WO2017191796A1 - Dispositif et procédé de production de film mince - Google Patents

Dispositif et procédé de production de film mince Download PDF

Info

Publication number
WO2017191796A1
WO2017191796A1 PCT/JP2017/016584 JP2017016584W WO2017191796A1 WO 2017191796 A1 WO2017191796 A1 WO 2017191796A1 JP 2017016584 W JP2017016584 W JP 2017016584W WO 2017191796 A1 WO2017191796 A1 WO 2017191796A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
film thickness
thickness sensor
thin film
growth rate
Prior art date
Application number
PCT/JP2017/016584
Other languages
English (en)
Japanese (ja)
Inventor
孔 木村
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2018515709A priority Critical patent/JP6628869B2/ja
Priority to KR1020187025289A priority patent/KR102193817B1/ko
Priority to CN201780028113.4A priority patent/CN109154071B/zh
Publication of WO2017191796A1 publication Critical patent/WO2017191796A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Definitions

  • the present invention relates to a technique for forming a thin film, and in particular, to provide a thin film manufacturing apparatus and a thin film manufacturing method in which a film thickness sensor for detecting a growth rate of a thin film has a long usable period.
  • a reference numeral 100 in FIG. 3 is a conventional thin film manufacturing apparatus and includes a vacuum chamber 113.
  • An evaporation source 112 is disposed inside the vacuum chamber 113.
  • the evaporation source 112 has an evaporation container 133, and the film formation target substrate 115 carried into the vacuum chamber 113 passes or is disposed above the evaporation container 133. Yes.
  • the evaporation container 133 is hollow, and an organic material 137 made of a powdery organic compound is disposed inside the evaporation container 133.
  • the evaporation container 133 is provided with a heating device 134, and the heating device 134 is connected to a film forming power source 145.
  • the inside of the vacuum chamber 113 is evacuated by the vacuum evacuation device 139 to form a vacuum atmosphere, and the heating device 134 is energized by the film forming power source 145 to generate heat.
  • the heated heating device 134 heats the evaporation container 133.
  • the organic material 137 that has been heated and disposed inside the evaporation container 133 is heated by the evaporation container 133 that has been heated.
  • the organic material 137 is heated to an evaporation temperature or higher, it evaporates (including sublimation), and a large amount of the vapor of the organic material 137 is released into the evaporation container 133.
  • a discharge hole 138 is provided at a position of the evaporation container 133 facing the film formation target substrate 115, and the generated vapor is discharged from the discharge hole 138 into the vacuum chamber 113 and reaches the surface of the film formation target substrate 115. Then, a thin film of the organic material 137 grows in the reached portion.
  • a growth rate control circuit 114 that controls the growth rate of the thin film of the organic material 137 is disposed outside the vacuum chamber 113. The procedure by which the growth rate control circuit 114 controls the growth rate will be described.
  • a film thickness sensor 131 is provided in the vacuum chamber 113, and the film thickness sensor 131 is provided in the growth rate control circuit 114.
  • the growth rate measuring device 141 is connected.
  • the film thickness sensor 131 is disposed at a side position of the film formation target substrate 115, and the vapor of the organic material 137 released from the evaporation source 112 reaches the film formation target substrate 115 and the film thickness sensor 131.
  • a thin film is grown on the film formation target substrate 115 and the film thickness sensor 131, and the film thickness detected by the film thickness sensor 131 is output to the growth rate measuring device 141 as a signal indicating the film thickness.
  • the measuring device 141 obtains the growth rate of the film thickness, and a signal indicating the growth rate is output to the velocity deviation detector 142 as a measurement signal.
  • the desired growth rate of the thin film grown on the surface of the film formation target substrate 115 is obtained in advance, converted into the growth rate of the surface of the film thickness sensor 131 and stored in the storage device 143 as a reference value. From this, a reference signal indicating a reference value is output and input to the speed deviation detector 142.
  • the speed deviation detector 142 obtains a magnitude relationship and a difference value between the value indicated by the input reference signal and the value indicated by the input measurement signal, and calculates a deviation which is a signed difference value indicating positive / negative.
