WO2017057332A1 - フレキシブル発光デバイス、照明装置および画像表示装置 - Google Patents
フレキシブル発光デバイス、照明装置および画像表示装置 Download PDFInfo
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- WO2017057332A1 WO2017057332A1 PCT/JP2016/078398 JP2016078398W WO2017057332A1 WO 2017057332 A1 WO2017057332 A1 WO 2017057332A1 JP 2016078398 W JP2016078398 W JP 2016078398W WO 2017057332 A1 WO2017057332 A1 WO 2017057332A1
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Classifications
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the gap between the two substrates becomes an air layer.
- the air layer formed between the substrates functions as, for example, a low refractive index layer that totally reflects light.
- members such as a prism, a polarizing film, and a polarizing plate are arranged with a certain distance so that an air layer serving as a low refractive index layer is provided between the members. Yes.
- each member in order to form an air layer in this way, each member must be arranged with a certain distance, and therefore, the members cannot be stacked in order, which takes time for manufacturing.
- FIG. 5 is a diagram schematically showing a part of a process in the method for manufacturing a flexible light-emitting device of the present invention and another example of an apparatus used therefor.
- FIG. 6 is a photograph showing a state of light leakage when the flexible light-emitting devices of Examples and Comparative Examples are deformed (bent).
- the fibrous structural unit is, for example, a nanofiber having a diameter of nano-size, and specifically includes cellulose nanofiber and alumina nanofiber.
- the plate-like structural unit include nanoclay, and specifically, nano-sized bentonite (for example, Kunipia F [trade name]) and the like.
- the fibrous structural unit is not particularly limited, but for example, from the group consisting of carbon nanofiber, cellulose nanofiber, alumina nanofiber, chitin nanofiber, chitosan nanofiber, polymer nanofiber, glass nanofiber, and silica nanofiber. It may be at least one fibrous material selected.
- the low refractive index layer may contain, for example, an acid or a base that acts to increase the strength of the low refractive index layer by at least one of light irradiation and heating.
- the base material when a conductive base material is used as the base material, it is necessary to ensure insulation on the formation surface of the organic EL element. Therefore, when using a conductive base material, it is necessary to provide an insulating layer on the conductive base material.
- the insulating layer for example, an inorganic insulating layer, an organic insulating layer, a laminate of an inorganic insulating layer and an organic insulating layer, or the like can be used.
- the organic EL element may be formed on the insulating layer.
- the formation method of the second electrode 14 is not particularly limited, and may be a general method, for example, a sputtering method, a vapor deposition method, a CVD method, or the like.
- Examples of the patterning method for the second electrode layer include a shadow mask method and a photolithography method.
- the low refractive index layer of the present invention may be laminated on a resin film, may be laminated directly on the resin film, or may be laminated via another layer.
- the haze can be measured by, for example, the following method.
- Examples of the gel compound include a gelled product obtained by gelling a monomer compound.
- examples of the gel silicon compound include gelled products in which the monomer silicon compounds are bonded to each other, and specific examples include gelled products in which the monomer silicon compounds are bonded to each other through hydrogen bonding or intermolecular force bonding.
- Examples of the bond include a bond by dehydration condensation. The gelation method will be described later in the production method of the present invention.
- the gelation of the monomer compound is preferably performed in a solvent, for example.
- the ratio of the monomer compound in the solvent is not particularly limited.
- the solvent include dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), N, N-dimethylacetamide (DMAc), dimethylformamide (DMF), ⁇ -butyllactone (GBL), acetonitrile (MeCN), ethylene Examples thereof include glycol ethyl ether (EGEE).
- DMSO dimethyl sulfoxide
- NMP N-methylpyrrolidone
- DMAc N, N-dimethylacetamide
- DMF dimethylformamide
- GBL ⁇ -butyllactone
- MeCN acetonitrile
- EGEE glycol ethyl ether
- one type of solvent may be used, or two or more types may be used in combination.
- the solvent used for the gelation is also referred to as “gelling solvent”.
- the gel-like compound obtained by the gelation is preferably subjected to an aging treatment after the gelation reaction.
- the aging treatment for example, by further growing primary particles of a gel having a three-dimensional structure obtained by gelation, it is possible to increase the size of the particles themselves.
- the contact state of the contacting neck portion can be increased from point contact to surface contact.
- the gel subjected to the aging treatment as described above for example, increases the strength of the gel itself, and as a result, can improve the strength of the three-dimensional basic structure after pulverization.
