supercritical fluid drying system and method of use |
| US6612317B2 (en) | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
| ATE418158T1 (en) | 1999-08-17 | 2009-01-15 | Applied Materials Inc | SURFACE TREATMENT OF CARBON-DOPED SIO2 FILM TO INCREASE STABILITY DURING O2 ASHING |
| US6299753B1 (en) | 1999-09-01 | 2001-10-09 | Applied Materials, Inc. | Double pressure vessel chemical dispenser unit |
| US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
| JP2001110729A (en) | 1999-10-06 | 2001-04-20 | Mitsubishi Heavy Ind Ltd | Apparratus for continuously manufacturing method of semiconductor element |
| FI117942B (en) | 1999-10-14 | 2007-04-30 | Asm Int | Process for making oxide thin films |
| US6475276B1 (en) | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
| KR100304714B1 (en) | 1999-10-20 | 2001-11-02 | 윤종용 | Method for fabricating metal layer of semiconductor device using metal-halide gas |
| US20030148631A1 (en) | 1999-11-08 | 2003-08-07 | Taiwan Semiconductor Manufacturing Company | Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile |
| US6500603B1 (en) | 1999-11-11 | 2002-12-31 | Mitsui Chemicals, Inc. | Method for manufacturing polymer optical waveguide |
| KR100321561B1 (en) | 1999-11-16 | 2002-01-23 | 박호군 | Method of Manufacturing Ferroelectric Thin Film of Mixed Oxides Containing Volatile Components |
| US6399486B1 (en) | 1999-11-22 | 2002-06-04 | Taiwan Semiconductor Manufacturing Company | Method of improved copper gap fill |
| TW484170B (en) | 1999-11-30 | 2002-04-21 | Applied Materials Inc | Integrated modular processing platform |
| US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
| US6969448B1 (en) | 1999-12-30 | 2005-11-29 | Cypress Semiconductor Corp. | Method for forming a metallization structure in an integrated circuit |
| US6150286A (en) | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
| FI20000099A0 (en) | 2000-01-18 | 2000-01-18 | Asm Microchemistry Ltd | Process for making metal thin films |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6277249B1 (en) | 2000-01-21 | 2001-08-21 | Applied Materials Inc. | Integrated process for copper via filling using a magnetron and target producing highly energetic ions |
| US6251242B1 (en) | 2000-01-21 | 2001-06-26 | Applied Materials, Inc. | Magnetron and target producing an extended plasma region in a sputter reactor |
| US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
| JP2001250787A (en) | 2000-03-06 | 2001-09-14 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and substrate processing method |
| KR100803770B1 (en) | 2000-03-07 | 2008-02-15 | 에이에스엠 인터내셔널 엔.브이. | Gradient (graded) thin film |
| US6506653B1 (en) | 2000-03-13 | 2003-01-14 | International Business Machines Corporation | Method using disposable and permanent films for diffusion and implant doping |
| JP4637989B2 (en) | 2000-03-24 | 2011-02-23 | 株式会社神戸製鋼所 | Method for forming semiconductor wiring film |
| FI117979B (en) | 2000-04-14 | 2007-05-15 | Asm Int | Process for making oxide thin films |
| US20040025908A1 (en) | 2000-04-18 | 2004-02-12 | Stephen Douglas | Supercritical fluid delivery system for semiconductor wafer processing |
| KR100363088B1 (en) | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | Method of manufacturing barrier metal layer using atomic layer deposition method |
| US6921712B2 (en) | 2000-05-15 | 2005-07-26 | Asm International Nv | Process for producing integrated circuits including reduction using gaseous organic compounds |
| US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| US6921722B2 (en) | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
| US6585823B1 (en) | 2000-07-07 | 2003-07-01 | Asm International, N.V. | Atomic layer deposition |
| US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| US6416822B1 (en) | 2000-12-06 | 2002-07-09 | Angstrom Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| KR100385947B1 (en) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | Method of forming thin film by atomic layer deposition |
| US6630201B2 (en) | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
| US6464779B1 (en) | 2001-01-19 | 2002-10-15 | Novellus Systems, Inc. | Copper atomic layer chemical vapor desposition |
| US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| JP4335469B2 (en) | 2001-03-22 | 2009-09-30 | 株式会社荏原製作所 | Method and apparatus for adjusting gas circulation rate of vacuum exhaust device |
| US6797336B2 (en) | 2001-03-22 | 2004-09-28 | Ambp Tech Corporation | Multi-component substances and processes for preparation thereof |
| TW544797B (en) | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
| JP2002319571A (en) | 2001-04-20 | 2002-10-31 | Kawasaki Microelectronics Kk | Etching tank pretreatment method and semiconductor device manufacturing method |
| US7080651B2 (en) | 2001-05-17 | 2006-07-25 | Dainippon Screen Mfg. Co., Ltd. | High pressure processing apparatus and method |
| KR100433846B1 (en) | 2001-05-23 | 2004-06-04 | 주식회사 하이닉스반도체 | Method for forming the Metal Layer Of Semiconductor Device |
| US6752585B2 (en) | 2001-06-13 | 2004-06-22 | Applied Materials Inc | Method and apparatus for transferring a semiconductor substrate |
| EP1271636A1 (en) | 2001-06-22 | 2003-01-02 | Infineon Technologies AG | Thermal oxidation process control by controlling oxidation agent partial pressure |
| US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| JP4358486B2 (en) * | 2001-07-25 | 2009-11-04 | 大日本スクリーン製造株式会社 | High pressure processing apparatus and high pressure processing method |
| JP2003051474A (en) | 2001-08-03 | 2003-02-21 | Kobe Steel Ltd | High-pressure processing apparatus |
| US6889627B1 (en) | 2001-08-08 | 2005-05-10 | Lam Research Corporation | Symmetrical semiconductor reactor |
| US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
| US6781801B2 (en) | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
| JP2003077974A (en) | 2001-08-31 | 2003-03-14 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and method of manufacturing semiconductor device |
| US6619304B2 (en) | 2001-09-13 | 2003-09-16 | Micell Technologies, Inc. | Pressure chamber assembly including non-mechanical drive means |
| US6607976B2 (en) | 2001-09-25 | 2003-08-19 | Applied Materials, Inc. | Copper interconnect barrier layer structure and formation method |
| US20030059538A1 (en) | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7105061B1 (en) | 2001-11-07 | 2006-09-12 | Novellus Systems, Inc. | Method and apparatus for sealing substrate load port in a high pressure reactor |
| US6620956B2 (en) | 2001-11-16 | 2003-09-16 | Applied Materials, Inc. | Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing |
| US20030098069A1 (en) | 2001-11-26 | 2003-05-29 | Sund Wesley E. | High purity fluid delivery system |
| JP2003166065A (en) | 2001-11-30 | 2003-06-13 | Sekisui Chem Co Ltd | Discharge plasma processing equipment |
| JP2003188387A (en) | 2001-12-20 | 2003-07-04 | Sony Corp | Thin film transistor and method of manufacturing the same |
| KR100450564B1 (en) | 2001-12-20 | 2004-09-30 | 동부전자 주식회사 | Post treatment method for metal line of semiconductor device |
| US6939801B2 (en) | 2001-12-21 | 2005-09-06 | Applied Materials, Inc. | Selective deposition of a barrier layer on a dielectric material |
| US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
| US6848458B1 (en) | 2002-02-05 | 2005-02-01 | Novellus Systems, Inc. | Apparatus and methods for processing semiconductor substrates using supercritical fluids |
