JP6318254B2 - ガス供給を制御するための方法及びコントローラ - Google Patents
ガス供給を制御するための方法及びコントローラ Download PDFInfo
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- JP6318254B2 JP6318254B2 JP2016543327A JP2016543327A JP6318254B2 JP 6318254 B2 JP6318254 B2 JP 6318254B2 JP 2016543327 A JP2016543327 A JP 2016543327A JP 2016543327 A JP2016543327 A JP 2016543327A JP 6318254 B2 JP6318254 B2 JP 6318254B2
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- 238000000034 method Methods 0.000 title claims description 54
- 238000005546 reactive sputtering Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 273
- 238000004544 sputter deposition Methods 0.000 description 36
- 239000000758 substrate Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 17
- 239000002131 composite material Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000009717 reactive processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32981—Gas analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
Claims (12)
- 処理チャンバ(301)へのガス供給を制御するための方法(200)であって、
前記処理チャンバ(301)内に備えられた2つ以上のセンサ(35、36、313、314)の各々によってガスパラメータを測定すること(210)、
前記測定されたガスパラメータから平均ガスパラメータを決定すること(220)、及び
前記決定された平均ガスパラメータに基づいて、前記処理チャンバ(301)への前記ガス供給を制御すること(230)を含み、
前記ガス供給を制御することは、前記2つ以上のセンサ(35、36、313、314)の少なくとも1つによって測定される前記ガスパラメータが前記平均ガスパラメータに一致するように、前記ガス供給を調整することを含む、方法。 - 前記ガスパラメータは、ガス濃度、質量及び圧力のうちの少なくとも1つである、請求項1に記載の方法(200)。
- 前記ガスパラメータを測定することは、2つ以上のセンサ(35、36、313、314)のそれぞれによって、ある時間間隔の範囲内で2つ以上のガスパラメータ値を測定することを含む、請求項1又は2に記載の方法(200)。
- 前記平均ガスパラメータは、前記2つ以上のガスパラメータ値から決定される、請求項3に記載の方法(200)。
- 各センサ(35、36、313、314)に対して、前記時間間隔内で前記各センサによって測定された前記ガスパラメータ値から、センサ平均値を決定することを更に含み、
前記平均ガスパラメータは、前記センサ平均値に基づいて決定される、請求項3に記載の方法(200)。 - 前記ガス供給は処理電力に基づいて更に制御される、請求項1から5のいずれか一項に記載の方法(200)。
- 前記ガス供給を制御することは、P、PI又はPID制御を利用する、請求項1から6のいずれか一項に記載の方法(200)。
- 前記ガス供給を前記制御することは、一又は複数のガス注入口(31、32、51、309、310)を通るガス流を制御することを含む、請求項1から7のいずれか一項に記載の方法(200)。
- 前記方法は、反応性処理又は反応性スパッタリング処理の間に実施される、請求項1から8のいずれか一項に記載の方法(200)。
- 処理チャンバ(301)へのガス供給を制御するためのコントローラ(40)であって、各々がガスパラメータを測定するように構成された2つ以上のセンサ(35、36、313、314)は、前記処理チャンバ(301)内に備えられ、
前記2つ以上のセンサ(35、36、313、314)によって測定された前記ガスパラメータの平均ガスパラメータを決定し、
前記決定された平均ガスパラメータに基づいて、前記2つ以上のセンサ(35、36、313、314)の少なくとも1つによって測定される前記ガスパラメータが前記平均ガスパラメータに一致するように、前記処理チャンバ(301)への前記ガス供給を調整するように構成されたコントローラ(40)。 - 少なくとも1つのガス注入口(308、309、310)を有する処理チャンバ(301)、
各々が前記処理チャンバ(301)内のガスパラメータを測定するように構成された2つ以上のセンサ(313、314)、及び
請求項10に記載のコントローラ(40)を備える装置(300)。 - 前記2つ以上のセンサ(313、314)の少なくとも1つは、ラムダセンサ、圧力ゲージ、質量分析計及び残留ガス分析器を含むグループから選択される、請求項11に記載の装置(300)。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2013/069857 WO2015043622A1 (en) | 2013-09-24 | 2013-09-24 | Method for controlling a gas supply and controller |
Publications (2)
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JP2016538427A JP2016538427A (ja) | 2016-12-08 |
JP6318254B2 true JP6318254B2 (ja) | 2018-04-25 |
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JP2016543327A Active JP6318254B2 (ja) | 2013-09-24 | 2013-09-24 | ガス供給を制御するための方法及びコントローラ |
Country Status (7)
Country | Link |
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US (2) | US10174415B2 (ja) |
EP (1) | EP3050073B1 (ja) |
JP (1) | JP6318254B2 (ja) |
KR (1) | KR102099601B1 (ja) |
