WO2019069683A1 - Détecteur de couple - Google Patents

Détecteur de couple Download PDF

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Publication number
WO2019069683A1
WO2019069683A1 PCT/JP2018/034570 JP2018034570W WO2019069683A1 WO 2019069683 A1 WO2019069683 A1 WO 2019069683A1 JP 2018034570 W JP2018034570 W JP 2018034570W WO 2019069683 A1 WO2019069683 A1 WO 2019069683A1
Authority
WO
WIPO (PCT)
Prior art keywords
strain
rotating shaft
torque
resistance
torque detector
Prior art date
Application number
PCT/JP2018/034570
Other languages
English (en)
Japanese (ja)
Inventor
里奈 小笠原
石倉　義之
祐希 瀬戸
Original Assignee
アズビル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アズビル株式会社 filed Critical アズビル株式会社
Publication of WO2019069683A1 publication Critical patent/WO2019069683A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L3/00—Measuring torque, work, mechanical power, or mechanical efficiency, in general
    • G01L3/02—Rotary-transmission dynamometers
    • G01L3/04—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft
    • G01L3/10—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating

Definitions

  • the present invention relates to a torque detector that detects torque applied to a rotating shaft.
  • a metal strain gauge is attached to the peripheral surface of the rotating shaft as one of the methods to detect the torque applied to the rotating shaft, and the magnitude of shear stress generated on the peripheral surface of the rotating shaft by torque There is a method of detecting by value change.
  • this method even when another shaft load (a thrust load or a radial load) other than torque is applied to the rotating shaft, sensitivity is obtained to some extent, and only torque can not be detected accurately.
  • Patent Document 1 it is necessary to arrange eight or more metal strain gauges. Therefore, it is necessary to exactly match the relative positions and angles of the metal strain gauges, which causes a problem of difficulty.
  • the present invention has been made to solve the above-described problems, and it is an object of the present invention to provide a torque detector which can detect torque accurately even when another axis load is applied and which can be easily manufactured. There is.
  • a torque detector measures the sum of outputs of a plurality of strain sensors having a circuit formed of a plurality of active gauges and mounted on a rotating shaft at equal intervals around an axis and a plurality of strain sensors. And a measuring unit, wherein the active gauge is obliquely directed to the axial direction of the rotating shaft.
  • FIGS. 2A to 2C are diagrams showing a configuration example of the strain sensor according to the first embodiment of the present invention
  • FIG. 2A is a top view
  • FIG. 2B is a side view
  • FIG. 3A is a top view showing an arrangement example of the resistance gauges according to the first embodiment of the present invention
  • FIG. 3B is a view showing a construction example of a full bridge circuit composed of the resistance gauges shown in FIG. 3A.
  • FIGS. 6A and 6B are diagrams for explaining the basic operation principle of the torque detector, and FIG. 5A is a side view showing the torque applied to the rotating shaft, and FIG. 5B is a strain sensor based on the torque shown in FIG. It is a figure which shows an example of the stress distribution which generate
  • produced in. 6A to 6C are diagrams showing a case where a radial load is applied in the sensor mounting direction in the torque detector according to Embodiment 1 of the present invention, and FIGS. 6A and 6B show the mounting position of the strain sensor.
  • FIG. 6C is a front view and a side view, and FIG. 6C is a side view showing a state in which a radial load is applied in the sensor mounting direction.
  • FIGS. 7A to 7D are diagrams showing a case where a radial load is applied in the sensor non-mounting direction in the torque detector according to Embodiment 1 of the present invention
  • FIGS. 7A and 7B show mounting positions of strain sensors.
  • 7C is a side view showing a state in which a radial load is applied in the sensor mounting direction
  • FIG. 7D is a view showing a state of two strain sensors in FIG. 7C.
  • 8A to 8C are top views showing another example of arrangement of the resistance gauges according to the first embodiment of the present invention.
  • FIG. 9A is a top view showing another arrangement example of the resistance gauges according to the first embodiment of the present invention
  • FIG. 9B is a view showing a construction example of a half bridge circuit constituted by the resistance gauges shown in FIG. 9A.
  • 10A to 10C are diagrams showing another configuration example of the silicon layer in the first embodiment of the present invention.
  • FIG. 1 is a front view showing a configuration example of a torque detector according to Embodiment 1 of the present invention.