- the pore size of the void structure in which the three-dimensional basic structure is deposited can be prevented from shrinking due to solvent volatilization during the drying process.
- the photocatalyst generator is not particularly limited, and examples thereof include a photobase generator (a catalyst that generates a basic catalyst by light irradiation), a photoacid generator (a substance that generates an acidic catalyst by light irradiation), and the like.
- a photobase generator is preferred.
- crosslinking aid examples include bis (trimethoxysilyl) ethane, bis (triethoxysilyl) ethane, bis (trimethoxysilyl) methane, bis (triethoxysilyl) methane, bis (triethoxysilyl) propane, bis (Trimethoxysilyl) propane, bis (triethoxysilyl) butane, bis (trimethoxysilyl) butane, bis (triethoxysilyl) pentane, bis (trimethoxysilyl) pentane, bis (triethoxysilyl) hexane, bis (tri Methoxysilyl) hexane, bis (trimethoxysilyl) hexane, bis (trimethoxysilyl) hexane, bis (trimethoxysilyl) hexane, bis (trimethoxysilyl) -N-butyl-N-propyl-ethane-1
- the concentration of the pulverized product in the solvent is not particularly limited, and for example, 0.3 to 50% (v / v), 0.5 to 30% (v / v), 1.0 to 10% (v / v) v). If the concentration of the pulverized product is too high, for example, the fluidity of the sol particle solution is remarkably lowered, and there is a possibility that aggregates and coating streaks are generated during coating. On the other hand, if the concentration of the pulverized product is too low, for example, not only does it take a considerable amount of time to dry the solvent of the sol particle liquid, but also the residual solvent immediately after drying increases, so the porosity decreases. There is a possibility that.
- the drying process temperature and time are preferably lower and shorter in relation to, for example, continuous productivity and high porosity. If the conditions are too strict, for example, when the substrate is a resin film, the substrate is extended in a drying furnace by being close to the glass transition temperature of the substrate, and formed immediately after coating. Defects such as cracks may occur in the void structure. On the other hand, if the conditions are too loose, for example, since the residual solvent is included at the time of leaving the drying furnace, there is a possibility that defects in appearance such as scratches will occur when rubbing with the roll in the next process. is there.
- the drying treatment may be, for example, natural drying, heat drying, or vacuum drying.
- the drying method is not particularly limited, and for example, a general heating means can be used.
- the heating means include a hot air fan, a heating roll, and a far infrared heater.
- heat drying when it is premised on industrial continuous production, it is preferable to use heat drying.
- a solvent having a low surface tension is preferable for the purpose of suppressing the generation of shrinkage stress accompanying the solvent volatilization during drying and the cracking phenomenon of the void layer (the silicone porous body).
- the catalyst contained in the low refractive index layer of the present invention allows chemical bonding (for example, cross-linking reaction) between the microporous particles. It is considered that the strength is improved by further progressing.
- the microporous particles are microporous particles of a silicon compound (for example, a pulverized gel-like silica compound) and a residual silanol group (OH group) is present in the low refractive index layer, It is thought that residual silanol groups are chemically bonded to each other by a crosslinking reaction.
- the catalyst contained in the low refractive index layer of the present invention is not particularly limited.
- the low refractive index layer of the present invention may be reacted with the adhesive layer to form an intermediate layer disposed between the low refractive index layer of the present invention and the adhesive layer ( Intermediate layer forming step).
- the intermediate layer makes it difficult for the low refractive index layer of the present invention and the adhesive layer to peel off, for example.
- the reason (mechanism) is unknown, but is presumed to be due to, for example, the throwing property (throwing effect) of the intermediate layer.
- the anchoring property an anchoring effect
- a coating step (1) is performed in which the high refractive index layer 30 is fed from the feed roller 101 and conveyed, and the coating roll 102 is used to apply the sol particle liquid 20 ′′ to the high refractive index layer 30.
- the process proceeds to the drying step (2).
- a preliminary drying process is performed after a coating process (1) and prior to a drying process (2).
- the preliminary drying step can be performed at room temperature without heating.
- the heating means 111 is used.
- the heating means 111 as described above, a hot air fan, a heating roll, a far infrared heater, or the like can be used as appropriate.
- the drying step (2) may be divided into a plurality of steps, and the drying temperature may be increased as the subsequent drying step is performed.
- the laminated film 1A manufactured according to FIG. 4 or 5 may be appropriately cut, for example, to obtain the flexible light emitting device 1A of FIG.
