WO2018126704A1 - 一种显示面板及其制备方法和显示装置 - Google Patents

一种显示面板及其制备方法和显示装置 Download PDF

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Publication number
WO2018126704A1
WO2018126704A1 PCT/CN2017/098621 CN2017098621W WO2018126704A1 WO 2018126704 A1 WO2018126704 A1 WO 2018126704A1 CN 2017098621 W CN2017098621 W CN 2017098621W WO 2018126704 A1 WO2018126704 A1 WO 2018126704A1
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Prior art keywords
substrate
pillow
spacer
display panel
height
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PCT/CN2017/098621
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English (en)
French (fr)
Inventor
李鹏
汪弋
张杨
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to US15/758,878 priority Critical patent/US20180341140A1/en
Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2018126704A1 publication Critical patent/WO2018126704A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

Definitions

  • Embodiments of the present disclosure relate to the field of display technologies, and in particular, to a display panel, a method of fabricating the same, and a display device.
  • the liquid crystal display mainly includes components such as a color filter substrate, an array substrate, a liquid crystal layer, and a polarizer.
  • the liquid crystal layer is formed of liquid crystal disposed between the color filter substrate and the array substrate.
  • the thickness of the liquid crystal layer in the liquid crystal display has a large influence on the transmittance of light. When the thickness of the liquid crystal layer is not uniform, light transmitted through the liquid crystal layer may cause uneven display. Therefore, in order to ensure uniform display of the liquid crystal display, it is very important to ensure a uniform cell thickness (Cell Gap).
  • Embodiments of the present disclosure provide a display panel, a method of fabricating the same, and a display device.
  • the display panel can improve the uniformity of the thickness of the case, reduce the probability of occurrence of display failure, and further improve the picture quality and display effect of the display panel.
  • a display panel in a first aspect of an embodiment of the present disclosure, includes: a first substrate; a second substrate disposed opposite the first substrate; and a first substrate and the second substrate between the first substrate and the second substrate a plurality of pillow spacers, wherein the pillow spacer comprises a pillow having a first varying height on a side of the first substrate facing the second substrate and on the second substrate a spacer facing one side of the first substrate, the spacer having a change in height depending on the first change
  • the second varying height is such that each of the pillow spacers has a constant height.
  • the first substrate is an array substrate
  • the second substrate is a color film substrate
  • the pillow includes a gate layer disposed on a side surface of the first substrate toward the second substrate.
  • the pillow further includes a gate insulating layer, an active layer, a source/drain electrode layer, and a protective layer sequentially disposed on the gate layer.
  • the material of the spacer comprises a high molecular polymer.
  • the display panel further includes a liquid crystal located in a space formed by the pillow spacer, the first substrate, and the second substrate.
  • a display device in a second aspect of an embodiment of the present disclosure, includes the display panel described in the first aspect of the embodiment of the present disclosure.
  • a method of preparing a display panel includes: providing a first substrate and a second substrate; forming a pillow having a first varying height on a side of the first substrate facing the second substrate; facing the first substrate at the second substrate One side of a substrate forms a spacer corresponding to the pillow, the spacer having a second variation height that varies depending on the first change in height, so that the pillow and the corresponding The total height of the spacer is constant; and the first substrate and the second substrate are bonded to each of the pillows to form a pillow spacer with each of the pillows and the corresponding spacer.
  • forming a spacer corresponding to the pillow on a side of the second substrate facing the first substrate includes: forming a photoresist layer on the second substrate; and using The gray scale mask patterns the photoresist layer, wherein an amount of light transmitted by the light transmissive region of the gray scale mask corresponds to the first varying height.
  • a method of forming a photoresist layer includes a pigment dispersion method or an inkjet method.
  • the method further includes: before the pair of boxes, on a side of the first substrate facing the second substrate or on a side of the second substrate facing the first substrate Forming a liquid crystal on one side, or introducing liquid crystal between the first substrate and the second substrate after the pair of boxes, so that the liquid crystal is located on the pillow spacer, the first substrate And said The space formed by the second substrate.
  • a height-constant display panel of a pillow spacer which enables a constant spacing between the first substrate and the second substrate, thereby providing a cushion spacer, first The thickness of the liquid crystal in the space formed by the substrate and the second substrate is constant.
  • FIG. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • FIG. 4 is a flowchart of a method for preparing a display panel according to an embodiment of the present disclosure.
  • the metal film layer of the array substrate is formed by magnetron sputtering (Magnetron Sputtering).
