JP2007243119A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To expand the versatility for banning the use of a valve so that the response is possible and to increase certainty of banning of the use, when there are some changes in substrate processing. <P>SOLUTION: A substrate processing apparatus comprises: a first control means having a recipe in which contents of substrate processing such as opening/closing of a valve, etc. accompanying supply and discharge of gas are described and a control calculation part for performing indication of execution of the recipe; and a second control means which controls a control parameter for executing the recipe according to the indication from the first control means. The first control means has a table in which the use of valve is prescribed corresponding to the recipe, and a determining means for determining consistency by comparing a prescribed content of the valve prescribed in the recipe and a prescribed content of the valve prescribed in the table. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus which is a process for manufacturing a semiconductor device and performs substrate processing such as thin film formation, impurity diffusion, annealing, and etching on a substrate.

  In the substrate processing step, which is one step of the semiconductor device manufacturing method, a silicon wafer, a glass substrate or the like is placed in a processing furnace, the processing furnace is sealed, and a processing gas is introduced while heating the substrate. Then, substrate processing such as thin film formation, impurity diffusion, annealing, and etching is performed. When the substrate processing is completed, the inside of the processing furnace is purged with an inert gas or the like. Thereafter, the processing furnace was opened and the processed substrate was taken out.

  When the processing gas is supplied together with the carrier gas and the processing furnace is purged, the processing gas supply is stopped, the exhaust in the processing furnace is exhausted, and then the purge gas is supplied into the processing furnace. Supply / discharge, supply / discharge of carrier gas, and supply / discharge of purge gas are performed by opening and closing valves provided in the respective pipe lines. The opening / closing timing of the valve and the opening / closing timing are determined in accordance with a recipe in which the substrate processing content is set.

  Conventionally, a recipe in which the processing content of a substrate (control parameters such as processing temperature, gas type, gas flow rate, processing pressure, etc.) is set and inputted in advance to the control device of the substrate processing apparatus, and the opening and closing of the valve is performed according to the normal recipe. The control device controls the opening and closing of the valve.

  Depending on the substrate processing contents, there are valves that should not be operated (operation prohibited valves). For safety reasons, the valve opening / closing state is restricted by hardware, or detailed conditions are set for each process. The controller software incorporates the open / close operation prohibition process.

  For this reason, if the opening and closing of the valve is constrained by hardware, it is necessary to modify the device every time there is a recipe change to execute different substrate processing. It was necessary to remodel.

  Further, when versatility is required so that various kinds of substrate processing can be performed, there is a problem that the certainty about prohibition of use of the valve is lowered.

  In view of such circumstances, the present invention increases the versatility of prohibiting the use of a valve and increases the certainty of prohibiting the use so that it is possible to cope with changes in substrate processing.

  The present invention includes a first control unit having a recipe in which the contents of substrate processing such as opening and closing of a valve associated with gas supply and discharge are described, and a control calculation unit that instructs execution of the recipe, and the first control unit. In order to execute the recipe in accordance with the instruction, a substrate processing apparatus having a second control means for controlling a control parameter, wherein the first control means defines a use of a valve corresponding to the recipe. And a substrate processing apparatus having a determination unit that compares the specified content of the valve specified in the recipe with the specified content of the valve specified in the table to determine consistency.

  According to the present invention, the first control means having a recipe in which the contents of substrate processing such as opening and closing of a valve accompanying gas supply and discharge are described, and a control arithmetic unit that gives an instruction to execute the recipe, and the first control In order to execute the recipe in accordance with an instruction from the means, the substrate processing apparatus includes a second control means for controlling a control parameter. The first control means defines the use of a valve corresponding to the recipe. And a determination means for comparing the specified content of the valve specified in the recipe with the specified content of the valve specified in the table to determine consistency, so that the recipe to be executed uses the wrong valve Therefore, it is possible to prevent erroneous substrate processing from being executed. If different recipes are to be executed, it can be dealt with by changing the contents of the table that regulates the use of the valve, so that excellent effects such as improved versatility are exhibited.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, a substrate processing apparatus according to the present invention will be described.