CN (1) | CN105580103B (ja) |
TW (1) | TWI643975B (ja) |
WO (1) | WO2015043622A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20200017969A1 (en) * | 2018-07-10 | 2020-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device, Method, and Tool of Manufacture |
CN109798443A (zh) * | 2019-03-11 | 2019-05-24 | 北京卫星环境工程研究所 | 用于月球样品实验室高纯氮气供给系统 |
CN110579509A (zh) * | 2019-09-27 | 2019-12-17 | 西南交通大学 | 一种基于IGZO纳米颗粒的ppb级别硫化氢气体传感器及其制备方法 |
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US5942089A (en) * | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
JP2666768B2 (ja) * | 1995-04-27 | 1997-10-22 | 日本電気株式会社 | ドライエッチング方法及び装置 |
JP4695238B2 (ja) * | 1999-12-14 | 2011-06-08 | 東京エレクトロン株式会社 | 圧力制御方法 |
JP2003529926A (ja) * | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
KR100452318B1 (ko) * | 2002-01-17 | 2004-10-12 | 삼성전자주식회사 | 압력조절시스템 및 이를 이용하는 압력조절방법 |
US6901063B2 (en) * | 2002-05-13 | 2005-05-31 | Qualcomm, Incorporated | Data delivery in conjunction with a hybrid automatic retransmission mechanism in CDMA communication systems |
WO2005036607A2 (en) * | 2003-10-08 | 2005-04-21 | Deposition Sciences, Inc. | System and method for feedforward control in thin film coating processes |
US20050120805A1 (en) * | 2003-12-04 | 2005-06-09 | John Lane | Method and apparatus for substrate temperature control |
US20050220984A1 (en) * | 2004-04-02 | 2005-10-06 | Applied Materials Inc., A Delaware Corporation | Method and system for control of processing conditions in plasma processing systems |
US7708802B1 (en) * | 2005-05-23 | 2010-05-04 | Inogen, Inc. | Gas fractionalization apparatus with built-in administrative and self-diagnostic functions |
CN101796215A (zh) * | 2007-07-17 | 2010-08-04 | 应用材料股份有限公司 | 通过压力控制远程等离子体源改进清洁率 |
KR101794069B1 (ko) * | 2010-05-26 | 2017-12-04 | 삼성전자주식회사 | 반도체 제조설비 및 그의 시즈닝 공정 최적화 방법 |
TWM501168U (zh) * | 2014-12-23 | 2015-05-21 | Rui-Kun Lv | 組合架 |
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2013
- 2013-09-24 US US15/024,001 patent/US10174415B2/en active Active
- 2013-09-24 KR KR1020167010710A patent/KR102099601B1/ko active IP Right Grant
- 2013-09-24 CN CN201380079751.0A patent/CN105580103B/zh active Active
- 2013-09-24 JP JP2016543327A patent/JP6318254B2/ja active Active
- 2013-09-24 EP EP13766958.6A patent/EP3050073B1/en active Active
- 2013-09-24 WO PCT/EP2013/069857 patent/WO2015043622A1/en active Application Filing
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2014
- 2014-09-03 TW TW103130498A patent/TWI643975B/zh active
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2017
- 2017-12-22 US US15/852,820 patent/US20180135160A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US10174415B2 (en) | 2019-01-08 |
CN105580103A (zh) | 2016-05-11 |
US20180135160A1 (en) | 2018-05-17 |
KR102099601B1 (ko) | 2020-04-10 |
TWI643975B (zh) | 2018-12-11 |
CN105580103B (zh) | 2018-05-11 |
EP3050073B1 (en) | 2019-11-06 |
TW201527583A (zh) | 2015-07-16 |
US20160244870A1 (en) | 2016-08-25 |
EP3050073A1 (en) | 2016-08-03 |
WO2015043622A1 (en) | 2015-04-02 |
JP2016538427A (ja) | 2016-12-08 |
KR20160058941A (ko) | 2016-05-25 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |