WO2017086113A1 - スイッチ回路及び電源システム - Google Patents
スイッチ回路及び電源システム Download PDFInfo
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- WO2017086113A1 WO2017086113A1 PCT/JP2016/081826 JP2016081826W WO2017086113A1 WO 2017086113 A1 WO2017086113 A1 WO 2017086113A1 JP 2016081826 W JP2016081826 W JP 2016081826W WO 2017086113 A1 WO2017086113 A1 WO 2017086113A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R16/00—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for
- B60R16/02—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric constitutive elements
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0009—AC switches, i.e. delivering AC power to a load
Definitions
- the present invention relates to a switch circuit and a power supply system.
- This application claims priority based on Japanese Patent Application No. 2015-224625 filed on Nov. 17, 2015, and incorporates all the content described in the Japanese application.
- the switch circuit described in Patent Document 1 has an NPN-type bipolar transistor.
- the bipolar transistor In the bipolar transistor, the bipolar transistor is turned on or off by adjusting the voltage of the base electrode with reference to the potential of the emitter electrode. When the voltage of the base electrode with respect to the potential of the emitter electrode becomes a certain voltage or more, the bipolar transistor is turned on, and a current can flow between the collector electrode and the emitter electrode of the bipolar transistor. When the voltage of the base electrode with respect to the potential of the emitter electrode becomes less than a certain voltage, the bipolar transistor is turned off and no current flows between the collector electrode and the emitter electrode of the bipolar transistor. When the bipolar transistor is on, the resistance value between the collector electrode and the emitter electrode is smaller as the voltage of the base electrode with respect to the potential of the emitter electrode is higher.
- a switch circuit is a switch circuit for a vehicle, and includes a first electrode, a second electrode, and a control electrode, and is in accordance with a voltage between the control electrode and the second electrode. And a transistor circuit including a first main transistor that switches on / off between the first electrode and the second electrode, and is connected between both ends of the transistor circuit, and the applied voltage is equal to or lower than a first predetermined voltage. And a sub-transistor provided between the control electrode and the second electrode of the first main transistor and turned on when the first main transistor is turned off.
- a power supply system includes the above-described switch circuit and two power storage devices each having a positive electrode connected to the switch circuit.
- FIG. 1 is a schematic diagram illustrating a configuration of a power supply system in Embodiment 1.
- FIG. 6 is a schematic diagram illustrating a part of a switch circuit according to a second embodiment.
- FIG. 6 is a schematic diagram illustrating a part of a switch circuit in a third embodiment.
- FIG. 6 is a schematic diagram illustrating a part of a switch circuit in a fourth embodiment.
- FIG. 10 is a schematic diagram illustrating a part of a switch circuit according to a fifth embodiment.
- FIG. 10 is a schematic diagram illustrating a part of a switch circuit according to a sixth embodiment. It is the schematic which shows an example of the timing chart of a switch circuit.
- FIG. 10 is a schematic diagram illustrating a part of a switch circuit in a seventh embodiment.
- FIG. 10 is a schematic diagram of a power supply system in an eighth embodiment. It is explanatory drawing of operation
- the positive electrode of the power storage device is connected to the collector electrode of the bipolar transistor, the emitter electrode of the bipolar transistor is connected to one end of the load, the negative electrode of the power storage device, The end is grounded.
- the bipolar transistor when the bipolar transistor is turned on, the power storage device supplies power to the load via the bipolar transistor, and when the bipolar transistor is turned off, power supply from the power storage device to the load is stopped.
- the bipolar transistor When the bipolar transistor is turned on, the voltage of the base electrode with respect to the potential of the emitter electrode is increased by increasing the voltage of the base electrode of the bipolar transistor with respect to the ground potential. When the bipolar transistor is turned off, the voltage of the base electrode with respect to the potential of the emitter electrode is lowered by lowering the voltage of the base electrode of the bipolar transistor with respect to the ground potential.
- the wiring connecting the bipolar transistor and the load has an inductance component (hereinafter referred to as wiring inductance). While the bipolar transistor is on, a current flows through the wiring, and energy is stored in the wiring inductance.
- the wiring inductance reduces the voltage of the emitter electrode with reference to the ground potential in order to maintain the current flowing through the wiring, and maintains the voltage of the base electrode with reference to the potential of the emitter electrode at a certain voltage or higher.
- current flows through the bipolar transistor, and the energy stored in the wiring inductance is released.
- this energy becomes zero, the voltage of the base electrode with respect to the potential of the emitter electrode becomes less than a certain voltage, and the bipolar transistor is turned off.
- an object of the present application is to provide a switch circuit that generates a small amount of heat when the transistor is turned off and a power supply system including the switch circuit.
- a switch circuit is a switch circuit for a vehicle, and includes a first electrode, a second electrode, and a control electrode, and is provided between the control electrode and the second electrode.
- a transistor circuit including a first main transistor that switches on / off between the first electrode and the second electrode in accordance with a voltage, and a voltage applied to the first voltage applied to both ends of the transistor circuit.
- a first surge protection device that maintains a predetermined voltage or less, and a sub-transistor that is provided between the control electrode and the second electrode of the first main transistor and that is turned on when the first main transistor is turned off.
- the first main transistor when the voltage of the control electrode with reference to the potential of the second electrode is equal to or higher than a certain voltage, the first main transistor is turned on, and the control electrode with reference to the potential of the second electrode Is less than a certain voltage, the first main transistor is turned off.
- the first main transistor is turned off by lowering the voltage of the control electrode of the first main transistor with reference to a fixed potential, for example, the ground potential, the sub-transistor is turned on, so that the potential of the second electrode is used as a reference.
- the voltage of the control electrode is maintained below a certain voltage, and the first main transistor is maintained off.
- the turn-off when the turn-off is performed, the amount of heat generated in the first main transistor is small.
- the voltage of the first electrode with respect to the fixed potential increases due to the wiring inductance of the wiring connected to the first electrode and the second electrode, and the fixed potential is reduced.
- the voltage of the second electrode used as a reference decreases.
- the first surge protection device since the first surge protection device is connected across the transistor circuit, the voltage applied across the first main transistor is maintained at or below the first predetermined voltage.
- the transistor circuit includes a second main transistor connected to the first electrode or the second electrode of the first main transistor, and the first main transistor and The second main transistor is turned on or off at the same time.
- the second main transistor is connected to the first main transistor, and the first main transistor and the second main transistor are turned on or turned off simultaneously.
- the first main transistor and the second main transistor are FETs (Field-Effect-Transistor)
- a diode is formed between the first electrode and the second electrode for each of the first main transistor and the second main transistor.
- the first main transistor and the second main transistor can be connected so that the anodes or cathodes of the diodes of the first main transistor and the second main transistor are connected to each other. In this case, if the first main transistor and the second main transistor are off, no current flows through the diodes of the first main transistor and the second main transistor.
- a switch circuit includes a cutoff switch connected between the transistor circuit and the first surge protection device.
- the cutoff switch when the cutoff switch is OFF, no current flows through the first surge protection device.
- a large current may flow when the positive electrode of one power storage device is erroneously connected to the negative electrode of the other power storage device via a transistor circuit.
- the first main transistor and the cutoff switch are off, no large current flows through the first surge protection device 1.
- the cutoff switch is turned on before the first main transistor is turned on, and after a predetermined period has elapsed since the first main transistor is turned off, A switch control unit for turning off the cutoff switch is provided.
- the cutoff switch is turned on before the first main transistor is turned on, and the cutoff switch is turned off after a lapse of a predetermined period since the first main transistor is turned off.
- the protective device works properly.
- a switch circuit is connected between the transistor circuit and the first surge protection device, and a second surge protection device that maintains an applied voltage below a second predetermined voltage; A connection node between the first main transistor and the second main transistor, and a protection transistor connected between the connection node between the first surge protection device and the second surge protection device.
- each of the first main transistor and the second main transistor is an FET, for example, a diode is formed between the first electrode and the second electrode of each of the first main transistor and the second main transistor. ing. At this time, the anode (or cathode) of one diode is connected to the anode (or cathode) of the other diode. For this reason, when the first main transistor and the second main transistor are off, no current flows through the two diodes. When the protection transistor is off, no current flows through the first surge protection device or the second surge protection device unless the voltage across the transistor circuit is the sum of the first predetermined voltage and the second predetermined voltage. . Therefore, as long as the first main transistor and the protection transistor are off, even if the electrode of the power storage device connected to the transistor circuit is wrong, the first surge protection device and the second surge protection device are greatly affected. No current flows.
- a current flows through the first surge protection device or the second surge protection device when a voltage equal to or higher than the first predetermined voltage or the second predetermined voltage is applied across the transistor circuit. . At this time, a current flows through a diode formed in the first main transistor or the second main transistor.
- the protection transistor is turned on before the first main transistor and the second main transistor are turned on, and the first main transistor and the second main transistor are turned off. And a switch control unit that turns off the protection transistor after a predetermined period has elapsed.
- the protection transistor is turned on before the first main transistor and the second main transistor are turned on, and after a predetermined period has elapsed since the first main transistor and the second main transistor are turned off. Turn off the protection transistor. Thereby, the first surge protection device and the second surge protection device act appropriately.
- a power supply system includes the above-described switch circuit and two power storage devices each having a positive electrode connected to the switch circuit.
- one power storage device supplies power to the other power storage device via the switch circuit, and the other power storage device is charged.
- the switch circuit since the sub-transistor is provided, the amount of heat generated in the first main transistor when the first main transistor is turned on is small.
