WO2019026955A1 - Cible de pulvérisation, procédé de formation de film d'oxyde semi-conducteur, et plaque de support - Google Patents

Cible de pulvérisation, procédé de formation de film d'oxyde semi-conducteur, et plaque de support Download PDF

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Publication number
WO2019026955A1
WO2019026955A1 PCT/JP2018/028843 JP2018028843W WO2019026955A1 WO 2019026955 A1 WO2019026955 A1 WO 2019026955A1 JP 2018028843 W JP2018028843 W JP 2018028843W WO 2019026955 A1 WO2019026955 A1 WO 2019026955A1
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sputtering target
sintered body
region
oxide sintered
target according
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PCT/JP2018/028843
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English (en)
Japanese (ja)
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暁 海上
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出光興産株式会社
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Priority to JP2019534557A priority Critical patent/JP7201595B2/ja
Priority to KR1020207000896A priority patent/KR102535445B1/ko
Priority to CN201880047311.XA priority patent/CN110892089B/zh
Publication of WO2019026955A1 publication Critical patent/WO2019026955A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]

Definitions

  • the present invention relates to a sputtering target, a method of forming an oxide semiconductor film, and a backing plate.
  • TFTs thin film transistors
  • amorphous silicon films or crystalline silicon films as the channel layers of TFTs are mainstream It is.
  • an oxide semiconductor attracts attention as a material used for a channel layer of a TFT.
  • an amorphous oxide semiconductor (In-Ga-Zn-O, hereinafter abbreviated as “IGZO”) composed of indium, gallium, zinc and oxygen disclosed in Patent Document 1 has a high carrier density. It is preferably used because it has mobility.
  • IGZO has the disadvantage that the raw material cost is high because In and Ga are used as the raw material.
  • ZTO Zn-Sn-O
  • ITZO In-Sn-Zn-O
  • a film is generally formed by magnetron sputtering using a sputtering target of the oxide semiconductor.
  • the depletion rate of the sputtering target depends on the density of the plasma, the strength of the magnetic field confining the plasma, the shape, and the movement of the magnet. Thus, the consumption rate of the sputtering target is not uniform in the target.
  • Patent Documents 4 to 6 a structure is proposed in which the portion where the wear rate of the sputtering target is fast is thickened.
  • the reliability referred to here is, for example, the cycle stability of the threshold voltage V th when an oxide semiconductor film is used for a channel layer of a transistor.
  • the cycle stability of the threshold voltage V th is said to be improved by film densification.
  • high power film formation is effective, in which sputtering power is increased at the time of film formation.
  • the target concentration in the target is higher than that in the other regions, so cracking of the target due to thermal stress becomes a problem.
  • a planar oscillating magnetron sputtering since the plasma always concentrates on the target end parallel to the oscillating direction of the magnetic field, it is necessary to prevent the target end from cracking.
  • patent documents 7-8 as a structure which prevents a crack of a sputtering target, a sputtering target is divided into a field (erosion field) where consumption progresses greatly by plasma, and the other field, and a gap is made between fields It is proposed to provide a structure that allows deformation due to thermal stress to escape to the gap.
  • the symbols in the formula (A) and the formula (B) are as follows.
  • E Elastic modulus of the sputtering target
  • ⁇ linear expansion coefficient of the sputtering target
  • ⁇ T temperature difference between the front and back of the sputtering target in the plate thickness direction
  • Q heat quantity passing from the front to the back of the sputtering target in the plate thickness direction
  • d plate of the sputtering target
  • Thickness A Area of sputtering target viewed from thickness direction
  • ⁇ Thermal conductivity of sputtering target
  • Patent Documents 9 to 11 disclose sputtering targets provided with inclined portions on the sputtering surface.
  • Patent Documents 4 to 8 have the following problems.
  • the thermal stress is increased, so there is a problem that the sputtering target is easily broken.
  • ITZO has a large linear expansion coefficient and a small thermal conductivity
  • magnetron sputtering has a problem that a crack is easily generated in a sputtering target due to thermal stress.
  • Patent Document 7 and Patent Document 8 When the techniques described in Patent Document 7 and Patent Document 8 are applied to planar-type oscillating magnetron sputtering, thermal stress is also generated in the erosion region, so the division structure of the erosion region can be used as a crack preventing structure only by dividing the erosion region. It was inadequate.
  • the inclined portion and the flat portion coexist on the sputtering surface, and the height and direction of the sputtering surface are not uniform, so the flying direction of the sputtered particles is different.
  • the discharge at the time of sputtering becomes unstable, and a problem that redeposit easily accumulates on the target surface.
  • a gap is generated between the ground shield and the target because both end portions of the target are inclined, and particles that are the cause of shorts are easily accumulated in the gap. is there.
  • the present invention prevents sputtering during film deposition without extremely shortening the target life, and provides a sputtering target capable of stable discharge, a method of depositing an oxide semiconductor film using the sputtering target, and a backing plate Intended to provide.
  • Another object of the present invention is a sputtering target capable of preventing a crack at the time of deposition without extremely shortening the target life and capable of performing a stable discharge, and depositing an oxide semiconductor film using the sputtering target It is an object to provide a method and backing plate.
  • the following sputtering target, a method of forming an oxide semiconductor film, and a backing plate are provided.
  • the oxide sintered body has a plurality of regions arranged in a first direction, The plurality of areas are an end area which is an area including an end in the first direction; An inner region, which is a second region inward, counting from the end toward the first direction; Have Assuming that the thickness of the end region is t 1 , the width of the end region in the first direction is L 1 , and the thickness of the inner region is t 2 , t 1 , L 1 , and t 2 are Sputtering target which satisfy
  • the plurality of areas are An intermediate region which is a third region inside counted from the end in the first direction,
  • the oxide sintered body a rectangular long side more than 2300 mm, 3800 mm or less, the short side is more than 200 mm, 300 mm or less, the inner region of the plate thickness t 2 is 9mm or more, 15 mm or less, L 1 is 10mm greater, 35 mm
  • Plate-like oxide sintered body A backing plate for holding the oxide sintered body; A spacer provided between the oxide sintered body and the backing plate;
  • the oxide sintered body has a plurality of regions arranged in a first direction, The plurality of areas includes an end area which is an area including an end in the first direction, and an inner area which is a second area inward counting from the end in the first direction.
