WO2018076996A1 - 显示面板及其制备方法 - Google Patents

显示面板及其制备方法 Download PDF

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Publication number
WO2018076996A1
WO2018076996A1 PCT/CN2017/103723 CN2017103723W WO2018076996A1 WO 2018076996 A1 WO2018076996 A1 WO 2018076996A1 CN 2017103723 W CN2017103723 W CN 2017103723W WO 2018076996 A1 WO2018076996 A1 WO 2018076996A1
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Prior art keywords
metal layer
substrate
black matrix
spacer
gate
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PCT/CN2017/103723
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English (en)
French (fr)
Inventor
吴鹏
蒋学兵
高吉磊
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US15/767,302 priority Critical patent/US20200251499A1/en
Publication of WO2018076996A1 publication Critical patent/WO2018076996A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • Embodiments of the present disclosure relate to a display panel and a method of fabricating the same.
  • Liquid crystal display has the advantages of low radiation, small size and low energy consumption, and is widely used in electronic products such as tablet computers, televisions or mobile phones.
  • the liquid crystal display panel includes an array substrate and a counter substrate, and a liquid crystal layer interposed therebetween.
  • the array substrate includes a metal layer which is typically formed into a film by magnetron sputtering (Sputter). That is, the plasma is formed by radio frequency or direct current voltage, and the charged ions in the plasma have high energy, so that the charged ions strike the surface of the metal target, and the target particles are impinged from the surface, thereby depositing on the surface of the substrate to form a metal thin film.
  • Sputter magnetron sputtering
  • Embodiments of the present disclosure provide a display panel and a method of fabricating the same, which can make a cell thickness of a liquid crystal display panel uniform.
  • At least one embodiment of the present disclosure provides a display panel including a first substrate and a second substrate disposed on a cartridge;
  • a metal layer, a black matrix and a spacer layer are disposed between the first substrate and the second substrate, and the spacer layer comprises a plurality of spacers;
  • Each of the spacer, the black matrix, and the metal layer has at least partial overlap of orthographic projections on the first substrate; at a corresponding position of each of the spacers, along a vertical In the direction of the first substrate, the thickness of the spacer, the metal layer and the black matrix are equal.
  • the plurality of spacers have the same thickness;
  • the metal layer and the black matrix have the same thickness and uniformity at corresponding positions of the spacers.
  • a display panel includes a plurality of first regions and a plurality of second regions, wherein the metal layers have different thicknesses in the first region and the second region; And the plurality of first regions and the plurality of second regions are alternately arranged; the black matrix has different thicknesses in the first region and the second region.
  • the metal layer is disposed on the first substrate; the black matrix and the spacer are disposed on the second substrate.
  • a metal layer includes a gate metal layer, the gate metal layer includes a gate line, and an orthographic projection of the spacer and the gate line on the first substrate There is at least partial overlap.
  • a metal layer includes a gate metal layer and a source/drain metal layer, the gate metal layer includes a gate and a gate line, and the source/drain metal layer includes a source and a drain.
  • a data line; a gate insulating layer and an active layer are further disposed on the display panel, the gate, the gate insulating layer, the active layer, the source, and the drain constitute a TFT;
  • the spacer has at least partial overlap with an orthographic projection of the TFT on the first substrate.
  • the metal layer includes a gate metal layer and a source/drain metal layer, the gate metal layer includes a gate line, and the source/drain metal layer includes an auxiliary pattern; Corresponding to the gate line; the spacer and the orthographic projection of the auxiliary pattern on the first substrate at least partially overlap.
  • an area of an orthographic projection of the auxiliary pattern on the first substrate is smaller than an area of an orthographic projection of the spacer on the first substrate, A spacer is stuck on the auxiliary pattern.
  • At least one embodiment of the present disclosure provides a method of fabricating a display panel including a first substrate and a second substrate of a pair of cassettes; wherein a metal is formed between the first substrate and the second substrate a layer, a black matrix and a spacer layer, the spacer layer comprising a plurality of spacers; wherein the metal layer is formed by a magnetron sputtering process and a patterning process; the spacer layer, the black In the matrix and the metal layer, at least a partial overlap of each of the two orthographic projections on the first substrate; at a corresponding position of each of the spacers, in a direction perpendicular to the first substrate, The thickness of the spacer, the metal layer and the black matrix are equal.
  • the thickness of the spacer is The same is true; at the corresponding position of each of the spacers, by controlling the thickness of the black matrix, the thickness of the metal layer and the black matrix are equal.
  • the display panel includes a plurality of first regions and a plurality of second regions, and the thickness of the metal layers in the first regions and the second regions is not The same; wherein, the plurality of first regions and the plurality of second regions are alternately arranged; forming the black matrix comprises: forming a black matrix film by a coating process; wherein, by controlling an operating voltage of the coating device Controlling the discharge amount of the black matrix material such that the thickness of the black matrix film in the first region and the second region is different; exposing the black matrix film by using a mask, and forming the black matrix after development .
  • the metal layer is formed on the first substrate; and the black matrix and the spacer are both formed on the second substrate.
  • the metal layer includes a gate metal layer
  • the gate metal layer includes a gate line
  • the spacer and the gate line are on the first substrate
  • the orthographic projections at least partially overlap.
  • the metal layer includes a gate metal layer and a source/drain metal layer
  • the gate metal layer includes a gate and a gate line
  • the source/drain metal layer includes a source, a drain insulating layer and an active layer
  • the gate, the gate insulating layer, the active layer, the source, and the drain constitute a TFT
  • the spacer has at least partial overlap with an orthographic projection of the TFT on the first substrate.
  • the metal layer includes a gate metal layer and a source/drain metal layer, the gate metal layer includes a gate line, and the source/drain metal layer includes an auxiliary pattern; A pattern corresponds to the gate line; the spacer and the orthographic projection of the auxiliary pattern on the first substrate at least partially overlap.
  • an area of an orthographic projection of the auxiliary pattern on the first substrate is smaller than an area of an orthographic projection of the spacer on the first substrate.
  • the spacer is stuck on the auxiliary pattern.
  • 1 is a schematic view of metal film formation using a metal target
  • FIG. 2 is a schematic structural view of a liquid crystal display panel
  • FIG. 3 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure.
  • FIG. 4A is a schematic top view of a black matrix film according to an embodiment of the present disclosure.
  • Figure 4B is a schematic cross-sectional view taken along line AA' of Figure 4A;
  • FIG. 5 is a schematic diagram of a black matrix, a color filter layer, and a spacer disposed on a second substrate according to an embodiment of the present disclosure
  • 6A is a schematic structural diagram of a display panel corresponding to a grid line and a grid line according to an embodiment of the present disclosure
  • 6B is a top plan view of a film layer on a first substrate according to an embodiment of the present disclosure
  • FIG. 7 is a schematic structural diagram of a display panel corresponding to a TFT and a TFT according to an embodiment of the present disclosure
  • FIG. 8A is a schematic structural diagram of a display panel corresponding to a spacer and an auxiliary pattern according to an embodiment of the present disclosure
  • FIG. 8B is a top plan view of a film layer on a first substrate according to an embodiment of the present disclosure.
  • the metal target used for magnetron sputtering is generally formed by splicing a plurality of strip-shaped metal targets 101 and centering on the glass substrate 20 (after rotating the glass substrate 20 by 180 o , It completely coincides with the corresponding position of the front glass substrate 20 and the metal target 10).
