WO2018066325A1 - 蒸着マスクの製造方法、蒸着マスクが割り付けられた中間製品及び蒸着マスク - Google Patents
蒸着マスクの製造方法、蒸着マスクが割り付けられた中間製品及び蒸着マスク Download PDFInfo
- Publication number
- WO2018066325A1 WO2018066325A1 PCT/JP2017/032923 JP2017032923W WO2018066325A1 WO 2018066325 A1 WO2018066325 A1 WO 2018066325A1 JP 2017032923 W JP2017032923 W JP 2017032923W WO 2018066325 A1 WO2018066325 A1 WO 2018066325A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vapor deposition
- deposition mask
- support portion
- long side
- metal plate
- Prior art date
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 425
- 239000013067 intermediate product Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- 239000000463 material Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 229910000640 Fe alloy Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005019 vapor deposition process Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 210000005069 ears Anatomy 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
- B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Definitions
- the present invention relates to a vapor deposition mask and a method for manufacturing the vapor deposition mask.
- the present invention also relates to an intermediate product for producing a vapor deposition mask.
- display devices used in portable devices such as smartphones and tablet PCs are required to have high definition, for example, a pixel density of 400 ppi or more.
- the pixel density of the display device is required to be, for example, 800 ppi or more.
- organic EL display devices are attracting attention because of their excellent responsiveness, low power consumption, and high contrast.
- a method of forming pixels of an organic EL display device a method of forming pixels with a desired pattern using a vapor deposition mask in which through holes arranged in a desired pattern are formed is known. Specifically, first, a deposition mask is brought into intimate contact with a substrate for an organic EL display device, and then the deposited deposition mask and the substrate are both put into a deposition apparatus to deposit an organic material on the substrate. I do. As a result, a pixel containing an organic material can be formed on the substrate in a pattern corresponding to the pattern of the through hole of the vapor deposition mask.
- the vapor deposition mask is fixed to a frame having a predetermined rigidity.
- the vapor deposition mask has a pair of long sides and a pair of short sides, the vapor deposition mask is fixed to the frame while being pulled in the direction of the long sides. Thereby, it is possible to suppress the evaporation mask from being bent and to improve the dimensional accuracy and position accuracy of the pixels.
- a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate by exposure / development processing, and a second resist pattern is formed on the second surface of the metal plate by exposure / development processing. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first opening in the first surface of the metal plate. Thereafter, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second opening in the second surface of the metal plate. At this time, by performing etching so that the first opening and the second opening communicate with each other, a through-hole penetrating the metal plate can be formed.
- a method for efficiently producing a vapor deposition mask first, a metal plate having an area corresponding to a plurality of vapor deposition masks is prepared, and then a large number of through holes to be formed in the plurality of vapor deposition masks are formed in the metal plate. Then, a method of extracting individual vapor deposition masks from the metal plate is known. For example, in patent document 1, the vapor deposition mask is extracted from the metal plate by cutting the metal plate along the breaking line. In Patent Document 1, the break line is a perforation formed on a metal plate in a pattern corresponding to the long side and the short side of the vapor deposition mask.
- the vapor deposition mask When the perforation is broken, it is considered that the vapor deposition mask is pulled from the metal plate, thereby deforming the metal plate. For example, deformation such as a wavy shape may appear on the long side of the vapor deposition mask. As a result, the dimensional accuracy and position accuracy of the vapor deposition material that adheres to the substrate through the through-hole located in the vicinity of the long side of the vapor deposition mask is reduced.
- An object of the present invention is to provide a method of manufacturing a vapor deposition mask that can effectively solve such problems.
- the present invention is a method of manufacturing a vapor deposition mask including a pair of long sides and a pair of short sides and having a plurality of through holes, the step of preparing a metal plate, and the metal plate being a pair of long sides And a plurality of vapor deposition mask portions including a pair of short sides and having a plurality of through holes, and surrounding the plurality of vapor deposition mask portions and partially connected to the short sides of the plurality of vapor deposition mask portions.
- the long side is a method for manufacturing a vapor deposition mask that is not connected to the support portion.
- the present invention is a method of manufacturing a vapor deposition mask including a pair of long sides and a pair of short sides and having a plurality of through holes, the step of preparing a metal plate, and the metal plate being a pair of long sides And a plurality of vapor deposition mask portions including a pair of short sides and formed with a plurality of through holes, a support portion surrounding the plurality of vapor deposition mask portions and partially connected to the plurality of vapor deposition mask portions, And a separation step of separating the vapor deposition mask portion from the support portion to obtain the vapor deposition mask, and in the intermediate product, of the long sides of the vapor deposition mask portion It is a manufacturing method of a vapor deposition mask whose ratio of the place connected to the said support part is smaller than the ratio of the location connected to the said support part among the said short sides of the said vapor deposition mask part.
- the ratio of the portions connected to the support portion among the long sides of the vapor deposition mask portion is obtained by dividing the total width of the portions connected to the support portion among the long sides by the length of the long side.
- the ratio of the portions connected to the support portion of the short sides of the vapor deposition mask portion is calculated by the sum of the widths of the portions connected to the support portion of the short sides. May be calculated by dividing by the length of.
- the ratio of the portions connected to the support portion among the long sides of the vapor deposition mask portion is obtained by dividing the number of portions connected to the support portion among the long sides by the length of the long side.
- the ratio of the portions connected to the support portion of the short sides of the vapor deposition mask portion is calculated by calculating the number of portions connected to the support portion of the short sides as the length of the short side. You may calculate by dividing by.
- the region that overlaps the through hole when the long side is viewed along the width direction of the intermediate product among the long sides of the vapor deposition mask portion, It is not connected to the support part. More preferably, the entire area of the long side of the vapor deposition mask portion is not connected to the support portion.
- the short side of the vapor deposition mask portion includes a plurality of convex portions protruding toward the support portion and connected to the support portion. Also good.
- the plurality of vapor deposition mask portions are arranged in a direction intersecting the long side, and between the long sides of two adjacent vapor deposition mask portions.
- the support portion may not be present.
- the processing step includes a step of etching the metal plate to form the through hole and a gap between the long side of the vapor deposition mask portion and the support portion. May be included.
- the metal plate may be processed while conveying the metal plate along the long side direction of the vapor deposition mask portion.
- the vapor deposition mask portion is separated from the support portion by breaking a portion of the short side of the vapor deposition mask portion that is connected to the support portion. May be.
- the thickness of the metal plate may be 50 ⁇ m or less.
- the present invention is a metal plate-like intermediate product including a pair of long sides and a pair of short sides and assigned with a vapor deposition mask in which a plurality of through holes are formed.
- a vapor deposition mask portion including a short side and formed with a plurality of through holes; and a support portion surrounding the vapor deposition mask portion and partially connected to the short side of the vapor deposition mask portion.
- the long side of the mask portion is an intermediate product that is not connected to the support portion.
- the present invention is a metal plate-like intermediate product including a pair of long sides and a pair of short sides and assigned with a vapor deposition mask in which a plurality of through holes are formed.
- a vapor deposition mask portion including a short side and having a plurality of through-holes formed thereon; and a support portion that surrounds the vapor deposition mask portion and is partially connected to the vapor deposition mask portion. It is an intermediate product in which the proportion of the long side connected to the support portion is smaller than the proportion of the short side of the vapor deposition mask portion connected to the support portion.
- the ratio of the portions connected to the support portion among the long sides of the vapor deposition mask portion is obtained by dividing the total width of the portions connected to the support portion among the long sides by the length of the long side.
- the ratio of the portions connected to the support portion of the short sides of the vapor deposition mask portion is calculated by the sum of the widths of the portions connected to the support portion of the short sides. May be calculated by dividing by the length of.
- the ratio of the portions connected to the support portion among the long sides of the vapor deposition mask portion is obtained by dividing the number of portions connected to the support portion among the long sides by the length of the long side.
- the ratio of the portions connected to the support portion of the short sides of the vapor deposition mask portion is calculated by calculating the number of portions connected to the support portion of the short sides as the length of the short side. You may calculate by dividing by.
- a region of the long side of the vapor deposition mask portion that overlaps the through hole when the long side is viewed along the width direction of the intermediate product is in the support portion. Not connected. More preferably, the entire area of the long side of the vapor deposition mask portion is not connected to the support portion.
- the short side of the vapor deposition mask portion may include a plurality of convex portions protruding toward the support portion and connected to the support portion.
- the vapor deposition mask portion and the support portion may have a thickness of 50 ⁇ m or less.
