WO2018043423A1 - 照明光学系、リソグラフィ装置、及び物品製造方法 - Google Patents

照明光学系、リソグラフィ装置、及び物品製造方法 Download PDF

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Publication number
WO2018043423A1
WO2018043423A1 PCT/JP2017/030779 JP2017030779W WO2018043423A1 WO 2018043423 A1 WO2018043423 A1 WO 2018043423A1 JP 2017030779 W JP2017030779 W JP 2017030779W WO 2018043423 A1 WO2018043423 A1 WO 2018043423A1
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WO
WIPO (PCT)
Prior art keywords
optical
optical system
light
illuminance
integrator
Prior art date
Application number
PCT/JP2017/030779
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English (en)
French (fr)
Japanese (ja)
Inventor
広美 須田
Original Assignee
キヤノン株式会社
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Application filed by キヤノン株式会社 filed Critical キヤノン株式会社
Priority to KR1020197008164A priority Critical patent/KR102212855B1/ko
Priority to CN201780051936.9A priority patent/CN109643069B/zh
Publication of WO2018043423A1 publication Critical patent/WO2018043423A1/ja

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving

Definitions

  • the present invention relates to an illumination optical system, a lithography apparatus, and an article manufacturing method.
  • an illumination optical system including a rod-type optical integrator.
  • the illumination light from the secondary light source formed according to the number of internal reflections in the rod can be overlapped at the rod exit end to make the illuminance distribution uniform on the rod exit surface. it can.
  • Patent Document 1 has a configuration in which a plurality of light amount adjustment units provided corresponding to a plurality of secondary light source images are arranged at positions that are optically conjugate with the exit surface of the rod-type optical integrator. Is disclosed.
  • the illuminance distribution correction amount on the illuminated surface is fixed. It becomes. Therefore, it has been difficult to correct illuminance non-uniformity (hereinafter referred to as “illuminance unevenness”) unique to each machine, which occurs due to the film formation state of the antireflection film, assembly accuracy, and the like. Further, when the optical element deteriorates after long-term use of the apparatus and the illuminance unevenness changes with time, it is necessary to replace the adjustment unit as appropriate.
  • an illumination optical system that illuminates an illuminated surface using light from a light source, the optical integrator disposed between the light source and the illuminated surface, and the optical integrator And an optical filter having an adjustment unit that adjusts the intensity of light incident on the optical integrator.
  • the adjustment unit is provided at least in the first region, and the position of the adjustment unit in a direction perpendicular to the optical axis of the illumination optical system Illumination optical system and changes the illuminance on the illuminated surface is provided by changing.
  • the figure which shows the structure of exposure apparatus The schematic diagram which shows the relationship between an adjustment part and a secondary light source.
  • emission end surface The figure which shows the example of arrangement
  • action of an optical filter The figure explaining the correction method of illumination intensity nonuniformity.
  • the flowchart which shows the correction
  • action of an optical filter The figure explaining the effect
  • correction method of illumination intensity nonuniformity The figure explaining the correction method of illumination intensity nonuniformity.
  • action of an optical filter The figure explaining the effect
  • action of an optical filter The figure explaining the effect
  • FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus 100 according to the present embodiment.
  • the exposure apparatus 100 is used, for example, in a lithography process in a semiconductor device manufacturing process, and exposes (transfers) an image of a pattern formed on a reticle R (mask) onto a wafer W that is a substrate. It is an exposure apparatus.
  • the Z axis is taken along the normal direction of the wafer W, and the X axis and the Y axis are taken in directions perpendicular to each other in a plane parallel to the wafer W surface.
  • the exposure apparatus 100 includes an illumination optical system 101, a reticle stage 102, a projection optical system 103, a wafer stage 104, and a control unit 105.
  • the illumination optical system 101 adjusts light (light flux) from the discharge lamp 1 that is a light source to illuminate the reticle R that is an illuminated area.