  The substrate processing apparatus performs a substrate processing process which is one of the manufacturing processes of a semiconductor device (IC). In the following description, a vertical substrate processing apparatus that includes a vertical furnace as an example of a substrate processing apparatus and performs oxidation processing, CVD film formation processing, diffusion processing, annealing processing, etc. on the substrate will be described.

  As shown in FIGS. 1 and 2, the substrate processing apparatus 1 includes a housing 2. A front maintenance port 4 serving as an opening provided for maintenance is opened at the front front portion of the front wall 3 of the housing 2, and the front maintenance port 4 is opened and closed by a front maintenance door 5.

  A pod loading / unloading port 6 is opened on the front wall 3 of the housing 2 so as to communicate between the inside and outside of the housing 2. The pod loading / unloading port 6 is opened by a front shutter (loading / unloading opening / closing mechanism) 7. A load port (substrate transfer container delivery table) 8 is installed on the front front side of the pod loading / unloading port 6. The load port 8 is configured to align the placed pod 9. ing.

  The pod 9 is a hermetically sealed substrate transfer container, and is loaded into the load port 8 by an in-process transfer apparatus (not shown) and unloaded from the load port 8.

  A rotary pod shelf (substrate transfer container storage shelf) 11 is installed at an upper portion of the housing 2 at a substantially central portion in the front-rear direction. The rotary pod shelf 11 includes a plurality of pods 9. It is configured to store.

  The rotary pod shelf 11 is a vertically-supported support column 12 that is intermittently rotated, and a plurality of shelf plates (substrate transfer container placement) that are radially supported by the support column 12 at the upper, middle, and lower positions. The shelf 13 is configured to store the pods 9 in a state where a plurality of pods 9 are placed.

  A pod opener (substrate transfer container lid opening / closing mechanism) 14 is provided below the rotary pod shelf 11. The pod opener 14 can mount the pod 9 and can open and close the lid of the pod 9. It has a configuration.

  A pod transfer device (container transfer device) 15 is installed between the load port 8 and the rotary pod shelf 11 and the pod opener 14, and the pod transfer device 15 holds the pod 9. The pod 9 can be moved between the load port 8, the rotary pod shelf 11, and the pod opener 14.

  A sub-housing 16 is provided over the rear end of the lower portion of the housing 2 at a substantially central portion in the front-rear direction. A pair of wafer loading / unloading ports (substrate loading / unloading ports) 19 for loading / unloading wafers (substrates) 18 into / from the sub-casing 16 are arranged on the front wall 17 of the sub-casing 16 vertically and vertically. The pod openers 14 are provided to the upper and lower wafer loading / unloading ports 19, 19, respectively.

  The pod opener 14 includes a mounting table 21 on which the pod 9 is mounted and an opening / closing mechanism 22 that opens and closes the lid of the pod 9. The pod opener 14 is configured to open and close the wafer entrance of the pod 9 by opening and closing the lid of the pod 9 placed on the mounting table 21 by the opening and closing mechanism 22.

  The sub casing 16 constitutes a transfer chamber 23 that is airtight from a space (pod transport space) in which the pod transport device 15 and the rotary pod shelf 11 are disposed. A wafer transfer mechanism (substrate transfer mechanism) 24 is installed in the front region of the transfer chamber 23, and the wafer transfer mechanism 24 has a required number of wafers (five in the drawing) on which wafers are to be mounted. A mounting plate 25 is provided, and the wafer mounting plate 25 can be moved in the horizontal direction, can be rotated in the horizontal direction, and can be moved up and down. The wafer transfer mechanism 24 is configured to load and unload wafers 18 with respect to a boat (substrate holder) 26.

  In the rear region of the transfer chamber 23, a standby unit 27 that accommodates and waits for the boat 26 is configured, and a vertical processing furnace 28 is provided above the standby unit 27. The lower end portion of the processing furnace 28 is a furnace port portion, and the furnace port portion is opened and closed by a furnace port shutter (furnace port opening / closing mechanism) 29.

