WO2018147136A1 - 配線構造及びその製造方法、スパッタリングターゲット材、並びに酸化防止方法 - Google Patents
配線構造及びその製造方法、スパッタリングターゲット材、並びに酸化防止方法 Download PDFInfo
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- WO2018147136A1 WO2018147136A1 PCT/JP2018/003145 JP2018003145W WO2018147136A1 WO 2018147136 A1 WO2018147136 A1 WO 2018147136A1 JP 2018003145 W JP2018003145 W JP 2018003145W WO 2018147136 A1 WO2018147136 A1 WO 2018147136A1
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- Prior art keywords
- copper
- zirconium
- silicon
- wiring
- mol
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- 238000005477 sputtering target Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 33
- 239000013077 target material Substances 0.000 title claims description 33
- 238000007254 oxidation reaction Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000002265 prevention Effects 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 239000010949 copper Substances 0.000 claims abstract description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052802 copper Inorganic materials 0.000 claims abstract description 66
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 47
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000003064 anti-oxidating effect Effects 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 156
- 229910000676 Si alloy Inorganic materials 0.000 description 31
- DVFDQGVLIIHFAJ-UHFFFAOYSA-N [Si][Zr][Cu] Chemical compound [Si][Zr][Cu] DVFDQGVLIIHFAJ-UHFFFAOYSA-N 0.000 description 31
- 238000000137 annealing Methods 0.000 description 25
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 13
- 239000004020 conductor Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 229910000881 Cu alloy Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012811 non-conductive material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010273 cold forging Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Definitions
- the present invention relates to a wiring structure and a manufacturing method thereof.
- the present invention also relates to a sputtering target material.
- the invention further relates to a method for preventing oxidation.
- Aluminum alloys are often used as wiring films for circuit boards used in touch panels of display devices such as liquid crystal displays, plasma displays, and organic EL. Recently, along with higher definition and higher speed of devices, wiring films have been miniaturized and thinned, and a wiring film having a lower electrical resistivity than an aluminum alloy is required. Therefore, copper having a low resistance and a high melting point has attracted attention. However, when a copper wiring film is used, oxidation progresses in the heating step and the resistance value increases, so that a protective layer for preventing oxidation is required.
- Patent Document 1 includes, as a copper alloy sputtering target material, a total of one or more of La, Mg, Li, Si, V, Zr, Hf, and Nb in an amount of 0.005 to 0.5% by mass, and oxygen.
- a copper alloy sputtering target material containing 0.1 to 5 ppm and the balance being copper and inevitable impurities has been proposed.
- Patent Document 2 includes 20.0 to 40.0% by mass of Ni as a target material for forming a protective layer of a copper wiring film, and includes Cr, Ti, V, Al, Ta, Co, Zr, Nb, There has been proposed a target material containing 1.0 to 10.0% by mass of any one of Mo or two or more of these elements, with the balance being copper and inevitable impurities.
- JP 2002-294438 A Japanese Patent Application Laid-Open No. 2013-133489
- an object of the present invention is to provide a technique for preventing oxidation of a wiring layer having a wiring layer containing copper.
- the present inventor has found that the above-mentioned problem can be solved by forming a metal layer made of a specific alloy on a wiring layer containing copper.
- the present invention has been made based on the above knowledge, and is a wiring structure comprising a substrate, a wiring layer provided on the substrate, and a metal layer provided on the wiring layer,
- the wiring layer includes copper;
- the metal layer includes zirconium and silicon, and solves the above problems by providing a wiring structure in which the balance is made of copper and inevitable impurities.
- the present invention also includes a step of providing a wiring layer containing copper on a substrate; A step of providing a metal layer containing zirconium and silicon on the wiring layer, the balance being copper and inevitable impurities; And a step of heat-treating the laminated structure having each of these layers.
- the present invention is a method for preventing oxidation of the wiring layer during a heat treatment in a manufacturing process of a wiring structure including a substrate and a wiring layer including copper provided on the substrate, Prior to the heat treatment, there is provided an antioxidant method for forming a metal layer containing zirconium and silicon on the wiring layer, the balance being copper and inevitable impurities.
- FIG. 1 is a schematic view of a cross section along the thickness direction showing an embodiment of a wiring structure of the present invention.
- FIG. 2A is a schematic diagram of a cross section along the thickness direction showing another embodiment of the wiring structure of the present invention, and FIG. 2B shows the wiring structure in a state where an opening is formed in the insulating layer.
