WO2018066653A1 - 複合基板及び複合基板の製造方法 - Google Patents
複合基板及び複合基板の製造方法 Download PDFInfo
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- WO2018066653A1 WO2018066653A1 PCT/JP2017/036310 JP2017036310W WO2018066653A1 WO 2018066653 A1 WO2018066653 A1 WO 2018066653A1 JP 2017036310 W JP2017036310 W JP 2017036310W WO 2018066653 A1 WO2018066653 A1 WO 2018066653A1
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- 239000002131 composite material Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000005468 ion implantation Methods 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims description 50
- 150000002500 ions Chemical class 0.000 claims description 46
- 239000000203 mixture Substances 0.000 claims description 38
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 29
- 230000003746 surface roughness Effects 0.000 claims description 28
- 229910052594 sapphire Inorganic materials 0.000 claims description 27
- 239000010980 sapphire Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 20
- -1 hydrogen ions Chemical class 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical group [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims 2
- 229910001947 lithium oxide Inorganic materials 0.000 claims 2
- 238000005304 joining Methods 0.000 abstract description 3
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000003841 Raman measurement Methods 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
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- HXGWMCJZLNWEBC-UHFFFAOYSA-K lithium citrate tetrahydrate Chemical compound [Li+].[Li+].[Li+].O.O.O.O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HXGWMCJZLNWEBC-UHFFFAOYSA-K 0.000 description 1
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Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Definitions
- the present invention relates to a composite substrate including a piezoelectric layer made of lithium tantalate or the like and a support substrate, and a method for manufacturing the composite substrate.
- a surface acoustic wave (SAW) device in which a comb-shaped electrode (IDT) for exciting a surface acoustic wave is formed on a piezoelectric substrate is used as a frequency adjustment / selection component in a cellular phone or the like.
- SAW surface acoustic wave
- the surface acoustic wave device is required to have a small size, a small insertion loss, and a performance that does not allow unnecessary waves to pass.
- Piezoelectric materials such as lithium tantalate (LiTaO 3 ; LT) and lithium niobate (LiNbO 3 ; LN) are used. ing.
- the frequency band interval in transmission and reception is narrow and the bandwidth is wide.
- the piezoelectric material used for the surface acoustic wave device needs to have a sufficiently small characteristic variation due to temperature.
- the shoulder characteristics of the filter and duplexer need to be extremely steep so that extra noise does not protrude between the bands, and a high Q value is required.
- Patent Document 1 discloses that on a support substrate, a high acoustic velocity film having a higher bulk acoustic wave velocity than an acoustic acoustic velocity propagating through a piezoelectric membrane, and a bulk acoustic velocity propagating from a bulk acoustic velocity propagating through a piezoelectric membrane.
- a composite substrate in which a low-velocity low-velocity film and a piezoelectric film are sequentially laminated is disclosed, and an elastic wave device using this composite substrate has been shown to increase the Q value.
- Patent Document 1 discloses that a piezoelectric film is formed by ion implantation as a method of manufacturing this composite substrate.
- Non-Patent Document 1 discloses a method of separating a lithium tantalate substrate into two after bonding a lithium tantalate substrate implanted with H + ions to a support substrate via a SiN film or a SiO 2 film. ing.
- Li ions in the LiTaO 3 substrate are implanted by ions such as implanted H +. It was revealed that variation in the amount of Li occurred in the formed LiTaO 3 layer because a part of the was ejected. Such a variation in the amount of Li becomes a significant problem in the manufacture of a surface acoustic wave device because it manifests as a characteristic variation such as the acoustic velocity of the surface acoustic wave and the electromechanical coupling coefficient.
- the amount of Li in the LiTaO 3 layer is reduced, the performance of LiTaO 3 as a piezoelectric material is lowered.
- the amount of Li decreases to 48.5 mol. % Or less.
- an object of the present invention is to provide a composite substrate including a piezoelectric layer and a support substrate with less variation in the amount of Li, and a method for manufacturing the composite substrate.
- the present inventors have found that variation in the amount of Li in the piezoelectric layer can be suppressed by applying Li diffusion to the piezoelectric layer, resulting in the present invention. Is.
- the present invention is a method of manufacturing a composite substrate including a piezoelectric layer and a support substrate, the step of implanting ions into the piezoelectric substrate, and the step of bonding the piezoelectric substrate and the support substrate. And a step of separating the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate in the ion implantation portion of the piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate. And a step of diffusing Li into the piezoelectric layer after the step.
- the method may include a step of raising the temperature of the piezoelectric substrate to the Curie temperature or higher and lowering the temperature to the Curie temperature or lower with an electric field applied.
- a step of raising the temperature of the piezoelectric substrate and restoring the piezoelectricity can be included.
- the step of bonding the piezoelectric substrate and the support substrate is preferably performed by a surface activated room temperature bonding method, and an intervening layer may be provided between the piezoelectric layer and the support substrate.
- the piezoelectric layer has a pseudo stoichiometric composition
- the ion species in the step of ion implantation into the piezoelectric substrate are hydrogen ions, hydrogen molecules It is preferably at least one ion selected from ions and helium ions.
- the piezoelectric substrate of the present invention preferably has a range in which the Li concentration varies across the thickness direction, and is preferably lithium tantalate or lithium niobate.
- the support substrate preferably contains at least one material selected from silicon, sapphire, silicon carbide, and spinel.
- the present invention is a method of manufacturing a composite substrate including a piezoelectric layer and a support substrate, the step of implanting ions into the piezoelectric substrate, the step of bonding the piezoelectric substrate and the support substrate, And after the step of bonding the piezoelectric substrate and the support substrate, the step of separating the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate at the ion implantation portion of the piezoelectric substrate,
- the substrate is lithium tantalate, and has a location where the Li concentration is 48.5 ⁇ 0.5% and a location where the Li concentration is 50.0 ⁇ 0.5%.
- the side has a range in which the Li concentration becomes higher.
