WO2018078686A1 - 高周波増幅器 - Google Patents

高周波増幅器 Download PDF

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Publication number
WO2018078686A1
WO2018078686A1 PCT/JP2016/081406 JP2016081406W WO2018078686A1 WO 2018078686 A1 WO2018078686 A1 WO 2018078686A1 JP 2016081406 W JP2016081406 W JP 2016081406W WO 2018078686 A1 WO2018078686 A1 WO 2018078686A1
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WIPO (PCT)
Prior art keywords
wires
transistor
frequency amplifier
semiconductor substrate
sealing material
Prior art date
Application number
PCT/JP2016/081406
Other languages
English (en)
French (fr)
Inventor
敏夫 松井
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三菱電機株式会社
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Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2016/081406 priority Critical patent/WO2018078686A1/ja
Priority to US16/304,708 priority patent/US10951174B2/en
Priority to JP2017503024A priority patent/JP6195031B1/ja
Priority to CN201680090275.6A priority patent/CN109863592B/zh
Priority to DE112016007370.4T priority patent/DE112016007370B4/de
Priority to TW105140209A priority patent/TWI633633B/zh
Publication of WO2018078686A1 publication Critical patent/WO2018078686A1/ja

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    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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Definitions

  • the present invention relates to a high frequency amplifier having wire wiring.
  • a structure in which the upper portion of the FET is hollow using a metal frame and a metal cap is used.
  • a structure in which a parasitic capacitance is reduced by applying a low dielectric constant resin on the FET is also used.
  • the effect of reducing the parasitic capacitance is smaller than that of the former structure.
  • the former metal cap structure has a shielding effect and also has an effect of suppressing radiation noise of the FET.
  • a stray capacitance between the two is reduced by providing a wire between the gate and the drain by a shielding effect (see, for example, Patent Document 1). Further, it is disclosed that a metal plate is provided above the FET with a gap of 0.2 ⁇ m or less so that a cavity is provided above the FET to reduce stray capacitance (see, for example, Patent Document 2).
  • HEMT high electron mobility transistor
  • a cavity or low above the FET to reduce the stray capacitance between the gate and drain. It is required to dispose a dielectric constant layer.
  • a structure in which a wire connected to a semiconductor chip is sealed with a thermosetting resin is used from the viewpoint of cost, the number of materials, and the manufacturing process.
  • a hollow structure in which a cavity is provided above a transistor using a metal frame and a metal cap is better.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to reduce the stray capacitance between the gate electrode and the drain electrode and to suppress the radiation noise of the transistor. Is what you get.
  • the high-frequency amplifier according to the present invention includes a semiconductor substrate, a transistor formed on a surface of the semiconductor substrate, and having a gate electrode, a source electrode, and a drain electrode, and the gate electrode, the source electrode, and the drain electrode interposed therebetween.
  • First and second wirings formed on the surface of the semiconductor substrate, and a plurality of wires connected to the first and second wirings through the gate electrode, the source electrode, and the drain electrode
  • a sealing material that seals the transistor, the first and second wirings, and the plurality of wires, the sealing material contains a filler, and a separation distance between the plurality of wires is
  • a cavity which is narrower than the particle size of the filler and does not contain the sealing material is formed between the plurality of wires and the transistor.
  • a plurality of wires pass above the source electrode and the drain electrode and are connected to the first and second wirings.
  • the distance between the plurality of wires is narrower than the particle size of the filler. For this reason, when the sealing material is applied, a cavity in which the sealing material does not enter is formed between the plurality of wires and the transistor. This cavity can reduce the stray capacitance between the gate electrode and the drain electrode. Further, radiation noise can be suppressed by covering the upper portion of the transistor with a plurality of wires.
  • FIG. 2 is a cross-sectional view taken along the line II of FIG. It is a perspective view which shows the manufacturing process of the high frequency amplifier which concerns on Embodiment 1 of this invention. It is a perspective view which shows the manufacturing process of the high frequency amplifier which concerns on Embodiment 1 of this invention. It is a perspective view which shows the manufacturing process of the high frequency amplifier which concerns on Embodiment 1 of this invention. It is a cross section which shows the manufacturing process of the high frequency amplifier which concerns on Embodiment 1 of this invention. It is a perspective view which shows the manufacturing process of the high frequency amplifier which concerns on Embodiment 1 of this invention.
