WO2018037913A1 - Composition pare-lumière, film pare-lumière, élément d'imagerie solide, filtre couleur, et dispositif d'affichage à cristaux liquides - Google Patents

Composition pare-lumière, film pare-lumière, élément d'imagerie solide, filtre couleur, et dispositif d'affichage à cristaux liquides Download PDF

Info

Publication number
WO2018037913A1
WO2018037913A1 PCT/JP2017/028778 JP2017028778W WO2018037913A1 WO 2018037913 A1 WO2018037913 A1 WO 2018037913A1 JP 2017028778 W JP2017028778 W JP 2017028778W WO 2018037913 A1 WO2018037913 A1 WO 2018037913A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
shielding
group
shielding composition
shielding film
Prior art date
Application number
PCT/JP2017/028778
Other languages
English (en)
Japanese (ja)
Inventor
金子　祐士
Original Assignee
富士フイルム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士フイルム株式会社 filed Critical 富士フイルム株式会社
Priority to JP2018535589A priority Critical patent/JP6694513B2/ja
Publication of WO2018037913A1 publication Critical patent/WO2018037913A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/32—Compounds containing nitrogen bound to oxygen
    • C08K5/33—Oximes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only

Definitions

  • the present invention relates to a light-shielding composition, a light-shielding film, a solid-state imaging device, a color filter, and a liquid crystal display device.
  • a light shielding film is provided for the purpose of preventing noise generation and improving image quality.
  • portable terminals of electronic devices such as mobile phones and PDAs (Personal Digital Assistants) are equipped with small and thin imaging units.
  • Such an imaging unit generally includes a solid-state imaging device such as a CCD (Charge Coupled Device) image sensor and a CMOS (Complementary Metal-Oxide Semiconductor) image sensor, a lens for forming a subject image on the solid-state imaging device, It has.
  • Patent Document 1 contains a predetermined titanium oxynitride and a curable binder, and the surface of the titanium oxynitride particles has an acid.
  • a black resin composition for display elements is described, which is obtained by coating an inorganic compound and / or an organic compound in a range of 0.01 to 30% by mass with respect to titanium nitride.
  • composition for display elements described in Patent Document 1 (hereinafter simply referred to as “composition” in this paragraph), the heat resistance required for the light-shielding composition, And it discovered that there existed a problem which does not have low reflectivity (it intends the state where the light reflectance mentioned later is low). Moreover, when the light-shielding film obtained by applying and curing the above composition on a substrate was studied, it was also found that there was a problem that the light-shielding film had no adhesion to the substrate. .
  • heat resistance means that when a light-shielding composition layer formed using a light-shielding composition is heated, the light transmittance hardly increases before and after heating (the rate of increase is low). Specifically, it means heat resistance measured by the method described in the examples.
  • the present invention can produce a light-shielding film having excellent adhesion to the substrate, and can form a light-shielding film having excellent heat resistance and excellent low reflectance (hereinafter referred to as “effects of the present invention”). It is also referred to as “having a light-shielding composition”.
  • Another object of the present invention is to provide a light-shielding film, a solid-state imaging device, a color filter, and a liquid crystal display device.
  • a particle containing a nitride of a metal atom and at least one selected from the group consisting of a polymerizable compound and a resin, which is obtained by X-ray photoelectron spectroscopy, on the surface of the particle The light-shielding composition, wherein the content atom number ratio of the metal atom content to the silicon atom content is 1.0 or less.
  • the diffraction angle 2 ⁇ of the peak derived from the (200) plane of the particle when the metal atom nitride is titanium nitride and the CuK ⁇ ray is an X-ray source is 42.5 to 42.8 °.
  • the light shielding composition which can produce the light shielding film which has the outstanding adhesiveness with a board
  • a numerical range expressed using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.
  • group (atomic group) in this specification the description which does not describe substitution and unsubstituted includes the thing which contains a substituent with the thing which does not contain a substituent.
  • the “alkyl group” includes not only an alkyl group not containing a substituent (unsubstituted alkyl group) but also an alkyl group containing a substituent (substituted alkyl group).
  • active light or “radiation” in the present specification means, for example, an emission line spectrum of an mercury lamp, an excimer laser, far ultraviolet rays, extreme ultraviolet rays (EUV), X-rays, and electron beams. To do. In the present specification, light means actinic rays and radiation.
  • exposure means not only exposure by mercury lamp, excimer laser, deep ultraviolet ray, X-ray, EUV, etc., but also drawing by particle beams such as electron beam and ion beam, unless otherwise specified. Include.
  • “(meth) acrylate” represents an acrylate and a methacrylate.
  • “(meth) acryl” represents acryl and methacryl.
  • “(meth) acryloyl” represents acryloyl and methacryloyl.
  • (meth) acrylamide” represents acrylamide and methacrylamide.
  • “monomer” and “monomer” are synonymous.
  • a monomer is distinguished from an oligomer and a polymer, and refers to a compound having a weight average molecular weight of 2,000 or less.
  • the polymerizable compound means a compound containing a polymerizable group, and may be a monomer or a polymer.
  • the polymerizable group refers to a group that participates in a polymerization reaction.
  • the light-shielding composition contains the following components (1) and (2).
  • One of the features of the light-shielding composition is a metal atom relative to the content of silicon atoms on the surface of the particle, which is determined by X-ray photoelectron spectroscopy.
  • the content atom number ratio of the content of is 1.0 or less.
  • the term “metal atom” means a metal atom contained as a nitride in a particle unless otherwise specified.
  • X-ray photoelectron spectroscopy is a measurement object (metal nitriding) by irradiating a measurement object with X-rays and measuring the intrinsic energy of the generated photoelectrons.
  • This is a method for analyzing the content of each atom existing on the surface of the material-containing particles) (content based on the number of atoms of each atom: atomic%), which is performed under the following conditions.
  • Quantera-SXM (trade name) device manufactured by PHI
  • X-ray source Monochromatic Al K ⁇ ray (1486.6 eV, 25 W, 15 kV, beam diameter 200 ⁇ m ⁇ )
  • Measurement area 200 ⁇ m ⁇
  • Measurement method Press the particles using a press to obtain a thin pellet-shaped measurement sample. This measurement sample is set in the above apparatus, and the photoelectron take-off angle is set to 10 degrees.
  • the particles can be separated from the light-shielding composition by the following method. First, an organic solvent containing chloroform is added to the light-shielding composition, and components other than particles are dissolved to obtain a solution. The lysate is centrifuged to obtain a precipitate. Next, the precipitate is heated and concentrated to obtain particles.
  • the content of silicon atoms (unit: atomic%) with respect to all atoms contained on the surface of the particles and the inclusion of metal atoms with respect to all atoms contained on the surface of the particles can be determined.
  • the ratio of the number of contained metal atoms to the content of silicon atoms relative to the content of silicon atoms on the particle surface (hereinafter also referred to as “metal atom / silicon atom”) is calculated by the following equation.
  • the metal atom / silicon atom on the surface of the particle according to the above embodiment is 1.0 or less, preferably 0.7 or less, more preferably 0.5 or less, and still more preferably 0.3 or less. Although it does not restrict
  • the state where the value of metal atom / silicon atom is 0 means that the surface of the particle is completely covered with a silicon atom and / or a compound containing a silicon atom (silicon-containing compound). In other words, it is intended that the entire surface of the particle is covered with silicon atoms and / or a silicon-containing compound, and the entire surface of the particle is preferably covered with a silicon-containing compound.
  • the present inventor has found that the surface of a metal atom nitride, particularly a metal atom nitride that does not contain oxygen atoms, which will be described later, is susceptible to oxidation.
  • a metal atom nitride When a metal atom nitride is oxidized, a metal atom oxide and / or metal atom oxynitride may be formed on the surface thereof.
  • metal atom oxides and metal atom oxynitrides generally have a higher light transmittance at a wavelength of 400 to 700 nm than metal atom nitrides. Accordingly, a light shielding film obtained by curing a light shielding composition containing particles containing a metal atom nitride whose surface has been oxidized often has poor light shielding properties.
  • a manufacturing process of a color filter, a solid-state imaging device, and a liquid crystal display device containing a light-shielding film obtained by curing the light-shielding composition will be described later.
  • the light-shielding composition is used to form the light-shielding film.
  • the light-shielding composition layer thus formed may be heated (for example, a reflow soldering process).
  • the metal atom nitride is presumed to be particularly susceptible to oxidation.
  • the metal nitride-containing particles contained in the light-shielding composition have a high coverage as described above. Accordingly, the surface of the nitride of metal atoms that are susceptible to oxidation is covered with silicon atoms and / or silicon-containing compounds, and is not easily oxidized even after the heating process, and it is easy to maintain high light shielding properties (heat resistance Is high).
  • the metal nitride-containing particles have a high coverage, silicon atoms on the surface and / or silicon-containing compounds and a substrate (which will be described later as a form of the substrate, for example, a silicon substrate and an alkali-free glass) Interaction with the substrate). Therefore, it is estimated that the light shielding film obtained by hardening
  • the particles are not particularly limited as long as they contain metal atom nitrides and have a predetermined surface state, and known metal nitride-containing particles can be used. It does not restrict
  • Examples of the metal atom include transition metals, and group 3 to 11 transition metals are preferred in that the light shielding film obtained by curing the light shielding composition has better light shielding properties, and Ti, Sc, V , Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, or Pt are more preferable, and Ti, Sc, V , Cr, Co, Cu, Y, Zr, Mo, Tc, Ru, Rh, Pd, Hf, Ta, W, Re, or Pt are more preferable, and Ti, V, Cr, Y, Zr, Nb, Hf, Ta , W, or Re is particularly preferable, and Ti, V, Nb, Ta, or Zr is most preferable.
  • the content of the metal atom in the particle is not particularly limited, but is preferably 20 to 80% by mass with respect to the total mass of the particle.
  • the content of metal atoms in the particles can be analyzed using ICP (Inductively Coupled Plasma) emission spectroscopy.
  • a metal atom may be used individually by 1 type, or may use 2 or more types together. When two or more metal atoms are used in combination, the total content is preferably within the above range.
  • the particles contain nitrides of metal atoms.
  • Metal nitride may be mixed with oxygen during its synthesis.
  • the content of oxygen atoms in the metal atom nitride is preferably 0.001 to 40 mass%, more preferably 0.001 to 35 mass%, more preferably 0.001 to the total mass of the metal atom nitride. More preferably, it is 30% by mass.
  • the oxygen atom content can be analyzed using an inert gas melting-infrared absorption method.
  • it is preferable that the nitride of a metal atom does not contain an oxygen atom substantially from the point that the light shielding film obtained by hardening
  • Ti nitride is titanium nitride.
  • the titanium nitride is not particularly limited, and known titanium nitride can be used.
  • titanium nitride examples include low-order titanium oxide expressed by TiN, TiO 2 , Ti n O 2n-1 (1 ⁇ n ⁇ 20), and TiN x O y (0 ⁇ x ⁇ 2.0, 0.
  • the form containing the titanium oxynitride which can be represented by 1 ⁇ y ⁇ 2.0) is mentioned.
  • the titanium nitride preferably has a peak diffraction angle 2 ⁇ of 42.5 ° or more and 43.5 ° or less when the CuK ⁇ ray is used as an X-ray source.
  • the crystallite size constituting the titanium nitride can be determined from the half width of the peak obtained by measuring the X-ray diffraction spectrum.
  • the crystallite size can be calculated using Scherrer's equation.
  • the specific surface area of titanium nitride is not particularly limited, but can be determined by the BET (Brunauer, Emmett, Teller) method.
  • the specific surface area of the titanium nitride is preferably 5.0 ⁇ 100m 2 / g, more preferably 10 ⁇ 60m 2 / g.
  • the peak diffraction angle 2 ⁇ derived from the (200) plane of the particles is preferably 42.5 ° or more and 43.5 ° or less, and 42.5 ° or more. 42.8 or less is more preferable.
  • the diffraction angle 2 ⁇ of the peak derived from the (200) plane of the particles is 42.5 ° or more and 42.8 ° or less, the light-shielding composition has a more excellent effect of the present invention.
  • the particles contain silicon atoms, but when the diffraction angle 2 ⁇ of the peak derived from the (200) plane of the particles is 42.5 to 42.8, the center portion of the particles contains more titanium nitride. In many cases, the outer peripheral portion tends to have a higher silicon atom content. That is, particles having 2 ⁇ within the above range tend to be core-shell type particles in which titanium nitride is coated with a silicon-containing compound.
  • the method for producing a metal atom nitride is not particularly limited, and a known method can be used.
  • Examples of the method for producing a metal atom nitride include a gas phase reaction method.
  • Examples of the gas phase reaction method include an electric furnace method, a thermal plasma method, and the like.
  • the thermal plasma method is preferable in that impurities are less mixed, the particle diameter is easily uniformed, and productivity is high.
  • a method for generating thermal plasma is not particularly limited, and includes direct current arc discharge, multilayer arc discharge, radio frequency (RF) plasma, hybrid plasma, and the like, and there is little mixing of impurities from the electrodes. High frequency plasma is more preferred.
  • a specific method for producing a metal atom nitride by a thermal plasma method is not particularly limited.
  • a method for producing titanium nitride titanium tetrachloride is reacted with ammonia gas in a plasma flame (Japanese Patent Laid-Open No. Hei. 2-22110), a method in which titanium powder is evaporated by high-frequency thermal plasma, nitrogen is introduced as a carrier gas, and is nitrided and synthesized in the cooling process (Japanese Patent Laid-Open No. Sho 61-11140), and at the periphery of the plasma Examples include a method of blowing ammonia gas (Japanese Patent Laid-Open No. 63-85007).
