JP2007242791A - Substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the outflow of a treatment gas from a suction port of a treatment gas housing. <P>SOLUTION: The substrate treatment apparatus comprises a first treatment gas supply passage for supplying the treatment gas for treating the substrate into a treatment chamber, treatment gas supply flow rate controller for controlling the supply flow rate of the treatment gas flowing into the first treatment gas supply passage, a first connection for connecting the first treatment gas supply passage and the treatment gas supply flow rate controller, a second treatment gas supply passage for supplying the treatment gas into the treatment gas supply flow rate controller, and a second connection for connecting the treatment gas supply flow rate controller and the second treatment gas supply passage. The first connection, the treatment gas supply flow rate controller, and the second connection are stored in the treatment gas housing. The treatment gas housing is equipped with the suction port 84 for sucking the atmosphere outside the treatment gas housing into the treatment gas housing, and an exhaust port 81a for exhausting the atmosphere inside treatment gas housing, together with the atmosphere outside the treatment gas housing sucked from the suction port 84. Between the suction port 84 and the second connection, there is provided a shielding means for preventing the treatment gas that has leaked from the second connection from flowing toward the suction port 84. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus, and more particularly to an apparatus suitable for measures against gas leakage in a processing gas casing called a gas box.

In general, a substrate processing apparatus includes an apparatus main body that processes a substrate and a utility that supplies utility power (water, gas, power supply, etc.) necessary for the processing to the apparatus main body (see, for example, Patent Document 1). . This utility is provided with a processing gas casing called a gas box for supplying a film forming gas to the apparatus main body.
Conventionally, in order to prevent the gas leaked inside the gas box from flowing out of the gas box, air is always taken into the gas box from the suction port, and the leaked gas is exhausted from the exhaust port together with the air.
JP 2002-280317 A

As described above, in the prior art, together with the air taken in from the suction port, the gas leaked in the processing gas casing is exhausted from the exhaust port, so that the gas does not flow out from places other than the exhaust port. In the case where the ejection pressure of the leaked gas is higher than the pressure of the atmosphere flowing in from the suction port, it is considered that there is a possibility that the leakage gas flows out of the processing gas casing from the suction port.
An object of the present invention is to prevent the processing gas from flowing out from the suction port of the processing gas housing even when the leakage gas ejection pressure is higher than the pressure of the atmosphere flowing in from the suction port. An object of the present invention is to provide a possible substrate processing apparatus.

  According to a first aspect of the present invention, there is provided a processing chamber for processing a substrate, a first processing gas supply path for supplying a processing gas for processing the substrate to the processing chamber, and a processing gas flowing into the first processing gas supply path. A process gas supply flow rate control unit for controlling the supply flow rate of the gas, a first connection unit for connecting the first process gas supply path and the process gas supply flow rate control unit, and the process gas supply flow rate control unit to the process gas supply flow rate control unit. A second process gas supply path for supplying a process gas; a second connection for connecting the process gas supply flow rate control unit and the second process gas supply path; the first connection and the process gas; A processing gas housing that houses the supply flow rate control unit and the second connection portion; a suction port that is provided in the processing gas housing and sucks the atmosphere outside the processing gas housing into the processing gas housing; and the suction An atmosphere outside the processing gas casing sucked from the mouth; and And an exhaust port for exhausting the atmosphere in the processing gas casing, and between the suction port and the second connection portion, the processing gas leaking from the second connection portion is directed toward the suction port. A substrate processing apparatus is provided with shielding means for preventing flow.

  According to the first invention, when the processing gas leaks from the second connection portion at a pressure higher than the atmosphere outside the processing gas casing sucked from the suction port, the leakage gas tends to flow to the suction port. Since the shielding means is provided, the shielding means obstructs the flow out of the processing gas casing from the suction port. The leaked gas flows in the processing gas casing together with the atmosphere outside the processing gas casing sucked into the processing gas casing from the suction port, and is exhausted to the outside from the exhaust port. Therefore, even if the processing gas leaks from the second connection portion, it is possible to reliably prevent the leakage gas from flowing out from the processing gas casing.

  According to a second aspect of the present invention, there is provided a processing chamber for processing a substrate, a first processing gas supply path for supplying a processing gas for processing the substrate to the processing chamber, and a processing gas flowing into the first processing gas supply path. A process gas supply flow rate control unit for controlling the supply flow rate of the gas, a first connection unit for connecting the first process gas supply path and the process gas supply flow rate control unit, and the process gas supply flow rate control unit to the process gas supply flow rate control unit. A second process gas supply path for supplying a process gas; a second connection for connecting the process gas supply flow rate control unit and the second process gas supply path; the first connection and the process gas; A processing gas housing that houses the supply flow rate control unit and the second connection portion; a suction port that is provided in the processing gas housing and sucks the atmosphere outside the processing gas housing into the processing gas housing; and the suction An atmosphere outside the processing gas casing sucked from the mouth; and An exhaust port for exhausting the atmosphere in the processing gas casing, wherein the first connection portion is disposed closer to the exhaust port than the second connection portion, and the second connection portion is disposed in the first connection portion. It is arrange | positioned near the said suction inlet from 1 connection part, The process gas which leaks from the said 2nd connection part flows toward the said suction opening between the said suction inlet and the said 2nd connection part. A first shielding means is provided to prevent the processing gas leaking from the second connection portion from bypassing the first shielding means between the suction port and the exhaust port. A substrate processing apparatus comprising a second shielding means for preventing outflow.

  According to the second invention, when the processing gas leaks from the second connection portion at a pressure higher than the atmosphere outside the processing gas casing sucked from the suction port, the leakage gas tends to flow to the suction port. Since the first shielding means is provided, the first shielding means obstructs the flow out of the processing gas casing from the suction port. Further, even if the leaked processing gas bypasses the first shielding means and flows out of the suction port, the second shielding means is provided, so that the processing gas is blocked by the second shielding means and processed from the suction port. Outflow to the outside of the gas casing becomes difficult. Leakage gas that becomes difficult to flow out from the suction port flows through the processing gas casing together with the atmosphere outside the processing gas casing that is sucked into the processing gas casing from the suction port, and is exhausted from the exhaust port to the outside. Therefore, even if the processing gas leaks from the second connection portion, the leakage gas can be more reliably prevented from flowing out from the processing gas casing.

  According to a third aspect of the present invention, there is provided a processing chamber for processing a substrate, a first processing gas supply path for supplying a processing gas for processing the substrate to the processing chamber, and a processing gas flowing into the first processing gas supply path. A process gas supply flow rate control unit for controlling the supply flow rate of the gas, a first connection unit for connecting the first process gas supply path and the process gas supply flow rate control unit, and the process gas supply flow rate control unit to the process gas supply flow rate control unit. A second process gas supply path for supplying a process gas; a second connection for connecting the process gas supply flow rate control unit and the second process gas supply path; the first connection and the process gas; A processing gas housing that houses the supply flow rate control unit and the second connection portion; a suction port that is provided in the processing gas housing and sucks the atmosphere outside the processing gas housing into the processing gas housing; and the suction An atmosphere outside the processing gas casing sucked from the mouth; and An exhaust port for exhausting the atmosphere inside the processing gas casing, and after changing the direction of the flow of the atmosphere outside the casing sucked from the suction port in a direction opposite to the exhaust port, the exhaust The substrate processing apparatus is characterized in that guidance means for guiding the atmosphere toward the mouth is provided.

  According to the third invention, when the processing gas leaks from the second connection portion at a pressure higher than the atmosphere outside the processing gas casing sucked from the suction port, the leakage gas tends to flow to the suction port. Since the guiding means is provided, the leakage gas cannot flow to the suction port against the flow of the atmosphere changed in direction by the guiding means, and the leaked gas flows inside the processing gas casing together with the guided atmosphere. It circulates and is exhausted from the exhaust port to the outside. Therefore, even if the processing gas leaks from the second connection portion, the leakage gas can be more reliably prevented from flowing out from the processing gas casing.

  According to the present invention, it is possible to reliably prevent the processing gas from flowing out from the suction port of the processing gas casing even when the ejection pressure of the leaking gas is higher than the pressure of the atmosphere flowing from the suction port. be able to.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 4 is a schematic configuration diagram of a vertical processing furnace 202 constituting a part of a substrate processing apparatus preferably used in the embodiment of the present invention, and is shown as a vertical sectional view.

  As shown in FIG. 4, the processing furnace 202 includes a heater 206 as a heating mechanism. The heater 206 has a cylindrical shape and is vertically installed by being supported by a heater base 251 as a holding plate.

  A process tube 203 as a reaction tube is disposed inside the heater 206 concentrically with the heater 206. The process tube 203 includes an inner tube 204 as an internal reaction tube and an outer tube 205 as an external reaction tube provided on the outer side thereof. The inner tube 204 is made of a heat resistant material such as quartz (SiO 2) or silicon carbide (SiC), and is formed in a cylindrical shape having an upper end and a lower end opened. A processing chamber 201 is formed in a cylindrical hollow portion of the inner tube 204, and is configured so that wafers 200 as substrates can be accommodated in a state of being aligned in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later. The outer tube 205 is made of a heat-resistant material such as quartz or silicon carbide, and is formed in a cylindrical shape having an inner diameter larger than the outer diameter of the inner tube 204 and closed at the upper end and opened at the lower end. It is provided in the shape.

  A manifold 209 is disposed below the outer tube 205 concentrically with the outer tube 205. The manifold 209 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 209 is engaged with the inner tube 204 and the outer tube 205, and is provided so as to support them. An O-ring 220a as a seal member is provided between the manifold 209 and the outer tube 205. By supporting the manifold 209 on the heater base 251, the process tube 203 is installed vertically. A reaction vessel is formed by the process tube 203 and the manifold 209.

  A nozzle 230 as a gas introduction unit is connected to a seal cap 219 described later so as to communicate with the inside of the processing chamber 201, and a gas supply pipe 232 is connected to the nozzle 230. A processing gas supply source and an inert gas supply source (not shown) are connected to an upstream side of the gas supply pipe 232 opposite to the connection side with the nozzle 230 via an MFC (mass flow controller) 241 as a gas flow rate controller. Has been. A gas flow rate control unit 235 is electrically connected to the MFC 241 and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

  The manifold 209 is provided with an exhaust pipe 231 that exhausts the atmosphere in the processing chamber 201. The exhaust pipe 231 is disposed at the lower end portion of the cylindrical space 250 formed by the gap between the inner tube 204 and the outer tube 205 and communicates with the cylindrical space 250. A vacuum exhaust device 246 such as a vacuum pump is connected to the downstream side of the exhaust pipe 231 opposite to the connection side with the manifold 209 via a pressure sensor 245 and a pressure adjustment device 242 as a pressure detector. The chamber 201 is configured to be evacuated so that the pressure in the chamber 201 becomes a predetermined pressure (degree of vacuum). A pressure control unit 236 is electrically connected to the pressure adjustment device 242 and the pressure sensor 245, and the pressure control unit 236 is installed in the processing chamber 201 by the pressure adjustment device 242 based on the pressure detected by the pressure sensor 245. Control is performed at a desired timing so that the pressure becomes a desired pressure.

  Below the manifold 209, a seal cap 219 is provided as a furnace port lid that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is brought into contact with the lower end of the manifold 209 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel and has a disk shape. On the upper surface of the seal cap 219, an O-ring 220b is provided as a seal member that contacts the lower end of the manifold 209. A rotation mechanism 254 for rotating the boat is installed on the side of the seal cap 219 opposite to the processing chamber 201. A rotation shaft 255 of the rotation mechanism 254 passes through the seal cap 219 and is connected to a boat 217 described later, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be lifted vertically by a boat elevator 115 as a lifting mechanism vertically installed outside the process tube 203, and thereby the boat 217 is carried into and out of the processing chamber 201. Is possible. A drive control unit 237 is electrically connected to the rotation mechanism 254 and the boat elevator 115, and is configured to control at a desired timing so as to perform a desired operation.

  The boat 217 as a substrate holder is made of a heat-resistant material such as quartz or silicon carbide, and is configured to hold a plurality of wafers 200 in a multi-stage by aligning them in a horizontal posture with their centers aligned. ing. A plurality of heat insulating plates 216 as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide are arranged in a multi-stage in a horizontal posture at the lower part of the boat 217, and the heat from the heater 206 is arranged. Is difficult to be transmitted to the manifold 209 side.