  • the backing plate has a holding surface for holding the end area and the inner area,
  • the spacer is provided on the holding surface and holds the end region,
  • the end region has a back surface opposite to the holding surface,
  • the back surface of the end region is inclined with respect to the holding surface,
  • the slope of the back surface of the end region is a downward slope from the end of the oxide sintered body to the inside,
  • the maximum value of the plate thickness of the end region is t 11
  • the width in the first direction of the end region is L 11 t 11 and L 11 satisfy the following equation (12), Sputtering target.
  • the inner region has a back surface opposite to the holding surface, A portion of the back surface of the inner region is inclined with respect to the holding surface;
  • the slope of the back surface of the inner region is a slope downward from the end of the oxide sintered body,
  • a plate thickness of the inner region in the back surface of the inner region is set to t 12 in a non-inclined region,
  • the width of the inner region is the width of the inner region and the first direction width of the inclined region on the back surface of the inner region is L 13
  • t 11 , t 12 , t 15 , L 11 and L 13 satisfy the following formulas (11), (13), (14), (15) and (16),
  • the oxide sintered body has a rectangular long side of 2300 mm or more and 3800 mm or less, a short side of 200 mm or more and 300 mm or less, and a plate thickness of the inner region, in a region not inclined on the back surface of the inner region thickness t 12 is 9mm or more, 15 mm or less, L 11 is 10mm greater, less than 35 mm, a width of the first direction of the inner region is 170mm or more and 300mm or less, the sputtering target according to [10].
  • the oxide sintered body is in the form of a plate having two main surfaces, and the difference in height of one main surface in the thickness direction of the plurality of regions is within 100 ⁇ m, and the arithmetic average roughness Ra
  • the oxide sintered body has a thermal conductivity of 6.5 (W / m / K) or less.
  • the sputtering target according to any one of [1] to [17].
  • the oxide sintered body is an oxide containing indium element (In), tin element (Sn), and zinc element (Zn). target.
  • the oxide sintered body is The sputtering target according to [20], which comprises a spinel structure compound represented by Zn 2 SnO 4 .
  • the oscillation direction of the magnetic field is the first direction and the plate And depositing the oxide semiconductor film such that an end of the magnetic field in the first direction is located in the inner region.
  • a sputtering target capable of preventing cracking during film formation without extremely shortening the target life, a method of forming an oxide semiconductor film using the sputtering target, and a backing plate can be provided. Further, according to one embodiment of the present invention, a sputtering target capable of preventing a crack at the time of film formation and achieving a more stable discharge without extremely shortening the target life, and an oxide semiconductor film using the sputtering target And a backing plate can be provided.
  • film or “thin film” and the term “layer” can be interchanged with each other in some cases.
  • compound and the term “crystalline phase” can be mutually replaced in some cases.
  • a numerical range represented using “to” means a range including the numerical value described before “to” as the lower limit and the numerical value described after “to” as the upper limit. Do.
  • a sputtering target (sometimes referred to as a sputtering target according to a first aspect) according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.
  • a sputtering target a target used as a film material is exemplified in a magnetic field swing type magnetron sputtering apparatus for forming an oxide semiconductor film.
  • the sputtering target 1 includes an oxide sintered body 3.
  • the sputtering target 1 also comprises a backing plate 5.
  • the oxide sintered body 3 is a film material used when forming an oxide semiconductor film by sputtering film formation, and has a plate shape.
  • the oxide sintered body 3 is a plate having a rectangular planar shape.
  • the long side direction of the rectangle is the Y direction (first direction)
  • the plate thickness direction is the Z direction
  • the short side direction is the X direction (first direction and a direction orthogonal to the plate thickness direction, Direction).
  • the rectangular flat surface of the oxide sintered body 3 is described as a main surface, and the main surface on the side in contact with the backing plate 5 is referred to as “rear surface”, and the main surface on the side not in contact with the backing plate 5 Describe as "front side”.
  • the “front surface” may also be referred to as a sputtering surface.
  • the X direction is the direction in which the magnetic field oscillates in the magnetic field oscillation type magnetron sputtering apparatus.
  • the magnetic field M has a toroidal loop shape.
  • a plurality of loop shapes may be formed in the X direction, and the number is not limited (in the case of a plurality of loop shapes, the lengths in the Y direction are the same and the width in the X direction is narrow).
  • the width L M in the X direction is shorter than the width L x in the X direction of the oxide sintered body 3. Therefore, at the time of film formation, the magnetic field M oscillates (reciprocates) in the X direction so that the plasma comes in contact with the entire surface of the oxide sintered body 3 in the X direction.
  • the oxide sintered body 3 has end regions 7A and 7B, inner regions 9A and 9B, and an intermediate region 11 as a plurality of regions arranged in the Y direction.
  • the end regions 7A and 7B are regions including the end of the oxide sintered body 3 in the Y direction (sometimes referred to as the end of the sintered body).
  • the end regions 7A and 7B are respectively provided at both ends in the Y direction.
  • the inner regions 9A and 9B are the second regions inside counted from the end in the Y direction.
  • the inner regions 9A and 9B are respectively provided on both end sides in the Y direction.
  • the middle area 11 is a third area inside counted from the end in the Y direction.
  • each of the end area 7A, the inner area 9A, the inner area 9B, and the end area 7B has a rectangular planar shape, and the other two sides having two opposing sides parallel to the X direction and orthogonal to the sides Is parallel to the Y direction.
  • the end regions 7A and 7B, the inner regions 9A and 9B, and the middle region 11 are arranged separately from one another, and the oxide sintered body 3 is multi-divided. .