- FIG. 2C is a schematic diagram (corresponding to FIG. 2A), and FIG. 2C is a schematic diagram in a state where a transparent conductor layer is further formed on the wiring structure of FIG. 2B.
- FIG. 3 is a schematic diagram of the upper surface of the TEG formation pattern for wiring resistance measurement.
- FIG. 4 is a schematic diagram of the upper surface of the TEG formation pattern for contact resistance measurement.
- FIG. 5 is a graph showing X-ray diffraction measurement results of the sputtering target materials obtained in Examples 1 to 7.
- FIG. 1 shows an embodiment of a wiring structure of the present invention.
- the wiring structure 10 shown in the figure is used as various semiconductor devices such as transistors and FETs.
- the wiring structure 10 includes a substrate 11.
- a substrate made of a nonconductive material such as a glass substrate can be used.
- a glass substrate on which a transparent conductive film such as ITO is formed can be used.
- the wiring layer 12 containing copper is a wiring of an electric circuit made of pure copper or a copper alloy, and is generally composed of a thin film layer formed on the substrate 11 by various thin film forming methods.
- the thickness of the wiring layer 12 can be arbitrarily set according to the specific application of the wiring structure 10, and can be set to, for example, 50 nm or more and 500 nm or less.
- the wiring layer 12 is made of a copper alloy
- examples of the copper alloy include a copper-based alloy containing one or more elements selected from manganese, magnesium, bismuth, indium and the like as an alloy component. It is done. These alloy components can be contained in the copper alloy at a ratio of 0.01 mol% or more and 25 mol% or less.
- the copper alloy is different from the alloy constituting the metal layer 14 described later.
- An adhesion layer 13 may be formed between the wiring layer 12 and the substrate 11 to improve the adhesion between them.
- the material of the adhesion layer 13 an appropriate material is used according to the material of the substrate 11.
- the substrate 11 is, for example, glass, it is preferable to use titanium or the like as the adhesion layer 13, and the thickness is preferably 10 nm or more and 100 nm or less.
- the wiring layer 12 has a first surface 12 a that is a surface facing the substrate 11.
- the wiring layer 12 has a second surface 12b which is a surface located on the opposite side to the first surface 12a.
- the first surface 12a is in contact with the adhesion layer 13 described above.
- a metal layer 14 is provided on the second surface 12b.
- the wiring layer 12 and the metal layer 14 are in direct contact with each other, and no other layer is interposed between the layers 12 and 14.
- the metal layer 14 is formed so as to cover the entire area of the second surface 12 b of the wiring layer 12. Therefore, there is no region exposed on the second surface 12b of the wiring layer 12. Details of the metal layer 14 will be described later.
- the wiring structure 10 has a laminated structure 15 including an adhesion layer 13, a wiring layer 12, and a metal layer 14 laminated on a substrate 11 in this order.
- the wiring structure 10 having such a structure can be obtained by forming the adhesion layer 13, the wiring layer 12, and the metal layer 14 to form the laminated structure 15 using various thin film forming methods, for example. Thereafter, annealing treatment (heat treatment) at a high temperature such as firing of the wiring structure 10 or forming another layer on the wiring structure 10 may be performed. This annealing treatment is performed, for example, when improving the adhesion between the substrate 11 and the wiring layer 12 in the wiring structure 10, manufacturing an electronic device including the wiring structure 10, specifically, manufacturing a thin film transistor including the wiring structure 10.
- the oxidizing atmosphere refers to an atmosphere containing an oxidizing gas such as O 2 , O 3 , H 2 O, N 2 O, and the like. Examples include the following atmosphere.
- the temperature of the annealing treatment is generally 300 ° C. or higher, particularly 350 ° C. or higher.
- the annealing treatment time is generally 15 minutes or longer and 120 minutes or shorter.
- the metal layer 14 described above is provided so as to cover the entire area of the second surface 12b of the wiring layer 12.
- the wiring structure 10 of the present embodiment provided with the metal layer 14 is more effective especially under high-temperature annealing conditions.
- an alloy containing zirconium and silicon and the balance of copper and inevitable impurities that is, a copper-zirconium-silicon (Cu—Zr—Si) alloy is used (hereinafter referred to as an alloy).
- an alloy containing zirconium and silicon and the balance of copper and inevitable impurities is also referred to as a “copper-zirconium-silicon alloy”.