  A temperature sensor 263 is installed in the process tube 203 as a temperature detector. A temperature control unit 238 is electrically connected to the heater 206 and the temperature sensor 263, and the temperature in the processing chamber 201 is adjusted by adjusting the power supply to the heater 206 based on the temperature information detected by the temperature sensor 263. Is controlled at a desired timing so as to have a desired temperature distribution.

  The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus. ing. These gas flow rate control unit 235, pressure control unit 236, drive control unit 237, temperature control unit 238, and main control unit 239 are configured as a controller 240.

  Next, a method of forming a thin film on the wafer 200 by the CVD method as one step of the semiconductor device manufacturing process using the processing furnace 202 having the above configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 240.

  When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), as shown in FIG. 4, the boat 217 holding the plurality of wafers 200 is lifted by the boat elevator 115 and processed in the processing chamber 201. Is loaded (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

  The processing chamber 201 is evacuated by a vacuum evacuation device 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the pressure adjusting device 242 is feedback-controlled based on the measured pressure. In addition, the inside of the processing chamber 201 is heated by the heater 206 so as to have a desired temperature. At this time, the power supply to the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 217 by the rotation mechanism 254.

  Next, the gas supplied from the processing gas supply source and controlled to have a desired flow rate by the MFC 241 is introduced into the processing chamber 201 from the nozzle 230 through the gas supply pipe 232. The introduced gas rises in the processing chamber 201, flows out from the upper end opening of the inner tube 204 into the cylindrical space 250, and is exhausted from the exhaust pipe 231. The gas comes into contact with the surface of the wafer 200 when passing through the processing chamber 201, and at this time, a thin film is deposited on the surface of the wafer 200 by a thermal CVD reaction.

  When a preset processing time has passed, an inert gas is supplied from an inert gas supply source, the inside of the processing chamber 201 is replaced with an inert gas, and the pressure in the processing chamber 201 is returned to normal pressure. .

  Thereafter, the seal cap 219 is lowered by the boat elevator 115, the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out of the process tube 203 from the lower end of the manifold 209 while being held by the boat 217. (Boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

FIG. 2 shows an overall configuration diagram of the substrate processing apparatus on which the above-described processing furnace 202 is mounted.
A substrate processing apparatus, for example, a vertical diffusion / CVD apparatus, has a rectangular parallelepiped shape that is long in the front-rear direction. The apparatus configuration includes an apparatus main body 50 that processes a wafer such as silicon to manufacture a semiconductor device such as an IC, and a utility 70 that supplies the necessary power (water, gas, power supply, etc.) necessary for the processing to the apparatus main body 50. It is divided. The apparatus main body 50 and the utility 70 are connected by two ducts 61 and 62 at the upper part thereof. An apparatus in which the apparatus main body 50 and the utility 70 are configured separately as described above is referred to as a separate vertical diffusion / CVD apparatus.

  This apparatus performs various processes through an operation unit when an operator operates the apparatus. However, when processing a wafer, a main operation unit (not shown) installed on the apparatus main body 50 side is used. In addition, when the maintenance of the apparatus main body 50 is performed, it is performed using a sub operation unit (not shown) set on the utility 70 side.

  In the description of FIG. 2, in the front-rear direction of the apparatus, the front where the panel surface is visible is referred to as the front, and the rear where the panel surface is not visible is referred to as the rear. As for the apparatus main body 50, the front side that is visible is referred to as the rear side, and the rear side that is not visible is referred to as the front side. As for the utility 70, the visible front side is referred to as the front surface, and the invisible surface facing the back surface of the apparatus main body 50 is referred to as the back surface.

  One apparatus main body 50 is comprised from three housing | casings provided in two steps up and down. A transfer case 51 is provided in the lower part, and a cassette shelf case 52 and a heater case 43 are provided side by side thereon.

  A cassette stage for loading and unloading cassettes is provided on the front surface 12 of the transfer case 51 and the cassette shelf case 52. The cassette stage is opened and closed by a front shutter. The front surface 12 is provided with the above-described main operation unit (not shown) for operating a mechanism for performing necessary processing.