- FIG. 1 is a schematic diagram illustrating a configuration of a power supply system 100 according to the first embodiment.
- the power supply system 100 is mounted on a vehicle.
- the power supply system 100 has a switch circuit 110 with a surge protection function.
- the switch circuit 110 with a surge protection function includes paths PS1 and PS2, a first main transistor Tr1, a second main transistor Tr2, a sub-transistor Tr3, and a first surge protection device 1.
- Routes PS1 and PS2 are connected in parallel with each other.
- the first main transistor Tr1 and the second main transistor Tr2 are provided on the path PS1 and are connected in series with each other.
- the first main transistor Tr1 and the second main transistor Tr2 are N-channel FETs, and their forward directions are opposite to each other.
- the first main transistor Tr1 includes a drain electrode (first electrode), a source electrode (second electrode), and a gate electrode (control electrode).
- the first main transistor Tr1 switches on / off of the drain electrode and the source electrode according to a control voltage between the gate electrode and the source electrode.
- the forward direction of the first main transistor Tr1 is a direction from the drain electrode to the source electrode. Therefore, the drain electrode is an upstream electrode in the forward direction of the first main transistor Tr1.
- the second main transistor Tr2 has the same configuration as the first main transistor Tr1.
- the first main transistor Tr1 and the second main transistor Tr2 function as a transistor circuit.
- each of the first main transistor Tr1 and the second main transistor Tr2 a current can flow between the drain electrode and the source electrode when the voltage of the gate electrode with respect to the potential of the source electrode is a positive positive voltage or more. is there.
- each of the first main transistor Tr1 and the second main transistor Tr2 is on. The higher the voltage of the gate electrode relative to the potential of the source electrode, the smaller the resistance value between the drain electrode and the source electrode.
- when the voltage of the gate electrode with respect to the potential of the source electrode is less than a certain positive voltage, current does not flow between the drain electrode and the source electrode. Absent.
- each of the first main transistor Tr1 and the second main transistor Tr2 is off.
- the constant voltage of the first main transistor Tr1 is substantially equal to the constant voltage of the second main transistor Tr2.
- the source electrodes of the first main transistor Tr1 and the second main transistor Tr2 are connected to each other, and the gate electrodes of the first main transistor Tr1 and the second main transistor Tr2 are connected to the drive circuit 2 via gate resistors R1 and R2, respectively.
- a common output terminal 21 is connected.
- Each of the gate resistors R1 and R2 can suppress, for example, oscillation of a voltage applied to the gate electrodes of the first main transistor Tr1 and the second main transistor Tr2.
- diodes D1 and D2 are connected in parallel to the first main transistor Tr1 and the second main transistor Tr2, respectively.
- the forward direction of the diode D1 is opposite to the forward direction of the first main transistor Tr1, and the forward direction of the diode D2 is opposite to the forward direction of the second main transistor Tr2.
- the first main transistor Tr1, the second main transistor Tr2, and the diodes D1 and D2 constitute a so-called bidirectional switch.
- Each of the diodes D1 and D2 is a parasitic diode of the first main transistor Tr1 and the second main transistor Tr2.
- the cathodes of the diodes D1 and D2 are connected to the drain electrodes of the first main transistor Tr1 and the second main transistor Tr2, and the anodes of the diodes D1 and D2 are connected to the source electrodes of the first main transistor Tr1 and the second main transistor Tr2. Has been. Accordingly, since the anodes of the diodes D1 and D2 are connected to each other, no current flows through the diodes D1 and D2 when the first main transistor Tr1 and the second main transistor Tr2 are off.
- the sub-transistor Tr3 is an NPN bipolar transistor.
- the sub-transistor Tr3 is provided between the gate electrode and the source electrode of each of the first main transistor Tr1 and the second main transistor Tr2.
- the collector electrode of the sub-transistor Tr3 is connected to the gate electrodes of the first main transistor Tr1 and the second main transistor Tr2 via the gate resistors R1 and R2, respectively, and the emitter electrode of the sub-transistor Tr3 is the first electrode. It is connected to the source electrodes of the main transistor Tr1 and the second main transistor Tr2.
- a resistor R3 is provided between the base electrode and the emitter electrode of the sub-transistor Tr3. Further, the base electrode of the sub-transistor Tr3 is grounded via the resistor R4 and the diode D3.
- the forward direction of the diode D3 is a direction toward the base electrode of the sub-transistor Tr3. Accordingly, the base electrode of the sub-transistor Tr3 is connected to one end of the resistor R4, the cathode of the diode D3 is connected to the other end of the resistor R4, and the anode of the diode D3 is grounded.
- the sub-transistor Tr3 when the voltage of the base electrode with reference to the potential of the emitter electrode is a positive constant voltage or more, a current can flow between the collector electrode and the emitter electrode. At this time, the sub-transistor Tr3 is on. The higher the voltage of the base electrode relative to the potential of the emitter electrode, the smaller the resistance value between the collector electrode and the emitter electrode. Further, in the sub-transistor Tr3, when the voltage of the base electrode with respect to the potential of the emitter electrode is less than a positive constant voltage, no current flows between the collector electrode and the emitter electrode. At this time, the sub-transistor Tr3 is off.
- the sub-transistor Tr3 is turned on or off according to the voltage of the base electrode with reference to the potential of the emitter electrode.
- the constant voltage related to the turn-on and turn-off of the sub-transistor Tr3 is sufficiently lower than the constant voltage related to the turn-on and turn-off of the first main transistor Tr1, and is sufficiently lower than the constant voltage related to the turn-on and turn-off of the second main transistor Tr2. .
- the sub-transistor Tr3 is turned on when the first main transistor Tr1 and the second main transistor Tr2 are turned off. More specifically, the sub-transistor Tr3 is turned on from the start to the completion of the turn-off of the first main transistor Tr1 and the second main transistor Tr2. The turn-on speed of the sub-transistor Tr3 is faster than the turn-off speed of the first main transistor Tr1 and the second main transistor Tr2 when the sub-transistor Tr3 is not provided.
- the drive circuit 2 operates by receiving a power supply voltage from the DC power supply E1. For example, the drive circuit 2 receives a switch signal from the outside and outputs a control voltage to the gate electrodes of the first main transistor Tr1 and the second main transistor Tr2. As a result, the first main transistor Tr1 and the second main transistor Tr2 are switched on / off.
- the drive circuit 2 is grounded.
- the drive circuit 2 raises the voltage of the gate electrode with respect to the potential of the source electrode by raising the voltage of the gate electrode with respect to the ground potential for each of the first main transistor Tr1 and the second main transistor Tr2. .
- the first main transistor Tr1 and the second main transistor Tr2 are turned on.
- the drive circuit 2 reduces the voltage of the gate electrode with respect to the ground potential for each of the first main transistor Tr1 and the second main transistor Tr2, thereby reducing the voltage of the gate electrode with respect to the potential of the source electrode. Reduce.
- the first main transistor Tr1 and the second main transistor Tr2 are turned off.
- the drive circuit 2 simultaneously turns on and off the first main transistor Tr1 and the second main transistor Tr2.
- “simultaneously” does not only mean that the turn-on and turn-off timings coincide completely, but also means that the turn-on and turn-off timings substantially coincide.
- the first surge protection device 1 is provided on the path PS2, and is connected in parallel to the series circuit of the first main transistor Tr1 and the second main transistor Tr2.
- the first surge protection device 1 is a so-called surge absorber, which is an element that allows a current to flow when a voltage applied to the first surge protection device 1 exceeds a predetermined value (hereinafter also referred to as a breakdown voltage).
- a surge absorber silicon surge absorber
- the breakdown voltage of the first surge protection device 1 is, for example, about 18 [V].
- the voltage across the first surge protection device 1 is maintained below the breakdown voltage.
- the breakdown voltage is higher than the difference value between the terminal voltages of the first power storage device 31 and the second power storage device 32.
- the first surge protection device 1 there is a configuration in which two Zener diodes are connected in series.
- the cathode of one Zener diode is connected to the cathode of the other Zener diode, or the anode of one Zener diode is connected to the anode of the other Zener diode.
- the breakdown voltages of the two Zener diodes are substantially the same.
- the positive electrode of the first power storage device 31 is connected to the drain electrode of the first main transistor Tr1
- the positive electrode of the second power storage device 32 is connected to the drain electrode of the second main transistor Tr2.
- the negative electrodes of the first power storage device 31 and the second power storage device 32 are both grounded.
- the voltage of the 1st electrical storage apparatus 31 and the 2nd electrical storage apparatus 32 is about 14 [V] in a full charge state, for example.
- the first power storage device 31 and the second power storage device 32 are also mounted on the vehicle.
- the drain electrode of the first main transistor Tr1 is connected to the connector 41, and one end of the wiring L1 is connected to the connector 41.
- the other end of the wiring L1 is connected to the positive electrode of the first power storage device 31.
- the drain electrode of the second main transistor Tr2 is connected to the connector 42, and one end of the wiring L2 is connected to the connector 42.
- the other end of the wiring L ⁇ b> 2 is connected to the positive electrode of the second power storage device 32.
- the wirings L1 and L2 are wire harnesses, for example.
- the wiring resistance and wiring inductance of the wirings L1 and L2 are equivalently shown.
- the wiring resistance is a resistance component of the wiring L1 or the wiring L2
- the wiring inductance is an inductance component of the wiring L1 or the wiring L2.
- the vehicle is provided with a large number of loads (not shown).