- the plurality of vapor deposition mask portions are arranged in a direction intersecting the long side, and the support portion exists between the long sides of the two adjacent vapor deposition mask portions. It does not have to be.
- the present invention is a vapor deposition mask, comprising a metal plate-like base material including a pair of long sides and a pair of short sides, and a plurality of through holes formed in the base material. It is a vapor deposition mask in which a fracture surface partially exists on the short side of the material, while no fracture surface exists on the long side of the substrate.
- the present invention is a vapor deposition mask, comprising a metal plate-like base material including a pair of long sides and a pair of short sides, and a plurality of through holes formed in the base material. It is a vapor deposition mask whose ratio of the torn surface in the said long side of material is smaller than the ratio of the torn surface in the said short side of the said base material.
- the ratio of the fracture surface at the long side of the substrate is calculated by dividing the total width of the fracture surface existing at the long side by the length of the long side, and the fracture at the short side of the substrate.
- the ratio of the cross section may be calculated by dividing the total width of the fracture surfaces existing on the short side by the length of the short side.
- the ratio of the fracture surface on the long side of the substrate is calculated by dividing the number of fracture surfaces existing on the long side by the length of the long side, and the fracture on the short side of the substrate.
- the ratio of the cross section may be calculated by dividing the number of the fracture surfaces existing on the short side by the length of the short side.
- the fracture surface does not exist in a region overlapping with the through hole when the long side is viewed along the width direction of the vapor deposition mask. More preferably, the long side of the substrate does not have a fracture surface over the entire area.
- the short side of the base material may include a plurality of convex portions protruding outward and having the fracture surface.
- the shortest distance in the surface direction of the base material from the long side of the base material to the through hole may be 50 ⁇ m or less.
- the base material has a first surface facing the substrate to which the vapor deposition material that has passed through the through-hole adheres, and a second surface located on the opposite side of the first surface.
- the long side of the base material may have a cross-sectional shape that protrudes to the outermost side at a portion that intersects the first surface.
- the thickness of the base material may be 50 ⁇ m or less.
- FIG. 5 is a sectional view taken along line VV in FIG. 4.
- FIG. 5 is a cross-sectional view taken along line VI-VI in FIG. 4.
- FIG. 7 is a sectional view taken along line VII-VII in FIG. 4. It is sectional drawing which expands and shows the through-hole shown in FIG.
- FIG. 16 is a diagram illustrating a second surface etching process following FIG. 15.
- FIG. 25B It is a figure which shows a mode that the vapor deposition mask provided with the long side which has a cross-sectional shape shown to FIG. 25B has faced the organic electroluminescent board
- FIGS. 1 to 22 are diagrams for explaining an embodiment of the present invention.
- a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example.
- the present invention can be applied to vapor deposition masks used for various purposes without being limited to such applications.
- the terms “plate”, “sheet”, and “film” are not distinguished from each other based only on the difference in names.
- the “plate” is a concept including a member that can be called a sheet or a film.
- plate surface (sheet surface, film surface)
- sheet surface means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member.
- the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate
- the shape, geometric conditions and physical characteristics and their degree are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, lengths and angles
- values of physical characteristics and the like are not limited to a strict meaning and are interpreted to include a range where a similar function can be expected.
- the vapor deposition apparatus 90 which performs the vapor deposition process which vapor-deposits a vapor deposition material on a target object is demonstrated with reference to FIG.
- the vapor deposition apparatus 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask apparatus 10 therein.
- the vapor deposition apparatus 90 further includes exhaust means for making the inside of the vapor deposition apparatus 90 a vacuum atmosphere.
- the crucible 94 contains a vapor deposition material 98 such as an organic light emitting material.
- the heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 under a vacuum atmosphere.
- the vapor deposition mask device 10 is disposed so as to face the crucible 94.
- the vapor deposition mask device 10 includes a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20.
- the frame 15 supports the vapor deposition mask 20 in a state of being pulled in the surface direction so that the vapor deposition mask 20 is not bent.
- the vapor deposition mask device 10 is disposed in the vapor deposition device 90 so that the vapor deposition mask 20 faces a substrate, for example, an organic EL substrate 92, to which the vapor deposition material 98 is attached.
- first surface 20a the surface on the organic EL substrate 92 side
- second surface 20b the surface located on the opposite side of the first surface 20a
- the vapor deposition mask device 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20 as shown in FIG. By providing the magnet 93, the vapor deposition mask 20 can be brought close to the organic EL substrate 92 by attracting the vapor deposition mask 20 to the magnet 93 side by magnetic force.
- FIG. 3 is a plan view showing the vapor deposition mask device 10 as viewed from the first surface 20a side of the vapor deposition mask 20.
- the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20.
- Each vapor deposition mask 20 includes a pair of long sides 26 and a pair of short sides 27, and has, for example, a rectangular shape.
- Each vapor deposition mask 20 is fixed to the frame 15 by, for example, spot welding at a pair of short sides 27 or in the vicinity thereof.
- the vapor deposition mask 20 includes a metal plate-like base material in which a plurality of through holes 25 penetrating the vapor deposition mask 20 are formed.
- the vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.
- FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG.
- the organic EL display device 100 includes an organic EL substrate 92 and pixels including a vapor deposition material 98 provided in a pattern.
- vapor deposition apparatuses 90 each equipped with a vapor deposition mask 20 corresponding to each color are prepared, and the organic EL substrate 92 is sequentially inserted into each vapor deposition apparatus 90.
- an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.
- the vapor deposition process may be performed inside the vapor deposition apparatus 90 which becomes a high temperature atmosphere.
- the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process.
- the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients.
- the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the organic EL substrate 92 are greatly different, a positional shift caused by a difference in their dimensional change occurs.
- the dimensional accuracy and position accuracy of the vapor deposition material will decrease.
- the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the organic EL substrate 92.
- an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15.
- an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used as the material of the base material constituting the vapor deposition mask 20.
- the iron alloy containing nickel examples include an invar material containing nickel of 34% by mass or more and 38% by mass or less, a super invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, 38 Examples thereof include a low thermal expansion Fe—Ni-based plating alloy containing nickel of not less than mass% and not more than 54 mass%.
- the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is set to There is no need to make the values equivalent.
- a material other than the above-described iron alloy may be used as a material constituting the vapor deposition mask 20.
- an iron alloy other than the above-described iron alloy containing nickel such as an iron alloy containing chromium
- an iron alloy called so-called stainless steel can be used.
- alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.
- the vapor deposition mask 20 includes a pair of ear portions (a first ear portion 17 a and a second ear portion 17 b) including a pair of short sides 27 of the vapor deposition mask 20, and a pair of ear portions 17 a and 17 b. And an intermediate portion 18 positioned therebetween.
- the ears 17a and 17b are portions fixed to the frame 15 in the vapor deposition mask 20.
- the ear portions 17 a and 17 b are configured integrally with the intermediate portion 18.
- edge parts 17a and 17b may be comprised by the member different from the intermediate part 18.
- FIG. in this case, the ear portions 17a and 17b are joined to the intermediate portion 18 by welding, for example.
- the intermediate portion 18 includes at least one effective region 22 in which a through hole 25 extending from the first surface 20 a to the second surface 20 b is formed, and a surrounding region 23 surrounding the effective region 22.
- the effective area 22 is an area facing the display area of the organic EL substrate 92 in the vapor deposition mask 20.
- the intermediate portion 18 includes a plurality of effective regions 22 arranged at predetermined intervals along the long side 26 of the vapor deposition mask 20.
- One effective area 22 corresponds to the display area of one organic EL display device 100. For this reason, according to the vapor deposition mask apparatus 10 shown in FIG. 1, the multi-surface vapor deposition of the organic EL display apparatus 100 is possible.
- the effective region 22 has, for example, a substantially rectangular shape in a plan view, and more precisely, a substantially rectangular shape in a plan view.
- each effective region 22 can have various shapes of contours according to the shape of the display region of the organic EL substrate 92.
- each effective area 22 may have a circular outline.
- FIG. 4 is an enlarged plan view showing the effective region 22 from the second surface 20 b side of the vapor deposition mask 20.
- the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches along two directions orthogonal to each other in the effective region 22. Yes.
- An example of the through hole 25 will be described in more detail with reference mainly to FIGS. 5 to 7 are sectional views taken along the VV direction to the VII-VII direction of the effective region 22 shown in FIG.
- the plurality of through holes 25 extend along the normal direction N of the vapor deposition mask 20 from the first surface 20 a on one side along the normal direction N of the vapor deposition mask 20. It penetrates to the second surface 20b on the other side.
