WO2019035290A1 - Capteur de couple - Google Patents

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Publication number
WO2019035290A1
WO2019035290A1 PCT/JP2018/025894 JP2018025894W WO2019035290A1 WO 2019035290 A1 WO2019035290 A1 WO 2019035290A1 JP 2018025894 W JP2018025894 W JP 2018025894W WO 2019035290 A1 WO2019035290 A1 WO 2019035290A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
rotating shaft
torque detector
layer
joined
Prior art date
Application number
PCT/JP2018/025894
Other languages
English (en)
Japanese (ja)
Inventor
祐希 瀬戸
石倉　義之
里奈 小笠原
Original Assignee
アズビル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アズビル株式会社 filed Critical アズビル株式会社
Priority to CN201880051544.7A priority Critical patent/CN111033198B/zh
Priority to KR1020207002934A priority patent/KR102333525B1/ko
Publication of WO2019035290A1 publication Critical patent/WO2019035290A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L3/00—Measuring torque, work, mechanical power, or mechanical efficiency, in general
    • G01L3/02—Rotary-transmission dynamometers
    • G01L3/04—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft
    • G01L3/10—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating
    • G01L3/108—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating involving resistance strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L3/00—Measuring torque, work, mechanical power, or mechanical efficiency, in general
    • G01L3/02—Rotary-transmission dynamometers
    • G01L3/04—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft
    • G01L3/10—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating

Definitions

  • the present invention relates to a torque detector that detects torque applied to a rotating shaft.
  • a metal strain gauge is attached to the peripheral surface of the rotating shaft as one of the methods to detect the torque applied to the rotating shaft, and the magnitude of shear stress generated on the peripheral surface of the rotating shaft by torque There is a method of detecting by value change.
  • a bridge circuit is configured by mounting four or more metal strain gauges at 45 degrees with respect to the axial direction of the rotating shaft.
  • the present invention has been made to solve the problems as described above, and it is an object of the present invention to provide a torque detector that improves the detection accuracy of torque.
  • the torque detector according to the present invention has a resistance gauge, and a substrate layer in which strain occurs in response to an external force, and one surface is joined to at least both ends of the substrate layer, and both longitudinal direction ends of opposing surfaces facing the one surface are rotated. And an insulating layer bonded to the shaft.
  • FIGS. 4A and 4B are diagrams showing a state in which the strain sensor according to Embodiment 1 of the present invention is attached to a rotating shaft, FIG.
  • FIG. 4A is a top view
  • FIG. 4B is a side view.
  • 5A and 5B are diagrams for explaining the basic operation principle of the torque detector
  • FIG. 5A is a side view showing the torque applied to the rotating shaft
  • FIG. 5B is a strain sensor based on the torque shown in FIG.
  • It is a figure which shows an example of the stress distribution which generate
  • It is a side view which shows another structural example of the distortion sensor in Embodiment 1 of this invention.
  • FIG. 11A is a top view showing another arrangement example of the resistance gauge in accordance with the first embodiment of the present invention
  • FIG. 11B is a view showing a construction example of a half bridge circuit constituted by the resistance gauge shown in FIG. 11A.
  • 12A to 12C are back views showing another configuration example of the silicon layer in the first embodiment of the present invention.
  • FIG. 1 is a view showing a configuration example of a torque detector according to Embodiment 1 of the present invention.
  • the torque detector detects the torque applied to the rotating shaft 5 (see FIG. 4).
  • a drive system 6 such as a motor is connected to one end in the axial direction, and a load system such as a robot hand is connected to the other end.
  • the torque detector includes a strain sensor 1 as shown in FIG.
  • the strain sensor 1 is a semiconductor strain gauge attached to the rotating shaft 5 and outputting a voltage according to external shear stress (tensile stress and compressive stress).
  • the strain sensor 1 is realized by MEMS (Micro Electro Mechanical Systems).
  • the strain sensor 1 has a silicon layer (substrate layer) 11 and an insulating layer 12 as shown in FIGS.
  • the silicon layer 11 is a single crystal silicon in which strain is generated in response to an external force, and is a sensor layer having a Wheatstone bridge circuit composed of a plurality of resistance gauges (diffusion resistances) 13.
  • a groove 111 is formed in the center of the back surface (one surface) of the silicon layer 11.
  • the thin portion 112 is formed in the silicon layer 11 by the groove portion 111.
  • the resistance gauge 13 is formed on the thin portion 112.
  • the thickness of the thin portion 112 is appropriately designed in accordance with the rigidity and the like of the silicon layer 11. For example, when the rigidity of the silicon layer 11 is low, the thin portion 112 is thick, and when the rigidity of the silicon layer 11 is high, the thin portion 112 is thin.
  • the resistance gauge 13 is formed, for example, in the ⁇ 110> direction of the silicon layer 11 whose crystal orientation on the surface is (100).
  • four resistance gauges 13 (R1 to R4) constituting a full bridge circuit (Wheatstone bridge circuit) are formed in a diagonal direction (45 degrees direction) with respect to the side direction of the silicon layer 11. Shows the case of detecting shear stress in two directions.
  • the above-mentioned oblique direction is not limited to 45 degrees direction, but the characteristic of distortion sensor 1 46 degrees direction etc) is acceptable.
  • the insulating layer 12 is a pedestal in which the upper surface (one surface) is joined to at least both ends of the back surface of the silicon layer 11 and the longitudinal opposite ends of the back surface (facing surface facing the one surface) are joined to the rotating shaft 5.
  • glass or sapphire can be used as the insulating layer 12.
  • FIG. 1 shows the case where the upper surface of the insulating layer 12 is bonded to the entire surface of the back surface of the silicon layer 11.
  • a groove portion 121 is formed in a region excluding both ends in the longitudinal direction of the back surface. Bonding portions 122 are formed at both ends in the longitudinal direction of the back surface of the insulating layer 12 by the groove portions 121. Then, as shown in FIG. 4, the bonding portion 122 of the insulating layer 12 is directly bonded to the rotating shaft 5.
  • a plurality of resistance gauges 13 are formed in the silicon layer 11 by ion implantation (Step ST1). Then, a plurality of resistance gauges 13 form a Wheatstone bridge circuit.
  • the groove portion 111 is formed on the back surface of the silicon layer 11 by etching (step ST2). Thereby, the portion of the silicon layer 11 where the resistance gauge 13 is formed is made to be the thin portion 112.
  • the groove 121 is formed by etching in the region excluding the both ends in the longitudinal direction of the back surface of the insulating layer 12 (step ST3).
  • the bonding portions 122 are formed at both ends in the longitudinal direction of the back surface of the insulating layer 12.
  • the back surface of the silicon layer 11 and the top surface of the insulating layer 12 are bonded by, for example, anodic bonding (step ST4).
  • FIG. 4 shows a state in which the strain sensor 1 is attached to the rotating shaft 5.
  • the strain sensor 1 is disposed such that the resistance gauge 13 is directed obliquely (45 degrees) with respect to the axial direction of the rotating shaft 5. That is, the resistance gauge 13 is disposed so as to face the generation direction of the shear stress generated when the torque is applied to the rotating shaft 5.
  • the above-mentioned oblique direction is not limited to 45 degrees direction, but the characteristic of distortion sensor 1 46 degrees direction etc) is acceptable.
  • FIG. 5A the drive system 6 is connected to one end of the rotary shaft 5 to which the strain sensor 1 is attached, and a state where torque is applied to the rotary shaft 5 by the drive system 6 is shown.