| US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
| US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
| US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
| US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US7910165B2 (en) | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
| US6657304B1 (en) | 2002-06-06 | 2003-12-02 | Advanced Micro Devices, Inc. | Conformal barrier liner in an integrated circuit interconnect |
| US7521089B2 (en) | 2002-06-13 | 2009-04-21 | Tokyo Electron Limited | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers |
| US6846380B2 (en) | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
| US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
| US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
| US20070212850A1 (en) | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| EP1556902A4 (en) | 2002-09-30 | 2009-07-29 | Miasole | APPARATUS AND METHOD FOR MANUFACTURING CON CURRENT FOR LARGE SCALE PRODUCTION OF THIN FILM SOLAR CELLS |
| JP2004127958A (en) | 2002-09-30 | 2004-04-22 | Kyoshin Engineering:Kk | Apparatus and method for performing high pressure anneal steam treatment |
| US20040060519A1 (en) | 2002-10-01 | 2004-04-01 | Seh America Inc. | Quartz to quartz seal using expanded PTFE gasket material |
| US6889508B2 (en) * | 2002-10-02 | 2005-05-10 | The Boc Group, Inc. | High pressure CO2 purification and supply system |
| US7270761B2 (en) | 2002-10-18 | 2007-09-18 | Appleid Materials, Inc | Fluorine free integrated process for etching aluminum including chamber dry clean |
| KR100480634B1 (en) | 2002-11-19 | 2005-03-31 | 삼성전자주식회사 | Method for fabricating a semiconductor device using nickel salicide process |
| US7027722B2 (en) | 2002-11-25 | 2006-04-11 | Koyo Thermo Systems Co., Ltd. | Electric heater for a semiconductor processing apparatus |
| US20040112409A1 (en) | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
| US6825115B1 (en) | 2003-01-14 | 2004-11-30 | Advanced Micro Devices, Inc. | Post silicide laser thermal annealing to avoid dopant deactivation |
| CN1757098B (en) | 2003-02-04 | 2010-08-11 | 应用材料有限公司 | Tuning the nitrogen profile of silicon oxynitride by ultra-low pressure rapid thermal annealing with ammonia |
| JP3956049B2 (en) | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | Method for forming tungsten film |
| US6809005B2 (en) | 2003-03-12 | 2004-10-26 | Infineon Technologies Ag | Method to fill deep trench structures with void-free polysilicon or silicon |
| US7079760B2 (en) | 2003-03-17 | 2006-07-18 | Tokyo Electron Limited | Processing system and method for thermally treating a substrate |
| US7086638B2 (en) | 2003-05-13 | 2006-08-08 | Applied Materials, Inc. | Methods and apparatus for sealing an opening of a processing chamber |
| US6867130B1 (en) | 2003-05-28 | 2005-03-15 | Advanced Micro Devices, Inc. | Enhanced silicidation of polysilicon gate electrodes |
| US6939794B2 (en) | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
| US7226512B2 (en) | 2003-06-18 | 2007-06-05 | Ekc Technology, Inc. | Load lock system for supercritical fluid cleaning |
| WO2005007283A2 (en) | 2003-07-08 | 2005-01-27 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
| KR100539274B1 (en) | 2003-07-15 | 2005-12-27 | 삼성전자주식회사 | Method for depositing cobalt layer |
| JP4417669B2 (en) | 2003-07-28 | 2010-02-17 | 日本エー・エス・エム株式会社 | Semiconductor processing apparatus and semiconductor wafer introduction method |
| JP4173781B2 (en) | 2003-08-13 | 2008-10-29 | 株式会社神戸製鋼所 | High pressure processing method |
| JP4443879B2 (en) | 2003-09-03 | 2010-03-31 | 株式会社協真エンジニアリング | High precision high pressure annealing equipment |
| US7029966B2 (en) | 2003-09-18 | 2006-04-18 | International Business Machines Corporation | Process options of forming silicided metal gates for advanced CMOS devices |
| US6867152B1 (en) | 2003-09-26 | 2005-03-15 | Novellus Systems, Inc. | Properties of a silica thin film produced by a rapid vapor deposition (RVD) process |
| US7109087B2 (en) | 2003-10-03 | 2006-09-19 | Applied Materials, Inc. | Absorber layer for DSA processing |
| US20070111519A1 (en) | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
| WO2005057663A2 (en) | 2003-12-10 | 2005-06-23 | Koninklijke Philips Electronics N.V. | Method and apparatus for fabrication of metal-oxide semiconductor integrated circuit devices |
| US20050136684A1 (en) | 2003-12-23 | 2005-06-23 | Applied Materials, Inc. | Gap-fill techniques |
| TW200527491A (en) | 2003-12-23 | 2005-08-16 | John C Schumacher | Exhaust conditioning system for semiconductor reactor |
| US7158221B2 (en) | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
| US20050250347A1 (en) | 2003-12-31 | 2005-11-10 | Bailey Christopher M | Method and apparatus for maintaining by-product volatility in deposition process |
| US20050205210A1 (en) | 2004-01-06 | 2005-09-22 | Devine Daniel J | Advanced multi-pressure workpiece processing |
| US7030468B2 (en) | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
| US7037816B2 (en) | 2004-01-23 | 2006-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for integration of HfO2 and RTCVD poly-silicon |
| US6897118B1 (en) | 2004-02-11 | 2005-05-24 | Chartered Semiconductor Manufacturing Ltd. | Method of multiple pulse laser annealing to activate ultra-shallow junctions |
| US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
| US7078302B2 (en) | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
| US7030016B2 (en) | 2004-03-30 | 2006-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post ECP multi-step anneal/H2 treatment to reduce film impurity |
| JP4393268B2 (en) | 2004-05-20 | 2010-01-06 | 株式会社神戸製鋼所 | Drying method of fine structure |
| US20050269291A1 (en) | 2004-06-04 | 2005-12-08 | Tokyo Electron Limited | Method of operating a processing system for treating a substrate |
| US7268065B2 (en) | 2004-06-18 | 2007-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of manufacturing metal-silicide features |
| US7521378B2 (en) | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
| TWI267183B (en) | 2004-09-29 | 2006-11-21 | Sanyo Electric Co | Semiconductor device and manufacturing method of the same |
| US7439168B2 (en) | 2004-10-12 | 2008-10-21 | Dcg Systems, Inc | Apparatus and method of forming silicide in a localized manner |
| US7491658B2 (en) | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
| US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US8585873B2 (en) | 2004-10-16 | 2013-11-19 | Aviza Technology Limited | Methods and apparatus for sputtering |
| US20060091493A1 (en) | 2004-11-01 | 2006-05-04 | Silicon-Based Technology Corp. | LOCOS Schottky barrier contact structure and its manufacturing method |
| JP2006135161A (en) | 2004-11-08 | 2006-05-25 | Canon Inc | Method and apparatus for forming insulating film |
| US7235472B2 (en) | 2004-11-12 | 2007-06-26 | Infineon Technologies Ag | Method of making fully silicided gate electrode |
| KR20070089197A (en) | 2004-11-22 | 2007-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Substrate Processing Equipment Using Batch Processing Chamber |
| US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
| US20060240187A1 (en) | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
| KR100697280B1 (en) | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | Pressure regulating method of semiconductor manufacturing equipment |
