WO2018030516A1 - Dispositif de traitement de substrat, procédé de traitement de substrat et moyen de stockage - Google Patents

Dispositif de traitement de substrat, procédé de traitement de substrat et moyen de stockage Download PDF

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Publication number
WO2018030516A1
WO2018030516A1 PCT/JP2017/029096 JP2017029096W WO2018030516A1 WO 2018030516 A1 WO2018030516 A1 WO 2018030516A1 JP 2017029096 W JP2017029096 W JP 2017029096W WO 2018030516 A1 WO2018030516 A1 WO 2018030516A1
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Prior art keywords
substrate
solvent
unit
exhaust
flow rate
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PCT/JP2017/029096
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English (en)
Japanese (ja)
Inventor
祐希 吉田
央 河野
明徳 相原
興司 香川
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東京エレクトロン株式会社
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Priority to JP2018533563A priority Critical patent/JP6728358B2/ja
Publication of WO2018030516A1 publication Critical patent/WO2018030516A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a technique for performing a process of filling a sublimation substance in a concave portion of a pattern formed on a substrate.
  • the pattern aspect ratio (height / width) has been increasing with the miniaturization of patterns formed on substrates such as semiconductor wafers.
  • the aspect ratio is larger than a certain value, pattern collapse (collapse of convex portions constituting the pattern) is likely to occur during the drying process performed after the liquid process during semiconductor formation on the substrate.
  • a step of replacing the IPA in the recesses of the pattern with a solution of the sublimation substance, and then evaporating the solvent in the sublimation substance solution, the inside of the pattern recesses with a solid state sublimation substance is performed (see Patent Document 1). This method is effective in preventing pattern collapse due to the surface tension of the liquid.
  • spots may be formed on the substrate surface, and the pattern may not be completely covered with the sublimable material film, and a part of the pattern may be exposed. This leads to pattern collapse and must be avoided.
  • the present invention provides a technique capable of forming a film of a sublimable substance on the entire substrate.
  • a substrate processing apparatus that performs a process of filling a sublimation substance in a concave portion of a pattern formed on a substrate, wherein the substrate holding part that holds the substrate and the sublimation substance are dissolved.
  • a processing liquid supply unit that supplies at least one type of solvent-containing processing liquid containing a solvent that can be supplied to the substrate held by the substrate holding unit; a chamber that houses the substrate holding unit and the processing liquid supply unit; A gas supply mechanism for supplying a gas to the inside of the chamber; an exhaust mechanism for exhausting an atmosphere inside the chamber; and a solvent-containing processing liquid in which the processing liquid supply unit supplies the solvent-containing processing liquid to the substrate.
  • the flow rate or flow velocity of the airflow flowing through the space around the substrate is increased by controlling at least one of the gas supply mechanism and the exhaust mechanism.
  • the substrate processing apparatus having a stream control section for air flow changes, is provided.
  • a substrate holding unit that holds a substrate
  • a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holding unit, the substrate holding unit, and the processing Formed on the substrate using a substrate processing apparatus
  • a substrate processing apparatus comprising: a chamber that houses a liquid supply unit; a gas supply mechanism that supplies a gas to the inside of the chamber; and an exhaust mechanism that exhausts the atmosphere inside the chamber.
  • the computer when executed by a computer for controlling the operation of the substrate processing apparatus, controls the substrate processing apparatus to execute the substrate processing method. Is provided.
  • the solvent concentration in the space above the substrate can be kept low, a sublimation substance film can be formed on the entire substrate.
  • FIG. 1 It is a figure showing a schematic structure of a substrate processing system concerning this embodiment. It is a figure which shows schematic structure of the washing
  • FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment.
  • the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
  • the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3.
  • the carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
  • the loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.
  • the transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside.
  • the substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the substrate holding mechanism. Do.
  • the processing station 3 is provided adjacent to the transfer unit 12.
  • the processing station 3 includes a transport unit 15 and a plurality of processing units 16.
  • the plurality of processing units 16 are provided side by side on the transport unit 15.
  • the transfer unit 15 includes a substrate transfer device 17 inside.
  • the substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using the substrate holding mechanism. I do.
  • the processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
  • the substrate processing system 1 includes a control device 4.
  • the control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19.
  • the storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1.
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
  • Such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
  • Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14.
  • the wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
  • the wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier platform 11 by the substrate transfer device 13.
  • the processing unit 16 included in the substrate processing system 1 includes a cleaning unit 16A and a bake unit 16B. 1 does not distinguish between the cleaning unit 16A and the bake unit 16B.