  • the method for producing a metal atom nitride is not limited to the above, and the production method is not limited as long as a metal atom nitride having desired physical properties can be obtained.
  • the particle contains a nitride of the above metal atom, and the content atom number ratio of the metal atom content to the silicon atom content on the surface of the particle determined by X-ray photoelectron spectroscopy is 1.0. It is as follows. That is, a predetermined amount of silicon atoms and / or silicon-containing compounds are present on the surface of the particles. Especially, it is preferable that a silicon-containing compound exists in the surface of particle
  • the form in which the silicon-containing compound is present on the surface of the particle is not particularly limited.
  • a form in which a nitride of a metal atom has a silicon-containing compound coating on the surface in other words, a nitride of a metal atom is silicon-containing.
  • covered with a compound are mentioned.
  • a metal atom nitride is coated with a silicon-containing compound means that when a particle surface is analyzed by ESCA, an atom derived from the silicon-containing compound (specifically, a silicon atom) ) Is intended to be detected.
  • the silicon-containing compound used for coating the nitride of the metal atom is not particularly limited as long as it contains a silicon atom, and a known silicon-containing compound can be used.
  • Examples of the silicon-containing compound include silica, a silane compound, and a siloxane resin.
  • silane compound examples include compounds described in paragraph 0029 of JP-A No. 2004-219978, and the above contents are incorporated herein.
  • siloxane resin examples include resins obtained by hydrolytic condensation of at least one selected from the group consisting of alkoxysilane compounds represented by the following formulas (1) to (3).
  • An aralkyl group (the carbon number is preferably 7 to 23, more preferably 7 to 15, and particularly preferably 7 to 11), and an alkyl group, an aryl group, or an alkenyl group is more preferable.
  • a is 0, 1 or 2.
  • R 3 is a functional group-containing group.
  • the functional group is preferably a group containing a hetero atom (S, O, N, P, Si, etc.) in the structure. Or it is preferable to contain a polymeric group, an acidic group, or a basic group. (Meth) acryloyloxy group, thiol group (sulfanyl group), epoxy group, oxetane group, glycidyl group, glycidoxy group, hydroxy group, phenolic hydroxyl group, carboxylic acid group, phosphoric acid group, sulfonic acid group, phosphonic acid group, amino A group, an isocyanate group, a urea group, or a group having these substituents.
  • examples of the linking group include the examples of the linking group L described in paragraph 0105 of JP-A No. 2016-74870, the contents of which are incorporated herein. .
  • a hydrocarbon linking group is preferred as the linking group.
  • the carboxylic acid group, sulfonic acid group, phosphoric acid group, and phosphonic acid group may form a salt, ester, or anhydride thereof.
  • the amino group may also form a salt.
  • R 4 and R 5 are each independently a group having the same meaning as R 1 . C is 0 or 1.
  • R 6 and R 7 each independently, said R 1 group having the same meaning as, or, an alkoxy group (carbon number is preferably from 1 to 12, more preferably 1 to 6, 1-3 Is particularly preferred), an alkenyloxy group (carbon number is preferably 2-12, more preferably 2-6), an alkynyloxy group (carbon number is preferably 2-12, more preferably 2-6), aryl An oxy group (the carbon number is preferably 6-22, more preferably 6-14, and particularly preferably 6-10), or an aralkyloxy group (the carbon number is preferably 7-23, more preferably 7-15, 7 to 11 are particularly preferable.
  • One to four of the plurality of R 6 and R 7 may be R 3 groups.
  • X is a divalent or higher linking group.
  • linking group L examples include S, O, CO, NR N , and polysulfide groups (2 to 6 S).
  • X is a trivalent linking group, for example, an isocyanuric skeleton is exemplified.
  • d is an integer of 1 to 4, preferably 1 or 2.
  • R 1 to R 7 may each independently have an arbitrary substituent T.
  • you may couple
  • Examples of the compound represented by the formula (1) include methyltrimethoxysilane and phenyltrimethoxysilane.
  • Specific examples of other compounds represented by formula (1) include the compounds described in paragraph 0025 of JP-A-2016-74870, and the above contents are incorporated herein.
  • Specific examples of the compound represented by the formula (2) are described in paragraph 0026 of JP-A-2016-74870, and specific examples of the compound represented by the formula (3) are described in JP-A-2016-74870.
  • the compounds described in paragraphs 0027 of the publication are listed respectively, the contents of which are incorporated herein.
  • the siloxane resin can be obtained through the hydrolysis reaction and the condensation reaction using the above-described alkoxysilane compound.
  • a known method can be used as the hydrolysis-condensation reaction, and a catalyst such as an acid or a base may be used as necessary.
  • the catalyst is not particularly limited as long as the pH is changed.
  • examples of the acid include nitric acid, phosphoric acid, oxalic acid, acetic acid, formic acid, and hydrochloric acid. It is done.
  • the alkali include ammonia, triethylamine, and ethylenediamine.
  • the method for coating a metal atom nitride with a silicon-containing compound is not particularly limited, and a known coating method can be used.
  • a method of coating a metal atom nitride with a silicon-containing compound for example, the method described in JP-A-53-33228, page 2 lower right to page 4 upper right (in place of titanium oxide, metal atom ), The method described in paragraphs 0015 to 0043 of JP-A-2008-69193 (using nitrides of metal atoms instead of fine-particle titanium dioxide), paragraph 0020 of JP-A-2016-74870 And the method described in paragraphs 0124 to 0138 (using nitrides of metal atoms instead of metal oxide fine particles), and the above contents are incorporated herein.
  • the thickness of the film made of the silicon-containing compound is not particularly limited, but is preferably 1 to 10 nm.
  • the film thickness of the silicon-containing compound was determined by embedding the particles in a resin, cutting the particles together with the resin with an ultramicrotome, and observing the cut cross-section with a transmission electron microscope (TEM: Transmission Electron Microscope) It can be measured by performing element mapping with an energy dispersive X-ray analyzer and analyzing the coating state with the silicon-containing compound.
  • the average primary particle size of the particles is not particularly limited, but the average primary particle size is that the light-shielding composition layer has more excellent flatness, and the particles are more difficult to settle in the light-shielding composition. Is preferably 5 to 70 nm, In addition, in this specification, the average primary particle diameter intends the average primary particle diameter of particles measured by the following method.
  • the average primary particle size can be measured using a transmission electron microscope (TEM). As the transmission electron microscope, for example, a transmission microscope HT7700 manufactured by Hitachi High-Technologies Corporation can be used.
  • the light-shielding composition contains a polymerizable compound and / or a resin.
  • the polymerizable compound is not particularly limited as long as it is a compound containing a polymerizable group, and a known polymerizable compound can be used.
  • the content of the polymerizable compound is preferably 5 to 30% by mass with respect to the total solid content of the light-shielding composition.
  • a polymeric compound may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types of polymeric compounds together, it is preferable that total content is in the said range.
  • the polymerizable compound is preferably a compound containing at least one group containing an ethylenically unsaturated bond, more preferably a compound containing 2 or more, further preferably containing 3 or more, and containing 5 or more. Is particularly preferred.
  • the upper limit is 15 or less, for example.
  • Examples of the group containing an ethylenically unsaturated bond include a vinyl group, a (meth) allyl group, and a (meth) acryloyl group.
  • polymerizable compound for example, compounds described in paragraph 0050 of JP-A-2008-260927 and paragraph 0040 of JP-A-2015-68893 can be used, and the above contents are incorporated in this specification. It is.
  • the polymerizable compound may be in any of chemical forms such as a monomer, a prepolymer, an oligomer, a mixture thereof, and a multimer thereof.
  • the polymerizable compound is preferably a 3 to 15 functional (meth) acrylate compound, more preferably a 3 to 6 functional (meth) acrylate compound.
  • the polymerizable compound is also preferably a compound having one or more groups containing an ethylenically unsaturated bond and having a boiling point of 100 ° C. or higher under normal pressure.
  • compounds described in JP-A-2013-29760, paragraph 0227, and JP-A-2008-292970, paragraphs 0254 to 0257 can be referred to, the contents of which are incorporated herein.
  • Polymerizable compounds are dipentaerythritol triacrylate (KAYARAD D-330 as a commercial product; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (KAYARAD D-320 as a commercial product; manufactured by Nippon Kayaku), di Pentaerythritol penta (meth) acrylate (KAYARAD D-310 as a commercial product; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa (meth) acrylate (KAYARAD DPHA as a commercial product; manufactured by Nippon Kayaku Co., Ltd., A-DPH- 12E; manufactured by Shin-Nakamura Chemical Co., Ltd.) and a structure in which these (meth) acryloyl groups are mediated by an ethylene glycol residue or a propylene glycol residue (for example, SR454, SR499, commercially available from Sartomer).
  • oligomer types can also be used.
  • NK ester A-TMMT penentaerythritol tetraacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd.
  • KAYARAD RP-1040 manufactured by Nippon Kayaku Co., Ltd.
  • the preferable form of the polymerizable compound is shown below.
  • the polymerizable compound may have an acid group such as a carboxylic acid group, a sulfonic acid group, and a phosphoric acid group.
  • an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid is preferable, and a non-aromatic carboxylic acid anhydride is reacted with an unreacted hydroxy group of the aliphatic polyhydroxy compound.
  • a polymerizable compound having an acid group is more preferable, and in this ester, the aliphatic polyhydroxy compound is pentaerythritol and / or dipentaerythritol. Examples of commercially available products include Aronix TO-2349, M-305, M-510, and M-520 manufactured by Toagosei Co., Ltd.
  • the acid value of the polymerizable compound containing an acid group is preferably from 0.1 to 40 mgKOH / g, more preferably from 5 to 30 mgKOH / g.
  • the acid value of the polymerizable compound is 0.1 mgKOH / g or more, the development dissolution properties are good, and when it is 40 mgKOH / g or less, it is advantageous in production and / or handling. Furthermore, the photopolymerization performance is good and the curability is excellent.
  • the polymerizable compound is also preferably a compound containing a caprolactone structure.
  • the compound containing a caprolactone structure is not particularly limited as long as it contains a caprolactone structure in the molecule.
  • Examples include ⁇ -caprolactone-modified polyfunctional (meth) acrylates obtained by esterifying polyhydric alcohols such as erythritol, glycerin, diglycerol, trimethylolmelamine, (meth) acrylic acid and ⁇ -caprolactone.
  • ⁇ -caprolactone-modified polyfunctional (meth) acrylates obtained by esterifying polyhydric alcohols such as erythritol, glycerin, diglycerol, trimethylolmelamine, (meth) acrylic acid and ⁇ -caprolactone.
  • Z-1 formula
  • R 1 represents a hydrogen atom or a methyl group
  • m represents a number of 1 or 2
  • “*” represents a bond.
  • R 1 represents a hydrogen atom or a methyl group
  • “*” represents a bond
  • a compound represented by the following formula (Z-4) or (Z-5) can also be used.
  • each E independently represents — ((CH 2 ) y CH 2 O) — or ((CH 2 ) y CH (CH 3 ) O) —.
  • Y represents an integer of 0 to 10
  • X independently represents a (meth) acryloyl group, a hydrogen atom, or a carboxylic acid group.
  • the total number of (meth) acryloyl groups is 3 or 4
  • each m independently represents an integer of 0 to 10
  • the total of each m is an integer of 0 to 40.
  • the total number of (meth) acryloyl groups is 5 or 6
  • each n independently represents an integer of 0 to 10 and the total of each n is an integer of 0 to 60.
  • m is preferably an integer of 0 to 6, and more preferably an integer of 0 to 4.
  • the total of each m is preferably an integer of 2 to 40, more preferably an integer of 2 to 16, and further preferably an integer of 4 to 8.
  • n is preferably an integer of 0 to 6, and more preferably an integer of 0 to 4.
  • the total of each n is preferably an integer of 3 to 60, more preferably an integer of 3 to 24, and still more preferably an integer of 6 to 12.
  • formula (Z-4) or formula (Z-5) — ((CH 2 ) y CH 2 O) — or ((CH 2 ) y CH (CH 3 ) O) — A form in which the terminal is bonded to X is preferred.
  • the compounds represented by formula (Z-4) or formula (Z-5) may be used alone or in combination of two or more.
  • all six Xs are acryloyl groups
  • all six Xs are acryloyl groups
  • a form that is a mixture with a compound having at least one hydrogen atom is preferred. With such a configuration, the developability can be further improved.
  • the total content of the compound represented by the formula (Z-4) or the formula (Z-5) in the polymerizable compound is preferably 20% by mass or more, and more preferably 50% by mass or more.
  • pentaerythritol derivatives and / or dipentaerythritol derivatives are more preferable.
  • the polymerizable compound may contain a cardo skeleton.
  • a polymerizable compound containing a 9,9-bisarylfluorene skeleton is preferable.
  • Examples of the polymerizable compound containing a cardo skeleton include, but are not limited to, oncoat EX series (manufactured by Nagase Sangyo Co., Ltd.) and Ogsol (manufactured by Osaka Gas Chemical Co., Ltd.).
  • the resin is not particularly limited, and a known resin can be used.
  • the resin content is preferably 2 to 30% by mass with respect to the total solid content of the light-shielding composition.
  • Resin may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types of resin together, it is preferable that the total amount is in the said range.
  • the resin examples include an epoxy resin, an acrylic resin, a siloxane resin, and a polyimide resin, and may be photosensitive or non-photosensitive.
  • the resin is preferably a resin that is soluble or swellable in water or weak alkaline water in order to enable water development or weak alkaline water development.
  • alkali-soluble resin resin containing group (alkali-soluble group) which accelerates
  • alkali-soluble resin examples include resins containing at least one alkali-soluble group in the molecule.
  • the alkali-soluble group is not particularly limited, and examples thereof include a carboxylic acid group, a phosphoric acid group, a sulfonic acid group, and a phenolic hydroxyl group. Only one type of alkali-soluble group may be used, or two or more types may be used.
  • alkali-soluble resin examples include, for example, polyamic acid.
  • the polyamic acid is generally obtained by subjecting a compound having an acid anhydride group and a diamine compound to an addition polymerization reaction at 40 to 100 ° C., and preferably contains a repeating unit of the following formula (4).