  • the targets used in the magnetron sputtering process are spliced strip targets.
  • the metal film in the center of the target is thicker, and the metal film at the position of the target is thinner. Therefore, a thin periodic distribution of the metal film will be formed in the vertical direction of the target.
  • a Pillow spacer is disposed between the array substrate and the color filter substrate.
  • the pillow spacer includes a spacer and a pillow comprising a metal film layer of the array substrate. Since the thickness of the metal film layer of the array substrate is periodically distributed, the thickness of the pillow is periodically distributed. After the pair of array substrate and color film substrate, a periodic distribution of the thickness of the cell will be formed. That is to say, the thickness of the center position of the target is too large, and the thickness of the target splicing position is small. This causes the light transmittance of the liquid crystal display at the center of the target to be greater than The light transmittance at the splicing position of the target causes a display failure.
  • Embodiments of the present disclosure provide a display panel, a method of fabricating the same, and a display device.
  • the display panel can improve the uniformity of the thickness of the case, reduce the probability of occurrence of display failure, and further improve the picture quality and display effect of the display panel.
  • FIG. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • the display panel 1 includes: a first substrate 10; a second substrate 20 disposed opposite to the first substrate 10; and a first substrate 10 and a first substrate 10 and a second substrate 20 a plurality of pillow spacers 40 of the second substrate 20, wherein the pillow spacers 40 include a pillow 41 having a first variation height on a side of the first substrate 10 facing the second substrate 20 and a second substrate 20 is directed toward the spacer 42 on the side of the first substrate 10, the spacer 42 having a second varying height that varies depending on the first varying height change, so that each pillow spacer 40 has a constant height.
  • the display panel 1 may further include a liquid crystal 30 located in a space formed by the pillow spacer 40, the first substrate 10, and the second substrate 20.
  • the first substrate 10 is an array substrate
  • the second substrate 20 is a color film substrate.
  • a plurality of pillow spacers 40 are distributed between the first substrate 10 and the second substrate 20, and each of the pillow spacers 40 supports the first substrate 10 and the second substrate 20 And the height of each of the pillow spacers 40 is equal.
  • the second varying height of the spacer 42 in each of the pillow spacers 40 is related to the height of the first variation of the pillow 41 and varies with the height of the first variation of the pillow 41, thereby making the pillow
  • the total height of 41 and spacer 42 is constant.
  • the spacing between the first substrate 10 and the second substrate 20 is constant, so that the thickness of the liquid crystal 30 introduced (eg, poured) between the first substrate 10 and the second substrate 20 is also constant.
  • the uniformity of the cell thickness is improved so that the light transmittance of the entire display panel 1 is uniform.
  • the probability of occurrence of display failure is reduced, the influence on the display effect is further reduced, and the picture quality and display effect are improved.
  • FIG. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • the pillow 41 includes a gate layer 411 disposed on a surface of the first substrate 10 facing the second substrate 20. By This causes the spacer 42 to be supported between the second substrate 20 and the gate layer 411.
  • the pillow 41 may further include a gate insulating layer 412, an active layer 413, a source/drain electrode layer, and a protective layer 416 which are sequentially disposed on the gate layer 411.
  • the source-drain electrode layer may include a source electrode layer 414 and a drain electrode layer 415 disposed between the gate insulating layer 412 and the protective layer 416.
  • the pillow 41 is formed of the gate layer 411, the gate insulating layer 412, the active layer 413, the source electrode layer 414 and the drain electrode layer 415, and the protective layer 416, thereby making the spacer 42 and the pillow 41
  • the protective layer 416 is in contact.
  • the material of the spacer 42 may be a high molecular polymer.
  • FIG. 3 is a schematic structural diagram of a display device according to an embodiment of the present disclosure. As shown in FIG. 3, the display device 2 includes a display panel 1.
  • the display device 2 may be a thin film transistor-liquid crystal display (TFT-LCD).
  • TFT-LCD thin film transistor-liquid crystal display
  • a method of preparing a display panel which is capable of producing a display panel having a uniform thickness, thereby improving the display effect of the display panel.
  • FIG. 4 is a flowchart of a method for preparing a display panel according to an embodiment of the present disclosure.
  • step S401 the first substrate 10 and the second substrate 20 are provided.
  • step S402 a pillow is formed. Specifically, a pillow 41 having a first varying height is formed on a side of the first substrate 10 facing the second substrate 20.
  • step S403 a spacer is formed. Specifically, a spacer 42 corresponding to the pillow 41 is formed on a side of the second substrate 20 facing the first substrate 10.
