WO2017138366A1 - Procédé permettant de purifier un composé fluoré gazeux - Google Patents

Procédé permettant de purifier un composé fluoré gazeux Download PDF

Info

Publication number
WO2017138366A1
WO2017138366A1 PCT/JP2017/002853 JP2017002853W WO2017138366A1 WO 2017138366 A1 WO2017138366 A1 WO 2017138366A1 JP 2017002853 W JP2017002853 W JP 2017002853W WO 2017138366 A1 WO2017138366 A1 WO 2017138366A1
Authority
WO
WIPO (PCT)
Prior art keywords
fluorine compound
fluoride
compound gas
metal
metal component
Prior art date
Application number
PCT/JP2017/002853
Other languages
English (en)
Japanese (ja)
Inventor
章史 八尾
浩平 大矢
雄太 武田
純 江藤
Original Assignee
セントラル硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017010594A external-priority patent/JP6792158B2/ja
Application filed by セントラル硝子株式会社 filed Critical セントラル硝子株式会社
Priority to US16/076,536 priority Critical patent/US10926211B2/en
Priority to KR1020207020511A priority patent/KR102231220B1/ko
Priority to KR1020187025975A priority patent/KR102136391B1/ko
Publication of WO2017138366A1 publication Critical patent/WO2017138366A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
    • B01J20/04—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of alkali metals, alkaline earth metals or magnesium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/24—Inter-halogen compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten

Definitions

  • the present invention relates to a method for purifying a fluorine compound gas, which purifies the fluorine compound gas by removing the metal component from the fluorine compound gas containing a metal component as an impurity.
  • Fluorine compound gas is used for substrate etching or thin film formation such as CVD (Chemical Vapor Deposition) in the manufacturing process of semiconductor devices, MEMS (Micro Electro Mechanical Systems) devices, TFT (Thin Film Transistor) panels for liquid crystals and solar cells. Widely used as cleaning gas or fluorinating agent for fluorine chemical synthesis.
  • CVD Chemical Vapor Deposition
  • MEMS Micro Electro Mechanical Systems
  • TFT Thin Film Transistor
  • the technical difficulty of processing is increasing year by year due to the development of miniaturization and high integration technology.
  • impurities contained in the semiconductor device material may cause problems such as a reduction in product yield in the manufacturing process of the semiconductor device. Therefore, the fluorine compound gas used as a cleaning gas is also required to be highly purified.
  • a metal impurity that has a large influence on the electrical characteristics of a semiconductor device is reduced to less than 10 mass ppb. Very high purity is required.
  • the mixed gas containing the gas and impurities is cooled to a low temperature and liquefied, and distillation is caused by the difference in temperature when each gas in the mixed gas condenses.
  • a cryogenic purification method which is a method of separating and collecting by partial condensation.
  • energy is applied to a fluorine compound to react the fluorine compound to generate a fluorine gas component and a component other than the fluorine gas, and the generated fluorine gas component and a gas component other than the fluorine gas component are liquidized.
  • a cryogenic purification method is disclosed in which cooling is performed using nitrogen or the like, and fluorine gas is separated according to the difference in boiling points between the two.
  • Patent Document 1 cannot be applied when the difference in boiling point or melting point between a fluorine compound gas to be purified and impurities contained therein is small.
  • the impurity is a metal impurity
  • the metal impurity is usually contained in the gas as a metal or metal compound fine particle or cluster, or a gas of a metal halide or metal complex having a relatively high vapor pressure.
  • the metal impurities have a very high sublimation property, and the amount contained as impurities in the fluorine compound gas is very small, so that there is a problem that it is difficult to remove them by a cryogenic purification method.
  • the equipment is complex and large, and it can be installed in a fluorine compound gas manufacturing plant, but it is difficult to install equipment when processing a small amount of gas. There is also a problem.
  • Patent Document 2 discloses a method for removing sublimated manganese fluoride contained in fluorine gas generated by heating MnF 4. Specifically, manganese fluoride and sodium fluoride are disclosed. It is described that a composite fluoride can be formed and removed by the formula MnF 4 + 2NaF ⁇ Na 2 MnF 6 .
  • Patent Document 2 The method described in Patent Document 2 is an effective method when the impurity is hydrogen fluoride. However, it has little effect on impurities other than hydrogen fluoride. Patent Document 2 describes a method for removing hydrogen fluoride contained in fluorine gas, but does not describe a removal method when the impurity is a metal impurity.
  • Patent Document 3 discloses heating to a high temperature of 100 ° C. or higher in order to react sodium fluoride and manganese fluoride to form a composite fluoride.
  • a reaction between the composite fluoride gas and the metal container filled with sodium fluoride also occurs, and the metal component of the container is mixed into the composite fluoride gas and becomes a new impurity.
  • An object of the present invention is to provide a method for purifying a fluorine compound gas, which purifies the fluorine compound gas by removing trace metal components contained as impurities in the fluorine compound gas with an apparatus having a simple structure.
  • the present inventors have found that when a small amount of hydrogen fluoride is allowed to coexist in a fluorine compound gas containing a metal component as an impurity, the metal component contained in the fluorine compound gas is reduced. It has been found that it can be adsorbed and removed by solid metal fluoride together with hydrogen fluoride to purify the fluorine compound gas, and the present invention has been completed.
  • the present invention includes inventions 1 to 13.
  • [Invention 1] A method for purifying a fluorine compound gas that removes a metal component from a fluorine compound gas containing hydrogen fluoride and a metal component, A method for purifying a fluorine compound gas, comprising a removing step of bringing the fluorine compound gas into contact with a solid metal fluoride and adsorbing and removing hydrogen fluoride and a metal component on the metal fluoride.
  • the fluorine compound gas is at least one fluorine selected from the group consisting of ClF, ClF 3 , IF 5 , IF 7 , BrF 3 , BrF 5 , NF 3 , WF 6 , SiF 4 , CF 4 , SF 6 , and BF 3.
  • the method for purifying a fluorine compound gas according to the first aspect comprising a compound.
  • invention 4 The method for purifying a fluorine compound gas according to invention 3, wherein the concentration adjusting step is an addition step of adding hydrogen fluoride to the fluorine compound gas.
  • invention 5 The method for purifying a fluorine compound gas according to any one of Inventions 1 to 4, wherein the metal fluoride is at least one selected from the group consisting of alkali metal fluorides and alkaline earth metal fluorides.
  • invention 6 The fluorine compound gas according to invention 5, wherein the metal fluoride is at least one selected from the group consisting of lithium fluoride, sodium fluoride, potassium fluoride, magnesium fluoride, calcium fluoride and barium fluoride. Purification method.
  • the temperature at which the fluorine compound gas is brought into contact with the solid metal fluoride in the removing step is not less than the boiling point of the fluorine compound contained in the fluorine compound gas and not more than 50 ° C., according to any one of inventions 1 to 6. Of purifying fluorine compound gas.