  • R 1 is a trivalent or more organic group having 2 to 22 carbon atoms
  • R 2 is a divalent organic group having 1 to 22 carbon atoms
  • n is an integer of 1 or more.
  • polyamic acid what is obtained, for example by making a tetracarboxylic dianhydride and an aromatic diamine compound react in a polar solvent is preferable.
  • the tetracarboxylic dianhydride include compounds described in paragraphs 0041 and 0043 of JP-A-2008-260927, and the above contents are incorporated herein.
  • the aromatic diamine compound include the compounds described in paragraphs 0040 and 0043 of JP-A-2008-260927, and the above contents are incorporated herein.
  • the method for synthesizing the polyamic acid is not particularly limited, and a known method can be used.
  • the method described in paragraph 0044 of JP-A-2008-260927 can be used, and the above contents are incorporated herein.
  • alkali-soluble resin is a copolymer of an unsaturated carboxylic acid and an ethylenically unsaturated compound.
  • Monocarboxylic acids such as (meth) acrylic acid, crotonic acid, and vinyl acetic acid
  • Dicarboxylic acids such as itaconic acid, maleic acid, and fumaric acid, or its acid Anhydrides
  • polyvalent carboxylic acid monoesters such as mono (2- (meth) acryloyloxyethyl) phthalate; and the like.
  • Examples of the copolymerizable ethylenically unsaturated compound include methyl (meth) acrylate.
  • compounds described in paragraphs 0027 of JP2010-97210A and paragraphs 0036-0037 of JP201556893A can also be used, and the above contents are incorporated herein.
  • a copolymerizable ethylenically unsaturated compound that contains an ethylenically unsaturated group in the side chain may be used in combination.
  • (meth) acrylic acid is preferable.
  • An acrylic resin having an ethylenically unsaturated group in the side chain is obtained by, for example, adding an ethylenically unsaturated compound containing a glycidyl group or an alicyclic epoxy group to a carboxylic acid group of an acrylic resin containing a carboxylic acid group. Can be obtained.
  • alkali-soluble resin examples include JP-A-59-44615, JP-B-54-34327, JP-B-58-12777, JP-B-54-25957, JP-A-54-92723, JP-A-59-.
  • alkali-soluble resin for example, the compounds described in paragraphs 0225 to 0245 of JP-A-2016-75845 can also be used, and the above contents are incorporated herein.
  • the light-shielding composition may contain other components.
  • other components include a dispersant, a polymerization initiator, a solvent, a surfactant, and an adhesion improving agent. Below, the form is explained in full detail for every component.
  • the light-shielding composition preferably contains a dispersant.
  • the dispersant contributes to improving the dispersibility of the colorant (particles and pigment described later).
  • the resin and the dispersant are different components.
  • the content of the dispersant is preferably 5 to 30% by mass with respect to the total solid content of the light-shielding composition.
  • a dispersing agent may be used individually by 1 type, or may use 2 or more types together. When two or more dispersants are used in combination, the total amount is preferably within the above range.
  • the dispersant for example, a known dispersant can be appropriately selected and used. Of these, polymer compounds are preferable.
  • the dispersant include polymer dispersants [for example, polyamidoamine and its salt, polycarboxylic acid and its salt, high molecular weight unsaturated acid ester, modified polyurethane, modified polyester, modified poly (meth) acrylate, (meth) acrylic type Copolymer, naphthalenesulfonic acid formalin condensate], polyoxyethylene alkyl phosphate ester, polyoxyethylene alkyl amine, and pigment derivatives.
  • polymer dispersants for example, polyamidoamine and its salt, polycarboxylic acid and its salt, high molecular weight unsaturated acid ester, modified polyurethane, modified polyester, modified poly (meth) acrylate, (meth) acrylic type Copolymer, naphthalenesulfonic acid formalin condensate], polyoxyethylene alkyl phosphate ester, polyoxy
  • the polymer compound is adsorbed on the surface of the colorant to be dispersed, and acts to prevent re-aggregation of the object to be dispersed. Therefore, terminal-modified polymers, graft polymers, block polymers, and the like that contain an anchor site to the pigment surface are preferred.
  • the polymer compound preferably contains a structural unit containing a graft chain.
  • structural unit is synonymous with “repeating unit”. Since the polymer compound containing a structural unit containing such a graft chain has an affinity for a solvent by the graft chain, the dispersibility of the colorant and the dispersion stability after the lapse of time (stability over time) Excellent. Further, due to the presence of the graft chain, the polymer compound containing the structural unit containing the graft chain has an affinity with a polymerizable compound or other resin that can be used in combination. As a result, it becomes difficult to produce a residue by alkali development.
  • the graft chain When the graft chain becomes longer, the steric repulsion effect becomes higher and the dispersibility of the colorant is improved. On the other hand, if the graft chain is too long, the adsorptive power to the colorant is lowered and the dispersibility of the colorant tends to be lowered.
  • the graft chain preferably has 40 to 10,000 atoms excluding hydrogen atoms, more preferably 50 to 2000 atoms excluding hydrogen atoms, and the number of atoms excluding hydrogen atoms. More preferred is 60-500.
  • the graft chain means from the base of the main chain of the copolymer (the atom bonded to the main chain in a group branched from the main chain) to the end of the group branched from the main chain.
  • the graft chain preferably contains a polymer structure.
  • a polymer structure include a poly (meth) acrylate structure (for example, a poly (meth) acrylic structure), a polyester structure, a polyurethane structure, a polyurea structure, and a polyamide.
  • examples thereof include a structure and a polyether structure.
  • the graft chain is at least selected from the group consisting of a polyester structure, a polyether structure and a poly (meth) acrylate structure.
  • a graft chain containing one kind is preferred, and a graft chain containing at least one of a polyester structure or a polyether structure is more preferred.
  • the macromonomer containing a reactive double bond group can be used conveniently.
  • Examples of the commercially available macromonomer that corresponds to the structural unit containing the graft chain contained in the polymer compound and is suitably used for the synthesis of the polymer compound include the compounds described in paragraph 0040 of JP-A-2015-034983.
  • the structural unit containing a graft chain included in the polymer compound include the structural units described in paragraphs 0041 to 0058 of JP-A-2015-034983, the contents of which are incorporated herein. Further, the dispersant may contain various structural units described in paragraphs 0059 to 0088 of JP-A-2015-034983.
  • the light-shielding composition preferably contains a polymerization initiator. It does not restrict
  • the polymerization initiator is preferably a so-called radical polymerization initiator.
  • thermal polymerization initiator examples include 2,2′-azobisisobutyronitrile (AIBN), 3-carboxypropionitrile, azobismaleonitrile, dimethyl- (2,2 ′)-azobis (2-methyl). And azo compounds such as propionate [V-601] and organic peroxides such as benzoyl peroxide, lauroyl peroxide and potassium persulfate.
  • AIBN 2,2′-azobisisobutyronitrile
  • 3-carboxypropionitrile 3-carboxypropionitrile
  • azobismaleonitrile dimethyl- (2,2 ′)-azobis (2-methyl
  • azo compounds such as propionate [V-601]
  • organic peroxides such as benzoyl peroxide, lauroyl peroxide and potassium persulfate.
  • Specific examples of the polymerization initiator include, for example, polymerization initiators described on pages 65 to 148 of “Ultraviolet curing system” written by Kiyo
  • the light-shielding composition preferably contains a photopolymerization initiator.
  • a photoinitiator if a superposition
  • the photopolymerization initiator for example, those having photosensitivity from the ultraviolet region to the visible light region are preferable. Further, it may be an activator that generates an active radical by generating some action with a photoexcited sensitizer, and may be an initiator that initiates cationic polymerization according to the type of the polymerizable compound.
  • the photopolymerization initiator preferably contains at least one compound having a molar extinction coefficient of at least about 50 within a range of about 300 nm to 800 nm (more preferably 330 nm to 500 nm).
  • the content of the photopolymerization initiator is preferably 2 to 20% by mass with respect to the total solid content of the light-shielding composition.
  • a photoinitiator may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types of photoinitiators together, it is preferable that the total amount is in the said range.
  • the photopolymerization initiator examples include alkylphenone photopolymerization initiators, acylphosphine oxide photopolymerization initiators, and oxime ester photopolymerization initiators (oxime ester compounds). Especially, it is preferable to contain an oxime ester compound at the point which the light-shielding composition has the effect of this invention more excellent.
  • the light-shielding composition when used for the production of a light-shielding film, it is necessary to form a fine pattern with a sharp shape. It is. From such a viewpoint, it is particularly preferable to use an oxime ester compound as the photopolymerization initiator.
  • an oxime ester compound as the photopolymerization initiator.
  • stepper exposure is used for exposure for curing, but this exposure machine may be damaged by halogen, and the amount of photopolymerization initiator added must be kept low.
  • paragraphs 0265 to 0268 of JP2013-29760A can be referred to, and the contents thereof are incorporated in the present specification.
  • hydroxyacetophenone compounds As the photopolymerization initiator, hydroxyacetophenone compounds, aminoacetophenone compounds, and acylphosphine compounds can also be suitably used. More specifically, for example, an aminoacetophenone initiator described in JP-A-10-291969 and an acylphosphine initiator described in Japanese Patent No. 4225898 can also be used.
  • hydroxyacetophenone compound IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, and IRGACURE-127 (trade names: all manufactured by BASF) can be used.
  • aminoacetophenone compound commercially available products IRGACURE-907, IRGACURE-369, or IRGACURE-379EG (trade names: all manufactured by BASF) can be used.
  • aminoacetophenone compound a compound described in JP-A-2009-191179 in which an absorption wavelength is matched with a long wave light source such as 365 nm or 405 nm can also be used.
  • acylphosphine compound commercially available IRGACURE-819 or IRGACURE-TPO (trade name: all manufactured by BASF) can be used.
  • an oxime ester compound As a photoinitiator, an oxime ester compound (oxime compound) is more preferable.
  • the oxime compound has high sensitivity and high polymerization efficiency, can cure the light-shielding composition layer regardless of the colorant concentration, and can be easily designed with a high colorant concentration.
  • a compound described in JP-A No. 2001-233842 a compound described in JP-A No. 2000-80068, or a compound described in JP-A No. 2006-342166 can be used.
  • Examples of the oxime compound include 3-benzoyloxyiminobutan-2-one, 3-acetoxyiminobutan-2-one, 3-propionyloxyiminobutan-2-one, 2-acetoxyiminopentan-3-one, 2-acetoxyimino-1-phenylpropan-1-one, 2-benzoyloxyimino-1-phenylpropan-1-one, 3- (4-toluenesulfonyloxy) iminobutan-2-one, and 2-ethoxycarbonyl And oxyimino-1-phenylpropan-1-one.
  • J.H. C. S. Perkin II (1979) pp. 1653-1660) J.M. C. S.
  • IRGACURE-OXE01 manufactured by BASF
  • IRGACURE-OXE02 manufactured by BASF
  • IRGACURE-OXE03 manufactured by BASF
  • IRGACURE-OXE04 manufactured by BASF
  • oxime compounds other than those described above compounds described in JP-A-2009-519904 in which an oxime is linked to the carbazole N-position; compounds described in US Pat. No. 7,626,957 in which a hetero substituent is introduced into the benzophenone moiety; Compounds described in Japanese Patent Application Laid-Open No. 2010-15025 and US Patent Publication No. 2009-292039 in which a nitro group is introduced at the dye moiety; Ketooxime compounds described in International Patent Publication No. 2009-131189; Triazine skeleton and oxime skeleton are the same molecule A compound described in US Pat. No.
  • the oxime compound is preferably a compound represented by the following formula (OX-1).
  • the N—O bond of the oxime compound may be an (E) oxime compound, a (Z) oxime compound, a mixture of (E) isomer and (Z) isomer. Good.
  • R and B each independently represent a monovalent substituent
  • A represents a divalent organic group
  • Ar represents an aryl group.
  • the monovalent substituent represented by R is preferably a monovalent nonmetallic atomic group.
  • the monovalent nonmetallic atomic group include an alkyl group, an aryl group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a heterocyclic group, an alkylthiocarbonyl group, and an arylthiocarbonyl group.
  • these groups may have one or more substituents.
  • the substituent mentioned above may be further substituted by another substituent.
  • the substituent examples include a halogen atom, an aryloxy group, an alkoxycarbonyl group or an aryloxycarbonyl group, an acyloxy group, an acyl group, an alkyl group, and an aryl group.
  • the monovalent substituent represented by B is preferably an aryl group, a heterocyclic group, an arylcarbonyl group, or a heterocyclic carbonyl group. These groups may have one or more substituents. Examples of the substituent include the above-described substituents.
  • the divalent organic group represented by A is preferably an alkylene group having 1 to 12 carbon atoms, a cycloalkylene group, or an alkynylene group. These groups may have one or more substituents. Examples of the substituent include the above-described substituents.
  • An oxime compound containing a fluorine atom can also be used as a photopolymerization initiator.
  • Specific examples of the oxime compound containing a fluorine atom include compounds described in JP2010-262028; compounds 24 and 36 to 40 described in JP2014-500852; compounds described in JP2013-164471A (C-3); and the like. This content is incorporated herein.
  • photopolymerization initiator compounds represented by the following general formulas (1) to (4) can also be used.
  • R 1 and R 2 are each independently an alkyl group having 1 to 20 carbon atoms, an alicyclic hydrocarbon group having 4 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, or Represents an arylalkyl group having 7 to 30 carbon atoms, and when R 1 and R 2 are phenyl groups, the phenyl groups may be bonded to each other to form a fluorene group, and R 3 and R 4 are each independently Represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, an arylalkyl group having 7 to 30 carbon atoms or a heterocyclic group having 4 to 20 carbon atoms, and X represents a direct bond or carbonyl Indicates a group.
  • R 1 represents an alkyl group having 1 to 20 carbon atoms, an alicyclic hydrocarbon group having 4 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, or an aryl group having 7 to 30 carbon atoms.
  • R 3 and R 4 each independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, an arylalkyl group having 7 to 30 carbon atoms or a carbon number of 4 Represents a heterocyclic group of ⁇ 20, and X represents a direct bond or a carbonyl group.