  • the intermediate region 11 is also divided into three regions 11A, 11B, and 11C along the Y direction. This is because, when each region is deformed by thermal stress generated at the time of sputtering, the deformed portion is released to the gap between the regions.
  • the regions 11A, 11B, and 11C are arranged in the order of the regions 11A, 11B, and 11C from the left in FIGS. 1 to 3.
  • Each of the regions 11A, 11B, and 11C has a rectangular planar shape, and the two opposing sides are parallel to the X direction, and the other two sides orthogonal to the sides are parallel to the Y direction.
  • the planar shapes of the end regions 7A and 7B, the inner regions 9A and 9B, and the middle region 11 are not limited to rectangles.
  • Size of the gap G 1 of the end region 7A, 7B and the inner region 9A, and 9B is not particularly limited.
  • the size of the gap G 1 is, for example, is about 0.1mm ⁇ 0.5mm.
  • Size of the gap G 2 between the inner region 9A, 9B and the intermediate region 11 is not particularly limited.
  • the size of the gap G 2 is, for example, is about 0.1mm ⁇ 0.5mm.
  • the thickness of the end regions 7A and 7B is t 1
  • the width of the end regions 7A and 7B in the Y direction is L 1
  • the thickness of the inner regions 9A and 9B is t 2 , t 1 , L 1 , and t 2 satisfies the following equations (1) to (4).
  • t 2 > t 1 (1)
  • the end region 7A when the sheet thickness in 7B is not constant, to the end region 7A, the minimum value of thickness within 7B plate thickness t 1.
  • the maximum value of the width in the Y direction in the regions is L 1 . If the inner region 9A, the plate thickness within 9B not constant, and the inner region 9A, the minimum value of thickness within 9B plate thickness t 2.
  • the reason for defining Formula (1) is as follows.
  • the magnetic field M oscillates in the X direction during film formation. It hardly swings in the Y direction. Therefore, the inner regions 9A, 9B and the end regions 7A, 7B are regions where the end of the magnetic field M is always located in the vicinity, and the upper surfaces of the inner regions 9A, 9B and the end regions 7A, 7B are other regions
  • the plasma confined in the magnetic field M is likely to be hotter than the upper surface of the.
  • the end regions 7A and 7B since the end surface 8 in the Y direction is not close to the other region, the lower surface of the end regions 7A and 7B is cooled by the backing plate 5 compared to the lower surface of the other regions. It is efficient and easy to get cold. Therefore, in the end regions 7A and 7B, the temperature difference in the thickness direction (.DELTA.T of the formula (B)) is larger than in the other regions, and cracking due to thermal stress is likely to occur. Accordingly, the end regions 7A, 7B, the better the plate thickness t 1 is thinner is preferable.
  • the inner regions 9A and 9B are regions where the plasma confined in the magnetic field M and the magnetic field M is always located at the time of film formation. Therefore, in order to extend the life of the sputtering target 1, who plate thickness t 2 is thick it is preferred.
  • the inner regions 9A and 9B are sandwiched between the end regions 7A and 7B and the middle region 11, and heat hardly escapes from the end surface, so the temperature difference in the plate thickness direction is the end regions 7A and 7B. It does not grow so much. Therefore, the inner regions 9A and 9B are less likely to be cracked than the end regions 7A and 7B even if the plate thickness is increased. Accordingly, the end regions 7A, 7B thickness t 1 of the inner region 9A, there pale needs than the thickness t 2 of 9B.
  • region which a plasma concentrates like the sputtering target 1 is also called EP (erosion pattern) shape target.
  • Formula (2) is preferably the following formula (2A), more preferably the following formula (2B), still more preferably the following formula (2C), and particularly preferably the following formula (2D) It is.
  • L 1 (formula (4)) When the L 1 too short end region 7A, too 7B becomes narrow, since the cracking due to thermal stress is likely to occur, there is also a lower limit to L 1 (formula (4)). It is more preferable that t 1 and L 1 satisfy the conditions shown in the following Formula (3A) and Formula (4A). t 1 (mm) ⁇ 8.5 (3A) 12.5 ⁇ L 1 (mm) ⁇ 32.5 (4A) It is more preferable that t 1 and L 1 satisfy the conditions shown in the following formulas (3B) and (4B). t 1 (mm) ⁇ 8 (3 B) 15 ⁇ L 1 (mm) ⁇ 30 (4 B)
  • t 1 and t 2 satisfy the following formula (5). 0.6 ⁇ t 1 / t 2 ⁇ 0.8 (5)
  • t 1 t 3 (6)
  • t 2 t 1 > t 3 (6)
  • the plate thickness in the intermediate region within 11 is not constant, the minimum value of the thickness in the region between the plate thickness t 3.
  • the specific dimensions of the oxide sintered body 3 are not particularly limited as long as they satisfy the formulas (1) to (4).
  • the following range may be mentioned.
  • the long side of the rectangle (L Y in FIG. 3) is preferably 2300 mm or more and 3800 mm or less.
  • the long side of the rectangle (L Y in FIG. 3) is more preferably 2500 mm or more and 3600 mm or less, and still more preferably 2500 mm or more and 3400 mm or less.
  • the short side of the rectangle (L x in FIG. 3) is preferably 200 mm or more and 300 mm or less.
  • the short side of the rectangle (L x in FIG. 3) is more preferably 230 mm or more and 300 mm or less, and still more preferably 250 mm or more and 300 mm or less.
  • Thickness t 2 is, 9 mm or more, preferably not more than 15 mm. Thickness t 2 is more preferably, 9 mm or more and 12mm or less, more preferably, 9 mm or more and 10mm or less.
  • L 1 is, 10 mm greater, preferably less than 35 mm, more preferably, 12.5 mm or more, or less 32.5 mm, more preferably, 15 mm or more and 30mm or less, 15 mm or more, and particularly preferably 20 mm.
  • the width L 3 (see FIG. 2) of the intermediate region 11 is preferably 1700 mm or more and 3500 mm or less.