| EP1855794B1 (en) | 2005-02-22 | 2012-10-31 | Xactix, Inc. | Etching chamber with subchamber |
| US7759749B2 (en) | 2005-03-16 | 2010-07-20 | Nec Corporation | Metal material, and coating film and wiring for semiconductor integrated circuitry utilizing the metal material |
| US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
| WO2006101315A1 (en) | 2005-03-21 | 2006-09-28 | Pkl Co., Ltd. | Device and method for cleaning photomask |
| US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
| US7465650B2 (en) | 2005-04-14 | 2008-12-16 | Micron Technology, Inc. | Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry |
| US20120060868A1 (en) * | 2005-06-07 | 2012-03-15 | Donald Gray | Microscale fluid delivery system |
| WO2006131153A1 (en) | 2005-06-10 | 2006-12-14 | Obducat Ab | Pattern replication with intermediate stamp |
| JP4747693B2 (en) | 2005-06-28 | 2011-08-17 | 住友電気工業株式会社 | Method for forming resin body, method for forming structure for optical waveguide, and method for forming optical component |
| US7361231B2 (en) * | 2005-07-01 | 2008-04-22 | Ekc Technology, Inc. | System and method for mid-pressure dense phase gas and ultrasonic cleaning |
| WO2007018016A1 (en) | 2005-08-05 | 2007-02-15 | Hitachi Kokusai Electric Inc. | Substrate processing equipment, cooling gas supply nozzle and method for fabricating semiconductor device |
| US7534080B2 (en) | 2005-08-26 | 2009-05-19 | Ascentool, Inc. | Vacuum processing and transfer system |
| US7531404B2 (en) | 2005-08-30 | 2009-05-12 | Intel Corporation | Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer |
| US8926731B2 (en) | 2005-09-13 | 2015-01-06 | Rasirc | Methods and devices for producing high purity steam |
| KR100696178B1 (en) | 2005-09-13 | 2007-03-20 | 한국전자통신연구원 | Optical waveguide master and its manufacturing method |
| CN102109626A (en) | 2005-10-07 | 2011-06-29 | 株式会社尼康 | Minute optical element |
| US7794667B2 (en) | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
| US8460519B2 (en) | 2005-10-28 | 2013-06-11 | Applied Materials Inc. | Protective offset sputtering |
| US7387968B2 (en) | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
| US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| WO2007058604A1 (en) | 2005-11-18 | 2007-05-24 | Replisaurus Technologies Ab | Master electrode and method of forming the master electrode |
| US8306026B2 (en) | 2005-12-15 | 2012-11-06 | Toshiba America Research, Inc. | Last hop topology sensitive multicasting key management |
| US7432200B2 (en) | 2005-12-15 | 2008-10-07 | Intel Corporation | Filling narrow and high aspect ratio openings using electroless deposition |
| JP2007180310A (en) | 2005-12-28 | 2007-07-12 | Toshiba Corp | Semiconductor device |
| KR100684910B1 (en) | 2006-02-02 | 2007-02-22 | 삼성전자주식회사 | Plasma processing apparatus and its cleaning method |
| US20070187386A1 (en) | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
| US7578258B2 (en) | 2006-03-03 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for selective pre-coating of a plasma processing chamber |
| JP2007242791A (en) | 2006-03-07 | 2007-09-20 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
| US7520969B2 (en) | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
| TW200746268A (en) | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP4983087B2 (en) | 2006-04-27 | 2012-07-25 | 富士通セミコンダクター株式会社 | Film-forming method, semiconductor device manufacturing method, computer-readable recording medium, sputtering apparatus |
| US8062408B2 (en) | 2006-05-08 | 2011-11-22 | The Board Of Trustees Of The University Of Illinois | Integrated vacuum absorption steam cycle gas separation |
| US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
| US7650965B2 (en) | 2006-06-09 | 2010-01-26 | Emcon Technologies Llc | Exhaust system |
| US7709320B2 (en) | 2006-06-28 | 2010-05-04 | International Business Machines Corporation | Method of fabricating trench capacitors and memory cells using trench capacitors |
| JP2008073611A (en) | 2006-09-21 | 2008-04-03 | Dainippon Screen Mfg Co Ltd | High pressure treating device |
| US7494891B2 (en) | 2006-09-21 | 2009-02-24 | International Business Machines Corporation | Trench capacitor with void-free conductor fill |
| JP4814038B2 (en) | 2006-09-25 | 2011-11-09 | 株式会社日立国際電気 | Substrate processing apparatus and method for attaching / detaching reaction vessel |
| JP4976796B2 (en) | 2006-09-25 | 2012-07-18 | 株式会社東芝 | Semiconductor device |
| US7521379B2 (en) | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
| JP2008118118A (en) | 2006-10-13 | 2008-05-22 | Asahi Glass Co Ltd | Method for smoothing substrate surface for EUV mask blank, and EUV mask blank obtained by the method |
| TW200830034A (en) | 2006-10-13 | 2008-07-16 | Asahi Glass Co Ltd | Method of smoothing surface of substrate for EUV mask blank, and EUV mask blank obtained by the method |
| US7888273B1 (en) | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
| US7790587B2 (en) | 2006-11-07 | 2010-09-07 | Intel Corporation | Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby |
| JP2008153635A (en) | 2006-11-22 | 2008-07-03 | Toshiba Matsushita Display Technology Co Ltd | Method for manufacturing MOS semiconductor device |
| JP5200371B2 (en) | 2006-12-01 | 2013-06-05 | 東京エレクトロン株式会社 | Film forming method, semiconductor device, and storage medium |
| US20080132050A1 (en) | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| US20080169183A1 (en) | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| JP2008192642A (en) | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | Substrate processing equipment |
| US20080233404A1 (en) | 2007-03-22 | 2008-09-25 | 3M Innovative Properties Company | Microreplication tools and patterns using laser induced thermal embossing |
| JP5135856B2 (en) | 2007-03-31 | 2013-02-06 | 東京エレクトロン株式会社 | Trap device, exhaust system and treatment system using the same |
| US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
| DE102007017641A1 (en) | 2007-04-13 | 2008-10-16 | Infineon Technologies Ag | Curing of layers on the semiconductor module by means of electromagnetic fields |
| WO2008131531A1 (en) | 2007-04-30 | 2008-11-06 | Ifire Ip Corporation | Laminated thick film dielectric structure for thick film dielectric electroluminescent displays |
| WO2008147522A1 (en) | 2007-05-25 | 2008-12-04 | Applied Materials, Inc. | Methods and apparatus for assembling and operating electronic device manufacturing systems |
| US20080311711A1 (en) | 2007-06-13 | 2008-12-18 | Roland Hampp | Gapfill for metal contacts |
| US20090018688A1 (en) | 2007-06-15 | 2009-01-15 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
| KR101442238B1 (en) | 2007-07-26 | 2014-09-23 | 주식회사 풍산마이크로텍 | Method for manufacturing semiconductor device by high pressure oxygen heat treatment |
| US7645709B2 (en) | 2007-07-30 | 2010-01-12 | Applied Materials, Inc. | Methods for low temperature oxidation of a semiconductor device |
| US7763522B2 (en) | 2007-08-01 | 2010-07-27 | United Microelectronic Corp. | Method of high density plasma gap-filling with minimization of gas phase nucleation |
| US8648253B1 (en) | 2010-10-01 | 2014-02-11 | Ascent Solar Technologies, Inc. | Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers |
| US7951728B2 (en) | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
| US7884012B2 (en) | 2007-09-28 | 2011-02-08 | Tokyo Electron Limited | Void-free copper filling of recessed features for semiconductor devices |