- the wiring structure 10 When the wiring structure 10 is annealed in an oxidizing atmosphere as described above, zirconium and silicon are oxidized in the metal layer 14 prior to copper, and a mixed oxide of zirconium oxide and silicon oxide or zirconium and silicon is mixed. A dense oxide layer of complex oxide is formed so as to cover the wiring layer 12. This dense oxide layer stops the oxidation of copper contained in the wiring layer 12. As a result, while the non-oxidized zirconium and silicon remain in the metal layer 14, the non-oxidized zirconium and silicon are oxidized prior to the oxidation of the copper contained in the wiring layer 12. The copper oxidation in the wiring layer 12 is suppressed, and the increase in the electrical resistance of the wiring layer 12 is suppressed. As a result, the wiring structure 10 is not easily affected by the oxidation caused by annealing even after annealing in an oxidizing atmosphere.
- the copper-zirconium-silicon alloy constituting the metal layer 14 has a zirconium content of 1 mol% or more to the total number of moles of copper, zirconium and silicon. It is preferably contained in an amount of not more than 1 mol%, more preferably not less than 1 mol% and not more than 10 mol%, more preferably not less than 2 mol% and not more than 10 mol%, more preferably not less than 4 mol% and not more than 8 mol%. Is even more preferable.
- the copper-zirconium-silicon alloy constituting the metal layer 14 preferably contains 1 mol% or more and 33 mol% or less of silicon with respect to the total number of moles of copper, zirconium and silicon.
- the content is more preferably 1 mol% or more and 10 mol% or less, still more preferably 2 mol% or more and 10 mol% or less, still more preferably 4 mol% or more and 8 mol% or less.
- the copper-zirconium-silicon alloy constituting the metal layer 14 is the sum of the number of moles of zirconium and silicon with respect to the total number of moles of copper, zirconium and silicon. Is preferably 2 mol% or more and 40 mol% or less, more preferably 2 mol% or more and 20 mol% or less, further preferably 4 mol% or more and 20 mol% or less, and more preferably 8 mol% or more and 16 mol% or less. It is still more preferable that it contains less than mol%.
- the copper-zirconium-silicon alloy constituting the metal layer 14 is preferably an alloy made of zirconium and silicon and the balance being made of copper and inevitable impurities. However, as long as the effects of the present invention are exhibited, it is allowed to contain a trace amount of elements other than copper, zirconium, and silicon.
- the proportion of inevitable impurities is preferably 2 mol% or less with respect to the total number of moles of copper, zirconium and silicon. More preferably, it is at most mol%. The smaller the proportion of inevitable impurities, the better.
- the metal layer 14 made of copper-zirconium-silicon alloy can be formed by various thin film forming methods, for example.
- a conventionally known method such as sputtering or vacuum deposition can be employed.
- a sputtering target material containing zirconium and silicon as the copper-zirconium-silicon alloy source, and the balance being copper and inevitable impurities.
- the alloy composition of the copper-zirconium-silicon alloy in this target material is substantially the same as the alloy composition of the copper-zirconium-silicon alloy constituting the metal layer 14.
- this sputtering target material is made of a copper-zirconium-silicon alloy, and is used for forming the metal layer 14 for preventing the wiring layer 12 from being oxidized in the wiring structure 10.
- the sputtering target is allowed to contain a trace amount of other elements other than copper, zirconium and silicon, for example, oxygen for the same reason as the metal layer 14, but the content of the element is small if the content is small. The more preferable.
- the sputtering target material is used not only for sputtering but also for various physical vapor deposition (PVD) target materials such as vacuum deposition such as arc ion plating. Further, the sputtering target material is used for forming the metal layer 14 in the wiring structure 10 having the structure shown in FIG. 1, and contains zirconium and silicon in addition to the wiring structure 10 having the structure shown in FIG. In order to prevent oxidation of the wiring layer containing copper and unavoidable impurities, it can also be used to form a metal layer provided directly adjacent to the wiring layer.
- PVD physical vapor deposition
- the target material can be manufactured by various methods known in the art. For example, copper, zirconium and silicon melted in a vacuum are cast and alloyed. Next, a target material is manufactured using the obtained ingot. There is no restriction
- a copper-zirconium-silicon alloy powder produced by an atomizing method or the like may be produced by hot pressing (so-called powder metallurgy) by a known method.
- the obtained plate material may be attached to a backing plate, which is a sputtering jig, using a bonding material such as indium.