  • the width L 3 (see FIG. 2) of the intermediate region 11 is more preferably 1900 mm or more and 3200 mm or less, and still more preferably 2000 mm or more and 3000 mm or less.
  • the width L 4 (see FIG. 2) of 11A, 11B, 11C is also not specified, but the number of divisions is usually 2 to 6 and L 4 is 250 mm or more, 1700 mm The following are preferred.
  • the width L 4 (see FIG. 2) of the regions 11A, 11B and 11C is more preferably 500 mm or more and 1200 mm or less, and still more preferably 600 mm or more and 1000 mm or less.
  • the sputtering target 1 When the sputtering target 1 is used for magnetic field oscillation type magnetron sputtering, L 1 and the end area 7 A, with reference to the X position, the position with the largest consumption during film deposition, and the consumption depth at that position, It is also possible to define the inner end of the 7B (X position P in FIG. 2).
  • the position with the largest consumption during film formation is referred to as the maximum erosion position.
  • the wear depth at the maximum erosion position is referred to as the maximum erosion depth.
  • the position of P is preferably a position where the wear depth is 50% or more and 75% or less of the maximum erosion depth.
  • the sputtering target 1 is less likely to be broken by setting the position to a wear depth of 50% or more.
  • the target life can be maintained by setting the wear depth to 75% or less.
  • the position of P is preferably 5 mm or more and 10 mm or less from the maximum erosion position toward the end in the X direction. By setting the position to 5 mm or more, the target life can be maintained. By setting the position to 10 mm or less, the sputtering target 1 becomes difficult to be broken.
  • the oxide sintered body 3 has a plate shape.
  • the oxide sintered body 3 has two main surfaces.
  • the difference in height in the thickness direction of the main surface (step) is as small as possible, and the arithmetic average roughness is smaller than that of the other main surfaces.
  • front surfaces 21A, 23A, and 25A are surfaces consumed by plasma during film formation, in order to prevent abnormal discharge, as many steps (concavity and convexity) as possible exist between the front surfaces 21A, 23A, and 25A. Preferably not.
  • back surfaces 21B, 23B, and 25B are fixed to the backing plate 5 with a brazing material or the like, the level difference (concave and convex) does not matter much. It is advantageous in cost if the back surface is not smoothed by polishing or the like.
  • the step between the front faces 21A, 23A, 25A is ideally zero. Specifically, as shown in FIG. 2, it is preferable that the front surfaces 21A, 23A, and 25A be located on the virtual plane 27 parallel to the XY plane. This condition is also referred to as "face-to-face". However, if the difference in height in the Z direction is 100 ⁇ m or less between the front surfaces 21A, 23A, and 25A, problems such as abnormal discharge can be prevented as in the case of the flush case.
  • the backing plate 5 is a member that holds and cools the oxide sintered body 3. As shown in FIG. 4, the backing plate 5 includes a main body 13 and spacers 17A and 17B.
  • the main body 13 is a plate-like member provided with a flow passage (not shown) through which cooling water and the like flow inside.
  • the main body 13 includes a holding surface 13A and a convex portion 15.
  • the material of the main body 13 is preferably a material having a high thermal conductivity from the viewpoint of cooling efficiency.
  • the material of the main body 13 is, for example, copper.
  • the holding surface 13A is a portion that contacts and holds the convex portion 15, the end regions 7A and 7B, and the spacers 17A and 17B.
  • the convex portion 15 is a member provided so as to protrude from the holding surface 13A.
  • the convex portion 15 is a member that contacts the intermediate region 11 and holds the intermediate region 11.
  • the protrusion 15 may be integral with the main body 13 or may be a separate plate-like member.
  • the planar shape of the convex portion 15 is preferably a shape corresponding to the planar shape of the intermediate region 11, and in the present embodiment, a rectangular shape is preferable.
  • the thickness t 4 (see FIG.
  • the spacers 17A and 17B are members for holding the end regions 7A and 7B.
  • As the spacers 17A and 17B a thin plate made of the same material as that of the main body 13, a wire made of metal, or the like is used.
  • the spacers 17A and 17B are respectively provided at both ends in the Y direction of the convex portion 15 so as to be separated from the convex portion 15.
  • the positions of the spacers 17A, 17B correspond to the end regions 7A, 7B.
  • the planar shape of the spacers 17A, 17B is preferably a shape corresponding to the end regions 7A, 7B.
  • the thickness t 5 (see FIG.
  • the oxide sintered body 3 is fixed to the backing plate 5 by brazing or the like.
  • the thickness of the metal wire and the thickness of the brazing material may be the same and used by brazing.
  • the middle area 11 is divided into three areas 11A, 11B, and 11C, the number of areas to be divided is not limited to three.
  • the number of areas constituting the intermediate area 11 may be two or four or more.
  • the sputtering target 101 which has the intermediate
  • the sputtering target 102 which concerns on a 2nd aspect, as shown in FIG. 6, without dividing
  • the convex portion 15 shown in FIG. 4 is not provided on the backing plate 5.
  • the end regions 7A, 7B, the inner regions 9A, 9B and the middle region 11 are separate but may be integral in part or all.
  • a sputtering target according to the second aspect as shown in FIG. 8, a sputtering having a structure in which the end regions 7A and 7B, the inner regions 9A and 9B, and the middle region 11 are integrated.
  • the target 104 is mentioned.
  • the sputtering target 105 which has the structure where inner area
  • FIG. 10 as another example of the sputtering target according to the second aspect, a sputtering having a structure in which the end area 7A and the inner area 9A are integrated and the end area 7B and the inner area 9B are integrated.
  • the target 106 is shown.
  • the end area 7A and the inner area 9A are integrated, and the end area 7B and the inner area 9B are integrated,
  • the sputtering target 107 which is a structure where the convex part 15 is not provided in the backing plate 5 is mentioned.
  • the back surface of the oxide sintered body 3 is substantially flat as in the sputtering target as shown in FIGS.