  • the processing unit 16 on the upper side in FIG. 1 of the processing station 3 is the cleaning unit 16A, and the processing unit 16 on the lower side in FIG. Unit 16B can be used.
  • the cleaning unit 16A includes a chamber (unit housing) 20A.
  • a substrate holding mechanism 30 is provided in the chamber 20A.
  • the substrate holding mechanism 30 includes a holding part 31, a support part 32, and a driving part 33.
  • the substrate holding mechanism 30 rotates the support unit 32 by rotating the support unit 32 using the drive unit 33, thereby rotating the wafer W held by the support unit 31. .
  • the processing liquid is supplied from the processing liquid supply unit 40 to the wafer W held by the substrate holding mechanism 30.
  • the treatment liquid supply unit 40 includes a chemical liquid nozzle 41 that supplies a chemical liquid (for example, DHF, SC-1 and the like), a rinse nozzle 42 that supplies a rinsing liquid (for example, pure water (DIW)), and a solvent that can dissolve a sublimable substance (for example, a solvent nozzle 43 for supplying isopropyl alcohol (IPA)) and a sublimable substance solution nozzle 44 for supplying a sublimable substance solution (for example, an ammonium silicofluoride dissolved in a solvent, here, IPA) are provided.
  • a chemical liquid for example, DHF, SC-1 and the like
  • DIW pure water
  • a solvent that can dissolve a sublimable substance for example, a solvent nozzle 43 for supplying isopropyl alcohol (IPA)
  • IPA isopropyl alcohol
  • IPA sublimable substance solution nozzle 44
  • the nozzles 41 to 44 are connected to a corresponding processing liquid supply source (liquid storage tank or factory power) (not shown) via a supply line (not shown) connected thereto.
  • a processing liquid supply source liquid storage tank or factory power
  • Each supply line is provided with a flow rate adjusting device (not shown) such as an on-off valve or a flow rate control valve.
  • the nozzles 41 to 44 are attached to the tip of the nozzle arm 45. By operating the nozzle arm 45, the nozzles 41 to 44 can be moved between a processing position directly above the center of the wafer W and a standby position outside the wafer W.
  • FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20A.
  • a flow rate adjusting valve such as a fan 23 and a damper 24 is interposed in the duct 22 of the FFU 21.
  • the air is filtered by a filter such as a ULPA filter 25 provided below the outlet 22b of the duct 22, and then flows downward into the internal space of the chamber 20A.
  • An FFU 21 and a gas supply unit 27 are provided as a gas supply mechanism for supplying gas into the chamber 20A.
  • a rectifying plate 26 in the form of a punching plate is provided on the upper portion of the chamber 20A.
  • the current plate 26 adjusts the distribution of clean air discharged downward from the FFU 21 into the chamber 20A.
  • the gas supply unit 27 supplies gas to the space between the FFU 21 and the rectifying plate 26.
  • the gas supply unit 27 includes a gas supply nozzle 27a.
  • a clean, low-humidity gas such as nitrogen gas or dry air is supplied to the gas supply nozzle 27a from a gas supply source 27b through a gas supply line 27d provided with a flow control device 27c such as an on-off valve or a flow control valve. Is done.
  • the FFU 21 and the gas supply unit 27 are examples of the gas supply mechanism, and the installation position, shape, gas supply amount, etc. of the gas supply mechanism may have various forms corresponding to the device structure. .
  • the collection cup 50 is disposed so as to surround the holding portion 31 of the substrate holding mechanism 30.
  • the collection cup 50 collects the processing liquid scattered from the wafer W.
  • a drainage port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drainage port 51 to the outside of the processing unit 16.
  • An exhaust port 52 for discharging the atmosphere inside the recovery cup 50 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50.
  • the exhaust through the exhaust port 52 is described as “cup exhaust (C-EXH)”.
  • An exhaust path 53 is connected to the exhaust port 52 as an exhaust mechanism for exhausting the atmosphere inside the chamber 20A.
  • the atmosphere in the recovery cup 50 is always sucked through the exhaust path 53 and the exhaust port 52, and the recovery cup 50 has a negative pressure. For this reason, after being supplied from the FFU 21, the clean flow that flows downward through the current plate 26 and reaches the space near the wafer W above the wafer W (hereinafter, referred to as “the upper space near the wafer” for the sake of simplicity). Air is drawn into the recovery cup 50 through the space between the peripheral wall of the upper opening of the recovery cup 50 and the outer peripheral edge of the wafer W (see arrow F in FIG. 2). The airflow suppresses the atmosphere (chemical solution atmosphere, solvent atmosphere) derived from the processing solution supplied to the wafer W from staying in the upper space near the wafer.