  • the particles impinging on the surface of the metal target during the magnetron sputtering process must have a difference in particle distribution between the metal target central region 102 and the metal target splicing region 103, which is represented by the metal target central region 102 and the metal target splicing region 103.
  • the difference in thickness of the metal film causes the thickness of the metal thin film deposited on the glass substrate 20 to be periodically distributed, thereby causing a periodic change in the cell thickness of the liquid crystal display panel behind the cartridge. That is, the thickness of the box is not uniform (as shown in Figure 2). For example, when the thickness of the box is thick, the color temperature is too small, and the color is warmer. The color temperature is too large at the position where the thickness of the box is thin, and the color temperature is too cold, which causes a periodic distribution of colors on the display panel, which seriously affects the screen of the liquid crystal display panel. quality.
  • An embodiment of the present disclosure provides a display panel, as shown in FIG. 3, including a first substrate 30 and a second substrate 40 disposed on a cell; a metal layer is disposed between the first substrate 30 and the second substrate 40. 50.
  • the spacer layer 070 includes a plurality of spacers 70.
  • the spacers 70, the black matrix 60 and the metal layer 50 have at least partial overlap of the orthographic projections on the first substrate 30; at the corresponding positions of any of the spacers 70, along the vertical first substrate 30 In the direction, the thickness of the spacer 70, the metal layer 50, and the black matrix 60 are equal.
  • the metal layer 50, the black matrix 60, and the spacer 70 are not specifically disposed on the first substrate 30, or are disposed on the second substrate 40, such as the metal layer 50, the black matrix 60, and the spacer 70. It may be disposed on the first substrate 30 or the second substrate 40 at the same time, or may be disposed on the first substrate 30 and the second substrate 40, respectively.
  • the material of the black matrix 60 may be an organic material (for example, a resin) that is opaque to light, or an inorganic material that is opaque to light, as long as it can function as a light blocking.
  • an organic material for example, a resin
  • an inorganic material that is opaque to light, as long as it can function as a light blocking.
  • the material of the spacer 70 may be a photosensitive resin material or a non-photosensitive resin material.
  • the spacer 70 can be formed directly by a film forming, exposure, and development process.
  • the spacer 70 can be formed by film formation, photoresist formation, exposure, development, and etching processes.
  • the spacer 70 is used to support the first substrate 30 and the second substrate 40 in the display panel such that the display panel has a certain thickness.
  • the pattern of the metal layer 50 is not limited as long as its orthographic projection overlaps with the orthographic projection of the black matrix 60 and the spacer 70 on the first substrate 30.
  • the orthographic projections of any two on the first substrate 30 at least partially overlap that is, the spacers 70 and the black matrix 60 are in the first lining.
  • the thickness of the metal layer 50 at different locations is inconsistent.
  • the thickness of the spacer 70, the metal layer 50 and the black matrix 60 are equal, and the thickness of the black matrix 60 may be adjusted to make the position of any spacer 70 corresponding to the spacer 70, the metal layer 50 and the black matrix.
  • the thickness and the thickness of 60 are equal, and the spacer 70 or the metal layer 50 may be disposed at the corresponding position of the spacer 70 by adjusting the spacer 70 or simultaneously adjusting the thickness of the black matrix 60 and the spacer 70.
  • the thickness and the sum of the black matrix 60 are equal.
  • An embodiment of the present disclosure provides a display panel by providing a black matrix 60, a spacer 70, and a metal layer 50 between the first substrate 30 and the second substrate 40, and at a position corresponding to any of the spacers 70 At the same time, the thickness and the equal thickness of the black matrix 60, the spacer 70 and the metal layer 50 can make the thickness of the display panel uniform, so that the picture quality of the display panel can be improved.
  • the thickness of the spacers 70 at each position is the same; at the corresponding position of any of the spacers 70, the metal layer at each position can be made by adjusting the thickness of the black matrix 60 at different positions. 50 is equal to the thickness and the sum of the black matrix 60.
  • the thickness of the spacer 70 at each position is constant, and the black matrix 60 and the metal are controlled by controlling the thickness variation of the black matrix 60 so as to correspond to any spacer 70.
  • the thickness of layer 50 is the same.
  • the thickness of the spacer 70 and the black matrix 60 are controlled relatively simultaneously so that the thickness of the spacer 70, the black matrix 60, and the metal layer 50 is the same at the position corresponding to any of the spacers 70, since only black is required to be controlled.
  • the thickness of the matrix 60 varies, thereby simplifying the process.
  • the thickness variation of the metal layer 50 is changed according to the period of the metal target central region and the metal target splicing region, that is, corresponding to the first region and the second region of the display panel, the metal layer 50
  • the thickness is not the same.
  • the first area and the second area are alternately arranged.
  • the first region and the second region correspond to the metal target splicing region and the metal target central region, respectively.
  • the thickness variation of the black matrix 60 may be changed according to the period of the metal target central region and the metal target splicing region, that is, corresponding to the first region and the second region, the thickness of the black matrix is different, so that the corresponding first region is
  • the thickness of the black matrix 60 and the metal layer 50 is the same as that of the corresponding second region, the black matrix 60 and the metal layer 50.
  • the first region corresponds to the metal target splicing region
  • the second region corresponds to the metal target central region as an example, because the thickness of the metal layer corresponding to the metal target splicing region is thin, corresponding to the central region of the metal target The thickness is thick. Therefore, as shown in FIGS. 4A and 4B, when the black matrix film 601 is formed at the time of film formation before the black matrix 60 is formed, the discharge of the black matrix material can be controlled by controlling the operating voltage of the coating apparatus.
  • the thickness of the black matrix film 601 corresponding to the first region 01 and the second region 02 is different, that is, the thickness of the black matrix film 601 corresponding to the first region 01 is thicker, and the black matrix film 601 corresponding to the second region 02 The thickness is thin.
  • the black matrix film may be exposed using a conventional mask to form a black matrix 60 after development. That is, the thickness of the black matrix 60 in the first region 01 is greater than the thickness in the second region 02.
  • the thickness of the black matrix 60 corresponding to the first region 01 and the second region 02 can be made different by changing the thickness of the black matrix 60 by region. This process does not need to perform a Mask design change, and is only optimized from the process. ,cut costs.
  • the amount of discharge of the black matrix material can be controlled by adjusting the operating voltage of the coating apparatus when the black matrix 60 is fabricated.
  • a metal layer 50 is disposed on the first substrate 30; a black matrix 60 and a spacer 70 are disposed on the second substrate 40.
  • the spacer 70 may be disposed on a side of the black matrix 60 away from the second substrate 40.
  • the metal layer 50 and the black matrix 60 and the spacer 70 are respectively disposed on different substrates, and the manufacturing process of the design is mature, and no major adjustment is needed to the manufacturing process, thereby avoiding an increase in production cost. .
  • a color filter layer is disposed on the second substrate 40.
  • the color filter layer includes filter patterns of three primary colors of the first primary color filter pattern 81, the second primary color filter pattern 82, and the third primary color filter pattern 83.
  • each of the first primary color filter patterns 81, each of the second primary color filter patterns 82, and each of the third primary color filter patterns 83 are respectively located in one sub-pixel.
  • the black matrix 60 may be formed on the second substrate 40; thereafter, the first primary color filter pattern 81, the second primary color filter pattern 82, and the third primary color filter pattern 83 are formed, respectively.
