JP4164013B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4164013B2 JP4164013B2 JP2003328546A JP2003328546A JP4164013B2 JP 4164013 B2 JP4164013 B2 JP 4164013B2 JP 2003328546 A JP2003328546 A JP 2003328546A JP 2003328546 A JP2003328546 A JP 2003328546A JP 4164013 B2 JP4164013 B2 JP 4164013B2
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Description
図1Aは、実施の形態1における、4ピン樹脂パッケージ構造を有する半導体装置の平面図である。図1Bは図1AのA−A’線に沿った断面図である。図2は、この半導体装置に組み込まれたソース用リードの平面形状を示す概略図である。
図5は、実施の形態2における半導体装置を示す平面図である。実施の形態1では、図1Aに示したように、ソース用リード20におけるダイパッド20aに接続される内部端子部20bを、ソース用ミアンダラインとして構成したが、本実施の形態では、ミアンダ型ではなく真っ直ぐである。
実施の形態3における半導体装置について、図6A〜Cを参照して説明する。図6Aは、半導体装置を、その樹脂パッキングを一部取り除いて示した平面図、図6Bは図6AのB−B’線に沿った断面図、図6Cは同半導体装置の回路図である。本実施の形態では、インダクタンス要素部を有する導体リードは、HEMTチップのゲートおよびドレインに接続されている。
2 ソース用リード
2a ダイパッド部
2b 内部端子部
2c 外部端子部
3 ゲート用リード
4 ドレイン用リード
5 HEMTチップ
6a、6b、6c ボンディングワイヤ
7 凹部
8 接着剤
9 キャップ
10 導電性接着剤
11 ソース電極・配線
11a ソース
12 ゲート電極・配線
12a ゲート
13 ドレイン電極・配線
13a ドレイン
20 ソース用リード
20a ダイパッド部
20b 内部端子部
20c 外部端子部
21 HEMTチップ
21a バイアホール
22 ソースインダクタ
23 ソース用リード
23a ダイパッド
23b 内部端子部
23c 外部端子部
30 ダイパッド
31 HEMTチップ
32 ソース用リード
32a ソース端子
33 ドレイン用リード
33a ドレイン端子
34 ゲート用リード
34a ゲート端子
35 ボンディングワイヤ
36 第1のインダクタ
37 第2のインダクタ
38 出力用リード端子
39 第3のインダクタ
40 第4のインダクタ
41 入力用リード端子
42 封止樹脂
Claims (3)
- 半導体チップと、前記半導体チップを封止した封止樹脂と、前記封止樹脂の内部から外部に亘って延在する複数本の導体リードとを備え、前記導体リードにおける前記封止樹脂内に配置された部分が内部端子部を形成し、前記封止樹脂外に配置された部分が外部端子部を形成し、前記半導体チップの電極と前記導体リードの内部端子部とが接続された半導体装置において、
前記導体リードのうちの少なくとも1本は、ミアンダ型の2つのインダクタンス要素部を有し、
前記2つのインダクタンス要素部を有する前記導体リードの前記外部端子は、前記2つのインダクタンス要素部間より分岐している半導体装置。 - 前記2つのインダクタンス要素部を有する前記導体リードは、前記半導体チップに形成された電界効果トランジスタのゲートまたはドレイン、あるいはバイポーラトランジスタのベースまたはコレクタに接続されている請求項1記載の半導体装置。
- 前記2つのインダクタンス要素部は、第1のインダクタ及び第2のインダクタであり、
前記第1のインダクタはチョークインダクタとして機能し、
前記第2のインダクタは整合素子として機能する請求項2記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003328546A JP4164013B2 (ja) | 2002-09-27 | 2003-09-19 | 半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002283165 | 2002-09-27 | ||
JP2003328546A JP4164013B2 (ja) | 2002-09-27 | 2003-09-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005033154A JP2005033154A (ja) | 2005-02-03 |
JP4164013B2 true JP4164013B2 (ja) | 2008-10-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003328546A Expired - Fee Related JP4164013B2 (ja) | 2002-09-27 | 2003-09-19 | 半導体装置 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100816758B1 (ko) | 2006-11-07 | 2008-03-25 | 삼성전자주식회사 | 반사파억제를 통한 신호특성이 향상된 멀티 칩 패키지 모듈을 테스트하는 테스트 장치 |
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2003
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