| US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
| WO2009055750A1 (en) | 2007-10-26 | 2009-04-30 | Applied Materials, Inc. | Methods and apparatus for smart abatement using an improved fuel circuit |
| JP5299605B2 (en) | 2007-11-19 | 2013-09-25 | 日揮触媒化成株式会社 | Method for repairing damage of low dielectric constant silica-based coating and low dielectric constant silica-based coating repaired by the method |
| US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
| KR20090064279A (en) | 2007-12-14 | 2009-06-18 | 노벨러스 시스템즈, 인코포레이티드 | Protective layer for damage-free gap filling |
| US7776740B2 (en) | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| US7843063B2 (en) | 2008-02-14 | 2010-11-30 | International Business Machines Corporation | Microstructure modification in copper interconnect structure |
| US7964506B1 (en) | 2008-03-06 | 2011-06-21 | Novellus Systems, Inc. | Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
| JP4815464B2 (en) | 2008-03-31 | 2011-11-16 | 株式会社日立製作所 | Fine structure transfer stamper and fine structure transfer apparatus |
| JP2009262016A (en) * | 2008-04-23 | 2009-11-12 | Sharp Corp | Method of separating carbon dioxide and separating apparatus and washing apparatus |
| US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| TWI476836B (en) | 2008-05-02 | 2015-03-11 | 應用材料股份有限公司 | Non-radial temperature control system for rotating substrates |
| US8133793B2 (en) | 2008-05-16 | 2012-03-13 | Sandisk 3D Llc | Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
| US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
| US7655532B1 (en) | 2008-07-25 | 2010-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI film property using SOD post-treatment |
| JP2010056541A (en) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2010080949A (en) | 2008-08-29 | 2010-04-08 | Kisco Ltd | Copper film annealing method, annealed copper film, and device having copper wiring |
| US20100089315A1 (en) | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
| US8153533B2 (en) | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
| KR20100035000A (en) | 2008-09-25 | 2010-04-02 | 삼성전자주식회사 | Semiconductor device having isolation layer with isolation trench of different aspect ratio and isolation trench gap fill method of fabricating the same |
| KR20110084275A (en) | 2008-10-27 | 2011-07-21 | 어플라이드 머티어리얼스, 인코포레이티드 | Vapor Deposition Method of Ternary Compounds |
| US7891228B2 (en) | 2008-11-18 | 2011-02-22 | Mks Instruments, Inc. | Dual-mode mass flow verification and mass flow delivery system and method |
| US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| KR20100082170A (en) | 2009-01-08 | 2010-07-16 | 삼성전자주식회사 | Methods of forming a silicon oxide layer pattern and an isolation layer |
| JP2010168607A (en) | 2009-01-21 | 2010-08-05 | Institute Of National Colleges Of Technology Japan | Facing target type sputtering apparatus capable of controlling composition ratio |
| CN102308675B (en) | 2009-02-04 | 2016-01-13 | 应用材料公司 | For the ground connection return flow path of plasma process |
| KR101534678B1 (en) | 2009-02-12 | 2015-07-08 | 삼성전자주식회사 | A method of manufacturing a semiconductor device in which a tungsten contact plug is subjected to an RTA treatment in an oxygen atmosphere and a tungsten plug subjected to an RTO treatment is reduced in a hydrogen atmosphere |
| KR20110129392A (en) | 2009-02-15 | 2011-12-01 | 자콥 우드러프 | Solar cell absorbent layer formed from balanced precursor (s) |
| JP2010205854A (en) | 2009-03-02 | 2010-09-16 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device |
| JP4523661B1 (en) | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | Atomic layer deposition apparatus and thin film forming method |
| JP4564570B2 (en) | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | Atomic layer deposition equipment |
| US8435830B2 (en) | 2009-03-18 | 2013-05-07 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices |
| FR2944147B1 (en) | 2009-04-02 | 2011-09-23 | Saint Gobain | METHOD FOR MANUFACTURING TEXTURED EXTERNAL SURFACE STRUCTURE FOR ORGANIC ELECTROLUMINESCENT DIODE DEVICE AND STRUTURE WITH TEXTURED EXTERNAL SURFACE |
| KR101841236B1 (en) | 2009-04-03 | 2018-03-22 | 어플라이드 머티어리얼스, 인코포레이티드 | High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process |
| US20100297854A1 (en) | 2009-04-22 | 2010-11-25 | Applied Materials, Inc. | High throughput selective oxidation of silicon and polysilicon using plasma at room temperature |
| US20100304027A1 (en) | 2009-05-27 | 2010-12-02 | Applied Materials, Inc. | Substrate processing system and methods thereof |
| JP4415062B1 (en) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR |
| KR20110000960A (en) | 2009-06-29 | 2011-01-06 | 삼성전자주식회사 | Semiconductor chip, stack module, memory card and manufacturing method thereof |
| CN102473748B (en) | 2009-07-01 | 2014-08-20 | 三菱电机株式会社 | Thin film solar cell and manufacturing method thereof |
| JP5293459B2 (en) * | 2009-07-01 | 2013-09-18 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP2012197463A (en) | 2009-07-03 | 2012-10-18 | Canon Anelva Corp | Film deposition method |
| JP5412193B2 (en) * | 2009-07-07 | 2014-02-12 | 三菱重工業株式会社 | Turbo refrigerator |
| US20110011737A1 (en) | 2009-07-17 | 2011-01-20 | Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan | High-power pulse magnetron sputtering apparatus and surface treatment apparatus using the same |
| JP5568913B2 (en) | 2009-07-24 | 2014-08-13 | 株式会社ユーテック | PZT film manufacturing method and steam heating apparatus |
| US9548228B2 (en) | 2009-08-04 | 2017-01-17 | Lam Research Corporation | Void free tungsten fill in different sized features |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| KR20110023007A (en) | 2009-08-28 | 2011-03-08 | 삼성전자주식회사 | Thin film solar cell and manufacturing method thereof |
| JP2011066100A (en) | 2009-09-16 | 2011-03-31 | Bridgestone Corp | Photocurable transfer sheet and method for forming recessed and projected pattern using same |
| US8278224B1 (en) | 2009-09-24 | 2012-10-02 | Novellus Systems, Inc. | Flowable oxide deposition using rapid delivery of process gases |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| WO2011062043A1 (en) | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
| JP2013517616A (en) | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | Flowable dielectrics using oxide liners |
| SG182333A1 (en) | 2010-01-07 | 2012-08-30 | Applied Materials Inc | In-situ ozone cure for radical-component cvd |
| US8691687B2 (en) | 2010-01-07 | 2014-04-08 | International Business Machines Corporation | Superfilled metal contact vias for semiconductor devices |
| US20110174363A1 (en) | 2010-01-21 | 2011-07-21 | Aqt Solar, Inc. | Control of Composition Profiles in Annealed CIGS Absorbers |
| US9500362B2 (en) * | 2010-01-21 | 2016-11-22 | Powerdyne, Inc. | Generating steam from carbonaceous material |
| US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
| US20110204518A1 (en) | 2010-02-23 | 2011-08-25 | Globalfoundries Inc. | Scalability with reduced contact resistance |
| CN102844848A (en) | 2010-03-05 | 2012-12-26 | 应用材料公司 | Conformal layers deposited by chemical vapor deposition of radical components |
| TW201133974A (en) | 2010-03-23 | 2011-10-01 | Nat Univ Tsing Hua | Method for improving the efficiency of a flexible organic solar cell |
| US9129945B2 (en) | 2010-03-24 | 2015-09-08 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