  A boat elevator (substrate holder lifting mechanism) 31 for raising and lowering the boat 26 is installed between the right end of the housing 2 and the right end of the standby portion 27 of the sub-housing 16. Yes. A seal cap 33 as a lid is horizontally attached to the arm 32 connected to the elevator platform of the boat elevator 31, and the seal cap 33 supports the boat 26 vertically, and a lower end of the processing furnace 28. The part can be closed airtight.

  The boat 26 includes a plurality of holding members, and is configured to hold a plurality of (for example, about 50 to 125) wafers 18 in multiple stages in a horizontal posture with the centers thereof aligned.

  A clean unit 35 is disposed at a position facing the boat elevator 31 side, and the clean unit 35 is configured by a supply fan and a dustproof filter so as to supply a clean atmosphere or clean air 34 which is an inert gas. ing. Between the wafer transfer mechanism 24 and the clean unit 35, a notch alignment device (not shown) is installed as a substrate alignment device for aligning the circumferential position of the wafer.

  The clean air 34 blown out from the clean unit 35 is circulated through a notch aligner (not shown), the wafer transfer mechanism 24, and the boat 26, and is then sucked in by a duct (not shown), and the casing 2 The exhaust air is exhausted to the outside or circulated to the primary side (supply side) which is the suction side of the clean unit 35, and is again blown out into the transfer chamber 23 by the clean unit 35. Has been.

  Next, the operation of the processing apparatus of the present invention will be described.

  When the pod 9 is supplied to the load port 8, the pod loading / unloading port 6 is opened by the front shutter 7. The pod 9 on the load port 8 is carried into the housing 2 by the pod carrying device 15 through the pod loading / unloading port 6 and mounted on the designated shelf 13 of the rotary pod shelf 11. Placed. The pod 9 is temporarily stored in the rotary pod shelf 11, and is then transferred from the shelf plate 13 to one of the pod openers 14 by the pod transfer device 15 and transferred to the mounting table 21. Alternatively, it is transferred directly from the load port 8 to the mounting table 21.

  At this time, the wafer loading / unloading port 19 is closed by the opening / closing mechanism 22, and the clean air 34 is circulated and filled in the transfer chamber 23. For example, the transfer chamber 23 is filled with nitrogen gas as clean air 34, so that the oxygen concentration is set to 20 ppm or less, which is much lower than the oxygen concentration inside the housing 2 (atmosphere). .

  The opening side end surface of the pod 9 placed on the mounting table 21 is pressed against the opening edge of the wafer loading / unloading port 19 in the front wall 17 of the sub casing 16 and the lid is opened and closed. It is removed by the mechanism 22 and the wafer entrance is opened.

  When the pod 9 is opened by the pod opener 14, the wafer 18 is taken out from the pod 9 by the wafer transfer mechanism 24 and transferred to a notch aligning device (not shown). After aligning 18, the wafer transfer mechanism 24 loads the wafer 18 into the standby section 27 located behind the transfer chamber 23 and charges (charges) the boat 26.

  The wafer transfer mechanism 24 that has transferred the wafer 18 to the boat 26 returns to the pod 9 and loads the next wafer 18 into the boat 26.

  During the loading operation of the wafer 18 into the boat 26 by the wafer transfer mechanism 24 in one (upper or lower) pod opener 14, the other (lower or upper) pod opener 14 has the rotary pod shelf. 11 and another pod 9 is transferred and transferred by the pod transfer device 15, and the opening operation of the pod 9 by the other pod opener 14 is simultaneously performed.

  When a predetermined number of wafers 18 are loaded into the boat 26, the furnace port portion of the processing furnace 28 that has been closed by the furnace port shutter 29 is opened by the furnace port shutter 29. Subsequently, the boat 26 is raised by the boat elevator 31 and is loaded into the processing furnace 28.

  After loading, the furnace port is hermetically closed by the seal cap 33, and a required process is performed on the wafer 18 in the process furnace 28.

  After the processing, the wafer 18 and the pod 9 are discharged to the outside of the casing 2 in the reverse procedure to the above except for the alignment process of the wafer 18 with a notch aligner (not shown).

