WO2017169612A1 - 導電性積層体の製造方法、積層体および導電性積層体 - Google Patents
導電性積層体の製造方法、積層体および導電性積層体 Download PDFInfo
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Images
Classifications
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/285—Sensitising or activating with tin based compound or composition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0286—Programmable, customizable or modifiable circuits
- H05K1/0287—Programmable, customizable or modifiable circuits having an universal lay-out, e.g. pad or land grid patterns or mesh patterns
- H05K1/0289—Programmable, customizable or modifiable circuits having an universal lay-out, e.g. pad or land grid patterns or mesh patterns having a matrix lay-out, i.e. having selectively interconnectable sets of X-conductors and Y-conductors in different planes
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/054—Continuous temporary metal layer over resist, e.g. for selective electroplating
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0706—Inactivating or removing catalyst, e.g. on surface of resist
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
Definitions
- the present invention relates to a method of manufacturing a conductive laminate, a laminate and a conductive laminate.
- a conductive film in which a conductive layer (conductive fine wire) made of metal or the like is formed on a base material is used for various applications, and in particular, in recent years, the loading rate of touch panels on mobile phones and portable game devices etc. With this rise, the demand for conductive films for capacitive touch panel sensors capable of multipoint detection is rapidly expanding.
- Patent Document 1 discloses “a base layer forming step of forming a base layer containing a polymer having a conjugated diene compound unit which may be hydrogenated and metal oxide particles having an average particle diameter of 400 nm or less, and plating A catalyst application step of bringing a plating catalyst solution containing an catalyst or a precursor thereof into contact with an alkaline plating catalyst solution to apply a plating catalyst or a precursor thereof to the underlayer, and applying the plating catalyst or a precursor thereof And a plating step of forming a metal layer on the base layer by performing plating on the base layer described above.
- Patent No. 5756444 gazette
- the underlayer (plating layer) described in Patent Document 1 can not be patterned by photolithography, and the process becomes complicated in order to form a patterned metal layer. is there. Therefore, the present inventors use an alkaline plating catalyst solution (plating catalyst application solution) as described in Patent Document 1 for a pattern-like plated layer formed in a pattern by photolithography. After applying the plating catalyst, it was tried to form a metal layer on the pattern-like to-be-plated layer using a plating solution. In this case, since the application amount of the plating catalyst with respect to the pattern-like to-be-plated layer becomes high and the metal layer is favorably formed, it was found that the obtained metal layer can have low resistance.
- an alkaline plating catalyst solution plating catalyst application solution
- the metal layer was formed also in the region other than the pattern-like plated layer, and the metal layer could not be formed only at the position corresponding to the pattern-like plated layer. . Furthermore, when the present inventors advanced examination, they have found that the resistance of the formed metal layer is improved depending on the line width of the pattern-like layer to be plated.
- an object of this invention is to provide the manufacturing method of an electroconductive laminated body which can form a low resistance metal layer in the position corresponding to a pattern-like to-be-plated layer, a laminated body, and an electroconductive laminated body.
- the present inventors form a pattern-like to-be-plated layer including a portion with a line width of less than 3 ⁇ m, and plating containing an alkaline plating catalyst application solution and predetermined components
- a liquid By using a liquid, it discovered that a desired effect was acquired, and came to this invention. That is, the present inventors have found that the above problems can be solved by the following configuration.
- a method for producing a conductive laminate comprising a substrate, a pattern-like layer to be plated, and a metal layer, Using the composition for forming a layer to be plated containing a polymerization initiator and the following compound X or composition Y, forming a layer to form a layer to be plated on the substrate; Performing the exposure process in a pattern on the layer to be plated, and performing the development process to form the pattern-like layer to be plated including a portion having a line width of less than 3 ⁇ m; Applying the plating catalyst or the precursor thereof to the patterned plating layer using an alkaline plating catalyst application solution containing the plating catalyst or the precursor thereof; Using the plating solution containing at least one of aminocarboxylic acid and aminocarboxylic acid salt, the above-mentioned pattern-like to-be-plated layer to which the above-mentioned plating catalyst or its precursor is applied is subjected to plating treatment, and the above-mentioned pattern-like
- a substrate A pattern-like to-be-plated layer including a portion disposed on the substrate and having a line width of less than 3 ⁇ m; A metal layer disposed on the patterned plating layer; Have A conductive laminate, wherein a plating catalyst is attached to the pattern-like layer to be plated, and an adhesion amount of the plating catalyst in the pattern-like layer to be plated is 50 mg / m 2 or more.
- a method of manufacturing a conductive laminate, a laminate and a conductive laminate capable of forming a low resistance metal layer at a position corresponding to a pattern-like layer to be plated. it can.
- a numerical range represented using “to” means a range including numerical values described before and after “to” as the lower limit value and the upper limit value.
- the method for producing a conductive laminate of the present invention is a method for producing a conductive laminate having a substrate, a pattern-like to-be-plated layer, and a metal layer.
- the method for producing a conductive laminate of the present invention is A process for forming a layer to be plated formation on the substrate using a composition for forming a layer to be plated containing a polymerization initiator and a compound X or composition Y described later (hereinafter referred to as “plate to be plated Also referred to as “layer formation step”), A step of forming a pattern-like to-be-plated layer including a portion having a line width of less than 3 ⁇ m by carrying out a pattern-like exposure process and a development process on the above-mentioned layer to be plated layer formation Also referred to as a pattern-like to-be-plated layer-forming step)), A step of applying the plating catalyst or the precursor thereof to the pattern-like layer using the al
- the above-mentioned pattern-like to-be-plated layer to which the above-mentioned plating catalyst or its precursor has been applied is subjected to a plating treatment, And forming a metal layer on the layer (hereinafter, also referred to as “metal layer forming step”).
- a low resistance metal layer can be formed at a position corresponding to the pattern-like layer to be plated.
- the reason is as follows.
- an alkaline plating catalyst application solution it is considered that the pattern-like to-be-plated layer swells well and the permeability of the plating catalyst application solution is improved.
- the application amount of the plating catalyst or the precursor thereof to the pattern-like to-be-plated layer becomes high, and it is presumed that a low-resistance metal layer can be formed.
- a Rochelle salt-based plating solution for example, an electroless plating solution Sul cup PEA (trade name, manufactured by Kamimura Kogyo Co., Ltd.) described in paragraph 0101 of Patent Document 1) may be used.
- the pattern selectivity metal layer only at the position corresponding to the pattern-like plated layer
- the formation does not improve. From this, it is presumed that the Rochelle salt-based plating solution is designed so as to cover the entire surface of the object to be plated cleanly even if the deposition rate is low.
- the Rochelle salt-based plating solution is a solution designed in pursuit of roundness, pattern selectivity (forming a metal layer at a position corresponding to the pattern-like layer to be plated) is sacrificed. It is guessed that On the other hand, when using the plating solution of the present invention containing at least one of an aminocarboxylic acid and an aminocarboxylic acid salt, the present inventors are excellent in pattern selectivity when the plating process is interrupted in a short time. And, it was found that the pattern selectivity can be maintained even when the plating time is extended.
- the plating solution of the present invention containing at least one of an aminocarboxylic acid and an aminocarboxylic acid salt has a relatively higher pattern selectivity as compared to the above-mentioned plating solution of Rochelle salt. It is guessed. Furthermore, the present inventors discovered that when the line width of the pattern-like to-be-plated layer exceeds a predetermined value, the resistance of the formed metal layer increases.
- FIGS. 1 to 6 are schematic side views showing one example of the method for producing a conductive laminate of the present invention in a stepwise manner.
- FIG. 1 is a schematic side view for explaining a process of forming a layer to be plated, showing a state in which a layer 14 for forming a layer to be plated is disposed on (directly above) a base 12.
- the layer 14 for to-be-plated layer formation is given on the whole surface of the base material 12, it is not limited to this, The layer 14 for to-be-plated layer formation May be formed.
- the type of the substrate 12 is not particularly limited, and examples thereof include insulating substrates, and more specifically, resin substrates, ceramic substrates, and glass substrates can be used.
- the thickness (mm) of the substrate 12 is not particularly limited, but is preferably 0.01 to 1 mm, and more preferably 0.02 to 0.1 mm, from the viewpoint of balance between handleability and thinning.
- the total light transmittance of the substrate 12 is preferably 85 to 100%.
- the substrate 12 may be a sheet (single sheet) or may be long (continuous).
- the substrate may have a single layer structure or a multilayer structure.
- the substrate 12 may have a support and a primer layer disposed on the support.
- As a support body the material which comprises the base material mentioned above is mentioned.
- the primer layer is located on the outermost surface of the support (the surface on which a layer for forming a pattern-like layer to be plated which will be described later is formed). Thereby, the adhesiveness with respect to the base material of the layer for to-be-plated layer formation (pattern-like to-be-plated layer) improves.
- the thickness of the primer layer is not particularly limited, but generally 0.01 to 100 ⁇ m is preferable, 0.05 to 20 ⁇ m is more preferable, and 0.05 to 10 ⁇ m is more preferable.
- the material in particular of a primer layer is not restrict
- the resin may be, for example, a thermosetting resin, a thermoplastic resin, or a mixture thereof.
- a thermosetting resin an epoxy resin, a phenol resin, a polyimide resin, a polyester resin, a bismaleimide resin, Polyolefin resin, and isocyanate resin etc. are mentioned.
- thermoplastic resin examples include phenoxy resin, polyether sulfone, polysulfone, polyphenylene sulfone, polyphenylene sulfide, polyphenyl ether, polyether imide, and ABS resin (acrylonitrile-butadiene-styrene copolymer) and the like. .
- the thermoplastic resin and the thermosetting resin may be used alone or in combination of two or more.
- a resin containing a cyano group may be used.
- an ABS resin or a polymer containing “a unit having a cyano group in a side chain described in paragraphs 0039 to 0063 of JP 2010-84196 A. "May be used. Rubber components such as NBR rubber (acrylonitrile-butadiene rubber) and SBR rubber (styrene-butadiene rubber) can also be used.
- a urethane resin is mentioned as one of the suitable aspects of the material which comprises a primer layer.
- a urethane resin the reaction product of a diol compound and a diisocyanate compound is mentioned, for example.
- the diol compound for example, ethylene glycol, propylene glycol, 1,2-propanediol, 1,3-propanediol, 1,3-butanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentane Diol, 1,6-hexanediol, 3-methylpentanediol, diethylene glycol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, 2-methyl-1,3-propanediol, 2,2 Diethyl-1,3-propanediol, 2-butyl-2-ethyl-1,3-propanediol, x
- alkylene oxide adducts of these compounds can be mentioned.
- polyalkylene glycol is preferable, and polyethylene glycol, polypropylene glycol, and polytetramethylene glycol are more preferable, from the viewpoint of easily adjusting the surface hardness and the coefficient of friction with the release paper to a predetermined range.
- the average added mole number of oxyalkylene in the polyalkylene glycol is preferably 3 to 20.
- the weight average molecular weight of the polyalkylene glycol is preferably 100 to 2,000.
- the diol compounds may be used alone or in combination of two or more.
- diisocyanate compound examples include 2,4-tolylene diisocyanate, dimer of 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate, Aromatic diisocyanate compounds such as' -diphenylmethane diisocyanate, 1,5-naphthylene diisocyanate, or 3,3'-dimethylbiphenyl-4,4'-diisocyanate, etc .; Or aliphatic diisocyanate compounds such as dimer acid diisocyanate; isophorone diisocyanate, 4,4'-methylenebis (cyclohexyl isocyanate), methylcyclohexane- 2,4 (or 2,6) diisocyanate, or alicyclic diisocyanate compounds such as 1,3- (isocyanatomethyl) cyclohexane; and the like.
- aliphatic diisocyanate compounds such as isophorone diisocyanate or hexamethane diisocyanate are preferable in that the cured product has high transparency.
- a diisocyanate compound may be used individually by 1 type, and may be used in mixture of 2 or more types.
- the urethane resin is synthesized, for example, by adding the above-mentioned diisocyanate compound and diol compound to a known catalyst in an aprotic solvent and heating.
- the molar ratio of the diisocyanate and the diol compound used for the synthesis is not particularly limited and may be appropriately selected depending on the purpose, preferably 1: 1.2 to 1.2: 1.
- a photocurable material may be used as the urethane resin.
- the photocurable urethane resin it is preferable to use a urethane compound (meth) acrylate synthesized from a diisocyanate compound, a diol compound, and a hydroxyalkyl (meth) acrylate.
- urethane di (meth) acrylate is preferable from the viewpoint of easily adjusting the surface hardness and the coefficient of friction with the release paper to a predetermined range, and in particular, urethane di (meth) acrylate oligomer with a weight average molecular weight range described later. Is preferred.
- (meth) acrylate means an acrylate or a methacrylate.
- a diisocyanate compound and a diol compound what was mentioned above is mentioned, Moreover, a preferable aspect is also the same.
- hydroxyalkyl (meth) acrylates examples include hydroxyethyl (meth) acrylate (eg, 2-hydroxyethyl (meth) acrylate), hydroxypropyl (meth) acrylate (eg, 2-hydroxypropyl (meth) acrylate), hydroxy Butyl (meth) acrylate (eg, 2-hydroxybutyl (meth) acrylate), hydroxybutyl (meth) acrylate (eg, 4-hydroxybutyl (meth) acrylate), hydroxyhexyl (meth) acrylate (eg, 6-hydroxyhexyl) (Meth) acrylates or hydroxyl group-containing (meth) acrylates such as pentaerythritol tri (meth) acrylate; their caprolactone modified products or alkyl oxide modified products Hydroxyl group-containing (meth) acrylate modified products represented by: etc .; addition reaction product of monoepoxy compound such as butyl glycidyl
- hydroxyethyl (meth) acrylate or hydroxybutyl (meth) acrylate is preferable from the viewpoint of easily adjusting the surface hardness and the coefficient of friction with the release paper to a predetermined range.
- the hydroxyalkyl (meth) acrylates may be used alone or in combination of two or more.
- reactive dilution monomer examples include alicyclic (meth) acrylates such as isobornyl (meth) acrylate and cyclohexyl (meth) acrylate; or aromatic (meth) acrylates such as phenoxyethyl (meth) acrylate; Be As the reactive dilution monomer, one type may be used alone, or two or more types may be mixed and used.
- Urethane (meth) acrylate can be manufactured by a well-known method. For example, after adding a diol compound to a diisocyanate compound and reacting at 50 to 80 ° C. for about 3 to 10 hours, a hydroxyalkyl (meth) acrylate and an optional reaction diluent monomer, a catalyst such as dibutyltin dilaurate, and methyl hydroquinone And the like, and the reaction is further allowed to react at 60 to 70.degree. C. for about 3 to 12 hours for synthesis.
- a catalyst such as dibutyltin dilaurate, and methyl hydroquinone And the like
- the use ratio of the diisocyanate compound, the diol compound and the hydroxyalkyl (meth) acrylate is not particularly limited as long as it has a desired surface hardness and friction coefficient with release paper, but 0.9 ⁇ (total number of isocyanate groups of diisocyanate compound) / It is preferable that (total number of hydroxyl groups of diol compound and hydroxyalkyl (meth) acrylate) ⁇ 1.1.
- the weight average molecular weight of the urethane (meth) acrylate is 5,000 or more and 120,000 as a polystyrene conversion value by GPC (gel permeation chromatography) method from the viewpoint of easily setting the surface hardness and the friction coefficient with the release paper to a predetermined range.
- GPC gel permeation chromatography
- the conjugated diene compound unit means a repeating unit derived from a conjugated diene compound.
- the conjugated diene compound is not particularly limited as long as it is a compound having a molecular structure having two carbon-carbon double bonds separated by one single bond.
- One of the preferable embodiments of the repeating unit derived from the conjugated diene compound is a repeating unit generated by the polymerization reaction of a compound having a butadiene skeleton.
- the conjugated diene compound unit may be hydrogenated, and when it contains a hydrogenated conjugated diene compound unit, adhesion of the metal layer is further improved, which is preferable. That is, the double bond in the repeating unit derived from the conjugated diene compound may be hydrogenated.
- the polymer having the conjugated diene compound unit which may be hydrogenated may contain an interactive group described later. Preferred embodiments of this polymer include acrylonitrile butadiene rubber (NBR), carboxyl group-containing nitrile rubber (XNBR), acrylonitrile-butadiene-isoprene rubber (NBIR), ABS resin, or hydrogenated products thereof (for example, hydrogenation) Acrylonitrile butadiene rubber) and the like.
- the primer layer contains other additives (eg, sensitizers, antioxidants, antistatic agents, UV absorbers, fillers, particles, flame retardants, surfactants, lubricants, plasticizers, etc.) It may be used to control the primer layer.
- additives eg, sensitizers, antioxidants, antistatic agents, UV absorbers, fillers, particles, flame retardants, surfactants, lubricants, plasticizers, etc.
- the change in absorbance at 525 nm of the substrate before and after staining is preferably 0.05 or less.
- the base material of such a property damage to the base material in the plating catalyst application process described later can be reduced.
- Dyeing conditions After immersing the substrate in a 0.1 M aqueous sodium hydroxide solution at 30 ° C. for 5 minutes, the substrate is taken out, and the substrate is immersed in a 1% by mass aqueous solution of rhodamine 6G for 1 minute.
- the substrate having such properties include hydrogenated acrylonitrile-butadiene rubber (H-NBR) and urethane resin.