  • the discharge lamp 1 can be, for example, an ultrahigh pressure mercury lamp that supplies light such as i-line (wavelength 365 nm).
  • a KrF excimer laser that supplies light with a wavelength of 248 nm, an ArF excimer laser that supplies light with a wavelength of 193 nm, and an F2 laser that supplies light with a wavelength of 157 nm may be used.
  • a charged particle beam such as an X-ray or an electron beam may be used as the light source.
  • the reticle R is an original plate made of, for example, quartz glass on which a pattern to be transferred (for example, a circuit pattern) is formed on the wafer W.
  • the reticle stage 102 holds the reticle R and is movable in the X and Y axis directions.
  • the projection optical system 103 projects the light that has passed through the reticle R onto the wafer W at a predetermined magnification.
  • the wafer W is a substrate made of, for example, single crystal silicon and having a resist (photosensitive material) coated on the surface thereof.
  • the wafer stage 104 holds the wafer W via a wafer chuck (not shown) and is movable in the respective axial directions of X, Y, and Z (which may include ⁇ x, ⁇ y, and ⁇ z that are the respective rotation directions). .
  • the wafer stage 104 can be driven by a wafer stage drive unit 114.
  • the illumination optical system 101 includes an elliptical mirror 2, a first relay optical system 3, an optical integrator 4, and a second relay optical system 5 in order from the discharge lamp 1 toward the reticle R that is an illuminated area.
  • the elliptical mirror 2 is a condensing mirror that condenses the light (light flux) emitted from the discharge lamp 1 at the second focal position F2.
  • the light emitting part in the bulb part of the discharge lamp 1 is arranged in the vicinity of the first focal point F1 of the elliptical mirror 2, for example.
  • the first relay optical system 3 as an imaging optical system includes a lens front group 3a (first lens) composed of one or more lenses and a lens rear group 3b (second lens) composed of one or more lenses. Including.
  • the front lens group 3a converts light from the light source into parallel light.
  • the rear lens group 3 b condenses the light that has been converted into parallel light by the rear lens group 3 a onto the incident end face 4 a of the optical integrator 4.
  • the second focal position F2 and the incident end face 4a of the optical integrator 4 are optically conjugate.
  • the optical axis of the illumination optical system 101 particularly the optical system including the first relay optical system 3, the optical integrator 4, and the second relay optical system 5, is set to the Z-axis direction.
  • the optical integrator 4 is a rod-type optical integrator that reflects incident light on the inner surface and forms a plurality of secondary light source images corresponding to the number of reflections.
  • the shape of the optical integrator 4 is, for example, a quadrangular prism. That is, the shape of the incident end surface and the exit end surface parallel to the XY plane of the optical integrator 4 is a rectangle similar to the illuminated surface. However, such a shape is merely an example, and does not hinder the application of a member having the same function as the optical integrator 4.
  • the optical integrator 4 may be composed of a hollow rod that forms a reflective surface inside.
  • the cross-sectional shape of the incident end surface 4a and the exit end surface 4b of the optical integrator 4 on the XY plane may be a polygon other than a quadrangle.
  • an optical filter 6 is arranged in the vicinity of the reticle R, that is, the conjugate plane S1 conjugate with the wafer W, perpendicular to the optical axis.
  • the optical filter 6 is configured to be movable two-dimensionally along the XY plane, and the movement is performed by, for example, the filter driving unit 7.
  • the optical filter 6 is included in the first relay optical system 3 and can be disposed between the lens front group 3a and the lens rear group 3b.
  • the optical filter 6 has a plurality of adjustment units that adjust the intensity of light incident on the optical integrator 4 provided corresponding to the number of secondary light source images formed by the optical integrator 4. The optical action of the optical filter 6 will be described in detail later.
  • the rear lens group 3b is disposed at a position away from the position of the virtual image plane S2 of the secondary light source formed by the optical integrator 4 by a focal length, and the illumination light emitted almost parallel to the optical axis from the optical filter 6 is The light is once condensed on the virtual image plane S2.