  Next, the processing furnace 28 will be described with reference to FIG.

  The processing furnace 28 has a heater 38 as heating means. The heater 38 has a cylindrical shape and is vertically installed by being supported by a heater base 39 as a holding plate.

  Inside the heater 38, a process tube 41 as a reaction tube is disposed concentrically with the heater 38. The process tube 41 includes an internal reaction tube 42 and an external reaction tube 43 provided concentrically on the outside thereof.

  The inner reaction tube 42 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and has a cylindrical shape with upper and lower ends opened, and the outer reaction tube 43 is formed of quartz or silicon carbide, for example. It has a cylindrical shape with a top end closed and a bottom end open.

  A processing chamber 44 is defined inside the internal reaction tube 42, and the wafer 18 is held by the boat 26 and can be accommodated in the processing chamber 44. The boat 26 is made of a heat-resistant material such as quartz or silicon carbide, and is configured to hold a predetermined number of wafers 18 in a horizontal posture and in a state where the centers are aligned with each other and held in multiple stages. A plurality of heat insulating plates 61 as a heat insulating member having a disk shape made of a heat resistant material such as quartz or silicon carbide are arranged in a plurality of stages in a horizontal posture at the lower portion of the boat 26. It is configured so that the heat from the heat is not easily transmitted to the manifold 45 side.

  Below the external reaction tube 43, the manifold 45 is disposed concentrically with the external reaction tube 43. The manifold 45 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened. The external reaction tube 43 is installed upright on the upper end of the manifold 45 and protrudes from the inner wall of the manifold 45. The inner reaction tube 42 is erected on the inner flange 46 formed. A reaction vessel is formed by the process tube 41 and the manifold 45.

  The seal cap 33 is provided with a nozzle 50 as a gas introduction part so as to communicate with the processing chamber 44, and a gas supply pipe 47 is connected to the nozzle 50. A processing gas supply source and an inert gas supply source (not shown) are connected to the gas supply pipe 47 through a gas flow rate controller 48. A gas flow rate controller 49 is electrically connected to the gas flow rate controller 48, and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

  The manifold 45 is provided with an exhaust pipe 51 for exhausting the atmosphere of the processing chamber 44. The exhaust pipe 51 communicates with a lower end portion of a cylindrical space 52 formed between the internal reaction pipe 42 and the external reaction pipe 43. A vacuum exhaust device 55 such as a vacuum pump is connected to the exhaust pipe 51 via a pressure sensor 53 and a pressure adjusting device 54, and vacuum exhaust is performed so that the pressure in the processing chamber 44 becomes a predetermined pressure (degree of vacuum). It is configured to be able to.

  A pressure control unit 56 is electrically connected to the pressure adjustment device 54 and the pressure sensor 53, and the pressure control unit 56 is controlled by the pressure adjustment device 54 based on the pressure detected by the pressure sensor 53. It is configured to control at a desired timing so that the pressure in the processing chamber 44 becomes a desired pressure.

  The lower end opening of the manifold 45 forms a furnace port, and the furnace port can be airtightly closed by the seal cap 33. The seal cap 33 is made of a metal such as stainless steel and is formed in a disk shape. A rotation mechanism 57 that rotates the boat 26 is installed on the lower surface side of the seal cap 33. A rotating shaft 58 of the rotating mechanism 57 passes through the seal cap 33 and is connected to a boat pedestal 59, and is configured to rotate the wafer 18 by rotating the boat 26. The seal cap 33 is configured to be moved up and down in the vertical direction by the boat elevator 31, so that the boat 26 can be loaded into and withdrawn from the processing chamber 44. A drive control unit 60 is electrically connected to the rotation mechanism 57 and the boat elevator 31, and is configured to control at a desired timing so as to perform a desired operation.

  In the cylindrical space 52, a temperature sensor 62 is erected from the lower part to the upper part of the internal reaction tube 42. A temperature control unit 63 is electrically connected to the heater 38 and the temperature sensor 62, and the temperature control unit 63 determines an energization state to the heater 38 based on temperature information detected by the temperature sensor 62. By adjusting the temperature, the temperature of the processing chamber 44 is controlled to have a desired temperature distribution.

