WO2016199728A1 - 巻取式成膜装置、蒸発源ユニット、及び巻取式成膜方法 - Google Patents

巻取式成膜装置、蒸発源ユニット、及び巻取式成膜方法 Download PDF

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Publication number
WO2016199728A1
WO2016199728A1 PCT/JP2016/066789 JP2016066789W WO2016199728A1 WO 2016199728 A1 WO2016199728 A1 WO 2016199728A1 JP 2016066789 W JP2016066789 W JP 2016066789W WO 2016199728 A1 WO2016199728 A1 WO 2016199728A1
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Prior art keywords
line
film
evaporation
nozzle portions
evaporation sources
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PCT/JP2016/066789
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English (en)
French (fr)
Japanese (ja)
Inventor
貴啓 廣野
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株式会社アルバック
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Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020177019741A priority Critical patent/KR102023258B1/ko
Priority to JP2016563493A priority patent/JP6121639B1/ja
Priority to CN201680012735.3A priority patent/CN107406969B/zh
Publication of WO2016199728A1 publication Critical patent/WO2016199728A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Definitions

  • the present invention relates to a winding film forming apparatus, an evaporation source unit, and a winding film forming method for evaporating an evaporation material to form a film of the evaporation material on a film.
  • the film forming apparatus described in Patent Document 1 includes one or a plurality of evaporation sources (crucibles) for evaporating aluminum, and a gas nozzle for ejecting oxygen.
  • evaporation sources crucibles
  • gas nozzle for ejecting oxygen.
  • the supplied oxygen reacts with each other to form an aluminum oxide film on the film.
  • an object of the present invention is to provide a winding film forming apparatus, an evaporation source unit, and a winding film forming method capable of suppressing variations in film thickness and transmittance in the width direction of the film. Is to provide.
  • a winding film forming apparatus includes an unwinding roller, a winding roller, a cooling roller, an evaporation source array, and a gas supply unit.
  • the unwinding roller unwinds the film.
  • the winding roller winds the film unwound from the unwinding roller.
  • the cooling roller is disposed between the unwinding roller and the winding roller, and cools the film.
  • the evaporation source array includes a plurality of first evaporation sources arranged at predetermined intervals on a first line parallel to the axial direction of the cooling roller, and a second parallel to the first line.
  • the gas supply unit includes a plurality of first nozzle portions that eject gas toward the vapor flow from the plurality of first evaporation sources, and a gas toward the vapor flow from the plurality of second evaporation sources. And a plurality of second nozzle portions that are disposed between the evaporation source array and the cooling roller.
  • an evaporation source unit includes an evaporation source array and a gas supply unit.
  • the array includes a plurality of first evaporation sources arranged at a predetermined interval on a first line perpendicular to a transport direction of a film formation target, and a second line parallel to the first line.
  • the plurality of first evaporation sources and the plurality of second evaporation sources arranged at a predetermined interval with a half pitch shift.
  • the gas supply unit includes a plurality of first nozzle portions that eject gas toward the vapor flow from the plurality of first evaporation sources, and a gas toward the vapor flow from the plurality of second evaporation sources.
  • a winding film forming method includes a film that is unwound from an unwinding roller and wound by the winding roller, the unwinding roller, the winding roller, Winding around a cooling roller disposed between the two.
  • a plurality of first evaporation sources arranged at predetermined intervals on a first line parallel to the axial direction of the cooling roller; and downstream of the first line in the film transport direction.
  • An evaporation source array having the plurality of first evaporation sources and a plurality of second evaporation sources arranged at a predetermined interval and shifted by a half pitch on a second line parallel to the first line The evaporation material is evaporated.
  • Gas is ejected from the number of first nozzle portions arranged between the evaporation source array and the cooling roller and corresponding to the plurality of first evaporation sources toward the evaporated evaporation material.
  • a film of the evaporated material that has reacted is formed in a first region of the film.
  • a gas is ejected from the number of second nozzle portions arranged between the evaporation source array and the cooling roller and corresponding to the plurality of second evaporation sources toward the evaporated evaporation material.
  • a film of the evaporated material that has reacted is formed in a second region adjacent to the first region.
  • the gas supply unit has a plurality of first nozzle portions that eject gas toward the vapor flow from the plurality of first evaporation sources, and a gas toward the vapor flow from the plurality of second evaporation sources. Since it has a plurality of second nozzle parts to be ejected, a desired amount of gas is supplied to the vapor flow from the evaporation source. Thereby, the dispersion
  • FIG. 1 It is a schematic longitudinal cross-sectional view of the winding type film-forming apparatus which concerns on one Embodiment of this invention. It is a top view which shows roughly the evaporation source array in the said winding-type film-forming apparatus. It is a top view which shows roughly the evaporation source unit in the said winding-type film-forming apparatus. It is a top view which shows roughly the relationship between arrangement
  • FIG. 1 is a schematic sectional side view showing a configuration of a winding film forming apparatus 1 according to the first embodiment of the present invention.
  • the winding film forming apparatus 1 includes an unwinding roller 2, a winding roller 3, a cooling roller 4, guide rollers 5A and 5B, an evaporation source unit EU1, a vacuum chamber 9 that accommodates these, and a controller 18. With.
  • the X axis, the Y axis, and the Z axis indicate three axis directions orthogonal to each other.
  • the X axis and Y axis indicate the horizontal direction, and the Z axis indicates the height direction.
  • the vacuum chamber 9 has a sealed structure and is connected to the vacuum pump P through the exhaust line L. Thereby, the vacuum chamber 9 is configured such that the inside thereof can be evacuated or maintained in a predetermined reduced pressure atmosphere.
  • the vacuum chamber 9 has a partition plate 10 inside.
  • the partition plate 10 is disposed at a substantially central portion in the Z-axis direction of the vacuum chamber 9 and has an opening having a predetermined size. The periphery of the opening is opposed to the outer peripheral surface of the cooling roller 4 with a predetermined gap.
  • the interior of the vacuum chamber 9 is partitioned by a partition plate 10 into a transfer chamber 11 that is above the partition plate 10 in the Z-axis direction and a film formation chamber 12 that is below the partition plate 10 in the Z-axis direction.