- the strength improving step (aging step) (4) and the intermediate layer forming step (5) may or may not be performed.
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Abstract
Description
本発明のフレキシブル発光デバイスは、前述のとおり、発光体層と、低屈折率層と、高屈折率層とが、前記順序で積層されており、前記各層間には、他の構成要素(例えば他の層)が適宜存在しても良いし、存在していなくても良い。なお、以下においては、主に、前記発光体層が有機EL層を含む場合、すなわち、本発明のフレキシブル発光デバイスが有機ELデバイスである場合を例に挙げて説明する。しかし、前述のとおり、本発明のフレキシブル発光デバイスは、有機ELデバイスに限定されず、その他の任意のフレキシブル発光デバイスであっても良い。すなわち、前記発光体層は、有機EL層に代えて、または有機EL層に加え、他の任意の発光層を含んでいても良い。
図1の断面図に、本発明のフレキシブル発光デバイスの構成の一例を模式的に示す。図示のとおり、このフレキシブル発光デバイス1は、発光体層10と、低屈折率層20と、高屈折率層30とが、前記順序で積層されている。発光体層10は、基材11上に、第1電極12、有機EL層(発光層)13および第2電極14が、前記順序で積層されて構成されている。そして、低屈折率層20および高屈折率層30は、基材11において、第1電極12、有機EL層(発光層)13および第2電極14が積層されている面と反対側の面上に積層されている。
本発明の低屈折率層は、例えば、樹脂フィルム上に積層されていても良く、前記樹脂フィルム上に、直接積層されてもよいし、他の層を介して積層されてもよい。
(1) アクリルフィルムに塗工・成膜をした空隙層(本発明の低屈折率層)を、直径15mm程度の円状にサンプリングする。
(2) 次に、前記サンプルについて、蛍光X線(島津製作所社製:ZSX PrimusII)でケイ素を同定して、Si塗布量(Si0)を測定する。つぎに、前記アクリルフィルム上の前記空隙層について、前述のサンプリングした近傍から、50mm×100mmに前記空隙層をカットし、これをガラス板(厚み3mm)に固定した後、ベンコット(登録商標)による摺動試験を行う。摺動条件は、重り100g、10往復とする。
(3) 摺動を終えた前記空隙層から、前記(1)と同様にサンプリングおよび蛍光X線測定を行うことで、擦傷試験後のSi残存量(Si1)を測定する。耐擦傷性は、ベンコット(登録商標)による摺動試験前後のSi残存率(%)で定義し、以下の式で表される。
耐擦傷性(%)=[残存したSi量(Si1)/Si塗布量(Si0)]×100(%)
前記空隙層(本発明の低屈折率層)を、20mm×80mmの短冊状にカットした後、MIT耐折試験機(テスター産業社製:BE-202)に取り付け、1.0Nの荷重をかける。前記空隙層を抱き込むチャック部は、R2.0mmを使用し、耐折回数を最大10000回行い、前記空隙層が破断した時点の回数を耐折回数とする。
基材(アクリルフィルム)上に空隙層(本発明の低屈折率層)を形成した後、この積層体における前記空隙層について、X線回折装置(RIGAKU社製:RINT-2000)を用いて全反射領域のX線反射率を測定する。そして、Intensityと2θのフィッティグを行った後に、前記積層体(空隙層・基材)の全反射臨界角から膜密度(g/cm3)を算出し、さらに、空孔率(P%)を、以下の式より算出する。
空孔率(P%)=45.48×膜密度(g/cm3)+100(%)
本発明において、前記空隙サイズは、BET試験法により定量化できる。具体的には、比表面積測定装置(マイクロメリティック社製:ASAP2020)のキャピラリに、サンプル(本発明の低屈折率層)を0.1g投入した後、室温で24時間、減圧乾燥を行って、空隙構造内の気体を脱気する。そして、前記サンプルに窒素ガスを吸着させることで吸着等温線を描き、細孔分布を求める。これによって、空隙サイズが評価できる。
空隙層(本発明の低屈折率層)を50mm×50mmのサイズにカットし、ヘイズメーター(村上色彩技術研究所社製:HM-150)にセットしてヘイズを測定する。ヘイズ値については、以下の式より算出を行う。