  • the exhaust passage 53 branches into two branch passages 53a and 53b, and merges into one exhaust passage 53 again.
  • the downstream end of the exhaust path 53 is connected to a decompressed factory exhaust system duct (not shown).
  • One branch path 53a is provided with a normally open on-off valve 54a
  • the other branch path 53b is provided with a normally closed on-off valve 54b.
  • a flow rate adjusting valve 54 such as a damper or a butterfly valve may be provided in the exhaust path 53 as schematically shown in FIG.
  • the flow rate of the exhaust gas flowing through the exhaust passage 53 can be adjusted by adjusting the opening degree of the flow rate adjusting valve 54.
  • the flow rate (or flow velocity) of the gas (clean air) flowing in the upper space near the wafer can be changed.
  • a flow rate adjustment valve 54 may be provided in the exhaust passage 53 upstream or downstream of the branch passages 53 a and 53 b.
  • the installation position, shape, gas supply amount, and the like of the exhaust mechanism may have various forms corresponding to the device structure.
  • a solvent concentration sensor 46 is attached to the tip of the nozzle arm 45.
  • the solvent concentration sensor 46 can measure the solvent concentration (IPA concentration) in the upper space near the wafer.
  • the recovery cup 50 is configured by combining a plurality of cup bodies (not shown), and different fluid passages are formed in the recovery cup 50 by changing the relative positional relationship of the plurality of cup bodies. Also good.
  • the treatment liquid and the gas accompanying the treatment liquid are discharged from the recovery cup 50 through a fluid passage corresponding to the type of the treatment liquid (for example, an acidic treatment liquid, an alkaline treatment liquid, or an organic treatment liquid). Since such a configuration is well known to those skilled in the art, illustration and description thereof are omitted. In this case, it is only necessary that the exhaust flow rate at the time of performing the treatment using at least the organic treatment liquid (solvent, sublimable substance solution) can be adjusted as described above.
  • An exhaust port 56 for exhausting the atmosphere outside the recovery cup 50 is provided in the lower part of the chamber 20A and outside the recovery cup 50.
  • An exhaust path 57 connected to a duct of a factory exhaust system (not shown) is connected to the exhaust port 56.
  • the exhaust passage 57 is provided with a flow rate adjusting valve 58 such as a damper or a butterfly valve.
  • the bake unit 16B has a chamber 20B.
  • a hot plate 61 in which a resistance heater 62 is incorporated is provided in the chamber 20B.
  • a plurality of support pins 63 are provided on the upper surface of the hot plate 61.
  • the support pins 63 support the peripheral edge of the lower surface of the wafer W, and a small gap is formed between the lower surface of the wafer W and the upper surface of the hot plate 61.
  • An exhaust hood (cover) 64 that can be moved up and down is provided above the hot plate 61.
  • An exhaust pipe 65 in which a sublimable substance recovery device 66 and a pump 67 are interposed is connected to an opening provided at the center of the exhaust hood 64.
  • the sublimable substance recovery device 66 recovers the sublimable substance by cooling the exhaust gas flowing into the sublimable substance recovery apparatus 66 to precipitate the sublimable substance.
  • a film forming a semiconductor device for example, a wafer W subjected to dry etching to give a pattern to an SiN film, is carried into the cleaning unit 16A by the substrate transfer device 17 and held horizontally by the substrate holding mechanism 30.
  • the chemical solution nozzle 41 is positioned above the central portion of the wafer W rotated by the substrate holding mechanism 30, and the chemical solution for cleaning is supplied from the chemical solution nozzle 41 to the wafer W. Unnecessary substances such as etching residues and particles are removed from the surface of the wafer W (chemical solution cleaning step).
  • the rinse nozzle 42 is positioned above the central portion of the wafer W while the wafer W is continuously rotated, and DIW as a rinse liquid is supplied from the rinse nozzle 42 to the wafer W, whereby The chemical solution and the reaction product generated in the previous step are removed (rinsing step).
  • the solvent nozzle 43 is positioned above the center of the wafer W, and the IPA (that does not include the sublimable substance) (that is, the sublimable substance is dissolved) from the solvent nozzle 43.
  • Solvent that can be supplied to the wafer W, and DIW on the wafer W is replaced with IPA (solvent supply step).