- H-NBR hydrogenated acrylonitrile-butadiene rubber
- urethane resin urethane resin.
- the absorbance of the substrate before and after staining can be measured using an apparatus according to a spectrophotometer V-670 (trade name, manufactured by JASCO Corporation).
- the method for forming the layer to be plated layer formation 14 on the substrate 12 is not particularly limited, and known methods (for example, bar coating, spin coating, die coating, dip coating, etc.) can be used. Moreover, after application of the composition for to-be-plated layer forming, from a viewpoint of a handleability and manufacturing efficiency, you may dry-process as needed and may remove the solvent which remains.
- the conditions for the drying treatment are not particularly limited, but from the viewpoint of more excellent productivity, room temperature (20 ° C.) to 220 ° C. (preferably 50 to 120 ° C.) for 1 to 30 minutes (preferably 1 to 10 minutes) It is preferable to carry out.
- the thickness of the layer to be plated is not particularly limited, but is preferably 0.05 to 5 ⁇ m, more preferably 0.1 to 1 ⁇ m, and still more preferably 0.2 to 0.7 ⁇ m.
- the thickness of the above-mentioned to-be-plated layer forming layer is an average thickness, and it is a value obtained by measuring the thickness of arbitrary 10 points of the to-be-plated layer forming layer and arithmetically averaging.
- composition for forming a layer to be plated is formed using the composition for to-be-plated layer formation containing a polymerization initiator and the following compound X or the composition Y.
- compound X functional group that interacts with a plating catalyst or a precursor thereof (hereinafter, also simply referred to as “interactive group”), and a compound composition having a polymerizable group COMPOUND COMPRISING A COMPOUND HAVING A FUNCTIONAL GROUP AND A COMPOUND HAVING A POLYMERIZABLE GROUP
- the compound X is a compound having an interactive group and a polymerizable group.
- the interactive group intends a functional group capable of interacting with the plating catalyst or its precursor applied to the pattern-like plated layer, and for example, a functional group capable of forming an electrostatic interaction with the plating catalyst or its precursor
- a nitrogen-containing functional group, a sulfur-containing functional group, an oxygen-containing functional group, etc. which can form a coordinate with a group, or a plating catalyst or its precursor can be used.
- an ionic polar group such as a carboxy group, a sulfonic acid group, a phosphoric acid group, and a boronic acid group, an ether group or a cyano group is preferable, and an ionic polar group is more preferable.
- the ionic polar group is easily present as ions in the alkaline plating catalyst application solution. Thereby, since the pattern-like to-be-plated layer is hydrophilized, it is estimated that the permeability of the plating catalyst application liquid to the pattern-like to-be-plated layer is further improved.
- the compound X may contain two or more interactive groups.
- the polymerizable group is a functional group capable of forming a chemical bond by energy application, and examples thereof include a radically polymerizable group and a cationically polymerizable group. Among them, a radically polymerizable group is preferable from the viewpoint of more excellent reactivity.
- a radically polymerizable group for example, acrylic acid ester group (acryloyloxy group), methacrylic acid ester group (methacryloyloxy group), itaconic acid ester group, crotonic acid ester group, isocrotonic acid ester group, and maleic acid ester group And unsaturated carboxylic acid ester groups, styryl groups, vinyl groups, acrylamide groups, methacrylamide groups, and the like.
- the compound X may contain two or more types of polymerizable groups.
- the number of polymerizable groups contained in the compound X is not particularly limited, and may be one or two or more.
- the compound X may be a low molecular weight compound or a high molecular weight compound.
- the low molecular weight compound intends a compound having a molecular weight of less than 1000
- the high molecular weight compound intends a compound having a molecular weight of 1000 or more.
- the low molecular weight compound which has the said polymeric group corresponds to what is called a monomer (monomer).
- the polymer compound may be a polymer having a predetermined repeating unit.
- only 1 type may be used and 2 or more types may be used together.
- the weight-average molecular weight of the polymer is not particularly limited, but is preferably 1000 or more and 700,000 or less, more preferably 2000 or more and 200,000 or less in terms of more excellent handleability such as solubility. In particular, from the viewpoint of polymerization sensitivity, 20000 or more is preferable.
- the synthesis method of the polymer having such a polymerizable group and an interactive group is not particularly limited, and known synthesis methods (see paragraphs 0097 to 0125 of patent publication 2009-280905) are used.
- the weight average molecular weight in the present invention is measured by gel permeation chromatography (GPC).
- GPC uses a HLC-8220GPC (manufactured by Tosoh Corporation), TSKgel G5000PW XL, TSKgel G4000PW XL, a TSKgel G2500PW XL (Tosoh Corp., 7.8 mm ID ⁇ 30 cm) using as a column, using 10 mM NaNO 3 solution as eluent . Further, as conditions, the sample concentration is 0.1% by mass, the flow rate is 1.0 ml / min (reference is 0.5 ml / min), the sample injection amount is 100 ⁇ l, the measurement temperature is 40 ° C., RI (differential refraction) Do this using a detector.
- the standard curve is TSK standard POLY (ETHILENE OXIDE): “SE-150”, “SE-30”, “SE-8”, “SE-5”, “SE-2” (manufactured by Tosoh Corporation), and a molecular weight of 3000 And polyethylene glycol of molecular weight 282 and hexaethylene glycol of molecular weight 282.
- a repeating unit having a polymerizable group represented by the following formula (a) (hereinafter, appropriately referred to as a polymerizable group unit) and an interaction represented by the following formula (b)
- Examples include copolymers containing repeating units having a nature group (hereinafter also referred to as interaction group units as appropriate).
- R 1 to R 5 each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group (eg, methyl group, ethyl group, propyl group, and Represents a butyl group etc.).
- the type of substituent is not particularly limited, and examples thereof include a methoxy group, a chlorine atom, a bromine atom, and a fluorine atom.
- R 1 a hydrogen atom, a methyl group or a methyl group substituted with a bromine atom is preferable.
- R 2 a hydrogen atom, a methyl group or a methyl group substituted with a bromine atom is preferable.
- R 3 a hydrogen atom is preferable.
- R 4 a hydrogen atom is preferable.
- R 5 a hydrogen atom, a methyl group or a methyl group substituted with a bromine atom is preferable.
- X, Y and Z each independently represent a single bond or a substituted or unsubstituted divalent organic group.
- divalent organic group a substituted or unsubstituted divalent aliphatic hydrocarbon group (preferably having a carbon number of 1 to 8; for example, an alkylene group such as a methylene group, an ethylene group, and a propylene group), a substituted or substituted group Unsubstituted divalent aromatic hydrocarbon group (preferably having a carbon number of 6 to 12.
- phenylene group For example, phenylene group), -O-, -S-, -SO 2- , -N (R)-(R: alkyl group) And -CO-, -NH-, -COO-, -CONH-, or a combination thereof (eg, an alkyleneoxy group, an alkyleneoxy carbonyl group, an alkylene carbonyloxy group, etc.) and the like.
- O- or a substituted or unsubstituted divalent aromatic hydrocarbon group is preferable, and a single bond, an ester group (-COO-) or an amide group (-CONH-) is more preferable.
- L 1 and L 2 each independently represent a single bond or a substituted or unsubstituted divalent organic group.
- a bivalent organic group it is synonymous with the bivalent organic group described by X, Y, and Z mentioned above.
- L 1 an aliphatic hydrocarbon group or a divalent organic group having a urethane bond or a urea bond (for example, an aliphatic hydrocarbon) in that the synthesis of the polymer is easy and the adhesion of the metal layer is more excellent Group is preferable, and those having 1 to 9 carbon atoms in total are preferable.
- the total number of carbon atoms of L 1 means the total number of carbon atoms contained in the divalent organic group or a substituted or unsubstituted represented by L 1.
- L 2 is a single bond, a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, or a combination thereof in that the adhesion of the metal layer is more excellent preferable.
- L 2 is preferably a single bond or a total of 1 to 15 carbon atoms, and particularly preferably unsubstituted.
- the total number of carbon atoms of L 2 means the total number of carbon atoms contained in the divalent organic group or a substituted or unsubstituted represented by L 2.
- W represents an interactive group.
- the definition of the interactive group is as described above.
- the content of the polymerizable group unit is preferably 5 to 50 mol% with respect to all repeating units in the polymer, from the viewpoint of reactivity (curability, polymerizability) and suppression of gelation in synthesis. 5 to 40 mol% is more preferable. Further, the content of the above-mentioned interactive group unit is preferably 5 to 95% by mole, and 10 to 95% by mole, with respect to all repeating units in the polymer, from the viewpoint of adsorption to the plating catalyst or its precursor. More preferable.
- the repeating unit represented by Formula (A) is the same as the repeating unit represented by said Formula (a), and description of each group is also the same.
- R 5, X and L 2 in the repeating unit represented by formula (B) is the same as R 5, X and L 2 in the repeating unit represented by formula (b), a description of each group Is also the same.
- Wa in the formula (B) represents a group which interacts with the plating catalyst or the precursor thereof except the hydrophilic group represented by V described later or the precursor group thereof. Among them, cyano group and ether group are preferable.
- each R 6 independently represents a hydrogen atom or a substituted or unsubstituted alkyl group.
- U represents a single bond or a substituted or unsubstituted divalent organic group.
- the definition of the divalent organic group is the same as the divalent organic group represented by X, Y and Z described above. As U, the synthesis of the polymer is easy, and the adhesion of the metal layer is more excellent, and a single bond, an ester group (-COO-), an amide group (-CONH-), an ether group (-O-), or Preferred is a substituted or unsubstituted divalent aromatic hydrocarbon group.
- L 3 represents a single bond or a substituted or unsubstituted divalent organic group.
- the definition of the divalent organic group is the same as the divalent organic group represented by L 1 and L 2 described above.
- L 3 is a single bond or a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, or a combination thereof, in that the polymer synthesis is easy and the adhesion of the metal layer is more excellent. Is preferred
- V represents a hydrophilic group or a precursor group thereof.
- the hydrophilic group is not particularly limited as long as it is a group exhibiting hydrophilicity, and examples thereof include a hydroxyl group and a carboxy group.
- the precursor group of a hydrophilic group means a group which produces a hydrophilic group by a predetermined treatment (for example, treatment with acid or alkali), for example, a carboxy protected with THP (2-tetrahydropyranyl group) Groups and the like.
- the hydrophilic group is preferably an ionic polar group in terms of interaction with the plating catalyst or the precursor thereof.
- the ionic polar group examples include a carboxy group, a sulfonic acid group, a phosphoric acid group, and a boronic acid group.
- a carboxy group is preferable from the viewpoint of appropriate acidity (does not decompose other functional groups).
- the preferred content of each unit in the second preferred embodiment of the above-mentioned polymer is as follows.
- the content of the repeating unit represented by the formula (A) is 5 to 50 with respect to all repeating units in the polymer from the viewpoint of reactivity (curability, polymerizability) and suppression of gelation in synthesis.
- the mole% is preferred, and 5 to 30 mole% is more preferred.
- the content of the repeating unit represented by the formula (B) is preferably 5 to 75 mol%, more preferably 10 to 70 mol, based on all repeating units in the polymer, from the viewpoint of adsorption to the plating catalyst or its precursor. % Is more preferable.
- the content of the repeating unit represented by the formula (C) is preferably 10 to 70% by mole, and more preferably 20 to 60% by mole, based on all repeating units in the polymer, from the viewpoint of developability with aqueous solution and moisture adhesion. Is more preferable, and 30 to 50 mol% is more preferable.
- This polymer can be produced by known methods, such as those in the literature listed above.
- R 11 to R 13 each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group.
- the unsubstituted alkyl group includes a methyl group, an ethyl group, a propyl group or a butyl group.
- a substituted alkyl group a methyl group, an ethyl group, a propyl group, or a butyl group substituted with a methoxy group, a chlorine atom, a bromine atom, or a fluorine atom etc. is mentioned.
- R 11 a hydrogen atom or a methyl group is preferable.
- R 12 a hydrogen atom is preferable.
- R 13 a hydrogen atom is preferable.
- L 10 represents a single bond or a divalent organic group.
- a divalent organic group a substituted or unsubstituted aliphatic hydrocarbon group (preferably having a carbon number of 1 to 8), a substituted or unsubstituted aromatic hydrocarbon group (preferably having a carbon number of 6 to 12), -O -, -S-, -SO 2- , -N (R)-(R: alkyl group), -CO-, -NH-, -COO-, -CONH-, or a combination thereof (eg, alkylene And oxy group, alkylene oxycarbonyl group, alkylene carbonyloxy group and the like.
- a substituted or unsubstituted aliphatic hydrocarbon group a methylene group, an ethylene group, a propylene group, or a butylene group, or these groups are substituted by a methoxy group, a chlorine atom, a bromine atom, a fluorine atom or the like Is preferred.
- the substituted or unsubstituted aromatic hydrocarbon group an unsubstituted phenylene group or a phenylene group substituted with a methoxy group, a chlorine atom, a bromine atom, a fluorine atom or the like is preferable.
- one of the preferable embodiments of L 10 includes —NH—aliphatic hydrocarbon group— or —CO—aliphatic hydrocarbon group—.
- W is the same as the definition of W in Formula (b), and represents an interactive group.
- the definition of the interactive group is as described above.
- preferred embodiments of W include an ionic polar group, and a carboxy group is more preferred.
- R 10 represents a hydrogen atom, a metal cation or a quaternary ammonium cation.
- the metal cation include alkali metal cations (sodium ion and calcium ion), copper ion, palladium ion, and silver ion.
- metal cations monovalent or divalent ones are mainly used, and when divalent ones (for example, palladium ions) are used, n to be described later represents 2.
- a quaternary ammonium cation a tetramethyl ammonium ion, a tetrabutyl ammonium ion, etc. are mentioned, for example.
- a hydrogen atom is preferable from the viewpoint of adhesion of a plating catalyst or a precursor thereof and metal residues after patterning.
- L 10 in the formula (1) are the same as defined in L 10 in the above-mentioned formula (X), a single bond, or a divalent organic group.
- the definition of the divalent organic group is as described above.
- R 11 ⁇ R 13 in the formula (1) has the same meaning as the definition of R 11 ⁇ R 13 in the above-mentioned formula (X), represents a hydrogen atom or a substituted or unsubstituted alkyl group,. Preferred embodiments of R 11 to R 13 are as described above.
- n represents an integer of 1 or 2. Among them, n is preferably 1 from the viewpoint of the availability of the compound.
- R 10 , R 11 and n are as defined above.
- L 11 represents an ester group (-COO-), an amido group (-CONH-), or a phenylene group.
- solvent resistance eg, alkali solvent resistance
- L 12 represents a single bond, a divalent aliphatic hydrocarbon group (preferably having 1 to 8 carbon atoms, more preferably 3 to 5 carbon atoms), or a divalent aromatic hydrocarbon group.
- the aliphatic hydrocarbon group may be linear, branched or cyclic.
- L 11 represents a phenylene group.
- the molecular weight of the compound represented by the formula (1) is not particularly limited, but is preferably 100 to 1000, more preferably 100 to 300 from the viewpoint of volatility, solubility in a solvent, film forming ability, and handleability. preferable.
- Composition Y is a composition comprising a compound having an interactive group and a compound having a polymerizable group. That is, the to-be-plated layer forming layer contains two types of a compound having an interactive group and a compound having a polymerizable group. The definition of the interactive group and the polymerizable group is as described above.
- the compound having an interactive group is a compound having an interactive group. The definition of the interactive group is as described above.
- Such a compound may be a low molecular weight compound or a high molecular weight compound.
- a polymer having a repeating unit represented by the above-mentioned formula (b) for example, polyacrylic acid
- a polymerizable group is not contained in the compound which has an interactive group.
- the compound having a polymerizable group is a so-called monomer, and is preferably a polyfunctional monomer having two or more polymerizable groups in that the hardness of the formed pattern-like layer to be plated is more excellent.
- the polyfunctional monomer it is preferable to use a monomer having 2 to 6 polymerizable groups.
- the molecular weight of the polyfunctional monomer to be used is preferably 150 to 1000, more preferably 200 to 800, from the viewpoint of molecular mobility during the crosslinking reaction that affects the reactivity.
- the distance between the plurality of polymerizable groups is preferably 1 to 15 in terms of the number of atoms.
- the compound having a polymerizable group may contain an interactive group.
- R 20 represents a polymerizable group.
- the definition of the polymerizable group is as described above.
- L represents a single bond or a divalent organic group.
- the definition of the divalent organic group is as described above.
- Q represents an n-valent organic group.
- n-valent organic group a group represented by the following formula (1A), a group represented by the following formula (1B),
- n represents an integer of 2 or more, preferably 2 to 6.
- polyfunctional (meth) acrylamide is not particularly limited as long as it has two or more (preferably, 2 or more and 6 or less) (meth) acrylamide groups.
- tetrafunctional (meth) acrylamides represented by the following general formula (A) can be more preferably used from the viewpoint of being excellent in the curing speed of the layer to be plated formation.
- (meth) acrylamide is a concept including both acrylamide and methacrylamide.
- the tetrafunctional (meth) acrylamide represented by the above general formula (A) can be produced, for example, by the production method described in Japanese Patent No. 5486536.
- R represents a hydrogen atom or a methyl group.
- a plurality of R may be the same or different.