- a first recess 30 is formed by etching on the first surface 21a of the base material 21 on one side in the normal direction N of the vapor deposition mask 20, and the vapor deposition mask 20
- a second recess 35 is formed on the second surface 21 b of the base 21 that is the other side in the normal direction N.
- the 1st recessed part 30 is connected to the 2nd recessed part 35, and is formed so that the 2nd recessed part 35 and the 1st recessed part 30 may mutually communicate by this.
- the through hole 25 is configured by a second recess 35 and a first recess 30 connected to the second recess 35.
- the plate of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side.
- the opening area of each second recess 35 in the cross section along the plane is gradually reduced.
- the opening area of each first recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 is from the first surface 20a side of the vapor deposition mask 20. It gradually becomes smaller toward the second surface 20b.
- the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41.
- the connection portion 41 the wall surface 31 of the first recess 30 inclined with respect to the normal direction N of the vapor deposition mask 20 and the wall surface 36 of the second recess 35 inclined with respect to the normal direction N of the vapor deposition mask 20 merge. It is defined by the ridgeline of the overhanging part.
- the connection part 41 defines the penetration part 42 with which the opening area of the through-hole 25 becomes the minimum in the planar view of the vapor deposition mask 20.
- two adjacent through holes 25 are formed on the other surface along the normal direction N of the vapor deposition mask 20, that is, on the first surface 20 a of the vapor deposition mask 20. They are separated from each other along the plate surface of the mask 20. That is, when the base 21 is etched from the side of the first surface 21 a of the base 21 that corresponds to the first surface 20 a of the vapor deposition mask 20 as in the manufacturing method described later, the first recess 30 is produced. The first surface 21 a of the base material 21 remains between the two adjacent first recesses 30.
- two adjacent second concave portions on one side along the normal direction N of the vapor deposition mask 20, that is, on the second surface 20 b side of the vapor deposition mask 20. 35 may be separated from each other along the plate surface of the vapor deposition mask 20. That is, the second surface 21b of the base material 21 may remain between two adjacent second recesses 35.
- a portion of the effective area 22 of the second surface 21 b of the base material 21 that remains without being etched is also referred to as a top portion 43.
- the vapor deposition mask 20 is manufactured so that the width ⁇ of the top portion 43 does not become excessively large.
- the width ⁇ of the top part 43 is preferably 2 ⁇ m or less.
- the width ⁇ of the top portion 43 generally varies depending on the direction in which the vapor deposition mask 20 is cut.
- the widths ⁇ of the top portions 43 shown in FIGS. 5 and 7 may be different from each other.
- the vapor deposition mask 20 may be configured such that the width ⁇ of the top portion 43 is 2 ⁇ m or less when the vapor deposition mask 20 is cut in any direction.
- etching may be performed so that two adjacent second recesses 35 are connected. That is, a place where the second surface 21 b of the base material 21 does not remain may exist between two adjacent second recesses 35. Although not shown, the etching may be performed so that two adjacent second recesses 35 are connected over the entire area of the second surface 21b.
- the first surface 20 a of the vapor deposition mask 20 faces the organic EL substrate 92 as shown by a two-dot chain line in FIG. 5.
- the second surface 20 b of the vapor deposition mask 20 is located on the crucible 94 side that holds the vapor deposition material 98. Therefore, the vapor deposition material 98 adheres to the organic EL substrate 92 through the second recess 35 whose opening area is gradually reduced.
- FIG. 1 the first surface 20 a of the vapor deposition mask 20 faces the organic EL substrate 92 as shown by a two-dot chain line in FIG. 5.
- the second surface 20 b of the vapor deposition mask 20 is located on the crucible 94 side that holds the vapor deposition material 98. Therefore, the vapor deposition material 98 adheres to the organic EL substrate 92 through the second recess 35 whose opening area is gradually reduced.
- the deposition material 98 moves along the normal direction N of the organic EL substrate 92 from the crucible 94 toward the organic EL substrate 92 as indicated by an arrow from the second surface 20 b side to the first surface 20 a.
- the organic EL substrate 92 may move in a direction greatly inclined with respect to the normal direction N of the organic EL substrate 92.
- the thickness t of the vapor deposition mask 20 is reduced, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. It is considered preferable. That is, it can be said that it is preferable to use the base material 21 having a thickness t as small as possible within the range in which the strength of the vapor deposition mask 20 can be secured as the base material 21 for constituting the vapor deposition mask 20. Considering this point, in the present embodiment, the thickness t of the vapor deposition mask 20 is preferably set to 50 ⁇ m or less, for example, 5 ⁇ m or more and 50 ⁇ m or less.
- the thickness t is the thickness of the surrounding region 23, that is, the thickness of the portion of the vapor deposition mask 20 where the first recess 30 and the second recess 35 are not formed. Accordingly, it can be said that the thickness t is the thickness of the substrate 21.
- a straight line L ⁇ b> 1 that passes through the connection portion 41, which is a portion having the minimum opening area of the through-hole 25, and another arbitrary position of the wall surface 36 of the second recess 35 is a normal direction of the vapor deposition mask 20.
- the minimum angle made with respect to N is represented by the symbol ⁇ 1.
- the symbol ⁇ represents the width of a portion (hereinafter also referred to as a rib portion) remaining in the effective region 22 of the first surface 21 a of the base material 21 without being etched.
- the width ⁇ of the rib part and the dimension r 2 of the through part 42 are appropriately determined according to the dimension of the organic EL display device and the number of display pixels.
- the width ⁇ of the rib portion is not less than 5 ⁇ m and not more than 40 ⁇ m
- the dimension r 2 of the through portion 42 is not less than 10 ⁇ m and not more than 60 ⁇ m.
- the vapor deposition mask 20 according to the present embodiment is particularly effective when an organic EL display device having a pixel density of 450 ppi or more is manufactured.
- an example of the dimensions of the vapor deposition mask 20 required for producing such an organic EL display device having a high pixel density will be described with reference to FIG.
- FIG. 8 is an enlarged cross-sectional view of the through hole 25 of the vapor deposition mask 20 shown in FIG.
- the distance from the first surface 20 a of the vapor deposition mask 20 to the connection portion 41 in the direction along the normal direction N of the vapor deposition mask 20, that is, the first concave portion. the height of the wall 31 of the 30 is represented by reference numeral r 1.
- the first recess 30 dimensions of the first recess 30 in the portion connected to the second recess 35, i.e. the dimension of the through region 42 is represented by reference numeral r 2.
- the angle formed by the straight line L2 connecting the connecting portion 41 and the leading edge of the first recess 30 on the first surface 21a of the base material 21 with respect to the normal direction N of the base material 21 is It is represented by the symbol ⁇ 2.
- dimension r 2 of the penetrating part 42 is preferably set below and 60 ⁇ m or 10 [mu] m. Accordingly, it is possible to provide the vapor deposition mask 20 that can produce an organic EL display device having a high pixel density.
- the height r 1 of the wall surface 31 of the first recess 30 is set to 6 ⁇ m or less.
- the angle ⁇ 2 it is possible to suppress the vapor deposition material 98 that has come through at a large inclination angle and passed through the through portion 42 from adhering to the organic EL substrate 92. It can suppress that the vapor deposition material 98 adheres to a part outside the part which overlaps the penetration part 42 among these. That is, reducing the angle ⁇ 2 leads to suppression of variations in the area and thickness of the vapor deposition material 98 attached to the organic EL substrate 92. From such a viewpoint, for example, the through hole 25 is formed such that the angle ⁇ 2 is 45 degrees or less. In FIG.
- the dimension of the first recess 30 in the first surface 21a that is, the opening dimension of the through hole 25 in the first surface 21a is larger than the dimension r2 of the first recess 30 in the connection part 41.
- An example is shown. That is, the example in which the value of the angle ⁇ 2 is a positive value is shown.
- the dimension r2 of the first recess 30 in the connection part 41 may be larger than the dimension of the first recess 30 in the first surface 21a. That is, the value of the angle ⁇ 2 may be a negative value.
- the metal plate 64 for manufacturing a vapor deposition mask is prepared.
- the metal plate 64 is prepared, for example, in the form of a roll obtained by winding a long metal plate.
- a metal plate made of an iron alloy containing nickel is used as the metal plate 64.
- the thickness of the metal plate 64 is, for example, 3 ⁇ m, may be 5 ⁇ m or more, and may be 10 ⁇ m or more. Further, the thickness of the metal plate 64 is, for example, 50 ⁇ m or less, 30 ⁇ m or less, or 20 ⁇ m or less.
