WO2018152874A1 - 一种阵列基板及阵列基板的制作方法 - Google Patents
一种阵列基板及阵列基板的制作方法 Download PDFInfo
- Publication number
- WO2018152874A1 WO2018152874A1 PCT/CN2017/076317 CN2017076317W WO2018152874A1 WO 2018152874 A1 WO2018152874 A1 WO 2018152874A1 CN 2017076317 W CN2017076317 W CN 2017076317W WO 2018152874 A1 WO2018152874 A1 WO 2018152874A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal layer
- substrate
- layer
- projection
- thin film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 175
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 192
- 230000004888 barrier function Effects 0.000 claims abstract description 60
- 230000003071 parasitic effect Effects 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims description 49
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 9
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Definitions
- the barrier layer is an inorganic material or an organic insulating material.
- FIG. 3 is a schematic structural view of a second preferred embodiment of the array substrate of the present invention.
- the thickness of the barrier layer 206 on the array substrate is between 3 micrometers and 5 micrometers; the barrier layer 206 on the array substrate is an inorganic material or an organic insulating material.
- the projection of the first metal layer 202 and the second metal layer 205 on the array substrate on the substrate substrate 201 coincides with the projection of the barrier layer 206 on the substrate substrate 201.
- the array substrate of the preferred embodiment increases the distance between the first metal layer 202 and the second metal layer 205 at the intersection 208 of the first metal layer 202 and the second metal layer 205 by providing the barrier layer 206, thereby reducing the distance between the first metal layer 202 and the second metal layer 205.
- the capacitance value of the parasitic capacitance formed by the first metal layer 202 and the second metal layer 205 increases the charging rate of the pixel, thereby improving the display effect and quality of the liquid crystal display.
- FIG. 4 is a schematic diagram of a process flow of a method for fabricating an array substrate according to the present invention.
- the embodiment of the invention further provides a method for fabricating the above array substrate, comprising:
- the base substrate includes a first region and a second region, and the projection of the thin film transistor on the substrate substrate coincides with the first region, and the projection of the barrier layer on the substrate is coincident with the second region.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (16)
- 一种阵列基板,其包括:衬底基板;第一金属层,设置在所述衬底基板上,用以形成扫描线以及薄膜晶体管的栅极;第一绝缘层,设置在所述第一金属层上,用以隔离所述第一金属层以及有源层;所述有源层,设置在所述第一绝缘层上,用以形成所述薄膜晶体管的导电沟道;第二金属层,设置在所述有源层上,用以形成数据线、所述薄膜晶体管的源极以及所述薄膜晶体管的漏极;以及,阻隔层,设置在所述第一绝缘层与所述第二金属层之间,用以增加所述第一金属层与所述第二金属层交叠处的所述第一金属层与所述第二金属层之间的距离,降低所述第一金属层与所述第二金属层形成的寄生电容的电容值;所述第一金属层与所述第二金属层交叠处在所述衬底基板上的投影位于所述阻隔层在所述衬底基板的投影内;所述阻隔层的厚度介于3微米至5微米之间。
- 根据权利要求1所述的阵列基板,其中所述第一金属层与所述第二金属层交叠处在所述衬底基板上的投影与所述阻隔层在所述衬底基板上的投影重合。
- 根据权利要求1所述的阵列基板,其中所述衬底基板包括第一区域以及第二区域,所述薄膜晶体管在所述衬底基板上的投影与所述第一区域重合,所述阻隔层在所述衬底基板上的投影与所述第二区域重合。
- 根据权利要求1所述的阵列基板,其中所述阻隔层为无机材料或有机绝缘材料。
- 一种阵列基板,其包括:衬底基板;第一金属层,设置在所述衬底基板上,用以形成扫描线以及薄膜晶体管的栅极;第一绝缘层,设置在所述第一金属层上,用以隔离所述第一金属层以及有源层;所述有源层,设置在所述第一绝缘层上,用以形成所述薄膜晶体管的导电沟道;第二金属层,设置在所述有源层上,用以形成数据线、所述薄膜晶体管的源极以及所述薄膜晶体管的漏极;以及,阻隔层,设置在所述第一绝缘层与所述第二金属层之间,用以增加所述第一金属层与所述第二金属层交叠处的所述第一金属层与所述第二金属层之间的距离,降低所述第一金属层与所述第二金属层形成的寄生电容的电容值。