- the present invention is a method of manufacturing a composite substrate including a piezoelectric layer and a support substrate, the step of implanting ions into the piezoelectric substrate, the step of bonding the piezoelectric substrate and the support substrate, And after the step of bonding the piezoelectric substrate and the support substrate, the step of separating the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate at the ion implantation portion of the piezoelectric substrate,
- the substrate is lithium tantalate or lithium niobate, and the Li concentration at a depth position where ions are implanted into the piezoelectric substrate is more than 50.0%.
- the present invention is a method of manufacturing a composite substrate including a piezoelectric layer and a support substrate, the step of implanting ions into the piezoelectric substrate, the step of bonding the piezoelectric substrate and the support substrate, And after the step of bonding the piezoelectric substrate and the support substrate, the step of separating the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate at the ion implantation portion of the piezoelectric substrate,
- the substrate is lithium tantalate, and has a location where the Li concentration is 48.5 ⁇ 0.5% and a location where the Li concentration is 50.0 ⁇ 0.5%.
- the side has a range in which the Li concentration is higher, and the Li concentration at a depth position where ions are implanted into the piezoelectric substrate is more than 50.0%.
- the Li concentration from the surface of the piezoelectric substrate on the side bonded to the support substrate to the depth position where ions are implanted is preferably 49.0% or more and 52.5% or less. Moreover, it is preferable to provide an intervening layer between the piezoelectric layer and the support substrate.
- the present invention is a composite substrate including a piezoelectric layer and a support substrate, wherein the piezoelectric layer is lithium tantalate or lithium niobate, and the Li concentration on the surface of the piezoelectric layer is 49.9.
- the thickness of the piezoelectric layer is 1.0 ⁇ m or less, and the maximum surface roughness Rz value of the piezoelectric layer is 10% or less of the thickness of the piezoelectric layer. Is.
- an intervening layer exists between the piezoelectric layer and the support substrate.
- the present invention it is possible to manufacture a composite substrate in which the amount of Li in the piezoelectric layer is small. Moreover, if the composite substrate manufactured by this invention is used, the surface acoustic wave device of the outstanding characteristic can be manufactured stably. Furthermore, according to the present invention, a composite substrate having a LiTaO 3 layer having a stoichiometric composition, a thin piezoelectric layer, and excellent thickness uniformity can be manufactured.
- FIG. 6 is an input impedance waveform of a SAW resonator using the composite substrate of Example 1.
- 3 is a graph showing a Q value of a SAW resonator using the composite substrate of Example 1.
- FIG. 14 is a graph showing a profile in the depth direction of the Li amount of the LT substrate of Example 3. It is a figure which shows an example of the creation flow of the composite substrate of this application. 10 is a graph showing a profile in the depth direction of the Li amount of the LT substrate of Example 5.
- the present invention is a method for manufacturing a composite substrate including a piezoelectric layer and a support substrate.
- the material used for the piezoelectric layer and the support substrate is not particularly limited, but the piezoelectric material is preferably lithium tantalate or lithium niobate containing Li in the composition, and single crystals thereof can be used.
- the piezoelectric material is a lithium tantalate single crystal
- the crystal orientation is preferably a rotation of 36 ° to 49 ° Y cut.
- the support substrate material can be selected from silicon, sapphire, silicon carbide, spinel, etc., and may be a laminated substrate including these.
- the present invention includes a step of implanting ions into the piezoelectric substrate.
- ions are implanted to an arbitrary depth of the piezoelectric substrate, and in the subsequent piezoelectric substrate separation step, the ions are separated in this ion implantation portion. Therefore, the depth of ion implantation in this step determines the thickness of the piezoelectric layer after separation of the piezoelectric substrate. For this reason, it is preferable that the ion implantation depth is equal to the thickness of the piezoelectric layer of the target composite substrate, or slightly increased in consideration of the polishing allowance and the like. The depth of ion implantation differs depending on the material, ion species, etc., but can be adjusted by the ion acceleration voltage.
- the ion species used in the ion implantation step is not particularly limited as long as it disturbs the crystallinity of the piezoelectric substrate material, but is preferably a light element such as hydrogen ion, hydrogen molecular ion, or helium ion. If these ion species are used, ions can be implanted with a small acceleration voltage, and there are advantages such as few restrictions on the apparatus, small damage to the piezoelectric substrate, and good distribution in the depth direction.
- the dose is preferably 1 ⁇ 10 16 to 1 ⁇ 10 18 atm / cm 2
- the ion species is hydrogen molecular ions.
- the dose is preferably 1 ⁇ 10 16 to 2 ⁇ 10 18 atm / cm 2
- the ion species is helium ion
- the dose is preferably 2 ⁇ 10 16 to 2 ⁇ 10 18 atm / cm 2 .
- the present invention also includes a step of bonding the piezoelectric substrate and the support substrate.
- the bonding method in this step is not particularly limited, and may be bonded via an adhesive or the like, or a direct bonding method such as a diffusion bonding method, a room temperature bonding method, a plasma activated bonding method, or a surface activated room temperature bonding method. Can be used.
- an intervening layer may be provided between the piezoelectric substrate and the support substrate.
- a piezoelectric substrate such as a lithium tantalate single crystal substrate or a lithium niobate single crystal substrate and a support substrate such as silicon or sapphire have a large difference in thermal expansion coefficient.
- the room temperature bonding method also has the aspect that the bonding system is limited. In some cases, heat treatment is required to recover the crystallinity of the piezoelectric layer.
- the surface activation treatment method in the surface activation bonding method is not particularly limited, and ozone water treatment, UV ozone treatment, ion beam treatment, plasma treatment, and the like can be used.
- the separation method is not particularly limited.
- the separation can be performed by heating to a temperature of 200 ° C. or lower and applying mechanical stress due to wedge or the like to one end of the ion implantation portion.
- the surface of the piezoelectric layer bonded to the support substrate can be polished to adjust the surface roughness and thickness.
- the surface roughness and thickness of the piezoelectric layer may be arbitrarily set as necessary, but the surface roughness is preferably an RMS value of 0.4 nm or less and a thickness of about 0.5 to 5 ⁇ m. Further, the remaining piezoelectric substrate can be reused as a piezoelectric substrate by re-polishing.