- a rolling method, a plating film forming method, or the like can be employed as a method for producing the metal plate 64 having a desired thickness.
- the metal plate 64 is processed to form a plurality of vapor deposition mask portions including the through holes 25 in the metal plate 64 (processing step). Thereafter, by separating the vapor deposition mask portion from the metal plate 64 (separation process), the sheet-like vapor deposition mask 20 can be obtained.
- the step of processing the metal plate 64 includes a step of etching the long metal plate 64 using a photolithography technique to form the first recess 30 on the metal plate 64 from the first surface 64a side, and photolithography. Etching the metal plate 64 to form a second recess 35 on the metal plate 64 from the second surface 64b side. And the 1st recessed part 30 and the 2nd recessed part 35 which were formed in the metal plate 64 mutually communicate, and the through-hole 25 is produced in the metal plate 64.
- the first recessed portion 30 forming step is performed before the second recessed portion 35 forming step, and between the first recessed portion 30 forming step and the second recessed portion 35 forming step, The process of sealing the produced 1st recessed part 30 is implemented.
- the process of sealing the produced 1st recessed part 30 is implemented.
- details of each process will be described.
- FIG. 9 shows a manufacturing apparatus 60 for producing the vapor deposition mask 20.
- a wound body 62 in which a metal plate 64 is wound around a core 61 is prepared. And by rotating this core 61 and unwinding the wound body 62, the metal plate 64 extended in strip shape is supplied as shown in FIG.
- Supplied metal plate 64 is transported to processing device (etching means) 70 by transport roller 72.
- processing device (etching means) 70 Each processing shown in FIGS. 10 to 17 is performed by the processing apparatus 70.
- a plurality of vapor deposition masks 20 are allocated in the width direction of the metal plate 64.
- the metal plate 64 is processed so that a plurality of later-described vapor deposition mask portions that are separated from the metal plate 64 and become the vapor deposition mask 20 are arranged in the width direction of the metal plate 64.
- the plurality of vapor deposition masks 20 are allocated to the metal plate 64 so that the direction of the long side 26 of the vapor deposition mask portion, that is, the vapor deposition mask 20 coincides with the longitudinal direction of the long metal plate 64.
- resist films 65 c and 65 d containing a negative photosensitive resist material are formed on the first surface 64 a and the second surface 64 b of the metal plate 64.
- a coating liquid containing a negative photosensitive resist material is applied on the first surface 64a and the second surface 64b of the metal plate 64, and then the coating liquid is dried, whereby the resist films 65c and 65d are formed.
- exposure masks 68a and 68b are prepared so as not to transmit light to the regions to be removed of the resist films 65c and 65d.
- the exposure masks 68a and 68b are respectively formed on the resist films 65c and 65d as shown in FIG. To place.
- As the exposure masks 68a and 68b for example, glass dry plates are used in which light is not transmitted to the regions to be removed of the resist films 65c and 65d. Thereafter, the exposure masks 68a and 68b are sufficiently adhered to the resist films 65c and 65d by vacuum adhesion.
- the photosensitive resist material a positive type may be used. In this case, an exposure mask that transmits light to a region to be removed of the resist film is used as the exposure mask.
- the resist films 65c and 65d are exposed through the exposure masks 68a and 68b (exposure process). Further, the resist films 65c and 65d are developed in order to form images on the exposed resist films 65c and 65d (development process).
- the first resist pattern 65a is formed on the first surface 64a of the metal plate 64
- the second resist pattern 65b is formed on the second surface 64b of the metal plate 64.
- the developing process may include a resist heat treatment process for increasing the hardness of the resist films 65c and 65d or for causing the resist films 65c and 65d to adhere more firmly to the metal plate 64.
- the resist heat treatment step can be performed, for example, at room temperature or higher and 400 ° C. or lower.
- a first surface etching process is performed in which a region of the first surface 64a of the metal plate 64 that is not covered with the first resist pattern 65a is etched using a first etching solution.
- the first etching solution is sprayed toward the first surface 64a of the metal plate 64 from the nozzle disposed on the side facing the first surface 64a of the metal plate 64 to be conveyed through the first resist pattern 65a.
- erosion by the first etching solution proceeds in a region of the metal plate 64 that is not covered with the first resist pattern 65a.
- a large number of first recesses 30 are formed in the first surface 64 a of the metal plate 64.
- the first etching solution for example, a solution containing a ferric chloride solution and hydrochloric acid is used.
- the first recess 30 is covered with a resin 69 having resistance to the second etching solution used in the subsequent second surface etching step. That is, the first recess 30 is sealed with a resin 69 having resistance to the second etching solution.
- a film of resin 69 is formed so as to cover not only the formed first recess 30 but also the first surface 64a (first resist pattern 65a).
- the second surface 64 b of the metal plate 64 is etched on the region not covered with the second resist pattern 65 b to form the second recess 35 on the second surface 64 b.
- An etching process is performed.
- the second surface etching process is performed until the first recess 30 and the second recess 35 communicate with each other, thereby forming the through hole 25.
- the second etching solution for example, a solution containing a ferric chloride solution and hydrochloric acid is used in the same manner as the first etching solution.
- the erosion by the second etching solution is performed on the portion of the metal plate 64 that is in contact with the second etching solution. Therefore, erosion does not proceed only in the normal direction N (thickness direction) of the metal plate 64 but also proceeds in a direction along the plate surface of the metal plate 64.
- N thickness direction
- two second recesses 35 respectively formed at positions facing two adjacent holes 66a of the second resist pattern 65b are positioned between the two holes 66a. It ends before joining at the back side of the bridge portion 67a. Thereby, as shown in FIG. 16, the above-described top portion 43 can be left on the second surface 64 b of the metal plate 64.
- the resin 69 is removed from the metal plate 64 as shown in FIG.
- the resin 69 can be removed by using, for example, an alkaline stripping solution.
- an alkaline stripping solution is used, the resist patterns 65a and 65b are removed simultaneously with the resin 69, as shown in FIG.
- the resist patterns 65a and 65b may be removed separately from the resin 69 by using a remover different from the remover for removing the resin 69.
- FIG. 18 is a plan view showing the intermediate product 50 obtained by processing the vapor deposition mask 20 to form the through holes 25 as described above.
- the vapor deposition mask 20 is assigned to the intermediate product 50.
- the intermediate product 50 includes a plurality of vapor deposition mask portions 51 and support portions 56.
- the symbol T ⁇ b> 1 represents the conveyance direction of the metal plate 64 in the manufacturing process of the vapor deposition mask 20
- the symbol T ⁇ b> 2 represents a direction orthogonal to the conveyance direction T ⁇ b> 1 (hereinafter also referred to as the width direction).
- the transport direction T1 coincides with the longitudinal direction of the long metal plate 64.
- the vapor deposition mask portion 51 is a portion of the metal plate 64 that becomes the vapor deposition mask 20 by being separated.
- the vapor deposition mask portion 51 includes a pair of long sides 52 and a pair of short sides 53 corresponding to the pair of long sides 26 and the pair of short sides 27 of the vapor deposition mask 20.
- a plurality of through holes 25 are formed in the vapor deposition mask portion 51.
- the vapor deposition mask portion 51 includes an effective region 22 in which a plurality of through holes 25 are formed, and a surrounding region 23 surrounding the effective region 22.
- the plurality of vapor deposition mask portions 51 are arranged in a direction intersecting the long side 52.
- the long side 52 is parallel to the transport direction T1
- the direction in which the plurality of vapor deposition mask portions 51 are arranged is parallel to the width direction T2.
- the support portion 56 is a portion that surrounds the plurality of vapor deposition mask portions 51 in a plan view and is partially connected to the vapor deposition mask portion 51. In the example shown in FIG. 18, the support portion 56 is a portion other than the vapor deposition mask portion 51 in the metal plate 64.
- FIG. 19 is an enlarged view showing a region surrounded by a dotted line with the symbol XIX in the intermediate product 50 in FIG.
- the short side 53 of the vapor deposition mask portion 51 is partially connected to the support portion 56.
- the short side 53 of the vapor deposition mask portion 51 includes a plurality of convex portions 53 a that protrude toward the support portion 56 and are connected to the support portion 56.
- the long side 52 of the vapor deposition mask portion 51 is not connected to the support portion 56.
- a gap 55 exists across the entire long side 52 between the long side 52 of the vapor deposition mask portion 51 and the support portion 56. Moreover, the support part 56 does not exist between the long sides 52 of the two adjacent vapor deposition mask parts 51. In other words, a gap 55 exists across the entire long side 52 between the long sides 52 of the two adjacent vapor deposition mask portions 51.