  • the incident end face 4a of the optical integrator 4 is disposed in the vicinity of the virtual image plane S2.
  • the illumination light collected by the rear lens group 3b is reflected a plurality of times on the inner surface of the optical integrator 4 and emitted.
  • Illumination light emitted from the optical integrator 4 is emitted as if traveling from a virtual image of a discrete secondary light source corresponding to the number of reflections. For this reason, the angle of the illumination light emitted from the optical integrator 4 corresponds to the emission angle of the illumination light from the virtual image of the secondary light source arranged on the virtual image plane S2.
  • the exit end surface 4b of the optical integrator 4 is superimposed and illuminated uniformly by a plurality of light source images arranged on the virtual image plane S2.
  • the light emitted from the emission end surface 4b of the optical integrator 4 is transmitted through the second relay optical system 5, and then illuminates the reticle R, which is the illuminated surface.
  • the second relay optical system 5 includes a lens front group 5a composed of a single lens or a plurality of lenses for converting light from the emission end face 4b of the optical integrator 4 into parallel light.
  • the lens front group 5a is configured to be movable in the optical axis direction (Z-axis direction) of the second relay optical system 5.
  • the second relay optical system 5 further includes a lens rear group 5b composed of a single lens or a plurality of lenses for condensing the light that has been converted into parallel light by the lens front group 5a onto the surface to be illuminated.
  • the lens front unit 5a is moved by the lens driving unit 51. By moving the lens front group 5a in the optical axis direction, the distortion can be changed while substantially not changing the focal length. With this action, the peripheral illuminance can be increased or decreased by the movement of the lens front group 5a.
  • the exit end surface 4b of the optical integrator 4 is disposed at the front focal position of the lens front group 5a, and the exit end surface 4b of the optical integrator 4 is optically conjugate with the reticle R that is the illuminated surface. It has become. Strictly speaking, the position of the injection end face 4b may be slightly shifted from the conjugate in order to avoid the transfer of foreign matter on the injection end face 4b of the optical integrator 4. Then, the light emitted from the reticle R, that is, the image of the mask pattern, is transferred onto the wafer W via the projection optical system 103.
  • the illuminance distribution measuring unit 115 measures the illuminance distribution on the reticle R that is the surface to be illuminated.
  • the control unit 105 controls the discharge lamp 1, the filter driving unit 7, the lens driving unit 51, the wafer stage driving unit 114, and the illuminance distribution measuring unit 115.
  • the control unit 105 can include a storage unit 105a that stores various data necessary for control.
  • FIG. 2 is a diagram schematically illustrating a relationship between a plurality of adjustment units provided on the optical filter and a plurality of secondary light sources formed by the optical integrator 4.
  • FIG. 2 shows an optical path of illumination light emitted from the optical filter 6 in parallel to the optical axis.
  • the adjustment unit 60 on the optical axis provided on the optical filter 6 adjusts the intensity of the light beam from the secondary light source 40 that is not reflected by the inner surface of the optical integrator 4.
  • a pair of adjustment units 61 a and 61 b adjacent to both outer sides of the adjustment unit 60 adjust the intensity of the light beam from the secondary light source images 41 a and 41 b that are reflected once by the inner surface of the optical integrator 4.
  • a pair of adjustment units 62 a and 62 b adjacent to both outer sides of the adjustment units 61 a and 61 b adjust the intensity of the light beam from the secondary light source images 42 a and 42 b reflected twice by the inner surface of the optical integrator 4. According to such a configuration, the transmittance can be controlled independently for each of the light beams of the plurality of secondary light sources formed by the optical integrator 4.
  • the adjusting units 60, 61a, 61b, 62a, 62b are disposed in the vicinity of the conjugate surface S1 conjugate with the emission end surface 4b of the optical integrator 4. Accordingly, the shape of one adjustment unit corresponds to the illumination area on the reticle R or the wafer W in FIG. 1, and the transmittance distribution of the adjustment units 60, 61 a, 61 b, 62 a, 62 b is on the wafer W. It is reflected in the illuminance distribution of the illumination area.