- the mass ratio of the compound having an interactive group to the compound having a polymerizable group is not particularly limited. From the viewpoint of the balance between the strength of the plating layer and the plating suitability, 0.1 to 10 is preferable, and 0.5 to 5 is more preferable.
- content in particular of the compound X (or composition Y) is not restrict
- limited 50 mass% or more is preferable with respect to 100 mass% of total solids in the composition for to-be-plated layer forming, 80 mass% or more is more preferable.
- the upper limit is not particularly limited, but is preferably 99.5% by mass or less.
- the composition for to-be-plated layer forming contains a polymerization initiator.
- the polymerization initiator By including the polymerization initiator, the reaction between the polymerizable groups in the exposure processing proceeds more efficiently.
- a polymerization initiator A well-known polymerization initiator (what is called a photopolymerization initiator) etc. can be used.
- polymerization initiators examples include benzophenones, acetophenones, ⁇ -aminoalkylphenones, benzoins, ketones, thioxanthones, benzyls, benzil ketals, oxsim esters, ansolones, tetramethylthiuram monosulfide And bisacyl phosphinoxides, acyl phosphine oxides, anthraquinones, azo compounds and derivatives thereof.
- the content of the polymerization initiator is not particularly limited, but it is 0.1 to 20 mass based on 100% by mass of the compound having a polymerizable group in the composition for forming a layer to be plated, in terms of the curability of the layer to be plated. % Is preferable, and 0.5 to 10% by mass is more preferable.
- the composition for to-be-plated layer forming of this invention contains surfactant.
- the mask after the exposure processing is easily removed by the action of the surfactant contained in the layer to be plated formation, and adhesion of part of the layer to be plated formation to the mask can also be suppressed. .
- contamination of the mask can be suppressed, there is also a process advantage that the number of times of cleaning of the mask can be reduced or eliminated.
- surfactant various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used.
- fluorine-based surfactants and silicone-based surfactants are preferable, and fluorine-based surfactants are more preferable. Only one surfactant may be used, or two or more surfactants may be combined.
- fluorine-based surfactant for example, W-AHE and W-AHI (all, made by Fuji Film Co., Ltd.), Megafac F171, F172, F173, F176, F177, F141, F142, The F143, the F144, the R30, the F437, the F475, the F482, the F554, the F780, and the F781F (all manufactured by DIC Corporation), the Florard FC430, the FC431, and the FC171 (all, Sumitomo 3M Co., Ltd.), Surfron S-382, SC-101, SC-103, SC-104, SC-105, SC1068, SC-381, SC-383, S393, and ST KH-40 (above, manufactured by Asahi Glass Co., Ltd.), and PF636, PF656, PF6320, PF6 20 and PF7002 (OMNOVA Inc.) and the like.
- W-AHE and W-AHI all, made by Fuji Film Co., Ltd.
- silicone surfactant Commercially available products can be used as the silicone surfactant described above, and, for example, Toray silicone DC3PA, SH7PA, DC11PA, SH21PA, SH21PA, SH28PA, SH29PA, SH30PA, and SH8400 (above, Toray Dow Corning Co., Ltd., TSF-4440, TSF-4300, TSF-4445, TSF-4460 and TSF-4452 (above, Momentive Performance Materials Inc.), KP341, KF6001 and KF6002 (above, Shin-Etsu Silicone ( Co., Ltd., and BYK 307, BYK 323 and BYK 330 (above, manufactured by Big Chemie Co., Ltd.) and the like.
- Toray silicone DC3PA, SH7PA, DC11PA, SH21PA, SH21PA, SH28PA, SH29PA, SH30PA, and SH8400 aboveve, Toray Dow Corning Co., Ltd., TSF-4440, TSF-4300, TSF-44
- the content of the surfactant is 0.005 to 0.5% by mass with respect to 100% by mass of the total amount of the composition for forming a layer to be plated
- 0.01 to 0.1% by mass is more preferable, and 0.01 to 0.05% by mass is more preferable.
- the layer composition for forming a layer to be plated includes other additives (for example, organic solvents, sensitizers, curing agents, polymerization inhibitors, antioxidants, antistatic agents, fillers, particles, flame retardants, lubricants and plasticizers Etc. may be added as needed.
- organic solvents for example, organic solvents, sensitizers, curing agents, polymerization inhibitors, antioxidants, antistatic agents, fillers, particles, flame retardants, lubricants and plasticizers Etc.
- organic solvents for example, organic solvents, sensitizers, curing agents, polymerization inhibitors, antioxidants, antistatic agents, fillers, particles, flame retardants, lubricants and plasticizers Etc.
- isopropanol and propylene glycol-1-monomethyl are preferable in that the functions of the silicone surfactant and the fluorosurfactant among the above surfactants are further exhibited.
- It is preferably a hydrophilic solvent such as ether-2-acetate.
- Pattern-like to-be-plated layer formation process In the pattern-like to-be-plated layer forming step, the above-mentioned layer to be plated formation is exposed in a pattern, and development is carried out, and the pattern-like to be plated It is a process of forming a layer.
- the exposure processing method is not particularly limited, and examples thereof include a method of irradiating the layer to be plated with exposure light through a mask.
- FIG. 2 is a schematic side view which shows an example of the exposure process with respect to the layer 14 for to-be-plated layer forming.
- the layer to be plated 14 is exposed to light through an exposed area (exposed area) 14 a which is a part irradiated with light by passing through the opening 52 of the mask 50 by the exposure process.
- an unexposed area (unexposed area) 14b which is an unexposed area.
- the layer to be plated and the mask are brought into close contact under vacuum, and the layer to be plated is exposed in a pattern.
- the pattern accuracy of the pattern-like to-be-plated layer formed becomes excellent (that is, the pattern-like to-be-plated layer corresponding to the opening size of a mask is obtained).
- oxygen inhibition during polymerization of the layer-to-be-plated can be reduced, and a pattern-like layer-to-be-plated with excellent curability can be obtained.
- vacuum is a concept including negative pressure that indicates a pressure lower than the standard atmospheric pressure.
- the pressure in vacuum is preferably 200 Pa or less, more preferably 150 Pa or less, and still more preferably 0.01 to 100 Pa.
- exposure processing exposure with light of the optimum wavelength is carried out according to the material of the layer to be plated layer formation 14 used, and for example, a light irradiation mechanism by a UV (ultraviolet light) lamp and visible light is used.
- the irradiation apparatus etc. which were equipped are used.
- the light source include a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp, and a carbon arc lamp.
- electron beams, X-rays, ion beams, and far infrared rays can also be used.
- the wavelength of light to be irradiated in the exposure treatment is preferably 300 nm or less, and more preferably 200 to 270 nm, from the viewpoint that a finer pattern can be formed.
- the exposure time varies depending on the reactivity of the material of the layer to be plated and the light source, but is usually between 10 seconds and 5 hours.
- the exposure energy may be about 10 to 8000 mJ, preferably in the range of 50 to 3000 mJ.
- the type of the mask 50 is not particularly limited, and, for example, a glass mask (a chromium mask in which the surface of the glass is covered with a chromium film, an emulsion mask in which the surface of the glass is covered with a film containing gelatin and silver halide, etc.) And well-known masks, such as a film mask (polyester film), can be used.
- the method for producing a conductive laminate of the present invention may have the step of removing the mask after the above-mentioned exposure processing.
- FIG. 3 is a schematic side view showing how the mask 50 is removed after the exposure processing and before the development processing described later. Although the example shown in FIG. 3 shows the case where the mask 50 is removed before the development process described later, the present invention is not limited thereto. The process may be performed simultaneously with the development process or may be performed after the development process. Good.
- the development process is performed after the exposure process. Thereby, a pattern-like to-be-plated layer is formed.
- the method of development treatment is not particularly limited, but a method of immersing the layer to be plated formation after the exposure treatment with a developer (alkaline solution, organic solvent, etc.), and the surface of the layer to be plated Although the method etc. of apply
- FIG. 4 is a schematic side view showing an example of a state in which the pattern-like layer to be plated 14A is formed by development processing.
- FIG. 4 the case where development processing is processing which removes unexposed part 14b (refer FIG. 3) among the layers 14 for to-be-plated layer formation is shown. Thereby, the exposure part 14a is patterned, and the pattern-like to-be-plated layer 14A which has a shape equivalent to the opening part 52 of a pattern is obtained.
- the example of FIG. 4 shows the case where the to-be-plated layer forming layer 14 is formed using the so-called negative type to-be-plated layer forming composition.
- FIG. 4 shows the case where the developing process removes the unexposed portion 14b
- the developing process may remove the exposed portion 14a to leave the unexposed portion 14b.
- the layer 14 for to-be-plated layer formation is formed using what is called a positive type composition for to-be-plated layer formation.
- the pattern-like to-be-plated layer obtained as mentioned above contains the part which is 1 micrometer or more and less than 3 micrometers, including the part whose line
- the line width of the patterned layer to be plated is preferably narrow in a region where transparency and visibility (that metal wiring is not visible) is required, and in such a region, the line width is 1 ⁇ m or more and less than 3 ⁇ m More preferable.
- the line width of the pattern-like to-be-plated layer is It refers to the width of the pattern-like plated layer in the direction orthogonal to the extending direction.
- the contact angle of the surface of the pattern-like plated layer 14A obtained as described above is preferably 90 to 120 °, more preferably 100 to 120 °, and 105 to 120 °. More preferable.
- the contact angle of the pattern-like layer to be plated means the contact angle with water, and is measured using a tangent method as a measurement method.
- the plating catalyst application step is a step of applying the plating catalyst or the precursor thereof to the pattern-like to-be-plated layer using an alkaline plating catalyst application solution containing a plating catalyst or a precursor thereof.
- a plating catalyst or a precursor layer thereof (hereinafter, also simply referred to as a “plating catalyst layer”) 20 is formed on the pattern-like layer 14A.
- the plating catalyst layer 20 was formed only on the upper surface of the pattern-like to-be-plated layer 14A was shown, it is not limited to this. , May be formed on the entire surface of the pattern-like layer to be plated 14A.
- a plating catalyst or its precursor is provided to a pattern-like to-be-plated layer.
- the above-mentioned interactive group contained in the pattern-like to-be-plated layer adheres (adsorbs) the applied plating catalyst or its precursor depending on its function. More specifically, a plating catalyst or a precursor thereof is applied onto the surface of the patterned plating layer.
- the plating catalyst or a precursor thereof functions as a catalyst or an electrode of the plating process. Therefore, the type of plating catalyst or precursor thereof to be used is appropriately determined depending on the type of plating process.
- the application of the plating catalyst or its precursor is carried out using an alkaline plating catalyst application solution containing the plating catalyst or its precursor. Thereby, a plating catalyst or its precursor and a pattern-like to-be-plated layer contact.
- a method of applying a plating catalyst or a precursor thereof for example, a method of applying a plating catalyst application liquid on a pattern-like plating layer, and a laminate in which a pattern-like plating layer is formed in the plating catalyst application liquid The method of immersing etc. are mentioned.
- the contact time between the plating catalyst application solution and the pattern-like layer to be plated is preferably about 30 seconds to 24 hours, and more preferably about 1 minute to 1 hour.
- an electroless plating catalyst can be preferably used as a plating catalyst or a precursor thereof.
- the electroless plating catalyst any catalyst can be used as long as it becomes an active nucleus at the time of electroless plating, and specifically, a metal (having a lower ionizing tendency than Ni) having a catalytic ability for autocatalytic reduction reaction And the like) and the like.
- a metal having a lower ionizing tendency than Ni having a catalytic ability for autocatalytic reduction reaction And the like
- Specific examples thereof include Pd, Ag, Cu, Ni, Pt, Au, and Co. Among them, Ag, Pd, Pt, and Cu are preferable in terms of high catalytic ability.
- the electroless plating catalyst precursor can be used without particular limitation as long as it can be an electroless plating catalyst by a chemical reaction.
- the metal ions of the metals listed above as the electroless plating catalyst are mainly used.
- the metal ion which is an electroless plating catalyst precursor becomes a zerovalent metal which is an electroless plating catalyst by a reduction reaction.
- metal ions that are electroless plating catalyst precursors may be separately converted to a zero-valent metal by a reduction reaction before being immersed in the electroless plating bath to be used as an electroless plating catalyst .
- the precursor of the electroless plating catalyst may be immersed in the electroless plating bath as it is, and may be changed to a metal (electroless plating catalyst) by the reducing agent in the electroless plating bath.
- the metal ion which is an electroless-plating catalyst precursor is provided to a pattern-like to-be-plated layer using a metal salt.
- the metal salt to be used is not particularly limited as long as it is dissolved in an appropriate solvent and dissociated into a metal ion and a base (anion), and M (NO 3 ) n , MCl n , M 2 / n (SO 4 ), and M 3 / n (PO 4 ) (M represents an n-valent metal atom).
- the said metal salt dissociated can be used suitably.
- Ag ion, Cu ion, Ni ion, Co ion, Pt ion, and Pd ion can be mentioned.
- those capable of multidentate coordination are preferred, and in particular, Ag ions, Pd ions and Cu ions are preferred in view of the number of types of functional groups capable of coordination and the catalytic ability.
- a zero-valent metal can also be used as a catalyst used for direct electroplating without electroless plating.
- the plating catalyst or the precursor thereof may be a metal colloid or a metal ion in the plating catalyst application solution, but the plating catalyst or the precursor thereof is at a position corresponding to the pattern-like layer to be plated It is preferable that it is a metal ion from the point of being easy to be provided.
- the concentration of the plating catalyst or its precursor in the plating catalyst application solution is not particularly limited, but is preferably 0.001 to 50% by mass, and more preferably 0.005 to 30% by mass.
- the plating catalyst application solution preferably contains a solvent.
- the solvent is not particularly limited as long as it can disperse or dissolve the plating catalyst or the precursor thereof, and, for example, water and / or an organic solvent can be preferably used.
- the organic solvent a solvent capable of penetrating the pattern-like plated layer is preferable.
- acetone methyl acetoacetate, ethyl acetoacetate, ethylene glycol diacetate, cyclohexanone, acetylacetone, acetophenone, 2- (1-cyclohexenyl) cyclohexanone
- Propylene glycol diacetate, triacetin, diethylene glycol diacetate, dioxane, N-methyl pyrrolidone, dimethyl carbonate, and dimethyl cellosolve can be used.
- the plating catalyst application liquid may contain a swelling agent, a surfactant, a pH adjuster, and the like, as necessary.
- the plating catalyst application solution exhibits alkalinity (pH is more than 7), but the pH is preferably 9 or more, and more preferably 10 or more.
- the upper limit value of pH is not particularly limited, but is preferably 13 or less from the viewpoint of reducing damage to the pattern-like plated layer.
- the plating catalyst application solution can be easily adjusted to a desired pH by using a pH adjuster such as sodium hydroxide and potassium hydroxide, for example.
- the pH in the present invention is measured using an apparatus based on a pH meter F-74 (trade name, manufactured by HORIBA) at a temperature of 25 ° C. for the plating catalyst application solution.
- the plating solution containing at least one of an aminocarboxylic acid and an aminocarboxylic acid salt is used to perform a plating process on the above-mentioned pattern-like to-be-plated layer to which the above-mentioned plating catalyst or its precursor is applied. And forming the metal layer on the pattern-like layer to be plated.
- the metal layer 25 is formed on the pattern-like layer to be plated 14A.
- the metal layer 25 is formed at a position corresponding to the plating catalyst layer 20.
- the metal layer 25 corresponds to the pattern-like layer to be plated 14A. It will be formed on the entire surface.
- the method of plating treatment is not particularly limited, and examples thereof include electroless plating treatment and electrolytic plating treatment (electroplating treatment).
- the electroless plating process may be performed alone, or after the electroless plating process is performed, the electrolytic plating process may be further performed.
- so-called silver mirror reaction is included as a type of the above-mentioned electroless plating process.
- the metal ions deposited may be reduced by a silver mirror reaction or the like to form a desired metal layer, and electrolytic plating may be performed thereafter.
- the procedures of the electroless plating process and the electrolytic plating process will be described in detail.
- the electroless plating process refers to an operation of depositing a metal by a chemical reaction using a solution (a plating solution described later) in which metal ions to be deposited as plating are dissolved.
- the electroless plating in this step is carried out, for example, by washing the laminate provided with the pattern-like plated layer to which the electroless plating catalyst has been applied, to remove excess electroless plating catalyst (metal), and then the electroless plating bath. It is preferable to carry out by immersing in (a plating solution described later).
- a known electroless plating bath can be used as the electroless plating bath.
- the immersion time in the electroless plating bath is preferably about 1 minute to 6 hours, and more preferably about 1 minute to 3 hours.
- the temperature of the electroless plating bath is preferably 25 to 70 ° C.
- the laminate is washed with water to remove excess electroless plating catalyst precursor (such as a metal salt), and then immersed in an electroless plating bath. In this case, reduction of the electroless plating catalyst precursor and subsequent electroless plating are performed in the electroless plating bath.
- electroless-plating bath used here, a well-known electroless-plating bath can be used similarly to the above.
- the reduction of the electroless plating catalyst precursor may be carried out as a separate step before the electroless plating by preparing a catalyst activation solution (reduction solution) separately from the above-described embodiment using the electroless plating bath. It is possible.
- the plating solution used in the metal layer forming step in the method for producing a conductive laminate of the present invention contains at least one of aminocarboxylic acid and aminocarboxylic acid salt, and further contains metal ions for plating and a solvent. Is preferred.