- these loads are connected to the connector 41 or the connector 42. These loads receive the power supply voltage from at least one of the first power storage device 31 and the second power storage device 32.
- the multiple loads described above receive the power supply voltage from one of the first power storage device 31 or the second power storage device 32. Further, when the first main transistor Tr1 and the second main transistor Tr2 are on, power is supplied from one power storage device of the first power storage device 31 and the second power storage device 32 to the other power storage device, and the other power storage device is stored. The device is charged. When the first main transistor Tr1 and the second main transistor Tr2 are off, power is supplied from the first power storage device 31 to the load connected to the connector 41, and the second is connected to the load connected to the connector 42. Electric power is supplied from the power storage device 32.
- FIG. 2 is an explanatory diagram of the operation of the switch circuit 110 in which the first surge protection device 1 and the sub-transistor Tr3 are not provided.
- FIG. 2 shows the transition of the voltages of the gate electrode and the source electrode of the first main transistor Tr1 and the second main transistor Tr2, and the transition of the voltage between the gate and the source of the first main transistor Tr1 and the second main transistor Tr2.
- the transition of the current flowing through the first main transistor Tr1 and the second main transistor Tr2 is shown. In these transitions, time is shown on the horizontal axis.
- the voltages of the gate electrode and the source electrode shown in FIG. 2 are voltages based on the ground potential.
- the voltage between the gate and the source is a gate voltage based on the potential of the source electrode.
- the drive circuit 2 turns on the first main transistor Tr1 and the second main transistor Tr2 by adjusting the voltage of the gate electrode to a preset voltage.
- the voltage of the source electrode substantially matches the terminal voltage of the first power storage device 31 with the ground potential as a reference.
- the resistance values of the first main transistor Tr1 and the second main transistor Tr2 are small, and the voltage is passed through the wiring L1, the first main transistor Tr1, the second main transistor Tr2, and the wiring L2.
- current flows from the first power storage device 31 to the second power storage device 32. While the first main transistor Tr1 and the second main transistor Tr2 are on, energy is stored in the wiring inductances of the wirings L1 and L2.
- the drive circuit 2 adjusts the voltage of the gate electrode from the set voltage to, for example, zero [V] in order to turn off the first main transistor Tr1 and the second main transistor Tr2.
- the wiring inductance of the wiring L1 increases the voltage of the connector 41 with respect to the ground potential in order to maintain the magnitude of the current flowing through the wiring L1.
- the wiring inductance of the wiring L2 maintains the magnitude of the current flowing through the wiring L2, so that the connector 42 with reference to the ground potential is used. Reduce the voltage. Thereby, the voltage of the source electrode also decreases.
- the wiring inductance of the wiring L2 decreases the voltage of the source electrode until the voltage between the gate and the source becomes a positive constant voltage or more. As a result, the first main transistor Tr1 and the second main transistor Tr2 are kept on. As a result, current continues to flow through the first main transistor Tr1 and the second main transistor Tr2, and energy stored in the wiring inductances of the wirings L1 and L2 is released. Until the energy stored in the wiring inductance of the wiring L2 becomes zero, the voltage between the gate and the source is maintained at a constant voltage, and the current flowing through the first main transistor Tr1 and the second main transistor Tr2 has a constant slope. descend.
- FIG. 3 is an explanatory diagram of the operation of the switch circuit 110 provided with the first surge protection device 1 and the sub-transistor Tr3.
- FIG. 3 as in FIG. 2, the transition of the voltages of the gate electrode and the source electrode of the first main transistor Tr1 and the second main transistor Tr2, and the gate and source of the first main transistor Tr1 and the second main transistor Tr2 are shown. The transition of the voltage between them and the transition of the current flowing through the first main transistor Tr1 and the second main transistor Tr2 are shown.
- the drive circuit 2 adjusts the voltage of the gate electrode to the set voltage, thereby setting the first main transistor Tr1 and the second main transistor Tr2 Turned on. While the first main transistor Tr1 and the second main transistor Tr2 are on, energy is stored in the wiring inductances of the wirings L1 and L2. When the first main transistor Tr1 and the second main transistor Tr2 are on, the voltage of the emitter electrode of the sub-transistor Tr3 with respect to the ground potential is the terminal voltage of the first power storage device 31 with respect to the ground potential. They are approximately the same and are positive voltages. Therefore, no current flows through the resistor R3 due to the action of the diode D3.
- the voltage of the base electrode with reference to the potential of the emitter electrode is zero [V], which is less than a positive constant voltage. Therefore, when the first main transistor Tr1 and the second main transistor Tr2 are on, the sub-transistor Tr3 is off.
- the drive circuit 2 adjusts the voltage of the gate electrode from, for example, zero [V] to turn off the first main transistor Tr1 and the second main transistor Tr2, the wiring inductance of the wiring L1 is equal to the ground potential. And the wiring inductance of the wiring L2 lowers the voltage of the connector 42 based on the ground potential and lowers the voltage of the source electrode.
- the voltage of the emitter electrode of the sub-transistor Tr3 with respect to the ground potential is lowered.
- the voltage of the emitter electrode of the sub-transistor Tr3 with respect to the ground potential becomes a negative voltage and the absolute value of this voltage exceeds a certain value, the current flows in the order of the diode D3 and the resistors R4 and R3. A voltage drop occurs at R3.
- a voltage difference is generated between the emitter electrode and the base electrode of the sub-transistor Tr3.
- the voltage of the emitter electrode of the sub-transistor Tr3 with respect to the ground potential decreases, the current flowing through the resistor R3 increases, and the width of the voltage drop of the resistor R3 increases.
- the voltage of the base electrode rises with reference to the potential of the emitter electrode.
- the constant voltage related to the turn-off of the sub-transistor Tr3 is sufficiently lower than the constant voltage related to the turn-off of the first main transistor Tr1 and the second main transistor Tr2. For this reason, when the voltage of the source electrode decreases, first, the sub-transistor Tr3 is turned on. Then, current flows in the order of the sub-transistor Tr3, the diode D2, and the wiring L2 from the output terminal 21 of the drive circuit 2, and energy stored in the wiring inductance of the wiring L2 is released. While the energy stored in the wiring inductance of the wiring L2 is released, the voltage of the base electrode with respect to the potential of the emitter electrode is low in the sub-transistor Tr3.
- the resistance value between the collector and the emitter in the sub-transistor Tr3 Is big.
- the power consumed by the sub-transistor Tr3 is small and the temperature rise of the sub-transistor Tr3 is small.
- the first main transistor Tr1 and the second main transistor Tr2 are kept off, and the first main transistor Tr1 and the second main transistor Tr2 are turned off.
- the flowing current is zero [A].
- the voltage of the source electrode becomes zero [V]
- the voltage between the gate and the source becomes zero [V].
- the first main transistor Tr1 and the second main transistor Tr2 are not turned on, and the first main transistor Tr1 and the second main transistor Tr2 are kept off.
- the voltage of the source electrode becomes zero [V]
- the voltage of the emitter electrode of the sub-transistor Tr3 with reference to the ground potential becomes zero [V], so that the sub-transistor Tr3 is turned off.
- FIG. 4 is another explanatory diagram of the operation of the switch circuit 110 provided with the first surge protection device 1 and the sub-transistor Tr3.
- FIG. 4 shows the transition of the voltage between the gate and the source shown in FIG.
- FIG. 4 further shows the transition of the voltage between the connectors 41 and 42 and the transition of the current flowing through the first surge protection device 1. Even in these transitions, time is shown on the horizontal axis.
- the voltage between the connectors 41 and 42 is the voltage of the connector 41 based on the potential of the connector 42.
- the voltage between the connectors 41 and 42 is substantially zero [V].
- the voltage between the gate and the source is lowered and the first main transistor Tr1 and the second main transistor Tr2 are turned off, as described above, the voltage of the connector 41 with respect to the ground potential rises, and the ground potential becomes the reference.
- the voltage of the connected connector 42 decreases. For this reason, the voltage between the connectors 41 and 42 increases.
- the voltage between the connectors 41 and 42 reaches the breakdown voltage of the first surge protection device 1, a current flows in the order of the wiring L1, the first surge protection device 1, and the wiring L2, and is stored in the wiring inductance of the wirings L1 and L2. Energy is consumed.
- the voltage between the connectors 41 and 42 is maintained at the breakdown voltage, and the current flowing through the first surge protection device 1 decreases with a constant slope.
- the voltage between the connectors 41 and 42 is obtained by subtracting the terminal voltage of the second power storage device 32 from the terminal voltage of the first power storage device 31. Is maintained at the voltage calculated by
- the drive circuit 2 turns on the first main transistor Tr1 and the second main transistor Tr2 and current flows from the connector 42 to the connector 41, the voltage of the source electrode is that of the second power storage device 32 with respect to the ground potential. It almost matches the terminal voltage. While the first main transistor Tr1 and the second main transistor Tr2 are on, energy is stored in the wiring inductances of the wirings L1 and L2.
- the drive circuit 2 adjusts the voltage of the gate electrode from, for example, zero [V] to turn off the first main transistor Tr1 and the second main transistor Tr2, the wiring inductance of the wiring L2 flows to the wiring L2.
- the voltage of the connector 42 with respect to the ground potential is increased.
- the wiring inductance of the wiring L1 maintains the magnitude of the current flowing through the wiring L1, and thus the connector 41 with the ground potential as a reference. Reduce the voltage. Thereby, the voltage of the source electrode also decreases.