- the gap 55 can be formed simultaneously with the through hole 25 in the above-described processing step.
- the resist films 65c and 65d are exposed and developed so that the resist patterns 65a and 65b do not remain in the portion of the metal plate 64 where the gap 55 is to be formed.
- regions of the metal plate 64 that are not covered with the resist patterns 65a and 65b are removed by etching. Accordingly, the gap 55 shown in FIGS. 18 and 19 can be formed in the metal plate 64 simultaneously with the plurality of through holes 25.
- the etching for forming the gap 55 may be performed on both sides of the first surface 64a and the second surface 64b of the metal plate 64 (Example 1), respectively, and the first surface 64a and the second surface of the metal plate 64 may be performed. It may be implemented only on one side of the surface 64b (Example 2).
- the resist film 65c is exposed and developed so that the resist pattern 65a does not remain in the portion of the first surface 64a of the metal plate 64 where the gap 55 is to be formed (hereinafter also referred to as a gap-predicted portion). To do. Further, the resist film 65d is exposed and developed so that the resist pattern 65b does not remain in the planned gap portion of the second surface 64b of the metal plate 64. Subsequently, the metal plate 64 is etched from the first surface 64a side.
- the first concave portion 30 is formed in the portion of the first surface 64a of the metal plate 64 that should be the effective region 22 of the vapor deposition mask 20, and at the same time, the first concave portion 30 is formed in the planned gap portion of the first surface 64a.
- the first recess 30 is covered with the resin 69.
- the metal plate 64 is etched from the second surface 64b side.
- the second concave portion 35 is formed in the portion of the second surface 64b of the metal plate 64 that should be the effective region 22 of the vapor deposition mask 20, and at the same time, the second concave portion 35 is formed in the planned gap portion of the second surface 64b.
- the gap 55 can be formed simultaneously with the through hole 25.
- the resist film 65d is exposed and developed so that the resist pattern 65b does not remain in the planned gap portion of the second surface 64b of the metal plate 64.
- the resist film 65 c is exposed and developed so that the resist pattern 65 a remains in the planned gap portion of the first surface 64 a of the metal plate 64.
- the metal plate 64 is etched from the first surface 64a side, and the first concave portion 30 is formed in a portion of the metal plate 64 that should be the effective region 22 of the vapor deposition mask 20.
- the first recess 30 is not formed in the planned clearance portion of the first surface 64a.
- the first recess 30 is covered with the resin 69.
- the planned clearance portion of the first surface 64 a is also covered with the resin 69.
- the metal plate 64 is etched from the second surface 64b side.
- the second concave portion 35 is formed in the portion of the second surface 64b of the metal plate 64 that should be the effective region 22 of the vapor deposition mask 20, and at the same time, the second concave portion 35 is formed in the planned gap portion of the second surface 64b.
- the gap 55 can be formed in the planned gap.
- Example 2 during the first etching step for forming the first recess 30, half etching is not performed on the planned gap portion of the first surface 64 a of the metal plate 64. For this reason, even if it is a case where the thickness of the metal plate 64 is small, it can suppress that a gap
- the dimension of the gap 55 is set so that the vapor deposition mask portion 51 does not come into contact with the support portion 56 or another vapor deposition mask portion 51 when the intermediate product 50 is conveyed.
- a dimension S1 in the width direction T2 of the gap 55 between the vapor deposition mask portion 51 and the support portion 56 is, for example, not less than 0.1 mm and not more than 5 mm.
- the dimension S2 in the width direction T2 of the gap 55 between two adjacent vapor deposition mask portions 51 is, for example, not less than 0.1 mm and not more than 5 mm.
- the dimension S3 in the transport direction T1 between the short side 53 of the vapor deposition mask portion 51 and the support portion 56 is, for example, 30 ⁇ m or more and 100 ⁇ m or less.
- the pitch P of the convex part 53a in the direction of the short side 53 is 200 micrometers or more and 400 micrometers or less, for example.
- a separation step of separating the vapor deposition mask portion 51 from the support portion 56 in the above-described intermediate product 50 is performed.
- the intermediate product 50 obtained by processing the metal plate 64 is conveyed to a separation device 73 for performing a separation step.
- the intermediate product 50 is conveyed to the separation device 73 by the conveying rollers 72 and 72 that rotate while being held.
- a suppression unit that suppresses shaking and bending of the vapor deposition mask portion 51 may be provided in the intermediate product 50, the transport roller 72, or the transport path.
- the suppression means includes a pair of films provided on the first surface side and the second surface side of the intermediate product 50.
- FIG. 20 is a diagram showing a separation process for separating the vapor deposition mask portion 51 from the support portion 56.
- the long side 52 of the vapor deposition mask portion 51 and the support portion 56 are not connected.
- the vapor deposition mask 20 can be obtained by separating the vapor deposition mask portion 51 from the support portion 56 by breaking the connection portion 54 between the vapor deposition mask portion 51 and the support portion 56 at the short side 53.
- FIG. 21 is an enlarged plan view showing the vapor deposition mask 20 obtained from the intermediate product 50.
- the separation step includes, for example, a breaking step of breaking the connection portion 54 connected to the support portion 56 in the short side 53 of the vapor deposition mask portion 51.
- a portion of the vapor deposition mask 20 where the connection portion 54 is broken for example, the tip of the convex portion 53a of the short side 53 becomes a fracture surface 27b.
- the fracture surface 27 b partially exists on the short side 27 of the vapor deposition mask 20.
- FIG. 22 is a side view showing a case where the fracture surface 27b of the convex portion 27a of the short side 27 of the vapor deposition mask 20 is viewed from the direction of the arrow XXII in FIG.
- the connection portion 54 between the short side 53 of the vapor deposition mask portion 51 and the support portion 56 is broken by pulling the vapor deposition mask portion 51 upward, for example, in FIG.
- a burr 27c resulting from the force received from the support portion 56 at the time of fracture may occur on the fracture surface 27b of the convex portion 27a.
- the burr 27c extends in the direction of the force received from the support portion 56 at the time of breaking (downward in FIG. 22).
- the fracture surface 27b can be defined as a surface on which such a burr 27c exists.
- the long side 52 of the vapor deposition mask portion 51 is not connected to the support portion 56, the long side 26 of the vapor deposition mask 20 has no fracture surface.
- FIG. 23A and FIG. 23B respectively show the results of observing the region of the long side 26 surrounded by the dotted line with the symbol XXIII in the vapor deposition mask 20 of FIG. 22 from the first surface 20a side and the second surface 20b side.
- FIG. 24A and 24B the region of the short side 27 surrounded by the dotted line with the symbol XXIV in the vapor deposition mask 20 of FIG. 22 was observed from the first surface 20a side and the second surface 20b side, respectively. It is a figure which shows a result.
- the magnification at the time of observation is 10 times.
- a black portion (hereinafter also referred to as a dark portion) 27x was observed at the tip of the convex portion 27a of the short side 27.
- the width of the dark part 27x was 13.8 ⁇ m.
- the same dark portion 27y was also observed when observed from the second surface 20b side of the vapor deposition mask 20.
- FIG. 25A is a diagram schematically showing the cross-sectional shape of the long side 26 of the vapor deposition mask 20, that is, the region surrounded by the dotted line with the symbol XXIII in the vapor deposition mask 20 of FIG. 22.
- FIG. 25B is a diagram showing a modification of the cross-sectional shape of the long side 26.
- the long side 26 of the vapor deposition mask 20 has a shape that protrudes inward due to side etching that occurs during the etching process that is performed to form the through hole 25. A curved surface may be formed.
- FIG. 25A is a diagram schematically showing the cross-sectional shape of the long side 26 of the vapor deposition mask 20, that is, the region surrounded by the dotted line with the symbol XXIII in the vapor deposition mask 20 of FIG. 22.
- FIG. 25B is a diagram showing a modification of the cross-sectional shape of the long side 26.
- the long side 26 of the vapor deposition mask 20 has a shape
- FIG. 25A is a diagram illustrating an example of a cross-sectional shape of the long side 26 when the gap 55 is formed by etching only from the second surface 64 b of the metal plate 64.
- FIG. 25B is a diagram illustrating an example of a cross-sectional shape of the long side 26 when the gap 55 is formed by etching from both sides of the first surface 64a and the second surface 64b of the metal plate 64.
- the cross-sectional shape corresponding to the planar photographs shown in FIGS. 23A and 23B is that of FIG. 25A.
- the long side 26 spreads outward as it goes from the second surface 20b side to the first surface 20a side, as shown in FIG. 25A.