  • An exhaust line L connected to the vacuum chamber 9 is connected to the film forming chamber 12. Therefore, when the vacuum chamber 9 is evacuated, first, the inside of the film forming chamber 12 is evacuated. On the other hand, since there is a predetermined gap between the partition plate 10 and the cooling roller 4 as described above, the inside of the transfer chamber 11 is also exhausted through this gap. Thereby, a pressure difference is generated between the film forming chamber 12 and the transfer chamber 11. By this pressure difference, it is possible to prevent the vapor flow of the evaporating material described later from entering the transfer chamber 11.
  • the exhaust line L is connected only to the film forming chamber 12. However, by connecting another exhaust line to the transfer chamber 11, the transfer chamber 11 and the film forming chamber 12 are independently exhausted. May be.
  • the unwinding roller 2, the winding roller 3, the cooling roller 4, the guide roller 5 ⁇ / b> A, and the guide roller 5 ⁇ / b> B constitute a film 13 transport mechanism.
  • the unwinding roller 2, the winding roller 3, and the cooling roller 4 are each provided with a rotation drive unit (not shown) and configured to be rotatable around an axis parallel to the X axis.
  • the unwinding roller 2 and the winding roller 3 are arranged in the transfer chamber 11 and are configured to be rotatable at a predetermined speed in the direction (clockwise) indicated by the arrow in FIG.
  • the rotation direction of the unwinding roller 2 is not limited to this, and any direction may be used as long as the film can be fed toward the cooling roller 4.
  • the rotation direction of the winding roller 3 is not limited to the clockwise direction, and may be rotated in any direction as long as the film can be wound from the cooling roller 4.
  • the cooling roller 4 is disposed between the unwinding roller 2 and the winding roller 3 in the film 13 conveyance path. Specifically, at least a part of the lower portion of the cooling roller 4 in the Z-axis direction is disposed at a position facing the film forming chamber 12 through an opening provided in the partition plate 10.
  • the cooling roller 4 is configured to be rotated clockwise at a predetermined speed by the rotation drive unit, similarly to the unwinding roller 2 and the winding roller 3. Further, the cooling roller 4 is formed in a cylindrical shape from a metal material such as iron, and includes a cooling mechanism such as a cooling medium circulation system (not shown) therein.
  • the size of the cooling roller 4 is not particularly limited, but typically the axial length (axial length) is equal to or longer than the width of the film 13.
  • the guide roller 5A is disposed between the unwinding roller 2 and the cooling roller 4, and the guide roller 5B is disposed between the winding roller 3 and the cooling roller 4.
  • Each guide roller 5A, 5B is configured by a free roller that does not include a unique rotation drive unit.
  • the number of guide rollers is two, but is not limited thereto.
  • the number and location of guide rollers and drive rollers can be set as appropriate as long as the film to be conveyed is prevented from slacking and a desired conveying posture is obtained.
  • the film 13 is transported at a predetermined speed in the vacuum chamber 9 by the transport mechanism configured as described above.
  • the film 13 includes, but is not limited to, polyethylene terephthalate as a material.
  • Other materials include polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyamides such as nylon 6, nylon 66 and nylon 12, polyvinyl alcohol, polyimide, polyetherimide, polysulfone, polyethersulfone, Transparent resins such as polyetheretherketone, polycarbonate, polyarylate, or acrylic resin can be used.
  • the thickness of the film 13 is not particularly limited, and is, for example, about 5 ⁇ m to 100 ⁇ m. Moreover, there is no restriction
  • the film 13 is continuously unwound clockwise by the unwinding roller 2.
  • the film 13 unwound from the unwinding roller 2 is cooled at a predetermined holding angle through a predetermined gap formed between the cooling roller 4 and the partition plate 10 while traveling is guided by the guide roller 5A. It is wound around the circumferential surface of the roller 4. Thereby, the inner surface of the film 13 that contacts the outer peripheral surface of the cooling roller 4 is cooled by the cooling roller 4 to a predetermined temperature or lower.
  • the film 13 wound around the cooling roller 4 is conveyed clockwise by the rotation of the cooling roller 4, and in the course of the conveyance, the evaporation material unit EU1 forms an evaporation material film on the outer surface (film formation surface) of the film 13. Formed.
  • the evaporation source unit EU1 is disposed in the film forming chamber 12, and includes an evaporation source array 6, a gas supply unit 7, and a support 8.
  • FIG. 2 is a plan view schematically showing the arrangement of the evaporation source array 6.
  • the evaporation source array 6 has a plurality of first evaporation sources and a plurality of second evaporation sources.
  • the plurality of first evaporation sources include five evaporation sources 61A, 61B, 61C, 61D, and 61E each having the same configuration (hereinafter, unless otherwise described individually). (Collectively referred to as source 61).
  • the plurality of second evaporation sources include six evaporation sources 62A, 62B, 62C, 62D, 62E, and 62F each having the same configuration (hereinafter, unless otherwise described separately) 62).
  • the first and second evaporation sources 61 and 62 generate vapor of evaporation material to be deposited on the film formation surface of the film 13.
  • the first and second evaporation sources 61 and 62 contain the same evaporation material, and in this embodiment, aluminum is used as the evaporation material.
  • Each of the first evaporation sources 61 is controlled by the controller 18 so as to generate substantially the same amount of vapor flow. Further, each of the second evaporation sources 62 is also controlled by the controller 18 so as to generate substantially the same amount of vapor flow as the plurality of first evaporation sources 61.
  • the first and second evaporation sources 61 and 62 are constituted by the same evaporation source, and in this embodiment, are constituted by an induction heating type evaporation source.
  • the first and second evaporation sources 61 and 62 include a round (bottomed cylindrical) crucible as a container for holding the evaporation material, and an induction coil surrounding the outer periphery of the crucible.
  • the induction coil is electrically connected to an AC power source (not shown) installed outside the vacuum chamber 9.
  • the plurality of first evaporation sources 61 are arranged on a first line L1 parallel to the X-axis direction.
  • the first line L1 is virtually set in the evaporation source array 6.
  • the plurality of first evaporation sources 61 are arranged on the first line L1 with a predetermined interval P1.