  • the spacer 42 has a second varying height that varies depending on the first varying height change so that the overall height of the pillow 41 and the corresponding spacer 42 is constant.
  • step S404 the box first substrate 10 and the second substrate 20 are joined to each of the pillows 41 and the corresponding spacers 42 to form a pillow spacer 40.
  • the above method of preparing the display panel 1 further includes: forming a liquid crystal 30 on a side of the first substrate 10 facing the second substrate 20 or a side of the second substrate 20 facing the first substrate 10 before the box is placed, or After the cartridge is bonded, the liquid crystal 30 is introduced between the first substrate 10 and the second substrate 20 so that the liquid crystal 30 is positioned in the space formed by the pillow spacer 40, the first substrate 10, and the second substrate 20.
  • the second varying height of the spacers 42 causes the height of the second variation of the spacers 42 to vary with the height of the first change of the corresponding pillow 41 such that each pillow 41 and corresponding The total height of the spacers 42 is constant, thereby making the spacing between the first substrate 10 and the second substrate 20 constant.
  • the thickness of the liquid crystal 30 can be kept uniform, and the uniformity of the thickness of the case can be ensured, thereby reducing the probability of display failure of the display panel 1, and further improving the picture quality and display effect of the display panel.
  • a first transparent electrode layer 417 and a second transparent electrode layer 418 are further formed on a side of the first substrate 10 facing the second substrate 20.
  • Each of the first transparent electrode layer 417 and the second transparent electrode layer 418 may be formed of indium tin oxide (ITO), but is not limited to the above materials.
  • forming a spacer corresponding to the pillow 41 on a side of the second substrate 20 toward the first substrate 10 includes: forming a photoresist layer on the second substrate 20; and using a gray scale mask The photoresist layer is patterned to form a spacer 42 having a second varying height relative to the first varying height of the pillow 41. Further, the amount of light transmitted by the light transmitting region of the gray scale mask corresponds to the first varying height of the pillow 41.