  • FIG. 3A is a diagram for explaining the imaging relationship between each adjustment unit in the optical filter 6 and the exit end face 4b of the optical integrator 4.
  • FIG. 4 the light beam from the adjacent secondary light source is inverted. For this reason, when the direction of the image formed on the exit end face 4b of the optical integrator 4 is “F”, the images of the adjacent adjustment units are opposite to each other and are in a mirror image relationship with each other.
  • FIG. 3B is a schematic view of the optical filter 6 disposed in the vicinity of the conjugate plane S1 as viewed from the incident side.
  • a pattern filter or a light shielding member
  • the plurality of pattern filters constituting the plurality of adjustment units are arranged at predetermined positions on the optical filter corresponding to the mirror image relationship in the plurality of secondary light source images of the optical integrator 4.
  • the optical filter 6 includes a plurality of first regions A and B and a plurality of second regions that are regions other than the first region.
  • the plurality of first areas A and B are areas in which images in the same direction are formed on the emission end face 4 b of the optical integrator 4.
  • the plurality of second regions are regions where an image having a mirror image relationship with the image of the first region is formed on the emission end face 4 b of the optical integrator 4.
  • rectangular pattern filters 6A and 6B are arranged on the surface of the optical filter 6 in the plurality of first regions A and B, corresponding to the plurality of secondary light source images of the optical integrator 4, respectively. Yes. Note that the pattern filters 6A and 6B may be arranged in at least a part of the plurality of first regions A and B instead of all of the first regions A and B.
  • each pattern filter portion has an effect as shown in FIGS. 4A and 4B. ing.
  • FIG. 4C representing the sum of FIGS. 4A and 4B, approximately.
  • an optical filter having an effect of increasing the illuminance in the vicinity as in the present embodiment is effective in correcting the illuminance distribution.
  • the light beam incident on the optical integrator 4 is adjusted so as to have an illuminance distribution symmetric with respect to the optical axis.
  • the effective light source distribution on the illuminated surface is symmetric with respect to the chief ray, so that no image shift occurs with respect to defocusing. Thereby, exposure with good telecentricity can be realized.
  • the illumination light incident on the optical integrator 4 has an asymmetric illuminance distribution with respect to the optical axis, the symmetry of the effective light source distribution is lost, and the image performance is affected in the form of a telecentricity shift.
  • the telecentricity shift hardly occurs.
  • two types of pattern filters 6A and 6B are used as the adjustment unit.
  • one type of pattern is approximately proportional to the square of the image height. It is also possible to create an illuminance distribution.
  • the illuminance unevenness in FIG. 5A is decomposed into an inclined illuminance unevenness as shown in FIG. 5B and an illuminance unevenness in which the illuminance decreases as it goes to the periphery as shown in FIG. 5C. can do. These can be separated from each other by calculating the average illuminance and inclination component by image height from the illuminance distribution.
  • the optical filter 6 of this embodiment has an effect of increasing the illuminance at the peripheral portion in proportion to the square of the image height.
  • the incident end face 4a of the optical integrator 4 is equivalent to the illuminated surface and is a normalized XY coordinate system
  • a is a constant.
  • the pattern filters 6A and 6B of the optical filter 6 are disposed in at least a part of the plurality of first regions A and B in which images in the same direction are formed on the exit end face 4b of the optical integrator 4.
  • the optical filter 6 is movable in a direction along the plurality of first regions A and B and the plurality of second regions which are other regions, that is, a direction along the XY plane. That is, it is possible to change the position of the optical filter 6 in a direction (X direction or Y direction) perpendicular to the optical axis (Z axis) of the illumination optical system.
  • the optical filter 6 is moved in the direction along the XY plane, the effects of the illuminance distribution change on the illuminated surface provided by the pattern filters 6A and 6B are not canceled out.