  • the predetermined interval P1 is a distance between the centers of the respective evaporation sources 61 and can be appropriately set according to the size of each evaporation source 61 and the like.
  • the plurality of second evaporation sources 62 are arranged on a second line L2 parallel to the first line L1.
  • the second line L2 is virtually set in the evaporation source array 6.
  • the plurality of second evaporation sources 62 are arranged on the second line L2 at a predetermined interval P1.
  • the first line L1 and the second line L2 are set to the same height position (a height position along the Z-axis direction).
  • the first line L1 is located upstream of the second line L2 in the transport direction of the film 13, and the first line L1 and the second line L2 are arranged in the Y-axis direction with a predetermined interval P2. They are facing each other in parallel directions.
  • the predetermined interval P2 is not particularly limited, and can be set as appropriate according to the size and shape of the first and second evaporation sources 61 and 62, the size of the interval P1, and the like.
  • the plurality of first evaporation sources 61 and the plurality of second evaporation sources 62 are both arranged at a predetermined interval P1, but the plurality of second evaporation sources 62 are arranged with the plurality of first evaporation sources. It is arranged with a half-pitch offset from the evaporation source 61 in the X-axis direction. That is, when viewed from the Y-axis direction, the first and second evaporation sources 61 and 62 are arranged at equal intervals along the X-axis direction.
  • the second evaporation sources 61 and 62 are arranged so as to fall within the range of the width of the cooling roller 4 indicated by a two-dot chain line in FIG.
  • the number of the plurality of first evaporation sources 61 is one less than the number of the plurality of second evaporation sources 62, but the number of the evaporation sources 61 and 62 is appropriately set in accordance with the film width. Can be set. Further, the position or number of evaporation sources to be used may be selected from a plurality of evaporation sources 61 and 62 that are installed in advance according to the film width.
  • the plurality of first evaporation sources 61 and the plurality of second evaporation sources 62 are independently configured, but may be commonly supported by a base portion (not shown). In this case, each evaporation source may be installed in the base portion so that the position and number of the evaporation sources can be changed. Thus, the layout of the evaporation source array can be changed as appropriate according to the type of film and the film formation conditions.
  • FIG. 3 is a plan view schematically showing the arrangement of the gas supply unit 7 and the evaporation source array 6.
  • the gas supply unit 7 includes a plurality of first nozzle units and a plurality of second nozzle units.
  • the plurality of first nozzle portions are five nozzle portions 71A, 71B, 71C, 71D, 71E each having the same configuration (hereinafter, unless otherwise described individually) Part generically).
  • each of the plurality of second nozzle portions includes six nozzle portions 72A, 72B, 72C, 72D, 72E, and 72F having the same configuration (hereinafter, unless otherwise described individually) 72).
  • the plurality of first nozzle portions 71 and the plurality of second nozzle portions 72 are arranged at a predetermined interval P3 on a third line L3 parallel to the X-axis direction. Specifically, the plurality of second nozzle portions 72 are adjacent to the plurality of first nozzle portions 71 so that the first and second nozzle portions 71 and 72 are alternately arranged in the X-axis direction. Be placed.
  • the third line L3 is virtually set and is located upstream of the first and second lines L1 and L2 in the transport direction of the film 13 (upper side in FIG. 3).
  • the third line L3 is located closer to the cooling roller 4 (upper side in FIG. 1) than the first and second lines L1 and L2.
  • the predetermined interval P3 is a distance between the centers of the nozzles of the plurality of first nozzle portions 71. In the present embodiment, the predetermined interval P3 is substantially equal to the predetermined interval P1. However, the predetermined interval P3 is set to an interval equal to or longer than the length of two nozzles constituting the plurality of first nozzle portions 71.
  • the plurality of first nozzle portions 71 are arranged to face the plurality of first evaporation sources 61 in the Y-axis direction in FIG. 3 (although the height positions in the Z-axis direction are different). Specifically, in the first nozzle portions 71A, 71B, 71C, 71D, 71E, oxygen ejected from each first nozzle portion 71 is directly above the first evaporation sources 61A, 61B, 61C, 61D, 61E. It is arranged at a position passing through the position. As a result, the plurality of first nozzle portions 71 can eject oxygen toward the vapor flow from the corresponding first evaporation source 61.
  • the plurality of second nozzle portions 72 are arranged to face the plurality of second evaporation sources 62 in the Y-axis direction in FIG. 3 (although the height positions in the Z-axis direction are different). . Specifically, in the second nozzle portions 72A, 72B, 72C, 72D, 72E, and 72F, oxygen ejected from each second nozzle portion 72 is the first evaporation source 62A, 62B, 62C, 62D, and 62E. , 62F are arranged at positions that pass through the position immediately above 62F. As a result, the plurality of first nozzle portions 72 can eject oxygen toward the vapor flow from the corresponding second evaporation source 62.
  • the number of the plurality of first nozzle portions 71 and the number of the plurality of first evaporation sources 61 are the same, and the number of the plurality of second nozzle portions 72 and the plurality of second evaporation sources 62 are the same.
  • the number of is the same. That is, the number of the plurality of first nozzle portions 71 corresponds to the number of the plurality of first evaporation sources 61, and the number of the plurality of second nozzle portions 72 corresponds to the number of the plurality of second evaporation sources 62. is doing.
  • the first and second nozzle parts 71 and 72 are composed of the same nozzle part.
  • the plurality of first and second nozzle portions 71 and 72 are each formed in a cylindrical shape that is long in the axial direction of the third line L3.
  • the plurality of first and second nozzle portions 71 and 72 each have one or a plurality of jet outlets that jet oxygen gas in the Y-axis direction.
  • the one or more jet nozzles are provided on a part of the peripheral surfaces of the nozzle portions 71 and 72.
  • the plurality of jet outlets may be arranged along the X-axis direction on a part of the peripheral surfaces of the nozzle portions 71 and 72.
  • the oxygen gas having the same flow rate is ejected from the plurality of first nozzle portions 71.
  • oxygen ejected from the first nozzle portion 71 is indicated by a broken line (in FIG. 3, only the ejection form of the gas ejected from the first nozzle portion 71A is shown. The same applies to the gas ejected from the other first nozzle portions 71B to 71E).