  • R 1 and R 2 are preferably each independently a methyl group, ethyl group, n-propyl group, i-propyl group, cyclohexyl group or phenyl group.
  • R 3 is preferably a methyl group, an ethyl group, a phenyl group, a tolyl group or a xylyl group.
  • R 4 is preferably an alkyl group having 1 to 6 carbon atoms or a phenyl group.
  • R 5 is preferably a methyl group, an ethyl group, a phenyl group, a tolyl group or a naphthyl group.
  • X is preferably a direct bond.
  • R 1 is preferably each independently a methyl group, ethyl group, n-propyl group, i-propyl group, cyclohexyl group or phenyl group.
  • R 3 is preferably a methyl group, an ethyl group, a phenyl group, a tolyl group or a xylyl group.
  • R 4 is preferably an alkyl group having 1 to 6 carbon atoms or a phenyl group.
  • R 5 is preferably a methyl group, an ethyl group, a phenyl group, a tolyl group or a naphthyl group.
  • X is preferably a direct bond.
  • Specific examples of the compounds represented by the formulas (1) and (2) include compounds described in paragraph numbers 0076 to 0079 of JP-A No. 2014-137466, for example. This content is incorporated herein.
  • the oxime compound preferably has a maximum absorption wavelength in the wavelength region of 350 nm to 500 nm, more preferably has a maximum absorption wavelength in the wavelength region of 360 nm to 480 nm, and more preferably has a high absorbance at 365 nm and 405 nm.
  • the molar extinction coefficient at 365 nm or 405 nm of the oxime compound is preferably 1,000 to 300,000, more preferably 2,000 to 300,000, more preferably 5,000 to 200,000 from the viewpoint of sensitivity. More preferably, it is 000.
  • a known method can be used. It is preferable to measure. You may use a photoinitiator in combination of 2 or more type as needed.
  • Bifunctional or trifunctional or higher functional compounds can also be used as the photopolymerization initiator.
  • Specific examples of such compounds include JP 2010-527339 A, JP 2011-524436 A, International Publication No. 2015/004565, Japanese Patent Publication No. 2016-532675, paragraphs 0417 to 0412, International Publication No. Dimers of oxime compounds described in paragraphs 0039 to 0055 of 2017/033680, compounds (E) and (G) described in JP 2013-522445 A, and International Publication No. 2016/034963 Cmpd 1 to 7 described in the above issue.
  • the light-shielding composition preferably contains a solvent.
  • the solvent include water and organic solvents.
  • a light-shielding composition contains an organic solvent.
  • the solid content of the light-shielding composition is preferably 10 to 40% by mass.
  • the solid content of the light-shielding composition is at least the lower limit value, the viscosity is low and the coatability is improved.
  • the concentration of the highly reactive compound is lowered, the temporal stability is improved.
  • the solid content of the light-shielding composition is not more than the upper limit value, the viscosity is maintained at a certain level and the applicability is improved.
  • the colorant having a high specific gravity is less likely to settle, and the stability over time is improved.
  • organic solvent When the light-shielding composition contains an organic solvent, the content of the organic solvent is preferably 60 to 90% by mass with respect to the total mass of the light-shielding composition.
  • an organic solvent may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types of organic solvents together, it is preferable that the total amount becomes the said range.
  • the organic solvent is not particularly limited.
  • acetone, methyl ethyl ketone, cyclohexane, ethylene dichloride, tetrahydrofuran, toluene ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether.
  • Acetylacetone, cyclohexanone, cyclopentanone, diacetone alcohol ethylene glycol monomethyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether acetate, 3-methoxypropanol, methoxymethoxyethanol, diethylene glycol Monoethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, 3-methoxypropyl acetate, N, N-dimethylformamide, dimethyl sulfoxide, ⁇ -butyrolactone, Examples include ethyl acetate, butyl acetate, methyl lactate, N-methyl-2-pyrrolidone and ethyl lactate.
  • the above-mentioned methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, -It is preferably composed of two or more selected from the group consisting of heptanone, cyclohexanone, cyclopentanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate.
  • the light-shielding composition may contain water. Water may be intentionally added, or may be inevitably contained in the light-shielding composition by adding each component contained in the light-shielding composition.
  • the water content is preferably 0.01 to 1% by mass relative to the total mass of the light-shielding composition. When the water content is within the above range, the generation of pinholes is suppressed when the light shielding film is produced, and the moisture resistance of the light shielding film is further improved.
  • the light-shielding composition preferably contains a surfactant.
  • the surfactant contributes to improving the coating property of the light-shielding composition.
  • the content of the surfactant is preferably 0.001 to 2.0% by mass with respect to the total mass of the light-shielding composition.
  • Surfactant may be used individually by 1 type, or may use 2 or more types together. When two or more surfactants are used in combination, the total amount is preferably within the above range.
  • surfactant examples include a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant.
  • the liquid properties (particularly fluidity) of the light-shielding composition are further improved. That is, in the case of forming a film using a light-shielding composition containing a fluorosurfactant, the wettability to the coated surface is improved by reducing the interfacial tension between the coated surface and the coating liquid. The applicability to the coated surface is improved. For this reason, even when a thin film of about several ⁇ m is formed with a small amount of liquid, it is effective in that a film having a uniform thickness with small thickness unevenness can be more suitably formed.
  • the fluorine content in the fluorosurfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and still more preferably 7 to 25% by mass.
  • a fluorine-based surfactant having a fluorine content within this range is effective in terms of uniformity of coating film thickness and / or liquid-saving properties, and has good solubility in a light-shielding composition. .
  • fluorosurfactant examples include Megafac F171, F172, F173, F176, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, F482, F554, F780 (above DIC Corporation), Florad FC430, FC431, FC171 (Sumitomo 3M Limited), Surflon S-382, SC-101, SC- 103, SC-104, SC-105, SC-1068, SC-381, SC-383, S393, K393, KH-40 (manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320, PF6520, PF7002 (made by OMNOVA) etc. are mentioned.
  • nonionic surfactant examples include glycerol, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerin ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene Stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62 manufactured by BASF, 10R5, 17R2, 25R2, Tetronic 304, 701, 704, 901, 904, 150R1), Rusupasu 20000 (Lubrizol Japan Co., Ltd.), and the like.
  • cationic surfactant examples include phthalocyanine derivatives (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid ( Co) polymer polyflow no. 75, no. 90, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.) and the like.
  • phthalocyanine derivatives trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.
  • organosiloxane polymer KP341 manufactured by Shin-Etsu Chemical Co., Ltd.
  • (meth) acrylic acid ( Co) polymer polyflow no. 75, no. 90, no. 95 manufactured by Kyoeisha Chemical Co., Ltd.
  • W001 manufactured by Yusho Co., Ltd.
  • anionic surfactants include W004, W005, W017 (manufactured by Yusho Co., Ltd.) and the like.
  • silicone surfactant examples include “Toray Silicone DC3PA”, “Toray Silicone SH7PA”, “Toray Silicone DC11PA”, “Tore Silicone SH21PA”, “Tore Silicone SH28PA”, “Toray Silicone” manufactured by Toray Dow Corning Co., Ltd.
  • the light-shielding composition may contain other coloring materials other than the particles.
  • other coloring materials various known pigments (colored pigments) and dyes (colored dyes) can be used.
  • the content can be determined according to the optical characteristics of the light-shielding film obtained by curing.
  • other coloring materials may be used individually by 1 type, or may use 2 or more types together.
  • the color pigment examples include chromatic pigments (such as R (red), G (green), and B (blue)) that form color pixels of the color filter in the case of use in color filter production.
  • Color pigments) and black pigments (black pigments) generally used for forming a black matrix or forming a light-shielding film can be used.
  • the coloring dye for example, when used in the production of a color filter, chromatic dyes such as R (red), G (green), and B (blue) that form color pixels of the color filter (present)
  • colorants described in paragraphs 0027 to 0200 of JP-A-2014-42375 can also be used.
  • the black dye (black dye) generally used for black matrix formation or light-shielding film formation can be used.
  • coloring materials described in paragraph 0031 of JP-A-2008-260927 and paragraphs 0015-0025 of JP-A-2015-68893 can be used, and the above contents are as follows. Incorporated herein.
  • the light-shielding composition may contain a silane coupling agent as an adhesion improving agent.
  • the silane coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, and 3-glycidoxypropylmethyldiethoxysilane. , Vinyltrimethoxysilane, vinyltriethoxysilane, and the like.
  • the content of the adhesion improving agent is not particularly limited, but is preferably 0.02 to 20% by mass with respect to the total solid content of the light-shielding composition.
  • the light-shielding composition can be prepared by mixing the above-mentioned various components by a known mixing method (for example, a mixing method using a stirrer, a homogenizer, a high-pressure emulsifier, a wet pulverizer, or a wet disperser).
  • a mixing method for example, a mixing method using a stirrer, a homogenizer, a high-pressure emulsifier, a wet pulverizer, or a wet disperser.
  • the components constituting the light-shielding composition may be blended together, or each component may be blended sequentially after being dissolved or dispersed in a solvent.
  • the order of input and the working conditions when blending are not particularly limited.
  • the light-shielding composition is preferably filtered with a filter for the purpose of removing foreign substances or reducing defects.
  • a filter can be used without particular limitation as long as it is used for filtration.
  • it is made of a material such as a fluororesin such as PTFE (polytetrafluoroethylene), a polyamide resin such as nylon, and a polyolefin resin (including high density and ultra high molecular weight) such as polyethylene and polypropylene (PP). Filter.
  • a fluororesin such as PTFE (polytetrafluoroethylene)
  • a polyamide resin such as nylon
  • a polyolefin resin including high density and ultra high molecular weight
  • PP polypropylene
  • the pore size of the filter is preferably about 0.1 to 7.0 ⁇ m, more preferably 0.2 to 2.5 ⁇ m, still more preferably 0.2 to 1.5 ⁇ m, and particularly preferably 0.3 to 0.7 ⁇ m. By setting this range, it is possible to reliably remove fine foreign matters such as impurities and aggregates contained in the pigment while suppressing filtration clogging of the pigment.
  • the filtering by the first filter may be performed only once or may be performed twice or more.
  • the second and subsequent pore diameters are the same or larger than the pore diameter of the first filtering.
  • the pore diameter here can refer to the nominal value of the filter manufacturer.
  • a commercially available filter for example, it can be selected from various filters provided by Nippon Pole Co., Ltd., Advantech Toyo Co., Ltd., Japan Entegris Co., Ltd. (formerly Japan Microlith Co., Ltd.) or KITZ Micro Filter Co. .
  • the second filter a filter formed of the same material as the first filter described above can be used.
  • the pore size of the second filter is preferably 0.2 to 10.0 ⁇ m, more preferably 0.2 to 7.0 ⁇ m, and still more preferably 0.3 to 6.0 ⁇ m. .
  • the light-shielding composition of the present invention preferably contains no impurities such as metals, metal salts containing halogens, acids, and alkalis.
  • the content of impurities contained in the filter material is preferably 1 ppm or less, more preferably 1 ppb or less, still more preferably 100 ppt or less, particularly preferably 10 ppt or less, and substantially free (below the detection limit of the measuring device). Most preferred).
  • the impurities can be measured by an inductively coupled plasma mass spectrometer (manufactured by Yokogawa Analytical Systems, Agilent 7500cs type).
  • a light shielding film can be formed by using a light shielding composition.
  • the thickness of the light shielding film is not particularly limited, but is preferably 0.2 to 25 ⁇ m.
  • the above thickness is an average thickness, and is a value obtained by measuring the thicknesses of any five or more points of the light shielding film and arithmetically averaging them.
  • substrate, forming a coating film, performing a hardening process with respect to a coating film, and manufacturing the light shielding film is mentioned.
  • the method of the curing treatment is not particularly limited, and examples thereof include a photocuring treatment or a thermosetting treatment, and a photocuring treatment (particularly a curing treatment by irradiation with actinic rays or radiation) is preferable from the viewpoint of easy pattern formation. .
  • a step of applying a light-shielding composition on a substrate to form a light-shielding composition layer (hereinafter referred to as “light-shielding composition layer forming step” as appropriate) Abbreviated), a step of exposing the light-shielding composition layer to irradiation with actinic rays or radiation (hereinafter abbreviated as “exposure step” where appropriate), and the light-shielding composition layer after exposure is developed.
  • a step of forming a light shielding film hereinafter abbreviated as “development step” as appropriate).
  • the light-shielding composition layer forming step the light-shielding composition is applied on the substrate to form a light-shielding composition layer.
  • substrate is not restrict
  • Various coating methods such as spin coating, slit coating, ink jet method, spray coating, spin coating, cast coating, roll coating, and screen printing can be applied as a method for coating the light-shielding composition on the substrate. .
  • the light-shielding composition layer applied on the substrate is usually preferably dried at 70 to 110 ° C. for 2 to 4 minutes. .
  • Exposure is performed by irradiating the light-shielding composition layer formed in the light-shielding composition layer forming step with actinic rays or radiation through a mask.
  • Exposure is preferably performed by irradiation of radiation, and as radiation that can be used for exposure, ultraviolet rays such as g-line, h-line, and i-line are particularly preferably used, and a high-pressure mercury lamp is preferred as a light source.
  • the irradiation intensity is preferably 5 mJ / cm 2 or more and 1500 mJ / cm 2 or less.
  • development processing (development step) is performed to elute the light non-irradiated portion in the exposure step into the developer. Thereby, only the photocured part remains.