  • the back surface of the body 3 is an inclined surface. More specifically, in the oxide sintered body according to the third aspect, the back surface of the end region is inclined with respect to the holding surface, and the inclination of the back surface of the end region is the oxide sintered body It slopes inward from the end.
  • the back surface of the thus end region is, if having a slope with a descending slope toward the inside from the end portion of the oxide sintered body, the maximum thickness of the end regions and t 11, the end region If the width of the first direction is L 11, t 11, and L 11 preferably satisfy the following equation (12). t 11 (mm)> L 11 (mm) ⁇ 0.1 + 4 (12)
  • the back surface of the oxide sintered body since the back surface of the oxide sintered body is inclined, thickness reduction processing for stress reduction becomes possible without dividing the oxide sintered body.
  • the back surface of the oxide sintered body may be provided with a slope, and the surface of the oxide sintered body may have the same height without providing the slope. Therefore, no gap is generated between the ground shield and the sputtering target, and particles causing a short circuit can be prevented from entering the gap.
  • FIG. 12 shows a side view of a sputtering target 108 according to an example of the sputtering target according to the third aspect.
  • the sputtering target 108 has an inclination on the back surface, but the shape of the front surface is the same as that of the sputtering target 1 and the shape represented by the plan view of the sputtering target 1 shown in FIG. The same applies to 108.
  • the oxide sintered body 3 has end regions 7A and 7B, inner regions 9A and 9B, and an intermediate region 11.
  • the end area 7A and the inner area 9A are integrated, and the end area 7B and the inner area 9B are integrated, and the inner areas 9A, 9B and the intermediate area 11 are separated from each other.
  • the back surface 21B of the end region 7A of the sputtering target 108 is inclined in the Y direction. Also in the end region 7B, the back surface is inclined in the same manner as the back surface 21B. Since the back surfaces of the end regions 7A and 7B are inclined, the thickness of the end regions 7A and 7B gradually increases from the outside to the inside of the oxide sintered body 3 in the Y direction. Therefore, the effect of "it is easy to make power tolerance and life compatible" is produced.
  • the back surface of the inner regions 9A and 9B it is preferable that a part or the whole of the back surface of the inner regions 9A and 9B be inclined.
  • a part of the back surface of the inner regions 9A and 9B is inclined, more specifically, a part of the back surface on the end region 7A side of the inner region 9A is inclined and the end of the inner region 9B A part of the back surface on the side of the partial region 7B is inclined.
  • the back surface of the inner region 9A, 9B includes a back surface 23B substantially parallel to the holding surface 13A of the main body 13 of the backing plate 5, and a sloped back surface 23C.
  • the inclination angle of the inclined rear surface 23C of the inner region 9A is a holding surface 13A of the main body 13 of the backing plate 5, the angle theta 2 formed by the inclined rear surface 23C of the inner region 9A, theta 2 is 4 times more than 15 degrees below It is preferable that the temperature be 5 degrees or more and 12 degrees or less.
  • the same inclination angle as that of the inner region 9A is preferable for the inner region 9B.
  • the inclination of the back surface of the end region 7A and the inclination of the back surface of the inner region 9A are continuously inclined from the outside to the inside of the oxide sintered body 3 (the inclination angle is constant Is preferred).
  • the inclination of the back surface of the end region 7B and the inclination of the back surface of the inner region 9B is preferably inclined continuously (the inclination angle is constant).
  • the surfaces of the spacers 17A and 17B (end spacers) corresponding to the end regions 7A and 7B in contact with the oxide sintered body 3 have an inclination corresponding to the back surfaces of the end regions 7A and 7B. Is preferred. Further, since the inner regions 9A and 9B also have a slope on the back surface, it is preferable to provide a spacer (inner spacer) having a slope corresponding to the back surface slope of the inner regions 9A and 9B on the holding surface 13A.
  • the end spacer and the inner spacer may be integral or separate.
  • the front surfaces 21A, 23A, and 25A be positioned on the virtual plane 27 parallel to the XY plane ("coplanar").
  • the difference in height in the Z direction is 100 ⁇ m or less, problems such as abnormal discharge can be prevented as in the case of the flush case.
  • End region 7A the maximum value of the thickness of 7B and t 11
  • End region 7A the minimum value of the thickness of 7B and t 15
  • the width in the Y direction of the end regions 7A, 7B be L 11
  • the width of the inner region is the width of the inner region and the first direction width of the inclined region on the back surface of the inner region is L 13
  • t 11 , t 12 , t 15 , L 11 and L 13 satisfy the following formulas (11), (13), (14), (15) and (16), and t More preferably, 11 , t 12 , t 15 , L 11 and L 13 satisfy the formulas (11) to (16).
  • the minimum value of the thickness in the region where the back surface is not inclined is and the thickness t 12.
  • the end region 7A, an end region 7A of the outer end surface 18 of 7B, 7B thickness corresponds to t 15, the end region 7A, an end region 7A of 7B of the inner end face 28, 7B thickness There corresponds to t 11.
  • a sputtering target becomes difficult to be broken at the time of sputtering discharge by satisfy
  • the sputtering target can achieve both the power tolerance and the target life (TG life) by satisfying the equation (16).
  • Formula (16) is preferably the following formula (16A). 5 ⁇ L 13 (mm) ⁇ 35 (16A)
  • the sputtering target can achieve both of the power tolerance and the target life (TG life) by satisfying the formula (11).
  • regulates Formula (11) is as follows.
  • the magnetic field M oscillates in the X direction during film formation. It hardly swings in the Y direction. Therefore, the inner regions 9A, 9B and the end regions 7A, 7B are the regions where the end of the magnetic field M is always located in the vicinity, and the upper surfaces of the inner regions 9A, 9B and the end regions 7A, 7B ) Is likely to be hot due to the plasma confined in the magnetic field M, as compared to the upper surface (front surface) of the other regions.