- 根据权利要求5所述的阵列基板,其中所述第一金属层与所述第二金属层交叠处在所述衬底基板上的投影位于所述阻隔层在所述衬底基板的投影内。
- 根据权利要求6所述的阵列基板,其中所述第一金属层与所述第二金属层交叠处在所述衬底基板上的投影与所述阻隔层在所述衬底基板上的投影重合。
- 根据权利要求6所述的阵列基板,其中所述衬底基板包括第一区域以及第二区域,所述薄膜晶体管在所述衬底基板上的投影与所述第一区域重合,所述阻隔层在所述衬底基板上的投影与所述第二区域重合。
- 根据权利要求5所述的阵列基板,其中所述阻隔层的厚度介于3微米至5微米之间。
- 根据权利要求5所述的阵列基板,其中所述阻隔层为无机材料或有机绝缘材料。
- 一种阵列基板的制作方法,其包括:在衬底基板上沉积第一金属层,并通过构图工艺形成扫描线以及薄膜晶体管的栅极;在所述第一金属层上沉积第一绝缘层;在所述第一绝缘层沉积有源层,并通过构图工艺形成所述薄膜晶体管的导电沟道;在所述有源层上沉积第二金属层,并通过构图工艺形成数据线、所述薄膜晶体管的源极以及所述薄膜晶体管的漏极;以及,在所述第一绝缘层与所述第二金属层之间形成一阻隔层,用以增加所述第一金属层与所述第二金属层交接区域的距离,降低所述第一金属层与所述第二金属层形成的寄生电容的电容值。
- 根据权利要求11所述的阵列基板的制作方法,其特征在于,所述第一金属层与所述第二金属层交叠处在所述衬底基板上的投影位于所述阻隔层在所述衬底基板的投影内。
- 根据权利要求12所述的阵列基板的制作方法,其特征在于,所述第一金属层与所述第二金属层交接区域在所述衬底基板上的投影区域与所述阻隔层在所述衬底基板上的投影区域重合。
- 根据权利要求12所述的阵列基板的制作方法,其特征在于,所述衬底基板包括第一区域以及第二区域,所述薄膜晶体管在所述衬底基板上的投影与所述第一区域重合,所述阻隔层在所述衬底基板上的投影与所述第二区域重合。
- 根据权利要求11所述的阵列基板的制作方法,其中所述阻隔层的厚度介于3微米至5微米之间。
- 根据权利要求11所述的阵列基板的制作方法,其中所述阻隔层为无机材料或有机绝缘材料。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020197026096A KR20190110617A (ko) | 2017-02-22 | 2017-03-10 | 어레이 기판 및 어레이 기판의 제작 방법 |
EP17898038.9A EP3588563A4 (en) | 2017-02-22 | 2017-03-10 | NETWORK SUBSTRATE AND ITS MANUFACTURING PROCESS |
US15/521,442 US20180277568A1 (en) | 2017-02-22 | 2017-03-10 | Array substrate and manufacturing method therefor |
JP2019539282A JP6828175B2 (ja) | 2017-02-22 | 2017-03-10 | アレイ基板及びアレイ基板の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710098323.2 | 2017-02-22 | ||
CN201710098323.2A CN106847829A (zh) | 2017-02-22 | 2017-02-22 | 一种阵列基板及阵列基板的制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018152874A1 true WO2018152874A1 (zh) | 2018-08-30 |
Family
ID=59134089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2017/076317 WO2018152874A1 (zh) | 2017-02-22 | 2017-03-10 | 一种阵列基板及阵列基板的制作方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180277568A1 (zh) |
EP (1) | EP3588563A4 (zh) |
JP (1) | JP6828175B2 (zh) |
KR (1) | KR20190110617A (zh) |
CN (1) | CN106847829A (zh) |
WO (1) | WO2018152874A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102008418B1 (ko) * | 2017-08-17 | 2019-08-09 | 전자부품연구원 | 중첩 전하 용량 감소를 위한 표시 패널 및 이의 제조 방법 |
CN109254461A (zh) * | 2018-10-22 | 2019-01-22 | 惠科股份有限公司 | 显示面板和显示器 |
US10761388B2 (en) | 2018-10-22 | 2020-09-01 | HKC Corporation Limited | Display panel and display |
CN109872690B (zh) * | 2019-03-27 | 2020-09-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
CN114779543B (zh) * | 2022-04-02 | 2023-09-26 | Tcl华星光电技术有限公司 | 显示面板及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101442056A (zh) * | 2007-11-23 | 2009-05-27 | 胜华科技股份有限公司 | 像素阵列基板 |
CN101577248A (zh) * | 2009-06-12 | 2009-11-11 | 友达光电股份有限公司 | 阵列基板及其形成方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07119915B2 (ja) * | 1989-01-27 | 1995-12-20 | 日本電気株式会社 | 薄膜電界効果型トランジスタ素子アレイ |
US5631473A (en) * | 1995-06-21 | 1997-05-20 | General Electric Company | Solid state array with supplemental dielectric layer crossover structure |
JPH09101542A (ja) * | 1995-10-05 | 1997-04-15 | Toshiba Corp | 表示装置用アレイ基板及びその製造方法 |
JP2001332499A (ja) * | 2000-05-19 | 2001-11-30 | Seiko Epson Corp | 電極基板の製造方法及び電気光学装置の製造方法並びにこれらの製造方法により製造された電極基板及び電気光学装置 |
US7538827B2 (en) * | 2005-11-17 | 2009-05-26 | Chunghwa Picture Tubes, Ltd. | Pixel structure |