  • the first primary color filter pattern 81, the second primary color filter pattern 82, and the third primary color filter pattern 83 are respectively formed in three sub-pixels of each pixel, and the filter patterns in adjacent sub-pixels pass through the black matrix 60. Separated. Thereafter, a spacer 70 is formed, and the orthographic projection of the spacer 70 on the second substrate 40 coincides with the orthographic projection of the black matrix 60 on the second substrate 40.
  • the metal layer 50 includes a gate metal layer including a gate 501 and a gate line 502; and the orthographic projection of the spacer 70 and the gate line 502 on the first substrate 30 is at least There is partial overlap.
  • a gate insulating layer, an active layer, and a source/drain metal layer may be disposed on the first substrate 30, and the source/drain metal layer includes a source 503, a drain 504, and a data line 505.
  • the gate 501, the gate insulating layer, the active layer, the source 503, and the drain 504 may constitute a Thin Film Transistor (TFT).
  • TFT Thin Film Transistor
  • the first substrate corresponding to the spacer 70 in the first region 01 may be The sum of the film thicknesses on 30 is denoted by D a , and the sum of the film thicknesses on the first substrate 30 corresponding to the spacers 70 in the second region 02 can be referred to as D b . Since the thickness of the gate line 502 is thinner corresponding to the first region 01, and the thickness of the gate line 502 is thicker corresponding to the second region 02, the thickness of the black matrix corresponding to the first region 01 can be D1, corresponding to the second region.
  • a thickness of the display panel may be such that the cartridge are the GapA level, Thereby achieving uniformity of the thickness of the display panel.
  • the above thickness may be a thickness perpendicular to the direction of the first substrate or the second substrate.
  • the first substrate 30 is further provided with a pixel electrode 91 and a common electrode 92.
  • a multi-dimensional electric field can be generated between the pixel electrode 91 and the common electrode 92 to drive the liquid crystal to rotate.
  • the common electrode 92 can also be disposed on the second substrate 40.
  • the pixel electrode 91 is a slit electrode
  • the common electrode 92 may be a plate electrode, but is not limited thereto.
  • Embodiments of the present disclosure use the spacer 70 for supporting the thickness of the box by having the orthographic projection of the spacer 70 on the first substrate 30 at least partially overlap the orthographic projection of the gate line 502 on the first substrate 30. In this case, the effect on the effective display area can also be avoided.
  • the metal layer 50 includes a gate metal layer and a source/drain metal layer
  • the gate metal layer includes a gate 501 and a gate line 502
  • the source/drain metal layer includes a source 503 and a drain.
  • a display insulating panel 506 and an active layer 507 are further disposed on the display panel, and the gate 501, the gate insulating layer 506, the active layer 507, the source 503 and the drain 504 constitute a TFT; There is at least partial overlap of the orthographic projection of the TFT on the first substrate 30.
  • the gate metal layer, the source/drain metal layer, the gate insulating layer 506, and the active layer 507 are all disposed on the first substrate 30 as an example.
  • the first region 01 corresponds to the metal target splicing region
  • the second region 02 corresponds to the metal target central region as an example.
  • the corresponding portion corresponding to the spacer 70 in the first region 01 may be used.
  • the sum of the film thicknesses on a substrate 30 is denoted by D a
  • the sum of the film thicknesses on the first substrate 30 corresponding to the spacers 70 in the second region 02 can be referred to as D b . Since the thickness of the gate metal layer and the source/drain metal layer is thinner corresponding to the first region 01, and the thickness of the gate metal layer and the source/drain metal layer is thicker corresponding to the second region 02, the corresponding first region 01 can be made.
  • the box thickness of the panel is the level of GapA, thereby achieving uniformity of the thickness of the display panel.
  • the type of the TFT is not limited in the present disclosure, and may be a bottom gate type or a top gate type.
  • the effective display area can be avoided. Impact.
  • the metal layer 50 includes a gate metal layer and a source/drain metal layer
  • the gate metal layer includes a gate 501 and a gate line 502
  • the source/drain metal layer includes a source 503 and a drain.
  • the pole 504, the data line 505 and the auxiliary pattern 508; the auxiliary pattern 508 corresponds to the gate line 502; the orthographic projection of the spacer 70 and the auxiliary pattern 508 on the first substrate 30 at least partially overlaps.
  • a gate metal layer and a source/drain metal layer are disposed on the first substrate 30 as an example.
  • a gate insulating layer may be disposed on the first substrate 30.
  • the source layer, the gate electrode 501, the gate insulating layer, the active layer, the source electrode 503, and the drain electrode 504 constitute a TFT.
  • the first region 01 corresponds to the metal target splicing region
  • the second region 02 corresponds to the metal target central region as an example.
  • the corresponding portion corresponding to the spacer 70 in the first region 01 may be used.
  • the sum of the film thicknesses on a substrate 30 is denoted as D a
  • the sum of the film thicknesses on the first substrate 30 corresponding to the spacers 70 in the second region 02 can be denoted as D b . Since the thickness of the gate metal layer and the source/drain metal layer is thinner corresponding to the first region 01, and the thickness of the gate metal layer and the source/drain metal layer is thicker corresponding to the second region 02, the corresponding first region 01 can be made.
  • the box thickness of the panel is the level of GapA, thereby achieving uniformity of the thickness of the display panel.
  • auxiliary pattern 508 and the source 503 and the drain 504 can be formed by the same patterning process.
  • the material of the spacer is a resin material having a certain elasticity
  • the auxiliary pattern 508 is at the first
  • the area of the orthographic projection on the substrate 30 is smaller than the area of the orthographic projection of the spacer 70 on the first substrate 30, so that the spacer 70 can be caught on the auxiliary pattern 508, thereby reducing the spacer 70 and the first lining.
  • the relative movement between the film layers on the bottom 30 avoids the instability of the support and the effect of static electricity from the friction on the liquid crystal display panel.
  • the display panel includes a first substrate 30 and a second substrate 40 of the pair of substrates; and the first substrate 30 and the second substrate 40 There is a metal layer 50, a black matrix 60, and a spacer layer 070 interposed therebetween, and the spacer layer 070 includes a plurality of spacers 70.
  • the metal layer 50 is formed by a magnetron sputtering process and a patterning process.
  • the spacers 70, the black matrix 60 and the metal layer 50 have at least partial overlap of the orthographic projections on the first substrate 30; at the corresponding positions of any of the spacers 70, along the vertical first substrate 30 In the direction, the thickness of the spacer 70, the metal layer 50, and the black matrix 60 are equal.
  • Embodiments of the present disclosure provide a method of fabricating a display panel by fabricating a black matrix 60, a spacer 70, and a metal layer 50 between a first substrate 30 and a second substrate 40, and in any spacer 70 At the corresponding positions, the thickness and the equality of the black matrix 60, the spacer 70, and the metal layer 50 can make the thickness of the display panel uniform, so that the picture quality of the display panel can be improved.
  • the thickness of the spacers 70 are all the same; at the corresponding positions of any of the spacers 70, the thickness of the metal layer 03 and the black matrix 60 are made equal by controlling the thickness of the black matrix 60.
  • the thickness variation of the black matrix 60 is controlled so that the thickness of the black matrix 60 and the metal layer 50 is the same at the position corresponding to any of the spacers 70.
  • the thickness of the spacer 70 and the black matrix 60 are controlled relatively simultaneously so that the spacers 70, the black matrix 60, and the metal layer 50 have the same thickness and the same position at which the spacers 70 correspond.