  • a deviation signal is output from the speed deviation detector 142 to the film forming power source 145.
  • the film forming power source 145 includes the heating device 134. Is reduced, the amount of vapor generated by the organic material 137 inside the evaporation source 112 is reduced, and the growth rate values of the film formation target substrate 115 and the film thickness sensor 131 are reduced.
  • the film-forming power source 145 increases the current output to the heating device 134 to increase the organic content inside the evaporation source 112.
  • the growth rate of the film formation target substrate 115 and the film thickness sensor 131 is increased by increasing the amount of vapor generated from the material 137.
  • the value of the current supplied to the heating device 134 by adjusting the value of the current supplied to the heating device 134, the variation in the amount of steam generated from the organic material 137 is reduced, the amount of steam generated is maintained at a constant value, and the growth rate is set to the reference value. Maintained.
  • the amount of current to be increased and the amount of current to be decreased are proportional to the value of the deviation. When the absolute value of the deviation is large, the deviation quickly approaches zero.
  • Reference numeral 105 in FIG. 4 is a curve showing a change in the growth rate over time when the growth rate is controlled by a constant monitoring method, and a small increase or decrease is made while the growth rate approaches the straight line 106 indicating the reference value. As a result of this fine increase / decrease, the difference between the actual growth rate and the reference value is large even when the reference value is approached.
  • the present invention was created to solve the above-mentioned disadvantages of the prior art, and an object of the present invention is to provide a thin film manufacturing apparatus capable of detecting the growth rate of a thin film for a long period of time.
  • the present invention provides a vacuum chamber, a film formation source in which a film formation material is disposed, power supply to the film formation source, and the film formation material disposed in the film formation source.
  • a main controller for discharging fine particles from the discharge part of the film forming source to the inside of the vacuum chamber, and a film thickness of the thin film formed on the surface, arranged at a position where the fine particles reach and the thin film grows A film thickness sensor that outputs a film thickness signal of the content, and the main control device determines the magnitude of electric power supplied to the film formation source based on the film thickness signal output by the film thickness sensor.
  • a thin film manufacturing apparatus for changing a discharge rate of the film forming source to grow a thin film on the surface of the film formation target at a desired growth rate, wherein a shutter is disposed in the vacuum chamber, and the shutter Is moved by the main controller, and the shutter is connected to the film thickness sensor.
  • a shielded state that is located between the discharge part and shields the fine particles from reaching the film thickness sensor, and moves from a position between the film thickness sensor and the discharge part to another place,
  • the thin film manufacturing apparatus is configured to switch a reaching state in which fine particles reach the film thickness sensor.
  • This invention is a thin film manufacturing apparatus with which the film thickness of the thin film formed in the said film thickness sensor is measured during the arrival period when the said shutter maintains the said arrival state.
  • the present invention is a thin film manufacturing apparatus that obtains the measured growth rate on the film thickness sensor from the measured film thickness and changes the magnitude of electric power supplied to the film formation source.
  • the present invention provides a vacuum atmosphere inside the vacuum chamber, supplies power to a film forming source disposed inside the vacuum chamber, and discharges fine particles of a film forming material from a discharge portion of the film forming source. The fine particles reach the film formation object and the film thickness sensor located in the atmosphere, and the measurement growth rate is changed by changing the magnitude of the electric power based on the growth rate of the thin film grown on the film thickness sensor.