  The gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, and the temperature control unit 63 also constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 64 that controls the entire substrate processing apparatus. Connected. The gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, the temperature control unit 63, and the main control unit 64 are configured as a control device 65.

  Next, a method of forming a thin film on the wafer 18 by the CVD method as one step of the semiconductor device manufacturing process using the processing furnace 28 having the above configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the control device 65.

  When a predetermined number of wafers 18 are loaded into the boat 26, the boat 26 is raised by the boat elevator 31 and loaded into the processing chamber 44. In this state, the seal cap 33 hermetically closes the furnace port.

  The processing chamber 44 is evacuated by the evacuation device 55 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 44 is detected by the pressure sensor 53, and the pressure adjusting device 54 feedback-controls the pressure in the processing chamber 44 based on the detection result.

  Further, the processing chamber 44 is heated by the heater 38 so as to reach a desired temperature. At this time, the power supply to the heater 38 is feedback-controlled based on the temperature information detected by the temperature sensor 62 so that the processing chamber 44 has a desired temperature distribution. Subsequently, the boat 26 is rotated by the rotation mechanism 57. The wafer 18 is rotated integrally with the boat 26, and the processing on the wafer 18 is made uniform.

  Next, a processing gas is supplied from a processing gas supply source (not shown), and the gas controlled to have a desired flow rate by the gas flow rate controller 48 flows through the gas supply pipe 47 and passes through the gas supply pipe 47. It is introduced into the processing chamber 44 from the nozzle 50. The introduced gas ascends in the processing chamber 44, turns back at the upper end opening of the internal reaction tube 42, flows down the cylindrical space 52, and is exhausted from the exhaust pipe 51. When the gas passes through the processing chamber 44, it comes into contact with the surface of the wafer 18, and at this time, a thin film is formed on the surface of the wafer 18 by a thermal CVD reaction.

  When a preset processing time elapses, an inert gas is supplied from an inert gas supply source (not shown), the processing chamber 44 is replaced with the inert gas, and the pressure in the processing chamber 44 is constantly maintained. Return to pressure.

  The boat 26 is lowered by the boat elevator 31 through the seal cap 33.

  The unloading of the processed wafer 18 after processing is as described above.

  As an example, the processing conditions for processing a wafer in the processing furnace of the present embodiment include, for example, in the formation of an oxide film, a processing temperature of 850 ° C., a processing pressure of 200 Pa, a gas type, and a gas. Examples of the supply flow rates H2, O2, etc. are 30 to 6 SLMs, and the wafer is processed by keeping the respective processing conditions constant at certain values within the respective ranges.

  Next, the control device 65 will be described with reference to FIG.

  In FIG. 4, reference numeral 68 denotes a control calculation unit composed of a CPU or the like. An operation unit 70 is connected to the control calculation unit 68 via an input / output control unit 69, and the control calculation unit 68 includes an HDD or the like. The external storage device 71 is connected. The control calculation unit 68, the operation unit 70, the external storage device 71, and the like constitute a first control unit 66.

  The control calculation unit 68 is connected to the gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, the temperature control unit 63, and a sequencer 73 for controlling the opening / closing of the valve via the input / output control unit 72. A gas pattern display panel 74 for displaying the valve open / close state and the gas flow state is connected. The gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, the sequencer 73, the gas pattern display panel 74, etc. constitute second control means 67.

  The operation unit 70 includes a display unit 75, a keyboard (not shown), and the like, and performs recipe creation, setting input, or input of a recipe created in advance. The display unit 75 may be a touch panel and the keyboard may be omitted.

  The external storage device 71 includes a program storage unit 76 and a data storage unit 77. The program storage unit 76 includes a process program for executing a process, a recipe program for executing a recipe corresponding to the process, and a valve program. A substrate processing program necessary for substrate processing, such as a determination program for determining the use prohibition state and a sequence program for executing a sequence, is stored. The data storage unit 77 has a recipe 78 and a use prohibition state set. The use prohibition valve setting table 79 and data such as the temperature, pressure, gas flow rate, etc. of the processing chamber 44 during processing are recorded.