  • FIG. That is, the entire pattern 100 (having the convex portions 101 and the concave portions 102 between the adjacent convex portions 101) formed on the surface of the wafer W is covered with the IPA liquid film.
  • the sublimable substance solution nozzle 44 is positioned above the center of the wafer W, and the sublimable substance solution SL (that is, the sublimable substance is removed from the sublimable substance solution nozzle 44).
  • a solution in which a sublimable substance is dissolved in IPA, which is a solvent that can be dissolved, is supplied to the wafer W, and the IPA on the wafer W is replaced with the sublimable substance solution SL (sublimation substance solution supply step). .
  • IPA a solvent that can be dissolved
  • the concave portion 102 is filled with the sublimable substance solution SL, and the entire pattern 100 formed on the surface of the wafer W is covered with the liquid film of the sublimable substance solution SL. Thereafter, by adjusting the rotation of the wafer W, the thickness of the liquid film of the sublimable substance solution SL (which determines the film thickness “t” of the sublimable substance film SS) is adjusted.
  • the deposition step can be performed, for example, by naturally evaporating the solvent while rotating the wafer W (without supplying the liquid to the wafer W).
  • the wafer W is heated by a heating means (not shown) (for example, a resistance heating heater or an LED heating lamp) that is built in the holding unit 31 of the substrate holding mechanism 30 or disposed in the vicinity of the wafer W. It is also possible to promote.
  • the state at the end of the deposition step is shown in FIG. That is, the recess 102 is filled with the solid sublimable material film SS.
  • the film thickness “t” of the sublimable material film SS is a value that does not expose the pattern 100 (that is, “t” is larger than the height “h” of the convex portion 101 of the pattern 100), and as much as possible. Small is desirable.
  • the pattern 100 is not exposed to the ambient atmosphere due to liquid breakage between the chemical solution cleaning step and the rinsing step, between the rinsing step and the solvent supply step, and between the solvent supply step and the sublimable substance solution supply step. It is preferable that the end of the discharge period of the treatment liquid used in the previous process overlaps the start of the discharge period of the treatment liquid used in the subsequent process.
  • the solvent concentration sensor 46 attached to the tip of the nozzle arm 45 causes The solvent (IPA) concentration is measured.
  • IPA solvent
  • the control device 4 increases the flow rate of the exhaust gas passing through the exhaust passage 53. This increase in the exhaust flow rate can be realized by opening the normally closed on-off valve 54b. In the case of the configuration of FIG. 3, the exhaust flow rate can be increased by increasing the opening degree of the flow rate adjustment valve 54.
  • the flow rate of the gas drawn into the recovery cup 50 from the upper space near the wafer is increased, and the flow rate (or flow velocity) of the gas flowing in the upper space near the wafer is increased.
  • the solvent vapor (IPA vapor) drifting in the upper space near the wafer is more strongly drawn into the recovery cup 50.
  • the solvent concentration (IPA concentration) in the upper space near the wafer can be reduced.
  • the increased exhaust flow rate of the exhaust passage 53 may be maintained until the deposition step is completed. By doing so, the solvent concentration in the upper space near the wafer can be more reliably maintained low. Instead, when the IPA concentration detected by the solvent concentration sensor 46 is less than a predetermined threshold (second threshold), the increased exhaust flow rate in the exhaust passage 53 may be returned to the original value. By doing so, factory power (factory exhaust system) can be used effectively.
  • the first threshold and the second threshold may be the same value, but it is preferable from the viewpoint of control stability that the second threshold is smaller than the first threshold.
  • the exhaust flow rate of the exhaust path 53 (cup exhaust gas exhaust flow rate) is increased, the pressure in the chamber 20A may decrease, and the atmosphere outside the chamber 20A may flow into the chamber 20A.
  • (1) the exhaust flow rate of the exhaust path 57 (exhaust flow rate of the module exhaust) is decreased, (2) gas is supplied from the gas supply nozzle 27a of the gas supply unit 27, and the chamber 20A is supplied. Increase the total flow rate of gas to be supplied.
  • At least one of the countermeasures such as increasing the total flow rate of the gas to be performed can be executed.
  • the countermeasure (2) or (3) for increasing the gas supply flow rate into the chamber 20A is adopted, the downflow of the gas flowing into the upper space near the wafer increases, so the solvent concentration in the upper space near the wafer. Can be reduced more efficiently.
  • the wafer W is unloaded from the cleaning unit 16A by the substrate transfer device 17 and loaded into the bake unit 16B.
