JP3684624B2 - Reaction gas supply device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a reaction gas supply device that prevents leakage of toxic reaction gas supplied from a reaction gas supply source to a gas reaction device.
[0002]
[Prior art]
A typical patterning process in the manufacturing process of a semiconductor device includes a fine patterning process. In this fine patterning process, for example, many vacuum apparatuses such as a chemical etching apparatus and a CVD apparatus are used. In these chemical etching apparatuses and CVD apparatuses, toxic gases such as chlorine gas and hydrogen bromide gas may be used in the process. A gas supply line for supplying a predetermined gas from a gas supply source to each of the gas reaction apparatuses is usually connected with a stainless steel pipe.
[0003]
A practical reactive gas supply apparatus in use is shown in FIG. The reaction gas supply device 1 includes a gas cylinder box 2 containing gas cylinders B1, B2, B3... Which are supply sources of a plurality of types of reaction gases including a toxic gas, and a reaction gas supply for adjusting the flow rate of each reaction gas. Is composed of a gas box 3 containing mass flow controllers MFC1, MFC2, MFC3... Including valves V1, V2, V3..., And the output side thereof is a gas reaction device 4 such as a chemical etching device or a CVD device. The required reaction gas is supplied to
[0004]
The gas reaction device 4 is equipped with a turbo molecular pump PM1 via a main valve V4. A rough pump PM2 is connected to the output side of the turbo molecular pump PM1 via a pipe P5 and a fore valve V5. Is connected to an exhaust gas processing device T1 through a pipe P6. The rough pump PM2 is connected to the gas reaction device 4 through a pipe P7 and a rough valve V6.
[0005]
The supply ports of the gas cylinders B1, B2, B3,... And the mass flow controllers MFC1, MFC2, MFC3,... Are connected by pipes P1, P2, P3,. The output side of each reaction gas supply valve V1, V2, V3... Connected to the output side of the controllers MFC1, MFC2, MFC3... Is connected through one common pipe P4 and the reaction gas supply valve V7. The gas reactor 4 is connected. Each of the pipes is made of stainless steel.
[0006]
When etching or deposition is performed on a semiconductor wafer, the rough reactor P2 and the turbo molecular pump P1 are sequentially operated in the gas reactor 4 to draw a required vacuum, and each gas cylinder is placed in the gas reactor 4 as described above. The reaction gas from B1, B2, B3... Is adjusted in flow rate by the mass flow controllers MFC1, MFC2, MFC3... And supplied to the gas reaction device 4 through the opened reaction gas supply valve V7 and the pipe P4. To do. In this way, etching or deposition can be performed on the surface of the semiconductor wafer.
[0007]
Incidentally, a metal seal having a structure as shown in FIG. 3 is usually used for the joint portion of each pipe.
That is, the structure of the joint portion 20 is formed with a bowl-shaped end plate 22 having a projection 21 formed on the end surface at the end portion of the metal pipe Pa, and a female screw 23 is cut at the inner periphery of the end portion. On the other hand, the end portion of the metal pipe Pb is formed on a bolt 27 having a male thread 25 cut on its outer peripheral surface and a projection 26 formed on its end surface. The metal pipes Pa and Pb are connected by inserting a gasket 29 having a gas outflow hole 28 in the central portion between the Pb and fastening the nut 24 to the bolt 27. It has a structure.
[0008]
[Problems to be solved by the invention]
This pipe connection structure is a seal structure that can obtain high purity and high vacuum of metal-metal contact, but there is a tightening allowance recommended for its function, and gas leakage due to insufficient tightening or excessive tightening occurs. there is a possibility.
The material of the metal-metal gasket 29 differs depending on the type of gas used, temperature, pressure, and the like. If the nut 24 is tightened too much, the gasket 29 is torn and the reaction gas leaks from it, and if an incorrect gasket is selected and used, the gas will be deformed and corroded by the flowed gas, resulting in corrosion. Gas leaks may occur.