  • the outer end face 18 in the Y direction is not close to the other regions, so the lower surface of the end regions 7A and 7B is compared to the lower surface of the other regions by the backing plate 5 It has good cooling efficiency and tends to be low temperature. Therefore, in the end regions 7A and 7B, the temperature difference in the thickness direction (.DELTA.T of the formula (B)) is larger than in the other regions, and cracking due to thermal stress is likely to occur. Accordingly, the end regions 7A, t 11 of 7B are preferably thin.
  • the inner regions 9A and 9B are regions where the plasma confined in the magnetic field M and the magnetic field M is always located during film formation. Therefore, in order to extend the life of the sputtering target 108, who plate thickness t 12 is thick it is preferred.
  • the inner regions 9A and 9B are sandwiched between the end regions 7A and 7B and the middle region 11, and heat hardly escapes from the end surface, so the temperature difference in the plate thickness direction is the end regions 7A and 7B. It does not grow so much. Therefore, the inner regions 9A and 9B are less likely to be cracked than the end regions 7A and 7B even if the plate thickness is increased. Accordingly, the end regions 7A, 7B of the plate thickness t 11, the inner region 9A, is preferably thinner than the thickness t 12 of 9B.
  • a target in which a region where plasma is concentrated is thickened like the sputtering target 108 is also referred to as an EP (erosion pattern) shape target.
  • Equation (12) is preferably the following formula (12A), more preferably the following formula (12B), still more preferably the following formula (12C), and particularly preferably the following formula (12D) It is.
  • t 11 and L 11 satisfy the conditions shown in the following Formula (13A) and Formula (14A). t 11 (mm) ⁇ 8.5 ... (13A) 12.5 ⁇ L 11 (mm) ⁇ 32.5 (14A)
  • t 11 and L 11 satisfy the conditions shown in the following Formula (13B) and Formula (14B).
  • the plate thickness in the intermediate region within 11 is not constant, the minimum value of the thickness in the region between the plate thickness t 13.
  • the specific dimension of the oxide sintered body 3 according to the third aspect is not particularly limited as long as the formula (12) is satisfied.
  • the following range may be mentioned.
  • a rectangular long side (corresponding to L Y in Fig. 3.) Is more than 2300 mm, preferably not more than 3800 mm.
  • the long side of the rectangle (corresponding to L Y in FIG. 3) is more preferably 2500 mm or more and 3600 mm or less, and still more preferably 2500 mm or more and 3400 mm or less.
  • the short side of the rectangle (corresponding to L x in FIG. 3) is preferably 200 mm or more and 300 mm or less.
  • a rectangular shorter side (corresponding to the L x in FIG. 3.) Is more preferably more than 230 mm, and a 300mm or less, more preferably, 250 mm or more and 300mm or less.
  • Thickness t 12 is, 9 mm or more, preferably not more than 15 mm. Thickness t 12 is more preferably, 9 mm or more and 12mm or less, more preferably, 9 mm or more and 10mm or less.
  • L 11 is preferably more than 10 mm and less than 35 mm, more preferably 12.5 mm or more and 32.5 mm or less, still more preferably 15 mm or more and 30 mm or less, and particularly preferably 15 mm or more and 20 mm or less.
  • the width L 12 in the Y direction (first direction) of the inner regions 9A and 9B is more preferably 180 mm or more and 300 mm or less, and still more preferably 185 mm or more and 300 mm or less.
  • the width L 13 and a width L 12, satisfy the relationship of L 12 ⁇ L 13, it is preferable to satisfy the relationship of L 12> L 13.
  • the width L 14 (see FIG. 12) of the intermediate region 11 is preferably 1700 mm or more and 3500 mm or less.
  • the width L 14 (see FIG. 12) of the intermediate region 11 is more preferably 1900 mm or more and 3200 mm or less, and still more preferably 2000 mm or more and 3000 mm or less.
  • Regions 11A, 11B, 11C width L 15 is, 250 mm or more, preferably not more than 1700 mm.
  • the width L 15 (see FIG. 12) of the regions 11A, 11B, and 11C is more preferably 500 mm or more and 1200 mm or less, and still more preferably 600 mm or more and 1000 mm or less.
  • the sputtering target 108 When the sputtering target 108 is used for magnetic field swing type magnetron sputtering, L 11 and the end area 7 A, based on the position where the film consumption is largest during film formation and the wear depth at that position in the X direction, It is also possible to define the inner end (X-direction position P in FIG. 12) of 7B.
  • the position with the largest consumption during film formation is referred to as the maximum erosion position.
  • the wear depth at the maximum erosion position is referred to as the maximum erosion depth.
  • the position of P is preferably a position where the wear depth is 50% or more and 75% or less of the maximum erosion depth.
  • the position of P is preferably 10 mm or more and 30 mm or less from the maximum erosion position toward the end in the X direction. By setting the position to 10 mm or more, the target life can be maintained. By setting the position to 30 mm or less, the sputtering target 108 is less likely to be broken.
  • Size of the gap G 2 between the inner region 9A, 9B and the intermediate region 11 of the sputtering target 108 is not particularly limited.
  • the size of the gap G 2 is, for example, is about 0.1mm ⁇ 0.5mm.
  • compositions, crystal structure and physical properties of sputtering target Next, the composition and the crystal structure of the sputtering target 1 according to the embodiment of the present invention will be described.
  • the composition of the sputtering target 1 and the crystal structure are not particularly limited.
  • an oxide having a large coefficient of linear expansion and a small thermal conductivity, which causes a problem of cracking when forming a film using a magnetic field swing type magnetron sputtering apparatus A sputtering target containing a sintered body is preferable.
  • the oxide sintered body is made of an oxide containing indium element (In), tin element (Sn) and zinc element (Zn), and is a sintered body containing a spinel structure compound represented by Zn 2 SnO 4 The body is effective. Furthermore, as the oxide sintered body, In 2 O 3 (ZnO) m [wherein, m is an integer of 2 to 7]. A sintered body which also contains a hexagonal layered compound represented by the formula is more effective. The crystal structure of the sputtering target can be confirmed by an X-ray diffraction measurement apparatus (XRD).