- the thickness of the piezoelectric layer can be controlled to 1.0 ⁇ m or less, and the surface roughness can be controlled to 10% or less of the thickness with the maximum height Rz value.
- the thickness is controlled to 0.8 ⁇ m or less, and the surface roughness is controlled to a maximum height Rz value of 5% or less of the thickness.
- the present invention includes a step of diffusing Li into the piezoelectric layer bonded to the support substrate after the separation step.
- a step of diffusing Li into the piezoelectric layer bonded to the support substrate after the separation step.
- Li deficiency in the piezoelectric layer generated in the ion implantation step can be compensated.
- the method for diffusing Li into the piezoelectric layer is not particularly limited, and Li can be diffused by bringing the Li diffusion source into contact with the piezoelectric layer. At this time, the state of the Li diffusion source may be solid, liquid, or gas.
- Li can be diffused into the piezoelectric layer by embedding and heating a piezoelectric layer bonded to a support substrate in a powder mainly composed of Li 3 TaO 4 .
- Li can also be diffused into the piezoelectric layer by impregnating the piezoelectric layer bonded to the support substrate into a melt obtained by mixing LiNO 3 , NaNO 3 , and KNO 3 in an equimolar ratio.
- the piezoelectric layer has a pseudo stoichiometric composition.
- characteristics such as the electromechanical coupling coefficient, temperature characteristics, and Q value can be improved as compared with the case where the piezoelectric layer has a normal congruent melting (congruent) composition.
- the pseudo stoichiometric composition is determined on the basis of technical common sense according to the piezoelectric material.
- the piezoelectric material is LiTaO 3
- ⁇ is in the range of ⁇ 1.0 ⁇ ⁇ 2.5.
- the piezoelectric material is LiNbO 3
- ⁇ is in the range of ⁇ 1.0 ⁇ ⁇ 2.5.
- the Li concentration of the lithium tantalate single crystal substrate and the lithium niobate single crystal substrate may be measured by a known method, but can be evaluated by, for example, Raman spectroscopy.
- a lithium tantalate single crystal substrate it is known that there is an approximately linear relationship between the half-value width of the Raman shift peak and the Li concentration (the value of Li / (Li + Ta)). Therefore, by using an expression representing such a relationship, the composition at an arbitrary position of the oxide single crystal substrate can be evaluated.
- the relational expression between the half-width of the Raman shift peak and the Li concentration is obtained by measuring the Raman half-width of several samples having known compositions and different Li concentrations, but the Raman measurement conditions are the same. If so, a relational expression that has already been clarified in literature may be used.
- the following formula 1 may be used (see 2012 International International Symposium Proceedings, Page (s) 1252-1255).
- FWHM1 is the full width at half maximum of the Raman shift peak near 600 cm ⁇ 1 .
- lithium tantalate single crystal substrate or a lithium niobate single crystal substrate as the piezoelectric substrate, one having a substantially uniform Li concentration over its thickness direction can be used. It can be a pseudo stoichiometric composition.
- a congruent composition piezoelectric single crystal substrate is preferable in that it can be manufactured relatively easily by the Czochralski method or the like.
- the step of diffusing Li into the piezoelectric layer bonded to the support substrate can be performed in a short time.
- a piezoelectric single crystal substrate having a pseudo stoichiometric composition can be obtained by a known double crucible method, but if this substrate is used, the cost becomes high. Therefore, as the lithium tantalate single crystal substrate or the lithium niobate single crystal substrate, one having a range in which the Li concentration differs in the thickness direction can be used. That is, when this substrate is bonded to a supporting substrate to form a composite substrate, a piezoelectric substrate having a pseudo stoichiometric composition at a portion that becomes a piezoelectric layer can be used.
- Such a piezoelectric substrate can be obtained by diffusing Li from the substrate surface into the inside of a piezoelectric single crystal substrate having a congruent composition. At this time, by adjusting the reaction time, reaction temperature, and the like, a piezoelectric substrate having a pseudo stoichiometric composition on the surface and a congruent composition on the inside can be obtained. Moreover, it is preferable that the pseudo stoichiometric composition is at least from the substrate surface to a depth equivalent to the thickness of the target piezoelectric layer.
- the substrate surface side is preferably a substrate having a range in which the Li concentration is higher.
- the Li concentration at the depth position where ions are implanted in the piezoelectric substrate is preferably more than 50.0 mol%. % Or more is more preferable, and 50.1 mol% or more is further more preferable. In this way, even if the Li concentration is decreased by ion implantation, the Li concentration of the piezoelectric layer can be made higher than 49.9 mol%, and excellent characteristics can be obtained.
- the Li concentration at the depth position where ions are implanted in the piezoelectric substrate is preferably 52.5 mol% or less, more preferably 51.0 mol% or less, and preferably 50.5 mol% or less.
- the Li concentration from the surface of the piezoelectric substrate on the side to be bonded to the support substrate to the depth position where ions are implanted is preferably 49.0 mol% or more and 52.5 mol% or less. More preferably, it is 49.5 mol% or more, More preferably, it is more than 50.0 mol%, More preferably, it is 50.1 mol% or more.
- the Li concentration of the piezoelectric substrate correlates with a decrease in Li concentration due to ion implantation. That is, the amount of decrease in Li concentration when ions are implanted into a piezoelectric substrate having a pseudo stoichiometric composition is smaller than the amount of decrease in Li concentration when ions are implanted into a piezoelectric substrate having a congruent composition. That is, in the case of a piezoelectric substrate having a congruent composition, a decrease of about 0.4 mol% is observed, but in the case of a piezoelectric substrate having a pseudo stoichiometric composition, the decrease is about 0.1 mol% and there is little variation.
- the piezoelectricity is increased. There may be no step of diffusing Li into the piezoelectric layer after the separation step of the body substrate.
- the piezoelectricity of the portion through which the ions have passed may be impaired. Exhibits piezoelectricity without performing recovery treatment.
- the Li concentration on the surface of the piezoelectric layer, which was impossible in the past, is over 49.9 mol%
- the thickness of the piezoelectric layer is 1.0 ⁇ m or less
- the piezoelectric layer A composite substrate in which the maximum height Rz value of the surface roughness of the body layer is 10% or less of the thickness of the piezoelectric layer can be produced.