- the plating solution contains at least one of an aminocarboxylic acid and an aminocarboxylic acid salt.
- the aminocarboxylic acid refers to a compound having an amino group and a carboxy group.
- the amino group may be any of a primary amino group, a secondary amino group, and a tertiary amino group.
- aminocarboxylic acid and aminocarboxylic acid salt examples include glycine, ethylenediaminetetraacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, triethylenetetramine hexaacetic acid, nitrilotriacetic acid, hydroxyethyliminodiacetic acid, L-aspartic acid N, N-diacetic acid and hydroxyiminodisuccinic acid, and salts thereof and the like can be mentioned.
- the aminocarboxylic acid and the aminocarboxylic acid salt may be used alone or in combination of two or more.
- the content of the aminocarboxylic acid and the aminocarboxylic acid salt is preferably 0.5 to 5% by mass, and more preferably 1.5 to 3% by mass with respect to 100% by mass of the total mass of the plating solution.
- the plating solution preferably contains metal ions for plating.
- the metal ions for plating exist as ions in the plating solution by adding a metal to the plating solution.
- metals added to the plating solution include copper, tin, lead, nickel, gold, silver, palladium, and rhodium, and among them, copper, silver and gold are preferable from the viewpoint of conductivity. Copper is more preferred.
- the concentration of metal ions for plating in the plating solution is not particularly limited, but is preferably 0.1 to 5% by mass, and more preferably 0.5 to 1.5% by mass.
- the plating solution preferably contains a solvent.
- Solvents include water and organic solvents.
- the organic solvent is preferably a water-soluble solvent, and specifically, ketones such as acetone and alcohols such as methanol, ethanol and isopropanol are preferably used.
- a solvent may be used individually by 1 type, and may use 2 or more types together.
- the plating solution may contain, in addition to the components described above, known additives such as a reducing agent and an additive (stabilizer) that improves the stability of metal ions.
- additives such as a reducing agent and an additive (stabilizer) that improves the stability of metal ions.
- Electroplating can be performed. As described above, in the present step, electroplating may be performed after the above-described electroless plating, if necessary. In such an embodiment, the thickness of the metal layer to be formed can be appropriately adjusted.
- a conventionally known method can be used as the method of electroplating.
- copper, chromium, lead, nickel, gold, silver, tin, zinc etc. are mentioned, From a conductive viewpoint, copper, gold and silver are preferable, and copper is more preferable. .
- the line width of the metal layer is preferably 0.1 to 10 ⁇ m, and more preferably 0.5 to 5 ⁇ m.
- the line width of the metal layer means, for example, the wiring when the wiring pattern is viewed in plan when the metal layer formed on the patterned plating layer is a wiring pattern (such as a lead wiring described later). Refers to the width of the wiring in the direction orthogonal to the direction in which the The line width of the metal layer can be controlled by the plating time, the concentration of metal ions in the plating solution, the temperature of the plating solution, and the like.
- the thickness of the metal layer can be controlled by the plating treatment time, the concentration of metal ions in the plating solution, the temperature of the plating solution, and the like, and is preferably 0.2 to 2 ⁇ m, and more preferably 0.4 to 1 ⁇ m. .
- the pattern-like to-be-plated layer 14A and the metal layer 25 are formed in one side of the base 12, it is not limited to this, and may be formed also on the other side of the base 10. Good. Also in this case, it can be formed in the same manner as the method described above.
- the conductive laminate obtained by the method for producing a conductive laminate according to the present invention can be applied to various applications, such as a touch panel (or touch panel sensor), a semiconductor chip, various electric wiring boards, FPC (Flexible printed circuits)
- the present invention can be applied to various applications such as a chip on film (COF), a tape automated bonding (TAB), an antenna, a multilayer wiring board, and a mother board.
- COF chip on film
- TAB tape automated bonding
- an antenna a multilayer wiring board
- a mother board Especially, it is preferable to use for a touch panel sensor (electrostatic capacitance type touch panel sensor).
- a touch panel sensor electrostatic capacitance type touch panel sensor
- a touch panel sensor a combination of a touch panel sensor and various display devices (for example, a liquid crystal display device and an organic EL (Electro Luminescence) display device) is called a touch panel.
- a touch panel a so-called capacitive touch panel is preferably mentioned.
- FIG. 7 One embodiment in the case of applying the conductive laminated body obtained by the manufacturing method of the conductive laminated body of this invention to a touch panel sensor is shown in FIG.
- the detection electrode 22 and the lead wire 24 are made of the above-described metal layer.
- it is obtained by forming the pattern-like to-be-plated layer 14A at the position where the detection electrode 22 and the lead-out wiring 24 are to be arranged, and forming a metal layer on them. Be That is, the pattern-like to-be-plated layer 14A is disposed between the detection electrode 22 and the lead wire 24 and the base material 12.
- the detection electrode 22 functions as a sensing electrode that senses a change in capacitance, and a sensing unit (sensing unit) Configure.
- the detection electrode 22 has a role of detecting an input position in the X direction of the finger of the operator approaching the input area of the touch panel sensor, and has a function of generating a capacitance between the detection electrode 22 and the finger. There is.
- the detection electrodes 22 are electrodes which extend in a first direction (X direction) and are arranged at predetermined intervals in a second direction (Y direction) orthogonal to the first direction.
- the lead-out wiring 24 is a member that plays a role of applying a voltage to the detection electrode 22.
- a layered product of the present invention has a substrate and a pattern-like to-be-plated layer including a portion disposed on the substrate and having a line width of less than 3 ⁇ m, and the pattern-like to-be-plated layer is plated
- the catalyst or the precursor thereof is attached, and the adhesion amount of the plating catalyst or the precursor thereof in the pattern-like layer to be plated is 50 mg / m 2 or more.
- the laminate of the present invention can be obtained by performing the process of forming a layer to be plated, the process of forming a pattern-like layer to be plated, and the process of applying a plating catalyst among the above-described methods of producing a conductive laminate.
- the laminated body of this invention is manufactured without performing a metal layer formation process among the manufacturing methods of the electroconductive laminated body mentioned above.
- a low resistance metal layer can be formed at a position corresponding to the pattern-like plated layer.
- the details of the substrate, the pattern-like to-be-plated layer, the plating catalyst, or the precursor thereof included in the laminate of the present invention are the same as described in the method for producing the conductive laminate, and thus the description thereof is omitted. .
- the adhesion amount of the plating catalyst or its precursor is as high as 50 mg / m 2 or more.
- the plating initial stage uniformity The metal layer is uniformly formed on the to-be-plated layer in the early stage of a metal layer formation process
- the deposition amount of the plating catalyst or the precursor thereof is 50 mg / m 2 or more, preferably 50 to 1000 mg / m 2 .
- the deposition amount of the plating catalyst or its precursor is measured using a glow discharge optical emission analyzer (GD-OES). Specifically, a value obtained by integrating counts of signals derived from the plating catalyst or its precursor in the depth direction using a glow discharge optical emission analyzer with respect to the pattern-like plated layer to which the plating catalyst or its precursor has been attached Is calculated by dividing by the area of the measurement area of the pattern-like plated layer used for the measurement.
- GD-OES glow discharge optical emission analyzer
- the conductive laminate of the present invention comprises a substrate, a pattern-like to-be-plated layer including a portion disposed on the substrate and having a line width of less than 3 ⁇ m, and a metal disposed on the pattern-like to-be-plated layer.
- the plating catalyst adheres to the pattern-like to-be-plated layer, and the adhesion amount of the plating catalyst in the pattern-like to-be-plated layer is 50 mg / m 2 or more.
- the conductive laminate of the present invention can be obtained using the above-described method for producing a conductive laminate. Therefore, when the laminate of the present invention is used, a low resistance metal layer can be formed at the position corresponding to the pattern-like layer to be plated.
- the details of the substrate, the pattern-like to-be-plated layer, the plating catalyst, and the metal layer contained in the conductive laminate of the present invention are as described in the method for producing a conductive laminate, so Omit.
- the conductive laminate of the present invention is obtained by the above-described method, so that the deposition amount of the plating catalyst or the precursor thereof becomes as high as 50 mg / m 2 or more. This improves the initial plating uniformity (that the metal layer is uniformly formed on the layer to be plated in the early stage of the metal layer formation step), and as a result, the conduction is ensured even in the state where the thickness of the plating film is thin. As a result, fine interconnections with good conduction can be formed.
- the adhesion amount of the plating catalyst is 50 mg / m 2 or more, preferably 50 to 1000 mg / m 2 .
- the method of measuring the adhesion amount of the plating catalyst or the precursor thereof is as described above.
- Example 1 The conductive laminate (conductive film) of Example 1 was produced as follows. In addition, in preparation of the conductive film of Example 1, the composition for primer layer formation prepared as follows and the composition 1 for to-be-plated layer formation were used.
- composition for forming primer layer A solution of 100 g of hydrogenated nitrile butadiene rubber (trade name "Zetpole 0020", manufactured by Nippon Zeon) dissolved in 900 g of cyclopentanone (manufactured by Tokyo Chemical Industry Co., Ltd.) was used as a composition for forming a primer layer.
- composition 1 for forming a layer to be plated Polyacrylic acid (manufactured by Wako Pure Chemical Industries, Ltd., weight average molecular weight 80000 to 150000), tetrafunctional acrylamide (compound in which “R” in the following formula (A) is all methyl groups), polymerization initiator (trade name “Irgacure 127” Manufactured by BASF AG, a photopolymerization initiator, a fluorine-based surfactant (trade name "W-AHE” made by Fuji Film Co., Ltd.), and isopropanol in the following proportions to be treated: A composition for forming a plating layer 1 (hereinafter, also simply referred to as “composition 1”) was obtained.
- composition of Composition 1 ⁇ 1.35 mass% of polyacrylic acid Tetrafunctional acrylamide 0.9% by mass Polymerization initiator 0.045% by mass 0.015% by mass of a fluorine-based surfactant Isopropanol 97.69% by mass ⁇
- the absorbance of the substrate before and after dyeing was measured, it was found that the difference in absorbance at a wavelength of 525 nm before and after dyeing was 0.03 or less, and the alkali resistance of the obtained substrate was excellent.
- a spectrophotometer V-670 (trade name, manufactured by JASCO Corporation) was used to measure the absorbance.
- the composition 1 is applied onto the primer layer using a bar coater, a film is formed to have a thickness of 300 nm, and the film is dried through an oven at 80 ° C. A layer for layer formation was formed.
- the base material base material with a layer for to-be-plated layer formation
- the layer for to-be-plated layer formation was formed.
- the substrate with the layer to be plated layer-forming layer is placed in a vacuum chamber, and a photomask (hard mask) having an opening of a linear thin wire mesh pattern with a width of 1 ⁇ m (thin line width of opening: 1 ⁇ m, The pitch of the openings: 150 ⁇ m, the crossing angle of the fine lines: 90 degrees) and the layer to be plated were closely adhered in a vacuum state.
- Example 1 With a photomask having an opening of a linear thin wire mesh pattern with a width of 1 ⁇ m, a thin line of a pattern-like plating layer with a width of 1.3 ⁇ m could be formed. Thus, the pattern-like to-be-plated layer with high precision was able to be formed. In addition, sticking of the layer to be plated formation was not confirmed on the photomask. (Plating catalyst application process) Then, the pattern-like to-be-plated layer was washed with water, and immersed for 5 minutes in an alkaline ionized Pd catalyst application solution (Alcup Activator MAT-2-A + MAT-2-B manufactured by Kamimura Kogyo Co., Ltd.).
- Alcup Activator MAT-2-A + MAT-2-B manufactured by Kamimura Kogyo Co., Ltd.
- ion type in the said alkaline ion type Pd catalyst provision liquid shows that Pd exists as a metal ion in a catalyst provision liquid.
- pH of the alkaline ion-based Pd catalyst application solution was 11 when measured with a pH meter F-74 (trade name, manufactured by HORIBA). Then, the pattern-like to-be-plated layer was washed with water, and the pattern-like to-be-plated layer after water washing was immersed in a plating catalyst reduction solution (manufactured by Rohm and Haas Co., Ltd.).
- the pattern-like layer to be plated is washed with water, and then dipped in a copper plating solution (CU-510 manufactured by McDermid, containing ethylenediaminetetraacetic acid) at 30 ° C. to make the plated copper thin line width (line width of metal layer)
- a copper plating solution (CU-510 manufactured by McDermid, containing ethylenediaminetetraacetic acid) at 30 ° C. to make the plated copper thin line width (line width of metal layer)
- the electroless copper plating process was performed so that it might be set to 3.5 um.
- the conductive film of Example 1 in which copper plating was performed on the patterned plating layer (a metal layer was formed) was obtained.
- the metal layer was a mesh-like fine line pattern like the pattern-like to-be-plated layer.
- Example 2 A procedure similar to Example 1 is used except that composition 2 for forming a layer to be plated (hereinafter, also simply referred to as "composition 2") prepared by the following procedure is used instead of composition 1. The conductive film of Example 2 was produced.
- composition 2 for forming a layer to be plated
- Synthesis Example 1 Polymer 1 In a 2 L three-necked flask, 1 L of ethyl acetate and 159 g of 2-aminoethanol were placed and cooled in an ice bath. Thereto, 150 g of 2-bromoisobutyric acid bromide was added dropwise while adjusting to an internal temperature of 20 ° C. or less. Thereafter, the internal temperature was raised to room temperature (25.degree. C.) and allowed to react for 2 hours. After completion of the reaction, 300 mL of distilled water was added to stop the reaction.
- the ethyl acetate phase was washed four times with 300 mL of distilled water and then dried over magnesium sulfate, and then ethyl acetate was distilled off to obtain 80 g of a raw material A.
- 47.4 g of the raw material A, 22 g of pyridine and 150 mL of ethyl acetate were placed in a 500 mL three-necked flask and cooled in an ice bath. Thereto, 25 g of acrylic acid chloride was adjusted to an internal temperature of 20 ° C. or less and dropped. Then, it raised to room temperature and made it react for 3 hours. After completion of the reaction, 300 mL of distilled water was added to stop the reaction.
- Identification of the obtained polymer 1 was carried out using an infrared spectroscopy (IR) measuring device (manufactured by Horiba, Ltd.). The measurement was carried out by dissolving the polymer in acetone and using KBr crystals. As a result of IR measurement, a peak was observed around 2240 cm -1 , and it was found that acrylonitrile, which is a nitrile unit, was introduced into the polymer. In addition, it was found that acrylic acid was introduced as a carboxyl group unit by acid value measurement. In addition, Polymer 1 was dissolved in heavy DMSO (dimethyl sulfoxide), and measurement was performed by Bruker 300 MHz 1 H NMR (nuclear magnetic resonance) (AV-300).
- DMSO dimethyl sulfoxide
- the thickness of the pattern-like to-be-plated layer after exposure-development obtained was 0.8 ⁇ m.
- a photomask the same photomask as in Example 1
- the pattern-like to-be-plated layer with high accuracy was able to be formed.
- sticking of the layer to be plated formation was not confirmed on the photomask.
- the conductive film of Example 2 was produced according to the procedure similar to Example 1 about subsequent processes.
- Example 3 A conductive film of Example 3 was produced according to the same procedure as Example 1 except that the thickness of the layer to be plated was 0.8 ⁇ m instead of 0.3 ⁇ m.
- a thin line of a pattern-like plated layer having a width of 1.5 ⁇ m with a photomask (the same photomask as in Example 1) having an opening of a linear thin line mesh pattern with a width of 1 ⁇ m It was possible.
- the pattern-like to-be-plated layer with high accuracy was able to be formed.
- sticking of the layer to be plated formation was not confirmed on the photomask.
- Example 4 As a support, according to the same procedure as Example 1, except that Toyobo A4300 (trade name, manufactured by Toyobo Co., Ltd., polyester film) was used instead of Lumirror U48, and that no primer layer was formed The conductive film of Example 4 was produced.
- a thin line of a pattern-like plating layer having a width of 1.3 ⁇ m is formed using a photomask (the same photomask as in Example 1) having an opening of a linear thin line mesh pattern with a width of 1 ⁇ m. It was possible.
- the pattern-like to-be-plated layer with high accuracy was able to be formed.
- Comparative Example 1 As the electroless copper plating solution, Sulcup PEA (made by Kamimura Kogyo Co., Ltd., an electroless plating solution of Rochelle salt type, containing neither aminocarboxylic acid nor aminocarboxylic acid salt) is used in place of CU-510 made by McDermid. According to the same procedure as Example 1 except for the above, a conductive film of Comparative Example 1 was produced.
- Sulcup PEA made by Kamimura Kogyo Co., Ltd., an electroless plating solution of Rochelle salt type, containing neither aminocarboxylic acid nor aminocarboxylic acid salt
- a liquid manufactured by Rohm and Haas Co., Ltd.
- Comparative Example 3 The conductive film of Comparative Example 3 is prepared according to the same procedure as in Example 1 except that the aperture thin line width of the photomask is 3 ⁇ m (the thin line pitch and the thin line intersection angle are the same as in Example 1) Made.
- the evaluation criteria for the conduction rate are: “A” for which 8 or more conductions were observed, “B” for 3 to 7 conductions, “C” for 2 or less conductions. ". Evaluation of relative resistance measures the resistivity of each electroconductive film of an Example and a comparative example, sets the resistivity of Example 1 to 1, and calculates relative resistance of each electroconductive film of an Example and a comparative example It went by.