- the target material includes a state before a target material finishing step such as surface grinding or bonding.
- a target material finishing step such as surface grinding or bonding.
- the thickness of the metal layer 14 formed by the above-described method can be arbitrarily set according to the specific application of the wiring structure 10, and is set to, for example, 10 nm or more and 100 nm or less, preferably 20 nm or more and 60 nm or less. be able to.
- 10 nm or more By setting the thickness of the metal layer 14 to 10 nm or more, it is possible to effectively prevent oxidation of copper contained in the wiring layer 12 to be protected.
- the productivity of the metal layer 14 can be prevented from being impaired by setting the thickness of the metal layer 14 to 100 nm or less.
- the metal layer 14 only needs to cover a portion necessary for fulfilling the purpose of preventing the wiring layer 12 from being oxidized.
- the wiring layer 12 is provided only on the entire second surface 12b of the wiring layer 12, but may be provided so as to cover the entire wiring layer 12 and the adhesion layer 13 as necessary.
- the wiring structure 10 includes a step of providing the wiring layer 12 containing copper on the substrate 11, and a step of providing the metal layer 14 containing zirconium and silicon on the wiring layer 12, with the balance being copper and inevitable impurities. And a process comprising a step of heat-treating the laminated structure having both the layers 12 and 14.
- oxidation of the wiring layer 12 can be prevented even when heat treatment is performed in an oxidizing atmosphere such as air in the manufacturing process of the wiring structure 10.
- this prevention of oxidation is achieved by forming the metal layer 14 containing zirconium and silicon on the wiring layer 12 and the balance being made of copper and inevitable impurities prior to the heat treatment.
- an antioxidant method for preventing the wiring layer 12 from being oxidized during the heat treatment in the manufacturing process of the wiring structure 10.
- the wiring structure 10 manufactured by the above method may be used as it is, or may be post-processed and used as various electronic devices.
- the electronic device include various semiconductor devices such as transistors and FETs. If a transparent material such as glass is used as the substrate 11, a thin film transistor (TFT) can be obtained.
- TFT thin film transistor
- the following processing is performed for the purpose of forming an insulating layer such as silicon nitride (SiN) on the wiring structure 10 or forming a wiring such as indium-doped tin oxide (ITO).
- the process can be further performed.
- the insulating layer 16 is formed so as to cover the entire laminated structure 15. That is, the laminated structure 15 shown in FIG. 2A is in a state where there is no region exposed on the outer surface.
- the insulating layer 16 is made of a non-conductive material.
- non-conductive materials include various non-oxide non-conductive materials.
- a nitride non-conductive material as the insulating layer 16 from the viewpoint that the oxidation of copper contained in the wiring layer 12 is suppressed by a synergistic effect with the metal layer 14 having a specific alloy composition.
- the nitride nonconductive material include nitrogen-containing ceramic materials such as silicon nitride (SiN) and aluminum nitride.
- SiN silicon nitride
- the effect of suppressing oxidation of copper contained in the wiring layer 12 is further enhanced.
- an opening 16A as a contact hole is formed in the insulating layer 16, and the upper surface 14a of the metal layer 14 is exposed to the outside.
- a CF 4 / O 2 -based etching gas may be used to form the opening 16A.
- a transparent conductor material such as amorphous ITO is laminated so as to cover the upper surface (outer surface) of the insulating layer 16 and the entire upper surface 14a of the metal layer 14 exposed from the opening 16A.
- a laminate is formed.
- the transparent conductor layer 17 shown in FIG. 2C has a transparent conductor such as crystallized ITO exposed on the insulating layer 16 and in the opening 16A.
- a coating is formed on layer 14.
- the wiring structure of the present invention can also be formed by further performing a step of providing a transparent conductor layer 17 on both of the metal layers 14 exposed in 16A.
- the wiring structure 10 thus formed can be used as various semiconductor devices such as thin film transistors.
- the contact resistance between the metal layer 14 and the transparent conductor layer 17 becomes low.
- the formation of the insulating layer, the formation of the contact hole, the lamination of the transparent conductor material, and the annealing treatment can be performed by a known method in this technical field.
- Example 1 Ingots of various starting materials were precisely weighed so as to have the composition shown in Table 1 below, and these ingots were put into a magnesia crucible. These ingots were melted by vacuum heating in a high-frequency induction vacuum melting furnace. Thus, the molten metal was cast into a carbon mold to obtain an ingot. The obtained ingot was cut out using a wire cut saw and then processed into a thickness of 5 mm by a lathe process. One side of the target material thus obtained was brazed to a backing plate to produce a copper-zirconium-silicon alloy sputtering target.