  • invention 8 Any one of inventions 1 to 7, wherein the metal component contained in the fluorine compound gas before the removing step contains at least one metal selected from the group consisting of Fe, Cr, Mn, Co, Ti, Mo, Cu and Ni.
  • the purification method of the fluorine compound gas as described in one.
  • invention 9 Any one of Inventions 1 to 8, wherein each content of Fe, Cr, Mn, Co, Ti, Mo, Cu, and Ni contained in the fluorine compound gas after the removing step is 10 mass ppb or less.
  • [Invention 11] A method for producing a purified fluorine compound gas for removing a metal component contained in a fluorine compound gas, Production of a purified fluorine compound gas comprising a removal step of contacting hydrogen fluoride and a metal component with a solid metal fluoride and removing the hydrogen fluoride and the metal component by adsorbing the metal fluoride to the metal fluoride. Method.
  • a gas that can be easily removed from a fluorine compound gas containing a metal component as an impurity with an apparatus having a simple structure and can be used for applications such as etching corresponding to miniaturization in the semiconductor field. Can provide.
  • 1 and 2 show only an example of a method for carrying out the present invention, and the present invention can be carried out by a method other than this embodiment.
  • the purification apparatus 10 is supplied with the fluorine compound gas from the fluorine compound gas supply unit 20 and supplies the outlet gas to the external device 30.
  • the purification apparatus 10 includes at least a metal fluoride filling unit 100 and, if necessary, a hydrogen fluoride concentration adjusting unit 110 and a hydrogen fluoride supply unit 120.
  • the metal fluoride filling unit 100 is a container filled with a drug containing a metal fluoride, and is appropriately designed depending on the purity and flow rate of the flowing gas.
  • a detoxification facility in which metal fluoride pellets are filled on the bottom mesh, a gas to be treated is introduced from the lower part, and discharged from the upper part.
  • the drug to be filled may be powdery, granular, or pelletized as long as it contains a metal fluoride, and the content of the metal fluoride is not particularly limited, but usually has a purity of 90% by mass or more, preferably a purity. It is 95 mass% or more.
  • metal fluoride to be used examples include alkali metal fluoride and alkaline earth metal fluoride. Specifically, lithium fluoride, sodium fluoride, potassium fluoride, magnesium fluoride, calcium fluoride, An example is barium fluoride. These metal fluorides are preferable because they have low reactivity with fluorine compounds but can adsorb hydrogen fluoride gas.
  • the material used for the container of the metal fluoride filling unit 100 is a metal that is corrosion resistant to fluorine compounds, fluorine, or hydrogen fluoride.
  • nickel, nickel-based alloy Hastelloy (registered trademark), Monel (registered trademark) or Inconel (registered trademark), aluminum, aluminum alloy, or stainless steel can be selected.
  • Hastelloy registered trademark
  • Monel registered trademark
  • Inconel registered trademark
  • aluminum, aluminum alloy, or stainless steel can be selected.
  • Fe or Cr contained in the material reacts with the fluorine compound, which may be a source of metal impurities. Before use, distribute fluorine compound gas or fluorine gas, It is necessary to perform a treatment such as forming a passive film.
  • the use temperature of the metal fluoride filling unit 100 that is, the temperature at which the fluorine compound gas is brought into contact with the solid metal fluoride is not less than the boiling point of the fluorine compound contained in the fluorine compound gas and not more than 50 ° C. If the operating temperature is less than the boiling point of the fluorine compound at the pressure in the metal fluoride filling portion 100, a problem of gas condensing in the metal fluoride filling portion 100 occurs. Further, a temperature higher than 50 ° C. is not preferable because the reaction between the fluorine compound gas and the container of the metal fluoride filling unit 100 is accelerated, and metal impurities derived from the container may be generated and the concentration of the metal component may increase. .
  • the metal fluoride filling part 100 can be used at a temperature as low as possible to obtain a purification effect, it requires a separate cooling facility, and thus is usually used near room temperature (about 20 ° C.). .
  • the inside of the apparatus such as the metal fluoride filling unit 100 may be decompressed and used at a temperature of 50 ° C. or less.
  • the fluorine compound gas supplied to the metal fluoride filling unit 100 preferably contains 50 ppm by volume or more and 1% by volume or less of hydrogen fluoride. Moreover, about each content of each metal component (Fe, Cr, Mn, Co, Ti, Mo, Cu, Ni) contained in a fluorine compound gas, it is a semiconductor device manufacture in the exit of the metal fluoride filling part 100. It is preferable that all are 10 mass ppb or less so that it can be used in a process.
  • each content of each metal component (Fe, Cr, Mn, Co, Ti, Mo, Cu, Ni) contained in the fluorine compound gas at the inlet of the metal fluoride filling part 100, 10 mass ppb or more 1000 mass ppb or less, preferably 20 mass ppb or more and 500 mass ppb or less. If the amount of the metal component is too large, the metal component may not be completely removed. If the amount is too small, the necessity of applying the present invention is eliminated.
  • Each metal component is contained in the gas as fine particles or clusters of metal or metal compound, or a gas of metal halide or metal complex having a relatively high vapor pressure. However, the content of each metal component is evaluated not as the content of a metal compound or a metal complex but as the content of a single metal.
  • the metal component is a member such as a reactor or piping in the production process of the fluorine compound gas, or a metal used as a material used in the cylinder is corroded by the fluorine compound gas. Mixed with fluorine compound gas. The content can be suppressed to 1000 mass ppb or less by using the above-mentioned corrosion-resistant metal for the member and the cylinder.
  • the amount of hydrogen fluoride contained in the fluorine compound gas at the outlet from the metal fluoride filling unit 100 is 50 ppm by volume or less with respect to the total volume of the fluorine compound gas, hydrogen fluoride, and the metal component. It is preferable to become.