  Inside the transfer housing 51, although not shown, a cassette shelf for mounting cassettes, a cassette loader for transporting cassettes, a wafer transfer machine for transferring wafers from the cassettes to the boat 217, and from the boats 217 to the cassettes. Provided. Further, a load lock chamber in which the boat can be taken in and out while keeping the vacuum, and a boat elevator 115 for loading / unloading the boat 217 to / from the vertical processing furnace 202 are provided. A maintenance door 55 is provided on the back surface of the transfer case 51 located below the heater case 53. The maintenance door 55 is provided with a monitoring window 56.

  The cassette shelf casing 52 is provided with an upper shelf among the cassette shelves described above. The heater casing 53 is provided with the above-described vertical processing furnace 202 having a processing chamber for processing wafers. A heater heat exhaust port 57 is provided on the front side of the heater housing 53. A heater terminal confirmation maintenance door 58 is provided on the back surface of the heater casing 53.

  The other utility 70 is composed of four housings provided in two stages on the top and bottom. In the lower part, a power box 71 for supplying power and a part 72 of the piping system valve box are arranged in parallel, and a gas box 73 as a processing gas casing and a part 74 of the piping system valve box are provided on them. Is provided. The piping system valve box includes a part 72 of the piping system valve box and a part 74 of the piping system valve box. On the back surface of the utility 70, the above-described sub operation unit (not shown) is provided.

  The gas box 73 described above has a rectangular parallelepiped shape, and is installed with the long side up and down. A maintenance door 80 is provided on the front surface of the gas box 73 so that a processing gas supply flow rate control unit (described later) stored therein can be maintained. In addition, an exhaust port 81a for exhausting exhaust gas and an exhaust duct 81 connected to the exhaust port 81a are provided on the upper portion of the gas box 73. Further, the gas box 73 includes a first pipe 82 as a first processing gas supply path for supplying a processing gas for processing the wafer 200 to a processing chamber in the processing furnace 202 via a processing gas supply flow rate controller. A second pipe 83 is provided as a second pipe for supplying the processing gas to the processing gas supply flow rate control unit.

  The first pipe 82 passes through one duct 61 that connects the apparatus main body 50 and the utility 70, and is connected to the processing furnace 202 in the heater housing 53. The second pipe 83 passes through the pipe system valve box 72 and is connected to a gas supply source (not shown).

As shown in FIG. 3, the gas box 73 is provided symmetrically when viewed from the front, and underneath the front panel 85 is a suction for sucking the atmosphere (for example, air) outside the gas box 73 into the gas box 73. A mouth 84 is provided. In addition, an exhaust port 81 a for exhausting the atmosphere in the gas box 73 and an exhaust duct 81 connected to the exhaust port 81 a are provided on the upper portion of the gas box 73.
The exhaust duct 81 is connected by a stainless steel flexible duct or the like, and exhaust gas is exhausted to a processing system exhaust gas path installed in a clean room other than the substrate processing apparatus.

FIG. 1 is a schematic longitudinal sectional view including the internal configuration of the gas box 73 described above.
The suction port 84 described above is provided below the front panel 85 of the gas box 73. An exhaust duct 81 connected to the exhaust port 81a and the exhaust port 81a described above exhausts the air a outside the gas box 73 sucked from the suction port 84 and the atmosphere c in the gas box 73 together at the upper part of the gas box 73. Is provided.

  The gas box 73 is provided with a first pipe 82 and a second pipe 83. The first pipe 82 is drawn out from the inside of the gas box 73 to the outside in order to supply a processing gas for processing the wafer to the processing chamber 201 (see FIG. 4). The second pipe 83 is drawn from the outside of the gas box 73 into the inside through the bottom in order to supply the processing gas to the processing gas supply flow rate control unit 90.

  A gas unit 98 connected between the first pipe 82 and the second pipe 83 is accommodated in the gas box 73. The gas unit 98 includes a base 91 leaning along the inner wall of the rear plate 86 facing the front panel 85 of the gas box 73, and a first pipe joint portion as a first connection portion attached on the base 91. 96, a processing gas supply flow rate control unit 90, and a second pipe joint unit 97 as a second connection unit.