  • FIG. 5A by applying torque to the rotating shaft 5, the strain sensor 1 attached to the rotating shaft 5 is strained, and shear stress as shown in FIG. 5B is generated on the surface of the strain sensor 1. .
  • FIG. 5 shows that the deeper the color, the stronger the tensile stress, and the lighter the color, the stronger the compressive stress.
  • And resistance gauge 13 which turned to a diagonal direction (45 degrees direction) to the axial direction of axis of rotation 5 changes resistance value according to this shear stress, and strain sensor 1 changes according to change of resistance value. Output voltage.
  • the torque detector detects the torque applied to the rotating shaft 5 from the voltage output by the strain sensor 1.
  • bonding portions 122 are formed on both ends in the longitudinal direction of the back surface of the insulating layer 12, and only the bonding portions 122 are bonded to the rotating shaft 5.
  • the relative amount of strain increases as the mounting position becomes farther in the axial direction of the rotating shaft 5. Therefore, by setting the joint portion 122 of the strain sensor 1 only to the outside in the axial direction, the largest displacement difference can be transmitted to the strain sensor 1, and the detection sensitivity to the torque applied to the rotating shaft 5 is improved.
  • the insulating layer 12 should be made of a harder material.
  • the effect is higher. For example, using sapphire or the like as the insulating layer 12 is more effective than using glass.
  • the thin portion 112 is formed by forming the groove portion 111 in the center of the back surface of the silicon layer 11, and the resistance gauge 13 is formed in the thin portion 112. Thereby, the stress can be concentrated on the thin portion 112 in which the resistance gauge 13 is formed, and the detection sensitivity to the torque applied to the rotating shaft 5 is improved.
  • the present invention is not limited to this.
  • the insulating layer (first insulating layer) 123 and the insulating layer (second insulating layer) 124 in which the insulating layer 12 is divided into two at the center are used. Good. Thereby, the deformation of the rotating shaft 5 can be transmitted to the strain sensor 1 more efficiently.
  • the present invention is not limited to this, as long as only both longitudinal ends of the insulating layer 12 are joined to the rotating shaft 5.
  • two plate-like insulating layers (a first insulating layer, a second insulating layer) disposed as an insulating layer 12 with a gap and facing only both ends in the longitudinal direction of the silicon layer 11
  • the two insulating layers 125 and 126 may be directly bonded to the rotating shaft 5 using 125 and 126.
  • a column member 14 with high rigidity is joined to both ends in the longitudinal direction of the back surface of the plate-like insulating layer 12, and the insulating layer 12 is connected to the rotary shaft 5 via the column member 14. It may be configured to be bonded to For example, as shown in FIG. 9, both ends in the longitudinal direction of the back surface of the plate-like insulating layer 12 may be directly bonded to the rotating shaft 5 by an adhesive member (adhesive, solder or the like) 15.
  • the arrangement of the four resistance gauges 13 is not limited to the arrangement shown in FIG. 2, but may be an arrangement as shown in FIG. 10, for example.
  • a communication groove portion 113 may be formed on the back surface of the silicon layer 11 so as to communicate the groove portion 111 with the side surface of the silicon layer 11.
  • a temperature of about 400 ° C. is applied by anodic bonding. Therefore, when the communication groove portion 113 is not present, the air present in the groove portion 111 between the silicon layer 11 and the insulating layer 12 is sealed in a high temperature state at the time of anodic bonding, and when the temperature drops to normal temperature As a result, the thin-walled portion 112 may be deformed and the zero point of the strain sensor 1 may be displaced.
  • the communication groove portion 113 air present in the groove portion 111 can be released to the outside at the time of anodic bonding, and deformation of the thin portion 112 can be avoided.
  • the silicon layer 11 needs to be configured so as to be partially thinned by the groove portion 111 and the communication groove portion 113 so as not to be entirely thinned.
  • the present invention is not limited to this, and a semiconductor strain cage of another shape (for example, a shape without the thin portion 112) may be used.
  • the silicon layer 11 having the resistance gauge 13 and one surface are joined to at least both ends of the silicon layer 11, and both longitudinal direction ends of the opposing surface facing the one surface are rotation axes Since the insulating layer 12 joined to the body 5 is provided, the torque detection accuracy is improved.
  • the silicon layer 11 was used as a board
  • substrate layer was shown in the above, it does not restrict to this, and should just be a member which distortion produces according to external force.
  • an insulator such as glass
  • the resistance gauge 13 is formed by depositing a film on the insulator by sputtering or the like.
  • the resistance gauge 13 is formed by sputtering the metal via an insulating film.
  • the silicon layer 11 may be used as a substrate layer, and the resistance gauge 13 may be formed on the silicon layer 11 by sputtering or the like.
  • the gauge factor becomes higher than that of a general metal strain gauge. Further, when the resistance gauge 13 is formed by film formation, the gauge ratio does not change depending on the crystal orientation as opposed to the case where the resistance gauge 13 is formed in the silicon layer 11 by ion implantation, that is, the direction needs to be limited. There is no On the other hand, the gauge factor is 4 to 10 times higher in the case where the resistance gauge 13 is formed by ion implantation in the silicon layer 11 than when the resistance gauge 13 is formed by film formation.
  • the torque detector according to the present invention is suitable for use in, for example, a torque detector that detects a torque applied to a rotating shaft because the torque detection accuracy is improved.
  • Reference Signs List 1 strain sensor 5 rotating shaft 6 driving system 11 silicon layer (substrate layer) 12 insulation layer 13 resistance gauge (diffusion resistance) 14 Column member 15 Bonding member 111 Groove portion 112 Thin portion 113 Communication groove portion 121 Groove portion 122 Bonding portion 123 Insulating layer (first insulating layer) 124 Insulating layer (second insulating layer) 125 insulating layer (first insulating layer) 126 insulating layer (second insulating layer)