- the Li concentration on the surface of the piezoelectric layer is preferably 49.95 mol% or more, and preferably 52.0 mol% or less.
- the thickness of the piezoelectric layer is preferably 0.8 ⁇ m or less, and more preferably 0.6 ⁇ m or less.
- the maximum height Rz value of the surface roughness of the piezoelectric layer is preferably 5% or less, more preferably 1% or less of the thickness of the piezoelectric layer.
- the maximum height Rz is a parameter defined in JIS B 0601: 2013 (ISO 4287: 1997), and can be measured based on these standards.
- an intervening layer may be provided between the piezoelectric layer of the composite substrate and the support substrate.
- the material of the intervening layer is not particularly limited, but is preferably an inorganic material, for example, SiO 2, SiO 2 ⁇ 0.5 , SiO 2 doped with Ti, a-Si, p- Si, a-SiC, Al 2 O 3 or the like may be included as a main component.
- the intervening layer may be a stack of layers made of a plurality of materials.
- the piezoelectricity of the portion through which the ions have passed may be impaired. Therefore, it is preferable to perform a step of raising the temperature of the piezoelectric substrate to the Curie temperature or higher and lowering the temperature to the Curie temperature or lower with an electric field applied after joining the piezoelectric substrate and the support substrate. By doing so, the piezoelectricity of the piezoelectric layer can be recovered. Further, this step may be performed simultaneously with the step of diffusing Li in the piezoelectric layer.
- the piezoelectricity can be recovered by raising the temperature of the piezoelectric substrate.
- the temperature at this time is preferably not higher than the Curie temperature and about 500 to 700 ° C.
- a sapphire substrate having a thickness of 500 ⁇ m and a one-side mirror surface was prepared as a support substrate. And it confirmed that the surface roughness in the mirror surface of LT board
- the LT substrate and the sapphire substrate subjected to ion implantation are “Takagi H. et al,“ Room-temperament wafer bonding, using argon beam activation ”From Proceedings-Electrochemical Semiconductor (35) and Applications V), 265-274. "
- the cleaned LT substrate and sapphire substrate were set in a high-vacuum chamber, and the substrate surface to be bonded was irradiated with a neutral argon high-speed atomic beam for activation treatment. Thereafter, the LT substrate and the sapphire substrate were bonded together.
- the bonded substrate was heated to 110 ° C., and wedges were driven into one end of the ion implantation portion of the piezoelectric substrate to separate the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate.
- the thickness of the piezoelectric layer was 900 nm, but the surface of the piezoelectric layer was polished by 200 nm to make the thickness of the piezoelectric layer 700 nm. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm.
- This bonded substrate composed of the piezoelectric layer and the sapphire support substrate is induced by applying vertical vibration in the thickness direction to the main surface and the back surface using a piezo d33 / d15 meter (model ZJ-3BN) manufactured by the Institute of Chinese Academy of Sciences.
- a piezo d33 / d15 meter model ZJ-3BN manufactured by the Institute of Chinese Academy of Sciences.
- the temperature of this bonded substrate was raised to 650 ° C., which is higher than the Curie temperature of lithium tantalate, and gradually lowered to room temperature with an electric field of 4000 V / m applied in the + Z direction of the LT substrate. .
- the amount of Li on the surface of the piezoelectric layer varied from 47.9 to 48.2 mol%.
- the amount of Li was similarly calculated for the surface of the LT substrate before ion implantation, and the amount of Li at that time was uniform at 48.3 mol%. Therefore, in this LT substrate, the amount of Li is reduced by a maximum of 0.4 mol% by ion implantation.
- the bonded substrate was washed to complete a composite substrate composed of the LT piezoelectric layer and the sapphire support substrate. Subsequently, the composite substrate thus prepared was subjected to Raman spectroscopic measurement in the same manner as described above, and as a result of calculating the amount of Li on the surface of the piezoelectric layer, the amount of Li was uniform at 48.3 mol% in all the measurement locations. .
- an Al film having a thickness of 0.4 ⁇ m was formed on the surface of the piezoelectric layer of the composite substrate by sputtering. Subsequently, a resist was applied, and the electrode pattern of the resonator was exposed and developed using a stepper. Further, an electrode of the SAW device was formed by RIE (Reactive Ion Etching). Here, one wavelength of the resonator is 5 ⁇ m.
- FIG. 1 also shows an input impedance waveform for a resonator (Comparative Example 1) using a composite substrate manufactured in the same manner as in Example 1 except that Li diffusion treatment is not performed.
- FIG. 2 shows the Q values of the resonators of Example 1 and Comparative Example 1.
- the Q value was obtained by the following formula 2 (refer to 2010 IEEE International Ultrasonics Symposium Proceedings, Page (s) 861 to 863).
- ⁇ is an angular frequency
- ⁇ (f) is a group delay time
- ⁇ is a reflection coefficient measured by a network analyzer.
- Table 1 shows the electromechanical coupling coefficient (K 2 ) of the resonator of Example 1, the maximum Q value, and the frequency temperature coefficient of the resonance frequency and antiresonance frequency in the temperature range of 20 ° C. to 85 ° C. TCF) values are shown respectively.
- the electromechanical coupling coefficient (K 2 ) was obtained by the following Equation 3.
- K 2 ( ⁇ fr / 2fa) / tan ( ⁇ fr / 2fa) fr: resonance frequency fa: anti-resonance frequency
- Table 1 also shows values of the resonance load Qso and anti-resonance load Qpo calculated by the following formula 4 using the MBVD model (John D. et al., “Modified Butterworth-Van Dyke Circuit for FBAR Resonators and Automata. "Measurement System", IEEE ULTRASONICS SYMPOSIUM, 2000, pp. 863-868).
- Example 2 ion implantation was performed on the LT substrate by the same method as in Example 1 to join the LT substrate and the sapphire substrate. Further, the LT substrate was separated at the ion implantation portion, and the surface of the piezoelectric layer was polished to obtain a bonded substrate composed of the LT piezoelectric layer and the sapphire support substrate.