  • the exhaust hood 64 is lowered to cover the upper portion of the wafer W.
  • the wafer W is heated to a temperature higher than the sublimation temperature of the sublimable substance by the heated hot plate 61 while sucking the upper space of the wafer W by the pump 67 interposed in the exhaust pipe 65 connected to the exhaust hood 64. Is heated.
  • the sublimable substance on the wafer W is sublimated and removed from the wafer W (sublimable substance removing step).
  • the state at the end of the sublimation substance removal step is shown in FIG. That is, the sublimation substance filled in the concave portion 102 is removed without causing the convex portion 101 of the pattern 100 to collapse.
  • the wafer W is unloaded from the bake unit 16B by the substrate transfer device 17 and transferred to the original carrier C.
  • a sound sublimable material film can be formed by increasing the flow rate (or flow velocity) of the gas flowing in the upper space near the wafer.
  • FIG. 6 shows an exhaust flow rate of the exhaust passage (53) by performing a rinsing step, a solvent supply step, a sublimation substance solution supply step and a precipitation step using a processing unit substantially corresponding to the cleaning unit 16A shown in FIG. Then, a test was conducted to confirm the IPA concentration above the wafer W and the presence or absence of spotted defects.
  • the exhaust flow rates were (Test 1) 0.45 m 3 / min, (Test 2) 0.53 m 3 / min, (Test 3) 0.65 m 3 / min, (Test 4) 0.90 m 3 / min, (Test 5) Five levels of 1.00 m 3 / min were set. In each test, while carrying out the solvent supply process, the sublimable substance solution supply process and the precipitation process, the above flow rate was kept constant. In each test, the IPA concentration was measured at a position 10 mm above the center of the wafer W.
  • the occurrence of spotted defects can be prevented by suppressing the IPA concentration in the space above the wafer W in the vicinity of the wafer W to a predetermined value (500 ppm in this test) or less.
  • a predetermined value 500 ppm in this test
  • FIG. 8 shows an image when the spotted defect targeted in this embodiment is viewed from above the wafer.
  • FIG. 9 is an image showing the relationship between the spotted defect and the pattern on the wafer. The pattern is not completely covered with the sublimable material film but is exposed.
  • the mechanism of the occurrence of patchy defects is not clear at present, but the present inventor believes that it is one of the following. (Mechanism 1) When a relatively high concentration (for example, about 1000 ppm) of IPA vapor is present in the vicinity of the wafer surface, the film of the sublimable substance once deposited (solidified) is dissolved, and spotted defects are generated in the dissolved portion. .
  • Mechanism 1 When a relatively high concentration (for example, about 1000 ppm) of IPA vapor is present in the vicinity of the wafer surface, the film of the sublimable substance once deposited (solidified) is dissolved, and spotted defects are generated in the dissolved portion. .
  • Mechanism 2 When IPA vapor having a relatively high concentration (for example, about 1000 ppm) exists in the vicinity of the wafer surface, the evaporation of the solvent in the sublimable substance to be precipitated (solidified) is suppressed, thereby vaporizing. Since the heat is reduced, a large lump (large crystal) of the sublimable substance is precipitated (solidified), and a patch-like defect is generated at a crystal grain boundary portion having a large strain. It is clear from the above test results that the occurrence of spotted defects can be prevented by suppressing the IPA concentration in the vicinity of the wafer surface, regardless of whether the estimated mechanism of the spotted defects is correct or not.
  • a relatively high concentration for example, about 1000 ppm
  • the IPA concentration in the upper space near the wafer when the IPA concentration in the upper space near the wafer increases, the IPA concentration in the upper space near the wafer can be decreased by increasing the flow rate or flow velocity of the gas in the upper space near the wafer. it can. For this reason, it is possible to form a sound sublimable material film without defects.
  • the exhaust flow rate of the recovery cup 50 is increased when the IPA concentration in the upper space near the wafer is increased, there may be a disadvantage that may occur when the exhaust flow rate of the recovery cup 50 is constantly kept high (for example, (1) below) (3)) can be avoided. That is, (1) the airflow in the recovery cup 50 can guide the processing liquid (in the form of mist) scattered from the wafer W after being supplied to the rotating wafer W to the drainage port in an intended manner. If the exhaust flow rate of the recovery cup 50 is increased more than necessary, the air flow in the recovery cup 50, particularly in the vicinity of the peripheral edge of the wafer W, is disturbed.
