JP7183964B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7183964B2 JP7183964B2 JP2019108846A JP2019108846A JP7183964B2 JP 7183964 B2 JP7183964 B2 JP 7183964B2 JP 2019108846 A JP2019108846 A JP 2019108846A JP 2019108846 A JP2019108846 A JP 2019108846A JP 7183964 B2 JP7183964 B2 JP 7183964B2
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Description
本開示の第1実施形態に関して、図1~図7を用いて説明する。図1に示す半導体装置10は、例えば自動車および電子機器などの回路基板30に実装される形式のものである。半導体装置10は、たとえば電動パワーステアリングシステムに用いられる。半導体装置10は、半導体素子11、複数の端子12、複数の導電部材13、接続部材14および樹脂パッケージ15を備えている。
次に、本開示の第2実施形態に関して、図8~図10を用いて説明する。本実施形態の半導体装置10Aでは、凹に形成されている部分は端子12の下面から端子12の上面まで貫通している点に特徴を有する。また端子12の突出部16の先端面44が、凹状になっている部分を有する点に特徴を有する。
次に、本開示の第3実施形態に関して、図11を用いて説明する。本実施形態の半導体装置10Bでは、凹ではなく凸が端子12の下面に部分的に形成されている点に特徴を有する。
以上、本開示の好ましい実施形態について説明したが、本開示は前述した実施形態に何ら制限されることなく、本開示の主旨を逸脱しない範囲において種々変形して実施することが可能である。
12b…第2端子 12c…第3端子 13…導電部材 13a…第1導電部材
13b…第2導電部材 14…接続部材 15…樹脂パッケージ(絶縁部材)
16a…突出部 17…はんだ 21…素子本体 22…第1電極 23…第2電極
24…第3電極 30…回路基板(実装対象物) 41…凹部 42…内側面
43…外側面 44…先端面 50…凸部 51…凸面
X…長手方向 Y…幅方向 Z…上下方向
Claims (3)
- 実装対象物(30)とはんだ(17)を用いて実装される半導体装置(10)であって、
複数の電極(22~24)を有する半導体素子(11)と、
前記半導体素子を覆う絶縁部材(15)と、
複数の前記電極と電気的に接続され、少なくとも一部が前記絶縁部材の外へ露出している複数の端子(12,12a,12b,12c)とを含み、
前記半導体素子は、電界効果トランジスタであって、複数の前記電極はゲート電極、ドレイン電極およびソース電極を含み、
前記ゲート電極と電気的に接続された前記端子の下面にのみ、前記実装対象物との接続部分の形状が凹または凸である部分が形成されている半導体装置。 - 前記ゲート電極と電気的に接続された前記端子は、長手方向(X)に延びている長手状の部材であり、前記凹または前記凸は前記長手方向に交差する幅方向(Y)に延びて、前記端子の前記幅方向の両端部まで至る請求項1に記載の半導体装置。
- 前記ゲート電極と電気的に接続された前記端子の下面は、少なくとも前記凹が形成されており、前記凹に形成されている部分は前記端子の下面から前記端子の上面まで貫通している請求項1に記載の半導体装置。
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JP5122172B2 (ja) * | 2007-03-30 | 2013-01-16 | ローム株式会社 | 半導体発光装置 |
JP2015056540A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
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JP7012489B2 (ja) * | 2017-09-11 | 2022-01-28 | ローム株式会社 | 半導体装置 |
CN111341747A (zh) * | 2018-12-19 | 2020-06-26 | 恩智浦美国有限公司 | 用以改进爬电距离的引线缩短 |
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JP2006179760A (ja) | 2004-12-24 | 2006-07-06 | Yamaha Corp | 半導体パッケージ、および、これに使用するリードフレーム |
JP2008211041A (ja) | 2007-02-27 | 2008-09-11 | Rohm Co Ltd | 半導体装置、リードフレームおよび半導体装置の製造方法 |
JP2012064855A (ja) | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP2012044208A (ja) | 2011-10-21 | 2012-03-01 | Mitsubishi Electric Corp | パワー半導体モジュール |
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