  • oxygen gas having the same flow rate is ejected from the plurality of second nozzle portions 72.
  • oxygen ejected from the second nozzle portion 72 is indicated by a broken line (in FIG. 3, only the ejection form of the gas ejected from the second nozzle portion 72A is shown. The same applies to the gas ejected from the other second nozzle portions 72B to 72F).
  • the gas ejected from the first and second nozzle portions 71 and 72 is in contact with the vapor flow at a position immediately above the corresponding evaporation source. If there is a difference in the amount of oxygen in contact with the vapor stream, the degree of oxidation of the evaporation material will be different, which will cause a difference in the transmittance of the resulting film. Therefore, in this embodiment, in order to make the amount of oxygen gas that reacts with the vapor flows from the first and second evaporation sources 61 and 62 uniform, the first and second nozzle portions are described as described below. The amount of gas ejected from 71 and 72 is optimized for each evaporation source.
  • the plurality of first nozzle parts 71 are connected to a gas supply source S such as a gas cylinder via a gas supply line G1.
  • the plurality of second nozzle portions 72 are connected to a gas supply source S such as a gas cylinder via a gas supply line G2.
  • the gas supply source S is common to the gas supply lines G1 and G2, but may be provided separately.
  • the gas supply line G1 has one main pipe connected to the gas supply source S and five branch pipes branched from the main pipe and connected to the nozzle portions 71A to 71E.
  • the gas supply line G2 has one main pipe connected to the gas supply source S and six branch pipes branched from the main pipe and connected to the nozzle portions 72A to 72F.
  • the flow rate adjusting unit V1 is further connected to the main pipe of the gas supply line G1.
  • the flow rate adjustment unit V1 includes, for example, a mass flow controller (MFC) having a flow rate control valve and a flow rate sensor, and is configured to be able to control the flow rate of oxygen ejected from the plurality of first nozzle portions 71.
  • MFC mass flow controller
  • the control of the flow rate adjustment units V1 and V2 is typically performed by the gas supply unit 7 based on a control command from the controller 18.
  • the flow rate adjusting unit V2 having the same configuration as the flow rate adjusting unit V1 is connected to the main pipe of the gas supply line G2.
  • the flow rate adjusting unit V2 is configured to be able to control the flow rate of oxygen ejected from the plurality of second nozzle units 72.
  • the flow rate of oxygen ejected from the plurality of first nozzle portions 71 via the gas supply line G1 is determined according to the distance D1 shown in FIG. Further, the flow rate of oxygen ejected from the plurality of second nozzle portions 72 via the gas supply line G2 is determined according to the distance D2 shown in FIG.
  • the distance D1 shown in FIG. 3 indicates the shortest distance from the outlets of the plurality of first nozzle portions 71 to the positions directly above the corresponding first evaporation sources 61, respectively.
  • the distances D ⁇ b> 1 between the plurality of first nozzle parts 71 and the corresponding plurality of first evaporation sources 61 are equal to each other. Therefore, when an equal amount of oxygen is ejected from the plurality of first nozzle portions 71, an equal amount of oxygen can be reacted with the vapor flows from the corresponding plurality of first evaporation sources 61.
  • the distance D2 shown in FIG. 3 indicates the shortest distance from the outlets of the plurality of second nozzle portions 72 to the position directly above the corresponding plurality of second evaporation sources 62, respectively.
  • the distances D2 between the plurality of second nozzle portions 72 and the corresponding plurality of second evaporation sources 62 are equal to each other. Therefore, when an equal amount of oxygen is ejected from the plurality of second nozzle portions 72, an equal amount of oxygen can be reacted with the vapor flow from the corresponding plurality of second evaporation sources 62.
  • the distance D2 is greater than the distance D1
  • the plurality of second nozzle portions 72 are configured to eject more gas than the amount of gas ejected from the plurality of first nozzle portions 71.
  • the flow rate of oxygen ejected from each nozzle part 71, 72 is the distance D1, D2, the pressure in the vacuum chamber 9 at the time of film formation, the height of the evaporation sources 61, 62 and the nozzle parts 71, 72.
  • the amount of jetting is optimized so that the amount of oxygen supplied from each nozzle unit 71 and 72 is uniform with respect to the vapor flow from each evaporation source 61 and 62.
  • the amount of oxygen ejected from the nozzle portions 71A to 71E constituting the plurality of first nozzle portions 71 is not limited to the case where they are the same as each other, and the nozzle portions constituting the plurality of second nozzle portions 72 are not limited to each other.
  • the oxygen ejection amounts from 72A to 72F are not limited to the same case.
  • the support 8 has an opening 14, a deposition preventing plate 15, and a top plate 16, and is disposed between the cooling roller 4 and the evaporation source array 6.
  • the support body 8 is connected to the inner wall of the vacuum chamber 9 via a support portion (not shown), and is configured to support the plurality of first nozzle portions 71 and the plurality of second nozzle portions 72.
  • the material which comprises the support body 8 is not specifically limited, Typically, it comprises with metal materials, such as stainless steel and copper.
  • the opening 14 is a through-hole provided in a substantially central portion of the top plate 16 and is disposed to face the outer peripheral surface of the cooling roller 4.
  • the size and shape of the opening 14 are not particularly limited, and can be set as appropriate according to the distance to the evaporation source array, the distance to the film 13, and the like. As shown in FIG. 2, the length of the opening 14 in the X-axis direction is shorter than the axial length of the cooling roller 4 and is equal to or shorter than the width of the film 13. In the present embodiment, the opening 14 functions as a mask that defines a film formation region of the film 13.
  • the deposition preventing plate 15 is disposed between the evaporation source array 6 and the gas supply unit 7, and prevents evaporation material evaporated from the evaporation source array 6 from adhering to the gas supply unit 7. Configured as follows.
  • the deposition preventing plate 15 is provided so as to surround the periphery of the opening 14 when viewed from the Z-axis direction.
  • the top plate 16 is disposed close to the cooling roller 4.
  • size and shape of the top plate 16 will not be specifically limited if the opening part 14 can be provided and desired intensity
  • the top plate 16 is connected to the deposition preventing plate 15. Thereby, the support body 8 can be formed integrally.