- a wiring structure was prepared using a titanium sputtering target, a pure copper sputtering target, and the copper-zirconium-silicon alloy sputtering target obtained above.
- sputtering was performed using a titanium sputtering target under the following conditions to form an adhesion layer having a thickness of 25 nm on a glass substrate.
- sputtering was performed under the same conditions using a pure copper sputtering target, and a wiring layer having a thickness of 400 nm was formed on the adhesion layer.
- ⁇ Sputtering conditions ⁇ Sputtering method: DC magnetron sputtering ⁇ Exhaust device: Rotary pump + cryopump ⁇ Achieving vacuum: 1 ⁇ 10 ⁇ 4 Pa or less ⁇ Ar pressure: 0.4 Pa -Substrate temperature: Room temperature-Sputtering power: 1000 W (Power density 3.1 W / cm 2 ) -Substrate used: EAGLE XG (Corning / glass for liquid crystal display, registered trademark), 50 mm (length) x 50 mm (width) x 0.7 mm (thickness)
- annealing treatment heat treatment
- the annealing process was performed in the atmosphere.
- the annealing temperature was set to 350 ° C., and the annealing time was 30 minutes.
- Examples 2 to 7 A copper-zirconium-silicon alloy sputtering target was produced in the same manner as in Example 1 except that the amount charged was changed so that the ratios of copper, zirconium and silicon were as shown in Table 1. Using the obtained sputtering target, a wiring structure having the structure shown in FIG. 1 and a pattern having a predetermined shape shown in FIG. 3 was obtained in the same manner as in Example 1.
- Example 1 In Example 1, a metal layer made of a copper-zirconium-silicon alloy was not formed. Except for this, a wiring structure was obtained in the same manner as in Example 1.
- the oxidation resistance was evaluated with the following method. Further, contact resistance was measured by the following method. Furthermore, the ratio of the copper-zirconium-silicon alloy phase in the sputtering target material used for the production of the wiring structures of the examples and comparative examples was measured. The results are shown in Table 1.
- the composition of the copper-zirconium-silicon alloy of the metal layer in Examples 4 to 7 and Comparative Examples 2 and 3 was obtained by dissolving the sputtered metal layer with an acid to form a solution sample, and the solution sample was ICP-ES (stock) Analyzed and calculated by Hitachi High-Tech Science Co., Ltd., PS3500DP).
- the volume resistivity of the obtained wiring structure was measured before and after annealing.
- a 4-terminal resistance measuring device (B-1500A: manufactured by Agilent Technologies) was used. The measurement procedure is shown below.
- the wiring resistance of the conductive portion composed of the metal layer and the wiring layer is measured in advance in the state of the laminated structure before the annealing treatment.
- the wiring resistance value is obtained by sweeping the current value between the current application pads Pi and Pi shown in FIG. 3 and measuring the voltage value between the voltage measurement pads Pv and Pv.
- the volume resistivity of the conductive portion is calculated from the obtained wiring resistance value, the line width, length, and film thickness of the conductive portion.
- the value is defined as the volume resistivity ( ⁇ ⁇ cm) before annealing.
- the volume resistivity is calculated by the same method as the measurement of the volume resistivity before the annealing treatment.
- the value is defined as the volume resistivity ( ⁇ ⁇ cm) after annealing.
- the volume resistivity change rate before and after the annealing treatment is calculated.
- the volume resistivity change rate (%) is calculated from ⁇ (volume resistivity after annealing-volume resistivity before annealing) / volume resistivity before annealing ⁇ ⁇ 100.
- the contact resistance was measured as follows. The measurement was performed on the wiring structures having the copper zirconium alloy composition of Examples 1 to 7 and Comparative Examples 1 and 3. Specifically, first, as shown in FIG. 2A, a wiring structure having a cross-sectional structure including the insulating layer 16 and having the pattern shown in FIG. 4 was manufactured. After the opening 16A shown in FIG. 2B was formed in this wiring structure under a CF 4 / O 2 -based etching gas, amorphous ITO was laminated to form a laminate. Next, after patterning the laminate using photolithography, annealing was performed at 250 ° C.
- the wiring structure on which the transparent conductor layer was formed had a cross-sectional structure shown in FIG. 2C and had a TEG pattern shown in FIG.