ヘイズ(%)=[拡散透過率(%)/全光線透過率(%)]×100(%)
アクリルフィルムに空隙層(本発明の低屈折率層)を形成した後に、50mm×50mmのサイズにカットし、これを粘着層でガラス板(厚み:3mm)の表面に貼合する。前記ガラス板の裏面中央部(直径20mm程度)を黒マジックで塗りつぶして、前記ガラス板の裏面で反射しないサンプルを調製する。エリプソメーター(J.A.Woollam Japan社製:VASE)に前記サンプルをセットし、500nmの波長、入射角50~80度の条件で、屈折率を測定し、その平均値を屈折率とする。
アクリルフィルムに空隙層(本発明の低屈折率層)を形成した後に、50mm×140mmの短冊状にサンプリングを行い、前記サンプルをステンレス板に両面テープで固定する。PETフィルム(T100:三菱樹脂フィルム社製)にアクリル粘着層(厚み20μm)を貼合し、25mm×100mmにカットした粘着テープ片を、先ほどの前記空隙層に貼合し、前記PETフィルムとのラミネートを行う。次に、前記サンプルを、引っ張り試験機(島津製作所社製:AG-Xplus)にチャック間距離が100mmになるようにチャッキングした後に、0.3m/minの引張速度で引っ張り試験を行う。50mmピール試験を行った平均試験力を、ピール強度とする。
R1およびR2は、それぞれ、直鎖もしくは分枝アルキル基であり、
R1およびR2は、同一でも異なっていても良く、
R1は、Xが2の場合、互いに同一でも異なっていても良く、
R2は、互いに同一でも異なっていても良い。
本発明の低屈折率層の製造方法は、例えば、微細孔粒子を含む液を作製する工程、基材(例えば樹脂フィルム)上に前記液を塗工する工程、および塗工された液を乾燥する工程を含むことが好ましいが、このかぎりでは無い。前記微細孔粒子を含む液(以下「微細孔粒子含有液」という場合がある。)は、特に限定されないが、例えば、前記微細孔粒子を含む懸濁液である。なお、以下において、主に、前記微細孔粒子が、ゲル状化合物の粉砕物であり、前記低屈折率層がゲル状化合物の粉砕物を含む多孔体(好ましくはシリコーン多孔体)である場合について説明する。ただし、本発明は、前記微細孔粒子が、ゲル状化合物の粉砕物以外である場合も、同様に実施することができる。本発明の積層フィルムロールの製造方法において、前記低屈折率層は、例えば、微細孔粒子同士が化学的に結合している多孔体であり、前記低屈折率層形成工程において、例えば、前記微細孔粒子同士を化学的に結合させる。前記微細孔粒子が、例えば、ケイ素化合物の微細孔粒子であり、前記多孔体が、シリコーン多孔体である。前記ケイ素化合物の微細孔粒子が、例えば、ゲル状シリカ化合物の粉砕体を含む。また、前記低屈折率層の別形態として、ナノファイバー等の繊維状物質からなり、該繊維状物質が絡まり合い空隙を含む形で層を成している空隙層がある。製造方法においては、前記微細孔粒子と同様である。さらに他にも、中空ナノ粒子やナノクレイを用いた空隙層、中空ナノバルーンやフッ化マグネシウムを用いて形成した空隙層も含まれる。また、それらの低屈折率層は単一の構成物質からなる空隙層であってもよいし、また複数の構成物質からなる空隙層であってもよい。空隙層の形態も単一の前記形態であってもよいし、複数の前記形態からなる空隙層であってもよい。以下においては、主に、前記微細孔粒子同士が化学的に結合している多孔体の空隙層について説明する。
つぎに、本発明のフレキシブル発光デバイスの製造方法について、図2~5を用いて例を挙げて説明する。なお、図2~5において、図1と同一の部材は、同一の符号で示している。
本発明のフレキシブル発光デバイスは、例えば、前述のとおり、照明装置または画像表示装置に用いることができる。より具体的には、本発明のフレキシブル発光デバイスは、例えば、有機EL照明装置、有機EL画像表示装置、または電子ペーパー、無機EL画像表示装置、LED画像表示装置のフレキシブル発光デバイスとして用いることができる。ただし、本発明のフレキシブル発光デバイスは、これらに限定されず、どのような用途に用いても良い。
(1)ケイ素化合物のゲル化
DMSO 2.2gに、ケイ素化合物の前駆体であるMTMSを0.95g溶解させた。前記混合液に、0.01mol/Lのシュウ酸水溶液を0.5g添加し、室温で30分撹拌を行うことでMTMSを加水分解して、トリス(ヒドロキシ)メチルシランを生成した。