  • the controller 18 is installed outside the vacuum chamber 9.
  • the controller 18 includes, for example, a computer including a CPU (Central Processing Unit) and a memory, and comprehensively controls each unit of the winding film forming apparatus 1.
  • the controller 18 performs, for example, control of the operation of the vacuum pump P, rotation control of each roller, control of the evaporation amount of the evaporation material in each evaporation source, operation of the gas supply unit 7, control of the flow rate, and the like.
  • the inside of the film forming chamber 12 is evacuated by the vacuum pump P, and the pressure in the film forming chamber 12 is reduced to a predetermined pressure.
  • the unwinding roller 2, the winding roller 3, and the cooling roller 4 rotate at respective predetermined speeds in the directions (clockwise) indicated by the arrows in FIG.
  • the film 13 is continuously unwound clockwise by the unwinding roller 2.
  • the film 13 unwound from the unwinding roller 2 is wound around the outer peripheral surface of the cooling roller 4 at a predetermined holding angle while being guided by the guide roller 5A. Then, the film 13 is taken up by the take-up roller 3 via the guide roller 5 ⁇ / b> B after passing over the evaporation source unit EU ⁇ b> 1 while being cooled by the cooling roller 4.
  • an AC current is supplied from an AC power source (not shown) to the induction coils of the first and second evaporation sources 61 and 62, and is accommodated in the first and second evaporation sources 61 and 62.
  • Aluminum as the evaporation material is heated and evaporated.
  • Oxygen supplied from the gas supply source S through the gas supply lines G1 and G2 is ejected from the first and second nozzle portions 71 and 72 at a predetermined flow rate. Further, the amount of oxygen ejected from the first and second nozzle parts 71 and 72 is controlled by the controller 18 and the flow rate adjusting parts V1 and V2 of the gas supply lines G1 and G2.
  • the plurality of second evaporation sources 62 are arranged on the second line L2 so as to be shifted from the plurality of first evaporation sources 61 by a half pitch. Therefore, as will be described later, a film of evaporation material from the plurality of first evaporation sources 61 is formed in the first region of the film 13, and a film of evaporation material from the plurality of second evaporation sources 62 is the first. Formed in a second region adjacent to the first region.
  • FIG. 4 is a diagram showing the relationship between the arrangement of the evaporation source array 6 and the thickness of the aluminum oxide film formed on the film 13, wherein A is a schematic plan view of the evaporation source array 6, and B is the evaporation source array.
  • 6 is a diagram showing a film thickness distribution in the film width direction of an aluminum oxide film formed by No. 6;
  • the thin solid line indicates the thickness distribution of the film formed by the evaporation material evaporated from the plurality of first evaporation sources 61 (61A to 61E), and the two-dot chain line indicates the plurality of second evaporation sources 62 (62A).
  • the thickness distribution of the film formed by the evaporation material evaporated from ⁇ 62F) is shown, and the thick solid line shows the thickness distribution of the film formed as a whole.
  • a thick film is formed at a position immediately above the first and second evaporation sources 61 and 62 as compared to a position not directly above them. Therefore, if the evaporation sources are arranged in a row, a film having a difference in thickness in the X-axis direction is formed.
  • the plurality of first evaporation sources 61 and the plurality of second evaporation sources 62 are arranged so as to be shifted by a predetermined interval P2 in the Y-axis direction.
  • the first and second evaporation sources 61 and 62 are arranged so as to be shifted from each other by a half pitch.
  • membrane of the evaporation material from the some 1st evaporation source 61 is formed in the 1st area
  • the gas supply unit 7 includes a plurality of first nozzle units 71 that eject gas toward a vapor flow from the plurality of first evaporation sources 61 and a plurality of second evaporation sources. And a plurality of second nozzle portions 72 that eject gas toward the steam flow from 62. Therefore, a desired amount of gas can be supplied to the vapor flow from each evaporation source.
  • FIG. 5A and 5B are schematic plan views showing the arrangement of the gas supply unit 17 (27) and the evaporation source array 6 according to the comparative example.
  • the gas supply unit 17 is composed of a single nozzle common to the respective evaporation sources 61 (61A to 61E) and 62 (62A to 62F).
  • Oxygen is ejected at a flow rate. In this case, the oxygen concentration is higher as the evaporation source is closer to the ejection port, and the oxygen concentration is lower as the distance from the ejection port is longer.
  • the amount of gas supplied to the vapor flow from the evaporation source (second evaporation source 62) far from the gas supply unit 17 is set to the amount of vapor from the evaporation source (first evaporation source 61) close to the gas supply unit 17. Adjustments such as increasing the amount of gas supplied to the stream cannot be made.
  • the gas supply unit 27 includes a plurality of nozzle units 271.
  • the plurality of nozzle portions 271 are arranged on the same straight line, and are each configured to supply oxygen in the Y-axis direction with respect to vapor flows from a plurality of predetermined evaporation sources from one nozzle portion 271.
  • the amount of gas supplied to the steam flow from the first and second evaporation sources 61 and 62 is set for each nozzle portion 271. It cannot be adjusted individually. Therefore, similarly to the example shown in FIG.
  • the amount of gas supplied to the vapor flow from the evaporation source (second evaporation source 62) far from the gas supply unit 27 is set to the evaporation source (first number) close to the gas supply unit 27.
  • the amount of gas supplied to the vapor stream from one evaporation source 61) cannot be increased.
  • FIG. 6A is a schematic plan view of the evaporation source
  • FIG. 6B is a transmittance distribution of aluminum oxide formed using the gas supply units 17 and 27 according to the comparative example
  • FIG. 6C is a gas supply unit according to the present embodiment
  • 7 is a schematic diagram showing transmittance distributions of aluminum oxide formed using No. 7.
  • variation in transmittance in the film width direction (X-axis direction) cannot be suppressed with the configuration of the gas supply unit as in the comparative example.
  • the gas supply units 17 and 27 cannot eject a desired amount of gas to the vapor flows from the first and second evaporation sources 61 and 62, respectively.
  • This causes a difference in the amount of oxygen that reacts with the vapor flow (evaporated aluminum) from the first and second evaporation sources 61 and 62, particularly in the film width direction (X-axis direction).