  • a suction port 72 is provided in the top plate 71, and a space surrounded by the cylindrical body 70 and the top plate 71 can be sucked through the suction port 72 through an exhaust passage 74 in which a pump 73 is interposed.
  • the nozzles 41 to 44 are provided at the tip of one or more rod-like nozzle arms 75, and the nozzle arms 75 are advanced into the space above the wafer through the openings 70b provided in the side peripheral wall of the cylindrical body 70 ( (See arrow 75a).
  • an air flow toward the suction port 72 is formed in the upper space near the wafer, that is, the gas flow rate or flow velocity in the upper space near the wafer is increased, and the IPA concentration in the upper space near the wafer is increased. Can be reduced.
  • the increase in the gas flow rate or flow velocity in the upper space near the wafer is performed when the detected value of the IPA concentration of the solvent concentration sensor 46 exceeds a predetermined threshold value.
  • the processing conditions are the same, the elapsed time from the start of the supply period of the solvent-containing processing liquid in which the IPA concentration in the upper space near the wafer exceeds the threshold value is substantially the same. Therefore, an elapsed time that the IPA concentration is assumed to exceed the threshold value is obtained by experiment, and when the elapsed time arrives or slightly before the arrival, an increase in the gas flow rate or flow velocity in the space near the wafer starts.
  • Process recipes may be created as described.
  • the start of the increase is, for example, “simultaneous with the start of the solvent supply process”, “10 seconds after the start of the solvent supply process”, “simultaneous with the start of the sublimation substance solution supply process”, “5 In seconds ".
  • the IPA concentration exceeds the threshold value in the precipitation step after the sublimable substance solution supply step, in that case, “simultaneous with the start of the precipitation step”, “5 seconds after the start of the precipitation step”, You may define as follows.
  • the airflow change may be started a predetermined time before the start time of the supply period of the solvent-containing processing liquid so that the IPA concentration in the upper space near the wafer does not increase to the vicinity of the threshold.
  • the start of the increase can be defined as, for example, “10 seconds before the start of the solvent supply process” or “10 seconds before the start of the sublimation substance solution supply process”.
  • the substrate to be processed is not limited to the semiconductor wafer W described above, and may be another substrate such as an LCD glass substrate or a ceramic substrate.
  • W substrate semiconductor wafer
  • 24 Supply air flow rate adjustment unit air flow control unit (FFU21 fan, damper) 27c Supply air flow rate adjustment unit, air flow control unit (flow rate adjustment device 27c of gas supply unit 27) 30 Substrate holding part (substrate holding mechanism) 40 Treatment Solution Supply Unit 46 Concentration Measurement Unit (Solvent Concentration Sensor) 50 Enclosure (collection cup) 53,74 Exhaust line (exhaust passage) 54 Exhaust flow rate control unit, air flow control unit (flow control valve) 54a, 54b Exhaust flow rate adjustment unit, air flow control unit (open / close valve) 70, 71 Enveloping body (tubular body, top plate) 73 Exhaust flow rate control unit, air flow control unit (pump) 100 pattern 102 pattern recess

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Abstract

Un dispositif de traitement de substrat qui effectue un traitement pour remplir une portion en creux d'un motif formé dans un substrat (W) avec une substance sublimable comprend : une unité de support de substrat (30) qui maintient le substrat; une chambre (20) recevant une unité d'alimentation en liquide de traitement (40), l'unité de support de substrat et une unité d'alimentation en liquide de traitement, l'unité d'alimentation en liquide de traitement fournissant au moins un type de liquide de traitement contenant un solvant capable de dissoudre la substance sublimable sur le substrat; un mécanisme d'alimentation en gaz qui fournit du gaz dans la chambre; et un mécanisme d'évacuation qui évacue l'atmosphère dans la chambre. Le dispositif de traitement de substrat est pourvu d'une unité de commande d'échappement d'air (telle que des soupapes d'ouverture/fermeture (54a, 54b)) dans une période d'alimentation en liquide de traitement dans laquelle l'unité d'alimentation en liquide de traitement fournit le liquide de traitement contenant un solvant au substrat, commande au moins l'un du mécanisme d'alimentation en gaz et du mécanisme d'échappement (tel qu'un trajet d'évacuation (53)) afin d'obtenir un changement d'échappement d'air pour augmenter le débit ou la vélocité d'écoulement du flux d'air dans un espace autour du substrat.
PCT/JP2017/029096 2016-08-12 2017-08-10 Dispositif de traitement de substrat, procédé de traitement de substrat et moyen de stockage WO2018030516A1 (fr)

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