前記ゲル化処理を行った混合液を、そのまま、40℃で20時間インキュベートして、熟成処理を行った。
つぎに、前記熟成処理したゲル状ケイ素化合物を、スパチュラを用いて数mm~数cmサイズの顆粒状に砕いた。そこに、IPA 40gを添加し、軽く撹拌した後、室温で6時間静置して、ゲル中の溶媒および触媒をデカンテーションした。同様のデカンテーション処理を3回繰り返し、溶媒置換を完了した。そして、前記混合液中の前記ゲル状ケイ素化合物を粉砕処理(高圧メディアレス粉砕)した。前記粉砕処理(高圧メディアレス粉砕)は、ホモジナイザー(商品名 UH-50、エスエムテー社製)を使用し、5ccのスクリュー瓶に、前記溶媒置換を完了したゲル状化合物1.85gおよびIPA 1.15gを秤量した後、50W、20kHzの条件で2分間の粉砕で行った。
厚さ600μm、100m長、屈折率1.51のアクリルフィルム(高屈折率層)の表面に、参考例1で調製した塗工液を塗布(塗工)して、塗工膜を形成した。この時の前記塗工膜のWet厚み(乾燥させる前の厚み)は、約27μmであった。前記塗工膜を、温度100℃で1分処理して乾燥し、さらに、乾燥後の塗工膜に、波長360nmの光を用いて300mJ/cm2の光照射量(エネルギー)でUV照射し、前記フィルム(高屈折率層)上に低屈折率層が形成された積層体を得た。なお、この低屈折率層の屈折率を前述の方法により測定したところ、1.18であった。
以下のようにして、本実施例のフレキシブル発光デバイスを製造した。本実施例のフレキシブル発光デバイスは、フレキシブルOLED(有機発光ダイオードすなわち有機ELデバイス)である。本実施例のフレキシブル発光デバイスは、図2のフレキシブル発光デバイス1Aと同様、発光体層10に、粘接着層40を介して低屈折率層20が積層され、その上に、高屈折率層30が積層されている。発光体層10は、図1に示すように、基材11の、低屈折率層20および高屈折率層30が積層されている側とは反対側の面上に、第1電極12、有機EL層13、および第2電極14が、前記順序で積層されている。
高屈折率層30上に低屈折率層20が積層された積層体に代えて、低屈折率層20を形成しない高屈折率層30のみを発光体層(OLED層)10の基材11側に貼り合わせたこと以外は、実施例1と同様にしてフレキシブル発光デバイス(OLED)を製造した。
11 基材
12 第1電極
13 有機EL層
14 第2電極
20 低屈折率層
20’ 塗工膜(前駆層)
20’’ ゾル粒子液
30 高屈折率層
40 粘接着層
50 保護層(セパレータ)
101 送り出しローラ
102 塗工ロール
110 オーブンゾーン
111 熱風器(加熱手段)
120 化学処理ゾーン
121 ランプ(光照射手段)または熱風器(加熱手段)
105 巻き取りロール
106、107 ロール
201 送り出しローラ
202 液溜め
203 ドクター(ドクターナイフ)
204 マイクログラビア
210 オーブンゾーン
211 加熱手段
220 化学処理ゾーン
221 ランプ(光照射手段)または熱風器(加熱手段)
251 巻き取りロール
261、271 ロール
Claims (7)
- 発光体層と、低屈折率層と、高屈折率層とが前記順序で積層され、
前記低屈折率層は、前記発光体層よりも屈折率が低く、ヘイズが5%未満であり、
前記高屈折率層は、前記低屈折率層よりも屈折率が高い、
ことを特徴とするフレキシブル発光デバイス。 - 前記低屈折率層の屈折率が1.20未満である請求項1記載のフレキシブル発光デバイス。
- 前記発光体層が、有機EL層を含む請求項1記載のフレキシブル発光デバイス。
- 前記発光体層は、さらに、基材と、第1電極と、第2電極とを含み、
前記基材上に、前記第1電極、前記有機EL層、および前記第2電極が、前記順序で積層されている請求項3記載のフレキシブル発光デバイス。 - 前記基材において、前記第1電極、前記有機EL層、および前記第2電極が積層された側と反対側に、前記低屈折率層および前記高屈折率層が積層されている請求項4記載のフレキシブル発光デバイス。
- 請求項1から5のいずれか一項に記載のフレキシブル発光デバイスを含む照明装置。
- 請求項1から5のいずれか一項に記載のフレキシブル発光デバイスを含む画像表示装置。
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