- the wiring inductance of the wiring L1 lowers the voltage of the source electrode until the voltage between the gate and the source becomes a positive constant voltage or more. As a result, the first main transistor Tr1 and the second main transistor Tr2 are kept on. As a result, current continues to flow through the first main transistor Tr1 and the second main transistor Tr2, and energy stored in the wiring inductances of the wirings L1 and L2 is released. Until the energy stored in the wiring inductance of the wiring L1 becomes zero, the voltage between the gate and the source is maintained at a constant voltage, and the current flowing through the first main transistor Tr1 and the second main transistor Tr2 has a constant slope. descend. When the energy stored in the wiring inductance of the wiring L1 becomes zero, the voltage of the source electrode becomes zero [V]. As a result, the gate-source voltage becomes zero [V], and the first main transistor Tr1 and the second main transistor Tr2 are turned off.
- the voltage of the emitter electrode of the sub-transistor Tr3 with respect to the ground potential is substantially equal to the terminal voltage of the second power storage device 32 with respect to the ground potential.
- the voltage is positive. Therefore, no current flows through the resistor R3, and in the sub-transistor Tr3, the voltage of the base electrode with reference to the potential of the emitter electrode is zero [V], which is less than a positive constant voltage.
- the sub-transistor Tr3 is off.
- the drive circuit 2 adjusts the voltage of the gate electrode from the set voltage to, for example, zero [V] in order to turn off the first main transistor Tr1 and the second main transistor Tr2, the wiring inductance of the wiring L2 is equal to the ground potential. And the wiring inductance of the wiring L1 lowers the voltage of the connector 41 based on the ground potential and lowers the voltage of the source electrode.
- the voltage of the source electrode decreases, the voltage of the emitter electrode of the subtransistor Tr3 with respect to the ground potential decreases, and the subtransistor Tr3 is turned on.
- the first main transistor Tr1 and the second main transistor Tr2 are kept off. After the energy stored in the wiring inductance of the wiring L1 becomes zero, the gate-source voltage becomes zero [V], and the first main transistor Tr1 and the second main transistor Tr2 are kept off. Further, when the voltage of the source electrode becomes zero [V], the sub-transistor Tr3 is turned off.
- the absolute value of the voltage between the connectors 41 and 42 is maintained at the breakdown voltage, and the current flowing through the first surge protection device 1 has a constant slope. descend.
- the absolute value of the voltage between the connectors 41 and 42 is the terminal voltage of the first power storage device 31 from the terminal voltage of the second power storage device 32. The voltage calculated by subtraction is maintained.
- the driving circuit 2 turns off the first main transistor Tr1 and the second main transistor Tr2, the sub-transistor Tr3 is turned on, so that the voltage between the gate and the source is maintained below a certain voltage, and the first main transistor Tr1 is turned on.
- the transistor Tr1 and the second main transistor Tr2 are kept off.
- the first surge protection device 1 is connected between the drain electrodes of the first main transistor Tr1 and the second main transistor Tr2, it is applied between both ends of the first main transistor Tr1 and the second main transistor Tr2. The voltage is maintained below the breakdown voltage.
- FIG. 5 is a schematic diagram showing a part of the switch circuit 110 according to the second embodiment.
- the first main transistor Tr1 and the first surge protection device 1 are provided on the paths PS1 and PS2, respectively, and are connected in parallel to each other.
- the first surge protection device 1 does not need to be compatible with both directions, and may be a one-way surge protection device.
- the voltage of the first surge protection device 1 exceeds the breakdown voltage
- the first surge protection device 1 is turned on.
- the unidirectional first surge protection device 1 may be connected in parallel to each of the first main transistor Tr1 and the second main transistor Tr2.
- the breakdown voltage exceeds the terminal voltage of the first power storage device 31.
- the first main transistor Tr1 functions as a transistor circuit.
- the first surge protection device 1 has a Zener diode, and the cathode and anode of the Zener diode are connected to the drain electrode and the source electrode of the first main transistor Tr1.
- the first surge protection device 1 when the cathode voltage relative to the anode potential becomes the breakdown voltage, the current flows from the cathode to the anode, and the voltage between the drain and the source of the first main transistor Tr1 is less than the breakdown voltage.
- the drain electrode of the first main transistor Tr1 is connected to the connector 41, and the source electrode of the first main transistor Tr1 is connected to the connector 42 and the emitter electrode of the sub-transistor Tr3.
- the switch circuit 110 according to the second embodiment configured as described above has the same effect as the switch circuit 110 according to the first embodiment.
- no current flows from the connector 42 to the connector 41.
- the second main transistor Tr2 and the resistor R2 are not provided.
- the number of first main transistors Tr1 may be two or more.
- the differences of the third embodiment from the second embodiment will be described. Since the other configuration except the configuration described later is the same as that of the second embodiment, the same reference numerals are given and detailed description thereof is omitted.
- FIG. 6 is a schematic diagram illustrating a part of the switch circuit 110 according to the third embodiment.
- a plurality of paths PS1 are provided, and each path PS1 is connected in parallel to the path PS2.
- a first main transistor Tr1 is provided on each path PS1. That is, the plurality of first main transistors Tr1 are connected in parallel to each other.
- the first surge protection device 1 is connected in parallel to the plurality of first main transistors Tr1.
- the number of first surge protection devices 1 is smaller than the number of first main transistors Tr1, for example, and is one in the illustration of FIG.
- the plurality of first main transistors Tr1 function as transistor circuits.
- the output terminal 21 of the drive circuit 2 is connected to the gate electrode of each of the plurality of first main transistors Tr1 via the resistor R1.
- the drive circuit 2 simultaneously turns on and turns off the plurality of first main transistors Tr1.
- “simultaneously” does not only mean that the turn-on and turn-off timings coincide completely, but also means that the turn-on and turn-off timings substantially coincide.
- a diode D1 is connected between the drain electrode and the source electrode of each of the plurality of first main transistors Tr1.
- the switch circuit 110 according to the third embodiment configured as described above has the same effect as the switch circuit 110 according to the second embodiment.
- the first main transistor Tr1 is not limited to an N-channel FET, but may be an NPN bipolar transistor or an IGBT (Insulated Gate Bipolar Transistor).
- the number of series circuits of the first main transistor Tr1 and the second main transistor Tr2 may be two or more.
- the differences of the fourth embodiment from the first embodiment will be described. Since the other configuration except the configuration to be described later is the same as that of the first embodiment, the same reference numerals are given and detailed description thereof is omitted.
- FIG. 7 is a schematic diagram illustrating a part of the switch circuit 110 according to the fourth embodiment.
- a plurality of paths PS1 are provided, and each path PS1 is connected in parallel to the path PS2.
- a first main transistor Tr1 and a second main transistor Tr2 connected in series with each other are provided on each path PS1. That is, a plurality of series circuits including the first main transistor Tr1 and the second main transistor Tr2 are connected in parallel to each other.
- the first surge protection device 1 is connected in parallel to the plurality of series circuits.
- the number of the first surge protection devices 1 is smaller than the number of the series circuits, and is one in the illustration of FIG.
- the plurality of first main transistors Tr1 and the plurality of second main transistors Tr2 function as transistor circuits.
- a diode D1 is connected between the drain electrode and the source electrode of each first main transistor Tr1.
- a diode D2 is connected between the drain electrode and the source electrode of each second main transistor Tr2.
- the source electrode of each of the plurality of first main transistors Tr1 is connected to the emitter electrode of the sub-transistor Tr3.
- the output terminal 21 of the drive circuit 2 is connected to the gate electrode of each of the plurality of first main transistors Tr1 via the resistor R1, and to the gate electrode of each of the plurality of second main transistors Tr2 via the resistor R2. It is connected.
- the drive circuit 2 simultaneously turns on and turns off all the first main transistors Tr1 and all the second main transistors Tr2.
- “simultaneously” does not only mean that the turn-on and turn-off timings coincide completely, but also means that the turn-on and turn-off timings substantially coincide.
- the switch circuit 110 according to the fourth embodiment configured as described above has the same effect as the switch circuit 110 according to the first embodiment.
- the number of each of the first main transistor Tr1 and the second main transistor Tr2 is not limited to one.
- the differences of the fifth embodiment from the first embodiment will be described. Since the other configuration except the configuration to be described later is the same as that of the first embodiment, the same reference numerals are given and detailed description thereof is omitted.
- FIG. 8 is a schematic diagram illustrating a part of the switch circuit 110 according to the fifth embodiment.
- the switch circuit 110 includes a plurality of first main transistors Tr1 and a plurality of second main transistors Tr2.
- a plurality of first main transistors Tr1 are connected in parallel, and a plurality of second main transistors Tr2 are connected in parallel.
- a diode D1 is connected between the drain electrode and the source electrode of each first main transistor Tr1.
- a diode D2 is connected between the drain electrode and the source electrode of each second main transistor Tr2.
- the plurality of first main transistors Tr1 and the plurality of second main transistors Tr2 function as transistor circuits.
- a first surge protection device 1a is connected between the drain electrode and the source electrode of the first main transistor Tr1.
- the first surge protection device 1a has a Zener diode, and the cathode and the anode of the Zener diode are connected to the drain electrode and the source electrode of the first main transistor Tr1, respectively.
- the first surge protection device 1b is connected between the drain electrode and the source electrode of the second main transistor Tr2.
- the first surge protection device 1b also has a Zener diode, and the cathode and anode of the Zener diode are connected to the drain electrode and the source electrode of the second main transistor Tr2.