  • the thickness of the spacer 70 is constant, it is only necessary to control the thickness variation of the black matrix 60, so that the process can be simplified.
  • the thickness of the metal layer 50 is different for the first region and the second region of the display panel; for example, the first region and the second region are alternately arranged.
  • a black matrix 60 is formed; including: a black matrix film 601 is formed by a coating process as shown in FIGS. 4A and 4B.
  • the discharge amount of the black matrix material is controlled by controlling the operating voltage of the coating device so that the thickness of the black matrix film 601 corresponding to the first region 01 and the second region 02 is different; and the black matrix film 601 is exposed by using a mask. After development, a black matrix is formed.
  • first region 01 and the second region 02 are combined with the metal target splicing region and the metal target central region correspond.
  • the coating amount of the black matrix material is increased by increasing the operating voltage of the coating device, so that the thickness of the black matrix film 601 corresponding to the first region 01 is thickened.
  • the coating amount of the black matrix material is controlled to be reduced by reducing the operating voltage of the coating device, so that the thickness of the black matrix film 601 corresponding to the second region 02 is thinned.
  • the discharge amount of the black matrix material is controlled by controlling the working voltage of the coating device, so that the thickness of the black matrix film corresponding to the first region and the second region is different, and the process does not need to be masked.
  • the design of the mask By changing the design of the mask, a black matrix 60 whose thickness varies by region can be formed, thereby reducing the cost.
  • the black matrix film may be exposed and developed using a gray matrix mask to form a black matrix 60 having a thickness varying by region.
  • a black matrix can also be formed by an inkjet printing process.
  • a metal layer 50 is formed on the first substrate 30; both the black matrix 60 and the spacers 70 are formed on the second substrate 40.
  • the spacer 70 may be formed on a side of the black matrix 60 away from the second substrate 40.
  • the metal layer 50 and the black matrix 60 and the spacer 70 are respectively disposed on different substrates, and the manufacturing process of the design is mature, and no major adjustment is needed to the manufacturing process, thereby avoiding an increase in production cost. .
  • a color filter layer may also be formed on the second substrate 40.
  • the color filter layer includes filter patterns of three primary colors of the first primary color filter pattern 81, the second primary color filter pattern 82, and the third primary color filter pattern 83.
  • the black matrix 60 may be formed on the second substrate 40; thereafter, the first primary color filter pattern 81, the second primary color filter pattern 82, and the third primary color filter pattern 83 are formed, respectively.
  • the first primary color filter pattern 81, the second primary color filter pattern 82, and the third primary color filter pattern 83 are respectively formed in three sub-pixels of each pixel, and the filter patterns in adjacent sub-pixels pass through the black matrix 60. Separated. Thereafter, the spacer 70 is formed.
  • the spacer 70 coincides with the orthographic projection of the black matrix 60 on the second substrate 40.
  • the metal layer 50 includes a gate metal layer including a gate electrode 501 and a gate line 502.