| US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
| KR101877377B1 (en) | 2010-04-23 | 2018-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Manufacturing method of semiconductor device |
| JP5697534B2 (en) | 2010-05-14 | 2015-04-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing transistor |
| KR101163711B1 (en) | 2010-06-15 | 2012-07-09 | 서울대학교산학협력단 | 1t dram device having two gates on recessed body and method of operating and fabricating the same |
| CN101871043B (en) | 2010-06-25 | 2012-07-18 | 东莞市康汇聚线材科技有限公司 | Annealing furnace steam generator and control method thereof |
| US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
| JP2012049446A (en) * | 2010-08-30 | 2012-03-08 | Toshiba Corp | Supercritical drying method and supercritical drying system |
| EP2426720A1 (en) | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Staggered thin film transistor and method of forming the same |
| TW201216331A (en) | 2010-10-05 | 2012-04-16 | Applied Materials Inc | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration |
| JP2012089744A (en) | 2010-10-21 | 2012-05-10 | Elpida Memory Inc | Manufacturing method of semiconductor device |
| KR101691804B1 (en) * | 2010-12-16 | 2017-01-10 | 삼성전자주식회사 | Substrate processing method and substrate processing system for performing the same |
| US20120153483A1 (en) | 2010-12-20 | 2012-06-21 | Akolkar Rohan N | Barrierless single-phase interconnect |
| JP5806827B2 (en) | 2011-03-18 | 2015-11-10 | 東京エレクトロン株式会社 | Gate valve apparatus, substrate processing apparatus and substrate processing method thereof |
| JP5823713B2 (en) * | 2011-03-24 | 2015-11-25 | 株式会社東芝 | Evaporator and cooling device |
| CN103502853A (en) | 2011-03-25 | 2014-01-08 | 李谞荣 | Lightwave circuit and method of manufacturing same |
| JP5450494B2 (en) | 2011-03-25 | 2014-03-26 | 株式会社東芝 | Supercritical drying method for semiconductor substrates |
| WO2012133583A1 (en) | 2011-03-30 | 2012-10-04 | 大日本印刷株式会社 | Supercritical drying device and supercritical drying method |
| US20120252210A1 (en) | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Method for modifying metal cap layers in semiconductor devices |
| US8524600B2 (en) | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
| US8637410B2 (en) | 2011-04-08 | 2014-01-28 | Applied Materials, Inc. | Method for metal deposition using hydrogen plasma |
| US9299581B2 (en) | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
| JP6085423B2 (en) | 2011-05-30 | 2017-02-22 | 株式会社東芝 | Substrate processing method, substrate processing apparatus, and storage medium |
| WO2012165377A1 (en) | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | Method for treating substrate, device for treating substrate and storage medium |
| US8435887B2 (en) | 2011-06-02 | 2013-05-07 | International Business Machines Corporation | Copper interconnect formation |
| US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
| GB201110117D0 (en) | 2011-06-16 | 2011-07-27 | Fujifilm Mfg Europe Bv | method and device for manufacturing a barrie layer on a flexible substrate |
| US10090179B2 (en) | 2011-06-28 | 2018-10-02 | Brooks Automation, Inc. | Semiconductor stocker systems and methods |
| JP5544666B2 (en) * | 2011-06-30 | 2014-07-09 | セメス株式会社 | Substrate processing equipment |
| WO2013008982A1 (en) | 2011-07-14 | 2013-01-17 | 엘티씨 (주) | Inorganic scattering film having high light extraction performance |
| KR101980590B1 (en) * | 2011-09-01 | 2019-05-23 | 세메스 주식회사 | Apparatus for treating substrate |
| US8546227B2 (en) | 2011-09-15 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-K metal gate device |
| US9368603B2 (en) | 2011-09-15 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-k metal gate device |
| US10023954B2 (en) | 2011-09-15 | 2018-07-17 | Applied Materials, Inc. | Slit valve apparatus, systems, and methods |
| CN103999198B (en) | 2011-11-01 | 2016-08-24 | 株式会社日立国际电气 | The manufacture method of semiconductor device, the manufacture device of semiconductor device and record medium |
| JP5712902B2 (en) | 2011-11-10 | 2015-05-07 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
| KR101305904B1 (en) | 2011-12-07 | 2013-09-09 | 주식회사 테스 | Method of manufacturing a semiconductor device with minute pattern |
| EP2788161A4 (en) | 2011-12-08 | 2015-07-15 | Inmold Biosystems As | Spin-on-glass assisted polishing of rough substrates |
| JP2013122493A (en) | 2011-12-09 | 2013-06-20 | Furukawa Electric Co Ltd:The | Optical branching element and optical branching circuit |
| JP2013154315A (en) | 2012-01-31 | 2013-08-15 | Ricoh Co Ltd | Thin film forming apparatus, thin film forming method, electro-mechanical transducer element, liquid ejecting head, and inkjet recording apparatus |
| KR102028779B1 (en) | 2012-02-13 | 2019-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for selective oxidation of a substrate |
| US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| JP5577365B2 (en) | 2012-03-15 | 2014-08-20 | コマツ産機株式会社 | Device for checking braking performance of press machine |
| US9330939B2 (en) | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
| US9303311B2 (en) | 2012-03-30 | 2016-04-05 | Applied Materials, Inc. | Substrate processing system with mechanically floating target assembly |
| US9647066B2 (en) | 2012-04-24 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy FinFET structure and method of making same |
| US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US9587880B2 (en) * | 2012-05-31 | 2017-03-07 | Semes Co., Ltd. | Apparatus and method for drying substrate |
| US20130337171A1 (en) | 2012-06-13 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | N2 purged o-ring for chamber in chamber ald system |
| KR101224520B1 (en) | 2012-06-27 | 2013-01-22 | (주)이노시티 | Apparatus for process chamber |
| KR20140003776A (en) | 2012-06-28 | 2014-01-10 | 주식회사 메카로닉스 | Preparation of a high resistivity zno thin film |
| US20150309073A1 (en) | 2012-07-13 | 2015-10-29 | Northwestern University | Multifunctional graphene coated scanning tips |
| JP2014019912A (en) | 2012-07-19 | 2014-02-03 | Tokyo Electron Ltd | Method of depositing tungsten film |
| CN104520975B (en) | 2012-07-30 | 2018-07-31 | 株式会社日立国际电气 | The manufacturing method of substrate processing device and semiconductor devices |
| US20140034632A1 (en) | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
| US8846448B2 (en) | 2012-08-10 | 2014-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Warpage control in a package-on-package structure |
| WO2014030371A1 (en) | 2012-08-24 | 2014-02-27 | 独立行政法人科学技術振興機構 | Semiconductor structure provided with aluminum-nitride-oxide film on top of germanium layer, and manufacturing method therefor |
| KR102002782B1 (en) | 2012-09-10 | 2019-07-23 | 삼성전자주식회사 | Method of manufacturing for Semiconductor device using expandable material |
| JP2014060256A (en) | 2012-09-18 | 2014-04-03 | Tokyo Electron Ltd | Processing system |
| JP6325229B2 (en) | 2012-10-17 | 2018-05-16 | 株式会社半導体エネルギー研究所 | Manufacturing method of oxide film |
| US9337318B2 (en) | 2012-10-26 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with dummy gate on non-recessed shallow trench isolation (STI) |
| US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| JP6060460B2 (en) | 2012-11-22 | 2017-01-18 | アーゼット・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Method for forming siliceous film and siliceous film formed by the same method |