  • An alkaline developer may be used as the developer. In that case, it is preferable to use an organic alkali developer.
  • the development temperature is usually from 20 ° C. to 30 ° C., and the development time is from 20 seconds to 90 seconds.
  • an alkaline solution for example, as an inorganic developer, an alkaline compound such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium hydrogen carbonate, sodium oxalate, and sodium metaoxalate, Examples thereof include an aqueous alkali solution dissolved so that the concentration is 0.001 to 10% by mass, preferably 0.005 to 0.5% by mass.
  • Organic alkaline developers include ammonia water, ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, choline , Pyrrole, piperidine, and alkaline compounds such as 1,8-diazabicyclo- [5,4,0] -7-undecene, in a concentration of 0.001 to 10% by mass, preferably 0.005 to 0.5% by mass. %, An aqueous alkali solution dissolved so as to be%.
  • the manufacturing method of a light shielding film may have another process.
  • Other steps are not particularly limited and may be appropriately selected depending on the purpose. Examples of the other steps include a substrate surface treatment step, a preheating step (pre-baking step), and a post-heating step (post-baking step).
  • pre-baking step a preheating step
  • post-baking step a post-heating step for curing the formed light-shielding film by heating and / or exposure may be performed.
  • the heating temperature in the preheating step and the postheating step is preferably 80 to 250 ° C.
  • the upper limit is more preferably 200 ° C. or less, and further preferably 150 ° C. or less.
  • the lower limit is preferably 90 ° C. or higher.
  • the heating time in the preheating step and the postheating step is preferably 30 to 300 seconds.
  • the upper limit is preferably 240 seconds, and more preferably 180 seconds or less.
  • the lower limit is preferably 60 seconds or more.
  • the light-shielding composition when it contains a non-photosensitive resin, it may be formed into a desired pattern by exposure and development after forming a photoresist film thereon. Then, if necessary, after removing the photoresist or the oxygen blocking film, the patterned light shielding film is obtained by heating and curing.
  • the thermosetting conditions vary depending on the resin. For example, when a light-shielding composition is obtained using a light-shielding composition containing polyamic acid, the light-shielding composition layer (containing polyamic acid) is 1 at 200 to 350 ° C. A method of obtaining polyimide by heating for 120 minutes (corresponding to a light shielding film) is common.
  • a solid-state imaging device includes the light shielding film.
  • the form in which the solid-state imaging device includes a light-shielding film is not particularly limited.
  • a plurality of photodiodes, polysilicon, and the like constituting a light receiving area of a solid-state imaging device (CCD image sensor, CMOS image sensor, etc.) on a substrate
  • the solid-state imaging device 100 includes a rectangular solid-state imaging element 101 and a transparent cover glass 103 that is held above the solid-state imaging element 101 and seals the solid-state imaging element 101. Yes. Further, a lens layer 111 is provided on the cover glass 103 with a spacer 104 interposed therebetween.
  • the lens layer 111 includes a support body 113 and a lens material 112. The lens layer 111 may have a configuration in which the support 113 and the lens material 112 are integrally formed.
  • the peripheral region of the lens layer 111 is shielded from light by providing a light shielding film 114.
  • the light shielding film according to the embodiment of the present invention can also be used as the light shielding film 114.
  • the material of the substrate used as the chip substrate 106 is not particularly limited, and a known material can be used.
  • An imaging unit 102 is provided at the center of the surface of the chip substrate 106. Further, when stray light is incident on the peripheral area of the imaging unit 102, dark current (noise) is generated from a circuit in the peripheral area. Therefore, the peripheral area is shielded from light by providing a light shielding film 115.
  • the light shielding film according to the above embodiment can also be used as the light shielding film 115.
  • a plurality of electrode pads 108 are provided on the surface edge of the chip substrate 106.
  • the electrode pad 108 is electrically connected to the imaging unit 102 via a signal line (not shown) provided on the surface of the chip substrate 106 (which may be a bonding wire).
  • External connection terminals 109 are provided on the back surface of the circuit board 107 at positions substantially below the electrode pads 108, respectively. Each external connection terminal 109 is connected to an electrode pad 108 via a through electrode 110 that vertically penetrates the multilayer substrate 105. Each external connection terminal 109 is connected to a control circuit that controls driving of the solid-state image sensor 101, an image processing circuit that performs image processing on an image signal output from the solid-state image sensor 101, and the like via a wiring (not shown). Has been.
  • the imaging unit 102 is configured by each unit provided on a substrate 204 such as a light receiving element 201, a color filter 202, and a microlens 203.
  • the color filter 202 includes a blue pixel 205b, a red pixel 205r, a green pixel 205g, and a black matrix 205bm.
  • the light shielding film according to the above embodiment can also be used as the black matrix 205bm.
  • a p-well layer 206 is formed on the surface layer of the substrate 204.
  • light receiving elements 201 which are n-type layers and generate and store signal charges by photoelectric conversion, are arranged in a square lattice pattern.
  • a vertical transfer path 208 made of an n-type layer is formed via a readout gate portion 207 on the surface layer of the p-well layer 206.
  • a vertical transfer path 208 belonging to an adjacent pixel is formed on the other side of the light receiving element 201 via an element isolation region 209 made of a p-type layer.
  • the read gate unit 207 is a channel region for reading signal charges accumulated in the light receiving element 201 to the vertical transfer path 208.
  • a gate insulating film 210 made of an ONO (Oxide-Nitride-Oxide) film is formed on the surface of the substrate 204.
  • a vertical transfer electrode 211 made of polysilicon or amorphous silicon is formed on the gate insulating film 210 so as to cover the vertical transfer path 208, the read gate portion 207, and the element isolation region 209.
  • the vertical transfer electrode 211 functions as a drive electrode that drives the vertical transfer path 208 to perform charge transfer, and a read electrode that drives the read gate unit 207 to read signal charges.
  • the signal charges are sequentially transferred from the vertical transfer path 208 to a horizontal transfer path (not shown) and an output unit (floating diffusion amplifier), and then output as a voltage signal.
  • a light shielding film 212 is formed on the vertical transfer electrode 211 so as to cover the surface thereof.
  • the light shielding film 212 has an opening at a position directly above the light receiving element 201 and shields light from other areas.
  • the light shielding film according to the above embodiment can also be used as the light shielding film 212.
  • an insulating film 213 made of BPSG (borophosphosilicate glass), an insulating film (passivation film) 214 made of P-SiN, and a transparent intermediate layer made of a planarizing film 215 made of transparent resin or the like are provided. ing.
  • the color filter 202 is formed on the intermediate layer.
  • the black matrix contains the light shielding film.
  • the black matrix may be contained in a color filter, a solid-state image sensor, and a liquid crystal display device.
  • As the black matrix those already described above; a black edge provided at the periphery of a display device such as a liquid crystal display device; a lattice shape between red, blue, and green pixels, and / or a stripe shape A black portion of the TFT; a dot-like and / or a linear black pattern for shielding a thin film transistor (TFT);
  • TFT thin film transistor
  • the production method of the black matrix is not particularly limited, but can be produced by the same method as the production method of the light shielding film. Specifically, a light-shielding composition is applied to a substrate to form a light-shielding composition layer, and exposure and development can be performed to produce a patterned light-shielding film (black matrix).
  • the thickness of the light shielding film used as the black matrix is preferably 0.1 to 4.0 ⁇ m.
  • the color filter according to the embodiment of the present invention contains a light shielding film.
  • the form in which the color filter contains a light-shielding film is not particularly limited, and examples thereof include a color filter including a substrate and a black matrix. That is, a color filter including red, green, and blue colored pixels formed in an opening of a black matrix formed in a substrate shape can be exemplified.
  • a color filter containing a black matrix can be produced, for example, by the following method.
  • a coating film (resin composition layer) of each color resin composition containing a pigment corresponding to each colored pixel of a color filter is formed in an opening of a patterned black matrix formed in a substrate shape.
  • a resin composition for each color Although a well-known resin composition can be used, it replaces with particle
  • the colored pixels can be formed in the openings of the black matrix by baking.
  • a color filter having red, green, and blue pixels can be manufactured by performing a series of operations using a resin composition for each color that contains red, green, and blue pigments.
  • the liquid crystal display device includes a light shielding film.
  • the form in which the liquid crystal display device contains the light shielding film is not particularly limited, but examples include a form containing a color filter containing the black matrix (light shielding film) already described.
  • liquid crystal display device for example, a mode including a pair of substrates arranged to face each other and a liquid crystal compound sealed between the substrates is cited.
  • the substrate is as already described as the substrate for the black matrix.
  • a polarizing plate / substrate / color filter / transparent electrode layer / alignment film / liquid crystal layer / alignment film / transparent electrode layer / TFT (Thin Film Transistor) The laminated body which contains an element / board
  • the liquid crystal display device is not limited to the above.
  • Display device (Junsho Ibuki) The liquid crystal display device described in the book “Industry Books Co., Ltd.” issued in 1989).
  • alumina beads having a particle diameter of 0.1 mm are added, and this is subjected to a wet pulverizer (batch type tabletop sand mill manufactured by Campe Co., Ltd.) for 360 minutes. And dispersed. Thereafter, the alumina beads were removed using a stainless steel filter having an opening of 44 ⁇ m, and then 1.4 parts by mass of pure water was further added to the obtained solution and stirred, so that the solid content of titanium nitride of 11% by mass was obtained. 1.7 parts by mass of an aqueous dispersion was obtained.
  • the titanium nitride aqueous dispersion was washed with ion exchange water using an ultrafiltration membrane, and then 0.06 parts by mass of an anion exchange resin (manufactured by Mitsubishi Chemical Corporation: SANUPC) was added to remove the dispersion. Ion treatment was performed. Thereafter, the obtained solution was subjected to a centrifuge (CR-21 parts manufactured by Hitachi Koki Co., Ltd.) and treated at a speed of 12,000 rpm for 1 hour, and then ion-exchanged water was added to the obtained precipitate. Thus, an aqueous dispersion sol of titanium nitride having a solid content concentration of 10% by mass was prepared.
  • an anion exchange resin manufactured by Mitsubishi Chemical Corporation: SANUPC
  • reaction vessel 25 parts by mass of methyltrimethoxysilane, 75 parts by mass of phenyltrimethoxysilane, 1050 parts by mass of methanol dispersion sol of titanium nitride of (a-1), and 100 parts by mass of ⁇ -butyrolactone were placed in a reaction vessel to prepare a solution. .
  • the reaction vessel was set in a temperature-adjustable bath, and 30 parts by mass of water and 1.0 part by mass of phosphoric acid were added dropwise to this solution while stirring so that the reaction temperature did not exceed 40 ° C. .
  • the dispersion liquid (bead mill, manufactured by Shinmaru Enterprises Co., Ltd., trade name “NPM”) and zirconia beads ( ⁇ 0.05 mm) were used to disperse the mixed solution, and the metal coated with silicon oxide A dispersion sol (B-2) containing an atomic nitride (titanium oxynitride) was obtained.
  • Dispersion sol 1000 parts by mass Polymerizable compound (T1) 25 parts by mass Alkali-soluble resin (J1) 12 parts by mass
  • Photoinitiator NCI-831 (made by ADEKA, corresponding to oxime ester compound) 12 parts by mass / surfactant: BYK333 (PGMEA (propylene glycol 1-monomethyl ether 2-acetate) 10% by mass solution) 10 parts by mass
  • the polymerizable compound (T1) and the alkali-soluble resin (J1) are compounds represented by the following formulas.
  • OXE01 (trade name “Irgacure OXE01”, manufactured by BASF, applicable to oxime ester compounds)
  • OXE02 (trade name “Irgacure OXE02” manufactured by BASF, corresponding to oxime ester compound)
  • PI-03 (corresponds to a compound represented by the following formula, an oxime ester compound)
  • the polymerizable compounds (T2) and (T3) in Table 2 are compounds represented by the following formulas.
  • n is 2.
  • alkali-soluble resins (J2) and (J3) in Table 2 are compounds represented by the following formula. ⁇ Alkali-soluble resin (J2)
  • the light-shielding composition layer after heating was exposed at an exposure amount of 1000 mJ / cm 2 with an i-line stepper exposure apparatus FPA-3000i5 + (manufactured by Canon Inc.) through a 10 ⁇ m line-and-space mask. Thereafter, the silicon wafer was placed on a horizontal rotary table of a spin shower developing machine (DW-30 type, manufactured by Chemitronics). Next, the light-shielding composition layer on the silicon wafer placed on the spin shower developing machine was subjected to exposure treatment at 23 ° C. for 60 seconds using CD-2000 (manufactured by Fuji Film Electronics Materials). Paddle development was performed to obtain a patterned light-shielding film.
  • FPA-3000i5 + manufactured by Canon Inc.
  • CD-2000 manufactured by Fuji Film Electronics Materials
  • the resulting patterned light shielding film was dried at 200 ° C. for 5 minutes.
  • an arbitrary 100 ⁇ m ⁇ 100 ⁇ m area was observed with a scanning electron microscope (SEM, Scanning Electron Microscope) (magnification 10,000 times), and the number of portions where pattern defects occurred was counted. It was. The smaller the number of pattern defects, the better.
  • SEM Scanning Electron Microscope
  • the light-shielding composition layer after heating was exposed at an exposure amount of 1000 mJ / cm 2 with an i-line stepper exposure apparatus FPA-3000i5 + (manufactured by Canon Inc.) to obtain a light-shielding film.
  • the heat resistance of the light shielding film was evaluated by the following method. First, the light shielding film was peeled off from the silicon wafer, and the maximum transmittance T 1 (%) at a wavelength of 400 to 700 nm was measured using a spectrophotometer. Next, the light shielding film produced in the same manner as described above was placed on a 300 ° C. hot plate together with the silicon wafer and heated for 1 hour.