  • the height of the spacer 42 can be controlled by controlling the amount of light transmitted through the mask, thereby including the pillow 41 and
  • the height of the pillow spacer 40 of the spacer 42 is constant to ensure uniformity of the thickness of the case.
  • a method of forming a photoresist layer includes a pigment dispersion method or an inkjet method.
  • the step of forming the pillow 41 may include forming a gate layer 411 on a side of the first substrate 10 facing the second substrate 20.
  • the pillow 41 may include a gate layer 411.
  • the step of forming the pillow 41 may further include sequentially forming a gate insulating layer 412, an active layer 413, a source/drain electrode layer, and a protective layer on the surface of the gate layer 411 and the first substrate 10 facing the second substrate 20. 416.
  • the source/drain electrode layer may include a source electrode layer 414 and a drain electrode layer 415 disposed between the gate insulating layer 412 and the protective layer 416.

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  • Physics & Mathematics (AREA)
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Abstract

一种显示面板（1）及其制备方法和显示装置。显示面板（1）包括第一基板（10）；与第一基板（10）相对设置的第二基板（20）；以及位于第一基板（10）和第二基板（20）之间并支撑第一基板（10）和第二基板（20）的多个枕垫隔垫物（40），其中，枕垫隔垫物（40）包括位于第一基板（10）朝向第二基板（20）一侧的具有第一变化的高度的枕垫（41）以及位于第二基板（20）朝向第一基板一侧的隔垫物（42），隔垫物（42）具有依赖于第一变化的高度变化而变化的第二变化的高度，以便每个枕垫隔垫物（40）具有恒定的高度。

Description

一种显示面板及其制备方法和显示装置
本申请要求于2017年1月3日递交的中国专利申请第201710002573.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及显示技术领域，特别涉及一种显示面板及其制备方法和显示装置。
背景技术
液晶显示器(LCD)因具有节省空间、发热少、功耗低、无辐射等优点，而受到广大用户的青睐。液晶显示器主要包括彩膜基板、阵列基板、液晶层以及偏光片等部件。液晶层由设置在彩膜基板和阵列基板之间的液晶形成。液晶显示器中液晶层的厚度对光的透过率影响较大。当液晶层的厚度不均匀时，透过液晶层的光会导致显示不均的现象。因此，为了保证液晶显示器的均一显示，保证均匀的盒厚(Cell Gap)非常重要。
发明内容
本公开的实施例提供了一种显示面板及其制备方法和显示装置。该显示面板能够提高盒厚的均一性，减少产生显示不良的概率，进而能够提高显示面板的画面质量和显示效果。
在本公开的实施例的第一方面中，提供一种显示面板。该显示面板包括：第一基板；与所述第一基板相对设置的第二基板；以及位于所述第一基板和所述第二基板之间并支撑所述第一基板和所述第二基板的多个枕垫隔垫物，其中，所述枕垫隔垫物包括位于所述第一基板朝向所述第二基板一侧的具有第一变化的高度的枕垫以及位于所述第二基板朝向所述第一基板一侧的隔垫物，所述隔垫物具有依赖于所述第一变化的高度变化而变化 的第二变化的高度，以便每个所述枕垫隔垫物具有恒定的高度。
在本公开的实施例中，所述第一基板为阵列基板，所述第二基板为彩膜基板。
在本公开的实施例中，所述枕垫包括设置于所述第一基板朝向所述第二基板一侧表面的栅极层。
在本公开的实施例中，所述枕垫还包括依次设置于所述栅极层上的栅极绝缘层、有源层、源漏电极层以及保护层。
在本公开的实施例中，所述隔垫物的材料包括高分子聚合物。
在本公开的实施例中，所述显示面板还包括位于所述枕垫隔垫物、所述第一基板和所述第二基板形成的空间中的液晶。
