WO2016188180A1 - 一种柔性显示母板及柔性显示面板的制作方法 - Google Patents

一种柔性显示母板及柔性显示面板的制作方法 Download PDF

Info

Publication number
WO2016188180A1
WO2016188180A1 PCT/CN2016/075798 CN2016075798W WO2016188180A1 WO 2016188180 A1 WO2016188180 A1 WO 2016188180A1 CN 2016075798 W CN2016075798 W CN 2016075798W WO 2016188180 A1 WO2016188180 A1 WO 2016188180A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
flexible
display
substrate
region
Prior art date
Application number
PCT/CN2016/075798
Other languages
English (en)
French (fr)
Inventor
赵瑾荣
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/533,816 priority Critical patent/US10211238B2/en
Publication of WO2016188180A1 publication Critical patent/WO2016188180A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/304—Insulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08—Dimensions, e.g. volume
    • B32B2309/10—Dimensions, e.g. volume linear, e.g. length, distance, width
    • B32B2309/105—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/919—Delaminating in preparation for post processing recycling step
    • Y10S156/922—Specified electronic component delaminating in preparation for recycling
    • Y10S156/924—Delaminating display screen, e.g. cathode-ray, LCD screen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
    • Y10T156/1116—Using specified organic delamination solvent

Definitions

  • Embodiments of the present disclosure relate to a flexible display motherboard and a method of fabricating the flexible display panel.
  • the conventional flexible display panel is mainly produced by carrying a flexible substrate on the carrier substrate as a carrier, forming a display device on the flexible substrate, and finally separating the flexible substrate from the carrier substrate to obtain flexibility. Display panel.
  • a flexible substrate 11 is formed on a carrier substrate 10, and a display device 12 is formed on the flexible substrate 11, and finally the flexible substrate 11 is separated from the carrier substrate 10 to obtain flexibility including a flexible substrate. Display panel.
  • the techniques for separating a flexible substrate from a carrier substrate in the conventional art mainly include mechanical separation and laser separation.
  • Mechanical separation refers to the use of a cutter or the like to cut a flexible substrate from a carrier substrate to separate it. This process mainly has problems such as more microparticles, unclean peeling, and serious damage to the flexible substrate.
  • laser separation refers to the separation of a flexible substrate from a carrier substrate by laser irradiation. Laser stripping has the advantages of less microparticles, higher process precision, and higher yield than mechanical stripping.
  • laser separation currently has the following problems: 1. High heat during laser irradiation causes carbonization in the irradiated area of the substrate. , affecting the transmittance of the substrate; 2, the laser will penetrate the thin film transistor of the substrate to illuminate the display area, causing threshold voltage drift, etc., thereby reducing the performance of the thin film transistor.
  • Embodiments of the present disclosure provide a flexible display mother board and a method of fabricating a flexible display panel, wherein a flexible display panel is formed by the flexible display mother board, and damage to the flexible display panel is small when the flexible substrate is separated.
  • At least one embodiment of the present disclosure provides a flexible display motherboard including: a carrier substrate and a flexible display panel unit formed on the carrier substrate, wherein the flexible display panel is The element includes a flexible substrate formed on the carrier substrate and a display area and a peripheral area on the flexible substrate, wherein a display device is formed in the display area, the peripheral area surrounding the display area;
  • the flexible display mother board further includes a dissolution layer between the carrier substrate and the flexible substrate, the dissolution layer being formed at least in a region corresponding to the display region, the dissolution layer being soluble in a solvent.
  • At least one embodiment of the present disclosure provides a method of fabricating a flexible display panel including a flexible substrate and a display area and a peripheral area on the flexible substrate, the peripheral area surrounding the display Region, the method includes:
  • the dissolving layer is dissolved with a dissolving agent.
  • Embodiments of the present disclosure provide a flexible display mother board, a flexible display unit formed on a flexible display mother board including a flexible substrate and a display area and a peripheral area on the flexible substrate, in the display area Forming a display device, the peripheral region surrounding the display region, wherein, in a region corresponding to the display region and the peripheral region, a dissolving layer is disposed between the flexible substrate of the flexible display panel unit and the carrier substrate, in the flexible lining When the bottom is separated from the carrier substrate, the dissolving agent is used to dissolve the dissolving layer, thereby separating the entire flexible display panel from the carrier substrate without mechanical peeling or laser irradiation, thereby avoiding damage to the flexible substrate.
  • 1 is a schematic view of a conventional laser lifted flexible display substrate
  • FIG. 2 is a schematic view of a flexible display motherboard in accordance with an embodiment of the present disclosure
  • FIG. 3 is a schematic view of a flexible display motherboard in accordance with another embodiment of the present disclosure.
  • FIG. 4 is a schematic view of a flexible display motherboard in accordance with another embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of a method of fabricating a flexible display panel according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of a method of fabricating a flexible display panel according to another embodiment of the present disclosure.
  • FIG. 7 is a schematic view of a region where a flexible display panel is not formed with a dissolution layer by laser irradiation
  • Figure 8 is a schematic view of dissolving a dissolution layer using a dissolving agent
  • FIG. 9 is a schematic diagram of a method of fabricating a flexible display panel according to another embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of a method of fabricating a flexible display panel according to another embodiment of the present disclosure.
  • FIG. 11 is a schematic diagram of a method of fabricating a flexible display panel according to another embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of a method of fabricating a flexible display panel according to an embodiment of the present disclosure.
  • a flexible display panel is generally formed on a carrier substrate, that is, a flexible display mother board in the present disclosure, on which a plurality of flexible display panel units are formed, and then the flexible display mother board is cut and separated.
  • a flexible display panel unit formed on a flexible display mother board is taken as an example for detailed description.