- the bonding substrate was embedded in a powder mainly composed of Li 3 TaO 4 spread in a small container.
- this small container was set in an electric furnace, and the inside of the furnace was made an N 2 atmosphere and heated at 750 ° C. for 100 hours. Subsequently, an electric field of 4000 V / m was applied in the approximate + Z-axis direction of the LT substrate between 750 ° C. and 500 ° C. in the temperature lowering process, and then the temperature was gradually decreased to room temperature.
- the surface of the piezoelectric layer was polished by about 10 nm to complete a composite substrate composed of the LT piezoelectric layer and the sapphire support substrate. There were no cracks or cracks in this composite substrate. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm.
- AFM atomic force microscope
- Example 1 laser Raman spectroscopic measurement was performed at several locations on the surface of the piezoelectric layer, and the amount of Li was calculated. As a result, the amount of Li was 50.2 mol% at all the measurement locations, and was uniform. It was a pseudo stoichiometric composition.
- Example 2 For the composite substrate of Example 2, an electrode was formed in the same manner as in Example 1 to produce a resonator, and the results of performing the same evaluation as in Example 1 on this SAW resonator are shown in Table 1 below. .
- both surfaces of the LT substrate were polished to finish a quasi-mirror surface having a surface roughness Ra value of 0.01 ⁇ m.
- the LT substrate was embedded in a powder mainly composed of Li 3 TaO 4 spread in a small container.
- this small container was set in an electric furnace, and the inside of the furnace was made an N 2 atmosphere and heated at 975 ° C. for 24 hours to diffuse Li into the LT substrate. After this treatment, one surface of the LT substrate was mirror polished.
- the full width at half maximum (FWHM1) of the Raman shift peak in the vicinity of 600 cm ⁇ 1 from the surface to the depth direction was measured using the same laser Raman spectroscopic measurement apparatus as in Example 1.
- FWHM1 full width at half maximum
- a sapphire substrate having a thickness of 500 ⁇ m and a mirror surface on one side was prepared as a support substrate. And it confirmed that the surface roughness in the mirror surface of LT board
- the LT substrate and the sapphire substrate subjected to ion implantation were bonded using the surface activated room temperature bonding method in the same manner as in Example 1. Further, in the same manner as in Example 1, the LT substrate was separated at the ion implantation portion, and the surface of the piezoelectric layer was polished to obtain a bonded substrate composed of the LT piezoelectric layer and the sapphire support substrate.
- the thickness of the piezoelectric layer was 900 nm, but the surface of the piezoelectric layer was polished by 200 nm to make the thickness of the piezoelectric layer 700 nm.
- the bonding substrate was embedded in a powder mainly composed of Li 3 TaO 4 spread in a small container.
- the surface of the piezoelectric layer was polished by about 10 nm to complete a composite substrate composed of the LT piezoelectric layer and the sapphire support substrate. There were no cracks or cracks in this composite substrate. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm.
- AFM atomic force microscope
- the voltage waveform induced by applying vertical vibration in the thickness direction to the main surface and the back surface was observed in the same manner as in Example 1. The response could be observed and the piezoelectricity could be confirmed.
- Example 1 laser Raman spectroscopic measurement was performed at several locations on the surface of the piezoelectric layer, and the amount of Li was calculated. As a result, the amount of Li was 50.2 mol% at all the measurement locations, and was uniform. It was a pseudo stoichiometric composition.
- Example 3 For the composite substrate of Example 3, an electrode was formed in the same manner as in Example 1 to produce a resonator, and this SAW resonator was evaluated in the same manner as in Example 1. Almost the same result was obtained.
- Example 4 an LT substrate subjected to Li diffusion treatment was prepared by the same method as in Example 3.
- the profile of the LT substrate in the depth direction of the Li amount is substantially the same as that of Example 3 shown in FIG.
- a SiO 2 film having a thickness of 5 ⁇ m was deposited on the mirror surface side of the LT substrate on which ion implantation was performed by using a room temperature CVD method.
- the LT / SiO 2 substrate was degassed by heating at 350 ° C. for 48 hours, and then the SiO 2 film was polished to a thickness of 2.7 ⁇ m.
- a Si (SiO 2 / Si) substrate having a mirror surface on one side and an oxide (SiO 2 ) film formed on the surface was prepared as a support substrate.
- the support substrate had a thickness of 400 ⁇ m, and the oxide film had a thickness of 0.3 ⁇ m.
- an a-Si film having a thickness of 50 nm was formed on the mirror surface side of the SiO 2 / Si substrate by using a room temperature CVD method. Then, it was confirmed that the surface roughness of the LT / SiO 2 substrate and the a-Si / SiO 2 / Si substrate specular is 1.0nm or less in RMS value.
- these substrates were bonded by a surface activation room temperature bonding method using plasma activation treatment. Further, the LT substrate was separated at the ion implantation portion by the same method as in Example 1, and the surface of the piezoelectric layer was polished to obtain a bonded substrate composed of the LT piezoelectric layer and the Si support substrate.
- the thickness of the piezoelectric layer at this time was 900 nm, but the surface of the piezoelectric layer was polished by 200 nm to make the thickness of the piezoelectric layer 700 nm.
- an intervening layer exists between the LT piezoelectric layer and the Si support substrate, and the intervening layer has a laminated structure of SiO 2 / a-Si / SiO 2 .
- the bonding substrate was embedded in a powder mainly composed of Li 3 TaO 4 spread in a small container.
- the surface of the piezoelectric layer was polished by about 10 nm to complete a composite substrate composed of the LT piezoelectric layer and the Si support substrate. There were no cracks or cracks in this composite substrate. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm.
- AFM atomic force microscope
- the voltage waveform induced by applying vertical vibration in the thickness direction to the main surface and the back surface was observed in the same manner as in Example 1. The response could be observed and the piezoelectricity could be confirmed.
- Example 1 laser Raman spectroscopic measurement was performed at several locations on the surface of the piezoelectric layer, and the amount of Li was calculated. As a result, the amount of Li was 50.2 mol% at all the measurement locations, and was uniform. The pseudo stoichiometric composition.