- a curved surface is formed. This curved surface is visible when the long side 26 is observed from the second surface 20b side, but is not visible when the long side 26 is observed from the first surface 20a side.
- the long side 26 has a cross-sectional shape that protrudes to the outermost side at a portion that intersects the first surface 20a.
- the dark portion 26y confirmed when the long side 26 is observed from the second surface 20b side is considered to be caused by light scattering on the curved surface.
- the first side 20a is located on the long surface 26 as shown in FIG. 25B.
- a curved surface resulting from side etching when forming the concave portion 30 and a curved surface resulting from side etching when forming the second concave portion 35 located on the second surface 20b side are formed.
- the long side 26 has a cross-sectional shape that protrudes outwardly at a portion where the curved surface on the first surface 20a side and the curved surface on the second surface 20b side intersect.
- the degree of side etching is also on the second surface 20b side. Will be bigger.
- the curved surface formed on the long side 26 is also larger on the second surface 20b side. Therefore, the width of the dark part confirmed when the long side 26 is observed from the second surface 20b side is also considered to be larger than the width of the dark part confirmed when the long side 26 is observed from the first surface 20a side. .
- FIG. 25C is a diagram illustrating a state in which the vapor deposition mask 20 having the long side 26 having the cross-sectional shape illustrated in FIG. 25A is facing the organic EL substrate 92.
- FIG. 25D is a diagram showing a state where the vapor deposition mask 20 having the long side 26 having the cross-sectional shape shown in FIG. 25B faces the organic EL substrate 92.
- the plurality of vapor deposition masks 20 are arranged so as to be arranged at a predetermined interval M in the direction of the short side 27.
- the interval M is set to be equal to or greater than a predetermined separation distance so as to prevent the long sides 26 of the two adjacent vapor deposition masks 20 from contacting each other.
- interval M is a space
- FIG. 25C the vapor deposition mask 20 is arranged so that the interval M at the portion of the long side 26 that intersects the first surface 20a is equal to or greater than a predetermined separation distance.
- the vapor deposition mask 20 is set such that the interval M at the portion of the long side 26 where the curved surface on the first surface 20a side and the curved surface on the second surface 20b side intersect is equal to or greater than a predetermined separation distance. Are arranged.
- the contact area with respect to the organic EL substrate 92 is larger in the example shown in FIG. 25C.
- the example shown in FIG. 25C is more advantageous in terms of adhesion to the organic EL substrate 92.
- the improvement of the adhesion to the organic EL substrate 92 and the reduction of the contact risk between the two adjacent vapor deposition masks 20 are in a trade-off relationship.
- two requests in a trade-off relationship can be satisfied at a higher level than in the example shown in FIG. 25D.
- the vapor deposition mask 20 when the vapor deposition masks 20 come into contact with each other, the vapor deposition mask 20 is damaged or deformed.
- the contact area of the first surface 20a of the vapor deposition mask 20 with respect to the organic EL substrate 92 decreases, and the adhesion with respect to the organic EL substrate 92 decreases.
- excessively reducing the distance between the two adjacent vapor deposition masks 20 may cause a decrease in adhesion to the organic EL substrate 92.
- FIG. 26 is a cross-sectional view schematically showing a region surrounded by a dotted line labeled XXIV in the vapor deposition mask 20 of FIG.
- the short side 27 of the vapor deposition mask 20 has the second surface 20b due to the short side 27 being pulled from the support portion 56 to the first surface 20a side during the above-described breaking process.
- a curved surface having a convex shape on the outside may be formed on the side.
- the dark part 27y confirmed when the short side 27 is observed from the second surface 20b side is caused by light scattering on the curved surface.
- flash 27c which protruded from the 1st surface 20a may be formed in the 1st surface 20a side.
- the dark part 27x confirmed when the short side 27 is observed from the first surface 20a side is considered to be caused by light scattering in the burr 27c.
- the shortest distance S4 (see FIG. 21) in the surface direction of the base material 21 from the long side 26 to the through hole 25 of the vapor deposition mask 20 is generally in the surface direction of the base material 21 from the short side 27 to the through hole 25. Small compared to the shortest distance. For this reason, when a deformation such as a wavy shape appears on the long side 26, the dimensional accuracy and the positional accuracy of the vapor deposition material 98 attached to the organic EL substrate 92 through the through hole 25 located in the vicinity of the long side 26 are lowered. End up.
- the vapor deposition mask portion 51 of the intermediate product 50 is not connected to the support portion 56.
- the long side 52 does not receive the force from the support part 56 in the separation process which isolate
- the region of the long side 52 of the vapor deposition mask portion 51 that overlaps the through hole 25 when the long side 52 is viewed along the width direction T ⁇ b> 2 of the intermediate product 50 is not connected to the support portion 56. It is preferable.
- the long side 26 is viewed in the width direction of the vapor deposition mask 20
- a fracture surface may exist in a region that does not overlap with the through hole 25 when the long side 26 is viewed in the width direction of the vapor deposition mask 20.
- the ratio of the portion connected to the support portion 56 in the long side 52 of the vapor deposition mask portion 51 is the portion connected to the support portion 56 in the short side 53 of the vapor deposition mask portion 51.
- the ratio of the fracture surface at the long side 26 is smaller than the ratio of the fracture surface at the short side 27.
- the ratio of the portion connected to the support portion 56 in the short side 53 of the vapor deposition mask portion 51 is, for example, the sum of the widths K4 (see FIG. 19) of the portion connected to the support portion 56 in the short side 53. It is calculated by dividing by the length K2 of the short side 53 (see FIG. 18). For example, as shown in FIG. 19, the width K ⁇ b> 4 is the width of the narrowest portion of the convex portions 53 a connected to the support portion 56. Similarly, the ratio of the portions connected to the support portion 56 among the long sides 52 of the vapor deposition mask portion 51 is, for example, the sum of the widths of the portions connected to the support portion 56 among the long sides 52. Is divided by the length K1 (see FIG. 18).
- the ratio of the fracture surface 27b on the short side 27 of the vapor deposition mask 20 is, for example, the sum of the widths K6 (see FIG. 21) of the fracture surface 27b existing on the short side 27 and the length K5 of the short side 27 (see FIG. 21). ) Divided by.
- the ratio of the fracture surface at the long side 26 of the vapor deposition mask 20 is calculated, for example, by dividing the total width of the fracture surfaces existing at the long side 26 by the length of the long side 26.
- the ratio of the portions connected to the support portion 56 in the short side 53 of the vapor deposition mask portion 51 is the number of portions of the short side 53 connected to the support portion 56 by the length K2 of the short side 53. It may be calculated by dividing. In the example shown in FIG. 19, the number of portions connected to the support portion 56 in the short side 53 is four. Similarly, the ratio of the portion connected to the support portion 56 in the long side 52 of the vapor deposition mask portion 51 is the number of portions connected to the support portion 56 in the long side 52. It may be calculated by dividing by.
- the ratio of the fracture surface 27b on the short side 27 of the vapor deposition mask 20 may be calculated by dividing the number of fracture surfaces 27b existing on the short side 27 by the length K5 of the short side 27.
- the ratio of the fracture surface on the long side 26 of the vapor deposition mask 20 may be calculated by dividing the number of fracture surfaces existing on the long side 26 by the length of the long side 26.