| TWI689004B (en) * | 2012-11-26 | 2020-03-21 | 美商應用材料股份有限公司 | Stiction-free drying process with contaminant removal for high-aspect-ratio semiconductor device structures |
| US20150322286A1 (en) | 2012-11-27 | 2015-11-12 | The Regents Of The University Of California | Polymerized Metal-Organic Material for Printable Photonic Devices |
| US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
| JP2014141739A (en) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | Film deposition method of manganese metal film, processing system, production method of electronic device and electronic device |
| US9559181B2 (en) | 2013-11-26 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device with buried sige oxide |
| US20150357232A1 (en) | 2013-01-22 | 2015-12-10 | Ps4 Luxco S.A.R.L. | Method for manufacturing semiconductor device |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US20140216498A1 (en) | 2013-02-06 | 2014-08-07 | Kwangduk Douglas Lee | Methods of dry stripping boron-carbon films |
| CN104995333B (en) | 2013-02-19 | 2017-09-22 | 应用材料公司 | HDD Patterning Using Flowable CVD Films |
| KR101443792B1 (en) | 2013-02-20 | 2014-09-26 | 국제엘렉트릭코리아 주식회사 | Gas Phase Etcher Apparatus |
| KR20140104112A (en) | 2013-02-20 | 2014-08-28 | 주식회사 에스에프에이 | Chemical vapor deposition apparatus for flat display |
| KR20140106977A (en) | 2013-02-27 | 2014-09-04 | 삼성전자주식회사 | Metal oxide semiconductor Thin Film Transistors having high performance and methods of manufacturing the same |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US9680095B2 (en) | 2013-03-13 | 2017-06-13 | Macronix International Co., Ltd. | Resistive RAM and fabrication method |
| US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
| US9196768B2 (en) | 2013-03-15 | 2015-11-24 | Jehad A. Abushama | Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate |
| US10427303B2 (en) | 2013-03-15 | 2019-10-01 | Applied Materials, Inc. | Substrate deposition systems, robot transfer apparatus, and methods for electronic device manufacturing |
| TWI624897B (en) | 2013-03-15 | 2018-05-21 | Applied Materials, Inc. | Multi-position batch load locking device and system, and method including the same |
| US10224258B2 (en) | 2013-03-22 | 2019-03-05 | Applied Materials, Inc. | Method of curing thermoplastics with microwave energy |
| US9190321B2 (en) | 2013-04-08 | 2015-11-17 | International Business Machines Corporation | Self-forming embedded diffusion barriers |
| US9087903B2 (en) | 2013-04-26 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer layer omega gate |
| US9538586B2 (en) | 2013-04-26 | 2017-01-03 | Applied Materials, Inc. | Method and apparatus for microwave treatment of dielectric films |
| KR101287035B1 (en) | 2013-05-07 | 2013-07-17 | 호용종합건설주식회사 | Boiler system for pipe regeneration |
| JP6068633B2 (en) | 2013-05-31 | 2017-01-25 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and furnace mouth cover |
| JP6196481B2 (en) | 2013-06-24 | 2017-09-13 | 株式会社荏原製作所 | Exhaust gas treatment equipment |
| KR101542803B1 (en) | 2013-07-09 | 2015-08-07 | 주식회사 네오세미텍 | Vacuum chamber with purge apparatus of high temperature and high pressure injection type and cleaning method using it |
| EP2832899A1 (en) | 2013-08-02 | 2015-02-04 | The Swatch Group Research and Development Ltd. | Diamond coating and method for depositing such a coating |
| US9178103B2 (en) | 2013-08-09 | 2015-11-03 | Tsmc Solar Ltd. | Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities |
| US9748105B2 (en) | 2013-08-16 | 2017-08-29 | Applied Materials, Inc. | Tungsten deposition with tungsten hexafluoride (WF6) etchback |
| KR101825673B1 (en) | 2013-08-21 | 2018-02-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Variable frequency microwave(vfm) processes and applications in semiconductor thin film fabrications |
| JP6226648B2 (en) | 2013-09-04 | 2017-11-08 | 昭和電工株式会社 | Method for manufacturing SiC epitaxial wafer |
| US9224734B2 (en) | 2013-09-13 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS devices with reduced leakage and methods of forming the same |
| KR20150031889A (en) | 2013-09-17 | 2015-03-25 | 엘지이노텍 주식회사 | Solar cell |
| TWI633604B (en) | 2013-09-27 | 2018-08-21 | 美商應用材料股份有限公司 | Method for realizing seamless cobalt gap filling |
| JP6165577B2 (en) | 2013-09-30 | 2017-07-19 | Hoya株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
| US9396986B2 (en) | 2013-10-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming a trench structure |
| US9583655B2 (en) | 2013-10-08 | 2017-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making photovoltaic device having high quantum efficiency |
| JP6129712B2 (en) | 2013-10-24 | 2017-05-17 | 信越化学工業株式会社 | Superheated steam treatment equipment |
| JP6254823B2 (en) | 2013-11-01 | 2017-12-27 | Jx金属株式会社 | Nickel silicide sputtering target and manufacturing method thereof |
| JP6221710B2 (en) | 2013-12-10 | 2017-11-01 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
| KR102279659B1 (en) | 2013-12-22 | 2021-07-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Glass ceramic for ultraviolet lithography and method of manufacturing thereof |
| US9406547B2 (en) | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for trench isolation using flowable dielectric materials |
| CN103745978B (en) | 2014-01-03 | 2016-08-17 | 京东方科技集团股份有限公司 | Display device, array base palte and preparation method thereof |
| US9677172B2 (en) | 2014-01-21 | 2017-06-13 | Applied Materials, Inc. | Methods for forming a cobalt-ruthenium liner layer for interconnect structures |
| CN105940280B (en) * | 2014-01-28 | 2019-07-16 | 弗诺尼克设备公司 | For mitigating the mechanism of the high heat-flux situation in thermosiphon evaporator or condenser |
| US9257527B2 (en) | 2014-02-14 | 2016-02-09 | International Business Machines Corporation | Nanowire transistor structures with merged source/drain regions using auxiliary pillars |
| US9818603B2 (en) | 2014-03-06 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| US9496145B2 (en) | 2014-03-19 | 2016-11-15 | Applied Materials, Inc. | Electrochemical plating methods |
| US10333017B2 (en) | 2014-03-21 | 2019-06-25 | Brookhaven Science Associates, Llc | Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells |
| US11183375B2 (en) | 2014-03-31 | 2021-11-23 | Applied Materials, Inc. | Deposition system with multi-cathode and method of manufacture thereof |
| KR101571715B1 (en) | 2014-04-23 | 2015-11-25 | 주식회사 풍산 | Method of forming spin on glass type insulation layer using high pressure annealing |
| US9984915B2 (en) | 2014-05-30 | 2018-05-29 | Infineon Technologies Ag | Semiconductor wafer and method for processing a semiconductor wafer |
| CN104047676A (en) | 2014-06-14 | 2014-09-17 | 马根昌 | Improved opposite impact silencer |
| KR102369142B1 (en) | 2014-06-16 | 2022-03-02 | 인텔 코포레이션 | Seam healing of metal interconnects |
| CN104089491B (en) | 2014-07-03 | 2015-11-04 | 肇庆宏旺金属实业有限公司 | The waste heat recycling system of annealing furnace |
| US9257314B1 (en) | 2014-07-31 | 2016-02-09 | Poongsan Corporation | Methods and apparatuses for deuterium recovery |
| US9695503B2 (en) | 2014-08-22 | 2017-07-04 | Applied Materials, Inc. | High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer |
| CN106688080A (en) | 2014-09-08 | 2017-05-17 | 三菱电机株式会社 | Semiconductor annealing apparatus |
| US9773865B2 (en) | 2014-09-22 | 2017-09-26 | International Business Machines Corporation | Self-forming spacers using oxidation |