  In the present invention, in response to the substrate processing to be executed, the use prohibition valve setting table 79 for the valve to be prohibited is created, and when the recipe for executing the substrate processing is set and inputted, the set recipe is set. It is determined whether or not the valve used in the step is consistent with the use state of the valve set in the prohibited valve setting table 79, and if it is appropriate, the substrate processing is executed and the consistency is not achieved. Is to issue an alarm and cancel execution of the substrate processing.

  With reference to FIG. 5 to FIG. 8, setting of prohibition of use of the valve, change of setting, and the like will be described.

  First, the use prohibition valve setting table 79 corresponding to the substrate processing is created and stored in the data storage unit 77 via the operation unit 70 and the control calculation unit 68. The use prohibition valve setting table 79 may be prepared for each process and input for setting as preparation for executing the substrate processing, or the use prohibition valve setting table 79 corresponding to the contents of the substrate processing is prepared in advance. In addition, when the contents of the substrate processing are determined by being stored in the data storage section 77, the use prohibition valve setting table 79 corresponding to the contents may be selected.

  In the use prohibition valve setting table 79, as shown in FIG. 5, a unique number is assigned to a valve provided in the pipe, and the use prohibition valve is set according to the contents of processing.

  FIG. 6 is a schematic diagram showing the relationship between the pipe and the valve. The first branch pipe 81 and the second branch pipe 82 merge to form the first pipe 83, and the third branch pipe 84 and the fourth branch pipe 85 The second pipe 86 is formed by merging, and the first branch pipe 81, the second branch pipe 82, the third branch pipe 84, and the fourth branch pipe 85 are each provided with a No. 2 pipe. 1 valve 87, no. 2 valve 88, no. 3 valve 89, no. A four valve 90 is provided.

  Further, the substrate processing apparatus performs four types of substrate processing A, B, C, and D, and the use prohibition valve setting tables A, B, C, and D are created as the use prohibition valve setting table 79 for each substrate processing. The prohibited valve setting tables A, B, C, and D are stored in the data storage unit 77.

  As the contents of the use prohibition valve setting table 79, for example, with respect to the use prohibition valve setting table A, as shown in FIG. No. 1 valve 87 and the above No. 1 3 valve 89 is used. 2 valve 88 and the above No. 2 valve. The use of the four valve 90 is prohibited.

  For example, assuming that the substrate process A is executed, the operation setting is performed so that the substrate process A is executed by the operation unit 70. In addition, a recipe for executing the substrate processing A is created by the operation unit 70. The substrate processing A is executed in a plurality of steps, and the recipe sets processing conditions for each step, for example, the type of gas to be supplied, the gas flow rate, the timing for supplying the gas, and the opening and closing of the valve accompanying the gas supply. To do. The recipe is set and input to the data storage unit 77.

  When a command for starting the substrate processing A is input from the operation unit 70, a recipe is called in, and the use prohibition valve setting table A corresponding to the substrate processing A is called from the external storage device 71. A determination program for determining the use prohibition state is developed. A setting request is made based on the use conditions of the valve written in the recipe, and the setting request is compared with the setting state of the use prohibition valve setting table A by the determination program. The comparison of the setting states may be performed by reading the entire prohibited-use valve setting table A and the entire recipe in advance, or the setting state of the prohibited-use valve setting table A and each step of the recipe are read. It may be compared.

  When the valve setting contents from the recipe and the setting contents of the prohibited valve setting table A are not consistent, an alarm is issued. An example of a case where the setting contents of the prohibited valve setting table A do not match is a case where a recipe for the substrate processing B is set to execute the substrate processing A. The alarm is such that a message indicating that the setting by the recipe is incorrect is displayed on the display unit 75, a warning light blinks, a buzzer sounds, and the like. Further, when an incorrect valve is opened and closed by manual operation or the like at the time of execution, an alarm is generated because it is not consistent with the setting contents of the use prohibition setting table A.