  • a difference also occurs in the film width direction in the degree of oxidation of the formed aluminum oxide film. That is, when the evaporation material is formed on the film 13 using these gas supply units, a film having a large variation in transmittance in the film width direction is formed.
  • the plurality of first nozzle portions 71 includes a number of nozzle portions corresponding to the plurality of first evaporation sources 61
  • the plurality of second nozzle portions 72 includes a plurality of nozzle portions.
  • the number of nozzle portions corresponding to the second evaporation source 62 is provided. Therefore, the flow rate of oxygen ejected from the first and second nozzle portions 71 and 72 can be individually adjusted for each evaporation source.
  • the first and first The amount of oxygen that reacts with the vapor flow from the two evaporation sources 61 and 62 can be made substantially uniform in the film width direction.
  • membrane in the film width direction can be improved significantly.
  • the winding film forming apparatus 1 As described above, according to the winding film forming apparatus 1 according to this embodiment, variations in thickness and transmittance in the width direction of the film can be suppressed. Therefore, it is possible to stably manufacture a gas barrier film made of an aluminum oxide film in which variations in film thickness and transmittance are suppressed. According to the experiments by the present inventors, it has been confirmed that the variation in transmittance in the film width direction can be suppressed to 3% or less.
  • the first and second nozzle portions 71 and 72 are alternately arranged in a line along the third line L3, so that the gas supply unit 7 can be easily configured. it can.
  • the gas supply part 7 can be integrally formed as one unit, and assemblability is improved.
  • the 1st and 2nd nozzle parts 71 and 72 are arrange
  • the space of the apparatus can be saved.
  • FIG. 7 is a schematic plan view of the evaporation source unit according to the second embodiment of the present invention, and shows the positional relationship between the gas supply unit and the evaporation source array.
  • the configuration different from that of the first embodiment will be mainly described, and the same configuration as that of the above-described first embodiment will be denoted by the same reference numeral, and the description thereof will be omitted or simplified.
  • the configuration of the evaporation source unit is different from that of the first embodiment, and more specifically, the configuration of the gas supply unit in the evaporation source unit is different from that of the first embodiment.
  • the evaporation source unit EU2 of this embodiment includes an evaporation source array 6 and a gas supply unit 7.
  • the gas supply unit 7 includes a plurality of first nozzle units 71, a plurality of second nozzle units 72, and the like. Have The first and second nozzle portions 71 and 72 are supported by the support 8 and are connected to a gas supply source via gas supply lines G1 and G2, respectively.
  • the configuration of the evaporation source array 6 is the same as that of the first embodiment, detailed description thereof is omitted. Since the configuration of the first and second nozzle portions 71 and 72 is also the same as that of the first embodiment, the detailed description thereof is omitted, but the arrangement of the first and second nozzle portions 71 and 72 is the first. Different from the first embodiment.
  • the plurality of first nozzle portions 71 are arranged on the third line L3 parallel to the first line L1.
  • a predetermined interval P4 is placed between the first line L1 and the third line L3 when viewed from the height direction (Z-axis direction).
  • the plurality of second nozzle portions 72 are arranged on a fourth line L4 parallel to the second line L2.
  • the fourth line L4 is hypothetical and is set so as to be located on the downstream side (lower side in FIG. 7) in the transport direction of the film 13 with respect to the second line L2.
  • the fourth line L4 is set at the same height position as the third line L3, and faces the third line L3 in the Y-axis direction.
  • the interval P4 is placed between the second line L2 and the fourth line L4 when viewed from the height direction (Z-axis direction).
  • the plurality of first nozzle portions 71 are arranged at a predetermined interval P3 on the third line L3, as in the first embodiment, and the first A predetermined amount of oxygen gas can be supplied to a position immediately above the evaporation source 61 (61A to 61E).
  • the plurality of second nozzle portions 72 (72A to 72F) are arranged on the fourth line L4 with the interval P3 therebetween, and are located immediately above the second evaporation source 62 (62A to 62F). A fixed amount of oxygen gas can be supplied.
  • the plurality of first nozzle portions 71 are controlled to eject an amount of oxygen gas equal to the amount of oxygen gas ejected from the plurality of second nozzle portions 72.
  • a uniform amount of oxygen is supplied to the vapor flow from each of the evaporation sources 61 and 62, and an aluminum oxide film having a high degree of uniformity in the width direction of the film 13 is formed. It will be.
  • the same operational effects as those in the first embodiment can be obtained. That is, according to the present embodiment, variations in thickness and transmittance in the width direction of the film can be suppressed. Therefore, it is possible to stably manufacture a gas barrier film made of an aluminum oxide film in which variations in film thickness and transmittance are suppressed.
  • FIG. 8 is a schematic plan view of an evaporation source unit according to the third embodiment of the present invention, and shows the positional relationship between the gas supply unit and the evaporation source array.
  • the configuration different from the first embodiment will be mainly described, and the same configuration as the first embodiment described above will be denoted by the same reference numeral, and the description thereof will be omitted or simplified.
  • the configuration of the evaporation source unit is different from that of the first embodiment, and more specifically, the configuration of the gas supply unit in the evaporation source unit is different from that of the first embodiment.
  • the evaporation source unit EU3 of the present embodiment includes an evaporation source array 6 and a gas supply unit 7.
  • the gas supply unit 7 includes a plurality of first nozzle units 71, a plurality of second nozzle units 72, and the like. Have The first and second nozzle portions 71 and 72 are supported by the support 8 and are connected to a gas supply source via gas supply lines G1 and G2, respectively.
  • the configuration of the evaporation source array 6 is the same as that of the first embodiment, detailed description thereof is omitted. Since the configuration of the first and second nozzle portions 71 and 72 is also the same as that of the first embodiment, the detailed description thereof is omitted, but the arrangement of the first and second nozzle portions 71 and 72 is the first. Different from the first embodiment.
  • the plurality of first nozzle portions 71 are arranged on the third line L13 parallel to the second line L2.
  • the third line L13 is virtually set between the second line L2 and the cooling roller 4.
  • the plurality of first nozzle portions 71 are respectively arranged at positions that do not face the plurality of second evaporation sources 62 (62A to 62F) on the second line L2 when viewed from the cooling roller 4. .