  • FIG. 20 is a cross-sectional view taken along the line II of FIG.
  • a high frequency amplifier according to an embodiment of the present invention will be described with reference to the drawings.
  • the same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.
  • FIG. 1 and 2 are perspective views that penetrate the inside of the high-frequency amplifier according to Embodiment 1 of the present invention.
  • FIG. 3 is a cross-sectional view taken along the line II of FIG.
  • Transistor 2 is formed on the surface of semiconductor substrate 1.
  • the gate electrode 3 of the transistor 2 and the lead frame 4 are connected by a gate wire 5.
  • the drain electrode 6 of the transistor 2 and the lead frame 7 are connected by a drain wire 8.
  • the source electrode 9 of the transistor 2 is connected to the source wirings 10 and 11.
  • the source wiring 10 and the lead frames 12 and 13 are connected by source wires 14 and 15, respectively.
  • the source wiring 11 and the lead frames 16 and 17 are connected by source wires 18 and 19, respectively.
  • the source wirings 10 and 11 are formed on the surface of the semiconductor substrate 1 so as to sandwich the transistor 2.
  • a plurality of wires 20 pass through the transistor 2 and are connected to the source wirings 10 and 11.
  • a sealing material 21 seals the transistor 2, the source wirings 10 and 11, the plurality of wires 20, and the like.
  • a cavity 22 in which the sealing material 21 does not enter is formed between the plurality of wires 20 and the transistor 2.
  • FIG. 4 5, 7 to 11 are perspective views showing the manufacturing steps of the high-frequency amplifier according to Embodiment 1 of the present invention.
  • 6, 12, and 13 are cross-sectional views showing the manufacturing steps of the high-frequency amplifier according to Embodiment 1 of the present invention.
  • 6 is a cross-sectional view taken along the line I-II in FIG. 4
  • FIG. 12 is a cross-sectional view taken along the line I-II in FIG.
  • the transistor 2 is formed on the surface of the semiconductor substrate 1, and the lead frames 4, 7, 12, 13, 16, and 17 are arranged on the sides thereof.
  • the gate electrode 3 of the transistor 2 and the lead frame 4 are connected by the gate wire 5.
  • the drain electrode 6 and the lead frame 7 are connected by the drain wire 8.
  • the source wiring 10 and the lead frames 12 and 13 are connected by source wires 14 and 15, respectively.
  • Source wiring 11 is connected to source wires 18 and 19 by lead frames 16 and 17, respectively.
  • a plurality of wires 20 are connected to the source wirings 10 and 11 through the transistor 2.
  • the sealing material 21 is an epoxy resin containing a silica filler 21a, and a thermosetting resin having a high hitting viscosity is used within a usable range.
  • the distance a between the plurality of wires 20 is narrower than the particle size c of the filler 21a. For this reason, as shown in FIG. 13, when the sealing material 21 is applied, the sealing material 21 does not enter between the plurality of wires 20 and the transistor 2, and a cavity 22 is formed.
  • the size of the transistor 2 is 140 ⁇ m ⁇ 140 ⁇ m.
  • Each of the gate wire 5, the drain wire 8, the source wires 14, 15, 18, 19 and the plurality of wires 20 has a diameter of 20 ⁇ m.
  • the distance a between the plurality of wires 20 is 30 ⁇ m or less, and the height b of the plurality of wires 20 is 30 ⁇ m or less.
  • the particle size c of the filler 21a is larger than 30 ⁇ m.
  • ⁇ 0 is the dielectric constant of vacuum
  • ⁇ r is the relative dielectric constant
  • S is the passage area between the objects
  • L is the distance between the objects.
  • the relative dielectric constant ⁇ r of the sealing material 21 is 3-4.
  • the relative permittivity ⁇ r of the cavity 22 is approximately equal to 1 for air. Therefore, by providing the cavity 22 as in the present embodiment, the stray capacitance C gd between the gate electrode 3 and the drain electrode 6 is reduced to 1/3 to 1/4 compared to the case without the cavity 22. can do.
