WO2017130381A1 - 半導体装置 - Google Patents
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。この半導体装置は、基板15を備えている。基板15は、金属で形成されたベース板10、ベース板10の上に設けられた絶縁基板12、絶縁基板12の表面に形成された回路パターン14を備えている。ベース板10と絶縁基板12の間に放熱グリースを設けても良い。はんだ16により基板15と半導体チップ18が固定されている。半導体チップ18の裏面が回路パターン14にはんだ付けされている。半導体チップ18は複数設けられる。
図13には、中継基板20と基板15を接合する前の様子が描かれている。第1下部導体20Cの下にははんだが接合しない非接合部50が形成されている。非接合部50は例えばソルダーレジスト又はポリイミドである。非接合部50から露出する第1下部導体20Cの幅bは、はんだ19の幅aより小さい。
図15には、中継基板20と基板15を接合する前の様子が描かれている。はんだ19は、下部本体20aと半導体チップ18を接合するために設けられている。はんだ19の一部である外周部の直上には、下部本体20a、絶縁板20A及び上部導体20Bがない。つまり、中継基板20に開口20hが設けられている。開口20hに囲まれた第1下部導体20Cの幅bは、はんだ19の幅aより大きい。
図17は、実施の形態4に係る半導体装置の断面図である。中継基板20の上部本体20cに能動部品60、62が電気的に接続されている。能動部品60、62は、例えば抵抗、コンデンサ又は制御IC等である。能動部品60、62は、半導体チップ18又は半導体装置の保護機能を担う。従来は半導体装置の外部に設けられた部品を能動部品60、62として中継基板20の上に設けることで、半導体装置の機能及び信頼性を高めることができる。
図18は、実施の形態5に係る半導体装置の断面図である。この半導体装置は、基板15、半導体チップ18、中継基板20及び外部電極が一括して組み付けられた半完成品を、ケースを使用せず、樹脂40で封止することで形成されたものである。樹脂40による封止では、金型を外枠として使用する。基板15と中継基板20の間隔は、半導体チップ18の厚みとほぼ同じとなり、非常に狭い。半導体チップ18の厚みは例えば100μmである。
Claims (16)
- 基板と、
前記基板に固定された複数の半導体チップと、
貫通孔が形成された絶縁板と、
前記絶縁板の下面に形成され前記複数の半導体チップのいずれかにはんだ付けされた下部本体と、前記下部本体につながり平面視で前記絶縁板の外に伸びる下部突出部を有する第1下部導体と、
前記絶縁板の下面に形成され前記複数の半導体チップのいずれかにはんだ付けされた第2下部導体と、
前記絶縁板の上面に形成された上部本体と、前記上部本体につながり平面視で前記絶縁板の外に伸びる上部突出部とを有する上部導体と、
前記貫通孔に設けられ、前記上部本体と前記第2下部導体を接続する接続部と、
前記下部突出部に接続された第1外部電極と、
前記上部突出部に接続された第2外部電極と、を備えたことを特徴とする半導体装置。 - 前記複数の半導体チップはトランジスタチップを有し、
前記下部本体又は前記第2下部導体は、前記トランジスタチップのコレクタ又はエミッタに電気的に接続されたことを特徴とする請求項1に記載の半導体装置。 - 前記下部突出部又は前記上部突出部が折り曲げられることで、前記下部突出部と前記第1外部電極の接続位置の高さと、前記上部突出部と前記第2外部電極の接続位置の高さを一致させたことを特徴とする請求項1又は2に記載の半導体装置。
- 前記複数の半導体チップはトランジスタチップを有し、
前記下部本体と前記上部本体が平面視で重なる部分を有することで、前記トランジスタチップのコレクタ電流とエミッタ電流が平面視で反対方向に流れることを特徴とする請求項1又は3に記載の半導体装置。 - 前記第1下部導体又は前記第2下部導体の厚みは不均一であることを特徴とする請求項1~4のいずれか1項に記載の半導体装置。
- 前記半導体チップと前記下部本体を接合するはんだは、前記下部本体と接する面積より前記半導体チップと接する面積の方が大きくなるように設けられ、
前記半導体チップと前記第2下部導体を接合するはんだは、前記第2下部導体と接する面積より前記半導体チップと接する面積の方が大きくなるように設けられたことを特徴とする請求項1~5のいずれか1項に記載の半導体装置。 - 前記半導体チップと前記下部本体を接合するはんだの一部の直上には、前記下部本体、前記絶縁板及び前記上部導体がないことを特徴とする請求項1~6のいずれか1項に記載の半導体装置。
- 前記半導体チップと前記第2下部導体を接合するはんだの一部の直上には、前記第2下部導体、前記絶縁板及び前記上部導体がないことを特徴とする請求項1~6のいずれか1項に記載の半導体装置。
- 前記接続部は金属部材を圧接して形成することを特徴とする請求項1~8のいずれか1項に記載の半導体装置。
- 前記金属部材は前記貫通孔を埋めないように設けられ、
前記金属部材に接し、前記貫通孔を埋める埋め込み金属を備え、
前記埋め込み金属は前記半導体チップの方向に突き出ていることを特徴とする請求項9に記載の半導体装置。 - 前記絶縁板、前記第1下部導体、前記第2下部導体、前記上部導体、及び前記複数の半導体チップを覆い、前記第1外部電極と前記第2外部電極の一部を外部に露出する樹脂を備え、
前記絶縁板には前記樹脂で埋められた埋め込み孔が設けられたことを特徴とする請求項1~10のいずれか1項に記載の半導体装置。 - 前記上部本体に電気的に接続された能動部品を備えたことを特徴とする請求項1~11のいずれか1項に記載の半導体装置。
- 前記第1下部導体と前記第1外部電極のペアを複数有し、
複数の前記第1外部電極は異なる材料で形成されたことを特徴とする請求項1~12のいずれか1項に記載の半導体装置。 - 前記第1外部電極と前記第2外部電極は異なる材料で形成されたことを特徴とする請求項1~12のいずれか1項に記載の半導体装置。
- 前記第1外部電極は前記第1下部導体より厚く、前記第2外部電極は前記上部導体より厚いことを特徴とする請求項1~14のいずれか1項に記載の半導体装置。
- 前記絶縁板、前記第1下部導体、前記第2下部導体、前記上部導体、及び前記複数の半導体チップを覆い、前記第1外部電極と前記第2外部電極の一部を外部に露出する樹脂を備え、
側面に前記樹脂が露出することを特徴とする請求項1に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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DE112016006336.9T DE112016006336T5 (de) | 2016-01-29 | 2016-01-29 | Halbleitervorrichtung |