- Table 1 shows the results of the above evaluation tests.
- the amount of adhesion of the Pd catalyst attached to the layer for forming a pattern-like layer was determined by a glow discharge optical emission analyzer (trade name "GD-Profiler2", HORIBA Measurement).
- GD-Profiler2 trade name "HORIBA Measurement”
- the adhesion amount of the Pd catalyst adhered to the pattern-like layer to be plated-forming layer was 50 mg / m 2 or more in all cases.
- the adhesion amount of the Pd catalyst adhering to the layer for pattern-form to-be-plated layer forming was 25 mg / m ⁇ 2 >.
- substrate 14 layer to be plated layer formation 14a exposed region (exposed portion) 14b Unexposed area (unexposed area) 14A Patterned plating layer 20 Plating catalyst layer 22 Detection electrode 24 Extraction wiring 25 Metal layer 30 Conductive laminate 50 Mask 52 Opening
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Abstract
Description
例えば、特許文献1には、「水素添加されていてもよい共役ジエン化合物単位を有するポリマーと、平均粒子径400nm以下の金属酸化物粒子とを含む下地層を形成する下地層形成工程と、めっき触媒またはその前駆体を含みアルカリ性であるめっき触媒液と、上記下地層とを接触させ、上記下地層にめっき触媒またはその前駆体を付与する触媒付与工程と、上記めっき触媒またはその前駆体が付与された上記下地層に対してめっきを行い、上記下地層上に金属層を形成するめっき工程と、を備える積層体の製造方法。」が開示されている(請求項1)。
そこで、本発明者らは、フォトリソグラフィ法によってパターン状に形成されたパターン状被めっき層に対して、特許文献1に記載されているようなアルカリ性のめっき触媒液(めっき触媒付与液)を用いてめっき触媒を付与した後、めっき液を用いて、パターン状被めっき層上に金属層を形成することを試みた。
この場合、パターン状被めっき層に対するめっき触媒の付与量が高くなり、金属層が良好に形成されるため、得られる金属層を低抵抗にできることを知見した。しかしながら、めっき液の種類によっては、パターン状被めっき層以外の領域にも金属層が形成されてしまい、パターン状被めっき層に対応する位置のみに金属層を形成できない場合があることがわかった。
さらに、本発明者らが検討を進めたところ、パターン状被めっき層の線幅によっては、形成される金属層の抵抗が向上することを知見している。
すなわち、本発明者らは、以下の構成により上記課題が解決できることを見出した。
基材と、パターン状被めっき層と、金属層と、を有する導電性積層体の製造方法であって、
重合開始剤と、以下の化合物Xまたは組成物Yと、を含有する被めっき層形成用組成物を用いて、上記基材上に被めっき層形成用層を形成する工程と、
上記被めっき層形成用層に対してパターン状に露光処理を実施し、現像処理を実施して、線幅が3μm未満である部分を含む上記パターン状被めっき層を形成する工程と、
めっき触媒またはその前駆体を含有するアルカリ性のめっき触媒付与液を用いて、上記パターン状被めっき層に上記めっき触媒またはその前駆体を付与する工程と、
アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有するめっき液を用いて、上記めっき触媒またはその前駆体が付与された上記パターン状被めっき層に対してめっき処理を行い、上記パターン状被めっき層上に上記金属層を形成する工程と、
を有する、導電性積層体の製造方法。
化合物X:めっき触媒またはその前駆体と相互作用する官能基、および、重合性基を有する化合物
組成物Y:めっき触媒またはその前駆体と相互作用する官能基を有する化合物、および、重合性基を有する化合物を含む組成物
[2]
上記めっき触媒付与液中において、上記めっき触媒またはその前駆体が金属イオンである、上記[1]に記載の導電性積層体の製造方法。
[3]
上記相互作用する官能基が、イオン性極性基である、上記[1]または[2]に記載の導電性積層体の製造方法。
[4]
上記重合性基が、アクリルアミド基およびメタアクリルアミド基からなる群から選択される、上記[1]~[3]のいずれか1つに記載の導電性積層体の製造方法。
[5]
上記基材を下記染色条件によって染色した際に、染色前後における上記基材の波長525nmにおける吸光度の変化が0.05以内である、上記[1]~[4]のいずれか1つに記載の導電性積層体の製造方法。
染色条件:30℃の0.1M水酸化ナトリウム水溶液に上記基材を5分間浸漬した後、上記基材を取り出して、1質量%のローダミン6G水溶液に上記基材を1分間浸漬する。
[6]
上記導電性積層体がタッチパネルセンサーに用いられる、上記[1]~[5]のいずれか1つに記載の導電性積層体の製造方法。
[7]
基材と、
上記基材上に配置され、線幅が3μm未満である部分を含むパターン状被めっき層と、
を有し、
上記パターン状被めっき層には、めっき触媒またはその前駆体が付着しており、上記パターン状被めっき層における上記めっき触媒またはその前駆体の付着量が50mg/m2以上である、積層体。
[8]
基材と、
上記基材上に配置され、線幅が3μm未満である部分を含むパターン状被めっき層と、
上記パターン状被めっき層上に配置された金属層と、
を有し、
上記パターン状被めっき層には、めっき触媒が付着しており、上記パターン状被めっき層における上記めっき触媒の付着量が50mg/m2以上である、導電性積層体。
なお、本発明において「~」を用いて表される数値範囲は、「~」の前後に記載される数値を下限値および上限値として含む範囲を意味する。
本発明の導電性積層体の製造方法は、基材と、パターン状被めっき層と、金属層と、を有する導電性積層体の製造方法である。
また、本発明の導電性積層体の製造方法は、
重合開始剤と、後述する化合物Xまたは組成物Yと、を含有する被めっき層形成用組成物を用いて、上記基材上に被めっき層形成用層を形成する工程(以下、「被めっき層形成工程」ともいう。)と、
上記被めっき層形成用層に対してパターン状に露光処理を実施し、現像処理を実施して、線幅が3μm未満である部分を含む上記パターン状被めっき層を形成する工程(以下、「パターン状被めっき層形成工程」ともいう。)と、
めっき触媒またはその前駆体を含有するアルカリ性のめっき触媒付与液を用いて、上記パターン状被めっき層に上記めっき触媒またはその前駆体を付与する工程(以下、「めっき触媒付与工程」ともいう。)と、
アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有するめっき液を用いて、上記めっき触媒またはその前駆体が付与された上記パターン状被めっき層に対してめっき処理を行い、上記パターン状被めっき層上に上記金属層を形成する工程(以下、「金属層形成工程」ともいう。)と、を有する。
アルカリ性のめっき触媒付与液を用いると、パターン状被めっき層が良好に膨潤して、めっき触媒付与液の浸透性が向上すると考えられる。これにより、パターン状被めっき層に対するめっき触媒またはその前駆体の付与量が高くなり、低抵抗な金属層を形成できた推測される。
また、上記のようにパターン状被めっき層がアルカリ性のめっき触媒付与液によって処理された場合(すなわち、パターン状被めっき層におけるめっき触媒の付与量が多い場合)、アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有するめっき液を用いると、パターン状被めっき層に対応する位置に金属層を形成できる。
この理由の詳細は明らかになっていないが、以下の理由によるものと推測される。
めっき液として、ロッシェル塩系のめっき液(例えば、上記特許文献1の段落0101に記載の無電解めっき液スルカップPEA(商品名、上村工業社製)など)が用いられることがある。本発明者らが検討したところ、ロッシェル塩系のめっき液でのめっき処理を短時間(めっき析出序盤)で中断した場合、パターン選択性(パターン状被めっき層に対応する位置のみに金属層を形成すること)が向上しないことを知見した。このことから、ロッシェル塩系のめっき液は、析出速度が遅くても、めっき対象物の全面を綺麗に覆うようにめっき液が設計されていると推測される。言い換えると、ロッシェル塩系のめっき液は、付き回り性を追求して設計されている液なので、パターン選択性(パターン状被めっき層に対応する位置に金属層を形成すること)を犠牲にしていると推測される。
これに対して、本発明者らは、アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有する本発明のめっき液を用いると、短時間でめっき処理を中断した場合におけるパターン選択性に優れ、かつ、めっき処理時間を長くした場合においてもパターン選択性が維持できることを見出した。
このような理由から、アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有する本発明のめっき液は、上記ロッシェル塩系のめっき液と比較して、相対的にパターン選択性が高くなったものと推測される。
さらに、本発明者らは、パターン状被めっき層の線幅が所定値を超えると、形成される金属層の抵抗が増大することを知見した。
被めっき層形成用工程は、重合開始剤と、後述する化合物Xまたは組成物Yと、を含有する被めっき層形成用組成物を用いて、上記基材上に被めっき層形成用層を形成する工程である。
図1は、被めっき層形成工程を説明するための概略側面図であり、被めっき層形成用層14が基材12の上(直上)に配置されている状態を示す。
図1の例では、基材12の全面に被めっき層形成用層14が付与されているが、これに限定されず、基材12の表面の一部の領域に被めっき層形成用層14が形成されていてもよい。
基材12の厚み(mm)は特に制限されないが、取り扱い性および薄型化のバランスの点から、0.01~1mmが好ましく、0.02~0.1mmがより好ましい。
また、基材12は、光を適切に透過することが好ましい。具体的には、基材12の全光線透過率は、85~100%であることが好ましい。
基材12は、枚葉(単票)であってもよいし、長尺状(連続体)であってもよい。
基材12は、支持体と、支持体上に配置されたプライマー層とを有していてもよい。支持体としては、上述した基材を構成する材料が挙げられる。
プライマー層は、支持体の最表面(後述するパターン状被めっき層形成用層が形成される面)に位置する。これにより、被めっき層形成用層(パターン状被めっき層)の基材に対する密着性が向上する。
プライマー層の厚みは特に制限されないが、一般的には、0.01~100μmが好ましく、0.05~20μmがより好ましく、0.05~10μmがさらに好ましい。
プライマー層の材料は特に制限されず、基材との密着性が良好な樹脂であることが好ましい。樹脂の具体例としては、例えば、熱硬化性樹脂でも熱可塑性樹脂でもまたそれらの混合物でもよく、例えば、熱硬化性樹脂としては、エポキシ樹脂、フェノール樹脂、ポリイミド樹脂、ポリエステル樹脂、ビスマレイミド樹脂、ポリオレフィン系樹脂、および、イソシアネート系樹脂等が挙げられる。熱可塑性樹脂としては、例えば、フェノキシ樹脂、ポリエーテルスルフォン、ポリスルフォン、ポリフェニレンスルフォン、ポリフェニレンサルファイド、ポリフェニルエーテル、ポリエーテルイミド、および、ABS樹脂(アクリロニトリル-ブタジエン-スチレン共重合体)等が挙げられる。
熱可塑性樹脂と熱硬化性樹脂とは、それぞれ単独で用いてもよいし、2種以上併用してもよい。また、シアノ基を含有する樹脂を使用してもよく、具体的には、ABS樹脂や、特開2010-84196号の段落0039~0063に記載の「側鎖にシアノ基を有するユニットを含むポリマー」を用いてもよい。
また、NBRゴム(アクリロニトリル-ブタジエンゴム)およびSBRゴム(スチレン-ブタジエンゴム)などのゴム成分を用いることもできる。
ウレタン樹脂としては、例えば、ジオール化合物とジイソシアネート化合物との反応生成物が挙げられる。
ジオール化合物としては、例えば、エチレングリコール、プロピレングリコール、1,2-プロパンジオール、1,3-プロパンジオール、1,3-ブタンジオール、1,4-ブタンジオール、ネオペンチルグリコール、1,5-ペンタンジオール、1,6-ヘキサンジオール、3-メチルペンタンジオール、ジエチレングリコール、1,4-シクロヘキサンジメタノール、3-メチル-1,5-ペンタンジオール、2-メチル-1,3-プロパンジオール、2,2-ジエチル-1,3-プロパンジオール、2-ブチル-2-エチル-1,3-プロパンジオール、キシリレングリコール、水添ビスフェノールA、または、ビスフェノールA、ポリアルキレングリコール等のジオール類が挙げられる。また、これらの化合物のアルキレンオキシド付加物(例えば、エチレンオキシド付加物、プロピレンオキシド付加物等)が挙げられる。
これらのなかでも、表面硬度および離形紙との摩擦係数を所定範囲に調整しやすい観点から、ポリアルキレングリコールが好ましく、ポリエチレングリコール、ポリプロピレングリコール、および、ポリテトラメチレングリコールがより好ましい。ポリアルキレングリコールにおけるオキシアルキレンの平均付加モル数は、3~20であることが好ましい。また、ポリアルキレングリコールの重量平均分子量は、100~2000であることが好ましい。
ジオール化合物は、1種を単独で用いてもよく2種以上を混合して用いてもよい。
ジイソシアネート化合物は、1種を単独で用いてもよく2種以上を混合して用いてもよい。
なお、(メタ)アクリレートとは、アクリレートまたはメタクリレートを意味する。また、ジイソシアネート化合物およびジオール化合物としては、上述したものが挙げられ、また好ましい態様も同じである。
ヒドロキシアルキル(メタ)アクリレートは、1種を単独で用いてもよく2種以上を混合して用いてもよい。
反応性希釈モノマーとしては、例えば、イソボルニル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート等の脂環式(メタ)アクリレート;または、フェノキシエチル(メタ)アクリレート等の芳香族系(メタ)アクリレート;が挙げられる。
反応性希釈モノマーとしては、1種を単独で用いてもよく2種以上を混合して用いてもよい。
共役ジエン化合物由来の繰り返し単位の好適態様の1つとしては、ブタジエン骨格を有する化合物が重合反応することで生成する繰り返し単位が挙げられる。
上記共役ジエン化合物単位は水素添加されていてもよく、水素添加された共役ジエン化合物単位を含む場合、金属層の密着性がより向上し好ましい。つまり、共役ジエン化合物由来の繰り返し単位中の二重結合が水素添加されていてもよい。
水素添加されていてもよい共役ジエン化合物単位を有するポリマーには、後述する相互作用性基が含まれていてもよい。
このポリマーの好適な態様としては、アクリロニトリルブタジエンゴム(NBR)、カルボキシル基含有ニトリルゴム(XNBR)、アクリロニトリル-ブタジエン-イソプレンゴム(NBIR)、ABS樹脂、または、これらの水素添加物(例えば、水素添加アクリロニトリルブタジエンゴム)などが挙げられる。
染色条件:30℃の0.1M水酸化ナトリウム水溶液に上記基材を5分間浸漬した後、上記基材を取り出して、1質量%のローダミン6G水溶液に上記基材を1分間浸漬する。
このような性質を持つ基材としては、例えば、水素添加アクリルニトリルブタジエンゴム(H-NBR)およびウレタン樹脂等が挙げられる。
ここで、染色前後の基材の吸光度は、分光光度計V-670(商品名、日本分光社製)に準ずる装置を用いて測定できる。
また、取り扱い性および製造効率の観点からは、被めっき層形成用組成物の付与後に、必要に応じて乾燥処理を行って残存する溶剤を除去してもよい。
なお、乾燥処理の条件は特に制限されないが、生産性がより優れる点で、室温(20℃)~220℃(好ましくは50~120℃)で、1~30分間(好ましくは1~10分間)実施することが好ましい。
上記の被めっき層形成用層の厚みは平均厚みであり、被めっき層形成用層の任意の10点の厚みを測定して、算術平均した値である。
上記被めっき層形成用層は、重合開始剤と、以下の化合物Xまたは組成物Yと、を含有する被めっき層形成用組成物を用いて形成される。以下、被めっき層形成用組成物に含まれる成分および含まれ得る成分について詳述する。
化合物X:めっき触媒またはその前駆体と相互作用する官能基(以後、単に「相互作用性基」とも称する)、および、重合性基を有する化合物
組成物Y:めっき触媒またはその前駆体と相互作用する官能基を有する化合物、および、重合性基を有する化合物を含む組成物
化合物Xは、相互作用性基と重合性基とを有する化合物である。
相互作用性基とは、パターン状被めっき層に付与されるめっき触媒またはその前駆体と相互作用できる官能基を意図し、例えば、めっき触媒またはその前駆体と静電相互作用を形成可能な官能基、または、めっき触媒もしくはその前駆体と配位形成可能な含窒素官能基、含硫黄官能基、含酸素官能基などを使用することができる。