  • the spacers 70 and the orthographic projections of the gate lines 502 on the first substrate 30 at least partially overlap.
  • the shadows at least partially overlap, and in the case where the spacer 70 is used to support the thickness of the case, the influence on the effective display area can be avoided.
  • the metal layer 50 includes a gate metal layer and a source/drain metal layer
  • the gate metal layer includes a gate 501 and a gate line 502
  • the source/drain metal layer includes a source 503 and a drain.
  • a gate insulating layer 506 and an active layer 507 may also be formed on the display panel, and the gate electrode 501, the gate insulating layer 506, the active layer 507, the source electrode 503, and the drain electrode 504 constitute a TFT.
  • the spacer 70 has at least partial overlap with the orthographic projection of the TFT on the first substrate 30. By at least partially overlapping the spacer 70 with the orthographic projection of the TFT on the first substrate 30, it is also possible to avoid the effect on the effective display area in the case where the spacer 70 is used to support the thickness of the case.
  • the metal layer 50 includes a gate metal layer including a gate 501 and a gate line 502, and a source/drain metal layer including a source 503, a drain 504, and a data.
  • the auxiliary pattern 508 corresponds to the gate line 502; the orthographic projection of the spacer 70 and the auxiliary pattern 508 on the first substrate 30 at least partially overlaps.
  • the auxiliary pattern 508 is formed by the same patterning process as the source 503 and the drain 504.
  • the material of the spacer is a resin material having a certain elasticity, and the area of the orthographic projection of the auxiliary pattern 508 on the first substrate 30 is smaller than the area of the orthographic projection of the spacer 70 on the first substrate 30, The spacer 70 is stuck on the auxiliary pattern 508, thereby reducing the relative movement between the spacer 70 and the film layer on the first substrate 30, avoiding unstable support, and the influence of static electricity caused by friction on the liquid crystal display panel. .
  • liquid crystal display panel has been described above as an example, but the embodiment of the present disclosure is not limited thereto, and may be applied to other display panels such as a light-emitting diode display panel.

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Abstract

提供一种显示面板及其制备方法。该显示面板包括对盒设置的第一衬底(30)和第二衬底(40)；第一衬底(30)和第二衬底(40)之间设置有金属层(50)、黑矩阵(60)和隔垫物层(070)，隔垫物层(070)包括多个隔垫物(70)；隔垫物(70)、黑矩阵(60)和金属层(50)中，每两个在第一衬底(30)上的正投影至少存在部分重叠；在各隔垫物(70)对应位置处，沿垂直第一衬底(30)的方向，隔垫物(70)、金属层(50)与黑矩阵(60)的厚度和均相等。用于显示面板的制备。可使显示面板的盒厚均匀。

Description

显示面板及其制备方法
相关申请的交叉引用
本专利申请要求于2016年10月24日递交的中国专利申请第201610937784.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种显示面板及其制备方法。
背景技术
液晶显示器(Liquid Crystal Display，简称LCD)具有低辐射、体积小及低耗能等优点，被广泛地应用在平板电脑、电视或手机等电子产品中。
液晶显示面板包括阵列基板和对盒基板、以及位于二者之间的液晶层。阵列基板包括金属层，其一般通过磁控溅射(Sputter)来进行金属成膜。即，通过射频或者直流电压形成等离子体(Plasma)，等离子体内具有高能的带电离子，使带电离子撞击金属靶材表面，将靶材粒子从表面撞击出来，从而沉积到基板表面形成金属薄膜。
发明内容
本公开的实施例提供一种显示面板及其制备方法，可使液晶显示面板的盒厚均匀。
本公开至少一实施例提供一种显示面板，包括对盒设置的第一衬底和第二衬底；其中，
所述第一衬底和所述第二衬底之间设置有金属层、黑矩阵和隔垫物层，所述隔垫物层包括多个隔垫物；
所述隔垫物、所述黑矩阵和所述金属层中，每两个在所述第一衬底上的正投影至少存在部分重叠；在各所述隔垫物对应位置处，沿垂直所述第一衬底的方向，所述隔垫物、所述金属层与所述黑矩阵的厚度和均相等。
根据本公开一实施例提供的显示面板，所述多个隔垫物的厚度均相同； 在各所述隔垫物对应位置处，所述金属层与所述黑矩阵的厚度和均相等。
根据本公开一实施例提供的显示面板，所述显示面板包括多个第一区域和多个第二区域，所述金属层在所述第一区域和所述第二区域的厚度不相同；其中，所述多个第一区域和所述多个第二区域交替排布；所述黑矩阵在所述第一区域和所述第二区域的厚度不相同。
根据本公开一实施例提供的显示面板，所述金属层设置在所述第一衬底上；所述黑矩阵和所述隔垫物设置在所述第二衬底上。
根据本公开一实施例提供的显示面板，所述金属层包括栅金属层，所述栅金属层包括栅线；所述隔垫物与所述栅线在所述第一衬底上的正投影至少存在部分重叠。
根据本公开一实施例提供的显示面板，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅极和栅线，所述源漏金属层包括源极、漏极和数据线；所述显示面板上还设置有栅绝缘层和有源层，所述栅极、所述栅绝缘层、所述有源层、所述源极和所述漏极构成TFT；所述隔垫物与所述TFT在所述第一衬底上的正投影至少存在部分重叠。