PCT/JP2016/052695 WO2017130381A1 (ja) | 2016-01-29 | 2016-01-29 | 半導体装置 |
US15/766,903 US10204886B2 (en) | 2016-01-29 | 2016-01-29 | Semiconductor device |
CN201680079904.5A CN108496249B (zh) | 2016-01-29 | 2016-01-29 | 半导体装置 |
JP2017563496A JP6460266B2 (ja) | 2016-01-29 | 2016-01-29 | 半導体装置 |
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PCT/JP2016/052695 WO2017130381A1 (ja) | 2016-01-29 | 2016-01-29 | 半導体装置 |
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US (1) | US10204886B2 (ja) |
JP (1) | JP6460266B2 (ja) |
CN (1) | CN108496249B (ja) |
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WO (1) | WO2017130381A1 (ja) |
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US10068819B2 (en) | 2016-06-23 | 2018-09-04 | Mitsubishi Electric Corporation | Semiconductor device |
JP2019197842A (ja) * | 2018-05-11 | 2019-11-14 | 三菱電機株式会社 | パワーモジュール、電力変換装置、およびパワーモジュールの製造方法 |
JP2020043102A (ja) * | 2018-09-06 | 2020-03-19 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP2022058877A (ja) * | 2018-04-24 | 2022-04-12 | ウルフスピード インコーポレイテッド | 湿気保護封止を有するパッケージ化された電子回路とその形成方法 |
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- 2016-01-29 US US15/766,903 patent/US10204886B2/en active Active
- 2016-01-29 JP JP2017563496A patent/JP6460266B2/ja active Active
- 2016-01-29 DE DE112016006336.9T patent/DE112016006336T5/de active Pending
- 2016-01-29 CN CN201680079904.5A patent/CN108496249B/zh active Active
- 2016-01-29 WO PCT/JP2016/052695 patent/WO2017130381A1/ja active Application Filing
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JP2003017658A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | 電力用半導体装置 |
WO2009150875A1 (ja) * | 2008-06-12 | 2009-12-17 | 株式会社安川電機 | パワーモジュールおよびその制御方法 |
JP2013021371A (ja) * | 2012-10-29 | 2013-01-31 | Okutekku:Kk | 半導体装置及び半導体装置の製造方法 |
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US10068819B2 (en) | 2016-06-23 | 2018-09-04 | Mitsubishi Electric Corporation | Semiconductor device |
JP2022058877A (ja) * | 2018-04-24 | 2022-04-12 | ウルフスピード インコーポレイテッド | 湿気保護封止を有するパッケージ化された電子回路とその形成方法 |
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JP2019197842A (ja) * | 2018-05-11 | 2019-11-14 | 三菱電機株式会社 | パワーモジュール、電力変換装置、およびパワーモジュールの製造方法 |
JP2020043102A (ja) * | 2018-09-06 | 2020-03-19 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
US10790218B2 (en) | 2018-09-06 | 2020-09-29 | Mitsubishi Electric Corpration | Semiconductor device and electric power conversion apparatus |
JP7035920B2 (ja) | 2018-09-06 | 2022-03-15 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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Also Published As
Publication number | Publication date |
---|---|
CN108496249A (zh) | 2018-09-04 |
DE112016006336T5 (de) | 2018-10-18 |
US10204886B2 (en) | 2019-02-12 |
JPWO2017130381A1 (ja) | 2018-09-27 |
US20180294253A1 (en) | 2018-10-11 |
CN108496249B (zh) | 2021-08-13 |
JP6460266B2 (ja) | 2019-01-30 |
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