- the current value is swept between the current application pads Pi of the TEG pattern, the voltage between the voltage measurement pads Pv is measured, and the layer between the metal layer and the transparent conductor layer is measured.
- the contact resistance value Pv / Pi was determined.
- the above-described 4-terminal resistance measuring device was used for the measurement.
- the electric current higher than measurement current was sent and ohmic property was confirmed. The results are shown in Table 1. In the table, “-” means that no measurement is performed.
- the ratio of the copper-zirconium-silicon alloy phase in the sputtering target was calculated by energy dispersive X-ray (EDX) analysis for the surface of the sputtering target material used in the production of the wiring structures of Examples 1 to 7. Specifically, elemental analysis was performed using an energy dispersive X-ray analyzer (manufactured by JEOL Ltd., dry SD100GV). The results of elemental analysis were subjected to phase separation using multivariate image analysis software (Thermo Fisher Scientific, NSS4), and the ratio (%) of the area of the copper-zirconium-silicon alloy to the area of the entire image was calculated. .
- EDX energy dispersive X-ray
- X-ray diffraction measurement [X-ray diffraction measurement (XRD)] X-ray diffraction measurement (XRD) was performed on the sputtering target material used in the manufacture of the wiring structures of Examples 1 to 7. XRD was measured using RINT-TTR III manufactured by Rigaku Corporation and using Cu K ⁇ (0.15406 nm, 50 kV, 300 mA) as an X-ray source. The diffraction pattern obtained by XRD is shown in FIG.
- the contact resistance value in each example is lower than that in Comparative Example 1 having no metal layer.
- the contact resistance values in Examples 2 to 7 are equal to or less than the same. From this, it can be seen that the contact resistance value is lowered by using a copper-zirconium-silicon alloy for the metal layer.
- a copper-zirconium-silicon alloy is present in the sputtering target, and the proportion of the copper-zirconium-silicon alloy substantially matches the composition of the copper-zirconium-silicon alloy in the metal layer.
- the presence ratio of the copper-zirconium-silicon alloy in the sputtering target was 21 at%, and the copper composition, the zirconium composition, and the silicon composition in the metal layer were 87.8 at. %, 5.6 at%, and 6.6 at%.