- Zener diode of the first surge protection device 1a when the cathode voltage relative to the anode potential becomes the breakdown voltage, a current flows from the cathode to the anode.
- a current flows from the anode of the Zener diode of the first surge protection device 1a through at least one of the plurality of diodes D2 and the first surge protection device 1b.
- the Zener diode of the first surge protection device 1b when the cathode voltage with respect to the anode potential becomes the breakdown voltage, a current flows from the cathode to the anode.
- the breakdown voltage of each of the first surge protection devices 1a and 1b exceeds the difference value between the terminal voltages of the first power storage device 31 and the second power storage device 32.
- the drive circuit 2 simultaneously turns on and turns off all the first main transistors Tr1 and all the second main transistors Tr2.
- “simultaneously” does not only mean that the turn-on and turn-off timings coincide completely, but also means that the turn-on and turn-off timings substantially coincide.
- the switch circuit 110 according to the fifth embodiment configured as described above has the same effects as the switch circuit 110 according to the first embodiment.
- the number of first main transistors Tr1 may be the same as or different from the number of second main transistors Tr2.
- the number of first main transistors Tr1 may be 1 and the number of second main transistors Tr2 may be 2 or more. Further, the number of second main transistors Tr2 may be 1, and the number of first main transistors Tr1 may be 2 or more.
- the worker may erroneously connect the first power storage device 31 and the second power storage device 32.
- the positive electrode and the negative electrode of the second power storage device 32 may be connected in reverse. That is, the negative electrode of the second power storage device 32 is connected to the connector 42, and the positive electrode of the second power storage device 32 is grounded.
- a reverse connection state such a state in which the first power storage device 31 or the second power storage device 32 is connected with the positive electrode and the negative electrode reversed is also referred to as a reverse connection state.
- the sum of the voltage of the first power storage device 31 and the voltage of the second power storage device 32 is applied to the first surge protection device 1.
- the voltage of the first power storage device 31 and the second power storage device 32 is 14 [V]
- a voltage of 28 [V] is applied to the first surge protection device 1.
- the breakdown voltage of the first surge protection device 1 is set to be larger than this sum, it is possible to prevent a current from flowing during the operation even if the second power storage device 32 is erroneously connected as described above.
- increasing the breakdown voltage of the first surge protection device 1 is not preferable because it increases the voltage generated in the first main transistor Tr1 and the second main transistor Tr2.
- the sixth embodiment it is intended to prevent a current due to an incorrect connection while suppressing an increase in the breakdown voltage of the first surge protection device 1.
- the points of the sixth embodiment different from the first embodiment will be described. Since the other configuration except the configuration to be described later is the same as that of the first embodiment, the same reference numerals are given and detailed description thereof is omitted.
- FIG. 9 is a schematic diagram illustrating a part of the switch circuit 110 according to the sixth embodiment.
- the switch circuit 110 with a surge protection function in FIG. 9 further includes a cutoff switch S1 that is a bidirectional switch, as compared with the first embodiment.
- the cutoff switch S1 is connected in series with the first surge protection device 1 in the path PS2. That is, the series circuit of the first main transistor Tr1 and the second main transistor Tr2 is connected in parallel to the series circuit of the first surge protection device 1 and the cutoff switch S1.
- the first main transistor Tr1 and the second main transistor Tr2 function as transistor circuits.
- the cutoff switch S1 includes cutoff transistors Tr4 and Tr5.
- the cutoff transistors Tr4 and Tr5 are connected in series with each other and their forward directions are opposite to each other.
- the cutoff transistors Tr4 and Tr5 are N channel type FETs. Further, diodes D4 and D5 are connected in parallel to the cutoff transistors Tr4 and Tr5, respectively.
- the forward directions of the cutoff transistor Tr4 and the diode D4 are opposite to each other, and the forward directions of the cutoff transistor Tr5 and the diode D5 are opposite to each other.
- the drain electrode of the cutoff transistor Tr4 is connected to one end of the first surge protection device 1 on the connector 42 side, and the source electrode of the cutoff transistor Tr4 is connected to the source electrode of the cutoff transistor Tr5.
- the drain electrode of the cutoff transistor Tr5 is connected to the drain electrode of the second main transistor Tr2.
- the diodes D4 and D5 are parasitic diodes of the cutoff transistors Tr4 and Tr5, respectively.
- the diode D4 the cathode is connected to the drain electrode of the cutoff transistor Tr4, and the anode is connected to the source electrode of the cutoff transistor Tr4.
- the diode D5 the cathode is connected to the drain electrode of the cutoff transistor Tr5, and the anode is connected to the source electrode of the cutoff transistor Tr5.
- the drain electrode of the cutoff transistor Tr4 may be connected to the drain electrode of the cutoff transistor Tr5.
- the source electrode of the cutoff transistor Tr4 is connected to one end on the connector 42 side of the first surge protection device 1
- the source electrode of the cutoff transistor Tr5 is connected to the drain electrode of the second main transistor Tr2.
- the cutoff switch S1 should just be connected to the 1st surge protection device 1 in series. For this reason, the cutoff switch S1 may be connected to one end of the first surge protection device 1 on the connector 41 side.
- each of the cutoff transistors Tr4 and Tr5 is on when the voltage of the gate electrode with reference to the potential of the source electrode is a positive constant voltage or more.
- each of the cutoff transistors Tr4 and Tr5 is turned off when the voltage of the gate electrode based on the potential of the source electrode is less than a positive constant voltage, like the first main transistor Tr1 and the second main transistor Tr2. .
- the constant voltage of the cutoff transistor Tr4 is substantially equal to the constant voltage of the cutoff transistor Tr5.
- the switch circuit 110 further includes a switch control unit 6, and the switch control unit 6 is connected to the gate electrodes of the cutoff transistors Tr4 and Tr5.
- the switch control unit 6 adjusts the voltage of the gate electrode with respect to the potential of the source electrode for each of the cutoff transistors Tr4 and Tr5. As a result, the switch control unit 6 turns on and off the cutoff transistors Tr4 and Tr5.
- the switch controller 6 turns on the cutoff switch S1 by simultaneously turning on the cutoff transistors Tr4 and Tr5, and turns off the cutoff switch S1 by simultaneously turning off the cutoff transistors Tr4 and Tr5.
- “simultaneously” does not only mean that the turn-on and turn-off timings coincide completely, but also means that the turn-on and turn-off timings substantially coincide.
- the first surge protection device 1 having a smaller breakdown voltage can be used.
- the breakdown voltage of the first surge protection device 1 may be the same breakdown voltage as in the first embodiment.
- the breakdown voltage of each of the first surge protection device 1 and the second surge protection device 11 exceeds the difference value between the first power storage device 31 and the second power storage device 32.
- the voltage applied to the series circuit of the first main transistor Tr1 and the second main transistor Tr2 is the cutoff switch S1 and the first switch. It is also applied to the series circuit of the surge protection device 1. At this time, the voltage applied to the series circuit of the first main transistor Tr1 and the second main transistor Tr2 is divided into the cutoff switch S1 and the first surge protection device 1. Therefore, since the voltage applied to the first surge protection device 1 is low, the first surge protection device 1 or the cutoff switch S1 is not burned out.
- the switch control unit 6 turns on the cutoff switch S1 before turning off the first main transistor Tr1 and the second main transistor Tr2. That is, the first main transistor Tr1 and the second main transistor Tr2 are turned off with the cutoff switch S1 turned on. Thereby, when the first main transistor Tr1 and the second main transistor Tr2 are turned off, the first surge protection device 1 functions appropriately.
- the cut-off switch S1 may be always turned on thereafter, or may be turned off in response to the ignition of the vehicle being turned off. However, in order to keep the cutoff switch S1 on, the switch controller 6 needs to output a control voltage. Here, the cutoff switch S1 is normally off. Electric power can be consumed by the output of the control voltage. Therefore, in a state where the first main transistor Tr1 and the second main transistor Tr2 are turned off, the cutoff switch S1 may also be turned off. That is, the switch controller 6 may turn off the cutoff switch S1 after a predetermined period T1 after the first main transistor Tr1 and the second main transistor Tr2 are turned off.
- FIG. 10 shows an example of a timing chart of the first main transistor Tr1 and the cutoff switch S1.
- the predetermined period T1 may be set as follows. That is, a period sufficient for the current flowing through the first surge protection device 1 to reach zero may be adopted as the predetermined period T1.
- the switch control unit 6 may turn off the cutoff switch S1 after the current flowing through the first surge protection device 1 reaches zero. About this period, it can obtain
- the switch circuit 110 according to the sixth embodiment configured as described above has the same effect as the switch circuit 110 according to the first embodiment.
- Each of the cutoff transistors Tr4 and Tr5 is not limited to an N channel type FET, and may be a P channel type FET. In this case, each of the cutoff transistors Tr4 and Tr5 is on when the voltage of the gate electrode relative to the potential of the source electrode is less than a constant negative voltage. Further, each of the cutoff transistors Tr4 and Tr5 is off when the voltage of the gate electrode with respect to the potential of the source electrode is equal to or higher than a certain negative voltage. Further, the configuration of the cutoff switch S1 may be a configuration using a bipolar transistor or a relay contact or the like instead of the cutoff transistors Tr4 and Tr5.
- FIG. 11 is a schematic diagram illustrating a part of the switch circuit 110 according to the seventh embodiment.