根据本公开一实施例提供的显示面板，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅线，所述源漏金属层包括辅助图案；所述辅助图案与所述栅线对应；所述隔垫物与所述辅助图案在所述第一衬底上的正投影至少存在部分重叠。
根据本公开一实施例提供的显示面板，所述辅助图案在所述第一衬底上的正投影的面积小于所述隔垫物在所述第一衬底上的正投影的面积，所述隔垫物卡在所述辅助图案上。
本公开至少一实施例提供一种显示面板的制备方法，所述显示面板包括对盒的第一衬底和第二衬底；其中，在第一衬底和第二衬底之间形成有金属层、黑矩阵和隔垫物层，所述隔垫物层包括多个隔垫物；其中，所述金属层通过磁控溅射工艺和构图工艺形成；所述隔垫物层、所述黑矩阵和所述金属层中，每两个在所述第一衬底上的正投影至少存在部分重叠；在各所述隔垫物对应位置处，沿垂直所述第一衬底的方向，所述隔垫物、所述金属层与所述黑矩阵的厚度和均相等。
根据本公开一实施例提供的显示面板的制备方法，所述隔垫物的厚度均 相同；在各所述隔垫物对应位置处，通过控制形成所述黑矩阵的厚度，使所述金属层与所述黑矩阵的厚度和均相等。
根据本公开一实施例提供的显示面板的制备方法，所述显示面板包括多个第一区域和多个第二区域，所述金属层在所述第一区域和所述第二区域的厚度不相同；其中，所述多个第一区域和所述多个第二区域交替排布；形成所述黑矩阵包括：采用涂覆工艺形成黑矩阵薄膜；其中，通过控制涂覆设备的工作电压来控制黑矩阵材料的吐出量，使所述黑矩阵薄膜在所述第一区域和所述第二区域的厚度不相同；采用掩模板对所述黑矩阵薄膜进行曝光，显影后形成所述黑矩阵。
根据本公开一实施例提供的显示面板的制备方法，所述金属层在所述第一衬底上形成；所述黑矩阵和所述隔垫物均在所述第二衬底上形成。
根据本公开一实施例提供的显示面板的制备方法，所述金属层包括栅金属层，所述栅金属层包括栅线；所述隔垫物与所述栅线在所述第一衬底上的正投影至少存在部分重叠。
根据本公开一实施例提供的显示面板的制备方法，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅极和栅线，所述源漏金属层包括源极、漏极和数据线；所述显示面板中还形成有栅绝缘层和有源层，所述栅极、所述栅绝缘层、所述有源层、所述源极和所述漏极构成TFT；所述隔垫物与所述TFT在所述第一衬底上的正投影至少存在部分重叠。
根据本公开一实施例提供的显示面板的制备方法，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅线，所述源漏金属层包括辅助图案；所述辅助图案与所述栅线对应；所述隔垫物与所述辅助图案在所述第一衬底上的正投影至少存在部分重叠。
根据本公开一实施例提供的显示面板的制备方法，所述辅助图案在所述第一衬底上的正投影的面积小于所述隔垫物在所述第一衬底上的正投影的面积，所述隔垫物卡在所述辅助图案上。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图1为一种使用金属靶材进行金属成膜的示意图；
图2为一种液晶显示面板的结构示意图；
图3为本公开一实施例提供的一种显示面板的结构示意图；
图4A为本公开一实施例提供的一种黑矩阵薄膜的俯视示意图；
图4B为图4A中AA′向的截面示意图；
图5为本公开一实施例提供的一种在第二衬底上设置黑矩阵、彩色滤光层和隔垫物的示意图；
图6A为本公开一实施例提供的一种隔垫物与栅线对应的显示面板的结构示意图；
图6B为本公开一实施例提供的一种第一衬底上各膜层的俯视示意图一；
图7为本公开一实施例提供的一种隔垫物与TFT对应的显示面板的结构示意图；
图8A为本公开一实施例提供的一种隔垫物与辅助图案对应的显示面板的结构示意图；
图8B为本公开一实施例提供的一种第一衬底上各膜层的俯视示意图二。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
例如，如图1所示，由于磁控溅射使用的金属靶材一般采用多个条状金属靶材101拼接而成，且与玻璃基板20呈中心对应(将玻璃基板20旋转180o后，与旋转前玻璃基板20和金属靶材10的对应位置完全重合)。
在磁控溅射过程中金属靶材表面撞击出来的粒子在金属靶材中心区102和金属靶材拼接区103必然存在粒子分布差异，表现为金属靶材中心区102和金属靶材拼接区103的金属膜厚差异，导致玻璃基板20上沉积的金属薄膜的厚度呈周期分布，从而导致对盒后的液晶显示面板的盒厚也呈周期性变化， 即盒厚不均匀(如图2所示)。例如，盒厚较厚的位置处色温偏小，偏暖色，盒厚较薄的位置处色温偏大，偏冷色，导致在显示面板显示时呈现颜色上的周期分布，严重影响液晶显示面板的画面质量。
本公开实施例提供一种显示面板，如图3所示，包括对盒设置的第一衬底30和第二衬底40；第一衬底30和第二衬底40之间设置有金属层50、黑矩阵60和隔垫物层070，隔垫物层070包括多个隔垫物70。隔垫物70、黑矩阵60和金属层50中，任意两者在第一衬底30上的正投影至少存在部分重叠；在任意隔垫物70对应位置处，沿垂直第一衬底30的方向，隔垫物70、金属层50与黑矩阵60的厚度和均相等。
有以下几点需要说明。
第一，不对金属层50、黑矩阵60和隔垫物70具体设置在第一衬底30，还是设置在第二衬底40上进行限定，例如金属层50、黑矩阵60和隔垫物70可以同时设置于第一衬底30或第二衬底40上，也可以分设在第一衬底30和第二衬底40上。
例如，黑矩阵60的材料可以是不透光的有机材料(例如树脂)，也可以是不透光的无机材料，只要能起到遮光作用即可。
例如，隔垫物70的材料可以为感光树脂材料，也可以为非感光树脂材料。当隔垫物70的材料为感光树脂材料时，可直接通过成膜、曝光和显影工艺，形成隔垫物70。当隔垫物70的材料为非感光树脂材料时，可通过成膜、形成光刻胶、曝光、显影和刻蚀工艺，形成隔垫物70。在显示面板中隔垫物70用于支撑第一衬底30和第二衬底40，使显示面板具有一定的盒厚。
对于金属层50的图形不做限定，只要其正投影与黑矩阵60和隔垫物70在第一衬底30上的正投影重叠即可。
第二，隔垫物70、黑矩阵60和金属层50中，任意两者在第一衬底30上的正投影至少存在部分重叠，即为：隔垫物70和黑矩阵60在第一衬底30上的正投影至少存在部分重叠，隔垫物70和金属层50在第一衬底30上的正投影至少存在部分重叠，黑矩阵60和金属层50在第一衬底30上的正投影至少存在部分重叠。至少存在部分重叠，即为具有重叠面积。
第三，如前所述，受限于制备金属层50时的磁控溅射工艺限制，导致金属层50在不同位置处的厚度不一致。为了使得在任意隔垫物70对应位置处， 隔垫物70、金属层50与黑矩阵60的厚度和均相等，可以是通过调节黑矩阵60的厚度，来使任意隔垫物70对应位置处，隔垫物70、金属层50与黑矩阵60的厚度和均相等，也可以是通过调节隔垫物70，或同时调节黑矩阵60和隔垫物70的厚度，来使任意隔垫物70对应位置处，隔垫物70、金属层50与黑矩阵60的厚度和均相等。
例如，图3中仅以通过调节不同位置处的黑矩阵60的厚度，来使任意隔垫物70对应位置处，隔垫物70、金属层50与黑矩阵60的厚度和均相等为例进行示意。
本公开实施例提供一种显示面板，通过在第一衬底30和第二衬底40之间设置黑矩阵60、隔垫物70和金属层50，并使在任意隔垫物70对应的位置处，黑矩阵60、隔垫物70和金属层50的厚度和相等，可使显示面板的盒厚均匀，从而可以提高显示面板的画面质量。
例如，如图3所示，各位置处隔垫物70的厚度均相同；在任意隔垫物70对应位置处，可通过调节不同位置处的黑矩阵60的厚度，来使得各位置处金属层50与黑矩阵60的厚度和均相等。
本公开一实施例提供的显示面板中，各位置处的隔垫物70的厚度不变，通过控制黑矩阵60的厚度变化，以使任意隔垫物70对应的位置处，黑矩阵60和金属层50的厚度和相同。例如，相对同时控制隔垫物70和黑矩阵60的厚度，来使任意隔垫物70对应的位置处，隔垫物70、黑矩阵60和金属层50的厚度和相同，由于仅需控制黑矩阵60的厚度变化，因而可简化工艺。
考虑到在金属层50制作时，金属层50的厚度变化是按金属靶材中心区和金属靶材拼接区周期变化的，即，对应显示面板的第一区域和第二区域，金属层50的厚度不相同。例如，第一区域和第二区域交替排布。此处第一区域和第二区域分别与金属靶材拼接区和金属靶材中心区对应。
例如，可使得黑矩阵60的厚度变化也按照金属靶材中心区和金属靶材拼接区的周期变化，即对应第一区域和第二区域，黑矩阵的厚度不相同，以使对应第一区域，黑矩阵60和金属层50的厚度和，与对应第二区域，黑矩阵60和金属层50的厚度和相同。