  • the height b of the cavity 22 for obtaining the effect of reducing the stray capacitance is not particularly limited.
  • the transistor 2 and the outside are shielded from each other by the plurality of wires 20 by covering the upper portion of the transistor 2 with the plurality of wires 20, radiation noise that leaks from the transistor 2 to the outside can be suppressed.
  • FIG. FIG. 14 is a perspective view showing the inside of the high-frequency amplifier according to Embodiment 2 of the present invention.
  • FIG. 15 is a cross-sectional view showing the inside of the high-frequency amplifier according to Embodiment 2 of the present invention.
  • the sealing material 21 and the like are not shown.
  • a plurality of first wires 20a and a plurality of second wires 20b arranged thereabove are used instead of the plurality of wires 20 of the first embodiment.
  • the distance d between the plurality of first wires 20a and the plurality of second wires 20b is a distance at which they do not contact each other and is equal to or smaller than the particle size c of the filler 21a.
  • the plurality of second wires 20b are arranged in the gaps between the plurality of first wires 20a in a plan view as viewed from the direction perpendicular to the surface of the semiconductor substrate 1.
  • gaps between the plurality of first wires 20a are filled with the plurality of second wires 20b, and the upper wires of the transistor 2 become dense, so that the effect of shielding radio wave interference between the transistor 2 and the outside is enhanced. Therefore, radiation noise in which the radiation of the transistor 2 leaks to the outside can be suppressed as compared with the first embodiment.
  • FIG. 16 and 17 are perspective views showing the inside of the high-frequency amplifier according to Embodiment 3 of the present invention.
  • FIG. 18 is a cross-sectional view showing the inside of the high-frequency amplifier according to Embodiment 3 of the present invention.
  • a plurality of wires 20 are omitted.
  • the sealing material 21 and the like are not shown.
  • Ground wires 23 and 24 independent from the source electrode 9 of the transistor 2 are provided.
  • the ground wirings 23 and 24 are arranged outside the source electrode 9 and are not connected to the source electrode 9.
  • the plurality of wires 20 pass above the transistor 2 and are connected to the ground wirings 23 and 24.
  • the ground wiring 23 is connected to lead frames 27 and 28 by wires 25 and 26, respectively.
  • the ground wiring 24 is connected to lead frames 31 and 32 by wires 29 and 30, respectively.
  • the plurality of wires 20 are arranged in a low space to prevent the sealing material 21 from entering, some stray capacitance is generated between the gate electrode 3 or the drain electrode 6 and the plurality of wires 20. Therefore, when the plurality of wires 20 are connected to the source wirings 10 and 11 as in the first and second embodiments, the source voltage fluctuates during the operation of the transistor 2, and the stray capacitance C between the gate electrode 3 and the drain electrode 6. gd may fluctuate and affect the electrical characteristics of the transistor 2. In order to suppress this, in the present embodiment, the plurality of wires 20 are connected to the ground wirings 23 and 24 independent of the source electrode 9 of the transistor 2. Thereby, the influence by the voltage change of the source wirings 10 and 11 can be suppressed with respect to the stray capacitance between the gate electrode 3 or the drain electrode 6 and the plurality of wires 20.
  • FIG. FIG. 19 is a perspective view showing the inside of the high-frequency amplifier according to Embodiment 4 of the present invention.
  • 20 is a cross-sectional view taken along the line II of FIG.
  • Two first and second transistors 2a and 2b spaced apart from each other are formed on the surface of one semiconductor substrate 1.
  • the separation distance e between the first and second transistors 2a and 2b is close to, for example, about 40 ⁇ m, the electric fields generated from the first and second transistors 2a and 2b interfere with each other. In general, mutual interference often adversely affects the characteristics, and it is better to isolate them.
  • a wire 34 is provided to cross between the first transistor 2a and the second transistor 2b.
  • An isolation wiring 36 is formed on the surface of the semiconductor substrate 1 between the first and second transistors 2a and 2b.
  • the wire 34 is connected to the lead frame 37, the isolation wiring 36, and the other lead frame 38.
  • the wire 34 and the isolated wiring 36 are not connected to the first and second transistors 2a and 2b.