  • the light-shielding composition layer after heating was exposed at an exposure amount of 1000 mJ / cm 2 with an i-line stepper exposure apparatus FPA-3000i5 + (manufactured by Canon Inc.) to obtain a light-shielding film.
  • the low reflectivity of the light shielding film was evaluated by the following method. Light of 400 to 700 nm was incident on the silicon wafer from the light shielding film side at an incident angle of 5 degrees, and the maximum reflectance was measured with a spectrometer UV4100 manufactured by Hitachi High Technology (unit:%). The smaller the value of the maximum reflectance, the more preferable the light-shielding film has low reflectivity. The results are shown in Table 3.
  • the light-shielding composition used in each example can produce a light-shielding film having excellent adhesion with a silicon substrate, and has excellent heat resistance and excellent performance. It was found to have low reflectivity.
  • the light shielding film obtained by curing the light shielding composition according to the embodiment of the present invention is suitable as a light shielding film for a solid-state imaging device. Further, the comparative light-shielding compositions 1 to 3 did not have the effects of the present invention, and the resulting light-shielding film was out of the practical range.
  • Examples 2B to 13B A solid-state imaging device was produced by the same method as in Example 1B except that the light-shielding compositions 2 to 13 were used in place of the light-shielding composition 1, and the produced solid-state imaging device was the same as in Example 1B. It had excellent performance.
  • the light-shielding composition used in each example can produce a light-shielding film having excellent adhesion to an alkali-free glass substrate, and has excellent heat resistance, and It was found to have excellent low reflectivity.
  • the light-shielding film obtained by curing the light-shielding composition according to the embodiment of the present invention is suitable as a light-shielding film used for color filters, liquid crystal display devices, and solid-state imaging devices.
  • the comparative light-shielding compositions 1 to 3 did not have the effects of the present invention, and the resulting light-shielding film was out of the practical range.
  • Example 14B Production and evaluation of color filter
  • a light-shielding film black matrix
  • a photomask having a 20 ⁇ m line pattern was used for the exposure.
  • a red (R) resin having a 100 ⁇ m linear pattern in the same manner as the black matrix produced above using the following red (R) resin composition R-1 in the opening of the light shielding film. A colored pattern was formed.
  • green (G) resin composition G-1 is used to give a green (G) coloring pattern
  • blue (B) resin composition B-1 is used to give a blue (B) coloring pattern.
  • Color patterns were sequentially formed to produce a color filter containing a black matrix.
  • the produced color filter was processed with an ITO (Indium Tin Oxide) transparent electrode, an alignment film, and the like to provide a liquid crystal display device. The image quality of the obtained display device was good.
  • ITO Indium Tin Oxide
  • Examples 15B to 26B A black matrix was prepared in the same manner as in Example 14B except that the light-shielding compositions 2 to 13 were used in place of the light-shielding composition 1, and a color filter containing the black matrix was produced.
  • the color filter had excellent performance as in Example 14B.
  • Example 27 The following components were mixed to obtain a light-shielding composition 14.
  • the light-shielding composition 14 was applied on a silicon wafer (silicon substrate) so as to have a dry film thickness of 1.5 ⁇ m to form a light-shielding composition layer.
  • the light-shielding composition layer was baked at 100 ° C. for 2 minutes. Thereafter, the light-shielding composition layer was further heated at 140 ° C. for 20 minutes.
  • a positive photoresist “FHi622BC” (manufactured by FUJIFILM Electronics Materials Co., Ltd.) is applied on the light-shielding composition layer, pre-baked, and a 0.8 ⁇ m-thick photo film is formed on the light-shielding composition layer.
  • a resist layer was formed.
  • the photoresist layer was subjected to pattern exposure with an exposure amount of 350 mJ / cm 2 through a 20 ⁇ m line and space mask using an i-line stepper (manufactured by Canon Inc.). Thereafter, the exposed photoresist layer was developed with an aqueous tetramethylammonium hydroxide solution to obtain a patterned resist film, and at the same time, the light-shielding composition layer was etched to form a pattern on the light-shielding composition layer. .
  • the stripping time is 120 seconds
  • the patterned resist film is removed, and further cleaning with pure water and spin drying are performed.
  • a patterned light-shielding composition layer was obtained.
  • the patterned light-shielding composition layer was subjected to dehydration baking at 100 ° C. for 2 minutes, and further baked at 300 ° C. for 120 minutes to obtain a patterned light-shielding film.
  • the light-shielding composition 14 was apply
  • the silicon wafer provided with the light-shielding composition layer is placed on a 300 ° C. hot plate so as to be in contact with the substrate surface (the surface opposite to the light-shielding composition layer), and heated for 120 minutes to shield it. A membrane was obtained.
  • the resulting light-shielding film was peeled from the silicon wafer was measured maximum transmittance T 1 (%) at a wavelength of 400 ⁇ 700 nm using a spectrophotometer.
  • the light shielding film produced in the same manner as described above was placed on a 300 ° C. hot plate together with the silicon wafer and heated for 1 hour.
  • the light-shielding film after heating for 1 hour was peeled from the silicon wafer, and the maximum transmittance T 2 (%) was measured in the same manner as described above.
  • the increase rate (%) of the maximum transmittance was obtained from T 1 and T 2 by the following formula. As a result, it was 0%.
  • the light-shielding composition 14 was apply
  • the silicon wafer provided with the light-shielding composition layer is placed on a 300 ° C. hot plate so as to be in contact with the substrate surface (the surface opposite to the light-shielding composition layer), and heated for 120 minutes to shield it.
  • a membrane was obtained.
  • Light of 400 to 700 nm was incident on the silicon wafer from the light shielding film side at an incident angle of 5 degrees, and the maximum reflectance was measured with a spectrometer UV4100 manufactured by Hitachi High Technology (unit:%). As a result, the light reflectance was 3%.
  • Example 7 A comparative light-shielding composition 4 was prepared and evaluated in the same manner as in Example 27 except that the dispersion sol (A-1) was changed to (B-1). As a result, the number of missing patterns was 10, the increase rate of the maximum transmittance was 11%, and the light reflectance was 8%, which was out of the practical range as a light shielding film.
  • Titanium nitride particles TiN-1 (corresponding to titanium nitride) were produced using TC-200 (manufactured by Toho Tech, average primary particle diameter of 20 nm) as Ti particles.
  • the Ti particles were formed into Ti nanoparticles by plasma treatment in Ar gas.
  • the Ti nanoparticles after the plasma treatment were allowed to stand for 24 hours under an Ar gas atmosphere at an O 2 concentration of 50 ppm or less and 30 ° C., and then O 2 gas was introduced into the Ar atmosphere so that the O 2 concentration was 100 ppm. In the state, it was left to stand at 30 ° C. for 24 hours (pretreatment of Ti particles).
  • the obtained Ti nanoparticles were classified using a “TTSP separator (trade name)” manufactured by Hosokawa Micron under the conditions of a yield of 10% to obtain a powder of Ti nanoparticles.
  • the average primary particle diameter of the obtained powder was 120 nm when the average particle diameter of 100 particles was determined by arithmetic average by TEM (transmission electron microscope) observation.
  • the titanium nitride particles TiN-1 were produced using an apparatus according to the black composite fine particle production apparatus described in FIG. 1 of International Publication No. 2010/147098.
  • a high frequency voltage of about 4 MHz and about 80 kVA is applied to the high frequency oscillation coil of the plasma torch, and argon gas 50 L / min and nitrogen as plasma gas are supplied from the plasma gas supply source.
  • a mixed gas of 50 L / min was supplied to generate an argon-nitrogen thermal plasma flame in the plasma torch.
  • 10 L / min carrier gas was supplied from the spray gas supply source of the material supply apparatus. Then, the titanium particles obtained as described above were supplied into the thermal plasma flame in the plasma torch together with the argon gas as the carrier gas, evaporated in the thermal plasma flame, and highly dispersed in the gas phase state. . Further, nitrogen was used as a gas supplied into the chamber by the gas supply device.
  • the flow rate in the chamber at this time was 5 m / sec, and the supply amount was 1000 L / min.
  • the pressure in the cyclone was 50 kPa, and the supply rate of each raw material from the chamber to the cyclone was 11 m / s (average value). In this way, titanium nitride particles TiN-1 were obtained.
  • X-ray diffraction measurement of titanium nitride particles TiN-1 was performed. The measurement was carried out by packing a powder sample in an aluminum standard sample holder and measuring by a wide-angle X-ray diffraction method (trade name “RU-200R” manufactured by Rigaku Corporation). As measurement conditions, the X-ray source is CuK ⁇ ray, the output is 50 kV / 200 mA, the slit system is 1 ° -1 ° -0.15 mm-0.45 mm, the measurement step (2 ⁇ ) is 0.02 °, and the scan speed is It was 2 ° / min.
  • the diffraction angle of the peak derived from the TiN (200) plane observed in the vicinity of the diffraction angle 2 ⁇ (42.6 °) was measured.
  • the peak diffraction angle derived from the TiN (200) plane was 42.64 °.
  • a light-shielding composition TiN-1 was prepared in the same manner except that the dispersion sol (TiN-1) was used instead of the dispersion sol (A-1). .
  • the same evaluation as in Example 1 was performed using the light-shielding composition TiN-1, and the same result as in Example 1 was obtained.
  • Titanium nitride particles TiN-2 were produced in the same manner as titanium nitride particles TiN-1, except that the feed rate of each raw material from the chamber to the cyclone was changed to 8 m / s (average value).
  • the peak diffraction angle derived from the TiN (200) plane was 42.61 °.
  • a light-shielding composition TiN-2 was prepared in the same manner except that the dispersion sol (TiN-2) was used instead of the dispersion sol (A-1). .
  • the light-shielding composition TiN-2 was used and the same evaluation as in Example 1 was performed, the same result as in Example 1 was obtained.
  • Titanium nitride particles TiN-3 were produced in the same manner as titanium nitride particles TiN-1 except that the feed rate of each raw material from the chamber to the cyclone was changed to 13 m / s (average value).
  • the peak diffraction angle derived from the TiN (200) plane was 42.78 °.
  • Titanium nitride particles TiN-4 were produced in the same manner as titanium nitride particles TiN-1 except that the feed rate of each raw material from the chamber to the cyclone was changed to 14.5 m / s (average value).
  • the peak diffraction angle derived from the TiN (200) plane was 42.85 °.
  • a light-shielding composition TiN-4 was prepared in the same manner except that the dispersion sol (TiN-4) was used instead of the dispersion sol (A-1). .
  • the light-shielding composition TiN-4 was evaluated in the same manner as in Example 1, the adhesion of the obtained light-shielding film to the silicon substrate and the glass substrate was the same as in Example 1.
  • the heat resistance of the light-shielding film was inferior to that of Example 1, but was practically satisfactory.
  • the light reflectance of the light shielding film was 4%.
  • Titanium nitride particles TiN-5 were produced in the same manner as titanium nitride particles TiN-1 except that the feed rate of each raw material from the chamber to the cyclone was changed to 20 m / s (average value).
  • the peak diffraction angle derived from the TiN (200) plane was 43.5 °.
  • a light-shielding composition TiN-5 was prepared in the same manner except that the dispersion sol (TiN-5) was used instead of the dispersion sol (A-1). .
  • the adhesion (number of chipped patterns) of the obtained light-shielding film to the silicon substrate and the glass substrate was 2 Met.
  • the heat resistance of the light-shielding film was inferior to that of the light-shielding composition TiN-4, but it was at a level causing no practical problems.
  • the light reflectance of the light shielding film was 4%.
  • Example (X-1) In the light-shielding composition 1, instead of the polymerizable compound (T1), TO1382 manufactured by Toagosei Co. was used, and instead of 12 parts by mass of the alkali-soluble resin (J1), 6 parts by mass of the following resin A (in terms of solid content) ) And 6 parts by mass of resin B (in terms of solid content), and the dispersion sol (X-1) was used instead of the dispersion sol (A-1). A light-shielding composition (X-1) was prepared.
  • the dispersion sol (X-1) was prepared by adding 1000 parts by mass of ⁇ -butyrolactone, 700 parts by mass of ⁇ -butyrolactone and N-methyl-2 at the time of the second addition of ⁇ -butyrolactone in the synthesis of the dispersion sol (A-1). -It is changed to 300 parts by mass of pyrrolidone.
  • the light-shielding composition (X-1) was evaluated in the same manner as in Example 1. As a result, an evaluation result equivalent to that in Example 1 was obtained.
  • Resin B 176.7 g of 3′-diaminodiphenylsulfone and 18.6 g of bis (3-aminopropyl) tetramethyldisiloxane were charged together with 2667 g of ⁇ -butyrolactone and 527 g of N-methyl-2-pyrrolidone. 439.1 g of 4,4′-biphenyltetracarboxylic dianhydride was added and reacted at 70 ° C. for 3 hours, followed by addition of 2.2 g of phthalic anhydride and further reaction at 70 ° C. for 2 hours. A weight% polyamic acid solution (resin B solution) was obtained.
  • Example (X-2) In the light-shielding composition 1, except that a mixture having a mixing ratio of 50% by mass / 50% by mass using a polymerizable compound (TR-1) and a polymerizable compound (T1) having the following structure as the polymerizable compound was used. A light-shielding composition (X-2) was produced in the same manner as the light-shielding composition 1. The light-shielding composition (X-2) was evaluated in the same manner as in Example 1. As a result, an evaluation result equivalent to that in Example 1 was obtained. For the production method of the polymerizable compound (TR-1), JP-A No. 2009-169049 was referred to.
  • DESCRIPTION OF SYMBOLS 100 Solid-state imaging device 101 ... Solid-state image sensor 102 ... Imaging part 103 ... Cover glass 104 ... Spacer 105 ... Laminated substrate 106 ... Chip substrate 107 ... Circuit board 108 ... Electrode pad 109 ... External connection terminal 110 ... Penetration electrode 111 ... Lens layer 112 ... Lens material 113 ... Supports 114, 115 ... Light shielding film 201 ... Light receiving element 202 ... Color filter 201 ... Light receiving element 202 ... Color filter 203 ... Micro lens 204 ... Substrate 205b ... Blue pixel 205r ... Red pixel 205g ... Green pixel 205bm ... Black matrix 206... P well layer 207... Readout gate portion 208... Vertical transfer path 209. Over gate insulating film 211 ... vertical transfer electrodes 212 ... light shielding film 213 ... insulating film 215 ... flattening film