  • the fluorine compound gas supply unit 20 is a fluorine compound gas storage unit manufactured by a fluorine compound gas manufacturing facility, a cylinder filled with the fluorine compound gas, or the like.
  • the fluorine compound gas to be supplied is not particularly limited as long as it does not directly react with the metal fluoride filled in the metal fluoride filling unit 100.
  • the purity of the gas to be supplied there is no restriction on the purity of the gas to be supplied, but when a low-concentration gas is used, the load on the metal fluoride filling unit 100 installed on the downstream side increases, resulting in an increase in the size of the apparatus and the frequency of drug replacement. It is preferable to use a gas from which impurities have been removed in advance by distillation or a cryogenic purification method. Specifically, it is preferable to use those having a purity of 90% by volume or more, more preferably 99% by volume or more.
  • An external device 30 is connected downstream of the purification device 10.
  • the external device 30 corresponds to a fluorine compound gas filling facility.
  • the etching apparatus corresponds to the external apparatus 30.
  • the purification device 10 of the present invention is provided in the middle of the gas inlet and piping of the etching device, and the semiconductor device is etched using the gas from which the metal component has been removed by supplying the outlet gas of the purification device 10 to the etching chamber. can do.
  • the hydrogen fluoride concentration adjusting unit 110 adjusts the amount of hydrogen fluoride contained in the fluorine compound gas supplied to the purification apparatus 10 to an amount suitable for supplying to the metal fluoride filling unit 100.
  • the content of hydrogen fluoride in the fluorine compound gas supplied to the metal fluoride filling unit 100 is 50 ppm by volume or more and 1% by volume with respect to the total volume of the fluorine compound gas, hydrogen fluoride, and metal components. Or less, more preferably 100 volume ppm or more and 2000 volume ppm or less, and may be 200 volume ppm or more and 1000 ppm or less.
  • the hydrogen fluoride content is less than 50 ppm, the amount of hydrogen fluoride is too small, and it is often difficult to sufficiently reduce the amount of the metal component.
  • the fluorine compound gas supplied from the fluorine compound gas supply unit 20 contains 50 volume ppm or more of hydrogen fluoride in advance, it is supplied to the metal fluoride filling unit 100 as it is, but the hydrogen fluoride content is 50 volumes. In the case of less than ppm, it is preferable to supply hydrogen fluoride from the hydrogen fluoride supply unit 120.
  • the hydrogen fluoride concentration adjusting unit 110 may be diluted with the same type of fluorine compound gas having a lower hydrogen fluoride content, or a metal Hydrogen fluoride may be roughly removed with a chemical such as fluoride.
  • the hydrogen fluoride supply unit 120 is connected by a pipe or the like in the upstream portion of the metal fluoride filling unit 100, and can add hydrogen fluoride to the fluorine compound gas.
  • a container or a cylinder filled with hydrogen fluoride is connected to the hydrogen fluoride supply unit 120.
  • the purity of the hydrogen fluoride to be connected is preferably high-purity, and the purity is preferably 99.5% by mass or more, more preferably 99.9% by mass or more. Further, regarding the metal impurities, it is preferable that the concentration of each of the mixed Fe, Cr, Mn, Co, Ti, Mo, Cu, and Ni metal components is 10 mass ppb or less.
  • the concentration of the metal component can be reduced to a very low level with an apparatus having a simple structure simply filled with a drug. Therefore, even in a small factory, a gas with few metal impurities can be obtained using the present invention.
  • the purification device 10 can be provided immediately before using the fluorine compound gas, it is possible to prevent mixing of metal components derived from piping and the like, and the external device 30 can use a gas with less metal impurities. .
  • Example According to the system diagram shown in FIG. 2, a cylinder filled with ClF, ClF 3 , IF 7 , BrF 5 , NF 3 , and WF 6 as the fluorine compound gas supply unit 20 (purity: 99 vol% or more, 99.99 vol% or less)
  • the hydrogen fluoride supply unit 120 was connected to a cylinder filled with HF (HF purity: 99.99% by volume).
  • HF HF purity: 99.99% by volume.
  • the supply amount of each gas was controlled using a mass flow controller (manufactured by Horiba Estec Co., Ltd.) as a flow rate control device on the downstream side of each cylinder.
  • metal fluoride filling portion 100 what filled 100 g of NaF pellets (Morita Chemical Co., Ltd.) in a 1 inch (25.4 mm) ⁇ 200 mm Ni tube was used for the metal fluoride filling portion 100.
  • the metal fluoride filling part 100 was used by heating or cooling to room temperature or a predetermined temperature. And the gas of the part corresponded to the inlet_port
  • ICP-MS inductively coupled plasma mass spectrometer
  • the metal component is a component such as a reactor or a pipe in the production process of the fluorine compound gas, or the metal used as a material used in the cylinder is corroded by the fluorine compound gas. It is mixed in the compound gas.
  • Example 1 it was possible to reduce the metal concentration by bringing IF 7 containing a predetermined amount of hydrogen fluoride into contact with NaF at 25 ° C. Further, in Example 2 and Example 3, the metal concentration could be sufficiently reduced even when the temperature of contact with NaF was 45 ° C. or 0 ° C., but in Example 2 of contact at 45 ° C., Example Compared to 1 and Example 3, the metal concentration was higher. This is presumed to be because IF 7 reacted somewhat with the metal material constituting the device. In Example 4, the concentration of hydrogen fluoride contained in the IF 7 gas was 58 vol ppm, the effect of removing the metal components was confirmed. However, because the concentration of hydrogen fluoride was low, some metal components were included more than in Example 1.
  • Example 11 to 13 the same procedure as in Example 1 was performed except that the chemical filling the metal fluoride filler 100 was changed to KF pellets, MgF 2 pellets, and BaF 2 pellets. As a result, the effect of removing the metal component was confirmed in the same manner as in Example 1.
  • a metal component contained in a fluorine compound gas can be easily removed, and a gas usable for applications such as etching corresponding to miniaturization in the semiconductor field can be provided.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)