- oxidation of the wiring layer is suppressed even after heat treatment in a high temperature and oxidizing atmosphere.
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Abstract
Description
前記配線層は銅を含み、
前記金属層はジルコニウム及びケイ素を含み、且つ残部が銅及び不可避不純物からなる、配線構造を提供することにより前記課題を解決したものである。
前記配線層上に、ジルコニウム及びケイ素を含み、残部が銅及び不可避不純物からなる金属層を設ける工程と、
これら各層を有する積層構造を熱処理する工程と、を備えた配線構造の製造方法を提供するものである。
前記熱処理に先立ち、前記配線層上に、ジルコニウム及びケイ素を含み、残部が銅及び不可避不純物からなる金属層を形成する酸化防止方法を提供するものである。
以下の表1に示す組成となるように、各種出発原料のインゴットを精秤して、これらインゴットをマグネシア製の坩堝に投入した。高周波誘導真空溶解炉中でこれらのインゴットを真空加熱して溶融させた。それによって溶湯をカーボン製の鋳型に鋳造し、鋳塊を得た。得られた鋳塊を、ワイヤーカットソーを用いて切り出した後、旋盤加工によって厚み5mmに加工した。このようにして得られたターゲット材の一面を、バッキングプレートにロウ付けし、銅-ジルコニウム-ケイ素合金スパッタリングターゲットを作製した。
≪スパッタリング条件≫
・スパッタ方式:DCマグネトロンスパッタ
・排気装置 :ロータリーポンプ+クライオポンプ
・到達真空度 :1×10-4Pa以下
・Ar圧力 :0.4Pa
・基板温度 :室温・スパッタ電力:1000W(電力密度3.1W/cm2)
・使用基板 :EAGLE XG(コーニング社/液晶ディスプレイ用ガラス、登録商標)、50mm(縦)×50mm(横)×0.7mm(厚み)
銅、ジルコニウム及びケイ素の割合が表1に示す値となるように仕込み量を変更した以外は実施例1と同様にして、銅-ジルコニウム-ケイ素合金スパッタリングターゲットを作製した。得られたスパッタリングターゲットを用い、実施例1と同様にして図1に示す構造の配線構造を備え、且つ図3に示す所定形状のパターンのものを得た。
実施例1において、銅-ジルコニウム-ケイ素合金からなる金属層を形成しなかった。これ以外は実施例1と同様にして配線構造を得た。
金属層の形成に、銅-ジルコニウム-ケイ素合金スパッタリングターゲットを用いることに代えて、ケイ素を含まない銅-ジルコニウム合金スパッタリングターゲットを用いた。銅及びジルコニウムの割合が表1に示す値となるように仕込み量を変更した以外は実施例1と同様にして、配線構造を得た。
実施例及び比較例で得られた配線構造について、耐酸化性を以下の方法で評価した。また、以下の方法でコンタクト抵抗の測定を行った。更に、実施例及び比較例の配線構造の製造に用いたスパッタリングターゲット材中の銅-ジルコニウム-ケイ素合金相の割合を測定した。その結果を表1に示す。なお、実施例4ないし7並びに比較例2及び3における金属層の銅-ジルコニウム-ケイ素合金の組成は、スパッタリングした金属層を酸で溶解して溶液サンプルとし、その溶液サンプルをICP-ES(株式会社日立ハイテクサイエンス製、PS3500DP)で分析して算出した。
得られた配線構造の体積抵抗率をアニール処理前とアニール処理後のそれぞれで測定した。測定には4端子抵抗測定装置(B-1500A:アジレントテクノロジー社製)を用いた。測定手順を以下に示す。
まず、配線構造の製造時において、アニール処理前の積層構造の状態で、予め金属層及び配線層からなる導電部の配線抵抗を測定する。具体的には、図3に示す電流印加パッドPi,Pi間で電流値を掃引させ、電圧測定パッドPv,Pv間の電圧値を測定することで配線抵抗値を得る。得られた配線抵抗値、前記導電部の線幅、長さ、及び膜厚より、導電部の体積抵抗率を算出する。その値をアニール処理前の体積抵抗率(Ω・cm)とする。
次に、アニール処理後の配線構造において、アニール処理前の体積抵抗率の測定と同様方法で体積抵抗率を算出する。その値をアニール処理後の体積抵抗率(Ω・cm)とする。
そして、アニール処理前とアニール処理後での体積抵抗率の変化率を算出する。体積抵抗率の変化率(%)は、{(アニール処理後の体積抵抗率-アニール処理前の体積抵抗率)/アニール処理前の体積抵抗率}×100から算出する。
コンタクト抵抗の測定は、以下のように行った。測定は、実施例1ないし7並びに比較例1及び3の銅ジルコニウム合金組成を有する配線構造を対象として行った。具体的には、まず図2(a)に示すように、絶縁層16を含む断面構造を備え、且つ図4に示すパターンを有する配線構造を製造した。この配線構造にCF4/O2系のエッチングガス下で図2(b)に示す開口部16Aを形成した後、非晶質のITOを積層させ、積層体を形成した。
次いで、フォトリソグラフィーを用いて積層体をパターニングした後に、250℃で1時間アニール処理を行ってITOを結晶化し、ITOからなる透明導電体層を更に形成させた配線構造を得た。透明導電体層を形成させた配線構造は、図2(c)に示す断面構造を備え、且つ図4に示すTEGパターンを有するものであった。
透明導電体層を形成させた配線構造について、TEGパターンの電流印加パッドPi間で電流値を掃引させ、電圧測定パッドPv間の電圧を測定して、金属層と透明導電体層との層間におけるコンタクト抵抗値Pv/Pi(Ω/10μm)を求めた。測定には前述の4端子抵抗測定装置を用いた。なお、コンタクト抵抗測定前には、測定電流より高い電流を流し、オーミック性の確認を行った。結果を表1に示す。なお同表中、「-」は測定を行っていないことを意味する。