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

La présente invention aborde le problème consistant à fournir une composition pare-lumière susceptible de former des films pare-lumière présentant une excellente adhérence aux substrats, et de former des films pare-lumière présentant une excellente résistance à la chaleur et un facteur de réflexion extrêmement bas. Un autre problème consiste à fournir un film pare-lumière, un élément d'imagerie solide, un filtre couleur et un dispositif d'affichage à cristaux liquides. La composition pare-lumière de la présente invention comprend : des particules contenant un nitrure d'un atome métallique ; et au moins un ingrédient choisi dans le groupe constitué par des composés polymérisables et des résines. Dans les particules, le rapport entre le nombre d'atomes métalliques présents dans la surface des particules et le nombre d'atomes de silicium présents dans la surface des particules est de 1,0 ou moins, les nombres étant déterminés par une analyse par spectroscopie électronique aux rayons X.
PCT/JP2017/028778 2016-08-22 2017-08-08 Composition pare-lumière, film pare-lumière, élément d'imagerie solide, filtre couleur, et dispositif d'affichage à cristaux liquides WO2018037913A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018535589A JP6694513B2 (ja) 2016-08-22 2017-08-08 遮光性組成物、遮光膜、固体撮像素子、カラーフィルタ、及び、液晶表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-161739 2016-08-22
JP2016161739 2016-08-22

Publications (1)

Publication Number Publication Date
WO2018037913A1 true WO2018037913A1 (fr) 2018-03-01

Family

ID=61246606

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/028778 WO2018037913A1 (fr) 2016-08-22 2017-08-08 Composition pare-lumière, film pare-lumière, élément d'imagerie solide, filtre couleur, et dispositif d'affichage à cristaux liquides

Country Status (3)