  • the wire 34 acts as a radio wave shield and suppresses mutual interference between the electric fields generated from the first and second transistors 2a and 2b. As a result, adverse effects on the electrical characteristics of the first and second transistors 2a and 2b can be suppressed.
  • wire 34 may be connected to the other lead frame 38 from the lead frame 37 across the first transistor 2a and the second transistor 2b without providing the isolation wiring 36.

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Abstract

半導体基板（１）の表面にトランジスタ（２）が形成されている。第１及び第２の配線（１０，１１）がトランジスタ（２）を挟むように半導体基板１の表面上に形成されている。複数のワイヤ（２０）がトランジスタ（２）の上方を通って第１及び第２の配線（１０，１１）に接続されている。封止材（２１）がトランジスタ（２）、第１及び第２の配線（１０，１１）、及び複数のワイヤ（２０）を封止する。封止材（２１）はフィラー（２１ａ）を含有する。複数のワイヤ（２０）の互いの離間距離はフィラー（２１ａ）の粒径より狭い。複数のワイヤ（２０）とトランジスタ（２）との間に封止材（２１）が入り込んでいない空洞（２２）が形成されている。

Description

高周波増幅器
　本発明は、ワイヤ配線を有する高周波増幅器に関する。
　高周波増幅器において、ＦＥＴのドレインとゲートの間に生じる浮遊容量を低減する必要がある。そのために、メタルフレームとメタルキャップを用いてＦＥＴの上部を空洞とする構造が用いられている。また、低誘電率の樹脂をＦＥＴの上部に塗布して寄生容量を低減する構造も用いられている。ただし、前者の構造より寄生容量を低減する効果は小さい。また、前者のメタルキャップの構造はシールド作用がありＦＥＴの輻射ノイズを抑制する効果もある。
　また、ゲート・ドレイン間にワイヤを設けることで、シールド効果により両者間の浮遊容量を低減させることが開示されている（例えば、特許文献１参照）。また、ＦＥＴ上部に金属板を０．２μｍ以下の隙間で備えることでＦＥＴの上方に空洞を配し浮遊容量を低減することが開示されている（例えば、特許文献２参照）。
日本特開平４－１６５６５５号公報 日本特開２００４－６８１６号公報
　例えば、高電子移動度トランジスタ（HEMT: high electron mobility transistor）の高周波特性を向上させ、十分な電力利得を得るために、ゲート・ドレイン間の浮遊容量が低減されるようＦＥＴの上方に空洞又は低誘電率層を配することが求められる。一方、費用と材料点数と製造工程の観点から、半導体チップに接続されたワイヤを熱硬化性樹脂により封止する構造が用いられる。ただし、特性面では金属フレームと金属キャップを用いてトランジスタの上方に空洞を設ける中空の構造の方がよい。
　本発明は、上述のような課題を解決するためになされたもので、その目的はゲート電極とドレイン電極との間の浮遊容量を低減し、かつトランジスタの輻射ノイズを抑制することができる高周波増幅器を得るものである。
　本発明に係る高周波増幅器は、半導体基板と、前記半導体基板の表面に形成され、ゲート電極、ソース電極及びドレイン電極を有するトランジスタと、前記ゲート電極、前記ソース電極及び前記ドレイン電極を挟むように前記半導体基板の前記表面上に形成された第１及び第２の配線と、前記ゲート電極、前記ソース電極及び前記ドレイン電極の上方を通って前記第１及び第２の配線に接続された複数のワイヤと、前記トランジスタ、前記第１及び第２の配線、及び前記複数のワイヤを封止する封止材とを備え、前記封止材はフィラーを含有し、前記複数のワイヤの互いの離間距離は前記フィラーの粒径より狭く、前記複数のワイヤと前記トランジスタとの間に前記封止材が入り込んでいない空洞が形成されていることを特徴とする。