  • XRD X-ray diffraction measurement apparatus
  • the hexagonal layered compound composed of indium oxide and zinc oxide is a compound showing an X-ray diffraction pattern belonging to the hexagonal layered compound in the measurement by the X-ray diffraction method. Specifically, it is a compound represented by In 2 O 3 (ZnO) m . M in the formula is an integer of 2 to 7, preferably 3 to 5. If m is 2 or more, the compound has a hexagonal layered structure, and if m is 7 or less, the volume resistivity can be lowered. It is preferable that in the oxide sintered body, the atomic ratio of each element satisfies the following formula (7). 0.40 ⁇ Zn / (In + Sn + Zn) ⁇ 0.80 (7)
  • Zn / (In + Sn + Zn) When sputtering deposition is performed, if Zn / (In + Sn + Zn) is 0.4 or more, a spinel phase is easily generated in the oxide sintered body, and characteristics as a semiconductor can be easily obtained. If Zn / (In + Sn + Zn) is 0.80 or less, a reduction in strength due to abnormal grain growth of the spinel phase can be suppressed in the oxide sintered body. In addition, when Zn / (In + Sn + Zn) is 0.80 or less, a decrease in mobility of the oxide semiconductor film can be suppressed. Zn / (In + Sn + Zn) is more preferably 0.50 or more and 0.70 or less. It is preferable that in the oxide sintered body, the atomic ratio of each element satisfies the following formula (8). 0.15 ⁇ Sn / (Sn + Zn) ⁇ 0.40 (8)
  • Sn / (Sn + Zn) The fall of the intensity
  • the atomic ratio of each element satisfies the following formula (9). 0.10 ⁇ In / (In + Sn + Zn) ⁇ 0.35 (9)
  • In / (In + Sn + Zn) is 0.10 or more, the bulk resistance of the obtained sputtering target can be lowered.
  • extremely low mobility of the oxide semiconductor film can be suppressed.
  • In / (In + Sn + Zn) is 0.35 or less, when the film is formed by sputtering, the film can be prevented from becoming a conductor, and it becomes easy to obtain the characteristics as a semiconductor. More preferably, In / (In + Sn + Zn) is 0.10 or more and 0.30 or less.
  • the atomic ratio of each metal element of the oxide sintered body can be controlled by the blending amount of the raw material.
  • the atomic ratio of each element can be determined by quantitatively analyzing the contained element with an inductively coupled plasma emission spectrometer (ICP-AES).
  • the average value of the bending strength at 30 points is preferably 320 MPa or less, and more preferably 300 MPa or less.
  • the minimum value of the bending strength at 30 points is preferably 200 MPa or less, and more preferably 180 MPa or less.
  • the bending strength of the oxide sintered body is measured by equally cutting out a 3 mm ⁇ 4 mm ⁇ 40 mm test piece from one tile of the oxide sintered body and carrying out a 3-point bending test in accordance with JIS R 1601. it can. The bending strength was measured for 30 test pieces, and the average value and the minimum value were calculated.
  • the oxide sintered body preferably has a linear expansion coefficient of 7.50 ⁇ 10 ⁇ 6 / K or more, more preferably 7.7 ⁇ 10 ⁇ 6 / K or more.
  • the linear expansion coefficient of the oxide sintered body can be measured by measuring it at a measurement temperature of 30 ° C. to 500 ° C., a temperature rising rate of 10 K / min, and in the atmosphere according to the JIS R 1618 method.
  • the elastic modulus of the oxide sintered body is preferably 150 GPa or more, and more preferably 155 GPa.
  • the elastic modulus of the oxide sintered body can be measured by using an ultrasonic flaw detector according to the JIS R 1602 method at room temperature in the air.
  • the thermal conductivity of the oxide sintered body is preferably 6.5 (W / m / K) or less, and more preferably 6.0 (W / m / K) or less.
  • the thermal conductivity of the oxide sintered body is measured by the laser flash method (at room temperature, in vacuum) and the thermal diffusivity by the laser flash method (at room temperature, in the air) according to JIS R 1611 method. It measured and heat conductivity was computed from the following formula.
  • ⁇ (thermal conductivity) Cp (specific heat capacity) ⁇ ⁇ (density) ⁇ ⁇ (thermal diffusivity) ⁇ is the density of the oxide sintered body.
  • the density of the oxide sintered body was calculated from the size and weight of the thermal conductivity measurement sample.
  • the oxide sintered body preferably has a coefficient of linear expansion ⁇ elastic modulus / thermal conductivity of 200 Pa / W or more, and more preferably 220 Pa / W or more.
  • composition, crystal structure, and physical properties of the sputtering target 1 according to the embodiment of the present invention.
  • the description of the composition, crystal structure and physical properties of the sputtering target 1 can be applied to the sputtering targets according to the second and third aspects.
  • the film-forming method of the oxide semiconductor film using the sputtering target 1 which concerns on this embodiment is demonstrated easily.
  • the film forming method is not particularly limited.
  • the sputtering target 1 is suitable for film formation using a magnetic field oscillation type magnetron sputtering apparatus as a film formation apparatus. Specifically, film formation is performed such that the swing direction of the magnetic field M is the X direction, and the end of the magnetic field M in the Y direction is located from the inner area 9A to the end area 7A and from the inner area 9B to the end area 7B. Do. According to this method, the most thickness t 2 is thicker inner region 9A, since the plasma is concentrated to 9B, it can be secured target life.
  • the plate-like oxide sintered body 3 having the end regions 7A and 7B and the inner regions 9A and 9B arranged in the Y direction is provided, and t 1 , L 1 , and t 1 t 2 satisfies the expressions (1) to (4). Therefore, it is possible to prevent cracking during film formation without extremely shortening the target life.
  • the sputtering target 1A As a sputtering target, a known ITZO-based sputtering target 1A shown in FIG. 13 was assumed. Unlike the sputtering target 1 shown in FIG. 1, the sputtering target 1A has a comparison end area 31 at an end corresponding to an area obtained by combining the end areas 7A and 7B and the inner areas 9A and 9B.