  In addition, the substrate processing command is canceled at the same time that an alarm is issued. As a result, the operator can know that there is an error in the setting for executing the substrate processing, and the substrate processing is canceled, so that the occurrence of defective processing can be prevented.

  Further, when the valve setting contents from the recipe and the setting contents of the use prohibition valve setting table A match, the use prohibition valve is set, and the board processing such as a sequence program is performed from the program storage unit 76. A substrate processing program for execution is developed.

  The gas flow rate control unit 49, the pressure control unit 56, the drive control unit 60, the temperature control unit 63, and the gas pattern display panel 74 are driven and controlled based on the substrate processing program. Further, a valve opening / closing control command is issued to the sequencer 73 based on the substrate processing program. No. 1 valve 87 and the above No. 1 The opening and closing of the three valve 89 is controlled.

  Note that the use / prohibition of the valve in the substrate processing to be executed means that the use of the valve is prohibited because the judgment program checks the use state of the valve of the recipe that has been set and input according to the prohibition valve setting table A. Is certain.

  Next, when executing the substrate processing B, the unusable valve setting table B is called in, and the valve to be used is the No. 2 valve 88, No. No. 4 valve 90 and use prohibition valve No. 1 valve 87, No. 1 above. In the case where the substrate processing C is executed, the valve to be used is the above-mentioned No. 3 valve 89. 2 valve 88, No. No. 3 valve 89, use prohibition valve is No. No. 1 valve 87, No. 1 above. 4 is set as the valve 90, and when the substrate processing D is executed, the valve to be used is the aforementioned No. 4. No. 1 valve 87, No. 1 above. No. 4 valve 90 and use prohibition valve 2 valve 88, No. Three valves 89 are set.

  The determination program checks the valves used in the recipe based on the use prohibition valve setting table 79 corresponding to the substrate processing to be executed, and executes the substrate processing if they are consistent with each other. If not, an alarm is issued based on the determination result of the control calculation unit 68.

  Thus, when the substrate processing changes, the valves used in the recipe are surely checked by the use prohibition valve setting table 79 corresponding to the substrate processing, so that an incorrect recipe is executed and a defective product is generated. Is prevented.

  Further, when performing different substrate processing other than the substrate processing A to D, it is only necessary to create and add a use prohibition valve setting table 79 corresponding to the processing, change the substrate processing software, or change the hardware setting. Etc. are not required. Therefore, it is rich in versatility, and can handle a plurality of processes and film types with one substrate processing apparatus. For example, the substrate process A may be CVD, the substrate process B may be an oxide film process, and the substrate process C may be an annealing process. The substrate processing A and the substrate processing B may be the same CVD, but the substrate processing A may be a metal film and the substrate processing B may be a nitride film or an oxide film.

  The present invention is not limited to a substrate processing apparatus for a semiconductor device, but can be applied to a substrate processing apparatus for manufacturing an LCD device, and can also be applied to a horizontal type substrate processing apparatus. Needless to say, substrate processing can be applied to all processing using gas.

(Appendix)
The present invention includes the following embodiments.

  (Supplementary note 1) Recipe in which the contents of substrate processing such as opening and closing of valves accompanying gas supply / discharge are described, a display unit (operation screen) for creating the recipe composed of a plurality of steps, A substrate processing apparatus comprising: a first control unit having a control operation unit that issues an execution instruction; and a second control unit that controls a control parameter to execute the recipe in accordance with an instruction from the first control unit. The first control means is a determination means for comparing the table defining the use of the valve corresponding to the recipe, and comparing the specified contents of the valve specified in the recipe with the specified contents of the table to determine consistency. And a substrate processing apparatus.

  (Supplementary note 2) Recipe in which the contents of substrate processing such as opening and closing of valves accompanying gas supply and discharge are described, a display unit (operation screen) for creating the recipe composed of a plurality of steps, A first control unit having a control operation unit for performing an execution instruction; and a second control unit for controlling a control parameter for performing the substrate processing by executing the recipe in accordance with an instruction from the first control unit. In the substrate processing apparatus, the first control means includes a table that defines the use of the valve corresponding to the substrate processing, and the specified content of the valve defined in the recipe that is executed when the substrate processing is performed. A substrate processing apparatus comprising: a determination unit that compares the prescribed contents of the table to determine consistency.