　本発明では、複数のワイヤがソース電極及びドレイン電極の上方を通って第１及び第２の配線に接続されている。複数のワイヤの互いの離間距離はフィラーの粒径より狭い。このため、封止材が塗布される際に複数のワイヤとトランジスタとの間に封止材が入り込んでいない空洞が形成される。この空洞によりゲート電極とドレイン電極との間の浮遊容量を低減することができる。また、トランジスタの上方を複数のワイヤで覆うことにより輻射ノイズを抑制することができる。
本発明の実施の形態１に係る高周波増幅器の内部を透過した斜視図である。 本発明の実施の形態１に係る高周波増幅器の内部を透過した斜視図である。 図１のＩ－ＩＩに沿った断面図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す断面である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す断面である。 本発明の実施の形態１に係る高周波増幅器の製造工程を示す断面である。 本発明の実施の形態２に係る高周波増幅器の内部を示す斜視図である。 本発明の実施の形態２に係る高周波増幅器の内部を示す断面図である。 本発明の実施の形態３に係る高周波増幅器の内部を示す斜視図である。 本発明の実施の形態３に係る高周波増幅器の内部を示す斜視図である。 本発明の実施の形態３に係る高周波増幅器の内部を示す断面図である。 本発明の実施の形態４に係る高周波増幅器の内部を示す斜視図である。 図１９のＩ－ＩＩに沿った断面図である。
　本発明の実施の形態に係る高周波増幅器について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態１．
　図１及び図２は、本発明の実施の形態１に係る高周波増幅器の内部を透過した斜視図である。図３は図１のＩ－ＩＩに沿った断面図である。
　半導体基板１の表面にトランジスタ２が形成されている。トランジスタ２のゲート電極３とリードフレーム４がゲートワイヤ５により接続されている。トランジスタ２のドレイン電極６とリードフレーム７がドレインワイヤ８により接続されている。トランジスタ２のソース電極９がソース配線１０，１１に接続されている。ソース配線１０とリードフレーム１２，１３がそれぞれソースワイヤ１４，１５により接続されている。ソース配線１１とリードフレーム１６，１７がそれぞれソースワイヤ１８，１９により接続されている。
　ソース配線１０，１１はトランジスタ２を挟むように半導体基板１の表面上に形成されている。複数のワイヤ２０がトランジスタ２の上方を通ってソース配線１０，１１に接続されている。封止材２１がトランジスタ２、ソース配線１０，１１、及び複数のワイヤ２０等を封止する。複数のワイヤ２０とトランジスタ２との間に封止材２１が入り込んでいない空洞２２が形成されている。
　図４，５，７～１１は、本発明の実施の形態１に係る高周波増幅器の製造工程を示す斜視図である。図６，１２，１３は、本発明の実施の形態１に係る高周波増幅器の製造工程を示す断面である。図６は図４のＩ－ＩＩに沿った断面図、図１２は図９のＩ－ＩＩに沿った断面図である。
　まず、図４～６に示すように、半導体基板１の表面にトランジスタ２を形成し、そのサイドにリードフレーム４，７，１２，１３，１６，１７を配置する。次に、図７，８に示すように、トランジスタ２のゲート電極３とリードフレーム４をゲートワイヤ５により接続する。ドレイン電極６とリードフレーム７をドレインワイヤ８により接続する。ソース配線１０とリードフレーム１２，１３をそれぞれソースワイヤ１４，１５により接続する。ソース配線１１をリードフレーム１６，１７によりそれぞれソースワイヤ１８，１９に接続する。次に、図９～１２に示すように、複数のワイヤ２０をトランジスタ２の上方を通してソース配線１０，１１に接続する。