- the points of the seventh embodiment different from the first embodiment will be described. Since the other configuration except the configuration to be described later is the same as that of the first embodiment, the same reference numerals are given and detailed description thereof is omitted.
- the 11 is further provided with the second surge protection device 11 as compared with the first embodiment.
- the second surge protection device 11 is connected in series with the first surge protection device 1 in the path PS2. That is, the series circuit of the first surge protection device 1 and the second surge protection device 11 is connected in parallel to the series circuit of the first main transistor Tr1 and the second main transistor Tr2.
- the first main transistor Tr1 and the second main transistor Tr2 function as transistor circuits.
- the 11 is further provided with a protection transistor Tr6 and a diode D6 as compared with the first embodiment.
- the protection transistor Tr6 is connected between a connection node P1 between the first main transistor Tr1 and the second main transistor Tr2 and a connection node P2 between the first surge protection device 1 and the second surge protection device 11.
- a diode D6 is connected in parallel to the protection transistor Tr6.
- the forward direction of the diode D6 is opposite to the forward direction of the protection transistor Tr6. In the illustration of FIG. 11, the forward direction of the protection transistor Tr6 is a direction from the connection point P2 toward the connection point P1.
- the protection transistor Tr6 is an N-channel FET.
- the first main transistor Tr1, the protection transistor Tr6, and the diodes D1, D6 form a bidirectional switch
- the second main transistor Tr2, the protection transistor Tr6, and the diodes D2, D6 form a bidirectional switch.
- the diode D6 is a parasitic diode of the protection transistor Tr6.
- the source electrode of the protection transistor Tr6 is connected to the source electrode of each of the first main transistor Tr1 and the second main transistor Tr2, and the drain electrode of the protection transistor Tr6 is one end on the connector 42 side of the first surge protection device 1. And one end of the second surge protection device 11. The other end of the second surge protection device 11 is connected to the drain electrode of the second main transistor Tr2.
- the diode D6 the cathode is connected to the drain of the protection transistor Tr6, and the anode is connected to the source of the protection transistor Tr6.
- the second surge protection device 11 is configured in the same manner as the first surge protection device 1.
- the protection transistor Tr6 is on when the voltage of the gate electrode with respect to the potential of the source electrode is equal to or higher than a positive constant voltage. Similarly to the first main transistor Tr1 and the second main transistor Tr2, the protection transistor Tr6 is off when the voltage of the gate electrode with respect to the potential of the source electrode is less than a certain positive voltage.
- the switch circuit 110 further includes a switch control unit 61, and the switch control unit 61 is connected to the gate electrode of the protection transistor Tr6.
- the switch control unit 61 adjusts the voltage of the gate electrode with respect to the potential of the source electrode for the protection transistor Tr6. As a result, the switch control unit 61 turns on and off the protection transistor Tr6.
- the first power storage device 31 or the second power storage device 32 is connected in a state where the first main transistor Tr1, the second main transistor Tr2, and the protection transistor Tr6 are off.
- the voltage applied to the series circuit of the first main transistor Tr1 and the second main transistor Tr2 is the sum of the breakdown voltages of the first surge protection device 1 and the second surge protection device 11, the first surge transistor No current flows through the protection device 1 and the second surge protection device 11. Therefore, as long as the first main transistor Tr1, the second main transistor Tr2, and the protection transistor Tr6 are off, the first surge protection device 1 and the second surge protection device 11 even if the power supply system 100 is in the reverse connection state. A large current does not flow through.
- the voltage applied to the series circuit of the first main transistor Tr1 and the second main transistor Tr2 is divided by the first surge protection device 1 and the second surge protection device 11. Therefore, since the voltage applied to the first surge protection device 1 and the second surge protection device 11 is low, the first surge protection device 1 or the second surge protection device 11 will not burn out.
- the protection transistor Tr6 When the protection transistor Tr6 is on, when the voltage of the drain electrode of the first main transistor Tr1 with respect to the potential of the drain electrode of the second main transistor Tr2 becomes the breakdown voltage of the first surge protection device 1, A current flows in the order of the first surge protection device 1, the protection transistor Tr6, and the diode D2. In the same case, when the voltage of the drain electrode of the second main transistor Tr2 with respect to the potential of the drain electrode of the first main transistor Tr1 becomes the breakdown voltage of the second surge protection device 11, the current becomes the second surge protection. The device 11 flows in the order of the protection transistor Tr6 and the diode D1. Therefore, for example, as the first surge protection device 1 and the second surge protection device 11, a surge protection device having a breakdown voltage similar to that of the first embodiment can be adopted.
- the switch control unit 61 turns on the protection transistor Tr6 before turning off the first main transistor Tr1 and the second main transistor Tr2. That is, the first main transistor Tr1 and the second main transistor Tr2 can be turned off with the protection transistor Tr6 turned on. Thereby, when the first main transistor Tr1 and the second main transistor Tr2 are turned off, the first surge protection device 1 and the second surge protection device 11 function appropriately.
- the switch circuit 110 in the seventh embodiment has the same effect as the switch circuit 110 in the first embodiment.
- the protection transistor Tr6 may be kept on after being turned on, or may be turned off in response to the ignition of the vehicle being turned off. However, in order to keep the protection transistor Tr6 on, the switch controller 61 needs to output a control voltage. Here, the protection transistor Tr6 is normally off. Electric power can be consumed by the output of the control voltage. Therefore, similarly to the cutoff switch S1, the protection transistor Tr6 may be turned off after a predetermined period after the first main transistor Tr1 and the second main transistor Tr2 are turned off.
- the switch control unit 61 may turn off the protection transistor Tr6 after the current flowing through the first surge protection device 1 and the second surge protection device 11 becomes zero. Thereby, the switching loss of the protection transistor Tr6 can be reduced.
- the protection transistor Tr6 may function as a switch, and thus may be a bipolar transistor or an IGBT.
- the drain electrode of the first main transistor Tr1 is connected to the drain electrode of the second main transistor Tr2.
- the connection between the first main transistor Tr1 and the second main transistor Tr2 is not limited to such a connection.
- the points of the eighth embodiment different from the first embodiment will be described. Since the other configuration except the configuration to be described later is the same as that of the first embodiment, the same reference numerals are given and detailed description thereof is omitted.
- FIG. 12 is a schematic diagram of the power supply system 100 according to the eighth embodiment.
- the drain electrode of the first main transistor Tr1 is connected to the drain electrode of the second main transistor Tr2.
- the source electrodes of the first main transistor Tr1 and the second main transistor Tr2 are connected to the connectors 41 and 42, respectively.
- the cathode of the diode D1 is connected to the cathode of the diode D2, and the anodes of the diodes D1 and D2 are connected to the connectors 41 and 42, respectively.
- the first surge protection device 1 is connected between the connectors 41 and 42.
- the emitter electrode of the sub-transistor Tr3 is connected to the source electrode of the second main transistor Tr2.
- the cathodes of the diodes D1 and D2 are connected to each other, no current flows through the diodes D1 and D2 when the first main transistor Tr1 and the second main transistor Tr2 are off.
- the first main transistor Tr1 and the second main transistor Tr2 function as transistor circuits.
- the switch circuit 110 further includes a sub-transistor Tr7, a diode D7, and resistors R5 and R6.
- the sub-transistor Tr7 is an NPN type bipolar transistor.
- the emitter electrode is connected to the source electrode of the first main transistor Tr1
- the collector electrode is connected to the gate electrode of the first main transistor Tr1 through the resistor R1, and Tr2 through the resistor R2.
- a resistor R5 is connected between the emitter electrode and the base electrode of the sub-transistor Tr3.
- One end of a resistor R6 is further connected to the base electrode of the sub-transistor Tr3, and the other end of the resistor R6 is connected to the cathode of the diode D7.
- the anode of the diode D7 is grounded.
- the sub-transistor Tr7 is on when the voltage of the base electrode with reference to the potential of the emitter electrode is equal to or higher than a certain positive voltage. Similarly to the sub-transistor Tr3, the sub-transistor Tr7 is off when the voltage of the base electrode with respect to the potential of the emitter electrode is less than a certain positive voltage. The sub-transistor Tr7 is turned on or off according to the voltage of the base electrode with reference to the potential of the emitter electrode.
- the constant voltage related to the turn-on and turn-off of the sub-transistor Tr7 is also sufficiently lower than the constant voltage related to the turn-on and turn-off of the first main transistor Tr1, and sufficiently lower than the constant voltage related to the turn-on and turn-off of the second main transistor Tr2. .
- the sub-transistor Tr3 When current flows from the connector 41 to the connector 42, when the first main transistor Tr1 and the second main transistor Tr2 are turned off, the sub-transistor Tr3 operates in the same manner as in the first embodiment, and the gate of the second main transistor Tr2 The voltage between the sources changes in the same way as the voltage between the gate and the source shown in FIG. Therefore, after the first main transistor Tr1 and the second main transistor Tr2 are turned off, the second main transistor Tr2 is maintained off.
- FIG. 13 is an explanatory diagram of the operation of the switch circuit 110.
- FIG. 13 shows the transition of the voltage of the gate electrode and the source electrode of the first main transistor Tr1 and the transition of the voltage between the gate and the source of the first main transistor Tr1. In these transitions, time is shown on the horizontal axis.
- the voltages of the gate electrode and the source electrode shown in FIG. 13 are voltages based on the ground potential.
- the voltage between the gate and the source is a gate voltage based on the potential of the source electrode.