  (Supplementary note 3) When the recipe is executed, the first control means checks (reads) the entire steps of the recipe in advance, and is pre-registered with a valve whose operation is set in each step. The substrate processing apparatus according to supplementary note 1 or supplementary note 2, further comprising a determination unit that compares the valves set in the table to determine consistency.

  (Supplementary note 4) The substrate processing apparatus according to supplementary notes 1 to 3, wherein the first control unit does not give an instruction to the second control unit when the determination unit determines that the consistency is not achieved.

  (Additional remark 5) The said 1st control means is a substrate processing apparatus of Additional remark 4 which displays a warning further, when it determines with the determination means not taking consistency.

  (Additional remark 6) The 1st control means which has the recipe which described the board | substrate process content, such as opening and closing of the valve accompanying gas supply / discharge, and the control operation part which performs the execution instruction of this recipe, From this 1st control means In the substrate processing apparatus having the second control means for controlling the control parameter in order to execute the recipe according to the instructions in the above, the use of the valve corresponding to the recipe is specified on the table and the recipe is executed A substrate processing method comprising: comparing the prescribed contents of the valve prescribed in the recipe to be executed and the prescribed contents of the table to determine consistency.

  (Additional remark 7) The 1st control means which has a recipe by which the board | substrate process was performed by the recipe and the board | substrate process content, such as opening and closing of a valve accompanying gas supply / discharge, was described, and a control calculation part which performs the execution instruction of this recipe And a second control means for controlling a control parameter in order to execute the substrate processing in accordance with an instruction from the first control means, the use of a valve corresponding to the substrate processing on the table The substrate processing method is characterized in that consistency is determined by comparing the specified content of the valve specified for the substrate processing to be executed when executing the substrate processing with the specified content of the table.

  (Supplementary Note 8) A step of loading a plurality of substrates into a boat, a step of charging the boat into a processing furnace, a step of maintaining a predetermined temperature and a predetermined pressure, and processing a substrate while flowing a predetermined gas A substrate processing method comprising: a step of unloading the boat from the processing furnace; and a step of unloading the substrate from the boat. The substrate processing method is defined on a table before performing the step of performing the substrate processing. A substrate processing method comprising a step of comparing the prescribed content of the valve and the prescribed content of the valve defined in the recipe to determine consistency.

1 is a schematic perspective view of a substrate processing apparatus in which the present invention is implemented. It is a schematic side view of this substrate processing apparatus. It is a schematic sectional drawing of the vertical processing furnace used for this substrate processing apparatus. It is a block diagram which shows the control apparatus of this substrate processing apparatus. It is a figure which shows an example of the use prohibition valve | bulb setting table used for this control apparatus. It is a schematic diagram which shows the relationship between piping of this invention, piping, and a valve | bulb. It is a figure which shows a response | compatibility with the kind of board | substrate process, the use prohibition state of the valve | bulb corresponding to a substrate process, and a use prohibition valve setting table. It is explanatory drawing which shows the effect | action of the valve opening / closing prohibition process of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Housing | casing 28 Processing furnace 41 Process tube 66 1st control means 67 2nd control means 68 Control calculating part 70 Operation part 71 External storage device 75 Display part 76 Program storage part 77 Data storage part 78 Recipe 79 Use prohibition Valve setting table

Claims (1)

  In accordance with an instruction from the first control means, a first control means having a recipe that describes the contents of substrate processing such as opening and closing of a valve associated with gas supply and discharge, and a control operation unit that instructs execution of the recipe, In order to execute the recipe, a substrate processing apparatus comprising a second control means for controlling a control parameter, wherein the first control means includes a table defining use of a valve corresponding to the recipe, and the recipe A substrate processing apparatus comprising: a determination unit that compares the specified content of the valve specified in the above and the specified content of the valve specified in the table to determine consistency.

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