An object of the present invention is to eliminate such drawbacks, and an object of the present invention is to obtain a reaction gas supply device that can ensure the safety of an operator even if a toxic gas leaks. It is.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, a reaction gas supply apparatus of the present invention stores a plurality of gas cylinders that are supply sources of a plurality of types of reaction gases including a toxic gas, a gas cylinder box provided with exhaust holes, and each reaction A plurality of mass flow controllers for adjusting the flow rate of gas are housed, a gas box provided with exhaust holes, a plurality of internal pipes connecting each supply port of each gas cylinder and each mass flow controller, and the gas cylinder box A first external pipe that seals the whole of the plurality of internal pipes between the gas box, a common internal pipe that is commonly connected to the output side of the mass flow controller and connected to a gas reaction device; wherein the second external pipe to seal the common internal pipes one between the gas reactor and the gas box, the gas cylinder volume Hex exhaust holes of the exhaust pipe connected to an exhaust hole of the gas box, an exhaust pump connected to the exhaust pipe, and exhaust gas treatment device connected to said exhaust pump, said gas cylinder box and A plurality of gas detectors installed in the exhaust pipe in the vicinity of the gas box and in front of the exhaust pump .
[0010]
Therefore, according to the present invention, even if toxic gas leaks from the internal pipe, it can be immediately discharged through the external pipe to, for example, the exhaust gas treatment device, so that an accident can be prevented.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Next, the reaction gas supply apparatus of the present invention will be described with reference to FIG.
FIG. 1 is a schematic view of a reaction gas supply apparatus of the present invention.
In addition, the same code | symbol is attached | subjected and demonstrated to the component same as the structure of the reaction gas supply apparatus of a prior art.
[0012]
The reactive gas supply apparatus 1A of the present invention accommodates gas cylinders B1, B2, B3... That are supply sources of a plurality of types of reactive gases including toxic gases, and includes gas cylinder boxes 2 provided with exhaust holes 2a, The mass flow controllers MFC1, MFC2, MFC3... Including the reaction gas supply valves V1, V2, V3... For adjusting the flow rate of the reaction gas are housed, and the gas box 3 is provided with an exhaust hole 3a. This is almost the same as the reaction gas supply device 1 of the prior art. The output side supplies a required reaction gas to a gas reaction apparatus 4 such as a chemical etching apparatus or a CVD apparatus.
[0013]
The gas reaction apparatus 4 is also equipped with a turbo molecular pump PM1 via a main valve V4 as in the prior art, and a rough pump PM2 is connected to the output side of the turbo molecular pump PM1 via a pipe P5 and a fore valve V5. However, an exhaust gas processing device T1 is connected to the output side of the rough pump PM2 via a pipe P6. The rough pump PM2 is connected to the gas reaction device 4 through a pipe P7 and a rough valve V6.
[0014]
The supply ports of the gas cylinders B1, B2, B3... And the mass flow controllers MFC1, MFC2, MFC3... Are connected by internal pipes Pi1, Pi2, Pi3. The pipes Pi1, Pi2, Pi3,... Were entirely composed of a double pipe covered with an external pipe Po1 over the entire length. One end of the external pipe Po1 is attached to the opening 2b so as to seal the entire periphery of the opening 2b of the gas cylinder box 2, and the other end is sealed to the entire periphery of the opening 3b of the gas box 3. , Is attached to the opening 3b.
[0015]
Also, the reaction gas supply valves V1, V2, V3,... Connected to the output sides of the mass flow controllers MFC1, MFC2, MFC3,... Have one common internal pipe Pi4 and reaction gas supply valve. It is connected to the gas reactor 4 via V7. And this internal pipe Pi4 whole was comprised by the double piping covered with the external pipe Po2 over the full length. One end of the external pipe Po2 is attached to the opening 3c so as to seal the entire periphery of the opening 3c of the gas box 3, and the other end is sealed to the entire periphery of the gas supply port 4a of the gas reaction device 4. As shown, it is mounted in the opening 4a.
Each of the pipes is made of stainless steel.
[0016]
Furthermore, in the reactive gas supply apparatus 1A of the present invention, a pipe P8 is connected to the exhaust hole 2a of the gas cylinder box 2 and the exhaust hole 3a of the gas box 3, and the rough pump PM3 and the exhaust gas processing apparatus are connected to the ends of the pipe P8. T2 is connected. Further, a gas detector D1 is installed in the vicinity of the exhaust hole 2a of the gas cylinder box 2, and is connected to the pipe P8 through the pipe P9. A gas detector D2 is installed in the vicinity of the exhaust hole 3a of the gas box 3, and is connected to the pipe P8 via the pipe P10. Furthermore, the gas detector D3 is installed in the vicinity of the rough pump PM3, and is connected to the pipe P8 via the pipe P11. A gas detector D4 is installed in the vicinity of the gas reaction apparatus 4.