- Example 4 For the composite substrate of Example 4, electrodes were formed in the same manner as in Example 1 to produce a resonator, and the results of evaluation similar to Example 1 for this SAW resonator are shown in Table 1 below. Show.
- both surfaces of the LT substrate were polished to finish a quasi-mirror surface having a surface roughness Ra value of 0.01 ⁇ m.
- the LT substrate was embedded in a powder mainly composed of Li 3 TaO 4 spread in a small container.
- this small container was set in an electric furnace, and the inside of the furnace was set to N 2 atmosphere and heated at 990 ° C. for 50 hours to diffuse Li into the LT substrate. After this treatment, one surface of the LT substrate was mirror polished.
- the full width at half maximum (FWHM1) of the Raman shift peak in the vicinity of 600 cm ⁇ 1 from the surface to the depth direction was measured using the same laser Raman spectroscopic measurement apparatus as in Example 1.
- the amount of Li was calculated from the measured half-width using the above formula 1, the profile of the depth of Li amount shown in FIG. 5 was obtained.
- a sapphire substrate having a thickness of 500 ⁇ m and a mirror surface on one side was prepared as a support substrate. And it confirmed that the surface roughness in the mirror surface of LT board
- the dose was 9 ⁇ 10 16 atm / cm 2 and the acceleration voltage was 160 KeV.
- the position where ions are implanted is a position at a depth of 900 nm from the surface, and the Li amount at that position is 50.1 mol%.
- the LT substrate and the sapphire substrate subjected to ion implantation were bonded using the surface activated room temperature bonding method in the same manner as in Example 1. Further, in the same manner as in Example 1, the LT substrate was separated at the ion implantation portion, and the surface of the piezoelectric layer was polished to obtain a bonded substrate composed of the LT piezoelectric layer and the sapphire support substrate.
- the thickness of the piezoelectric layer was 900 nm, but the surface of the piezoelectric layer was polished by 200 nm to make the thickness of the piezoelectric layer 700 nm. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm. There were no cracks or cracks in this composite substrate.
- AFM atomic force microscope
- the voltage waveform induced by applying vertical vibration in the thickness direction to the main surface and the back surface was observed in the same manner as in Example 1. The response could be observed and the piezoelectricity could be confirmed.
- Example 1 laser Raman spectroscopic measurement was performed at several locations on the surface of the piezoelectric layer, and the amount of Li was calculated. As a result, the amount of Li was 50.0 mol% at all the measurement locations, and was uniform. It was a pseudo stoichiometric composition. In this LT substrate, the amount of Li is reduced by a maximum of 0.1 mol% by ion implantation.
- Example 5 For the composite substrate of Example 5, an electrode was formed in the same manner as in Example 1 to produce a resonator, and this SAW resonator was evaluated in the same manner as in Example 1. Almost the same result was obtained.
- the lithium tantalate substrate was cut out.
- the surface roughness of the cut LT substrate was adjusted to 0.15 ⁇ m in terms of arithmetic average roughness Ra by the lapping process, and the thickness of the LT substrate was 250 ⁇ m.
- both surfaces of the LT substrate were polished to finish a quasi-mirror surface having a surface roughness Ra value of 0.01 ⁇ m.
- the LT substrate was embedded in a powder mainly composed of Li 3 TaO 4 spread in a small container.
- this small container was set in an electric furnace, and the inside of the furnace was set to N 2 atmosphere and heated at 990 ° C. for 50 hours to diffuse Li into the LT substrate.
- the dose was 9 ⁇ 10 16 atm / cm 2 and the acceleration voltage was 160 KeV.
- the position where ions are implanted is a position at a depth of 900 nm from the surface, and the Li amount at that position is 50.1 mol%.
- the SiO 2 at 35 ° C. using a plasma CVD method to ion-implanted side of the surface of the LT substrate was allowed to 10 ⁇ m approximately deposited were subjected to mirror polishing to the surface depositing the SiO 2.
- a Si (SiO 2 / Si) substrate having a thickness of 500 ⁇ m and having a one-side mirror thermal oxide film was prepared as a support substrate. Then, it was confirmed that the surface roughness of the SiO 2 / LT substrate and the SiO 2 / Si substrate specular is 1.0nm or less in RMS value.
- the SiO 2 / LT substrate and the SiO 2 / Si substrate were bonded together using the surface activated room temperature bonding method as in Example 1. Further, the LT substrate was separated at the ion implantation portion by the same method as in Example 1, and the surface of the piezoelectric layer was polished to obtain a bonded substrate composed of the LT piezoelectric layer and the Si support substrate. In this bonded substrate, there is an SiO 2 layer as an intervening layer between the piezoelectric layer and the support substrate.
- the thickness of the piezoelectric layer was 900 nm, but the surface of the piezoelectric layer was polished by 200 nm to make the thickness of the piezoelectric layer 700 nm. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm. There were no cracks or cracks in this composite substrate.
- AFM atomic force microscope
- the voltage waveform induced by applying vertical vibration in the thickness direction to the main surface and the back surface was observed in the same manner as in Example 1. The response could be observed and the piezoelectricity could be confirmed.
- Example 1 laser Raman spectroscopic measurement was performed at several locations on the surface of the piezoelectric layer, and the amount of Li was calculated. As a result, the amount of Li was 50.0 mol% at all the measurement locations, and was uniform. It was a pseudo stoichiometric composition. In this LT substrate, the amount of Li is reduced by a maximum of 0.1 mol% by ion implantation.
- Example 6 For the composite substrate of Example 6, electrodes were formed in the same manner as in Example 1 to produce a resonator, and this SAW resonator was evaluated in the same manner as in Example 1. Almost the same result was obtained.
- This LT substrate is made of a single crystal obtained by the double crucible method, and the whole has a pseudo stoichiometric composition. One side of this LT substrate was mirror-polished.
- a sapphire substrate having a thickness of 500 ⁇ m and a mirror surface on one side was prepared as a support substrate. And it confirmed that the surface roughness in the mirror surface of LT board
- the dose was 9 ⁇ 10 16 atm / cm 2 and the acceleration voltage was 160 KeV.