在本公开的实施例的第二方面中，提供了一种显示装置。该显示装置包括在本公开的实施例的第一方面中描述的显示面板。
在本公开的实施例的第三方面中，提供了一种制备显示面板的方法。所述方法包括：提供第一基板和第二基板；在所述第一基板朝向所述第二基板的一侧形成具有第一变化的高度的枕垫；在所述第二基板朝向所述第一基板的一侧形成与所述枕垫对应的隔垫物，所述隔垫物具有依赖于所述第一变化的高度变化而变化的第二变化的高度，以便所述枕垫和对应的所述隔垫物的总高度恒定；以及对盒所述第一基板和所述第二基板，以接合每个枕垫与对应的隔垫物形成枕垫隔垫物。
在本公开的实施例中，在所述第二基板朝向所述第一基板的一侧形成与所述枕垫对应的隔垫物包括：在所述第二基板上形成光阻层；以及使用灰阶掩模图案化所述光阻层，其中，所述灰阶掩模的透光区域的透光量对应于所述第一变化的高度。
在本公开的实施例中，形成光阻层的方法包括颜料分散法或喷墨法。
在本公开的实施例中，所述方法还包括：在所述对盒之前，在所述第一基板朝向所述第二基板的一侧或在所述第二基板朝向所述第一基板的一侧形成液晶，或者在所述对盒之后，将液晶引入到所述第一基板和所述第二基板之间，以便使所述液晶位于所述枕垫隔垫物、所述第一基板和所述 第二基板形成的空间中。
在本公开的实施例中，提供了一种枕垫隔垫物的高度恒定的显示面板，能够使第一基板和第二基板之间的间距恒定，从而使位于枕垫隔垫物、第一基板和第二基板形成的空间中的液晶的厚度恒定。
附图说明
图1为本公开实施例提供的显示面板的截面示意图；
图2为本公开实施例提供的显示面板的截面示意图；
图3为本公开实施例提供的显示装置的结构示意图；以及
图4为本公开实施例提供的制备显示面板的方法的流程图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
在制作液晶显示器的阵列基板的过程中，阵列基板的金属膜层通过磁控溅射(Magnetron Sputtering)形成。目前，磁控溅射过程中使用的靶材均为拼接而成的条状靶材。靶材中心位置和拼接位置的成膜质量和成膜速度存在差异。并且靶材中心的金属膜较厚，靶材拼接位置的金属膜较薄。因此，在靶材垂直方向上将形成金属膜薄厚的周期分布。
为了保持盒厚的稳定性和均一性，在阵列基板和彩膜基板之间设置枕垫(Pillow)隔垫物(Post Spacer，PS)。该枕垫隔垫物包括隔垫物和包括阵列基板的金属膜层的枕垫。由于阵列基板的金属膜层的厚度成周期性分布，因此，枕垫的厚度呈周期性分布。在对盒阵列基板和彩膜基板后将导致形成盒厚的周期性分布。也就是说，靶材中心位置的厚度偏大，靶材拼接位置的厚度偏小。这使得液晶显示器在靶材中心位置的光线透过率大于 靶材拼接位置的光线透过率，由此产生显示不良的现象。
本公开实施例提供了一种显示面板及其制备方法和显示装置。该显示面板能够提高盒厚的均一性，减少产生显示不良的概率，进而能够提高显示面板的画面质量和显示效果。
现将参照附图更全面地描述示例性的实施例。
图1为本公开实施例提供的显示面板的截面示意图。如图1所示，显示面板1包括：第一基板10；与第一基板10相对设置的第二基板20；以及位于第一基板10和第二基板20之间并支撑第一基板10和第二基板20的多个枕垫隔垫物40，其中，枕垫隔垫物40包括位于第一基板10朝向第二基板20一侧的具有第一变化的高度的枕垫41以及位于第二基板20朝向第一基板10一侧的隔垫物42，隔垫物42具有依赖于第一变化的高度变化而变化的第二变化的高度，以便每个枕垫隔垫物40具有恒定的高度。
另外，在本公开的实施例中，显示面板1还可以包括位于枕垫隔垫物40、第一基板10和第二基板20形成的空间中的液晶30。
在本公开的实施例中，第一基板10为阵列基板，第二基板20为彩膜基板。
在本公开的实施例中，在第一基板10和第二基板20之间分布有多个枕垫隔垫物40，每个枕垫隔垫物40均支撑第一基板10和第二基板20，并且每个枕垫隔垫物40的高度均相等。每个枕垫隔垫物40中隔垫物42的第二变化的高度与枕垫41的第一变化的高度相关，并随枕垫41的第一变化的高度变化而变化，从而使枕垫41与隔垫物42的总高度恒定。换言之，第一基板10与第二基板20之间的间距恒定，从而使引入(例如，灌注)到第一基板10与第二基板20之间的液晶30的厚度也恒定。由此，提高了盒厚的均一性，以便使整个显示面板1的光线透过率一致。从而减少了产生显示不良的概率，进一步减小了对显示效果的影响，提高了画面质量和显示效果。
图2为本公开实施例提供的显示面板的截面示意图。如图2所示，枕垫41包括设置于第一基板10朝向第二基板20一侧表面的栅极层411。由 此使隔垫物42支撑于第二基板20与栅极层411之间。
更进一步地，如图2所示，枕垫41还可以包括依次设置于栅极层411上的栅极绝缘层412、有源层413、源漏电极层以及保护层416。在图2中，源漏电极层可以包括设置于栅极绝缘层412和保护层416之间的源电极层414和漏电极层415。此时，枕垫41由栅极层411、栅极绝缘层412、有源层413、源电极层414和漏电极层415以及保护层416形成，从而使隔垫物42与枕垫41中的保护层416接触。
在本公开的实施例中，隔垫物42的材料可以为高分子聚合物。
本公开实施例还提供了一种显示装置。图3为本公开实施例提供的显示装置的结构示意图。如图3所示，显示装置2包括显示面板1。
在本公开的实施例中，显示装置2可以为薄膜晶体管液晶显示器(thin film transistor-liquid crystal display，TFT-LCD)。