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Abstract
Description
前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の幅の総和を前記長辺の長さで割ることにより算出され、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の幅の総和を前記短辺の長さで割ることにより算出されてもよい。
若しくは、前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の個数を前記長辺の長さで割ることにより算出され、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の個数を前記短辺の長さで割ることにより算出されてもよい。
前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の幅の総和を前記長辺の長さで割ることにより算出され、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の幅の総和を前記短辺の長さで割ることにより算出されてもよい。
若しくは、前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の個数を前記長辺の長さで割ることにより算出され、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の個数を前記短辺の長さで割ることにより算出されてもよい。
前記基材の前記長辺における破断面の比率は、前記長辺に存在する前記破断面の幅の総和を前記長辺の長さで割ることにより算出され、前記基材の前記短辺における破断面の比率は、前記短辺に存在する前記破断面の幅の総和を前記短辺の長さで割ることにより算出されてもよい。
若しくは、前記基材の前記長辺における破断面の比率は、前記長辺に存在する前記破断面の個数を前記長辺の長さで割ることにより算出され、前記基材の前記短辺における破断面の比率は、前記短辺に存在する前記破断面の個数を前記短辺の長さで割ることにより算出されてもよい。
まず、対象物に蒸着材料を蒸着させる蒸着処理を実施する蒸着装置90について、図1を参照して説明する。図1に示すように、蒸着装置90は、その内部に、蒸着源(例えばるつぼ94)、ヒータ96、及び蒸着マスク装置10を備える。また、蒸着装置90は、蒸着装置90の内部を真空雰囲気にするための排気手段を更に備える。るつぼ94は、有機発光材料などの蒸着材料98を収容する。ヒータ96は、るつぼ94を加熱して、真空雰囲気の下で蒸着材料98を蒸発させる。蒸着マスク装置10は、るつぼ94と対向するよう配置されている。
以下、蒸着マスク装置10について説明する。図1に示すように、蒸着マスク装置10は、蒸着マスク20と、蒸着マスク20を支持するフレーム15と、を備える。フレーム15は、蒸着マスク20が撓んでしまうことがないように、蒸着マスク20をその面方向に引っ張った状態で支持する。蒸着マスク装置10は、図1に示すように、蒸着マスク20が、蒸着材料98を付着させる対象物である基板、例えば有機EL基板92に対面するよう、蒸着装置90内に配置される。以下の説明において、蒸着マスク20の面のうち、有機EL基板92側の面を第1面20aと称し、第1面20aの反対側に位置する面を第2面20bと称する。
次に、蒸着マスク20について詳細に説明する。図3に示すように、蒸着マスク20は、蒸着マスク20の一対の短辺27を含む一対の耳部(第1耳部17a及び第2耳部17b)と、一対の耳部17a,17bの間に位置する中間部18と、を備えている。
まず、耳部17a,17bについて詳細に説明する。耳部17a,17bは、蒸着マスク20のうちフレーム15に固定される部分である。本実施の形態において、耳部17a,17bは、中間部18と一体的に構成されている。なお、耳部17a,17bは、中間部18とは別の部材によって構成されていてもよい。この場合、耳部17a,17bは、例えば溶接によって中間部18に接合される。
次に、中間部18について説明する。中間部18は、第1面20aから第2面20bに至る貫通孔25が形成された、少なくとも1つの有効領域22と、有効領域22を取り囲む周囲領域23と、を含む。有効領域22は、蒸着マスク20のうち、有機EL基板92の表示領域に対面する領域である。
次に、蒸着マスク20を製造する方法について説明する。
はじめに、蒸着マスクを製造するための金属板64を準備する。金属板64は、例えば、長尺状の金属板を巻き取ることにより得られるロールの形態で準備される。金属板64としては、例えば、ニッケルを含む鉄合金から構成された金属板を用いる。金属板64の厚みは、例えば3μmであり、5μm以上であってもよく、10μm以上であってもよい。また、金属板64の厚みは、例えば50μm以下であり、30μm以下であってもよく、20μm以下であってもよい。所望の厚みを有する金属板64を作製する方法としては、圧延法、めっき成膜法などを採用することができる。
金属板64を加工する工程は、フォトリソグラフィー技術を用いたエッチングを長尺の金属板64に施して、金属板64に第1面64aの側から第1凹部30を形成する工程と、フォトリソグラフィー技術を用いたエッチングを金属板64に施して、金属板64に第2面64bの側から第2凹部35を形成する工程と、を含んでいる。そして、金属板64に形成された第1凹部30と第2凹部35とが互いに通じ合うことによって、金属板64に貫通孔25が作製される。以下に説明する例では、第1凹部30の形成工程を、第2凹部35の形成工程の前に実施し、且つ、第1凹部30の形成工程と第2凹部35の形成工程の間に、作製された第1凹部30を封止する工程を実施する。以下、各工程の詳細を説明する。
なお感光性レジスト材料として、ポジ型のものが用いられてもよい。この場合、露光マスクとして、レジスト膜のうちの除去したい領域に光を透過させるようにした露光マスクを用いる。
例2の場合、第1凹部30を形成する第1のエッチング工程の際に、金属板64の第1面64aの隙間予定部にハーフエッチングが施されない。このため、金属板64の厚みが小さい場合であっても、第1のエッチング工程の後に金属板64の隙間予定部に折れが生じてしまうことを抑制することができる。
続いて、上述の中間製品50において蒸着マスク部分51を支持部分56から分離する分離工程を実施する。まず、図9に示すように、金属板64を加工することによって得られた中間製品50を、分離工程を実施するための分離装置73へ搬送する。例えば、中間製品50を狭持した状態で回転する搬送ローラー72,72により、分離装置73へ搬送する。ところで、上述のように中間製品50において蒸着マスク部分51の長辺52が支持部分56に接続されていない場合、搬送時に蒸着マスク部分51が揺れたり撓んだりし易いと考えられる。この点を考慮し、蒸着マスク部分51の揺れや撓みを抑制する抑制手段を、中間製品50、搬送ローラー72又は搬送路に設けてもよい。例えば、抑制手段は、中間製品50の第1面側及び第2面側に設けられた一対のフィルムを含む。中間製品50を一対のフィルムで挟んだ状態で中間製品50を73へ搬送することにより、蒸着マスク部分51が揺れたり撓んだりすることを抑制することができる。
蒸着マスク20の長辺26から貫通孔25までの、基材21の面方向における最短距離S4(図21参照)は、一般に、短辺27から貫通孔25までの、基材21の面方向における最短距離に比べて小さい。このため、長辺26に波打ち形状などの変形が現れると、長辺26の近傍に位置する貫通孔25を通って有機EL基板92に付着する蒸着材料98の寸法精度や位置精度が低下してしまう。ここで本実施の形態においては、中間製品50の蒸着マスク部分51が支持部分56に接続されていない。このため、蒸着マスク部分51を支持部分56から分離する分離工程の際に、長辺52は、支持部分56からの力を受けないので、長辺26に波打ち形状などの変形が現れることを抑制することができる。これによって、高い寸法精度や位置精度で有機EL基板92に蒸着材料98を付着させることができる。
上述の実施の形態においては、中間製品50の蒸着マスク部分51の長辺52の全域が支持部分56に接続されていない例を示した。しかしながら、これに限られることはなく、貫通孔25の位置精度に影響を及ぼさない範囲内で、中間製品50の蒸着マスク部分51の長辺52が支持部分56に接続されていてもよい。例えば、長辺52のうち、中間製品50の幅方向T2に沿って長辺52を見た場合に貫通孔25と重ならない領域において、長辺52が支持部分56に接続されていてもよい。言い換えると、蒸着マスク部分51の長辺52のうち、少なくとも、中間製品50の幅方向T2に沿って長辺52を見た場合に貫通孔25と重なる領域は、支持部分56に接続されていないことが好ましい。この場合、蒸着マスク20の幅方向において長辺26を見た場合に貫通孔25と重なる領域には破断面が存在しない。言い換えると、蒸着マスク20の幅方向において長辺26を見た場合に貫通孔25と重ならない領域には、破断面が存在していてもよい。蒸着マスク部分51の長辺52のうち幅方向T2において貫通孔25と重なる領域を支持部分56に接続しないことにより、蒸着マスク部分51を支持部分56から分離する際に蒸着マスク部分51に生じる変形が貫通孔25の位置精度に影響を及ぼすことを抑制することができる。
上述の実施の形態においては、隣り合う2つの蒸着マスク部分51の長辺52の間に支持部分56が存在しない例を示した。しかしながら、これに限られることはなく、図27に示すように、隣り合う2つの蒸着マスク部分51の長辺52の間に、搬送方向T1に延び、且つ蒸着マスク部分51の長辺52に接続されていない支持部分56が存在していてもよい。
15 フレーム
20 蒸着マスク
21 基材
22 有効領域
23 周囲領域
25 貫通孔
26 長辺
27 短辺
27a 凸部
27b 破断面
27c バリ
30 第1凹部
31 壁面
35 第2凹部
36 壁面
41 接続部
43 トップ部
50 中間製品
51 蒸着マスク部分
52 長辺
53 短辺
53a 凸部
54 接続箇所
55 隙間
56 支持部分
64 金属板
65a 第1レジストパターン
65b 第2レジストパターン
65c 第1レジスト膜
65d 第2レジスト膜
70 加工装置
72 搬送ローラー
73 分離装置
90 蒸着装置
92 有機EL基板
98 蒸着材料
Claims (28)
- 一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された蒸着マスクの製造方法であって、
金属板を準備する工程と、
前記金属板を、一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された複数の蒸着マスク部分と、前記複数の蒸着マスク部分を囲むとともに前記複数の蒸着マスク部分の前記短辺に部分的に接続されている支持部分と、を備える中間製品に加工する加工工程と、