  • the plurality of second nozzle portions 72 (72A to 72F) are arranged on a fourth line L14 parallel to the first line L1.
  • the fourth line L14 is virtually set at the same height position as the third line L3 between the first line L1 and the cooling roller 4.
  • the plurality of second nozzle portions 72 are respectively arranged at positions that do not face the plurality of first evaporation sources 61 (61A to 61E) on the first line L1 when viewed from the cooling roller 4. .
  • the plurality of first nozzle portions 71 are arranged on the third line L13 at a predetermined interval (P3), as in the first embodiment, A predetermined amount of oxygen gas can be supplied to a position immediately above the first evaporation source 61 (61A to 61E).
  • the plurality of second nozzle portions 72 (72A to 72F) are arranged on the fourth line L14 with the interval (P3) therebetween, and are positioned immediately above the second evaporation source 62 (62A to 62F). It is possible to supply a predetermined amount of oxygen gas.
  • the plurality of first nozzle portions 71 are controlled to eject an amount of oxygen gas equal to the amount of oxygen gas ejected from the plurality of second nozzle portions 72.
  • a uniform amount of oxygen is supplied to the vapor flow from each of the evaporation sources 61 and 62, and an aluminum oxide film having a high degree of uniformity in the width direction of the film 13 is formed. It will be.
  • the same operational effects as those in the first embodiment can be obtained. That is, according to the present embodiment, variations in thickness and transmittance in the width direction of the film can be suppressed. Therefore, it is possible to stably manufacture a gas barrier film made of an aluminum oxide film in which variations in film thickness and transmittance are suppressed.
  • FIG. 10 is a schematic plan view of an evaporation source unit according to the fourth embodiment of the present invention, and shows the positional relationship between the gas supply unit and the evaporation source array.
  • the configuration different from that of the first embodiment will be mainly described, and the same configuration as that of the above-described first embodiment will be denoted by the same reference numeral, and the description thereof will be omitted or simplified.
  • a plurality of first nozzle portions 71 (71A to 71E) and a plurality of second nozzle portions 72 (72A to 72F) are respectively provided on the third line L3. It is common to the first embodiment in that it is arranged.
  • the gas supply unit 70 of the present embodiment controls the amount of gas (oxygen) ejected from the plurality of first nozzle portions 71 with the first line L1 as a unit, and the second line L2 This is different from the first embodiment in that it is configured to control the amount of gas (oxygen) ejected from the plurality of second nozzle portions 72 as a unit.
  • the amount of steam generated from each of the evaporation sources 61 (61A to 61E) and 62 (62A to 62F) is not limited to being uniform, and some of the evaporation sources 61 and 62 are connected to other evaporation sources. Steam production may vary. In the latter case, when the amount of gas ejected from each nozzle portion 71, 72 is the same, the degree of oxidation of the vapor flow generated from the partial evaporation source is the vapor flow generated from another evaporation source. It will be different from the degree of oxidation. If it becomes like this, it will become difficult to suppress the dispersion
  • the adjustment part V is provided individually. This makes it possible to individually control the amount of gas ejected from each nozzle portion 71, 72, and to supply an optimal amount of gas to each evaporation source 61, 62 in units of lines L1, L2. It becomes possible.
  • the control of each flow rate adjusting unit V is typically performed by the gas supply unit 70 based on a control command from the controller 18 (FIG. 1).
  • the causes of variations in the amount of vapor at each evaporation source include variations in power input to the crucible, variations in the amount of evaporation material in the crucible, and the like.
  • the reason why the amount of gas ejected from the nozzle portions 71 and 72 is set as the line unit of each of the evaporation sources 61 and 62 is that the distance between each of the nozzle portions 71 and 72 and each of the evaporation sources 61 and 62. This is due to the difference in one-dimensional quantities such as (far / near).
  • the ratio of the amount of vapor for each evaporation source is superimposed in addition to the difference in distance (however, for example, a slight variation of about ⁇ 5%) May be).
  • the lines L1 in units of evaporation sources, the lines L1.
  • the amount of gas can be optimized in units of L2, and therefore variations in film thickness and transmittance in the width direction of the film can be effectively suppressed.
  • the variation in the amount of vapor at each evaporation source can be confirmed, for example, by a preliminary film formation process in advance.
  • the preliminary film forming process is not particularly limited.
  • the film thickness distribution on the sample can be performed by performing a film forming process on an appropriate sample such as a film in a state where the gas supply from the nozzles 71 and 72 is stopped. (For example, within ⁇ 5%).
  • gas oxygen
  • the transmittance distribution of the film is adjusted by the amount of gas ejection.
  • the plurality of first and second nozzle portions 71 and 72 are each constituted by a single independent nozzle portion.
  • the parts may be provided integrally with each other.
  • FIG. 9 is an enlarged schematic plan view showing a part of the arrangement of the gas supply unit 57 and the evaporation source array 6 in a modification of the present invention.
  • the gas supply unit 57 includes a plurality of first nozzle portions 571 and a plurality of second nozzle portions 572.
  • the plurality of first and second nozzle portions 571 and 572 are configured by through holes (indicated by substantially circular black circles) formed in the gas pipe 570.
  • the gas pipe 570 has a long cylindrical shape, and has a passage portion for allowing oxygen to pass therethrough.
  • the shape of the gas pipe 570 is not limited thereto, and for example, a gas pipe having an arbitrary shape such as a quadrangular prism shape can be used.
  • a gas supply source such as a gas cylinder (not shown) installed outside the vacuum chamber 9 is connected to the gas pipe 570. The oxygen gas supplied from the gas supply source is ejected from the plurality of first and second nozzle portions 571 and 572 through the gas pipe.
  • the plurality of first nozzle portions 571 each have two through holes having the same size and shape.
  • the two through holes are provided along a part of the peripheral surface of the gas pipe 570 along the X-axis direction, and supply oxygen gas directly above the first evaporation source 61 (61A, 61B).
  • each of the plurality of second nozzle portions 572 has three through holes having the same size and shape as the through holes of the plurality of first nozzle portions 571.