JP4351695B2 (ja) * | 2006-11-27 | 2009-10-28 | エルジー ディスプレイ カンパニー リミテッド | 有機el表示装置 |
US8546161B2 (en) * | 2010-09-13 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and liquid crystal display device |
WO2012060362A1 (ja) * | 2010-11-04 | 2012-05-10 | シャープ株式会社 | 半導体装置、表示装置、ならびに半導体装置および表示装置の製造方法 |
TWI534905B (zh) * | 2010-12-10 | 2016-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置及顯示裝置之製造方法 |
KR101830179B1 (ko) * | 2011-11-03 | 2018-02-21 | 삼성디스플레이 주식회사 | 유기 전계 발광 표시 장치 |
KR102284754B1 (ko) * | 2014-10-27 | 2021-08-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치 |
US10403646B2 (en) * | 2015-02-20 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102326555B1 (ko) * | 2015-04-29 | 2021-11-17 | 삼성디스플레이 주식회사 | 표시장치 |
CN106229298B (zh) * | 2016-08-17 | 2018-12-11 | 武汉华星光电技术有限公司 | 一种阵列基板及其制作方法 |
CN106205492B (zh) * | 2016-09-13 | 2019-07-02 | 深圳市华星光电技术有限公司 | Amoled驱动电路结构及其制作方法 |
-
2017
- 2017-02-22 CN CN201710098323.2A patent/CN106847829A/zh active Pending
- 2017-03-10 KR KR1020197026096A patent/KR20190110617A/ko not_active Application Discontinuation
- 2017-03-10 US US15/521,442 patent/US20180277568A1/en not_active Abandoned
- 2017-03-10 JP JP2019539282A patent/JP6828175B2/ja active Active
- 2017-03-10 EP EP17898038.9A patent/EP3588563A4/en not_active Withdrawn
- 2017-03-10 WO PCT/CN2017/076317 patent/WO2018152874A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101442056A (zh) * | 2007-11-23 | 2009-05-27 | 胜华科技股份有限公司 | 像素阵列基板 |
CN101577248A (zh) * | 2009-06-12 | 2009-11-11 | 友达光电股份有限公司 | 阵列基板及其形成方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3588563A4 * |
Also Published As
Publication number | Publication date |
---|---|
JP6828175B2 (ja) | 2021-02-10 |
EP3588563A4 (en) | 2020-12-02 |
US20180277568A1 (en) | 2018-09-27 |
CN106847829A (zh) | 2017-06-13 |
EP3588563A1 (en) | 2020-01-01 |
KR20190110617A (ko) | 2019-09-30 |
JP2020507208A (ja) | 2020-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2018152874A1 (zh) | 一种阵列基板及阵列基板的制作方法 | |
WO2018006479A1 (zh) | 阵列基板及其制作方法、以及液晶显示面板 | |
WO2018133134A1 (zh) | Coa基板及液晶显示面板 | |
WO2018196112A1 (zh) | Ltps阵列基板及其制作方法 | |
WO2017008316A1 (zh) | 一种阵列基板及液晶显示面板 | |
WO2016008184A1 (zh) | 一种显示面板及显示装置 | |
WO2013004041A1 (zh) | 一种适用于psva与阵列的测试电路 | |
WO2018176566A1 (zh) | 一种阵列基板的制作方法及阵列基板 | |
WO2013060045A1 (zh) | Tft阵列基板及液晶面板 | |
WO2014023013A1 (zh) | 具有大通道宽度的薄膜晶体管构造及薄膜晶体管基板电路 | |
WO2016165175A1 (zh) | 液晶显示面板及液晶显示装置 | |
WO2019041476A1 (zh) | 一种阵列基板及其制作方法、显示面板 | |
WO2017128597A1 (zh) | 液晶显示面板、tft基板及其制造方法 | |
WO2018176565A1 (zh) | 一种液晶显示面板及装置 | |
WO2018218711A1 (zh) | Tft基板和液晶显示面板 | |
WO2016095243A1 (zh) | 液晶面板及其制备方法 | |
WO2019015077A1 (zh) | 一种阵列基板及其制造方法、液晶显示装置 | |
WO2016095252A1 (zh) | Ffs阵列基板及液晶显示面板 | |
WO2016090690A1 (zh) | 一种ltps像素单元及其制造方法 | |
WO2018214210A1 (zh) | 一种阵列基板及其制作方法 | |
WO2016078112A1 (zh) | 薄膜晶体管基板的制作方法及制造设备 | |
WO2016149958A1 (zh) | 液晶显示面板、阵列基板及其薄膜晶体管的制造方法 | |
WO2017177537A1 (zh) | 一种液晶显示面板及液晶显示器 | |
WO2016101303A1 (zh) | Ffs阵列基板及液晶显示面板 | |
WO2014019227A1 (zh) | 一种液晶显示装置、阵列基板及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 15521442 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17898038 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2019539282 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20197026096 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2017898038 Country of ref document: EP Effective date: 20190923 |