前記蒸着マスク部分を前記支持部分から分離して前記蒸着マスクを得る分離工程と、を備え、
前記中間製品において、前記蒸着マスク部分の前記長辺は、前記支持部分に接続されていない、蒸着マスクの製造方法。 - 一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された蒸着マスクの製造方法であって、
金属板を準備する工程と、
前記金属板を、一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された複数の蒸着マスク部分と、前記複数の蒸着マスク部分を囲むとともに前記複数の蒸着マスク部分に部分的に接続されている支持部分と、を備える中間製品に加工する加工工程と、
前記蒸着マスク部分を前記支持部分から分離して前記蒸着マスクを得る分離工程と、を備え、
前記中間製品において、前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率が、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率よりも小さい、蒸着マスクの製造方法。 - 前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の幅の総和を前記長辺の長さで割ることにより算出され、
前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の幅の総和を前記短辺の長さで割ることにより算出される、請求項2に記載の蒸着マスクの製造方法。 - 前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の個数を前記長辺の長さで割ることにより算出され、
前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の個数を前記短辺の長さで割ることにより算出される、請求項2に記載の蒸着マスクの製造方法。 - 前記中間製品において、前記蒸着マスク部分の前記長辺のうち、前記中間製品の幅方向に沿って前記長辺を見た場合に前記貫通孔と重なる領域は、前記支持部分に接続されていない、請求項2に記載の蒸着マスクの製造方法。
- 前記中間製品において、前記蒸着マスク部分の前記短辺は、前記支持部分に向かって突出し、且つ前記支持部分に接続されている複数の凸部を含む、請求項1乃至5のいずれか一項に記載の蒸着マスクの製造方法。
- 前記中間製品において、前記複数の蒸着マスク部分は、前記長辺に交差する方向に並んでおり、
隣り合う2つの前記蒸着マスク部分の前記長辺の間には、前記支持部分が存在しない、請求項1乃至5のいずれか一項に記載の蒸着マスクの製造方法。 - 前記加工工程は、前記金属板をエッチングして、前記貫通孔、及び、前記蒸着マスク部分の前記長辺と前記支持部分との間の隙間を形成する工程を含む、請求項1乃至5のいずれか一項に記載の蒸着マスクの製造方法。
- 前記加工工程において、前記蒸着マスク部分の前記長辺の方向に沿って前記金属板を搬送しながら前記金属板を加工する、請求項1乃至5のいずれか一項に記載の蒸着マスクの製造方法。
- 前記分離工程において、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所を破断させることによって、前記蒸着マスク部分を前記支持部分から分離する、請求項1乃至5のいずれか一項に記載の蒸着マスクの製造方法。
- 前記金属板の厚みが、50μm以下である、請求項1乃至5のいずれか一項に記載の蒸着マスクの製造方法。
- 一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された蒸着マスクが割り付けられた、金属製の板状の中間製品であって、
一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された蒸着マスク部分と、
前記蒸着マスク部分を囲むとともに前記蒸着マスク部分の前記短辺に部分的に接続されている支持部分と、を備え、
前記蒸着マスク部分の前記長辺は、前記支持部分に接続されていない、中間製品。 - 一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された蒸着マスクが割り付けられた、金属製の板状の中間製品であって、
一対の長辺及び一対の短辺を含むとともに複数の貫通孔が形成された蒸着マスク部分と、
前記蒸着マスク部分を囲むとともに前記蒸着マスク部分に部分的に接続されている支持部分と、を備え、
前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率が、前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率よりも小さい、中間製品。 - 前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の幅の総和を前記長辺の長さで割ることにより算出され、
前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の幅の総和を前記短辺の長さで割ることにより算出される、請求項13に記載の中間製品。 - 前記蒸着マスク部分の前記長辺のうち前記支持部分に接続されている箇所の比率は、前記長辺のうち前記支持部分に接続されている部分の個数を前記長辺の長さで割ることにより算出され、
前記蒸着マスク部分の前記短辺のうち前記支持部分に接続されている箇所の比率は、前記短辺のうち前記支持部分に接続されている部分の個数を前記短辺の長さで割ることにより算出される、請求項13に記載の中間製品。 - 前記蒸着マスク部分の前記長辺のうち、前記中間製品の幅方向に沿って前記長辺を見た場合に前記貫通孔と重なる領域は、前記支持部分に接続されていない、請求項13に記載の中間製品。
- 前記蒸着マスク部分の前記短辺は、前記支持部分に向かって突出し、且つ前記支持部分に接続されている複数の凸部を含む、請求項12乃至16のいずれか一項に記載の中間製品。
- 前記蒸着マスク部分及び前記支持部分の厚みが、50μm以下である、請求項12乃至16のいずれか一項に記載の中間製品。
- 前記複数の蒸着マスク部分は、前記長辺に交差する方向に並んでおり、
隣り合う2つの前記蒸着マスク部分の前記長辺の間には、前記支持部分が存在しない、請求項12乃至16のいずれか一項に記載の中間製品。 - 蒸着マスクであって、
一対の長辺及び一対の短辺を含む、金属製の板状の基材と、
前記基材に形成された複数の貫通孔と、を備え、
前記基材の前記短辺には部分的に破断面が存在し、一方、前記基材の前記長辺には破断面が存在しない、蒸着マスク。 - 蒸着マスクであって、
一対の長辺及び一対の短辺を含む、金属製の板状の基材と、
前記基材に形成された複数の貫通孔と、を備え、
前記基材の前記長辺における破断面の比率が、前記基材の前記短辺における破断面の比率よりも小さい、蒸着マスク。 - 前記基材の前記長辺における破断面の比率は、前記長辺に存在する前記破断面の幅の総和を前記長辺の長さで割ることにより算出され、
前記基材の前記短辺における破断面の比率は、前記短辺に存在する前記破断面の幅の総和を前記短辺の長さで割ることにより算出される、請求項21に記載の蒸着マスク。 - 前記基材の前記長辺における破断面の比率は、前記長辺に存在する前記破断面の個数を前記長辺の長さで割ることにより算出され、
前記基材の前記短辺における破断面の比率は、前記短辺に存在する前記破断面の個数を前記短辺の長さで割ることにより算出される、請求項21に記載の蒸着マスク。 - 前記破断面は、前記蒸着マスクの幅方向に沿って前記長辺を見た場合に前記貫通孔と重なる領域には存在しない、請求項21に記載の蒸着マスク。
- 前記基材の前記短辺は、外方に突出するとともに前記破断面を有する複数の凸部を含む、請求項20乃至24のいずれか一項に記載の蒸着マスク。
- 前記基材の前記長辺から前記貫通孔までの、前記基材の面方向における最短距離が、50μm以下である、請求項20乃至24のいずれか一項に記載の蒸着マスク。
- 前記基材は、前記貫通孔を通った蒸着材料が付着する基板に対面する第1面と、前記第1面の反対側に位置する第2面と、を有し、
前記基材の前記長辺は、前記第1面と交わる部分において最も外側に突出した断面形状を有する、請求項20乃至24のいずれか一項に記載の蒸着マスク。 - 前記基材の厚みが、50μm以下である、請求項20乃至24のいずれか一項に記載の蒸着マスク。
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TWI819236B (zh) * | 2019-09-06 | 2023-10-21 | 日商凸版印刷股份有限公司 | 蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
TWI783447B (zh) | 2022-11-11 |
CN107916396A (zh) | 2018-04-17 |
KR102424309B1 (ko) | 2022-07-25 |
TWI778977B (zh) | 2022-10-01 |
KR20220104846A (ko) | 2022-07-26 |
US20210214837A1 (en) | 2021-07-15 |
EP3524710A4 (en) | 2020-06-10 |
US20200056279A1 (en) | 2020-02-20 |
JP2022191309A (ja) | 2022-12-27 |
EP3524710B8 (en) | 2024-01-24 |
US11313026B2 (en) | 2022-04-26 |
TW202129033A (zh) | 2021-08-01 |
EP3524710B1 (en) | 2023-12-20 |
US20190256965A1 (en) | 2019-08-22 |
JP7301497B2 (ja) | 2023-07-03 |
CN107916396B (zh) | 2020-07-07 |
US20220205077A1 (en) | 2022-06-30 |
EP3524710A1 (en) | 2019-08-14 |
TW201816148A (zh) | 2018-05-01 |
JPWO2018066325A1 (ja) | 2019-07-18 |
KR20190060760A (ko) | 2019-06-03 |
CN207313683U (zh) | 2018-05-04 |
US11814719B2 (en) | 2023-11-14 |
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