Abstract

La présente invention concerne un procédé de purification permettant d'éliminer un constituant métallique présent dans un composé fluoré gazeux qui contient du fluorure d'hydrogène et un constituant métallique. Ce procédé comprend une étape d'élimination permettant de mettre en contact le composé fluoré gazeux avec un fluorure de métal solide, et d'éliminer le fluorure d'hydrogène et le constituant métallique associé par adsorption par le fluorure de métal. Le composé fluoré gazeux contient de préférence un ou plusieurs types choisis dans le groupe constitué par ClF, ClF3, IF5, IF7, BrF3, BrF5, NF3, WF6, SiF4, CF4, SF6 et BF3. Le fluorure de métal est également de préférence un fluorure de métal alcalin ou un fluorure de métal alcalino-terreux. De manière surprenante, la présence de fluorure d'hydrogène dans un composé fluoré gazeux permet d'éliminer un constituant métallique présent dans celui-ci sous forme d'impureté par adsorption par un fluorure métallique.
PCT/JP2017/002853 2016-02-09 2017-01-27 Procédé permettant de purifier un composé fluoré gazeux WO2017138366A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US16/076,536 US10926211B2 (en) 2016-02-09 2017-01-27 Method for purifying fluorine compound gas
KR1020207020511A KR102231220B1 (ko) 2016-02-09 2017-01-27 불소 화합물 가스의 정제 방법
KR1020187025975A KR102136391B1 (ko) 2016-02-09 2017-01-27 불소 화합물 가스의 정제 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016022452 2016-02-09
JP2016-022452 2016-02-09
JP2017010594A JP6792158B2 (ja) 2016-02-09 2017-01-24 フッ素化合物ガスの精製方法
JP2017-010594 2017-01-24

Publications (1)

Publication Number Publication Date
WO2017138366A1 true WO2017138366A1 (fr) 2017-08-17

Family

ID=59563287

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/002853 WO2017138366A1 (fr) 2016-02-09 2017-01-27 Procédé permettant de purifier un composé fluoré gazeux

Country Status (1)