  • FIG. 1 shows a state in which the strain sensor 1 is attached to the rotating shaft 5.
  • the torque detector detects the torque applied to the rotating shaft 5.
  • a drive system 6 such as a motor is connected to one end in the axial direction, and a load system such as a robot hand is connected to the other end.
  • the torque detector includes a plurality of strain sensors 1 and a measurement unit 2.
  • FIG. 1 shows the case where two strain sensors 1 are used. Below, the case where a semiconductor strain gauge is used as the strain sensor 1 is shown.
  • the strain sensor 1 is a semiconductor strain gauge attached to the rotary shaft 5 and outputting a signal according to external shear stress (tensile stress and compressive stress).
  • the strain sensor 1 is realized by MEMS (Micro Electro Mechanical Systems).
  • the strain sensor 1 has a silicon layer (substrate layer) 11 and an insulating layer 12 as shown in FIGS.
  • the silicon layer 11 is a single crystal silicon which is strained in response to an external force, and is a sensor layer having a circuit composed of a plurality of resistance gauges (diffusion resistance) 13 which are active gauges.
  • FIG. 3 shows the case where the circuit is a full bridge circuit of a Wheatstone bridge circuit.
  • a groove 111 is formed in the center of the back surface (one surface) of the silicon layer 11.
  • the thin portion 112 is formed in the silicon layer 11 by the groove portion 111.
  • the resistance gauge 13 is formed on the thin portion 112.
  • the thickness of the thin portion 112 is appropriately designed in accordance with the rigidity and the like of the silicon layer 11. For example, when the rigidity of the silicon layer 11 is low, the thin portion 112 is thick, and when the rigidity of the silicon layer 11 is high, the thin portion 112 is thin.
  • the resistance gauge 13 is formed in the ⁇ 110> direction of the silicon layer 11.
  • four resistance gauges 13 constituting a full bridge circuit (Wheatstone bridge circuit) are formed in a diagonal direction (45 degrees direction) with respect to the side direction of the silicon layer 11. Shows the case of detecting shear stress in two directions.
  • the above-mentioned oblique direction is not limited to 45 degrees direction, but the characteristic of distortion sensor 1 46 degrees direction etc) is acceptable.
  • the insulating layer 12 is a pedestal whose upper surface is joined to the back surface of the silicon layer 11 and whose back surface is joined to the rotary shaft 5.
  • glass or sapphire can be used as the insulating layer 12.
  • step ST1 a plurality of resistance gauges 13 are formed on the silicon layer 11 by ion implantation (step ST1). Then, a plurality of resistance gauges 13 form a Wheatstone bridge circuit. Next, the groove portion 111 is formed on the back surface of the silicon layer 11 by etching (step ST2). Thereby, the portion of the silicon layer 11 where the resistance gauge 13 is formed is made to be the thin portion 112. Next, the back surface of the silicon layer 11 and the top surface of the insulating layer 12 are bonded by, for example, anodic bonding (step ST3).
  • the strain sensor 1 manufactured as described above is attached to the rotating shaft 5
  • the back surface of the insulating layer 12 and the rotating shaft 5 are joined by, for example, solder bonding.
  • the rear surface of the insulating layer 12 and the bonding portion of the rotary shaft 5 are metallized and then solder bonding is performed.
  • the plurality of strain sensors 1 are arranged at equal intervals so that the resistance gauges 13 are directed obliquely (with 45 degrees) with respect to the axial direction of the rotating shaft 5. That is, the resistance gauge 13 is disposed so as to face the generation direction of the shear stress generated when the torque is applied to the rotating shaft 5.
  • the above-mentioned oblique direction is not limited to 45 degrees direction, but the characteristic of distortion sensor 1 46 degrees direction etc) is acceptable.
  • the plurality of strain sensors 1 have the same sensitivity. In FIG. 1, two strain sensors 1 are disposed opposite to each other on the rotating shaft 5.
  • the measuring unit 2 measures the sum of the signals output by the plurality of strain sensors 1 as a torque. In FIG. 1, the measuring unit 2 measures the sum of the signals output by the two strain sensors 1 as a torque.
  • FIG. 5A the drive system 6 is connected to one end of the rotary shaft 5 to which the strain sensor 1 is attached, and a state where torque is applied to the rotary shaft 5 by the drive system 6 is shown.
  • FIG. 5 shows a case where one strain sensor 1 is used.
  • FIG. 5A by applying torque to the rotating shaft 5, the strain sensor 1 attached to the rotating shaft 5 is strained, and shear stress as shown in FIG. 5B is generated on the surface of the strain sensor 1. .
  • FIG. 5 shows that the deeper the color, the stronger the tensile stress, and the lighter the color, the stronger the compressive stress.