| US9484461B2 (en) | 2014-09-29 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure with substrate isolation and un-doped channel |
| US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
| US9711414B2 (en) | 2014-10-21 | 2017-07-18 | Samsung Electronics Co., Ltd. | Strained stacked nanosheet FETS and/or quantum well stacked nanosheet |
| US20160118391A1 (en) | 2014-10-22 | 2016-04-28 | SanDisk Technologies, Inc. | Deuterium anneal of semiconductor channels in a three-dimensional memory structure |
| SG11201703196WA (en) | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing films |
| US10204764B2 (en) | 2014-10-28 | 2019-02-12 | Applied Materials, Inc. | Methods for forming a metal silicide interconnection nanowire structure |
| US9768060B2 (en) | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
| US9543141B2 (en) | 2014-12-09 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for curing flowable layer |
| US9780214B2 (en) | 2014-12-22 | 2017-10-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including Fin- FET and manufacturing method thereof |
| US9777378B2 (en) | 2015-01-07 | 2017-10-03 | Applied Materials, Inc. | Advanced process flow for high quality FCVD films |
| US9613859B2 (en) | 2015-01-09 | 2017-04-04 | Applied Materials, Inc. | Direct deposition of nickel silicide nanowire |
| TW201639063A (en) | 2015-01-22 | 2016-11-01 | 應用材料股份有限公司 | Batch heating and cooling chamber or load lock |
| US10145008B2 (en) | 2015-02-06 | 2018-12-04 | Versum Materials Us, Llc | Compositions and methods using same for carbon doped silicon containing films |
| US9859039B2 (en) | 2015-02-13 | 2018-01-02 | Alexander Otto | Multifilament superconducting wire with high resistance sleeves |
| US9711535B2 (en) | 2015-03-13 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming FinFET channel |
| US20160268127A1 (en) | 2015-03-13 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide and Manufacturing Method Thereof |
| US9590102B2 (en) | 2015-04-15 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2016172003A1 (en) | 2015-04-20 | 2016-10-27 | Applied Materials, Inc. | Buffer chamber wafer heating mechanism and supporting robot |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| US9685303B2 (en) | 2015-05-08 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for heating and processing a substrate |
| US10443934B2 (en) | 2015-05-08 | 2019-10-15 | Varian Semiconductor Equipment Associates, Inc. | Substrate handling and heating system |
| TWI791199B (en) | 2015-05-11 | 2023-02-01 | 美商應用材料股份有限公司 | Horizontal gate all around and finfet device isolation |
| CN106159038B (en) | 2015-05-15 | 2020-02-11 | 北京铂阳顶荣光伏科技有限公司 | Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for photovoltaic junction |
| KR101681190B1 (en) | 2015-05-15 | 2016-12-02 | 세메스 주식회사 | method and Apparatus for Processing Substrate |
| WO2016191621A1 (en) | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Methods and apparatus for a microwave batch curing process |
| JP6802191B2 (en) | 2015-06-05 | 2020-12-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Positioning and rotating device of susceptor, and method of use |
| CN107836034B (en) | 2015-06-05 | 2022-07-19 | 东京毅力科创株式会社 | Ruthenium metal feature fill for interconnects |
| US9633839B2 (en) | 2015-06-19 | 2017-04-25 | Applied Materials, Inc. | Methods for depositing dielectric films via physical vapor deposition processes |
| US9728430B2 (en) | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
| US20160379854A1 (en) | 2015-06-29 | 2016-12-29 | Varian Semiconductor Equipment Associates, Inc. | Vacuum Compatible LED Substrate Heater |
| US10170608B2 (en) | 2015-06-30 | 2019-01-01 | International Business Machines Corporation | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
| US9646850B2 (en) | 2015-07-06 | 2017-05-09 | Globalfoundries Inc. | High-pressure anneal |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10468238B2 (en) | 2015-08-21 | 2019-11-05 | Applied Materials, Inc. | Methods and apparatus for co-sputtering multiple targets |
| US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9484406B1 (en) | 2015-09-03 | 2016-11-01 | Applied Materials, Inc. | Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
| US9530737B1 (en) | 2015-09-28 | 2016-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9716142B2 (en) | 2015-10-12 | 2017-07-25 | International Business Machines Corporation | Stacked nanowires |
| US9755047B2 (en) | 2015-10-27 | 2017-09-05 | United Microelectronics Corp. | Semiconductor process and semiconductor device |
| US9484255B1 (en) | 2015-11-03 | 2016-11-01 | International Business Machines Corporation | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts |
| US9754840B2 (en) | 2015-11-16 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Horizontal gate-all-around device having wrapped-around source and drain |
| US9502307B1 (en) | 2015-11-20 | 2016-11-22 | International Business Machines Corporation | Forming a semiconductor structure for reduced negative bias temperature instability |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| KR102577628B1 (en) | 2016-01-05 | 2023-09-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Method for fabricating nanowires for horizontal gate all-around devices for semiconductor applications |
| US9805976B2 (en) | 2016-01-08 | 2017-10-31 | Applied Materials, Inc. | Co or Ni and Cu integration for small and large features in integrated circuits |
| US9570551B1 (en) | 2016-02-05 | 2017-02-14 | International Business Machines Corporation | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth |
| US9679810B1 (en) | 2016-02-11 | 2017-06-13 | Globalfoundries Inc. | Integrated circuit having improved electromigration performance and method of forming same |
| JP6240695B2 (en) | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and program |
| KR102358289B1 (en) | 2016-03-11 | 2022-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Composites and Transistors |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| US10049927B2 (en) | 2016-06-10 | 2018-08-14 | Applied Materials, Inc. | Seam-healing method upon supra-atmospheric process in diffusion promoting ambient |
| TWI680535B (en) | 2016-06-14 | 2019-12-21 | 美商應用材料股份有限公司 | Oxidative volumetric expansion of metals and metal containing compounds |
| US9933314B2 (en) | 2016-06-30 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
| US9876019B1 (en) | 2016-07-13 | 2018-01-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with programmable memory and methods for producing the same |
| US10020186B2 (en) | 2016-07-29 | 2018-07-10 | Applied Materials, Inc. | Silicon germanium selective oxidation process |
| US10115670B2 (en) | 2016-08-17 | 2018-10-30 | International Business Machines Corporation | Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer |
| US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
| US20180087418A1 (en) | 2016-09-22 | 2018-03-29 | Castrol Limited | Fluid Method and System |
| WO2018064292A1 (en) | 2016-09-30 | 2018-04-05 | Applied Materials, Inc. | Methods of forming self-aligned vias |
| US10249525B2 (en) | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
| US9741626B1 (en) | 2016-10-20 | 2017-08-22 | International Business Machines Corporation | Vertical transistor with uniform bottom spacer formed by selective oxidation |
| KR102582671B1 (en) | 2016-12-22 | 2023-09-25 | 삼성전자주식회사 | Semiconductor devices |