  • a thin film manufacturing method that approaches a reference speed, wherein a shutter is provided inside the vacuum chamber, the shutter is opened and closed while the fine particles reach the film formation target, and the film thickness sensor and the discharge unit The shutter is positioned between the film thickness sensor and the film thickness sensor so that the fine particles do not reach the film thickness sensor.
  • Reachable state Which is a thin film manufacturing method of switching alternately.
  • the present invention is the thin film manufacturing method according to claim 4, wherein the measured growth rate is obtained for each arrival period in which the shutter maintains the arrival state, and the magnitude of electric power supplied to the film forming source is changed.
  • the present invention if the time for one cycle is set and the supplied power is changed once during one cycle, the growth rate oscillation caused by the constant control is eliminated, so that the control becomes easy.
  • the time for the thin film to adhere to the film thickness sensor can be shortened, so that the life of the film thickness sensor can be extended.
  • the block diagram for demonstrating the thin film manufacturing apparatus of this invention Graph for explaining the relationship between the oscillation frequency and film thickness of crystal units
  • Block diagram for explaining a conventional thin film manufacturing apparatus Graph showing growth rate over time A graph comparing the frequency change in the arrival period and the frequency change when the arrival period and the cutoff period are repeated in a short time
  • Reference numeral 10 in FIG. 1 indicates a thin film manufacturing apparatus of the present invention.
  • the thin film manufacturing apparatus 10 includes a vacuum chamber 13, and a film forming source 12 is disposed inside the vacuum chamber 13.
  • the film forming source 12 has a hollow evaporation container 33, and a film forming material 37 is disposed in the hollow portion.
  • the film forming material 37 is a powdery organic compound here, but may be an inorganic material such as a metal material or a metal oxide, or a liquid material.
  • a vacuum evacuation device 45 is connected to the vacuum chamber 13, and when the vacuum evacuation device 45 is operated and the inside of the vacuum chamber 13 is evacuated, a vacuum atmosphere is formed inside the vacuum chamber 13.
  • the inner hollow portion of the evaporation container 33 is evacuated by the evacuation device 45, and a vacuum atmosphere is formed in the same manner as the vacuum chamber 13.
  • Another vacuum evacuation device may be connected to the evaporation vessel 33, and the inside of the evaporation vessel 33 may be evacuated by the vacuum evacuation device.
  • a main controller 18 is disposed outside the vacuum chamber 13.
  • the main controller 18 is provided with a growth rate controller 14, and the growth rate controller 14 is provided with a film forming power source 46 and a power source controller 42 for controlling the operation of the film forming power source 46.
  • the power supply controller 42 When the power supply controller 42 operates the film forming power source 46, power is supplied from the film forming power source 46 to the film forming source 12.
  • a heating device 34 is provided inside the film forming source 12, and the heating device 34 generates heat by the supplied power to heat the film forming material 37.
  • a vapor discharge hole is formed as a discharge part 38 in the ceiling of the evaporation container 33, and the fine particles of the film forming material 37 pass through the vapor discharge hole, so that the inside of the vacuum chamber 13 from the discharge part 38 of the film formation source 12. Then, the fine particles of the film forming material 37 are released. Therefore, when power is supplied from the main controller 18 to the film forming source 12, the fine particles of the film forming material 37 are released from the film forming source 12.
  • the discharge part 38 may be a plurality of vapor discharge ports.
  • the film formation target is placed stationary at the film formation position where the fine particles of the film formation material 37 reach, or the film formation target passes through the film formation position.
  • the substrate holder 39 is provided at the film formation position where the fine particles of the film formation material 37 reach, and the film formation target indicated by reference numeral 15 is held by the substrate holder 39 and is stationary.
  • a thin film here, an organic thin film
  • a film thickness sensor 31 and a shutter 35 are disposed inside the vacuum chamber 13.