[0017]
When etching or deposition is performed on a semiconductor wafer, the rough reactor P2 and the turbo molecular pump P1 are sequentially operated in the gas reactor 4 to draw a required vacuum, and each gas cylinder is placed in the gas reactor 4 as described above. The reaction gas from B1, B2, B3... Is adjusted in flow rate by the mass flow controllers MFC1, MFC2, MFC3... And supplied to the gas reaction device 4 through the opened reaction gas supply valve V7 and the pipe P4. To do. The reaction gas in the gas reaction device 4 is sucked and exhausted by the turbo molecular pump P1, passes through the fore valve V5, and is exhausted to the exhaust gas processing device T1. In this way, the surface of the semiconductor wafer can be etched or deposited as in the prior art.
[0018]
During this gas reaction, the reactive gas supply device 1A of the present invention operates the rough pump PM3 and the exhaust gas processing device T2, and always exhausts the gas in the gas cylinder box 2, the gas box 3, and the external pipes Po1, Po2, The leakage of the reaction gas is always checked by the gas detectors D1, D2, D3, and D4.
When a gas leak occurs, one of the gas detectors operates to close the reaction gas supply valves V1, V2, V3,. The leaked reaction gas passes through the space between the internal pipes Pi1, Pi2, Pi3... And Pi4 and the external pipes Po1 and Po2, and is drawn by the rough pump PM3 to be exhausted to the exhaust gas processing device T2.
[0019]
【The invention's effect】
As described above, according to the reaction gas supply device of the present invention, even if toxic gas leaks from the internal pipe, the exhaust gas processing device is immediately exhausted through the external pipe by the above-described configuration and operation. Therefore, the toxic gas is safely exhausted without flowing out to the workplace, and the gas detector quickly detects the gas leak, so that the safety of the worker can be ensured and an accident can be prevented.
[Brief description of the drawings]
FIG. 1 is a schematic view of a reaction gas supply device of the present invention.
FIG. 2 is a schematic view of a conventional reactive gas supply device.
FIG. 3 is a cross-sectional view of the structure of a joint portion of a pipe used in a reaction gas supply device according to the prior art.
[Explanation of symbols]
1A Reaction gas supply device 2 Gas cylinder box 2a Exhaust hole 2b Open 3 Gas box 3a Exhaust hole 3b Open 3c Exhaust port 4 Gas reactor B1 Gas cylinder B2 Gas cylinder B3 Gas cylinder Pi1 Internal pipe Pi2 Internal pipe Pi3 Internal pipe Pi4 Internal pipe Po1 External pipe Po2 External pipe MFC1 Mass flow controller MFC2 Mass flow controller MFC3 Mass flow controller V1 Reaction gas supply valve V2 Reaction gas supply valve V3 Reaction gas supply valve V4 Reaction valve supply valve PM1 Turbo molecular pump PM2 Rough pump PM3 Rough pump T1 Exhaust gas treatment device T2 Exhaust gas Processing device D1 Gas detector D2 Gas detector D3 Gas detector D4 Gas detector

Claims (1)

A plurality of gas cylinders which are a supply source of a plurality of types of reactive gases including toxic gas, and a gas cylinder box provided with an exhaust hole;
Contains a plurality of mass flow controllers that adjust the flow rate of each reaction gas, a gas box provided with exhaust holes,
A plurality of internal pipes connecting each supply port of each gas cylinder and each mass flow controller;
A first outer pipe that seals the entire plurality of inner pipes between the gas cylinder box and the gas box;
A common internal pipe connected to the output side of the mass flow controller and connected to the gas reactor;
A second outer pipe sealing the one common inner pipe between the gas box and the gas reactor;
An exhaust pipe connected to the exhaust hole of the gas cylinder box and the exhaust hole of the gas box;
An exhaust pump connected to the exhaust pipe;
An exhaust gas treatment device connected to the exhaust pump;
A reaction gas supply device comprising: the gas cylinder box; a plurality of gas detectors installed in the vicinity of the gas box; and the exhaust pipe before the exhaust pump .

Images