例如，以第一区域对应金属靶材拼接区，第二区域对应金属靶材中心区为例，由于金属层对应金属靶材拼接区的厚度较薄，对应金属靶材中心区的 厚度较厚，因而，如图4A和图4B所示，在形成黑矩阵60之前的成膜时，即形成黑矩阵薄膜601时，可通过控制涂覆设备的工作电压来控制黑矩阵材料的吐出量，使对应第一区域01和第二区域02的黑矩阵薄膜601的厚度不相同，即，对应第一区域01的黑矩阵薄膜601的厚度较厚，对应第二区域02的黑矩阵薄膜601的厚度较薄。例如，可采用普通掩模板对黑矩阵薄膜进行曝光，显影后形成黑矩阵60。即，黑矩阵60在第一区域01的厚度大于在第二区域02的厚度。
本公开实施例中，可通过使黑矩阵60的厚度按区域变化，使对应第一区域01和第二区域02的黑矩阵60的厚度不同，此过程无需进行Mask设计变更，仅从工艺上优化，降低成本。可在制作黑矩阵60时，通过调节涂覆设备的工作电压来控制黑矩阵材料的吐出量。
例如，如图3所示，金属层50设置在第一衬底30上；黑矩阵60和隔垫物70设置在第二衬底40上。
例如，隔垫物70可设置在黑矩阵60远离第二衬底40的一侧。
本公开实施例中，可分别将金属层50与黑矩阵60和隔垫物70位于不同的衬底上，此设计的制作工艺成熟，无需对制造工艺做出较大调整，避免生产成本的提高。
进一步例如，如图5所示，彩色滤光层设置在第二衬底40上。例如，彩色滤光层包括第一基色滤光图案81、第二基色滤光图案82和第三基色滤光图案83三种基色的滤光图案。例如，每个第一基色滤光图案81、每个第二基色滤光图案82、每个第三基色滤光图案83分别位于一个子像素中。
例如，可先在第二衬底40上形成黑矩阵60；之后分别形成第一基色滤光图案81、第二基色滤光图案82和第三基色滤光图案83。例如，第一基色滤光图案81、第二基色滤光图案82和第三基色滤光图案83分别形成在每个像素的三个子像素中，相邻子像素中的滤光图案通过黑矩阵60隔开。之后，形成隔垫物70，隔垫物70在第二衬底40上的正投影与黑矩阵60在第二衬底40上的正投影重合。
例如，如图6A和图6B所示，金属层50包括栅金属层，栅金属层包括栅极501和栅线502；隔垫物70与栅线502在第一衬底30上的正投影至少存在部分重叠。
例如，图6A中以栅金属层设置在第一衬底30上为例进行说明。例如，如图6B所示，第一衬底30上还可设置栅绝缘层、有源层、源漏金属层，源漏金属层包括源极503、漏极504和数据线505。栅极501、栅绝缘层、有源层、源极503和漏极504可构成薄膜晶体管(Thin Film Transistor，TFT)。
以第一区域01对应金属靶材拼接区，第二区域02对应金属靶材中心区为例，如图6A所示，可将在第一区域01中与隔垫物70对应的第一衬底30上的膜层厚度总和记为Da，可将在第二区域02中与隔垫物70对应的第一衬底30上的膜层厚度总和记为Db。由于对应第一区域01，栅线502的厚度较薄，而对应第二区域02，栅线502的厚度较厚，因此，可使对应第一区域01的黑矩阵厚度为D1，对应第二区域02的黑矩阵厚度，相对第一区域01的黑矩阵厚度进行适量减薄，其厚度记为D2，使D1-D2＝Db-Da，可使得显示面板的盒厚均为GapA的水平，从而实现显示面板盒厚的均匀性。
需要说明的是，上述厚度可以为垂直于第一衬底或第二衬底方向的厚度。
进一步的，如图6B所示，第一衬底30上还设置有像素电极91和公共电极92。例如，像素电极91和公共电极92之间可产生多维电场以驱动液晶旋转。当然，公共电极92也可设置在第二衬底40上。例如，像素电极91为狭缝状电极，公共电极92可为板状电极，但不限于此。
本公开实施例通过使隔垫物70在第一衬底30上的正投影与栅线502在第一衬底30上的正投影至少部分重叠，在使隔垫物70用于支撑盒厚的情况下，还可以避免对有效显示区域的影响。
或者，可选的，如图7和图6B所示，金属层50包括栅金属层和源漏金属层，栅金属层包括栅极501和栅线502，源漏金属层包括源极503、漏极504和数据线505；显示面板上还设置有栅绝缘层506和有源层507，栅极501、栅绝缘层506、有源层507、源极503和漏极504构成TFT；隔垫物70与TFT在第一衬底30上的正投影至少存在部分重叠。
例如，图7中以栅金属层、源漏金属层、栅绝缘层506、有源层507均设置在第一衬底30上为例进行说明，
此处，以第一区域01对应金属靶材拼接区，第二区域02对应金属靶材中心区为例，如图7所示，可将在第一区域01中与隔垫物70对应的第一衬底30上的膜层厚度总和记为Da，可将在第二区域02中与隔垫物70对应的 第一衬底30上的膜层厚度总和记为Db。由于对应第一区域01，栅金属层和源漏金属层的厚度较薄，而对应第二区域02，栅金属层和源漏金属层的厚度较厚，因此，可使对应第一区域01的黑矩阵厚度为D1，对应第二区域02的黑矩阵厚度，相对第一区域01的黑矩阵厚度进行适量减薄，其厚度记为D2，使D1-D2＝Db-Da，可使得显示面板的盒厚均为GapA的水平，从而实现显示面板盒厚的均匀性。
需要说明的是，本公开中不对TFT的类型进行限定，可以是底栅型，也可以是顶栅型。
本公开实施例中，通过使隔垫物70与TFT在第一衬底30上的正投影至少部分重叠，在使隔垫物70用于支撑盒厚的情况下，还可以避免对有效显示区域的影响。
或者，可选的，如图8A和图8B所示，金属层50包括栅金属层和源漏金属层，栅金属层包括栅极501和栅线502，源漏金属层包括源极503、漏极504、数据线505和辅助图案508；辅助图案508与栅线502对应；隔垫物70与辅助图案508在第一衬底30上的正投影至少存在部分重叠。
例如，图8A和图8B中以栅金属层、源漏金属层均设置在第一衬底30上为例进行说明，在此基础上，第一衬底30上还可设置栅绝缘层、有源层，栅极501、栅绝缘层、有源层、源极503和漏极504构成TFT。
此处，以第一区域01对应金属靶材拼接区，第二区域02对应金属靶材中心区为例，如图8A所示，可将在第一区域01中与隔垫物70对应的第一衬底30上的膜层厚度总和记为Da，可将在第二区域02中与隔垫物70对应的第一衬底30上的膜层厚度总和记为Db。由于对应第一区域01，栅金属层和源漏金属层的厚度较薄，而对应第二区域02，栅金属层和源漏金属层的厚度较厚，因此，可使对应第一区域01的黑矩阵厚度为D1，对应第二区域02的黑矩阵厚度，相对第一区域01的黑矩阵厚度进行适量减薄，其厚度记为D2，使D1-D2＝Db-Da，可使显示面板的盒厚均为GapA的水平，从而实现显示面板盒厚的均匀性。
需要说明的是，辅助图案508与源极503和漏极504可通过同一次构图工艺形成。
由于隔垫物的材料为具有一定弹性的树脂材料，且辅助图案508在第一 衬底30上的正投影的面积小于隔垫物70在第一衬底30上的正投影的面积，使隔垫物70可以卡在辅助图案508上，从而减少隔垫物70与第一衬底30上膜层之间的相对运动，避免支撑不稳定，以及由摩擦带来的静电对液晶显示面板的影响。
本公开实施例提供一种显示面板的制备方法，如图3所示，显示面板包括对盒的第一衬底30和第二衬底40；在第一衬底30和第二衬底40之间有形成金属层50、黑矩阵60和隔垫物层070，隔垫物层070包括多个隔垫物70。例如，金属层50通过磁控溅射工艺和构图工艺形成。隔垫物70、黑矩阵60和金属层50中，任意两者在第一衬底30上的正投影至少存在部分重叠；在任意隔垫物70对应位置处，沿垂直第一衬底30的方向，隔垫物70、金属层50与黑矩阵60的厚度和均相等。
本公开实施例提供一种显示面板的制作方法，通过在第一衬底30和第二衬底40之间制备黑矩阵60、隔垫物70和金属层50，并使在任意隔垫物70对应的位置处，黑矩阵60、隔垫物70和金属层50的厚度和相等，可使显示面板的盒厚均匀，从而可以提高显示面板的画面质量。
例如，如图3所示，隔垫物70的厚度均相同；在任意隔垫物70对应位置处，通过控制形成黑矩阵60的厚度，使金属层03与黑矩阵60的厚度和均相等。
例如，通过控制隔垫物70的厚度不变，而控制黑矩阵60的厚度变化，以使任意隔垫物70对应的位置处，黑矩阵60和金属层50的厚度和相同。例如，相对同时控制隔垫物70和黑矩阵60的厚度，来使任意隔垫物70对应的位置处，隔垫物70、黑矩阵60和金属层50的厚度和相同。例如，由于隔垫物70的厚度不变，仅需控制黑矩阵60的厚度变化，因而可简化工艺。
进一步例如，对应显示面板的第一区域和第二区域，金属层50的厚度不相同；例如，第一区域和第二区域交替排布。
在此基础上，形成黑矩阵60；包括：如图4A和图4B所示，采用涂覆工艺形成黑矩阵薄膜601。例如，通过控制涂覆设备的工作电压来控制黑矩阵材料的吐出量，使对应第一区域01和第二区域02的黑矩阵薄膜601的厚度不相同；采用掩模板对黑矩阵薄膜601进行曝光，显影后形成黑矩阵。