- the voltage of the connector 41 with respect to the ground potential is substantially equal to the terminal voltage of the first power storage device 31. It is in agreement and is a positive voltage. Therefore, no current flows through the resistor R5 due to the action of the diode D7. As a result, in the sub-transistor Tr7, the voltage of the base electrode with reference to the potential of the emitter electrode is zero [V], which is less than a positive constant voltage. Therefore, when the first main transistor Tr1 and the second main transistor Tr2 are on, the sub-transistor Tr7 is off.
- the drive circuit 2 adjusts the voltage of the gate electrode from the set voltage to, for example, zero [V] in order to turn off the first main transistor Tr1 and the second main transistor Tr2.
- the wiring inductance of the wiring L1 increases the voltage of the connector 41 with respect to the ground potential until the voltage between the connectors 41 and 42 becomes the breakdown voltage of the first surge protection device 1. At this time, the voltage of the emitter electrode of the sub-transistor Tr7 with respect to the ground potential is still a positive voltage, and the sub-transistor Tr7 is kept off.
- the first surge protection device 1 operates in the same manner as in the first embodiment. Therefore, when the first main transistor Tr1 and the second main transistor Tr2 are turned off, a current flows through the first surge protection device 1 until the energy stored in the wirings L1 and L2 becomes zero. This current decreases with a constant slope. When the energy stored in the wirings L1 and L2 becomes zero, the voltage of the source electrode of the first main transistor Tr1 decreases to the terminal voltage of the first power storage device 31 with respect to the ground potential, and the first main transistor The voltage between the gate and source of Tr1 rises. At this time, the voltage between the gate and the source is still negative, and the absolute value of this voltage substantially matches the terminal voltage of the first power storage device 31 with respect to the ground potential.
- the operation of the switch circuit 110 when current flows from the connector 42 to the connector 41 is the same as the operation of the switch circuit 110 when current flows from the connector 41 to the connector 42.
- the sub-transistor Tr7 is a sub-transistor when current is flowing from the connector 41 to the connector 42. Acts the same as Tr3. Therefore, after the first main transistor Tr1 and the second main transistor Tr2 are turned off, the first main transistor Tr1 is kept off.
- the diode D7 and the resistors R5 and R6 correspond to the diode D3 and the resistors R3 and R4, respectively.
- the voltage of the connector 42 with respect to the ground potential is substantially equal to the terminal voltage of the second power storage device 32, and is positive Is the voltage. Therefore, no current flows through the resistor R3 due to the action of the diode D3.
- the voltage of the base electrode with reference to the potential of the emitter electrode is zero [V], which is less than a positive constant voltage. Therefore, when the first main transistor Tr1 and the second main transistor Tr2 are on, the sub-transistor Tr7 is off.
- the drive circuit 2 adjusts the voltage of the gate electrode from the set voltage to, for example, zero [V] in order to turn off the first main transistor Tr1 and the second main transistor Tr2.
- the wiring inductance of the wiring L2 increases the voltage of the connector 42 with respect to the ground potential until the absolute value of the voltage between the connectors 41 and 42 becomes the breakdown voltage of the first surge protection device 1. At this time, the voltage of the emitter electrode of the sub-transistor Tr3 with respect to the ground potential is still a positive voltage, and the sub-transistor Tr3 is kept off.
- the voltages of the gate electrodes of the first main transistor Tr1 and the second main transistor Tr2 are adjusted from the set voltage to zero [V], the voltage of the source electrode of the second main transistor Tr2 rises, so that the second main transistor Tr2 The gate-source voltage is negative. For this reason, the voltage between the gate and the source of the second main transistor Tr2 does not become a positive constant voltage or more, and the first main transistor Tr1 is kept off.
- the voltage between the gate and the source of the second main transistor Tr2 is a gate voltage based on the potential of the source electrode.
- the first surge protection device 1 operates in the same manner as in the first embodiment. Therefore, when the first main transistor Tr1 and the second main transistor Tr2 are turned off, a current flows through the first surge protection device 1 until the energy stored in the wirings L1 and L2 becomes zero. This current decreases with a constant slope. When the energy stored in the wirings L1 and L2 becomes zero, the voltage of the source electrode of the first main transistor Tr1 decreases to the terminal voltage of the second power storage device 32 with respect to the ground potential, and the second main transistor The voltage between the gate and source of Tr2 increases. At this time, the voltage between the gate and the source is still negative, and the absolute value of this voltage substantially matches the terminal voltage of the second power storage device 32 with respect to the ground potential.
- the switch circuit 110 according to the eighth embodiment configured as described above has the same effect as the switch circuit 110 according to the first embodiment.
- a plurality of series circuits including the first main transistor Tr1 and the second main transistor Tr2 may be connected in parallel to each other.
- the drain electrode of the first main transistor Tr1 is connected to the drain electrode of the second main transistor Tr2.
- the source electrode of each first main transistor Tr1 is connected to the emitter electrode of the sub-transistor Tr7, and the source electrode of each second main transistor Tr2 is connected to the emitter electrode of the sub-transistor Tr3.
- a plurality of first main transistors Tr1 may be connected in parallel, or a plurality of second main transistors Tr2 may be connected in parallel.
- the cutoff switch S1 may be connected to the first surge protection device 1 in series.
- the second surge protection device 11 is connected between one end of the first surge protection device 1 on the connector 42 side and the source electrode of the second main transistor Tr2 for protection.
- the transistor Tr6 may be connected between the drain electrodes of the first main transistor Tr1 and the second main transistor Tr2 and one end of the first surge protection device 1 on the connector 42 side.