  • the main controller 18 is provided with a motor controller 51 and an opening / closing controller 43 connected to the motor controller 51.
  • the shutter 35 is connected to a motor 36, and the rotation of the motor 36 is controlled by a motor controller 51.
  • the shutter 35 is moved in the vacuum chamber 13 by the rotation of the motor 36 so that the position can be changed.
  • the shutter 35 is moved from the blocking position in the blocking state, which is located at the blocking position, which is a position between the film thickness sensor 31 and the discharge portion 38, by the opening / closing controller 43 controlling the motor controller 51.
  • the shutter 35 is to be opened and closed by being in the shielding state and the reaching state.
  • the film thickness sensor 31 When the shutter 35 is in the reaching state, the film thickness sensor 31 is located at a location where the fine particles of the film forming material 37 emitted from the film forming source 12 can reach, and at that time, the film forming object 15 and the film thickness. Fine particles of the film forming material 37 released from the same film forming source 12 reach the sensor 31, and a thin film made of the same kind of fine particles is formed on the surface of the film thickness sensor 31 and the surface of the film formation target 15. grow up. Since the film formation target 15 and the film thickness sensor 31 have different distances from the film formation source 12, the film formation target 15 and the film thickness sensor 31 have a film thickness at a certain place ratio corresponding to the distance. A thin film grows.
  • the main controller 18 is provided with a growth rate measuring device 41, and the film thickness sensor 31 is connected to the growth rate measuring device 41.
  • the film thickness sensor 31 outputs a film thickness signal indicating the film thickness of the thin film attached to the surface to the main controller 18.
  • the film thickness signal output from the film thickness sensor 31 is input to the growth rate measuring device 41 of the main control device 18, and the growth rate measuring device 41 continues (for example, within 1 second) while the shutter 35 is continuously reached. ),
  • the film thickness of the thin film on the film thickness sensor 31 is measured at different times.
  • the main control device 18 operates the shutter 35 so as to alternately repeat a certain arrival period and a certain shielding period, and a total of one arrival period and one shielding period adjacent to the arrival period.
  • the growth rate of the thin film grown on the film thickness sensor 31 is calculated.
  • the growth rate is “the increase in film thickness / the time required for the increase”.
  • the main controller 18 can calculate the growth rate of the thin film on the film formation target 15 from the proportional relationship and the growth rate of the thin film on the film thickness sensor 31.
  • the growth rate measuring device 41 outputs the calculated growth rate of the thin film on the film thickness sensor 31 as the measured growth rate.
  • the main controller 18 is provided with a storage device 49, which stores a reference value for the growth rate of the thin film on the film thickness sensor 31 as a reference rate.
  • a reference speed and a measured growth speed are input to the power supply controller 42.
  • the power supply controller 42 compares the reference speed and the measured growth speed, calculates a deviation consisting of a value corresponding to the difference and a sign indicating which is larger, and forms a film forming power supply 46 as a control signal indicating the speed deviation. Output to.
  • the reference value of the growth rate for the film formation target 15 is set as the target growth rate. If this is the case, the growth rate of the thin film on the film thickness sensor 31 and the reference speed for the film thickness sensor 31 are compared.
  • the magnitude of the electric power supplied from the film formation power source 46 to the heating device 34 is controlled by a control signal output from the power supply controller 42.
  • the film formation is performed.
  • the film forming power source 46 is controlled to reduce the power supplied to the heating device 34.
  • the “release rate” of the film forming source 12 is a value of “release amount / release time of the film forming source 12”.
  • the film forming power source 46 is controlled to increase the power supplied to the heating device 34 in order to increase the particle release rate.
  • the vapor emitted from the discharge unit 38 does not reach the film thickness sensor 31 even if it reaches the film formation target 15 and does not reach the film formation target 15. Even if a thin film grows on the film thickness sensor 15, no thin film grows on the film thickness sensor 31.