例如，第一区域01和第二区域02与金属靶材拼接区和金属靶材中心区 对应。
例如，当第一区域01对应金属靶材拼接区时，通过增大涂覆设备的工作电压来控制黑矩阵材料的涂覆量增多，使对应第一区域01的黑矩阵薄膜601的厚度变厚。当第二区域02对应金属靶材中心区时，通过减小涂覆设备的工作电压来控制黑矩阵材料的涂覆量减少，使对应第二区域02的黑矩阵薄膜601的厚度变薄。在采用涂覆工艺制备黑矩阵薄膜时，通过控制涂覆设备的工作电压来控制黑矩阵材料的吐出量，使对应第一区域和第二区域的黑矩阵薄膜的厚度不同，此过程无需进行掩模板(Mask)设计变更，便可形成厚度按区域变化的黑矩阵60，因而可降低成本。
例如，形成黑矩阵60，也可通过形成厚度一致的黑矩阵薄膜，采用灰阶掩模板对黑矩阵薄膜曝光，显影，形成厚度按区域变化的黑矩阵60。此外，也可通过喷墨打印工艺形成黑矩阵。
例如，如图3和图5所示，金属层50在第一衬底30上形成；黑矩阵60和隔垫物70均在第二衬底40上形成。
例如，隔垫物70可形成在黑矩阵60远离第二衬底40的一侧。
本公开一实施例中，分别将金属层50与黑矩阵60和隔垫物70位于不同的衬底上，此设计的制作工艺成熟，无需对制造工艺做出较大调整，避免生产成本的提高。
例如，如图5所示，第二衬底40上还可形成彩色滤光层。彩色滤光层包括第一基色滤光图案81、第二基色滤光图案82和第三基色滤光图案83三种基色的滤光图案。
例如，可先在第二衬底40上形成黑矩阵60；之后分别形成第一基色滤光图案81、第二基色滤光图案82和第三基色滤光图案83。例如，第一基色滤光图案81、第二基色滤光图案82和第三基色滤光图案83分别形成在每个像素的三个子像素中，相邻子像素中的滤光图案通过黑矩阵60隔开。之后，形成隔垫物70。例如，隔垫物70与黑矩阵60在第二衬底40上的正投影重合。
例如，如图6A和图6B所示，金属层50包括栅金属层，栅金属层包括栅极501和栅线502。例如，隔垫物70与栅线502在第一衬底30上的正投影至少存在部分重叠。通过使隔垫物70与栅线502在第一衬底30上的正投 影至少部分重叠，在使隔垫物70用于支撑盒厚的情况下，还可以避免对有效显示区域的影响。
或者，可选的，如图7和图6B所示，金属层50包括栅金属层和源漏金属层，栅金属层包括栅极501和栅线502，源漏金属层包括源极503、漏极504和数据线505。显示面板中上还可形成有栅绝缘层506和有源层507，栅极501、栅绝缘层506、有源层507、源极503和漏极504构成TFT。例如，隔垫物70与TFT在第一衬底30上的正投影至少存在部分重叠。通过使隔垫物70与TFT在第一衬底30上的正投影至少部分重叠，在使隔垫物70用于支撑盒厚的情况下，还可以避免对有效显示区域的影响。
例如，如图8A和图8B所示，金属层50包括栅金属层和源漏金属层，栅金属层包括栅极501和栅线502，源漏金属层包括源极503、漏极504、数据线505和辅助图案508。例如，辅助图案508与栅线502对应；隔垫物70与辅助图案508在第一衬底30上的正投影至少存在部分重叠。
例如，辅助图案508与源极503和漏极504通过同一次构图工艺形成。
由于隔垫物的材料为具有一定弹性的树脂材料，且辅助图案508在第一衬底30上的正投影的面积小于隔垫物70在第一衬底30上的正投影的面积，可使隔垫物70卡在辅助图案508上，从而减少隔垫物70与第一衬底30上膜层之间的相对运动，避免支撑不稳定、以及由摩擦带来的静电对液晶显示面板的影响。
以上以液晶显示面板为例进行说明，但本公开的实施例不限于此，例如还可以应用于发光二极管显示面板等其他显示面板。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (16)

  1. 一种显示面板，包括对盒设置的第一衬底和第二衬底；其中，
    所述第一衬底和所述第二衬底之间设置有金属层、黑矩阵和隔垫物层，所述隔垫物层包括多个隔垫物；
    所述隔垫物、所述黑矩阵和所述金属层中，每两个在所述第一衬底上的正投影至少存在部分重叠；在各所述隔垫物对应位置处，沿垂直所述第一衬底的方向，所述隔垫物、所述金属层与所述黑矩阵的厚度和均相等。
  2. 根据权利要求1所述的显示面板，其中，所述多个隔垫物的厚度均相同；
    在各所述隔垫物对应位置处，所述金属层与所述黑矩阵的厚度和均相等。
  3. 根据权利要求2所述的显示面板，其中，所述显示面板包括多个第一区域和多个第二区域，所述金属层在所述第一区域和所述第二区域的厚度不相同；其中，所述多个第一区域和所述多个第二区域交替排布；
    所述黑矩阵在所述第一区域和所述第二区域的厚度不相同。
  4. 根据权利要求1所述的显示面板，其中，所述金属层设置在所述第一衬底上；
    所述黑矩阵和所述隔垫物设置在所述第二衬底上。
  5. 根据权利要求1-4任一项所述的显示面板，其中，所述金属层包括栅金属层，所述栅金属层包括栅线；
    所述隔垫物与所述栅线在所述第一衬底上的正投影至少存在部分重叠。
  6. 根据权利要求1-4任一项所述的显示面板，其中，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅极和栅线，所述源漏金属层包括源极、漏极和数据线；
    所述显示面板上还设置有栅绝缘层和有源层，所述栅极、所述栅绝缘层、所述有源层、所述源极和所述漏极构成TFT；
    所述隔垫物与所述TFT在所述第一衬底上的正投影至少存在部分重叠。
  7. 根据权利要求1-4任一项所述的显示面板，其中，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅线，所述源漏金属层包括辅助图案；所述辅助图案与所述栅线对应；
    所述隔垫物与所述辅助图案在所述第一衬底上的正投影至少存在部分重叠。
  8. 根据权利要求7所述的显示面板，其中，所述辅助图案在所述第一衬底上的正投影的面积小于所述隔垫物在所述第一衬底上的正投影的面积，所述隔垫物卡在所述辅助图案上。
  9. 一种显示面板的制备方法，所述显示面板包括对盒的第一衬底和第二衬底；其中，在第一衬底和第二衬底之间形成有金属层、黑矩阵和隔垫物层，所述隔垫物层包括多个隔垫物；其中，所述金属层通过磁控溅射工艺和构图工艺形成；
    所述隔垫物层、所述黑矩阵和所述金属层中，每两个在所述第一衬底上的正投影至少存在部分重叠；在各所述隔垫物对应位置处，沿垂直所述第一衬底的方向，所述隔垫物、所述金属层与所述黑矩阵的厚度和均相等。
  10. 根据权利要求9所述的制备方法，其中，所述隔垫物的厚度均相同；
    在各所述隔垫物对应位置处，通过控制形成所述黑矩阵的厚度，使所述金属层与所述黑矩阵的厚度和均相等。
  11. 根据权利要求10所述的制备方法，其中，所述显示面板包括多个第一区域和多个第二区域，所述金属层在所述第一区域和所述第二区域的厚度不相同；其中，所述多个第一区域和所述多个第二区域交替排布；
    形成所述黑矩阵包括：
    采用涂覆工艺形成黑矩阵薄膜；其中，通过控制涂覆设备的工作电压来控制黑矩阵材料的吐出量，使所述黑矩阵薄膜在所述第一区域和所述第二区域的厚度不相同；
    采用掩模板对所述黑矩阵薄膜进行曝光，显影后形成所述黑矩阵。
  12. 根据权利要求9所述的制备方法，其中，所述金属层在所述第一衬底上形成；
    所述黑矩阵和所述隔垫物均在所述第二衬底上形成。
  13. 根据权利要求9-12任一项所述的制备方法，其中，所述金属层包括栅金属层，所述栅金属层包括栅线；
    所述隔垫物与所述栅线在所述第一衬底上的正投影至少存在部分重叠。
  14. 根据权利要求9-12任一项所述的制备方法，其中，所述金属层包括 栅金属层和源漏金属层，所述栅金属层包括栅极和栅线，所述源漏金属层包括源极、漏极和数据线；
    所述显示面板中还形成有栅绝缘层和有源层，所述栅极、所述栅绝缘层、所述有源层、所述源极和所述漏极构成TFT；
    所述隔垫物与所述TFT在所述第一衬底上的正投影至少存在部分重叠。
  15. 根据权利要求9-12任一项所述的制备方法，其中，所述金属层包括栅金属层和源漏金属层，所述栅金属层包括栅线，所述源漏金属层包括辅助图案；所述辅助图案与所述栅线对应；
    所述隔垫物与所述辅助图案在所述第一衬底上的正投影至少存在部分重叠。
  16. 根据权利要求15所述的制备方法，其中，所述辅助图案在所述第一衬底上的正投影的面积小于所述隔垫物在所述第一衬底上的正投影的面积，所述隔垫物卡在所述辅助图案上。
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