Country Link
WO (1) WO2017138366A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112390230A (zh) * 2020-11-20 2021-02-23 苏州金宏气体股份有限公司 一种三氟化氯的提纯方法及提纯系统
EP3782969A1 (fr) 2019-08-22 2021-02-24 Fujian Yongjing Technology Co., Ltd. Procédé de fluoration de composés inorganiques ou organiques par fluoration directe
CN112533873A (zh) * 2018-08-17 2021-03-19 中央硝子株式会社 六氟化钨的制造方法
CN112915719A (zh) * 2021-02-02 2021-06-08 福建德尔科技有限公司 电子级三氟化氯的分离装置及分离方法
CN115945041A (zh) * 2022-12-30 2023-04-11 浙江研一新能源科技有限公司 一种五氟化磷的纯化装置及五氟化磷的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009215588A (ja) * 2008-03-10 2009-09-24 Toyo Tanso Kk フッ素ガス発生装置
JP2009242215A (ja) * 2008-04-01 2009-10-22 Iwatani Internatl Corp フッ素回収方法及びフッ化カルシウムの精製方法
JP2013535397A (ja) * 2010-08-05 2013-09-12 ソルヴェイ（ソシエテ アノニム） フッ素の精製方法
WO2015076415A1 (fr) * 2013-11-25 2015-05-28 ギガフォトン株式会社 Dispositif de laser à gaz

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009215588A (ja) * 2008-03-10 2009-09-24 Toyo Tanso Kk フッ素ガス発生装置
JP2009242215A (ja) * 2008-04-01 2009-10-22 Iwatani Internatl Corp フッ素回収方法及びフッ化カルシウムの精製方法
JP2013535397A (ja) * 2010-08-05 2013-09-12 ソルヴェイ（ソシエテ アノニム） フッ素の精製方法
WO2015076415A1 (fr) * 2013-11-25 2015-05-28 ギガフォトン株式会社 Dispositif de laser à gaz

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112533873A (zh) * 2018-08-17 2021-03-19 中央硝子株式会社 六氟化钨的制造方法
EP3782969A1 (fr) 2019-08-22 2021-02-24 Fujian Yongjing Technology Co., Ltd. Procédé de fluoration de composés inorganiques ou organiques par fluoration directe
CN112390230A (zh) * 2020-11-20 2021-02-23 苏州金宏气体股份有限公司 一种三氟化氯的提纯方法及提纯系统
CN112915719A (zh) * 2021-02-02 2021-06-08 福建德尔科技有限公司 电子级三氟化氯的分离装置及分离方法
WO2022166270A1 (fr) * 2021-02-02 2022-08-11 福建德尔科技股份有限公司 Dispositif de séparation de trifluorure de chlore à qualité électronique et procédé de séparation associé
CN115945041A (zh) * 2022-12-30 2023-04-11 浙江研一新能源科技有限公司 一种五氟化磷的纯化装置及五氟化磷的制备方法

Similar Documents

Publication Publication Date Title
JP6792158B2 (ja) フッ素化合物ガスの精製方法
WO2017138366A1 (fr) Procédé permettant de purifier un composé fluoré gazeux
JP6867581B2 (ja) フッ素ガスの精製方法
CN111918839B (zh) 六氟化钼的制造方法和制造装置
TWI525043B (zh) Recovery method and recovery unit of iodinated iodide compound derived from iodine iodide
CN110167878B (zh) 多晶硅制造方法
JP2008094630A (ja) フッ酸生成装置及びフッ酸生成方法
WO2017138367A1 (fr) Procédé permettant de purifier du fluor gazeux
CN103497086A (zh) 八氟丙烷的制备方法
CN105217575B (zh) 一种反应精馏去除氟化氢中水分的方法
CN115583631A (zh) 一种三氟化氯的制备方法及装置
CN111886674B (zh) 基板处理用气体、保管容器和基板处理方法
WO2021070550A1 (fr) Méthode de production de pentafluorure de brome
TW201738171A (zh) 氟化鹵素間化合物之純化方法
JP3512285B2 (ja) 精ヨウ化水素の製造方法
JP3986376B2 (ja) 四フッ化珪素の製造法
CN114180535A (zh) 一种四氟化硫的生产提纯工艺及系统
CN111991978A (zh) 一种氟化氢气体的除水装置及方法
CN117563408A (zh) 一种乙炔提纯装置及其提纯方法
EP2814997A1 (fr) Système de dépôt et procédé de formation d'un matériau contenant un métalloïde à l'aide de celui-ci

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17750091

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1020187025975

Country of ref document: KR

122 Ep: pct application non-entry in european phase

Ref document number: 17750091

Country of ref document: EP

Kind code of ref document: A1