相互作用性基としてより具体的には、アミノ基、アミド基、イミド基、ウレア基、3級のアミノ基、アンモニウム基、アミジノ基、トリアジン環、トリアゾール環、ベンゾトリアゾール基、イミダゾール基、ベンズイミダゾール基、キノリン基、ピリジン基、ピリミジン基、ピラジン基、ナゾリン基、キノキサリン基、プリン基、トリアジン基、ピペリジン基、ピペラジン基、ピロリジン基、ピラゾール基、アニリン基、アルキルアミン構造を含む基、イソシアヌル構造を含む基、ニトロ基、ニトロソ基、アゾ基、ジアゾ基、アジド基、シアノ基、および、シアネート基などの含窒素官能基;エーテル基、水酸基、フェノール性水酸基、カルボキシ基、カーボネート基、カルボニル基、エステル基、N-オキシド構造を含む基、S-オキシド構造を含む基、および、N-ヒドロキシ構造を含む基などの含酸素官能基;チオフェン基、チオール基、チオウレア基、チオシアヌール酸基、ベンズチアゾール基、メルカプトトリアジン基、チオエーテル基、チオキシ基、スルホキシド基、スルホン基、サルファイト基、スルホキシイミン構造を含む基、スルホキシニウム塩構造を含む基、スルホン酸基、および、スルホン酸エステル構造を含む基などの含硫黄官能基;ホスフォート基、ホスフォロアミド基、ホスフィン基、および、リン酸エステル構造を含む基などの含リン官能基;塩素、および、臭素などのハロゲン原子を含む基などが挙げられ、塩構造をとりうる官能基においてはそれらの塩も使用することができる。
なかでも、カルボキシ基、スルホン酸基、リン酸基、およびボロン酸基などのイオン性極性基、エーテル基、またはシアノ基が好ましく、イオン性極性基がより好ましい。
パターン状被めっき層がイオン性極性基を有していると、アルカリ性のめっき触媒付与液中においてイオン性極性基がイオンとして存在しやすくなる。これにより、パターン状被めっき層が親水化するので、パターン状被めっき層に対するめっき触媒付与液の浸透性がより向上すると推測される。
化合物Xには、相互作用性基が2種以上含まれていてもよい。
ラジカル重合性基としては、例えば、アクリル酸エステル基(アクリロイルオキシ基)、メタクリル酸エステル基(メタクリロイルオキシ基)、イタコン酸エステル基、クロトン酸エステル基、イソクロトン酸エステル基、および、マレイン酸エステル基などの不飽和カルボン酸エステル基、スチリル基、ビニル基、アクリルアミド基、ならびに、メタクリルアミド基などが挙げられる。なかでも、メタクリロイルオキシ基、アクリロイルオキシ基、ビニル基、スチリル基、アクリルアミド基、および、メタクリルアミド基が好ましく、メタクリロイルオキシ基、アクリロイルオキシ基、スチリル基、アクリルアミド基およびメタクリルアミド基がより好ましく、アクリルアミド基およびメタクリルアミド基がさらに好ましい。
化合物X中には、重合性基が2種以上含まれていてもよい。また、化合物X中に含まれる重合性基の数は特に制限されず、1つでも、2つ以上でもよい。
なお、上記重合性基を有する低分子化合物とは、いわゆるモノマー(単量体)に該当する。また、高分子化合物とは、所定の繰り返し単位を有するポリマーであってもよい。
また、化合物としては1種のみを使用してもよいし、2種以上を併用してもよい。
このような重合性基および相互作用性基を有するポリマーの合成方法は特に制限されず、公知の合成方法(特許公開2009-280905号の段落0097~0125参照)が使用される。
本発明における重量平均分子量は、ゲル透過クロマトグラフ(GPC)により測定される。
GPCは、HLC-8220GPC(東ソー社製)を用い、カラムとしてTSKgel G5000PWXL、TSKgel G4000PWXL、TSKgel G2500PWXL(東ソー社製、7.8mmID×30cm)を用い、溶離液として10mM NaNO3水溶液を用いる。また、条件としては、試料濃度を0.1質量%、流速を1.0ml/min(リファレンスは0.5ml/min)、サンプル注入量を100μl、測定温度を40℃とし、RI(示差屈折)検出器を用いて行う。
また、検量線は、TSKstandard POLY(ETHILENE OXIDE):「SE-150」、「SE-30」、「SE-8」、「SE-5」、「SE-2」(東ソー社製)、分子量3000のポリエチレングリコールおよび分子量282のヘキサエチレングリコールから作製する。
ポリマーの第1の好ましい態様として、下記式(a)で表される重合性基を有する繰り返し単位(以下、適宜重合性基ユニットとも称する)、および、下記式(b)で表される相互作用性基を有する繰り返し単位(以下、適宜相互作用性基ユニットとも称する)を含む共重合体が挙げられる。
なお、R1としては、水素原子、メチル基、または、臭素原子で置換されたメチル基が好ましい。R2としては、水素原子、メチル基、または、臭素原子で置換されたメチル基が好ましい。R3としては、水素原子が好ましい。R4としては、水素原子が好ましい。R5としては、水素原子、メチル基、または、臭素原子で置換されたメチル基が好ましい。
L1としては、ポリマーの合成が容易で、金属層の密着性がより優れる点で、脂肪族炭化水素基、または、ウレタン結合もしくはウレア結合を有する2価の有機基(例えば、脂肪族炭化水素基)が好ましく、なかでも、総炭素数1~9であるものが好ましい。なお、ここで、L1の総炭素数とは、L1で表される置換または無置換の2価の有機基に含まれる総炭素原子数を意味する。
また、上記相互作用性基ユニットの含有量は、めっき触媒またはその前駆体に対する吸着性の観点から、ポリマー中の全繰り返し単位に対して、5~95モル%が好ましく、10~95モル%がより好ましい。
ポリマーの第2の好ましい態様としては、下記式(A)、式(B)、および式(C)で表される繰り返し単位を含む共重合体が挙げられる。
式(B)で表される繰り返し単位中のR5、XおよびL2は、上記式(b)で表される繰り返し単位中のR5、XおよびL2と同じであり、各基の説明も同じである。
式(B)中のWaは、後述するVで表される親水性基またはその前駆体基を除く、めっき触媒またはその前駆体と相互作用する基を表す。なかでも、シアノ基、エーテル基が好ましい。
式(C)中、Uは、単結合、または、置換もしくは無置換の2価の有機基を表す。2価の有機基の定義は、上述したX、YおよびZで表される2価の有機基と同義である。Uとしては、ポリマーの合成が容易で、金属層の密着性がより優れる点で、単結合、エステル基(-COO-)、アミド基(-CONH-)、エーテル基(-O-)、または置換もしくは無置換の2価の芳香族炭化水素基が好ましい。
式(C)中、L3は、単結合、または、置換もしくは無置換の2価の有機基を表す。2価の有機基の定義は、上述したL1およびL2で表される2価の有機基と同義である。L3としては、ポリマーの合成が容易で、金属層の密着性がより優れる点で、単結合、または、2価の脂肪族炭化水素基、2価の芳香族炭化水素基、またはこれらを組み合わせた基であることが好ましい
親水性基としては、めっき触媒またはその前駆体との相互作用の点で、イオン性極性基であることが好ましい。イオン性極性基としては、具体的には、カルボキシ基、スルホン酸基、リン酸基、および、ボロン酸基が挙げられる。なかでも、適度な酸性(他の官能基を分解しない)という点から、カルボキシ基が好ましい。
式(A)で表される繰り返し単位の含有量は、反応性(硬化性、重合性)および合成の際のゲル化の抑制の点から、ポリマー中の全繰り返し単位に対して、5~50モル%が好ましく、5~30モル%がより好ましい。
式(B)で表される繰り返し単位の含有量は、めっき触媒またはその前駆体に対する吸着性の観点から、ポリマー中の全繰り返し単位に対して、5~75モル%が好ましく、10~70モル%がより好ましい。
式(C)で表される繰り返し単位の含有量は、水溶液による現像性と耐湿密着性の点から、ポリマー中の全繰り返し単位に対して、10~70モル%が好ましく、20~60モル%がより好ましく、30~50モル%がさらに好ましい。
このポリマーは、公知の方法(例えば、上記で列挙された文献中の方法)により製造することができる。
上記化合物がいわゆるモノマーである場合、好適態様の一つとして式(X)で表される化合物が挙げられる。
置換または無置換の脂肪族炭化水素基としては、メチレン基、エチレン基、プロピレン基、もしくはブチレン基、または、これらの基が、メトキシ基、塩素原子、臭素原子、もしくはフッ素原子等で置換されたものが好ましい。
置換または無置換の芳香族炭化水素基としては、無置換のフェニレン基、または、メトキシ基、塩素原子、臭素原子、もしくはフッ素原子等で置換されたフェニレン基が好ましい。
式(X)中、L10の好適態様の一つとしては、-NH-脂肪族炭化水素基-、または、-CO-脂肪族炭化水素基-が挙げられる。
式(X)中、Wの好適態様としては、イオン性極性基が挙げられ、カルボキシ基がより好ましい。
第四級アンモニウムカチオンとしては、例えば、テトラメチルアンモニウムイオン、および、テトラブチルアンモニウムイオンなどが挙げられる。
なかでも、めっき触媒またはその前駆体の付着、および、パターニング後の金属残渣の点から、水素原子であることが好ましい。
nは、1または2の整数を表す。なかでも、化合物の入手性の観点から、nは1であることが好ましい。
L11は、エステル基(-COO-)、アミド基(-CONH-)、またはフェニレン基を表す。なかでも、L11がアミド基であると、耐溶剤性(例えば、アルカリ溶剤耐性)が向上する。
L12は、単結合、2価の脂肪族炭化水素基(好ましくは炭素数1~8、より好ましくは炭素数3~5)、または、2価の芳香族炭化水素基を表す。脂肪族炭化水素基は、直鎖状、分岐状、環状であってもよい。なお、L12が単結合の場合、L11はフェニレン基を表す。
組成物Yは、相互作用性基を有する化合物、および、重合性基を有する化合物を含む組成物である。つまり、被めっき層形成用層が、相互作用性基を有する化合物、および、重合性基を有する化合物の2種を含む。相互作用性基および重合性基の定義は、上述の通りである。
相互作用性基を有する化合物とは、相互作用性基を有する化合物である。相互作用性基の定義は上述の通りである。このような化合物としては、低分子化合物であっても、高分子化合物であってもよい。相互作用性基を有する化合物の好適態様としては、上述した式(b)で表される繰り返し単位を有する高分子(例えば、ポリアクリル酸)が挙げられる。なお、相互作用性基を有する化合物には、重合性基は含まれない。
重合性基を有する化合物とは、いわゆるモノマーであり、形成されるパターン状被めっき層の硬度がより優れる点で、2個以上の重合性基を有する多官能モノマーであることが好ましい。多官能モノマーとは、具体的には、2~6個の重合性基を有するモノマーを使用することが好ましい。反応性に影響を与える架橋反応中の分子の運動性の観点から、用いる多官能モノマーの分子量としては150~1000が好ましく、さらに好ましくは200~800である。また、複数存在する重合性基同士の間隔(距離)としては原子数で1~15であることが好ましい。
重合性基を有する化合物には、相互作用性基が含まれていてもよい。
Lは、単結合、または、2価の有機基を表す。2価の有機基の定義は、上記の通りである。
Qは、n価の有機基を表す。n価の有機基としては、下記式(1A)で表される基、下記式(1B)で表される基、
nは、2以上の整数を表し、2~6が好ましい。
多官能(メタ)アクリルアミドとしては、(メタ)アクリルアミド基を2以上(好ましくは、2以上6以下)有するものであれば特に限定されない。
多官能(メタ)アクリルアミドの中でも、被めっき層形成用層の硬化速度に優れる観点などから、下記一般式(A)で表される4官能(メタ)アクリルアミドをより好ましく用いることができる。
なお、本発明において、(メタ)アクリルアミドとは、アクリルアミドおよびメタクリルアミドの両方を含む概念である。
上記一般式(A)で表される4官能(メタ)アクリルアミドは、例えば、特許第5486536号公報に記載の製造方法によって製造できる。
被めっき層形成用組成物は、重合開始剤を含有する。重合開始剤が含まれることにより、露光処理の際の重合性基間の反応がより効率的に進行する。
重合開始剤としては特に制限はなく、公知の重合開始剤(いわゆる光重合開始剤)などを用いることができる。重合開始剤の例としては、ベンゾフェノン類、アセトフェノン類、α-アミノアルキルフェノン類、ベンゾイン類、ケトン類、チオキサントン類、ベンジル類、ベンジルケタール類、オキスムエステル類、アンソロン類、テトラメチルチウラムモノサルファイド類、ビスアシルフォスフィノキサイド類、アシルフォスフィンオキサイド類、アントラキノン類、アゾ化合物およびその誘導体などを挙げることができる。
重合開始剤の含有量は特に制限されないが、被めっき層の硬化性の点で、被めっき層形成用組成物中の重合性基を有する化合物100質量%に対して、0.1~20質量%であることが好ましく、0.5~10質量%であることがより好ましい。
本発明の被めっき層形成用組成物は、界面活性剤を含有することが好ましい。これにより、被めっき層形成用層に含まれる界面活性剤の作用により、露光処理後のマスクの除去が容易に行われ、被めっき層形成用層の一部がマスクに付着することも抑制できる。また、マスクの汚染も抑制できるので、マスクの洗浄回数を減らしたり無くしたりできるというプロセス上の利点もある。
特に、有機溶媒を含有する場合には、上記の界面活性剤のうちシリコーン系界面活性剤およびフッ素系界面活性剤の機能が一層発揮されるという点から、イソプロパノール、および、プロピレングリコール-1-モノメチルエーテル-2-アセタートなどの親水性溶媒であることが好ましい。
パターン状被めっき層形成工程は、上記被めっき層形成用層に対してパターン状に露光処理を実施し、現像処理を実施して、線幅が3μm未満である部分を含む上記パターン状被めっき層を形成する工程である。
露光処理方法としては、特に制限されず、例えば、マスクを介して露光光を被めっき層形成用層に照射する方法が挙げられる。
被めっき層形成用層とマスクとを真空下で密着させる方法としては、例えば、公知の真空機構(例えばロータリーポンプなどの真空ポンプ)を有する装置を用いて行うことができる。
ここで、真空とは、標準大気圧より圧力が低い状態を表す負圧を含む概念である。具体的には、真空時の圧力としては、200Pa以下であることが好ましく、150Pa以下であることがより好ましく、0.01~100Paであることがさらに好ましい。
露光処理に用いられる光照射機構としては、形成される被めっき層形成用層のパターン精度がより向上するという点から、平行光露光機を用いることが好ましい。
露光処理において照射する光の波長としては、より微細なパターンが形成できるという観点から、300nm以下であることが好ましく、200~270nmであることがより好ましい。
露光時間としては、被めっき層形成用層の材料の反応性および光源により異なるが、通常、10秒~5時間の間である。露光エネルギーとしては、10~8000mJ程度であればよく、好ましくは50~3000mJの範囲である。
図3は、上記露光処理後であって後述する現像処理前に、マスク50を取り除く様子を示す概略側面図である。図3の例では、マスク50を除去するタイミングとして、後述する現像処理前に行う場合を示したが、これに限定されず、現像処理と同時に行ってもよいし、現像処理の後に行ってもよい。
現像処理は、上記露光処理の後に行われる。これにより、パターン状被めっき層が形成される。
現像処理の方法としては特に制限されないが、露光処理後の被めっき層形成用層を現像液(アルカリ性溶液や有機溶剤など)で浸漬させる方法、および、現像液を被めっき層形成用層の表面に塗布する方法等が挙げられるが、浸漬する方法が好ましい。
浸漬する方法の場合、浸漬時間としては生産性および作業性などの観点から、1分から30分程度が好ましい。
上記のようにして得られたパターン状被めっき層は、線幅が3μm未満である部分を含み、1μm以上3μm未満である部分を含むことが好ましい。
パターン状被めっき層は、透明性や視認性(金属配線が視認されないこと)が求められる領域では線幅が狭いことが好ましく、そのような領域においては線幅が1μm以上3μm未満であることがより好ましい。
上記パターン状被めっき層の線幅とは、パターン状被めっき層上に形成される金属層が配線パターン(後述する引出配線など)である場合において、配線パターンを平面視した際に、配線が延びる方向と直交する方向における、パターン状被めっき層の幅を指す。
本発明において、パターン状被めっき層の接触角は、水との接触角を意味し、測定方法として接線法を用いて測定される。
めっき触媒付与工程は、めっき触媒またはその前駆体を含有するアルカリ性のめっき触媒付与液を用いて、上記パターン状被めっき層に上記めっき触媒またはその前駆体を付与する工程である。
本工程を実施することにより、図5に示すように、パターン状被めっき層14A上にめっき触媒またはその前駆体層(以下、単に「めっき触媒層」ともいう。)20が形成される。
なお、図5の例では、めっき触媒層20がパターン状被めっき層14Aの上面のみに形成された場合を示したが、これに限定されず、パターン状被めっき層14Aの上面および側面(すなわち、パターン状被めっき層14Aの表面全体)に形成されていてもよい。
めっき触媒またはその前駆体は、めっき処理の触媒や電極として機能するものである。そのため、使用されるめっき触媒またはその前駆体の種類は、めっき処理の種類により適宜決定される。
めっき触媒またはその前駆体の付与は、めっき触媒またはその前駆体を含有するアルカリ性のめっき触媒付与液を用いて行われる。これにより、めっき触媒またはその前駆体と、パターン状被めっき層と、が接触する。
めっき触媒またはその前駆体の付与方法としては、例えば、めっき触媒付与液をパターン状被めっき層上に塗布する方法、および、めっき触媒付与液中にパターン状被めっき層が形成された積層体を浸漬する方法などが挙げられる。
めっき触媒付与液と、パターン状被めっき層と、の接触時間としては、30秒~24時間程度であることが好ましく、1分~1時間程度であることがより好ましい。
めっき触媒またはその前駆体は、無電解めっき触媒を好ましく用いることができる。
無電解めっき触媒は、無電解めっき時の活性核となるものであれば、如何なるものも用いることができ、具体的には、自己触媒還元反応の触媒能を有する金属(Niよりイオン化傾向の低い無電解めっきできる金属として知られるもの)などが挙げられる。具体的には、Pd、Ag、Cu、Ni、Pt、Au、および、Coなどが挙げられる。なかでも、触媒能の高さから、Ag、Pd、Pt、Cuが好ましい。
無電解めっき触媒前駆体である金属イオンは、金属塩を用いてパターン状被めっき層に付与することが好ましい。使用される金属塩としては、適切な溶媒に溶解して金属イオンと塩基(陰イオン)とに解離されるものであれば特に制限はなく、M(NO3)n、MCln、M2/n(SO4)、および、M3/n(PO4)(Mは、n価の金属原子を表す)などが挙げられる。金属イオンとしては、上記の金属塩が解離したものを好適に用いることができる。例えば、Agイオン、Cuイオン、Niイオン、Coイオン、Ptイオン、および、Pdイオンが挙げられる。なかでも、多座配位可能なものが好ましく、特に、配位可能な官能基の種類数および触媒能の点で、Agイオン、Pdイオン、および、Cuイオンが好ましい。