| US10570506B2 (en) | 2017-01-24 | 2020-02-25 | Applied Materials, Inc. | Method to improve film quality for PVD carbon with reactive gas and bias power |
| TWI809712B (en) | 2017-01-24 | 2023-07-21 | 美商應用材料股份有限公司 | Method of forming cobalt layer on substrate |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| CN110431661B (en) | 2017-03-31 | 2023-09-22 | 应用材料公司 | Two-step process for gap filling high aspect ratio trenches with amorphous silicon films |
| CN110476239B (en) | 2017-04-07 | 2023-10-13 | 应用材料公司 | Gap filling using reactive annealing |
| KR20190133276A (en) | 2017-04-21 | 2019-12-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Improved Electrode Assembly |
| JP7235678B2 (en) | 2017-05-01 | 2023-03-08 | アプライド マテリアルズ インコーポレイテッド | High pressure annealing chamber with vacuum isolation and pretreatment environment |
| KR20190138315A (en) | 2017-05-03 | 2019-12-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Integrated substrate temperature measurement on high temperature ceramic heaters |
| JP6918146B2 (en) | 2017-05-19 | 2021-08-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | A device that collects liquid and solid emissions and later reacts them into gaseous emissions. |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| WO2018222614A1 (en) | 2017-06-02 | 2018-12-06 | Applied Materials, Inc. | Quality improvement of films deposited on a substrate |
| KR102574914B1 (en) | 2017-06-02 | 2023-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Dry Stripping of Boron Carbide Hardmasks |
| US10388533B2 (en) | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| US10234630B2 (en) | 2017-07-12 | 2019-03-19 | Applied Materials, Inc. | Method for creating a high refractive index wave guide |
| US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
| US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| US10096516B1 (en) | 2017-08-18 | 2018-10-09 | Applied Materials, Inc. | Method of forming a barrier layer for through via applications |
| JP6947914B2 (en) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Annealing chamber under high pressure and high temperature |
| US10643867B2 (en) * | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| KR102585074B1 (en) | 2017-11-11 | 2023-10-04 | 마이크로머티어리얼즈 엘엘씨 | Gas delivery system for high pressure processing chamber |
| SG11202003438QA (en) | 2017-11-16 | 2020-05-28 | Applied Materials Inc | High pressure steam anneal processing apparatus |
| JP2021503714A (en) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Capacitor system for high pressure processing system |
| JP7299898B2 (en) | 2018-01-24 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | Seam repair using high pressure annealing |
| WO2019164636A1 (en) | 2018-02-22 | 2019-08-29 | Applied Materials, Inc. | Method for processing a mask substrate to enable better film quality |
| US11114333B2 (en) | 2018-02-22 | 2021-09-07 | Micromaterials, LLC | Method for depositing and reflow of a high quality etch resistant gapfill dielectric film |
| CN111902929B (en) | 2018-03-09 | 2025-09-19 | 应用材料公司 | High pressure annealing process for metal-containing materials |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10916433B2 (en) | 2018-04-06 | 2021-02-09 | Applied Materials, Inc. | Methods of forming metal silicide layers and metal silicide layers formed therefrom |
| WO2019204124A1 (en) | 2018-04-20 | 2019-10-24 | Applied Materials, Inc. | Ceramic wafer heater with integrated pressurized helium cooling |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US11434569B2 (en) | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
| US11499666B2 (en) | 2018-05-25 | 2022-11-15 | Applied Materials, Inc. | Precision dynamic leveling mechanism with long motion capability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10790183B2 (en) | 2018-06-05 | 2020-09-29 | Applied Materials, Inc. | Selective oxidation for 3D device isolation |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US20200035513A1 (en) | 2018-07-25 | 2020-01-30 | Applied Materials, Inc. | Processing apparatus |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP7179172B6 (en) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | Method for etching structures for semiconductor applications |
| US11101174B2 (en) | 2019-10-15 | 2021-08-24 | Applied Materials, Inc. | Gap fill deposition process |
| US11728449B2 (en) | 2019-12-03 | 2023-08-15 | Applied Materials, Inc. | Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiency |
-
2018
- 2018-11-07 JP JP2020526345A patent/JP2021503714A/en active Pending
- 2018-11-07 WO PCT/US2018/059676 patent/WO2019099255A2/en not_active Ceased
- 2018-11-07 CN CN201880074319.5A patent/CN111432920A/en active Pending
- 2018-11-07 KR KR1020207017412A patent/KR20200075892A/en not_active Withdrawn
- 2018-11-08 US US16/183,967 patent/US10685830B2/en active Active
- 2018-11-13 TW TW107140137A patent/TW201926509A/en unknown
-
2020
- 2020-03-26 US US16/830,420 patent/US11610773B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201926509A (en) | 2019-07-01 |
| US20200227254A1 (en) | 2020-07-16 |
| US11610773B2 (en) | 2023-03-21 |
| KR20200075892A (en) | 2020-06-26 |
| WO2019099255A3 (en) | 2019-07-11 |
| US10685830B2 (en) | 2020-06-16 |
| JP2021503714A (en) | 2021-02-12 |
| US20190157074A1 (en) | 2019-05-23 |
| CN111432920A (en) | 2020-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11610773B2 (en) | Condenser system for high pressure processing system | |
| US11110383B2 (en) | Gas abatement apparatus | |
| US11361978B2 (en) | Gas delivery module | |
| US20200035513A1 (en) | Processing apparatus | |
| KR101632252B1 (en) | Pure liquid production device | |
| CN112473322A (en) | Carbon dioxide recovery system and method for operating same | |
| JP2008290044A5 (en) | ||
| EP2165751A1 (en) | Membrane distillation pressure control system and method | |
| RU169870U1 (en) | Installation for the separation of high pressure gas mixtures | |
| CN110926241A (en) | Heat exchanger and method of using same | |
| US7290572B2 (en) | Method for purging a high purity manifold | |
| JP6958687B1 (en) | Membrane distillation equipment and its operation method | |
| JP2002147972A (en) | Steam heating device | |
| CN117912983A (en) | Semiconductor heat treatment equipment gas path system and semiconductor heat treatment equipment | |
| JP5047425B2 (en) | Steam heating device | |
| KR100553194B1 (en) | Low-pressure cvd apparatus and method of manufacturing a thin film | |
| RU168132U1 (en) | INSTALLATION OF A MEMBRANE SEPARATION OF HIGH PRESSURE GAS MIXTURES | |
| JP2023153042A5 (en) | ||
| JPS63295998A (en) | Oxygen concentration control apparatus for water supply system in power plant | |
| JP2006017356A (en) | Chemical charging quantity calculating method and plant operating method | |
| JP2013155944A (en) | Steam heat exchange system | |
| JPH0821604A (en) | Water heating system | |
| JPH07709A (en) | Deaerator | |
| JP2004113948A (en) | Vacuum evaporation type distillation apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ENP | Entry into the national phase |
Ref document number: 2020526345 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| ENP | Entry into the national phase |
Ref document number: 20207017412 Country of ref document: KR Kind code of ref document: A |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 18879231 Country of ref document: EP Kind code of ref document: A2 |