　次に、封止材２１によりトランジスタ２、ソース配線１０，１１、及び複数のワイヤ２０等を封止する。封止材２１はシリカのフィラー２１ａを含有したエポキシ樹脂であり、使用できる範囲で打ち粘度の高い熱硬化樹脂を用いる。複数のワイヤ２０の互いの離間距離ａはフィラー２１ａの粒径ｃより狭い。このため、図１３に示すように、封止材２１が塗布される際に複数のワイヤ２０とトランジスタ２との間に封止材２１が入り込まず、空洞２２が形成される。
　トランジスタ２としてローノイズＦＥＴを例とすると、トランジスタ２のサイズは１４０μｍ×１４０μｍである。ゲートワイヤ５、ドレインワイヤ８、ソースワイヤ１４，１５，１８，１９、複数のワイヤ２０のそれぞれの直径は２０μｍである。複数のワイヤ２０の互いの離間距離ａは３０μｍ以内、複数のワイヤ２０の高さｂは３０μｍ以下である。フィラー２１ａの粒径ｃは３０μｍより大きい。
　ゲート電極３とドレイン電極６との間の浮遊容量Ｃｇｄは、Ｃｇｄ＝ε０×εｒ×（Ｓ／Ｌ）で求められる。ここで、ε０は真空の誘電率、εｒは比誘電率、Ｓは対象間の通過面積、Ｌは対象間距離である。封止材２１の比誘電率εｒは３～４である。空洞２２の比誘電率εｒは空気の１におよそ等しい。従って、本実施の形態のように空洞２２を設けることで、空洞２２が無い場合に比べて、ゲート電極３とドレイン電極６との間の浮遊容量Ｃｇｄを１／３～１／４に低減することができる。なお、浮遊容量低減の効果を得るための空洞２２の高さｂは特に限定されない。
　また、トランジスタ２の上方を複数のワイヤ２０で覆うことによりトランジスタ２と外部を複数のワイヤ２０で相互にシールドするため、トランジスタ２から輻射が外部に漏れる輻射ノイズを抑制することができる。
実施の形態２．
　図１４は、本発明の実施の形態２に係る高周波増幅器の内部を示す斜視図である。図１５は、本発明の実施の形態２に係る高周波増幅器の内部を示す断面図である。封止材２１等は図示を省略している。
　本実施の形態では、実施の形態１の複数のワイヤ２０の代わりに、複数の第１ワイヤ２０ａと、その上方に配置された複数の第２ワイヤ２０ｂとを用いる。複数の第１ワイヤ２０ａと複数の第２ワイヤ２０ｂの離間距離ｄは、両者が接触しない距離でフィラー２１ａの粒径ｃ以下である。
　半導体基板１の表面に対して垂直方向から見た平面視において、複数の第２ワイヤ２０ｂは複数の第１ワイヤ２０ａ間の隙間に配置されている。これにより、複数の第１ワイヤ２０ａ間の隙間が複数の第２ワイヤ２０ｂにより埋められ、トランジスタ２の上部のワイヤが密になるため、トランジスタ２と外部との電波干渉をシールドする作用が高まる。従って、トランジスタ２の輻射が外部に漏れる輻射ノイズを実施の形態１よりも抑制することができる。
実施の形態３．
　図１６，１７は、本発明の実施の形態３に係る高周波増幅器の内部を示す斜視図である。図１８は、本発明の実施の形態３に係る高周波増幅器の内部を示す断面図である。図１７は複数のワイヤ２０を省略している。封止材２１等は図示を省略している。
　トランジスタ２のソース電極９から独立したグランド配線２３，２４が設けられている。グランド配線２３，２４は、ソース電極９よりも外側に配置され、ソース電極９に接続されていない。複数のワイヤ２０は、トランジスタ２の上方を通ってグランド配線２３，２４に接続されている。グランド配線２３はそれぞれワイヤ２５，２６によりリードフレーム２７，２８に接続されている。グランド配線２４はそれぞれワイヤ２９，３０によりリードフレーム３１，３２に接続されている。
　複数のワイヤ２０は封止材２１の侵入を防ぐため低空に配置するため、ゲート電極３又はドレイン電極６と複数のワイヤ２０との間に若干の浮遊容量が発生する。従って、実施の形態１，２のように複数のワイヤ２０をソース配線１０，１１に接続すると、トランジスタ２の動作時にソース電圧が変動し、ゲート電極３とドレイン電極６との間の浮遊容量Ｃｇｄが変動してトランジスタ２の電気特性へ影響を及ぼす可能性がある。これを抑制するため、本実施の形態では複数のワイヤ２０をトランジスタ２のソース電極９から独立したグランド配線２３，２４に接続する。これにより、ゲート電極３又はドレイン電極６と複数のワイヤ２０との間の浮遊容量に対してソース配線１０，１１の電圧変化による影響を抑制することができる。