めっき触媒付与液は、溶剤を含有することが好ましい。溶剤としては、上記めっき触媒またはその前駆体を分散または溶解させることができるものであれば特に限定されず、例えば、水および/または有機溶剤を好ましく用いることができる。
有機溶剤としては、パターン状被めっき層に浸透しうる溶剤が好ましく、例えば、アセトン、アセト酢酸メチル、アセト酢酸エチル、エチレングリコールジアセテート、シクロヘキサノン、アセチルアセトン、アセトフェノン、2-(1-シクロヘキセニル)シクロヘキサノン、プロピレングリコールジアセテート、トリアセチン、ジエチレングリコールジアセテート、ジオキサン、N-メチルピロリドン、ジメチルカーボネート、および、ジメチルセロソルブなどを用いることができる。
めっき触媒付与液は、例えば、水酸化ナトリウムおよび水酸化カリウムなどのpH調整剤を用いることで、所望のpHに調整することが容易となる。
本発明におけるpHは、めっき触媒付与液の温度を25℃として、pHメーターF-74(商品名、HORIBA社製)に準じた装置を用いて測定される。
金属層形成工程は、アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有するめっき液を用いて、上記めっき触媒またはその前駆体が付与された上記パターン状被めっき層に対してめっき処理を行い、上記パターン状被めっき層上に上記金属層を形成する工程である。
本工程を実施することにより、図6に示すように、パターン状被めっき層14A上に金属層25が形成される。このように、金属層25は、めっき触媒層20に対応する位置に形成される。そのため、めっき触媒層20がパターン状被めっき層14Aの上面および側面(すなわち、パターン状被めっき層14Aの表面全体)に形成された場合には、金属層25は、パターン状被めっき層14Aの表面全体に形成されることとなる。
なお、本明細書においては、いわゆる銀鏡反応は、上記無電解めっき処理の一種として含まれる。よって、例えば、銀鏡反応などによって、付着させた金属イオンを還元させて、所望の金属層を形成してもよく、さらにその後電解めっき処理を実施してもよい。
以下、無電解めっき処理、および、電解めっき処理の手順について詳述する。
本工程における無電解めっきは、例えば、無電解めっき触媒が付与されたパターン状被めっき層を備える積層体を、水洗して余分な無電解めっき触媒(金属)を除去した後、無電解めっき浴(後述するめっき液)に浸漬して行うことが好ましい。使用される無電解めっき浴としては、公知の無電解めっき浴を使用することができる。無電解めっき浴への浸漬時間としては、1分~6時間程度であることが好ましく、1分~3時間程度であることがより好ましい。また、無電解めっき浴の温度としては、25~70℃が好ましい。
また、無電解めっき触媒前駆体が付与されたパターン状被めっき層を備える基材を、無電解めっき触媒前駆体がパターン状被めっき層に吸着または含浸した状態で無電解めっき浴に浸漬する場合には、積層体を水洗して余分な無電解めっき触媒前駆体(金属塩など)を除去した後、無電解めっき浴中へ浸漬させることが好ましい。この場合には、無電解めっき浴中において、無電解めっき触媒前駆体の還元とこれに引き続き無電解めっきが行われる。ここで使用される無電解めっき浴としても、上記同様、公知の無電解めっき浴を使用することができる。
なお、無電解めっき触媒前駆体の還元は、上記のような無電解めっき浴を用いる態様とは別に、触媒活性化液(還元液)を準備し、無電解めっき前の別工程として行うことも可能である。
本発明の導電性積層体の製造方法における金属層形成工程で用いられるめっき液は、アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有し、さらに、めっき用の金属イオンおよび溶剤を含有することが好ましい。
めっき液は、アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有する。ここで、アミノカルボン酸とは、アミノ基とカルボキシ基とを有する化合物を指す。なお、アミノ基としては、1級アミノ基、2級アミノ基、および、3級アミノ基のいずれかであればよい。
アミノカルボン酸およびアミノカルボン酸塩としては、例えば、グリシン、エチレンジアミン四酢酸、ヒドロキシエチルエチレンジアミン三酢酸、ジエチレントリアミン五酢酸、トリエチレンテトラミン六酢酸、ニトリロ三酢酸、ヒドロキシエチルイミノ二酢酸、L-アスパラギン酸-N,N-二酢酸およびヒドロキシイミノジコハク酸、ならびに、これらの塩などが挙げられる。
アミノカルボン酸およびアミノカルボン酸塩は、1種単独で使用してもよいし、2種以上を併用してもよい。
アミノカルボン酸およびアミノカルボン酸塩の含有量は、めっき液の全質量100質量%に対して、0.5~5質量%が好ましく、1.5~3質量%がより好ましい。
めっき液は、めっき用の金属イオンを含有することが好ましい。めっき用の金属イオンは、めっき液に金属を添加することで、めっき液中でイオンとして存在する。
めっき液に添加される金属は、例えば、銅、すず、鉛、ニッケル、金、銀、パラジウム、および、ロジウムが挙げられ、なかでも、導電性の観点からは、銅、銀および金が好ましく、銅がより好ましい。
めっき液中のめっき用の金属イオンの濃度は、特に制限されないが、0.1~5質量%が好ましく、0.5~1.5質量%がより好ましい。
めっき液は、溶剤を含有することが好ましい。溶剤としては、水および有機溶剤が挙げられる。
有機溶剤としては、水に可溶な溶剤であることが好ましく、具体的には、アセトンなどのケトン類、ならびに、メタノール、エタノールおよびイソプロパノールなどのアルコール類が好ましく用いられる。
溶剤は、1種単独で使用してもよいし、2種以上を併用してもよい。
めっき液は、上記成分の他に、還元剤、および、金属イオンの安定性を向上させる添加剤(安定剤)などの公知の添加剤を含有してもよい。
なお、上述したように、本工程においては、上記無電解めっき処理の後に、必要に応じて、電気めっき処理を行うことができる。このような態様では、形成される金属層の厚みを適宜調整可能である。
電気めっきの方法としては、従来公知の方法を用いることができる。なお、電気めっきに用いられる金属としては、銅、クロム、鉛、ニッケル、金、銀、すず、および亜鉛などが挙げられ、導電性の観点から、銅、金および銀が好ましく、銅がより好ましい。
本発明においては、上述した方法により得られたパターン状被めっき層上に金属層が形成されるため、低抵抗かつ微細な金属パターンを所望の位置に形成することができる。具体的には、金属層の線幅は、0.1~10μmが好ましく、0.5~5μmがより好ましい。
ここで、金属層の線幅とは、例えば、パターン状被めっき層上に形成される金属層が配線パターン(後述する引出配線など)である場合において、配線パターンを平面視した際に、配線が延びる方向に直交する方向における、配線の幅を指す。
金属層の線幅は、めっき処理の時間、めっき液中の金属イオンの濃度、および、めっき液の温度などにより制御できる。
本発明の導電性積層体の製造方法により得られた導電性積層体は、種々の用途に適用でき、タッチパネル(または、タッチパネルセンサー)、半導体チップ、各種電気配線板、FPC(Flexible printed circuits)、COF(Chip on Film)、TAB(Tape Automated Bonding)、アンテナ、多層配線基板、および、マザーボード等の種々の用途に適用することができる。なかでも、タッチパネルセンサー(静電容量式タッチパネルセンサー)に用いることが好ましい。上記導電性積層体をタッチパネルセンサーに適用する場合、導電性積層体中の金属層がタッチパネルセンサー中の検出電極または引き出し配線として機能する。
なお、本明細書においては、タッチパネルセンサーと、各種表示装置(例えば、液晶表示装置および有機EL(Electro Luminescence)表示装置)を組み合わせたものを、タッチパネルと呼ぶ。タッチパネルとしては、いわゆる静電容量式タッチパネルが好ましく挙げられる。
図7に示すように、導電性積層体30においては、基材12上に配置されたパターン状被めっき層14Aと、パターン状被めっき層14A上に配置された検出電極22および引き出し配線24とを有する。なお、検出電極22および引き出し配線24は、上述した金属層で構成されている。
このような導電性積層体30を製造するためには、検出電極22および引き出し配線24を配置させたい位置にパターン状被めっき層14Aを形成し、これらの上に金属層を形成することにより得られる。つまり、検出電極22および引き出し配線24と、基材12との間には、パターン状被めっき層14Aが配置されている。
検出電極22は、タッチパネルセンサーの入力領域に接近した操作者の指のX方向における入力位置の検出を行う役割を有するものであり、指との間に静電容量を発生する機能を有している。検出電極22は、第1方向(X方向)に延び、第1方向と直交する第2方向(Y方向)に所定の間隔をあけて配列された電極である。
引き出し配線24は、検出電極22に電圧を印加するための役割を担う部材である。
本発明の積層体は、基材と、上記基材上に配置され、線幅が3μm未満である部分を含むパターン状被めっき層と、を有し、上記パターン状被めっき層には、めっき触媒またはその前駆体が付着しており、上記パターン状被めっき層における上記めっき触媒またはその前駆体の付着量が50mg/m2以上である。
本発明の積層体は、上述した導電性積層体の製造方法のうち、被めっき層形成工程、パターン状被めっき層形成工程、めっき触媒付与工程の順に行うことにより得られる。すなわち、本発明の積層体は、上述した導電性積層体の製造方法のうち、金属層形成工程を行わないで製造される。本発明の積層体を用いると、パターン状被めっき層に対応する位置に低抵抗な金属層を形成できる。
本発明の積層体に含まれる、基材、パターン状被めっき層、めっき触媒またはその前駆体の詳細については、上記導電性積層体の製造方法で説明した通りであるので、その説明を省略する。
本発明の積層体において、めっき触媒またはその前駆体の付着量は、50mg/m2以上であり、50~1000mg/m2であることが好ましい。
本発明において、めっき触媒またはその前駆体の付着量は、グロー放電発光分析装置(GD-OES)を用いて測定される。具体的には、めっき触媒またはその前駆体が付着したパターン状被めっき層に対して、グロー放電発光分析装置を用いて深さ方向におけるめっき触媒またはその前駆体由来のシグナルのカウントを積算した値を、測定に用いたパターン状被めっき層の測定領域の面積で除することで算出される。
本発明の導電性積層体は、基材と、上記基材上に配置され、線幅が3μm未満である部分を含むパターン状被めっき層と、上記パターン状被めっき層上に配置された金属層と、を有し、上記パターン状被めっき層には、めっき触媒が付着しており、上記パターン状被めっき層における上記めっき触媒の付着量が50mg/m2以上である。
本発明の導電性積層体は、上述した導電性積層体の製造方法を用いて得られる。したがって、本発明の積層体を用いると、パターン状被めっき層に対応する位置に低抵抗な金属層を形成できる。
本発明の導電性積層体に含まれる、基材、パターン状被めっき層、めっき触媒、および、金属層の詳細については、上記導電性積層体の製造方法で説明した通りであるので、その説明を省略する。
本発明の導電性積層体において、めっき触媒の付着量は、50mg/m2以上であり、50~1000mg/m2であることが好ましい。
めっき触媒またはその前駆体の付着量の測定方法は上述した通りである。
実施例1の導電性積層体(導電性フィルム)は、以下のようにして作製した。なお、実施例1の導電性フィルムの作製にあたって、以下のようにして調製したプライマー層形成用組成物および被めっき層形成用組成物1を用いた。
水素化ニトリルブタジエンゴム(商品名「Zetpole0020」、日本ゼオン製)100gをシクロペンタノン(東京化成工業社製)900gに溶解させた液をプライマー層形成用組成物とした。
ポリアクリル酸(和光純薬工業社製、重量平均分子量80000~150000)、4官能アクリルアミド(下記式(A)における「R」が全てメチル基である化合物)、重合開始剤(商品名「Irgacure127」、BASF社製、光重合開始剤)、フッ素系界面活性剤(商品名「W-AHE」富士フイルム(株)製)、および、イソプロパノールを、下記の割合になるように調液して、被めっき層形成用組成物1(以下、単に「組成物1」ともいう。)を得た。
(組成物1の組成)
―――――――――――――――――――――――――――――――
ポリアクリル酸 1.35質量%
4官能アクリルアミド 0.9質量%
重合開始剤 0.045質量%
フッ素系界面活性剤 0.015質量%
イソプロパノール 97.69質量%
―――――――――――――――――――――――――――――――
(基材の準備)
支持体(商品名「ルミラーU48」、ポリエチレンテレフタレートフィルム、長尺フィルム、東レ(株)製)上に、バーコーターを用いて上記プライマー層形成用組成物を塗布して、600nmの膜厚となるように成膜して、120℃のオーブンを通して乾燥させることで、支持体上にプライマー層が形成された基材を得た。
なお、得られた基材を以下の条件にて染色したところ、目視にて染色が認められなかった。具体的に染色前後の基材の吸光度を測定したところ、染色前後における波長525nmにおける吸光度差が0.03以下であり、得られた基材の耐アルカリ性が優れていることがわかった。なお、吸光度の測定には、分光光度計V-670(商品名、日本分光社製)を用いた。
(被めっき層形成工程)
続いて、バーコーターを用いて上記組成物1をプライマー層上に塗布して、300nmの膜厚となるように成膜して、80℃のオーブンを通して乾燥させることで、基材上に被めっき層形成用層を形成した。このようにして被めっき層形成用層が形成された基材(被めっき層形成用層付き基材)を作製した。
(パターン状被めっき層形成工程)
その後、上記被めっき層形成用層付き基材を真空チャンバー内に載置し、幅1μmの線状の細線メッシュパターンの開口部を有するフォトマスク(ハードマスク)(開口部の細線幅:1μm、開口部のピッチ:150μm、細線の交差角度:90度)と被めっき層形成用層とを真空状態で密着させた。続いて、真空状態のまま、平行光露光機を用いて254nmの波長の光を被めっき層形成用層に照射量7200mJ/cm2で照射した。その後、50℃の温水を用いて現像を行って、被めっき層形成用層の未露光部を除去して、露光部分からなるパターン状被めっき層を形成した。このようにして得られた露光-現像後のパターン状被めっき層の厚みは0.3μmであった。
実施例1においては、幅1μmの線状の細線メッシュパターンの開口部を有するフォトマスクで、幅1.3μmのパターン状被めっき層の細線を形成することができた。このように、精度の高いパターン状被めっき層を形成することができた。加えて、フォトマスクに被めっき層形成用層の貼りつきは確認されなかった。
(めっき触媒付与工程)
その後、パターン状被めっき層を水洗し、アルカリ性のイオン系Pd触媒付与液(上村工業社製アルカップアクチベーターMAT-2-A + MAT-2-B)に5分間浸漬させた。なお、上記アルカリ性のイオン系Pd触媒付与液における「イオン系」とは、Pdが触媒付与液中で金属イオンとして存在していることを示す。また、上記アルカリ性のイオン系Pd触媒付与液のpHをpHメーターF-74(商品名、HORIBA社製)で測定したところ、11であった。
その後、パターン状被めっき層を水洗して、水洗後のパターン状被めっき層をめっき触媒還元液(ロームアンドハース社製)に浸漬させた。
(金属層形成工程)
続いて、パターン状被めっき層を水洗した後、30℃の銅めっき液(マクダーミッド社製CU-510、エチレンジアミン四酢酸を含有する)に浸漬させ、めっき銅細線幅(金属層の線幅)が3.5umとなるように無電解銅めっき処理を行った。
このようにして、パターン状被めっき層上に銅めっきが施された(金属層が形成された)実施例1の導電性フィルムを得た。なお、金属層は、パターン状被めっき層と同様にメッシュ状の細線パターンであった。
組成物1の代わりに、以下の手順により調製された被めっき層形成用組成物2(以下、単に「組成物2」ともいう。)を用いた以外は、実施例1と同様の手順により、実施例2の導電性フィルムを製造した。
2Lの三口フラスコに酢酸エチル1L、および、2-アミノエタノール159gを入れ、氷浴にて冷却した。そこへ、2-ブロモイソ酪酸ブロミド150gを内温20℃以下になるように調節して滴下した。その後、内温を室温(25℃)まで上昇させて2時間反応させた。反応終了後、蒸留水300mLを追加して反応を停止させた。その後、酢酸エチル相を蒸留水300mLで4回洗浄後、硫酸マグネシウムで乾燥し、さらに酢酸エチルを留去することで原料Aを80g得た。
次に、500mLの三口フラスコに、原料A47.4g、ピリジン22g、および、酢酸エチル150mLを入れて氷浴にて冷却した。そこへ、アクリル酸クロライド25gを内温20℃以下になるように調節して滴下した。その後、室温に上げて3時間反応させた。反応終了後、蒸留水300mLを追加し、反応を停止させた。その後、酢酸エチル相を蒸留水300mLで4回洗浄後、硫酸マグネシウムで乾燥し、さらに酢酸エチルを留去した。その後、カラムクロマトグラフィーにて、以下のモノマーM1(20g)を得た。
滴下終了後、さらに反応溶液を3時間撹拌した。その後、N,N-ジメチルアセトアミド41gを追加し、室温まで反応溶液を冷却した。上記の反応溶液に、4-ヒドロキシTEMPO(4-ヒドロキシ-2,2,6,6-テトラメチルピペリジン1-オキシル、東京化成工業社製)0.09g、および、DBU(ジアザビシクロウンデセン)54.8gを加え、室温で12時間反応を行うことにより、反応液を得た。その後、反応液に70質量%メタンスルホン酸水溶液54g加えた。反応終了後、水で再沈を行い、固形物を取り出し、以下のポリマー1(下記式(P1))を12g得た。
また、ポリマー1を重DMSO(ジメチルスルホキシド)に溶解させ、ブルカー製300MHzの1H NMR(nuclear magnetic resonance)(AV-300)にて測定を行った。その結果、ニトリル基含有ユニットに相当するピークが2.5-0.7ppm(5H分)にブロードに観察され、重合性基含有ユニットに相当するピークが7.8-8.1ppm(1H分)、5.8-5.6ppm(1H分)、5.4-5.2ppm(1H分)、4.2-3.9ppm(2H分)、3.3-3.5ppm(2H分)、2.5-0.7ppm(6H分)にブロードに観察され、カルボキシ基含有ユニットに相当するピークが2.5-0.7ppm(3H分)にブロードに観察され、重合性基含有ユニット:ニトリル基含有ユニット:カルボキシ基ユニット=30:30:40(mol%)であることが分かった。