  The first pipe joint unit 96 connects the first pipe 82 and the processing gas supply flow rate control unit 90. The second pipe joint part 97 connects the processing gas supply flow rate control part 90 and the second pipe 83. The first pipe joint portion 96 is disposed on the upper side of the gas box 73 near the exhaust port 81a than the second pipe joint portion 97, and the second pipe joint portion 97 is closer to the suction port 84 than the first pipe joint portion 96. It is arranged on the bottom side of the gas box 73.

The processing gas supply flow rate control unit 90 controls the supply flow rate of the processing gas b flowing into the first pipe 82. The processing gas supply flow rate control unit 90 is configured by connecting a flow rate controller (MFC) 92, an air valve 93, and a filter 94 in series from downstream to upstream.
The processing gas supply flow rate control unit 90 is not limited to providing a flow rate controller (MFC), an air valve, and a filter 94, and may be provided with a pressure gauge or a regulator, for example.

  Inside the suction port 84 provided below the front panel 85, a guiding means 100 serving as a gas leakage countermeasure buffer is provided in a form that partitions the space between the suction port 84 and the second pipe joint 97. Yes. The guiding means 100 changes the direction of the flow of the air a sucked from the lower suction port 84 to the bottom side opposite to the upper exhaust port 81a, and then entrains the leaked gas b ′. The air a is guided toward the upper exhaust port 81a.

  Specifically, the guiding means 100 includes a three-dimensional shielding plate 101 that covers the suction port 84 except for the vicinity of the lower portion of the suction port 84. The shielding plate 101 is formed in an inverted L-shaped cross section and includes a front shielding portion 102 that covers the front side of the suction port 84 and an upper shielding portion 103 that covers the upper side of the suction port 84. A gap 88 is formed between the front shielding part 102 and the bottom part 87 in the vicinity of the lower part of the suction port 84, and external air can be introduced into the gas box 73 from the gap 88.

  In the vertical diffusion / CVD apparatus as described above, the cassette is loaded into the cassette stage, and the wafer taken out from the cassette is loaded into the vertical processing furnace 202 through the transfer casing 51 to form a thin film. In order to form this thin film, power is supplied from the power box 71 to the apparatus main body 50. In addition, the necessary processing gas is supplied from the gas box 73 into the processing furnace 202 via the first piping 82 by the piping system valve box 72.

  Here, when the process gas is supplied from the second pipe 83 to the first pipe 82 via the process gas supply flow rate control unit 90, the process gas is processed by the first pipe joint part 96 or the second pipe joint part 97 in the gas box 73. Gas may leak. In particular, in the second pipe joint portion 97 in the second pipe 83 which is the gas supply path on the gas supply source side from the MFC 92 and the air valve 93, the processing gas from the gas supply source is also received when the MFC 92 and the air valve 93 are closed. The gas is more likely to leak than the second pipe joint portion 97 present in the second pipe 83 and located in the first pipe 82 on the processing furnace 202 side.

  When the processing gas leaks at the second pipe joint 97, the second pipe joint 97 is located in the vicinity of the suction port 84, unlike the first pipe joint 96 located on the exhaust port 81a side. In the case where the jet pressure of the leaked gas is higher than the pressure of the air flowing in from the suction port 84, the leak gas may flow out from the suction port 84. When the processing gas flows out from the suction port 84, unlike the exhaust port 81a, the suction port 84 is not connected to the duct and has a low installation location, which may cause damage to surrounding workers.

  In this regard, according to the present embodiment, when the processing gas leaks from the second pipe joint portion 97, the processing gas is ejected at a pressure higher than the pressure of the air flowing in from the suction port 84, and the suction port 84. Since the shielding plate 101 that covers the suction port 84 is provided even if it is about to flow into the inlet port, the leaked gas that is about to flow into the suction port 84 is blocked by the front shielding part 102, and from the suction port 84 to the outside of the gas box 73. Outflow becomes difficult. Further, even if the leaked processing gas bypasses the front shielding portion 102 upward and flows out from the suction port 84, the leaked processing gas is blocked by the upper shielding portion 103 formed integrally with the front shielding portion 102, and from the suction port 84. Outflow to the outside of the gas box 73 becomes difficult. Further, even if the leaked processing gas bypasses the front shield 102 downward and flows out of the suction port 84 through the gap 88, it resists the air flow induced by the shield plate 101 having an inverted L-shaped cross section. It becomes difficult to flow to the suction port 84. Therefore, even if the process gas leaks from the second pipe joint 97, the leaked gas flows along with the induced air through the gas box 73 and is exhausted from the exhaust port 81a to the outside. As a result, it is possible to more reliably prevent the leaked gas from flowing out from the suction port 84 of the gas box 73 while having a simple configuration in which only the shielding plate 101 is provided. In particular, there is a great merit when a processing gas that has a dangerous effect on the human body is used or when a processing gas having high explosiveness or flammability is used.

The inflow pressure of the air described above is, for example, 100 to 300 Pa, and the ejection pressure of the processing gas is 8 × 10 ³ to 1 × 10 ⁴ Pa.

  In the embodiment, the three-dimensional shielding plate 101 that completely covers the suction port 84 is used, but a two-dimensional shielding plate that partitions the space in a plane may be used. In that case, a planar shielding plate in which the front shielding portion 102 and the upper shielding portion 103 constituting the shielding plate 101 are separated may be used. For example, a first shielding plate is provided between the suction port 84 and the second piping joint portion 97 to prevent the processing gas leaking from the second piping joint portion 97 from flowing toward the suction port 84, and this first shielding. A second member that is separate from the plate and prevents the processing gas leaking from the second pipe joint portion 97 between the suction port 84 and the exhaust port 81a from bypassing the first shielding plate and flowing out from the suction port 84. A shielding plate may be provided.

  Alternatively, it is possible to simplify the shielding plate and to configure only the first shielding plate. For example, it is possible to configure only the first shielding plate that prevents the processing gas leaking from the second pipe joint portion 97 from flowing toward the suction port 84 between the suction port 84 and the second connection portion. is there. In this case, the 1st shielding board should just have the shielding function which covers the suction inlet 84 so that the suction inlet 84 cannot be seen from the 2nd piping joint part 97 at least.

  In the above-described embodiment, the separate vertical diffusion / CVD apparatus in which the apparatus main body 50 and the utility 70 are separated has been described. However, the present invention is a utility integrated type in which the apparatus main body and the utility are integrated. It can also be applied to a gas box of a diffusion / CVD apparatus.

It is a schematic longitudinal cross-sectional view of the gas box as a process gas housing | casing which concerns on embodiment of the substrate processing apparatus of this invention. 1 is a perspective view of a substrate processing apparatus according to an embodiment. It is explanatory drawing of the gas box which concerns on embodiment, (a) is a top view, (b) is a front (front) figure. It is a schematic longitudinal cross-sectional view of the vertical processing furnace which concerns on embodiment.

Explanation of symbols

82 1st piping (1st process gas supply path)
90 Process gas supply flow rate control part 96 1st piping joint part (1st connection part)
83 Second piping (second processing gas supply path)
97 2nd piping joint part (2nd connection part)
73 Gas box (Processing gas casing)
81 Exhaust duct 81a Exhaust port 84 Suction port 100 Guiding means 101 Shield plate b Processing gas b 'Leakage gas

Claims (1)

A processing chamber for processing the substrate;
A first processing gas supply path for supplying a processing gas for processing the substrate to the processing chamber;
A processing gas supply flow rate control unit for controlling a supply flow rate of the processing gas flowing into the first processing gas supply path;
A first connecting portion for connecting the first processing gas supply path and the processing gas supply flow rate control portion;
A second processing gas supply path for supplying the processing gas to the processing gas supply flow rate controller;
A second connection for connecting the processing gas supply flow rate control unit and a second processing gas supply path;
A processing gas housing that houses the first connection unit, the processing gas supply flow rate control unit, and the second connection unit;
A suction port that is provided in the processing gas casing and sucks the atmosphere outside the processing gas casing into the processing gas casing;
An exhaust port for exhausting the atmosphere inside the processing gas casing together with the atmosphere outside the processing gas casing sucked from the suction port;
With
A substrate processing apparatus, characterized in that a shielding means is provided between the suction port and the second connection portion to prevent a processing gas leaking from the second connection portion from flowing toward the suction port. .

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