在本公开的实施例中，提供了一种制备显示面板的方法，能够制备出盒厚均一的显示面板，从而提升显示面板的显示效果。
图4为本公开实施例提供的制备显示面板的方法的流程图。如图4所示，在步骤S401中，提供第一基板10和第二基板20。在步骤S402中，形成枕垫。具体地，在第一基板10朝向第二基板20的一侧形成具有第一变化的高度的枕垫41。在步骤S403中，形成隔垫物。具体地，在第二基板20朝向第一基板10的一侧形成与枕垫41对应的隔垫物42。隔垫物42具有依赖于第一变化的高度变化而变化的第二变化的高度，以便枕垫41和对应的隔垫物42的总高度恒定。在步骤S404中，对盒第一基板10和第二基板20，以接合每个枕垫41与对应的隔垫物42形成枕垫隔垫物40。
此外，上述制备显示面板1的方法还包括：在对盒之前，在第一基板10朝向第二基板20的一侧或在第二基板20朝向第一基板10的一侧形成液晶30，或者在对盒之后，将液晶30引入到第一基板10和第二基板20之间，以便使液晶30位于枕垫隔垫物40、第一基板10和第二基板20形成的空间中。
在采用上述制备方法制备显示面板1时，通过在第二基板20上控制形 成的隔垫物42的第二变化的高度，使隔垫物42的第二变化的高度随对应的枕垫41的第一变化的高度变化而变化，以使每个枕垫41和对应的隔垫物42的总高度恒定，从而使第一基板10和第二基板20之间的间距恒定。由此，液晶30的厚度能够保持一致，保证盒厚的均一性，从而减少显示面板1产生显示不良的概率，进而能够提高显示面板的画面质量和显示效果。
在采用上述制备方法制备的显示面板1中，如图2所示，在第一基板10朝向第二基板20的一侧还形成有第一透明电极层417和第二透明电极层418。第一透明电极层417和第二透明电极层418均可以由氧化铟锡(ITO)形成，但并不限于上述材料。
在本公开的实施例中，在第二基板20朝向第一基板10的一侧形成与枕垫41对应的隔垫物包括：在第二基板20上形成光阻层；以及使用灰阶掩模图案化光阻层，以形成具有相对于枕垫41的第一变化的高度的具有第二变化的高度的隔垫物42。此外，灰阶掩模的透光区域的透光量对应于枕垫41的第一变化的高度。也就是说，在通过灰阶掩模图案化光阻层而形成隔垫物42的过程中，可通过控制掩模的透光量来控制隔垫物42的高度，从而使包括枕垫41和隔垫物42的枕垫隔垫物40的高度恒定，以保证盒厚的一致性。
在本公开的实施例中，形成光阻层的方法包括颜料分散法或喷墨法。
在本公开的实施例中，如图2所示，形成枕垫41的步骤可以包括在第一基板10朝向第二基板20的一侧形成栅极层411。枕垫41可以包括栅极层411。此外，形成枕垫41的步骤还可以包括在栅极层411和第一基板10朝向第二基板20一侧表面上依次形成栅极绝缘层412、有源层413、源漏电极层以及保护层416。源漏电极层可以包括设置于栅极绝缘层412和保护层416之间的源电极层414和漏电极层415。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (11)

  1. 一种显示面板，包括：
    第一基板；
    与所述第一基板相对设置的第二基板；以及
    位于所述第一基板和所述第二基板之间并支撑所述第一基板和所述第二基板的多个枕垫隔垫物，其中，所述枕垫隔垫物包括位于所述第一基板朝向所述第二基板一侧的具有第一变化的高度的枕垫以及位于所述第二基板朝向所述第一基板一侧的隔垫物，所述隔垫物具有依赖于所述第一变化的高度变化而变化的第二变化的高度，以便每个所述枕垫隔垫物具有恒定的高度。
  2. 根据权利要求1所述的显示面板，其中，所述第一基板为阵列基板，所述第二基板为彩膜基板。
  3. 根据权利要求2所述的显示面板，其中，所述枕垫包括设置于所述第一基板朝向所述第二基板一侧表面的栅极层。
  4. 根据权利要求3所述的显示面板，其中，所述枕垫还包括依次设置于所述栅极层上的栅极绝缘层、有源层、源漏电极层以及保护层。
  5. 根据权利要求1-4中任一项所述的显示面板，其中，所述隔垫物的材料包括高分子聚合物。
  6. 根据权利要求1所述的显示面板，还包括位于所述枕垫隔垫物、所述第一基板和所述第二基板形成的空间中的液晶。
  7. 一种包括权利要求1-6中任一项所述的显示面板的显示装置。
  8. 一种制备显示面板的方法，包括：
    提供第一基板和第二基板；
    在所述第一基板朝向所述第二基板的一侧形成具有第一变化的高度的枕垫；
    在所述第二基板朝向所述第一基板的一侧形成与所述枕垫对应的隔垫物，所述隔垫物具有依赖于所述第一变化的高度变化而变化的第二变化的高度，以便所述枕垫和对应的所述隔垫物的总高度恒定；以及
    对盒所述第一基板和所述第二基板，以接合每个枕垫与对应的隔垫物形成枕垫隔垫物。
  9. 根据权利要求8所述的方法，其中，在所述第二基板朝向所述第一基板的一侧形成与所述枕垫对应的隔垫物包括：在所述第二基板上形成光阻层；以及使用灰阶掩模图案化所述光阻层，其中，所述灰阶掩模的透光区域的透光量对应于所述第一变化的高度。
  10. 根据权利要求9所述的方法，其中，形成光阻层的方法包括颜料分散法或喷墨法。
  11. 根据权利要求8所述的方法，还包括：在所述对盒之前，在所述第一基板朝向所述第二基板的一侧或在所述第二基板朝向所述第一基板的一侧形成液晶，或者在所述对盒之后，将液晶引入到所述第一基板和所述第二基板之间，以便使所述液晶位于所述枕垫隔垫物、所述第一基板和所述第二基板形成的空间中。
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