  • And resistance gauge 13 which turned to a diagonal direction (45 degrees direction) to the axial direction of axis of rotation 5 changes resistance value according to this shear stress, and strain sensor 1 changes according to change of resistance value. Output a signal.
  • the torque detector detects the torque applied to the rotating shaft 5 from the signal output from the strain sensor 1.
  • the plurality of strain sensors 1 are arranged on the rotating shaft 5 at equal intervals around the axis. Further, the four resistors constituting the full bridge circuit of the strain sensor 1 are arranged to face 45 degrees with respect to the axial direction of the rotary shaft 5.
  • FIGS. 6 and 7 show a case where two strain sensors 1a and 1b are disposed opposite to each other on the rotating shaft 5.
  • the stresses produced when torque is applied to the rotating shaft 5 are equal on the circumferential surface of the same radius. Therefore, the sum of the signals output by the two strain sensors 1 a and 1 b is twice as large as the signal output by the single strain sensor 1.
  • the thin portion 112 is formed by forming the groove portion 111 in the center of the back surface of the silicon layer 11, and the resistance gauge 13 is formed in the thin portion 112. Thereby, the stress can be concentrated on the thin portion 112 in which the resistance gauge 13 is formed, and the detection sensitivity to the torque applied to the rotating shaft 5 is improved.
  • the arrangement of the four resistance gauges 13 is not limited to the arrangement shown in FIG. 3, but may be an arrangement as shown in FIG. 8, for example.
  • a communication groove portion 113 may be formed, which communicates the groove portion 111 with the side surface of the silicon layer 11.
  • a temperature of about 400 ° C. is applied by anodic bonding. Therefore, when the communication groove portion 113 is not present, the air present in the groove portion 111 between the silicon layer 11 and the insulating layer 12 is sealed in a high temperature state at the time of anodic bonding, and when the temperature drops to normal temperature As a result, the thin-walled portion 112 may be deformed and the zero point of the strain sensor 1 may be displaced.
  • the communication groove portion 113 air present in the groove portion 111 can be released to the outside at the time of anodic bonding, and deformation of the thin portion 112 can be avoided.
  • the silicon layer 11 needs to be configured so as to be partially thinned by the groove portion 111 and the communication groove portion 113 so as not to be entirely thinned.
  • the silicon layer 11 was used as a board
  • substrate layer was shown in the above, it does not restrict to this, and should just be a member which distortion produces according to external force.
  • an insulator such as glass
  • the resistance gauge 13 is formed by depositing a film on the insulator by sputtering or the like.
  • the resistance gauge 13 is formed by sputtering the metal via an insulating film.
  • the silicon layer 11 may be used as a substrate layer, and the resistance gauge 13 may be formed on the silicon layer 11 by sputtering or the like.
  • the gauge factor is higher than that of a general metal strain gauge. Further, when the resistance gauge 13 is formed by film formation, the gauge ratio does not change depending on the crystal orientation as opposed to the case where the resistance gauge 13 is formed in the silicon layer 11 by ion implantation, that is, the direction needs to be limited. There is no On the other hand, the gauge factor is 4 to 10 times higher in the case where the resistance gauge 13 is formed by ion implantation in the silicon layer 11 than when the resistance gauge 13 is formed by film formation.
  • the strain sensor 1 In the above, the case of using a semiconductor strain gauge having a shape as shown in FIG. 2 as the strain sensor 1 is shown. However, the present invention is not limited to this, and semiconductor strain cages of other shapes may be used. In addition, as the strain sensor 1, another strain gauge (for example, a metal strain gauge) may be used.
  • the plurality of strain sensors 1 having the circuit including the plurality of resistance gauges 13 and attached to the rotating shaft 5 at equal intervals around the axis, and the plurality of strains Since the resistance gauge 13 is directed obliquely with respect to the axial direction of the rotating shaft 5, the torque is accurately measured even when another shaft load is applied. It can be detected and easily manufactured.
  • the torque detector according to the present invention can accurately detect a torque even when a load is applied to another shaft, can be easily manufactured, and is suitable for use as a torque detector that detects a torque applied to a rotating shaft. .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)