  • FIG. 6 is a flowchart showing a correction procedure for inclined uneven illuminance.
  • the control unit 105 calculates illuminance unevenness on the illuminated surface based on the illuminance distribution data measured by the illuminance distribution measuring unit 115 (illuminance unevenness measurement 1). If the maximum value of the illuminance value on the surface to be illuminated is Smax and the minimum value is Smin, the illuminance unevenness S is calculated by the following equation, for example.
  • control unit 105 moves the optical filter 6 by a predetermined distance ⁇ in the X direction in S602, and measures illuminance unevenness on the illuminated surface in S603 (illuminance unevenness measurement 2).
  • control unit 105 moves the optical filter 6 by a predetermined distance ⁇ in the Y direction in S604, and measures the illuminance unevenness on the illuminated surface in S605 (illuminance unevenness measurement 3).
  • control unit 105 calculates the amount of change in illuminance unevenness from the results of the illuminance unevenness measurements 1, 2, and 3, and stores the change in the storage unit 105a. This change amount corresponds to the inclination of the above-described inclined illuminance distribution.
  • control unit 105 calculates the movement direction and the movement amount of the optical filter 6 based on the change amount calculated in S606. Then, the control unit 105 causes the filter driving unit 7 to move the optical filter 6 by the calculated movement amount in the calculated direction.
  • the control unit 105 again measures the illuminance unevenness on the surface to be illuminated (illuminance unevenness measurement 4), and confirms whether the illuminance unevenness is within a predetermined allowable range in S610. If the illuminance unevenness is within the allowable range, the process ends. On the other hand, if the illuminance unevenness is not within the allowable range, the process proceeds to S611, the result of the illuminance unevenness measurement 4 is fed back, and the process returns to S607 to recalculate the moving direction and the moving amount of the optical filter 6.
  • the peripheral illuminance correction amount is adjusted.
  • the second relay optical system 5 has a configuration in which the distortion is changed while the focal length is not substantially changed by moving the lens front group 5a in the optical axis direction. Thereby, the peripheral illuminance can be increased or decreased by the movement of the lens front group 5a.
  • the control unit 105 obtains the amount of change in illuminance at the outermost peripheral portion of the illuminated surface when the illuminance distribution measurement unit 115 moves the lens front group 5a by a predetermined distance ⁇ in the optical axis direction. Is stored in the storage unit 105a (illuminance unevenness measurement 1). Note that S701 may be performed in advance by simulation or the like.
  • the control unit 105 calculates the amount of movement of the lens front group 5a in the optical axis direction based on the amount of change.
  • step S ⁇ b> 703 the control unit 105 causes the lens driving unit 51 to move the lens front group 5 a in the optical axis direction by the calculated movement amount.
  • the control unit 105 again obtains the amount of change in illuminance at the outermost peripheral portion of the illuminated surface when the lens front group 5a is moved by a predetermined distance ⁇ in the optical axis direction (illuminance unevenness measurement 2), and S705. Then, it is confirmed whether the fluctuation amount is within a predetermined allowable range. If the fluctuation amount is within the allowable range, the process ends. On the other hand, if the fluctuation amount is not within the allowable range, the process proceeds to S706, the result of the illuminance unevenness measurement 2 is fed back, the process returns to S703, and the movement amount of the optical filter 6 is recalculated.
  • control unit 105 feedback-controls the movement amount of the optical filter 6 so that the illuminance unevenness calculated from the illuminance distribution measured by the illuminance distribution measurement unit 115 falls within the allowable range.
  • control procedure of FIG. 6 and the control procedure of FIG. 7 performed by the control unit 105 may be executed in series along a time series, or may be executed in parallel.
  • each element can be driven to the optimum position by calling the execution result from the storage unit 105a.
  • the procedures as shown in FIGS. 6 and 7 can be omitted, and the correction of the inclined uneven illuminance and the concentric uneven illuminance (illuminance unevenness symmetric to the optical axis) can be performed quickly.