実施の形態４．
　図１９は、本発明の実施の形態４に係る高周波増幅器の内部を示す斜視図である。図２０は図１９のＩ－ＩＩに沿った断面図である。１つの半導体基板１の表面に、互いに離間した２つの第１及び第２のトランジスタ２ａ，２ｂが形成されている。この場合、第１及び第２のトランジスタ２ａ，２ｂの離間距離ｅが例えば４０μｍ程度と近いと、第１及び第２のトランジスタ２ａ，２ｂからそれぞれ発生された電界が相互に干渉する。一般に相互に干渉することは特性に悪影響を与える場合が多く、これをアイソレートするほうが良い。
　そこで、本実施の形態では、第１のトランジスタ２ａと第２のトランジスタ２ｂとの間を横切るワイヤ３４を設けている。第１及び第２のトランジスタ２ａ，２ｂの間において半導体基板１の表面上にアイソレート配線３６が形成されている。ワイヤ３４は、リードフレーム３７、アイソレート配線３６、及び他方のリードフレーム３８に接続されている。ワイヤ３４及びアイソレート配線３６は第１及び第２のトランジスタ２ａ，２ｂには接続されていない。
　ワイヤ３４が電波シールドとして作用し、第１及び第２のトランジスタ２ａ，２ｂから発生する電界の相互の干渉を抑制する。この結果、第１及び第２のトランジスタ２ａ，２ｂの電気特性に悪影響を与えるのを抑制することができる。
　なお、アイソレート配線３６を設けず、リードフレーム３７から第１のトランジスタ２ａと第２のトランジスタ２ｂとの間を横切って他方のリードフレーム３８にワイヤ３４を接続してもよい。
１　半導体基板、２　トランジスタ、２ａ　第１のトランジスタ、２ｂ　第２のトランジスタ、３　ゲート電極、６　ドレイン電極、９　ソース電極、１０，１１　ソース配線、２０，３４　ワイヤ、２０ａ　第１ワイヤ、２０ｂ　第２ワイヤ、２１　封止材、２１ａ　フィラー、２２　空洞、２３，２４　グランド配線、３６　アイソレート配線

Claims (6)

  1. 　半導体基板と、
    　前記半導体基板の表面に形成され、ゲート電極、ソース電極及びドレイン電極を有するトランジスタと、
    　前記ゲート電極、前記ソース電極及び前記ドレイン電極を挟むように前記半導体基板の前記表面上に形成された第１及び第２の配線と、
    　前記ゲート電極、前記ソース電極及び前記ドレイン電極の上方を通って前記第１及び第２の配線に接続された複数のワイヤと、
    　前記トランジスタ、前記第１及び第２の配線、及び前記複数のワイヤを封止する封止材とを備え、
    　前記封止材はフィラーを含有し、
    　前記複数のワイヤの互いの離間距離は前記フィラーの粒径より狭く、
    　前記複数のワイヤと前記トランジスタとの間に前記封止材が入り込んでいない空洞が形成されていることを特徴とする高周波増幅器。
  2. 　前記複数のワイヤは、複数の第１ワイヤと、前記複数の第１ワイヤの上方に配置された複数の第２ワイヤとを有し、
    　前記半導体基板の前記表面に対して垂直方向から見た平面視において、前記複数の第２ワイヤは前記複数の第１ワイヤ間の隙間に配置されていることを特徴とする請求項１に記載の高周波増幅器。
  3. 　前記第１及び第２の配線は前記ソース電極に接続されていることを特徴とする請求項１又は２に記載の高周波増幅器。
  4. 　前記第１及び第２の配線は前記ソース電極から独立していることを特徴とする請求項１又は２に記載の高周波増幅器。
  5. 　半導体基板と、
    　前記半導体基板の表面に形成され、互いに離間した第１及び第２のトランジスタと、
    　前記第１及び第２のトランジスタに接続されておらず、前記第１のトランジスタと前記第２のトランジスタとの間を横切るワイヤとを備えることを特徴とする高周波増幅器。
  6. 　前記第１及び第２のトランジスタの間において前記半導体基板の前記表面上に形成され、前記第１及び第２のトランジスタに接続されていないアイソレート配線を更に備え、
    　前記ワイヤは前記アイソレート配線に接続されていることを特徴とする請求項５に記載の高周波増幅器。
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