Abstract

La présente invention comprend : une pluralité de capteurs de contrainte (1) qui sont dotés d'un circuit comprenant une pluralité de jauges actives (13) et qui sont fixés à un corps d'arbre rotatif (5) à des intervalles égaux autour de son axe; et une unité de mesure (2) qui mesure la somme des sorties de la pluralité de capteurs de contrainte (1). Les jauges actives (13) sont inclinées par rapport à la direction axiale du corps d'arbre rotatif (5).
PCT/JP2018/034570 2017-10-03 2018-09-19 Détecteur de couple WO2019069683A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017193435A JP2019066374A (ja) 2017-10-03 2017-10-03 トルク検出器
JP2017-193435 2017-10-03

Publications (1)

Publication Number Publication Date
WO2019069683A1 true WO2019069683A1 (fr) 2019-04-11

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PCT/JP2018/034570 WO2019069683A1 (fr) 2017-10-03 2018-09-19 Détecteur de couple

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WO (1) WO2019069683A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7380981B2 (ja) * 2019-06-27 2023-11-15 ニデックドライブテクノロジー株式会社 トルク検出センサおよび動力伝達装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020056324A1 (en) * 2000-09-19 2002-05-16 Zlatko Penzar Mechanical/electrical transducer insensitive to bending and transverse forces
JP2002525599A (ja) * 1998-09-23 2002-08-13 マンネスマン ファウ デー オー アクチエンゲゼルシャフト 機械電気式トランスデューサ
EP1637856A2 (fr) * 2004-09-17 2006-03-22 Gtm Gassmann Theiss Messtechnik Gmbh Dispositif pour mesurer le moment de rotation
JP2006220574A (ja) * 2005-02-14 2006-08-24 Hitachi Ltd 回転体力学量測定装置および回転体力学量計測システム
US20140216173A1 (en) * 2011-08-10 2014-08-07 Isis Innovation Limited Determining torque in a shaft
WO2015190330A1 (fr) * 2014-06-09 2015-12-17 日立オートモティブシステムズ株式会社 Dispositif de détection de couple

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002525599A (ja) * 1998-09-23 2002-08-13 マンネスマン ファウ デー オー アクチエンゲゼルシャフト 機械電気式トランスデューサ
US20020056324A1 (en) * 2000-09-19 2002-05-16 Zlatko Penzar Mechanical/electrical transducer insensitive to bending and transverse forces
EP1637856A2 (fr) * 2004-09-17 2006-03-22 Gtm Gassmann Theiss Messtechnik Gmbh Dispositif pour mesurer le moment de rotation
JP2006220574A (ja) * 2005-02-14 2006-08-24 Hitachi Ltd 回転体力学量測定装置および回転体力学量計測システム
US20140216173A1 (en) * 2011-08-10 2014-08-07 Isis Innovation Limited Determining torque in a shaft
WO2015190330A1 (fr) * 2014-06-09 2015-12-17 日立オートモティブシステムズ株式会社 Dispositif de détection de couple

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