  • the three through holes are provided in part of the peripheral surface of the gas pipe 570 along the X-axis direction, and supply oxygen gas directly above the second evaporation source 62 (62A, 62B).
  • the number of through holes of the plurality of first nozzle portions 571 is larger than the number of through holes of the plurality of second nozzle portions 572. Therefore, the amount of gas ejected from the plurality of first nozzle portions 571 is larger than the amount of gas ejected from the plurality of second nozzle portions 572.
  • the amount of gas ejected from the plurality of first and second nozzle portions 571 and 572 is adjusted by changing the number of through holes, but is not limited thereto. It is also possible to adjust the amount of gas ejected from the plurality of first and second nozzle portions 571 and 572 by changing not only the number of through holes but also the size and shape.
  • another gas supply line may be provided in the second nozzle portion (72A, 72F) at both ends in the film width direction (X-axis direction) of the gas supply portion 7, or the second The number and area of the through holes of the nozzle portions 72A and 72F may be increased.
  • the second nozzle portions 72A and 72F are configured to eject more gas than the amount of gas ejected from the other second nozzle portions (72B to 72E).
  • FIG. 3 the case of the first embodiment (FIG. 3) will be described.
  • the second nozzle portions 72B to 72E have two adjacent nozzle portions (for example, the second nozzle portion 72B is adjacent to the second nozzle portions 71A and 71B).
  • the second nozzle portions 72A and 72F have only one adjacent nozzle portion (for example, only the second nozzle portion 71A is adjacent to the second nozzle portion 72A).
  • Each of the second nozzle portions 72 emits oxygen gas directly above the corresponding evaporation source 62, and a part of the released oxygen flows from the evaporation source adjacent to the corresponding evaporation source 62. May come into contact.
  • the oxygen gas is released from the second nozzle portion 72B directly above the evaporation source 62B, and the oxygen gas comes into contact with the vapor flow from the evaporation source 61A or 61B adjacent to the evaporation source 62B. There is.
  • the amount of oxygen gas in contact with the vapor flow from the second evaporation sources 62B to 62E may be larger than the amount of oxygen gas in contact with the vapor flow from the first evaporation sources 61A, 61F. .
  • the first and second evaporation sources 61 are provided. , 62 can further suppress variations in the amount of oxygen gas that reacts with the steam flow in the X-axis direction. Thereby, the dispersion
  • membrane formed can be suppressed more.
  • evaporation material although aluminum was used as an evaporation material, it is not restricted to this.
  • Other evaporating materials include metals such as magnesium, chromium, iron, nickel, copper, zinc, indium, tin, titanium, or lead, alloys of these metals with metalloids such as silicon, or oxides and carbides thereof.
  • a metal compound such as nitride, or a mixture thereof can be used.
  • the number of the plurality of first evaporation sources 61 is five and the number of the plurality of second evaporation sources 62 is six.
  • the present invention is not limited to this. As long as the number of the plurality of first evaporation sources 61 is one less than, the same as, or one more than the number of the plurality of second evaporation sources 62, the number of the first and second evaporation sources 61, 62 is increased. A staggered arrangement can be realized.
  • the evaporation material is evaporated by the induction heating method, but the present invention is not limited to this.
  • various heating methods such as a resistance heating method and an electron beam heating method can be used.
  • the evaporation sources are arranged in two rows (the first line L1 and the second line L2), but the present invention is not limited to this.
  • the evaporation sources can be arranged in three or more rows.
  • the gas ejected from each nozzle portion is oxygen, but is not limited thereto. Any reactive gas that reacts with the evaporation material may be used. For example, nitrogen or a mixed gas of oxygen and nitrogen can be used. Further, a rare gas such as argon may be mixed with these gases.
  • the number of the plurality of first nozzle parts 71 and the number of the plurality of first evaporation sources 61 are the same, and the number of the plurality of second nozzle parts 72 and the plurality of second nozzle parts 72 are the same.
  • the number of evaporation sources 62 is the same, but is not limited thereto. For example, two nozzle portions may be assigned to one evaporation source, or different numbers of nozzle portions may be assigned to the plurality of first evaporation sources 61 and the plurality of second evaporation sources 62, respectively. Good.
  • the outlets of the first and second nozzle portions 71 and 72 are directed in the Y-axis direction.
  • oxygen can be appropriately supplied to the vapor flow from each evaporation source, Not limited to this.
  • the gas may be ejected in a direction inclined obliquely toward the cooling roller 4 side or the evaporation source array 6 side with respect to the Y-axis direction.
  • the size and shape of the ejection holes are the same for each nozzle, but can be set as appropriate according to the desired supply amount of oxygen.
  • the first line L1 is positioned upstream of the second line L2 with respect to the transport direction of the film 13, but the first line L1 is downstream of the second line L2. It may be located on the side. However, in this case, the third line L3 is positioned on the downstream side of the first line L1, and the fourth line L4 is positioned on the upstream side of the second line L2.
  • the evaporation source unit EU is configured as an evaporation source in a roll-up film forming apparatus.
  • a substrate to be processed such as a glass substrate or a semiconductor substrate is formed by a vacuum evaporation method. It may be configured as an evaporation source for passing film formation or stationary film formation.
  • an aluminum oxide film-deposited film in which variations in film thickness and transmittance in the width direction of the film are suppressed.
  • Such an aluminum oxide film-deposited film is useful as a packaging film for packaging articles that require shielding of various gases such as water vapor and carbon dioxide.
  • such an aluminum oxide film-deposited film can be used as a packaging film for packaging articles such as foods and drinks, pharmaceuticals, cosmetics, chemicals, and electronic parts.

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CN111206224A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206203A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206207A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206205A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206221A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 一种镀膜设备及镀膜方法
CN111206220A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 一种镀膜设备及镀膜方法
CN111676454A (zh) * 2020-08-04 2020-09-18 光驰科技(上海)有限公司 一种节省真空镀膜室内空间的蒸发源配置结构及其设计方法
CN111676454B (zh) * 2020-08-04 2023-09-05 光驰科技(上海)有限公司 一种节省真空镀膜室内空间的蒸发源配置结构及其设计方法

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CN107406969A (zh) 2017-11-28
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KR102023258B1 (ko) 2019-09-19
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