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measurement Of Force In General (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

L'objet de l'invention est équipé : d'une couche de silicium (11) possédant une jauge de résistance (13) ; et d'une couche isolante (12) dont une face est liée au moins aux deux extrémités de la couche de silicium (11), et dont les deux extrémité dans la direction longitudinale sont liées à un axe de rotation (5) au niveau d'une face opposée s'opposant à la face susmentionnée.
PCT/JP2018/025894 2017-08-14 2018-07-09 Capteur de couple WO2019035290A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880051544.7A CN111033198B (zh) 2017-08-14 2018-07-09 扭矩检测器
KR1020207002934A KR102333525B1 (ko) 2017-08-14 2018-07-09 토크 검출기

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017156382A JP6820101B2 (ja) 2017-08-14 2017-08-14 トルク検出器
JP2017-156382 2017-08-14

Publications (1)

Publication Number Publication Date
WO2019035290A1 true WO2019035290A1 (fr) 2019-02-21

Family

ID=65362284

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/025894 WO2019035290A1 (fr) 2017-08-14 2018-07-09 Capteur de couple

Country Status (4)

Country Link
JP (1) JP6820101B2 (fr)
KR (1) KR102333525B1 (fr)
CN (1) CN111033198B (fr)
WO (1) WO2019035290A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112798151A (zh) * 2021-01-26 2021-05-14 松诺盟科技有限公司 扭矩传感器力臂结构及扭矩传感器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63266324A (ja) * 1987-04-24 1988-11-02 Nekushii Kenkyusho:Kk モ−メント検出装置
JPH0846218A (ja) * 1994-08-04 1996-02-16 Mitsubishi Electric Corp 半導体圧力検出装置
JPH0989692A (ja) * 1995-09-25 1997-04-04 Nissan Motor Co Ltd ステアリングトルクセンサ
JP2001272287A (ja) * 2000-03-27 2001-10-05 Tadahiro Kato 歪み検出センサ
US20110203385A1 (en) * 2010-02-24 2011-08-25 Jan Huels Device for measuring torsions, bendings, and the like, and corresponding manufacturing method

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Publication number Priority date Publication date Assignee Title
GB8408502D0 (en) * 1984-04-03 1984-05-16 Trw Probe Electronics Co Ltd Torque sensing apparatus
JPS61223625A (ja) * 1985-03-29 1986-10-04 Nec Corp センサ
JP2006220574A (ja) * 2005-02-14 2006-08-24 Hitachi Ltd 回転体力学量測定装置および回転体力学量計測システム
JP4566227B2 (ja) * 2007-09-25 2010-10-20 株式会社日立製作所 半導体歪センサーおよび半導体歪センサーの取付け方法
JP2010197219A (ja) * 2009-02-25 2010-09-09 Hitachi Ltd センサデバイスおよび計測システム
CN202814608U (zh) * 2012-06-13 2013-03-20 内蒙古科技大学 扭矩测量装置
KR20140067650A (ko) * 2012-11-27 2014-06-05 현대자동차주식회사 토크 센서
CN103926028B (zh) * 2014-03-25 2016-05-18 慧石（上海）测控科技有限公司 一种应变片的结构设计及制作工艺
WO2015190330A1 (fr) * 2014-06-09 2015-12-17 日立オートモティブシステムズ株式会社 Dispositif de détection de couple
JP2016109568A (ja) 2014-12-08 2016-06-20 パナソニックＩｐマネジメント株式会社 トルクセンサ
US9739673B2 (en) * 2015-08-05 2017-08-22 Sensata Technologies, Inc. Sensor substrate
CN205138699U (zh) * 2015-12-01 2016-04-06 福建省莆田市衡力传感器有限公司 一种贴面式拉压扭专用传感器
CN106706188A (zh) * 2016-12-08 2017-05-24 陕西电器研究所 一种高刚度扭矩传感器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63266324A (ja) * 1987-04-24 1988-11-02 Nekushii Kenkyusho:Kk モ−メント検出装置
JPH0846218A (ja) * 1994-08-04 1996-02-16 Mitsubishi Electric Corp 半導体圧力検出装置
JPH0989692A (ja) * 1995-09-25 1997-04-04 Nissan Motor Co Ltd ステアリングトルクセンサ
JP2001272287A (ja) * 2000-03-27 2001-10-05 Tadahiro Kato 歪み検出センサ
US20110203385A1 (en) * 2010-02-24 2011-08-25 Jan Huels Device for measuring torsions, bendings, and the like, and corresponding manufacturing method

Also Published As

Publication number Publication date
KR102333525B1 (ko) 2021-12-01
JP2019035637A (ja) 2019-03-07
KR20200019244A (ko) 2020-02-21
CN111033198B (zh) 2021-09-28
JP6820101B2 (ja) 2021-01-27
CN111033198A (zh) 2020-04-17

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