スパッタリングターゲット中の銅-ジルコニウム-ケイ素合金相の割合は、実施例1ないし7の配線構造の製造に用いたスパッタリングターゲット材の表面を対象として、エネルギー分散型X線(EDX)分析により算出した。詳細には、エネルギー分散型X線分析装置(日本電子社製、ドライSD100GV)を用いて、元素分析を行った。元素分析の結果を多変量イメージ解析ソフト(サーモフィッシャーサイエンティフィック社製、NSS4)を用いて相分離を行い、画像全体の面積に対する銅-ジルコニウム-ケイ素合金の面積の割合(%)を算出した。
実施例1ないし7の配線構造の製造に用いたスパッタリングターゲット材を対象として、X線回折測定(XRD)を実施した。XRDはリガク社製 RINT-TTR IIIを用い、X線源としてCu Kα(0.15406nm、50kV、300mA)を用いて測定した。XRDによって得られた回折パターンを図5に示した。
Claims (11)
- 基板と、該基板上に設けられた配線層と、該配線層上に設けられた金属層とを備えた配線構造であって、
前記配線層は銅を含み、
前記金属層はジルコニウム及びケイ素を含み、且つ残部が銅及び不可避不純物からなる、配線構造。 - 前記金属層が、銅、ジルコニウム及びケイ素のモル数の合計に対して、ジルコニウムを1モル%以上33モル%以下含み、ケイ素を1モル%以上33モル%以下含む、請求項1に記載の配線構造。
- 前記金属層において、銅、ジルコニウム及びケイ素のモル数の合計に対する、ジルコニウム及びケイ素のモル数の合計が2モル%以上40モル%以下である、請求項1又は2に記載の配線構造。
- ジルコニウム及びケイ素を含み、残部が銅及び不可避不純物からなるスパッタリングターゲット材であって、
前記スパッタリングターゲット材は、請求項1ないし3のいずれか一項に記載の配線構造における金属層の形成に用いられるものである、スパッタリングターゲット材。 - 基板上に銅を含む配線層を設ける工程と、
前記配線層上に、ジルコニウム及びケイ素を含み、残部が銅及び不可避不純物からなる金属層を設ける工程と、
これら各層を有する積層構造を熱処理する工程と、を備えた配線構造の製造方法。 - 前記積層構造の熱処理を酸化性雰囲気下で行う、請求項5に記載の配線構造の製造方法。
- 基板と、該基板上に設けられた銅を含む配線層とを備えた配線構造の製造過程における熱処理時に該配線層の酸化を防止する方法であって、
前記熱処理に先立ち、前記配線層上に、ジルコニウム及びケイ素を含み、残部が銅及び不可避不純物からなる金属層を形成する酸化防止方法。 - 前記配線構造の製造過程における熱処理を酸化性雰囲気下で行う、請求項7に記載の酸化防止方法。
- ジルコニウム及びケイ素を含み、残部が銅及び不可避不純物からなり、銅を含む配線層の酸化防止用の金属層の形成に用いられるものである、スパッタリングターゲット材。
- 銅、ジルコニウム及びケイ素のモル数の合計に対して、ジルコニウムを1モル%以上33モル%以下含み、ケイ素を1モル%以上33モル%以下含む、請求項9に記載のスパッタリングターゲット材。
- 銅、ジルコニウム及びケイ素のモル数の合計に対する、ジルコニウム及びケイ素のモル数の合計が2モル%以上40モル%以下である、請求項9又は10に記載のスパッタリングターゲット材。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03196619A (ja) * | 1989-12-26 | 1991-08-28 | Nippon Mining Co Ltd | 銅配線の形成法とそれに使用するターゲット |
JPH05129224A (ja) * | 1991-11-05 | 1993-05-25 | Oki Electric Ind Co Ltd | Cu−Zr配線パターンの形成方法 |
JP2002367999A (ja) * | 1992-08-27 | 2002-12-20 | Toshiba Corp | 電子部品及びその製造方法 |
JP2012079933A (ja) * | 2010-10-01 | 2012-04-19 | Fujifilm Corp | 配線材料、配線の製造方法、及びナノ粒子分散液 |
JP2012222171A (ja) * | 2011-04-11 | 2012-11-12 | Hitachi Ltd | 表示装置およびその製造方法 |
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JP2005131860A (ja) * | 2003-10-29 | 2005-05-26 | Toyobo Co Ltd | 積層透明ガスバリア性フィルム |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03196619A (ja) * | 1989-12-26 | 1991-08-28 | Nippon Mining Co Ltd | 銅配線の形成法とそれに使用するターゲット |
JPH05129224A (ja) * | 1991-11-05 | 1993-05-25 | Oki Electric Ind Co Ltd | Cu−Zr配線パターンの形成方法 |
JP2002367999A (ja) * | 1992-08-27 | 2002-12-20 | Toshiba Corp | 電子部品及びその製造方法 |
JP2012079933A (ja) * | 2010-10-01 | 2012-04-19 | Fujifilm Corp | 配線材料、配線の製造方法、及びナノ粒子分散液 |
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