  • the thin film formed on the film thickness sensor 31 is thinner than the film thickness of the thin film formed on the single film formation object 15, and therefore, a plurality of film formation objects are obtained by the single film thickness sensor 31. 15 can be formed one by one.
  • the graph of FIG. 2 shows the relationship between the oscillation frequency (horizontal axis) of the film thickness sensor 31 composed of a crystal resonator and the weight of the thin film per unit area of the surface of the film thickness sensor 31 (vertical axis: film thickness ⁇ density). This graph shows that the oscillation frequency decreases as the thin film on the surface of the thin film grows. “Z” in the figure is a symbol indicating the acoustic impedance ratio between the thin film adhering to the crystal unit and the crystal unit.
  • the linearity of the graph is higher than the other portions between a frequency (for example, 4.8 MHz) that is a few tenths of a MHz lower than 5 MHz to 5 MHz. Within the range, it can be seen that the thickness of the thin film having a known density can be accurately obtained from the measured oscillation frequency value.
  • the film thickness sensor 31 When the vapor discharged from the discharge portion 38 reaches the film formation target 15 and the film thickness sensor 31, the growth rate of the thin film formed on the film thickness sensor 31 is measured. When maintaining, the reaching state and shielding state of the shutter 35 are repeated. Then, when reaching the state during the repetition, the measurement growth rate is obtained and the power supplied to the film forming source 12 is controlled so that the film formation target 15 is the same vacuum chamber 13 as the film thickness sensor 31. While the thin film having a predetermined thickness is formed on the surface of the film formation target 15, the film thickness sensor 31 indicates the time for the thin film to grow on the surface of the film formation target 15. It can be made shorter than the growth time.
  • the shutter 35 alternately repeats the shielding state and the reaching state, and by measuring the film thickness when the shutter 35 is in the reaching state, the film thickness of the thin film formed on the surface of the film thickness sensor 31 is reduced to the reaching state without the shielding state. Can be made thinner than when maintaining.
  • the shielding period for maintaining the shielding state and the reaching period for maintaining the reaching state are stored in the storage device 49, and a period signal indicating the length of each period is output to the opening / closing controller 43 as a set value.
  • a trigger is output to the growth rate controller 14 during the arrival period, and the power supplied to the film forming source 12 is changed to the power source controller 42.
  • the supply of power changed to the immediately preceding arrival period may be continuously performed during the shielding period.
  • the magnitude of the power output in the immediately preceding arrival period may be changed during the shielding period.
  • Reference numeral 5 in FIG. 4 is a polygonal line showing the change over time of the growth rate when the magnitude of the power changed at each measurement time t 1 to t 5 is maintained between the measurement times t 1 to t 5. Between t 1 and t 5 , the growth rate changes linearly, and is a constant value near the straight line 6 indicating the reference value.
  • the total time of one arrival period and one shielding period adjacent to the arrival period is one cycle.
  • the time of arrival state / one period is smaller than “1” and the film thickness is “arrival” "Time of state / one cycle” times. Accordingly, the usable time of the film thickness sensor 31 used in the present invention is doubled by “one period / time of arrival state”.
  • FIG. 5 shows the relationship between the elapsed time (horizontal axis) and the frequency (vertical axis) of the film thickness sensor when the short arrival period and the shielding period are repeated after the long arrival period.
  • the slope of the curve L 1 indicating the relationship between the elapsed time and the frequency between the start time A of the arrival period and the cutoff time B of the arrival period shows the arrival period and the cutoff period after time B. It can be seen that the slope of the curve L 2 when repeated is larger, and therefore, when the reaching period and the cutoff period are repeated, the thickness of the thin film formed on the surface of the film thickness sensor 31 is small.