  • the control procedure shown in FIGS. 6 and 7 may be executed again to correct the inclined illuminance unevenness and the concentric illuminance unevenness (illuminance unevenness symmetric to the optical axis). .
  • an optical filter is arranged in the vicinity of an incident surface of an optical integrator in which a plurality of microlenses are two-dimensionally arranged at a predetermined pitch.
  • the optical filter has a light amount adjustment unit that can adjust the amount of transmitted light in a plurality of regions respectively corresponding to a plurality of microlenses constituting the optical integrator. Even with such a configuration, it is possible to control illuminance unevenness by moving the optical filter along the XY plane.
  • the rod-type optical integrator according to the present embodiment is lower in cost.
  • the arrangement position of each adjustment unit is determined by utilizing the imaging relationship as shown in FIG. 3A.
  • the plurality of adjustment units are arranged so that the direction of the image of each adjustment unit formed on the exit end face of the rod-type optical integrator is the same by the light transmitted through each of the plurality of adjustment units. Placed on top. Thereby, illuminance unevenness control is possible.
  • FIG. 3C is a schematic view of the optical filter 6 according to the present embodiment as viewed from the incident side.
  • rectangular pattern filters 6 ⁇ / b> C are arranged in a plurality of first regions C corresponding to a plurality of secondary light source images of the optical integrator 4, and a rectangular pattern filter 6 ⁇ / b> D is a plurality of rectangular pattern filters 6 ⁇ / b> D.
  • the pattern filters 6C and 6D may be arranged in at least a part of the plurality of first regions C and the plurality of second regions D, respectively.
  • the plurality of first regions C are regions in which images in the same direction are formed on the emission end surface 4 b of the optical integrator 4.
  • the plurality of second regions D are regions where images having a mirror image relationship with the images of the plurality of first regions C are formed on the emission end face 4 b of the optical integrator 4.
  • the pattern filter 6C has the effect of increasing the illuminance at the peripheral portion of the illuminated surface approximately in proportion to the square of the image height as shown in FIG. 8A.
  • the pattern filter 6D has the opposite characteristic, that is, the effect of lowering the illuminance at the peripheral portion approximately in proportion to the square of the image height as shown in FIG. 8B.
  • the combination of the pattern filters 6C and 6D is configured to cancel the effects of the illuminance distribution change.
  • the incident end surface 4a of the optical integrator 4 is equivalent to an illuminated surface and is a normalized XY coordinate system
  • a is a constant.
  • the configuration of the adjustment unit as in this embodiment is effective for correcting the illuminance distribution.
  • the pattern filter 6C in the present embodiment has an effect that the illuminance distribution changes approximately in proportion to the cube of the image height as shown in FIG. 10A.
  • the pattern filter 6D has the opposite characteristic, that is, an effect that the illuminance distribution changes approximately in proportion to the cube of the image height as shown in FIG. 10B.
  • the combination of the pattern filters 6C and 6D is configured to cancel the effects of the illuminance distribution change.
  • a is a constant.
  • the secondary shape illuminance distribution as shown in FIG. 11A can be corrected to be flat as shown in FIG. 11B.
  • the configuration of the adjustment unit as in this embodiment is effective for illuminance distribution correction. Even if the illuminance distribution to be corrected is a third-order or higher order shape, illuminance unevenness correction can be performed by appropriately setting the transmittance distribution of the pattern filter.
  • the article manufacturing method according to the embodiment of the present invention is suitable for manufacturing an article such as a micro device such as a semiconductor device or an element having a fine structure.
  • the article manufacturing method of this embodiment uses a lithography apparatus (such as an exposure apparatus, an imprint apparatus, or a drawing apparatus) to transfer an original pattern to a substrate, and processes the substrate on which the pattern has been transferred in this process. Including the step of. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like).