  • Sputtering target 1A has a density of 6.39 g / cm 3 , Poisson's ratio of 0.28, elastic modulus (E) of 158 GPa, linear expansion coefficient ( ⁇ ) of 7.7 ⁇ 10 -6 / K, thermal conductivity ( ⁇ ) ) was 4.87 W / m / K, and the specific heat was 416 J / kg / ° C.
  • the total length L x in the X direction is 272 mm
  • the total length L Y in the Y direction is 2525 mm
  • the plate thickness t 2 of the comparison end area 31 is 9 mm
  • the Y direction length of the comparison end area 31 is 200 mm
  • the thickness t 3 of the intermediate region 11 and 6 mm is the thickness of the intermediate region 11 and 6 mm.
  • the magnetic field M is 0.1 mm / s between both ends in the X direction Was moved back and forth (rocking).
  • the sputtering power was 16 kW, and the heat transfer coefficient was 5800 W / m 2 / K.
  • the temperature difference in the thickness direction of the sputtering target 1A after holding for 2000 seconds under this condition is calculated by the finite element method, the thermal stress is determined using the formula (A) and the formula (B), and the relative distribution is calculated did.
  • the symbols in the formula (A) and the formula (B) are as follows.
  • E Elastic modulus of sputtering target (GPa) ⁇ : linear expansion coefficient of sputtering target (10 -6 / K) ⁇ T: temperature difference between the front and back of the sputtering target in the thickness direction (K) Q: Heat amount passing from front to back of sputtering target in the thickness direction (W) d: Thickness of sputtering target (mm) A: The area of the sputtering target (mm 2 ) viewed from the thickness direction ⁇ : Thermal conductivity of sputtering target (W / m / K)
  • the thickness t 1 thinner than the plate thickness t 2 the other dimensions to produce the same sputtering target 1 and preliminary test (Sample No. 2), the actual device of the magnetron sputtering apparatus The power tolerance and the target life (life) were measured under the same conditions as in the preliminary test.
  • L 1 is 15mm
  • L 2 is set to 185mm.
  • Power tolerance is the sputter power to the maximum extent that the sputtering target does not crack. It was determined that cracking occurred when arcing occurred in the sputtering target. The life is calculated by multiplying the power tolerance by the time required for the remaining thickness of the sputtering target to reach 1 mm (here the unit is [hr]), and the life of the sputtering target under the same conditions as in the preliminary test, It was the ratio based on 100%. The results are shown in Table 1. Table 1 also shows the case where the thickness of the sputtering target is made uniform to 6 mm (Sample No. 3) as a comparative example. The sputtering target of the preliminary test is shown in Table 1 as Sample No. 1.
  • the region with the deepest erosion depth was an inner region of more than 15 mm and about 30 mm or less from the end in the Y direction. This is in the range of the inner regions 9A, 9B. Also, the area of 15 mm or less from the end in the Y direction had a wear depth of 75% or less of the maximum erosion depth, and the majority was 50% or less.
  • ITZO-based sputtering targets having inclinations on the back surfaces of the end regions 7A and 7B and the inner regions 9A and 9B and satisfying the dimensions shown in Table 3 were produced.
  • the angles of inclination and the dimensions other than those shown in Table 3 were prepared in the same manner as the preliminary test described above.
  • About the produced sputtering target, power tolerance and the target life (life) were measured on the same conditions as a preliminary test with the magnetron sputter apparatus of a real machine.
  • the power resistance and the target life (life) of the sputtering targets of the sample numbers shown in Table 3 were evaluated using the same evaluation criteria as those of the above-mentioned “power resistance and life test 1”.
  • the evaluation results are shown in Tables 3 and 4.
  • sample number 28 a sample having an inclination angle of 0 ° and the back surface of the end region not being inclined was used.
  • Table 3 the cases where the expressions (11) to (16) are satisfied are denoted as “A”, and the cases where the expressions are not satisfied are denoted as “B”.
  • the back surface of the end region has a downward slope toward the inside from the end of the oxide sintered body, and By satisfying the relationship, the power tolerance and the target life (life) were passed. Furthermore, the target life (life) was improved by the inclination angle of the end region being 10 degrees or more and 12 degrees or less as in the sample numbers 26 and 27.

Abstract

La présente invention concerne une cible de pulvérisation cathodique (1) dans laquelle un corps fritté d'oxyde en forme de plaque (3) comporte une pluralité de régions disposées dans la direction Y ; la pluralité de régions ont des régions d'extrémité (7A, 7B), dont chacune est une région contenant une extrémité dans la direction Y, et des régions internes (9A, 9B), dont chacune est une deuxième région vers l'intérieur en comptant depuis l'extrémité dans la direction Y ; et, lors de la définition de t1 comme étant l'épaisseur de plaque de la région d'extrémité (7A, 7B), L1 comme étant la largeur dans la direction Y de la région d'extrémité (7A, 7B), et t2 comme étant l'épaisseur de plaque de la région interne (9A, 9B), t1, L1, et t2 satisfont aux formules (1) à (4). (1): t2 > t1 (2) : t1 (mm) > L1 (mm) × 0,1 + 4 (3) : t1 (mm) < 9 (4) : 10 < L1 (mm) < 35
PCT/JP2018/028843 2017-08-01 2018-08-01 Cible de pulvérisation, procédé de formation de film d'oxyde semi-conducteur, et plaque de support WO2019026955A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019534557A JP7201595B2 (ja) 2017-08-01 2018-08-01 スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート
KR1020207000896A KR102535445B1 (ko) 2017-08-01 2018-08-01 스퍼터링 타깃, 산화물 반도체막의 성막 방법 및 배킹 플레이트
CN201880047311.XA CN110892089B (zh) 2017-08-01 2018-08-01 溅射靶、氧化物半导体膜的成膜方法以及背板

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CN110892089A (zh) 2020-03-17
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