  • the measured growth rate was obtained within one arrival period, but the film thickness value obtained at the first time, which is the time during one arrival period, and the time during the previous arrival period.
  • the measurement growth rate is obtained from the film thickness difference that is the difference between the film thickness value obtained at the second time and the total time of the arrival period between the first time and the second time. You may do it.
  • the present invention is not limited to obtaining the measured growth rate based only on the value of the film thickness during one arrival period.
  • the desired growth rate on the film formation target 15 is converted into the growth rate on the film thickness sensor 31.
  • the main controller 18 sets the growth rate on the film thickness sensor 31 as a reference value, compares the growth rate of the film thickness sensor 31 with the reference value, and controls the power supplied to the heating device 34 to control the film thickness sensor.
  • the growth rate of 31 may be a reference value.
  • the film thickness of the film thickness sensor 31 is measured during the arrival period, but may be measured during the shielding period. In this case, the film thickness of the film formation target 15 at the measured time can also be obtained by the measurement value and calculation at another time.
  • a resistance heater is used for the heating device 34, the evaporation container 33 is heated by heat conduction, and the film forming material 37 is heated by the evaporation container 33 whose temperature has been raised by heat conduction.
  • the temperature of the film forming material 37 is controlled by controlling the amount of heat generated by the heating device 34, and the evaporation vessel 33 is heated using an infrared lamp as the heating device 34.
  • An induced current may be passed through the evaporation container 33 to heat the evaporation container 33.
  • a sputtering target is used as a film forming source
  • the main controller 18 is provided with a sputtering power source for supplying power to the sputtering target as a film forming power source.
  • the plasma is generated on the emission part which is the surface of the film formation source by the power supplied from the film formation power source to the film formation source, the film formation source is sputtered, and the fine particles of the film formation material composed of the sputtered particles are emitted from the emission part.
  • a sputtering apparatus that discharges and forms a thin film by allowing fine particles to reach the surface of the film formation target and the surface of the film thickness sensor.
  • the present invention includes a film forming apparatus provided with a shutter that can move between a blocking location between the film thickness sensor and the film forming source and another location, in the thin film manufacturing apparatus of the present invention.
  • the evaporation container 33 was arrange
  • the “evaporation rate” in the above description means the amount of vapor released per unit time, and does not mean the vapor flight speed.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention permet l'utilisation prolongée d'un capteur d'épaisseur de film. Des particules fines d'un matériau de formation de film 37 sont émises à partir d'une source de formation de film 12 de manière à faire croître un film mince sur un objet de formation de film 15 et un capteur d'épaisseur de film 31 ; une vitesse de croissance du film mince mesurée est obtenue par le capteur d'épaisseur de film 31 ; on compare la vitesse de croissance mesurée et une vitesse de référence préétablie et lorsque l'on fait varier la puissance électrique de telle sorte que la vitesse de croissance mesurée s'approche de la vitesse de reference, un obturateur 35 entre le capteur d'épaisseur de film 31 et une partie d'émission 38 est ouvert et fermé, ce qui réduit le temps pendant lequel les particules fines peuvent atteindre le capteur d'épaisseur de film 31. L'épaisseur de film du film mince formé sur le capteur d'épaisseur de film 31 est inférieure à celle obtenue lorsque l'obturateur 35 est fermé et non ouvert, ce qui prolonge la durée de vie du capteur d'épaisseur de film 31.
PCT/JP2017/016584 2016-05-06 2017-04-26 Dispositif et procédé de production de film mince WO2017191796A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018515709A JP6628869B2 (ja) 2016-05-06 2017-04-26 薄膜製造装置、薄膜製造方法
KR1020187025289A KR102193817B1 (ko) 2016-05-06 2017-04-26 박막 제조 장치, 박막 제조 방법
CN201780028113.4A CN109154071B (zh) 2016-05-06 2017-04-26 薄膜制造装置、薄膜制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016093400 2016-05-06
JP2016-093400 2016-05-06