- the position where ions are implanted is a position at a depth of 900 nm from the surface, and the Li amount at that position is 49.95 mol%.
- the LT substrate and the sapphire substrate subjected to ion implantation were bonded using the surface activated room temperature bonding method in the same manner as in Example 1. Further, in the same manner as in Example 1, the LT substrate was separated at the ion implantation portion, and the surface of the piezoelectric layer was polished to obtain a bonded substrate composed of the LT piezoelectric layer and the sapphire support substrate.
- the thickness of the piezoelectric layer was 900 nm, but the surface of the piezoelectric layer was polished by 200 nm to make the thickness of the piezoelectric layer 700 nm. Moreover, when the maximum height Rz of the surface roughness was measured using an atomic force microscope (AFM), the value was 1 nm. There were no cracks or cracks in this composite substrate.
- AFM atomic force microscope
- the voltage waveform induced by applying vertical vibration in the thickness direction to the main surface and the back surface was observed in the same manner as in Example 1. The response could be observed and the piezoelectricity could be confirmed.
- Example 2 laser Raman spectroscopic measurement was performed at several locations on the surface of the piezoelectric layer, and the amount of Li was calculated. As a result, the amount of Li was 49.8 mol% in all the measurement locations, and was uniform. It was a pseudo stoichiometric composition. In this LT substrate, the amount of Li is reduced by a maximum of 0.15 mol% by ion implantation.
- Example 2 For the composite substrate of Comparative Example 3, an electrode was formed in the same manner as in Example 1 to produce a resonator, and this SAW resonator was evaluated in the same manner as in Example 1. As a result, Example 2, The result was slightly inferior to 5 and 6.
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Abstract
Description
また、二重ルツボ法などにより作製した定比(ストイキオメトリー)組成(Li/Li+Ta=49.95~50.0mol%)のLiTaO3基板を圧電基板として用いても、Li量は少なくとも0.1%程度減少して、49.9mol%以下となる。
さらに、本発明によれば、ストイキオメトリー組成のLiTaO3層を有し、圧電体層の膜厚が薄く、膜厚均一性に優れた複合基板を製造することができる。
タンタル酸リチウム単結晶基板やニオブ酸リチウム単結晶基板等の圧電基板と、シリコン、サファイア等の支持基板では、熱膨張係数の差が大きく、剥がれや欠陥等の抑制のためには、常温接合法を用いることが好ましいが、常温接合法は接合する系が限定されるという面もある。また、圧電体層の結晶性回復のために、熱処理が必要となる場合もある。
Li/(Li+Ta)=(53.15-0.5FWHM1)/100
圧電体基板のイオン注入される深さ位置のLi濃度は、52.5mol%以下であることが好ましく、51.0mol%以下であることがより好ましく、50.5mol%以下であることが好ましい。
また、圧電体層の厚みは、0.8μm以下であることが好ましく、0.6μm以下であることがより好ましい。圧電体層の表面粗さの最大高さRz値は、圧電体層の厚みの5%以下であることが好ましく、1%以下であることがより好ましい。
なお、最大高さRzは、JIS B 0601:2013(ISO 4287:1997)に定められたパラメータであり、これらの規格に基づいて測定することができる。
実施例1では、まず、単一分極処理を施したコングルエント組成の4インチ径タンタル酸リチウム(Li:Ta=48.3:51.7)単結晶インゴットに、スライス、ラップ、研磨を行って、厚さ250μmで片側鏡面の42°回転Yカットのタンタル酸リチウム基板を作製した。
したがって、このLT基板では、イオン注入によってLi量が最大0.4mol%減少している。
Q(f)=ω*τ(f)*|Γ|/(1-|Γ|2)
K2=(πfr/2fa)/tan(πfr/2fa)
fr:共振周波数
fa:反共振周波数
実施例2では、実施例1と同様の方法で、LT基板にイオン注入を行い、LT基板とサファイア基板を接合した。さらに、イオン注入部においてLT基板を分離し、圧電体層の表面を研磨して、LT圧電体層とサファイア支持基板からなる接合基板を得た。
実施例3では、まず、単一分極処理を施したコングルエント組成の4インチ径タンタル酸リチウム(Li:Ta=48.3:51.7)単結晶インゴットから、厚さ300μmの42°回転Yカットのタンタル酸リチウム基板を切り出した。次に、ラップ工程によって、切り出したLT基板の面粗さが算術平均粗さRa値で0.15μmとなるようにすると共に、LT基板の厚さは250μmとした。
したがって、このLT基板では、イオン注入によってLi量が最大0.2mol%減少している。