マグネチックスターラーを入れた200mlビーカーに、水:5.142g、プロピレングリコールモノメチルエーテル:67.110g、2-アクリルアミド-2-メチルプロパンスルホン酸:0.153g、ポリマー1:17.034g、ヘキサメチレンビスアクリルアミド:0.279g、IRGACUREOXE127:0.279g(BASF)を加え、調液し、組成物2を得た。
(被めっき層形成工程)
実施例1と同様にして得られた基材のプライマー層上に、バーコーターを用いて上記組成物2を塗布して、0.8μmの膜厚となるように成膜して、80℃のオーブンを通して乾燥させることで、基材上に被めっき層形成用層を形成した。このようにして被めっき層形成用層が形成された基材(被めっき層形成用層付き基材)を作製した。
(パターン状被めっき層形成工程)
続いて、実施例1と同様の手順にて、パターン状被めっき層を形成した。このようにして得られた露光-現像後のパターン状被めっき層の厚みは0.8μmであった。
実施例2においては、幅1μmの線状の細線メッシュパターンの開口部を有するフォトマスク(実施例1と同様のフォトマスク)で、幅1.5μmのパターン状被めっき層の細線を形成することができた。このように、実施例2の製造方法によれば、精度の高いパターン状被めっき層を形成することができた。加えて、フォトマスクに被めっき層形成用層の貼りつきは確認されなかった。
以降の工程については、実施例1と同様の手順にしたがって、実施例2の導電性フィルムを作製した。
被めっき層の膜厚を0.3μmの代わりに0.8μmとした以外は、実施例1と同様の手順に従って、実施例3の導電性フィルムを作製した。
実施例3においては、幅1μmの線状の細線メッシュパターンの開口部を有するフォトマスク(実施例1と同様のフォトマスク)で、幅1.5μmのパターン状被めっき層の細線を形成することができた。このように、実施例3の製造方法によれば、精度の高いパターン状被めっき層を形成することができた。加えて、フォトマスクに被めっき層形成用層の貼りつきは確認されなかった。
支持体として、ルミラーU48の代わりに東洋紡A4300(商品名、東洋紡社製、ポリエステルフィルム)を用いたこと、および、プライマー層を成膜しなかったこと以外は、実施例1と同様の手順に従って、実施例4の導電性フィルムを作製した。
実施例4においては、幅1μmの線状の細線メッシュパターンの開口部を有するフォトマスク(実施例1と同様のフォトマスク)で、幅1.3μmのパターン状被めっき層の細線を形成することができた。このように、実施例4の製造方法によれば、精度の高いパターン状被めっき層を形成することができた。加えて、フォトマスクに被めっき層形成用層の貼りつきは確認されなかった。
なお、上述した条件で、基材(東洋紡A4300)の染色を行ったところ、目視にて僅かに基材の染色が認められた。具体的に染色前後の基材(東洋紡A4300)の吸光度を測定したところ、染色前後における波長525nmにおける吸光度差が0.05であった。なお、吸光度の測定には、分光光度計V-670(商品名、日本分光社製)を用いた。
無電解銅めっき液として、マクダーミッド社製CU-510の代わりにスルカップPEA(上村工業社製。ロッシェル塩系の無電解めっき液。アミノカルボン酸およびアミノカルボン酸塩のいずれも含有しない。)を用いること以外は実施例1と同様の手順に従って、比較例1の導電性フィルムを作製した。
めっき触媒付与工程において、アルカリ性のイオン系Pd触媒付与液(上村工業社製アルカップアクチベーターMAT-2-A + MAT-2-B)の代わりに酸性(pH=4)のイオン系Pd触媒付与液(ロームアンドハース社製)を用いた以外は、実施例1と同様の手順に従って、比較例2の導電性フィルムを作製した。
フォトマスクの開口細線幅を1μmの代わりに3μm(細線のピッチおよび細線の交差角度は実施例1と同様)にすること以外は実施例1と同様の手順に従って、比較例3の導電性フィルムを作製した。
〔パターン形成状態〕
光学顕微鏡(商品名「MX80」、オリンパス社製)を用いて観察して、実施例および比較例の各導電性フィルムの表面を観察し、以下の基準によりパターン形成状態の評価を行った。
A:パターン状被めっき層に対応する位置に金属層が形成されており、金属層を構成する隣接する配線パターン同士が繋がっていない。
B:パターン状被めっき層に対応する位置に金属層が形成されており、金属層を構成する隣接する配線パターン同士が繋がっていないものの、パターン交差部が肥大化している。
C:パターン状被めっき層に対応する位置を中心に金属層が形成されており、金属層を構成する隣接する配線パターンが繋がっている部分が見られる。
実施例および比較例の導電性フィルムにおいて、メッシュ状のパターン状被めっき層上に形成された金属層(すなわち、メッシュ状の配線パターン)の縦3mm×横10mmの領域をメッシュ領域とした。また、メッシュ領域内の横方向における両端の3mm四方の部分を、パッド領域とした。
そして、パッド領域にテスターを接触させて、導通率および抵抗率を測定した。
導通率の評価は、実施例および比較例の導電性フィルム毎に10回行い、導通が認められた回数をカウントすることで行った。導通率の評価基準は、8回以上の導通が認められたものを「A」、3~7回の導通が認められたものを「B」、導通が2回以下であったものを「C」とした。
相対抵抗の評価は、実施例および比較例の各導電性フィルムの抵抗率を測定した後、実施例1の抵抗率を1として、実施例および比較例の各導電性フィルムの相対抵抗を算出することにより行った。
以上の評価試験の結果を第1表に示す。
一方、比較例1の評価結果から、アミノカルボン酸およびアミノカルボン酸塩を含有しないめっき液を用いると、金属が異常析出してしまい、パターン状被めっき層に対応する位置以外にも金属層が形成されることがわかった。なお、金属が異常析出したため、導通率および相対抵抗の評価を実施しなかった。
また、比較例2の評価結果から、酸性のめっき触媒付与液を用いると、金属層の抵抗が高くなりすぎてしまうことが示された。
また、比較例3の評価結果から、線幅が3μm以上のパターン状被めっき層を形成すると、導通率が劣ること(すなわち、抵抗が高いこと)がわかった。なお、相対抵抗の評価を実施しなかった。
その結果、実施例1~4において、パターン状被めっき層形成用層に付着したPd触媒の付着量は、いずれも50mg/m2以上であった。
また、比較例2については、パターン状被めっき層形成用層に付着したPd触媒の付着量は、25mg/m2であった。
14 被めっき層形成用層
14a 露光領域(露光部分)
14b 未露光領域(未露光部分)
14A パターン状被めっき層
20 めっき触媒層
22 検出電極
24 引き出し配線
25 金属層
30 導電性積層体
50 マスク
52 開口部
Claims (8)
- 基材と、パターン状被めっき層と、金属層と、を有する導電性積層体の製造方法であって、
重合開始剤と、以下の化合物Xまたは組成物Yと、を含有する被めっき層形成用組成物を用いて、前記基材上に被めっき層形成用層を形成する工程と、
前記被めっき層形成用層に対してパターン状に露光処理を実施し、現像処理を実施して、線幅が3μm未満である部分を含む前記パターン状被めっき層を形成する工程と、
めっき触媒またはその前駆体を含有するアルカリ性のめっき触媒付与液を用いて、前記パターン状被めっき層に前記めっき触媒またはその前駆体を付与する工程と、
アミノカルボン酸およびアミノカルボン酸塩の少なくとも一方を含有するめっき液を用いて、前記めっき触媒またはその前駆体が付与された前記パターン状被めっき層に対してめっき処理を行い、前記パターン状被めっき層上に前記金属層を形成する工程と、
を有する、導電性積層体の製造方法。
化合物X:めっき触媒またはその前駆体と相互作用する官能基、および、重合性基を有する化合物
組成物Y:めっき触媒またはその前駆体と相互作用する官能基を有する化合物、および、重合性基を有する化合物を含む組成物 - 前記めっき触媒付与液中において、前記めっき触媒またはその前駆体が金属イオンである、請求項1に記載の導電性積層体の製造方法。
- 前記相互作用する官能基が、イオン性極性基である、請求項1または2に記載の導電性積層体の製造方法。
- 前記重合性基が、アクリルアミド基およびメタアクリルアミド基からなる群から選択される、請求項1~3のいずれか1項に記載の導電性積層体の製造方法。
- 前記基材を下記染色条件によって染色した際に、染色前後における前記基材の波長525nmにおける吸光度の変化が0.05以内である、請求項1~4のいずれか1項に記載の導電性積層体の製造方法。
染色条件:30℃の0.1M水酸化ナトリウム水溶液に前記基材を5分間浸漬した後、前記基材を取り出して、1質量%のローダミン6G水溶液に前記基材を1分間浸漬する。 - 前記導電性積層体がタッチパネルセンサーに用いられる、請求項1~5のいずれか1項に記載の導電性積層体の製造方法。
- 基材と、
前記基材上に配置され、線幅が3μm未満である部分を含むパターン状被めっき層と、
を有し、
前記パターン状被めっき層には、めっき触媒またはその前駆体が付着しており、前記パターン状被めっき層における前記めっき触媒またはその前駆体の付着量が50mg/m2以上である、積層体。 - 基材と、
前記基材上に配置され、線幅が3μm未満である部分を含むパターン状被めっき層と、
前記パターン状被めっき層上に配置された金属層と、
を有し、
前記パターン状被めっき層には、めっき触媒が付着しており、前記パターン状被めっき層における前記めっき触媒の付着量が50mg/m2以上である、導電性積層体。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020044467A1 (ja) * | 2018-08-29 | 2020-03-05 | 日立化成株式会社 | 感光性導電フィルム、積層体及びその製造方法、並びにタッチパネルセンサ |
WO2021250922A1 (ja) * | 2020-06-08 | 2021-12-16 | パナソニックIpマネジメント株式会社 | タッチセンサ |
JPWO2022270504A1 (ja) * | 2021-06-22 | 2022-12-29 |
Families Citing this family (3)
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CN111936665B (zh) * | 2018-03-26 | 2022-10-21 | 富士胶片株式会社 | 前体薄膜、基板、导电性薄膜及其制造方法、触摸面板及其传感器、被镀覆层形成用组合物 |
US10825260B2 (en) | 2019-01-04 | 2020-11-03 | Jand, Inc. | Virtual try-on systems and methods for spectacles |
CN113809509B (zh) * | 2020-06-11 | 2023-07-18 | 华为技术有限公司 | 一种天线成型方法、盖板组件及终端设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009212221A (ja) * | 2008-03-03 | 2009-09-17 | C Uyemura & Co Ltd | 回路基板の製造方法 |
WO2015056445A1 (ja) * | 2013-10-16 | 2015-04-23 | 日立化成株式会社 | 導電性繊維を含む積層体、感光性導電フィルム、導電パターンの製造方法、導電パターン基板、及びタッチパネル |
WO2016009829A1 (ja) * | 2014-07-16 | 2016-01-21 | 富士フイルム株式会社 | タッチパネルセンサー用導電性フィルム、タッチパネルセンサー、タッチパネル |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3123294A1 (de) | 1980-06-16 | 1982-02-04 | PPG Industries, Inc., 15222 Pittsburgh, Pa. | Verfahren zum herstellen leichtzersetzbarer chlorformiate |
US5079600A (en) * | 1987-03-06 | 1992-01-07 | Schnur Joel M | High resolution patterning on solid substrates |
US5468597A (en) * | 1993-08-25 | 1995-11-21 | Shipley Company, L.L.C. | Selective metallization process |
JP2004332064A (ja) * | 2003-05-09 | 2004-11-25 | Murata Mfg Co Ltd | 電子部品の製造方法 |
MY148655A (en) * | 2003-11-27 | 2013-05-15 | Fuji Photo Film Co Ltd | Metal pattern forming method, metal pattern obtained by the same, printed wiring board, conductive film forming method, and conductive film obtained by the same |
DE602005023925D1 (de) * | 2004-03-25 | 2010-11-18 | Fujifilm Corp | Verfahren zur Herstellung eines Musters und eines leitfähigen Musters |
KR100887251B1 (ko) * | 2004-08-26 | 2009-03-06 | 후지필름 가부시키가이샤 | 도전성 패턴재료의 제조방법 |
US8293846B2 (en) * | 2008-09-26 | 2012-10-23 | Fujifilm Corporation | Composition for forming layer to be plated, method of producing metal pattern material, metal pattern material |
JP5258489B2 (ja) * | 2008-09-30 | 2013-08-07 | 富士フイルム株式会社 | 金属膜形成方法 |
JP2010138475A (ja) * | 2008-12-15 | 2010-06-24 | Fujifilm Corp | めっき用触媒液、めっき方法、金属膜を有する積層体の製造方法 |
JP2010239057A (ja) * | 2009-03-31 | 2010-10-21 | Fujifilm Corp | 回路基板の作製方法 |
JP5734670B2 (ja) * | 2011-01-07 | 2015-06-17 | 富士フイルム株式会社 | 被めっき層形成用組成物、金属膜を有する積層体の製造方法 |
JP5835947B2 (ja) * | 2011-05-30 | 2015-12-24 | セーレン株式会社 | 金属膜パターンが形成された樹脂基材 |
JP5756444B2 (ja) * | 2012-02-06 | 2015-07-29 | 富士フイルム株式会社 | 積層体およびその製造方法、並びに、下地層形成用組成物 |
TW201337342A (zh) * | 2012-02-14 | 2013-09-16 | Fujifilm Corp | 鏡面膜、其製造方法、以及太陽熱發電裝置用或太陽光發電裝置用鏡面膜 |
-
2017
- 2017-03-09 CN CN201780018488.2A patent/CN108884568B/zh active Active
- 2017-03-09 KR KR1020187027238A patent/KR20180113605A/ko not_active Application Discontinuation
- 2017-03-09 WO PCT/JP2017/009393 patent/WO2017169612A1/ja active Application Filing
- 2017-03-09 JP JP2018508907A patent/JP6688879B2/ja active Active
- 2017-03-31 TW TW106110930A patent/TWI740923B/zh active
-
2018
- 2018-09-14 US US16/131,070 patent/US20190010608A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009212221A (ja) * | 2008-03-03 | 2009-09-17 | C Uyemura & Co Ltd | 回路基板の製造方法 |
WO2015056445A1 (ja) * | 2013-10-16 | 2015-04-23 | 日立化成株式会社 | 導電性繊維を含む積層体、感光性導電フィルム、導電パターンの製造方法、導電パターン基板、及びタッチパネル |
WO2016009829A1 (ja) * | 2014-07-16 | 2016-01-21 | 富士フイルム株式会社 | タッチパネルセンサー用導電性フィルム、タッチパネルセンサー、タッチパネル |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020044467A1 (ja) * | 2018-08-29 | 2020-03-05 | 日立化成株式会社 | 感光性導電フィルム、積層体及びその製造方法、並びにタッチパネルセンサ |
WO2021250922A1 (ja) * | 2020-06-08 | 2021-12-16 | パナソニックIpマネジメント株式会社 | タッチセンサ |
JPWO2022270504A1 (ja) * | 2021-06-22 | 2022-12-29 | ||
WO2022270504A1 (ja) * | 2021-06-22 | 2022-12-29 | 国立大学法人岩手大学 | 被めっき基板の製造方法 |
JP7463001B2 (ja) | 2021-06-22 | 2024-04-08 | 国立大学法人岩手大学 | 被めっき基板の製造方法 |
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