Publications (1)

Publication Number Publication Date
WO2017191796A1 true WO2017191796A1 (fr) 2017-11-09

Family

ID=60202993

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/016584 WO2017191796A1 (fr) 2016-05-06 2017-04-26 Dispositif et procédé de production de film mince

Country Status (5)

Country Link
JP (1) JP6628869B2 (fr)
KR (1) KR102193817B1 (fr)
CN (1) CN109154071B (fr)
TW (1) TW201809327A (fr)
WO (1) WO2017191796A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110872695A (zh) * 2018-08-31 2020-03-10 佳能特机株式会社 成膜装置及成膜装置的控制方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108342699B (zh) * 2018-02-11 2020-06-30 中国科学院上海光学精密机械研究所 综合沉积镀膜设备及综合镀膜方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910339A (ja) * 1982-07-09 1984-01-19 Hitachi Ltd 連続成膜装置
JPH07283281A (ja) * 1994-04-05 1995-10-27 Toshiba Corp ターゲットの寿命判断方法及びスパッタ装置
JP2007039762A (ja) * 2005-08-04 2007-02-15 Sony Corp 蒸着装置及び蒸着方法
JP2007231303A (ja) * 2006-02-27 2007-09-13 Shincron:Kk 薄膜形成装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58217673A (ja) * 1982-06-11 1983-12-17 Anelva Corp 膜厚制御方法
CN102639746B (zh) * 2009-12-09 2014-03-12 株式会社爱发科 有机薄膜的成膜装置以及有机材料成膜方法
KR20120023273A (ko) * 2010-09-01 2012-03-13 (주)알파플러스 셔터를 이용하는 진공증착막의 두께 모니터링 방법 및 이 방법을 채용하는 진공증착장치
JP5910339B2 (ja) * 2012-06-13 2016-04-27 富士通株式会社 カプラ、ソケット及びプラグ
KR101959975B1 (ko) * 2012-07-10 2019-07-16 삼성디스플레이 주식회사 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
SG11201608133PA (en) 2014-05-26 2016-11-29 Ulvac Inc Film-forming device, method for measuring film thickness of organic film, and film thickness sensor for organic film
CN105177520B (zh) * 2015-08-05 2016-06-08 京东方科技集团股份有限公司 膜厚调节器及其制造方法、调节方法、蒸镀设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910339A (ja) * 1982-07-09 1984-01-19 Hitachi Ltd 連続成膜装置
JPH07283281A (ja) * 1994-04-05 1995-10-27 Toshiba Corp ターゲットの寿命判断方法及びスパッタ装置
JP2007039762A (ja) * 2005-08-04 2007-02-15 Sony Corp 蒸着装置及び蒸着方法
JP2007231303A (ja) * 2006-02-27 2007-09-13 Shincron:Kk 薄膜形成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110872695A (zh) * 2018-08-31 2020-03-10 佳能特机株式会社 成膜装置及成膜装置的控制方法
CN110872695B (zh) * 2018-08-31 2023-06-02 佳能特机株式会社 成膜装置及成膜装置的控制方法

Also Published As

Publication number Publication date
KR20180110004A (ko) 2018-10-08
CN109154071A (zh) 2019-01-04
TW201809327A (zh) 2018-03-16
KR102193817B1 (ko) 2020-12-22
JP6628869B2 (ja) 2020-01-15
JPWO2017191796A1 (ja) 2018-10-25
CN109154071B (zh) 2020-10-27

Similar Documents

Publication Publication Date Title
JP5081899B2 (ja) 蒸着源、蒸着装置、成膜方法
WO2017191796A1 (fr) Dispositif et procédé de production de film mince
TWI681066B (zh) 真空蒸鍍裝置
JP2008223141A (ja) 層を堆積させるための方法および制御システム
US20180087142A1 (en) Method for producing coated substrates
KR101976254B1 (ko) 성막 장치 및 성막 방법
Pajdarova et al. Optical emission spectroscopy during the deposition of zirconium dioxide films by controlled reactive high-power impulse magnetron sputtering
KR101899722B1 (ko) 막 두께 측정 장치
JP5024075B2 (ja) 真空蒸着装置
JP6318254B2 (ja) ガス供給を制御するための方法及びコントローラ
CN109072415B (zh) 有机薄膜制造装置、有机薄膜制造方法
CN106191779A (zh) 一种聚合物真空电子束蒸发镀膜机
JP4167780B2 (ja) 原子吸光式レートモニター
Haase et al. Plasma characterization in reactive sputtering processes of Ti in Ar/O 2 mixtures operated in metal, transition and poisoned modes: a comparison between direct current and high-power impulse magnetron discharges
JP4735291B2 (ja) 成膜方法
Oskirko et al. Effect of duty cycle and frequency on the ion current density on substrate and ion/atom ratio in magnetron sputtering of aluminum
JP2010242202A (ja) 蒸着装置
JP5800603B2 (ja) 蒸着装置、膜厚測定方法
JP2015209559A (ja) 蒸着装置
JP2010255025A (ja) 蒸着装置
CN107043917A (zh) 磁控溅射设备及系统
JPS62211376A (ja) 膜成長制御装置
JP6513514B2 (ja) 温度測定方法
JP2000323442A (ja) 圧電素子の周波数調整装置
JP2006022355A (ja) 補正板に加熱手段を設けた膜形成装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2018515709

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20187025289

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17792729

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17792729

Country of ref document: EP

Kind code of ref document: A1