実施例4では、実施例3と同様な方法により、Li拡散処理を施したLT基板を準備した。このLT基板のLi量の深さ方向のプロファイルは、図3に示す実施例3とほぼ同様である。
したがって、このLT基板では、イオン注入によってLi量が最大0.2mol%減少している。
実施例5では、まず、単一分極処理を施したコングルエント組成の4インチ径タンタル酸リチウム(Li:Ta=48.3:51.7)単結晶インゴットから、厚さ300μmの42°回転Yカットのタンタル酸リチウム基板を切り出した。次に、ラップ工程によって、切り出したLT基板の面粗さが算術平均粗さRa値で0.15μmとなるようにすると共に、LT基板の厚さは250μmとした。
このLT基板では、イオン注入によってLi量が最大0.1mol%減少している。
実施例6では、まず、単一分極処理を施したコングルエント組成の4インチ径タンタル酸リチウム(Li:Ta=48.3:51.7)単結晶インゴットから、厚さ300μmの42°回転Yカットのタンタル酸リチウム基板を切り出した。次に、ラップ工程によって、切り出したLT基板の面粗さが算術平均粗さRa値で0.15μmとなるようにすると共に、LT基板の厚さは250μmとした。
このLT基板では、イオン注入によってLi量が最大0.1mol%減少している。
比較例3では、まず、単一分極処理を施した疑似ストイキオメトリー組成(Li:Ta=49.95:50.05)のタンタル酸リチウム単結晶基板(4インチ径、厚さ300μm、42°回転Yカット)を準備した。このLT基板は二重ルツボ法により得られた単結晶から成り、全体が疑似ストイキオメトリー組成である。このLT基板の片面に鏡面研磨を施した。
このLT基板では、イオン注入によってLi量が最大0.15mol%減少している。
Claims (17)
- 圧電体層と支持基板とを含んで構成される複合基板の製造方法であって、圧電体基板にイオン注入を行う工程と、圧電体基板と支持基板とを接合する工程と、圧電体基板と支持基板とを接合する工程の後に、圧電体基板のイオン注入部において、支持基板に接合された圧電体層と残りの圧電体基板とに分離する工程と、該分離する工程の後に、圧電体層にLiを拡散させる工程と、を含むことを特徴とする複合基板の製造方法。
- 前記圧電体基板と支持基板とを接合する工程の後に、前記圧電体基板をキュリー温度以上に昇温して、電界を印加した状態でキュリー温度以下に降温する工程を含むことを特徴とする請求項1に記載の複合基板の製造方法。
- 前記圧電体基板と支持基板とを接合する工程の後に、前記圧電体基板を昇温して、圧電性を回復させる工程を含むことを特徴とする請求項1又は2に記載の複合基板の製造方法。
- 前記圧電体層にLiを拡散させる工程において、前記圧電体層を疑似ストイキオメトリー組成とすることを特徴とする請求項1から3の何れかに記載の複合基板の製造方法。
- 前記圧電体基板は、その厚さ方向にわたってLi濃度が異なっている範囲を有することを特徴とする請求項請求項1から4の何れかに記載の複合基板の製造方法。
- 前記圧電体基板は、タンタル酸リチウムまたはニオブ酸リチウムであることを特徴とする請求項1から5の何れかに記載の複合基板の製造方法。
- 前記圧電体層と前記支持基板との間に介在層を設けることを特徴とする請求項1から6の何れかに記載の複合基板の製造方法。
- 前記支持基板は、シリコン、サファイア、炭化ケイ素、スピネルから選ばれる少なくとも1種の材料を含むことを特徴とする請求項1から7の何れかに記載の複合基板の製造方法。
- 前記電体基板と支持基板とを接合する工程は、表面活性化常温接合法によって行うことを特徴とする請求項請求項1から8の何れかに記載の複合基板の製造方法。
- 前記圧電体基板にイオン注入を行う工程において、イオン種は水素イオン、水素分子イオン、ヘリウムイオンから選ばれる少なくとも1種のイオンであることを特徴とする請求項1から9の何れかに記載の複合基板の製造方法。
- 圧電体層と支持基板とを含んで構成される複合基板の製造方法であって、圧電体基板にイオン注入を行う工程と、圧電体基板と支持基板とを接合する工程と、圧電体基板と支持基板とを接合する工程の後に、圧電体基板のイオン注入部において、支持基板に接合された圧電体層と残りの圧電体基板とに分離する工程と、を含み、圧電体基板は、タンタル酸リチウムであり、Li濃度が48.5±0.5%である箇所と、Li濃度が50.0±0.5%である箇所を有し、その厚み方向について、基板表面側の方がLi濃度の高くなる範囲を有することを特徴とする複合基板の製造方法。
- 圧電体層と支持基板とを含んで構成される複合基板の製造方法であって、圧電体基板にイオン注入を行う工程と、圧電体基板と支持基板とを接合する工程と、圧電体基板と支持基板とを接合する工程の後に、圧電体基板のイオン注入部において、支持基板に接合された圧電体層と残りの圧電体基板とに分離する工程と、を含み、圧電体基板は、タンタル酸リチウムまたはニオブ酸リチウムであり、圧電体基板のイオン注入される深さ位置のLi濃度は、50.0%超であることを特徴とする複合基板の製造方法。
- 圧電体層と支持基板とを含んで構成される複合基板の製造方法であって、圧電体基板にイオン注入を行う工程と、圧電体基板と支持基板とを接合する工程と、圧電体基板と支持基板とを接合する工程の後に、圧電体基板のイオン注入部において、支持基板に接合された圧電体層と残りの圧電体基板とに分離する工程と、を含み、圧電体基板は、タンタル酸リチウムであり、Li濃度が48.5±0.5%である箇所と、Li濃度が50.0±0.5%である箇所を有し、その厚み方向について、基板表面側の方がLi濃度の高くなる範囲を有し、圧電体基板のイオン注入される深さ位置のLi濃度は、50.0%超であることを特徴とする複合基板の製造方法。
- 圧電体基板の支持基板と接合する側の表面からイオン注入される深さ位置までのLi濃度は、49.0%以上52.5%以下であることを特徴とする請求項11から13の何れかに記載の複合基板の製造方法。
- 前記圧電体層と前記支持基板との間に介在層を設けることを特徴とする請求項11から14の何れかに記載の複合基板の製造方法。
- 圧電体層と支持基板とを含んで構成される複合基板であって、圧電体層は、タンタル酸リチウムまたはニオブ酸リチウムであり、圧電体層表面のLi濃度は、49.9%超であり、圧電体層の厚みは、1.0μm以下であり、圧電体層の表面粗さの最大高さRz値は、圧電体層の厚みの10%以下であることを特徴とする複合基板。
- 前記圧電体層と前記支持基板との間に介在層が存在することを特徴とする請求項16に記載の複合基板。
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JP2020129762A (ja) * | 2019-02-08 | 2020-08-27 | 信越化学工業株式会社 | 複合基板の製造方法 |
CN111799365A (zh) * | 2020-06-29 | 2020-10-20 | 中国科学院上海微系统与信息技术研究所 | 基于同一衬底制备不同厚度薄膜的方法及其结构、及应用器件 |
WO2021225101A1 (ja) * | 2020-05-08 | 2021-11-11 | 信越化学工業株式会社 | 圧電体複合基板およびその製造方法 |
WO2021250991A1 (ja) * | 2020-06-09 | 2021-12-16 | 信越化学工業株式会社 | Iii族窒化物系エピタキシャル成長用基板とその製造方法 |
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