  • the article manufacturing method of this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2017/030779 2016-08-30 2017-08-28 照明光学系、リソグラフィ装置、及び物品製造方法 WO2018043423A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711879B (zh) * 2018-05-01 2020-12-01 日商佳能股份有限公司 控制裝置、微影蝕刻設備和物件的製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700960B (zh) * 2019-05-29 2020-08-01 財團法人國家實驗研究院 光源調控方法、光源系統以及電腦程式產品

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319321A (ja) * 1997-03-14 1998-12-04 Nikon Corp 照明装置及び該照明装置を用いた投影露光装置並びに該投影露光装置を用いたデバイスの製造方法及び該投影露光装置の製造方法
WO1999036832A1 (fr) * 1998-01-19 1999-07-22 Nikon Corporation Dispositif d'eclairement et appareil de sensibilisation
WO2000057459A1 (fr) * 1999-03-24 2000-09-28 Nikon Corporation Méthode d'exposition et dispositif correspondant
JP2001135560A (ja) * 1999-11-04 2001-05-18 Nikon Corp 照明光学装置、該照明光学装置を備えた露光装置、および該露光装置を用いたマイクロデバイス製造方法
JP2001135564A (ja) * 1999-11-05 2001-05-18 Canon Inc 投影露光装置
US20010046039A1 (en) * 1999-03-16 2001-11-29 Nikon Corporation Illumination apparatus, exposure apparatus and exposure method
US20080111983A1 (en) * 2005-01-14 2008-05-15 Carl Zeiss Smt Ag Illumination System for a Microlithographic Projection Exposure Apparatus
JP2010097975A (ja) * 2008-10-14 2010-04-30 Nikon Corp 補正ユニット、照明光学系、露光装置、およびデバイス製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3440458B2 (ja) * 1993-06-18 2003-08-25 株式会社ニコン 照明装置、パターン投影方法及び半導体素子の製造方法
JP3259657B2 (ja) * 1997-04-30 2002-02-25 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
JP2000269114A (ja) 1999-03-16 2000-09-29 Nikon Corp 照明装置、露光装置及び露光方法
TW594847B (en) * 2001-07-27 2004-06-21 Canon Kk Illumination system, projection exposure apparatus and method for manufacturing a device provided with a pattern to be exposed

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319321A (ja) * 1997-03-14 1998-12-04 Nikon Corp 照明装置及び該照明装置を用いた投影露光装置並びに該投影露光装置を用いたデバイスの製造方法及び該投影露光装置の製造方法
WO1999036832A1 (fr) * 1998-01-19 1999-07-22 Nikon Corporation Dispositif d'eclairement et appareil de sensibilisation
US20010046039A1 (en) * 1999-03-16 2001-11-29 Nikon Corporation Illumination apparatus, exposure apparatus and exposure method
WO2000057459A1 (fr) * 1999-03-24 2000-09-28 Nikon Corporation Méthode d'exposition et dispositif correspondant
JP2001135560A (ja) * 1999-11-04 2001-05-18 Nikon Corp 照明光学装置、該照明光学装置を備えた露光装置、および該露光装置を用いたマイクロデバイス製造方法
JP2001135564A (ja) * 1999-11-05 2001-05-18 Canon Inc 投影露光装置
US20080111983A1 (en) * 2005-01-14 2008-05-15 Carl Zeiss Smt Ag Illumination System for a Microlithographic Projection Exposure Apparatus
JP2010097975A (ja) * 2008-10-14 2010-04-30 Nikon Corp 補正ユニット、照明光学系、露光装置、およびデバイス製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711879B (zh) * 2018-05-01 2020-12-01 日商佳能股份有限公司 控制裝置、微影蝕刻設備和物件的製造方法

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KR102212855B1 (ko) 2021-02-05
TW201820045A (zh) 2018-06-01
KR20190040294A (ko) 2019-04-17
JP2018036425A (ja) 2018-03-08
CN109643069B (zh) 2021-07-27

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