- the protection transistor Tr6 is an N-channel FET
- the drain electrode of the protection transistor Tr6 is connected to the drain electrodes of the first main transistor Tr1 and the second main transistor Tr2, and the source electrode of the protection transistor Tr6 is the first one.
- One surge protection device 1 is connected to one end of the connector 42 side.
- the sub-transistor Tr7 is not limited to the NPN bipolar transistor, and may be an N-channel FET.
- the sub-transistor Tr3 is not limited to an NPN-type bipolar transistor, and may be an N-channel FET.
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- Electronic Switches (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
Description
本出願は、2015年11月17日出願の日本出願第2015-224625号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。
特許文献1に記載されているスイッチ回路では、例えば、蓄電装置の正極がバイポーラトランジスタのコレクタ電極に接続され、バイポーラトランジスタのエミッタ電極が負荷の一端に接続され、蓄電装置の負極と、負荷の他端とは接地される。この場合において、バイポーラトランジスタがターンオンしたとき、蓄電装置はバイポーラトランジスタを介して負荷に電力を供給し、バイポーラトランジスタがターンオフしたとき、蓄電装置から負荷への電力供給は停止する。
そこで、本願では、ターンオフが行われた場合にトランジスタで発生する熱量が小さいスイッチ回路と、該スイッチ回路を備える電源システムとを提供することを目的とする。
本開示によれば、ターンオフが行われた場合にトランジスタで発生する熱量が小さい。
最初に本発明の実施態様を列記して説明する。また、以下に記載する実施形態の少なくとも一部を任意に組み合わせてもよい。
本発明の実施形態に係るスイッチ回路及び電源システムの具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、請求の範囲によって示され、請求の範囲と均等の意味及び範囲内での全ての変更が含まれることが意図される。
図1は、実施形態1における電源システム100の構成を示す概略図である。電源システム100は車両に搭載される。電源システム100はサージ防護機能付きのスイッチ回路110を有している。図1の例示では、サージ防護機能付きのスイッチ回路110は経路PS1,PS2、第1メイントランジスタTr1、第2メイントランジスタTr2、サブトランジスタTr3及び第1サージ防護デバイス1を備えている。
サブトランジスタTr3のターンオン及びターンオフに係る一定電圧は、第1メイントランジスタTr1のターンオン及びターンオフに係る一定電圧よりも十分に低く、第2メイントランジスタTr2のターンオン及びターンオフに係る一定電圧よりも十分に低い。
また、第1メイントランジスタTr1及び第2メイントランジスタTr2がオンである場合、接地電位を基準としたサブトランジスタTr3のエミッタ電極の電圧は、接地電位を基準とした第1蓄電装置31の端子電圧に略一致しており、正の電圧である。このため、ダイオードD3の作用により、抵抗R3に電流が流れることはない。結果、サブトランジスタTr3において、エミッタ電極の電位を基準としたベース電極の電圧はゼロ[V]であり、正の一定電圧未満である。このため、第1メイントランジスタTr1及び第2メイントランジスタTr2がオンである場合、サブトランジスタTr3はオフである。
第1メイントランジスタTr1及び第2メイントランジスタTr2がオンであり、かつ、第2蓄電装置32の電圧が第1蓄電装置31の電圧よりも高ければ、第2蓄電装置32から配線L2、第2メイントランジスタTr2、第1メイントランジスタTr1及び配線L1を経由して第1蓄電装置31へ電流が流れる。これにより、第1蓄電装置31は第2蓄電装置32によって充電される。
実施形態1では、一対の第1メイントランジスタTr1及び第2メイントランジスタTr2が設けられているものの、第1メイントランジスタTr1及び第2メイントランジスタTr2の両方が設けられる必要はない。例えば第2蓄電装置32の替わりに負荷が設けられるときには、第2メイントランジスタTr2は不要である。
以下では、実施形態2について実施形態1と異なる点を説明する。後述する構成を除く他の構成については実施形態1と同様であるため、同様の符号を付してその詳細な説明を省略する。
第1メイントランジスタTr1のドレイン電極はコネクタ41に接続され、第1メイントランジスタTr1のソース電極は、コネクタ42と、サブトランジスタTr3のエミッタ電極とに接続されている。
なお、実施形態2におけるスイッチ回路110では、コネクタ42からコネクタ41へ電流が流れることはない。また、実施形態2におけるスイッチ回路110では、第2メイントランジスタTr2及び抵抗R2は設けられていない。
実施形態2において、第1メイントランジスタTr1の数は2以上であってもよい。
以下では、実施形態3について実施形態2と異なる点を説明する。後述する構成を除く他の構成については実施形態2と同様であるため、同様の符号を付してその詳細な説明を省略する。
複数の第1メイントランジスタTr1夫々のドレイン電極及びソース電極間にダイオードD1が接続されている。
実施形態2,3において、第1メイントランジスタTr1は、Nチャネル型のFETに限定されず、NPN型のバイポーラトランジスタ又はIGBT(Insulated Gate Bipolar Transistor)等であってもよい。
実施形態1において、第1メイントランジスタTr1及び第2メイントランジスタTr2の直列回路の数が2以上であってもよい。
以下では、実施形態4について実施形態1と異なる点を説明する。後述する構成を除く他の構成については実施形態1と同様であるため、同様の符号を付してその詳細な説明を省略する。
以上のように構成された実施形態4におけるスイッチ回路110は、実施形態1におけるスイッチ回路110と同様の効果を奏する。
実施形態1において、第1メイントランジスタTr1及び第2メイントランジスタTr2夫々の数は1つに限定されない。
以下では、実施形態5について実施形態1と異なる点を説明する。後述する構成を除く他の構成については実施形態1と同様であるため、同様の符号を付してその詳細な説明を省略する。
同様に、第2メイントランジスタTr2のドレイン電極及びソース電極間には、第1サージ防護デバイス1bが接続されている。図8の例示では、第1サージ防護デバイス1bもツェナーダイオードを有し、このツェナーダイオードのカソード及びアノード夫々は、第2メイントランジスタTr2のドレイン電極及びソース電極に接続されている。
同様に、第1サージ防護デバイス1bのツェナーダイオードにおいて、アノードの電位を基準としたカソードの電圧が降伏電圧となった場合、カソードからアノードへ電流が流れる。第1サージ防護デバイス1bのツェナーダイオードのアノードから、複数のダイオードD1及び第1サージ防護デバイス1aの少なくとも1つを介して電流が流れる。
第1サージ防護デバイス1a,1b夫々の降伏電圧は、第1蓄電装置31及び第2蓄電装置32の端子電圧の差分値を超えている。
以上のように構成された実施形態5におけるスイッチ回路110は、実施形態1におけるスイッチ回路110と同様の効果を奏する。
図1に示すように第1蓄電装置31及び第2蓄電装置32が設けられる場合、作業員は第1蓄電装置31及び第2蓄電装置32を誤って接続する可能性がある。例えば第2蓄電装置32の正極と負極とを逆に接続することがある。つまり第2蓄電装置32の負極がコネクタ42に接続され、第2蓄電装置32の正極が接地される。以下では、このように正極と負極とを逆にして第1蓄電装置31又は第2蓄電装置32を接続する状態を、逆接続状態とも呼ぶ。
以下では、実施形態6について実施形態1と異なる点を説明する。後述する構成を除く他の構成については実施形態1と同様であるため、同様の符号を付してその詳細な説明を省略する。
ここで、「同時」は、ターンオン及びターンオフを行うタイミングが完全に一致していることだけを意味せず、ターンオン及びターンオフを行うタイミングが実質的に一致していることも意味する。
また、電源システム100が逆接続状態である場合において、遮断スイッチS1がオフであるとき、第1メイントランジスタTr1及び第2メイントランジスタTr2の直列回路に印加される電圧は、遮断スイッチS1及び第1サージ防護デバイス1の直列回路にも印加される。このとき、第1メイントランジスタTr1及び第2メイントランジスタTr2の直列回路に印加される電圧は、遮断スイッチS1と、第1サージ防護デバイス1とに分圧される。よって、第1サージ防護デバイス1に印加される電圧は低いので、第1サージ防護デバイス1又は遮断スイッチS1が焼損することはない。
なお、遮断トランジスタTr4,Tr5夫々は、Nチャネル型のFETに限定されず、Pチャネル型のFETであってもよい。この場合、遮断トランジスタTr4,Tr5夫々は、ソース電極の電位を基準としたゲート電極の電圧が負の一定電圧未満である場合、オンである。また、遮断トランジスタTr4,Tr5夫々は、ソース電極の電位を基準としたゲート電極の電圧が負の一定電圧以上である場合、オフである。
また、遮断スイッチS1の構成は、遮断トランジスタTr4,Tr5の代わりに、バイポーラトランジスタ又はリレー接点等を用いる構成であってもよい。
図11は、実施形態7におけるスイッチ回路110の一部を示す概略図である。
以下では、実施形態7について実施形態1と異なる点を説明する。後述する構成を除く他の構成については実施形態1と同様であるため、同様の符号を付してその詳細な説明を省略する。
従って、例えば第1サージ防護デバイス1及び第2サージ防護デバイス11として、実施形態1と同様の降伏電圧を有するサージ防護デバイスを採用することができる。
従って、実施形態7におけるスイッチ回路110は、実施形態1におけるスイッチ回路110と同様の効果を奏する。
なお、実施形態7において、保護トランジスタTr6は、スイッチとして機能すればよいため、バイポーラトランジスタ又はIGBT等であってもよい。
実施形態1では、第1メイントランジスタTr1のドレイン電極が第2メイントランジスタTr2のドレイン電極に接続されている。しかしながら、第1メイントランジスタTr1及び第2メイントランジスタTr2の接続はこのような接続に限定されない。
以下では、実施形態8について実施形態1と異なる点を説明する。後述する構成を除く他の構成については実施形態1と同様であるため、同様の符号を付してその詳細な説明を省略する。
サブトランジスタTr7のターンオン及びターンオフに係る一定電圧も、第1メイントランジスタTr1のターンオン及びターンオフに係る一定電圧よりも十分に低く、第2メイントランジスタTr2のターンオン及びターンオフに係る一定電圧よりも十分に低い。
以上のように構成された実施形態8におけるスイッチ回路110は実施形態1におけるスイッチ回路110と同様の効果を奏する。
11 第2サージ防護デバイス
2 駆動回路
21 出力端子
6,61 スイッチ制御部
31 第1蓄電装置
32 第2蓄電装置
41,42 コネクタ
100 電源システム
110 スイッチ回路
D1,D2,・・・,D7 ダイオード
E1 直流電源
L1,L2 配線
P1,P2 接続点
PS1,PS2 経路
R1,R2,・・・,R6 抵抗
S1 遮断スイッチ
Tr1 第1メイントランジスタ
Tr2 第2メイントランジスタ
Tr3 サブトランジスタ
Tr4,Tr5 遮断トランジスタ
Tr6 保護トランジスタ
Claims (7)
- 車両用のスイッチ回路であって、
第1電極と第2電極と制御電極とを有し、前記制御電極と前記第2電極との間の電圧に応じて、前記第1電極と前記第2電極との間のオン/オフが切り替わる第1メイントランジスタを含むトランジスタ回路と、
該トランジスタ回路の両端間に接続され、印加される電圧を第1所定電圧以下に維持する第1サージ防護デバイスと、
前記第1メイントランジスタの前記制御電極と前記第2電極との間に設けられ、前記第1メイントランジスタがターンオフした場合にターンオンするサブトランジスタと
を備えるスイッチ回路。 - 前記トランジスタ回路は、前記第1メイントランジスタの前記第1電極又は第2電極に接続される第2メイントランジスタを含み、
前記第1メイントランジスタ及び第2メイントランジスタは同時にターンオン又はターンオフする
請求項1に記載のスイッチ回路。 - 前記トランジスタ回路及び第1サージ防護デバイス間に接続される遮断スイッチを備える
請求項1又は請求項2に記載のスイッチ回路。 - 前記第1メイントランジスタのターンオンよりも前に前記遮断スイッチをターンオンし、前記第1メイントランジスタがターンオフしてから所定期間が経過した後に、前記遮断スイッチをターンオフするスイッチ制御部
を備える請求項3に記載のスイッチ回路。 - 前記トランジスタ回路及び第1サージ防護デバイスの間に接続され、印加される電圧を第2所定電圧以下に維持する第2サージ防護デバイスと、
前記第1メイントランジスタ及び第2メイントランジスタ間の接続ノード、並びに、前記第1サージ防護デバイス及び第2サージ防護デバイス間の接続ノードの間に接続される保護トランジスタと
を備える請求項2に記載のスイッチ回路。 - 前記第1メイントランジスタ及び第2メイントランジスタのターンオンよりも前に前記保護トランジスタをターンオンし、前記第1メイントランジスタ及び第2メイントランジスタがターンオフしてから所定期間が経過した後に、前記保護トランジスタをターンオフするスイッチ制御部
を備える請求項5に記載のスイッチ回路。 - 請求項1から請求項6のいずれか1つに記載のスイッチ回路と、
該スイッチ回路に正極が接続される2つの蓄電装置と
を備える電源システム。
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DE112016005269.3T DE112016005269T5 (de) | 2015-11-17 | 2016-10-27 | Umschaltschaltung und Stromversorgungssystem |
US15/772,175 US10944392B2 (en) | 2015-11-17 | 2016-10-27 | Switch circuit and power supply system |
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