Country Link
JP (1) JP6694513B2 (fr)
TW (1) TWI772320B (fr)
WO (1) WO2018037913A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019171902A1 (fr) * 2018-03-08 2019-09-12 富士フイルム株式会社 Composition durcissable, film durci, élément optique, élément d'imagerie à semi-conducteurs, et filtre coloré
JP2020019692A (ja) * 2018-08-03 2020-02-06 三菱マテリアル電子化成株式会社 窒化ジルコニウム膜及びその製造方法
JP2020166116A (ja) * 2019-03-29 2020-10-08 日鉄ケミカル＆マテリアル株式会社 遮光膜及びそれを得るための感光性樹脂組成物、遮光膜の製造方法
CN112400124A (zh) * 2018-09-11 2021-02-23 富士胶片株式会社 遮光性组合物、固化膜、滤色器、遮光膜、固体摄像元件、图像显示装置
JPWO2021059860A1 (fr) * 2019-09-27 2021-04-01
TWI794099B (zh) * 2022-01-11 2023-02-21 南韓商三星電機股份有限公司 透鏡以及包括其之透鏡組合件
KR20230134624A (ko) * 2021-06-15 2023-09-21 미츠비시 가스 가가쿠 가부시키가이샤 수지 조성물, 수지 시트, 다층 프린트 배선판, 및 반도체 장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111432097A (zh) * 2019-01-09 2020-07-17 三赢科技（深圳）有限公司 镜头模组及电子装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195160A (ja) * 1984-03-16 1985-10-03 Tokuyama Soda Co Ltd 複合シ−ト
JPH03287654A (ja) * 1990-04-05 1991-12-18 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置
JPH0496929A (ja) * 1990-08-14 1992-03-30 Shin Etsu Chem Co Ltd エポキシ樹脂組成物及び半導体装置
JPH0826707A (ja) * 1994-07-11 1996-01-30 Shin Etsu Chem Co Ltd 窒化アルミニウム粉末
JP2000143808A (ja) * 1998-11-17 2000-05-26 Fuji Kobunshi Kogyo Kk 熱伝導性・電気絶縁性シリコーンゲル組成物
JP2004143195A (ja) * 2002-10-22 2004-05-20 Mitsui Chemicals Inc 放熱性樹脂シート
JP2010111864A (ja) * 2008-10-08 2010-05-20 Panasonic Corp プリプレグ及びその製造方法とこれを用いたプリント配線板
JP2014031484A (ja) * 2012-08-06 2014-02-20 Gunze Ltd 絶縁性熱伝導フィラー分散組成物
WO2014203875A1 (fr) * 2013-06-19 2014-12-24 デクセリアルズ株式会社 Feuille thermoconductrice et procédé pour fabriquer une feuille thermoconductrice
WO2014208352A1 (fr) * 2013-06-25 2014-12-31 味の素株式会社 Composition de résine
JP2015105375A (ja) * 2013-12-03 2015-06-08 株式会社Adeka 樹脂組成物、熱伝導性硬化物、ケイ素化合物、シランカップリング剤組成物及び担持体
JP2015117302A (ja) * 2013-12-18 2015-06-25 三菱マテリアル株式会社 黒色酸窒化チタン粉末及びこれを用いた半導体封止用樹脂化合物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013031753A1 (fr) * 2011-08-29 2013-03-07 東レ株式会社 Composition de résine colorée et substrat de matrice noire en résine
WO2015005310A1 (fr) * 2013-07-10 2015-01-15 富士フイルム株式会社 Composition et film bloquant la lumière et leur procédé de production
KR20170085576A (ko) * 2015-02-09 2017-07-24 후지필름 가부시키가이샤 안료 분산 조성물 및 그 제조 방법, 중합성 조성물, 차광막, 그리고 고체 촬상 장치

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195160A (ja) * 1984-03-16 1985-10-03 Tokuyama Soda Co Ltd 複合シ−ト
JPH03287654A (ja) * 1990-04-05 1991-12-18 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置
JPH0496929A (ja) * 1990-08-14 1992-03-30 Shin Etsu Chem Co Ltd エポキシ樹脂組成物及び半導体装置
JPH0826707A (ja) * 1994-07-11 1996-01-30 Shin Etsu Chem Co Ltd 窒化アルミニウム粉末
JP2000143808A (ja) * 1998-11-17 2000-05-26 Fuji Kobunshi Kogyo Kk 熱伝導性・電気絶縁性シリコーンゲル組成物
JP2004143195A (ja) * 2002-10-22 2004-05-20 Mitsui Chemicals Inc 放熱性樹脂シート
JP2010111864A (ja) * 2008-10-08 2010-05-20 Panasonic Corp プリプレグ及びその製造方法とこれを用いたプリント配線板
JP2014031484A (ja) * 2012-08-06 2014-02-20 Gunze Ltd 絶縁性熱伝導フィラー分散組成物
WO2014203875A1 (fr) * 2013-06-19 2014-12-24 デクセリアルズ株式会社 Feuille thermoconductrice et procédé pour fabriquer une feuille thermoconductrice
WO2014208352A1 (fr) * 2013-06-25 2014-12-31 味の素株式会社 Composition de résine
JP2015105375A (ja) * 2013-12-03 2015-06-08 株式会社Adeka 樹脂組成物、熱伝導性硬化物、ケイ素化合物、シランカップリング剤組成物及び担持体
JP2015117302A (ja) * 2013-12-18 2015-06-25 三菱マテリアル株式会社 黒色酸窒化チタン粉末及びこれを用いた半導体封止用樹脂化合物

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7083887B2 (ja) 2018-03-08 2022-06-13 富士フイルム株式会社 硬化性組成物、硬化膜、光学素子、固体撮像素子、カラーフィルタ
JPWO2019171902A1 (ja) * 2018-03-08 2021-02-04 富士フイルム株式会社 硬化性組成物、硬化膜、光学素子、固体撮像素子、カラーフィルタ
WO2019171902A1 (fr) * 2018-03-08 2019-09-12 富士フイルム株式会社 Composition durcissable, film durci, élément optique, élément d'imagerie à semi-conducteurs, et filtre coloré
JP2020019692A (ja) * 2018-08-03 2020-02-06 三菱マテリアル電子化成株式会社 窒化ジルコニウム膜及びその製造方法
JP7212471B2 (ja) 2018-08-03 2023-01-25 三菱マテリアル電子化成株式会社 窒化ジルコニウム膜の製造方法
CN112400124A (zh) * 2018-09-11 2021-02-23 富士胶片株式会社 遮光性组合物、固化膜、滤色器、遮光膜、固体摄像元件、图像显示装置
US20210108103A1 (en) * 2018-09-11 2021-04-15 Fujifilm Corporation Light-shielding composition, cured film, color filter, light-shielding film, solid-state imaging element, and image display device
CN112400124B (zh) * 2018-09-11 2022-08-12 富士胶片株式会社 遮光性组合物、固化膜、滤色器、遮光膜、固体摄像元件、图像显示装置
US11624001B2 (en) 2018-09-11 2023-04-11 Fujifilm Corporation Light-shielding composition, cured film, color filter, light-shielding film, solid-state imaging element, and image display device
TWI799630B (zh) * 2018-09-11 2023-04-21 日商富士軟片股份有限公司 遮光性組成物、硬化膜、濾色器、遮光膜、固體攝像元件、圖像顯示裝置
JP2020166116A (ja) * 2019-03-29 2020-10-08 日鉄ケミカル＆マテリアル株式会社 遮光膜及びそれを得るための感光性樹脂組成物、遮光膜の製造方法
JP7359559B2 (ja) 2019-03-29 2023-10-11 日鉄ケミカル＆マテリアル株式会社 遮光膜及びそれを得るための感光性樹脂組成物、遮光膜の製造方法
WO2021059860A1 (fr) * 2019-09-27 2021-04-01 富士フイルム株式会社 Composition photosensible, film durci, filtre coloré, film de blocage de lumière, élément optique, élément d'imagerie à semi-conducteurs et unité de phare
JPWO2021059860A1 (fr) * 2019-09-27 2021-04-01
JP7301143B2 (ja) 2019-09-27 2023-06-30 富士フイルム株式会社 感光性組成物、硬化膜、カラーフィルタ、遮光膜、光学素子、固体撮像素子、赤外線センサ、ヘッドライトユニット
KR20230134624A (ko) * 2021-06-15 2023-09-21 미츠비시 가스 가가쿠 가부시키가이샤 수지 조성물, 수지 시트, 다층 프린트 배선판, 및 반도체 장치
KR102656757B1 (ko) * 2021-06-15 2024-04-11 미츠비시 가스 가가쿠 가부시키가이샤 수지 조성물, 수지 시트, 다층 프린트 배선판, 및 반도체 장치
TWI794099B (zh) * 2022-01-11 2023-02-21 南韓商三星電機股份有限公司 透鏡以及包括其之透鏡組合件

Also Published As

Publication number Publication date
TW201831528A (zh) 2018-09-01
JPWO2018037913A1 (ja) 2019-06-20
TWI772320B (zh) 2022-08-01
JP6694513B2 (ja) 2020-05-13

Similar Documents

Publication Publication Date Title
JP6694513B2 (ja) 遮光性組成物、遮光膜、固体撮像素子、カラーフィルタ、及び、液晶表示装置
JP5398759B2 (ja) 遮光膜及びその製造方法、並びに固体撮像素子
JP6745869B2 (ja) 組成物、組成物の製造方法、硬化膜、カラーフィルタ、遮光膜、固体撮像素子および画像表示装置
JP7016403B2 (ja) 硬化膜の製造方法、固体撮像素子の製造方法
KR102149158B1 (ko) 조성물, 경화막, 컬러 필터, 차광막, 고체 촬상 장치 및 화상 표시 장치
JP7126537B2 (ja) 着色組成物、着色組成物の製造方法、カラーフィルタ、パターン形成方法、固体撮像素子、および、画像表示装置
JPWO2018061583A1 (ja) 組成物、硬化膜、カラーフィルタ、固体撮像素子、赤外線センサ、近赤外線センサ、及び、近接センサ
JP6994044B2 (ja) 硬化膜の製造方法、固体撮像素子の製造方法、画像表示装置の製造方法
WO2017221620A1 (fr) Composition durcissable, film durci, filtre de couleur, film de blocage de lumière, élément d'imagerie à l'état solide, dispositif d'affichage d'image, procédé de production de film durci et composé thiol polyfonctionnel
JPWO2018135249A1 (ja) 硬化性組成物、硬化膜、カラーフィルタ、遮光膜、固体撮像素子、画像表示装置、及び、硬化膜の製造方法
WO2018139186A1 (fr) Composition pouvant durcir, composé, film durci, procédé de fabrication de film durci, procédé de fabrication de filtre coloré, dispositif d'imagerie à semi-conducteur et capteur infrarouge
WO2018061644A1 (fr) Particules à teneur en nitrure de métal, composition de dispersion, composition durcissable, film durci, procédés de fabrication de ceux-ci, filtre coloré, élément d'imagerie à semi-conducteurs, dispositif d'imagerie à semi-conducteurs, et capteur de rayons infrarouges
KR102217044B1 (ko) 경화성 조성물, 경화막, 컬러 필터, 고체 촬상 소자, 적외선 센서, 경화막의 제조 방법, 및 컬러 필터의 제조 방법
WO2018173692A1 (fr) Composition durcissable, film durci, film pare-lumière, élément d'imagerie à l'état solide, dispositif d'imagerie à l'état solide et procédé de fabrication d'un film durci
WO2019065128A1 (fr) Composition photodurcissable, stratifié et élément d'imagerie à l'état solide
WO2019065456A1 (fr) Composition durcissable, film durci, dispositif d'imagerie à semi-conducteurs et procédé de fabrication de film durci
JP7083887B2 (ja) 硬化性組成物、硬化膜、光学素子、固体撮像素子、カラーフィルタ
WO2024070942A1 (fr) Composition, film bloquant la lumière, élément d'imagerie à semi-conducteurs, dispositif d'affichage d'image, capteur infrarouge et procédé de fabrication de film durci
JP2023035083A (ja) 組成物、遮光膜、固体撮像素子、画像表示装置、硬化膜の製造方法
TW202417896A (zh) 組成物、遮光膜、固體攝像元件、圖像顯示裝置、紅外線感測器、硬化膜之製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17843398

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018535589

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17843398

Country of ref document: EP

Kind code of ref document: A1