  • a flexible display mother board including: a carrier substrate and a flexible display panel unit formed on the carrier substrate, as shown in FIG. 2, the flexible display panel unit includes a flexible substrate 11 and is located at a display area a and a peripheral area b on the flexible substrate, in which the display device 12 is formed, the peripheral area b surrounding the display area a; the flexible display mother board further comprising a carrier substrate 10 and The dissolving layer 13 between the flexible substrates 11, the dissolving layer 13 is formed at least in a region corresponding to the display region a, and the dissolving layer 13 is soluble in the dissolving agent.
  • the flexible display panel unit includes a display area and a peripheral area surrounding the display area, wherein the display area is formed with a TFT (Thin Film Transistor)
  • the display area is configured to display images
  • the peripheral area is usually configured as a binding circuit.
  • the dissolving layer is formed at least in a region corresponding to the display region, that is, the dissolving layer may be formed in a region corresponding to the display region, or may be formed in a region corresponding to the display region and the peripheral region as shown in FIG. in.
  • the dissolving layer can be dissolved in the solubilizing agent, that is, the dissolving layer can be dissolved by a specific solution, wherein the dissolving agent is related to the material of the dissolving layer.
  • the embodiment of the present disclosure is described by taking the dissolution layer as an epoxy resin.
  • the epoxy resin can be dissolved in an epoxy resin dissolving agent synthesized from dichloromethane, formic acid, phenol, and sulfuric acid.
  • a flexible display unit formed on a carrier substrate includes a flexible substrate formed on a carrier substrate and a display area and a peripheral area on the flexible substrate, A display device is formed in the display area, and a dissolving layer is disposed between the flexible display mother board and the flexible display panel unit in a region corresponding to the display area and the peripheral area, and when the flexible substrate is separated from the carrier substrate, the solvent is used The dissolution layer dissolves, so that the entire flexible display panel is separated from the carrier substrate without mechanical peeling or laser irradiation to avoid damage to the flexible substrate.
  • the flexible display mother board further includes a thermal insulation layer between the dissolution layer and the carrier substrate and/or a thermal insulation layer between the dissolution layer and the flexible substrate.
  • the heat insulating layer may be disposed only between the dissolution layer and the carrier substrate, or the heat insulating layer may be disposed only between the dissolution layer and the flexible substrate, and the latter may also be in the dissolution layer 13 and the flexible substrate 11.
  • a heat insulating layer 14 is formed between the dissolution layer 13 and the carrier substrate 10, as shown in FIG.
  • the sum of the thicknesses of the dissolving layer and the insulating layer is no more than 5 microns.
  • the flexible substrate is relatively flat.
  • the insulating layer is formed of a nanoporous insulating material.
  • Nanoporous insulation materials are based on low-density and super-porous structures. Theoretically, the thermal conductivity is close to zero.
  • the thermal insulation layer formed by nanoporous insulation is smaller than the thermal conductivity of air.
  • the insulating layer may be formed of a silicon oxide nanoporous insulating material.
  • the dissolution layer 13 is formed in a region corresponding to the display region a and a portion of the peripheral region b. If the dissolving layer is formed in the region corresponding to the display region, when the flexible substrate is separated from the carrier substrate, the flexible substrate not forming the dissolving layer is first peeled off by the laser, and the dissolving layer is separated by the solution, thereby making the entire flexible display The panel is separated from the carrier substrate.
  • the laser irradiation display area affects the display device in the display area such as TFT Yes, therefore, in one embodiment of the present disclosure, such that the dissolution layer is formed in a region corresponding to the display region and a portion of the peripheral region, the laser light illuminates only the peripheral region without illuminating the display region, thereby ensuring the display device of the display region. performance.
  • the side of the dissolution layer 13 is covered by the flexible substrate 11, as shown in FIGS. 2 and 3.
  • the flexible display mother board further includes a protective layer 15 covering at least the side of the dissolution layer 13, as shown in FIG.
  • the protective layer covers the sides of the dissolution layer to prevent the dissolution layer from being eroded by other solutions when the display device is formed.
  • the protective layer covers only the side of the dissolution layer, and in addition, the protective layer may be a portion that further covers the upper surface of the dissolution layer in consideration of a manufacturing process.
  • At least one embodiment of the present disclosure provides a method for fabricating a flexible display panel, as shown in FIG. 5, including:
  • Step 101 Form a dissolution layer at least in a region of the carrier substrate corresponding to the display region forming the flexible display panel, wherein the dissolution layer is soluble in the solvent.
  • the dissolution layer may be an epoxy resin, which is thermosetting and can be cured by heating or baking.
  • Step 102 forming a flexible substrate on the carrier substrate, and forming a display device in the display region of the flexible substrate, wherein the flexible substrate covers at least the upper surface of the dissolution layer.
  • the dissolution layer is formed in a region corresponding to the display region and the peripheral region, and the flexible substrate covers the upper surface of the dissolution layer.
  • the dissolving layer is formed in a region corresponding to the display region of the flexible display panel and a portion of the peripheral region, and a flexible substrate is formed on the carrier substrate, and the flexible substrate may cover the upper surface and the side of the dissolving layer .
  • Step 103 dissolving the dissolved layer with a dissolving agent.
  • the dissolution layer is dissolved using a solvent to separate the flexible display panel from the carrier substrate.
  • the dissolving agent varies depending on the material of the dissolving layer.
  • a dissolution layer is formed at a boundary between a carrier substrate and a flexible substrate at a display region and/or a peripheral region, when the flexible substrate is separated from the carrier substrate, The dissolving agent dissolves the dissolving layer so that the entire flexible display panel is separated from the carrier substrate without mechanical peeling or laser irradiation to avoid damage to the flexible substrate.
  • the dissolving layer is formed in an area corresponding to the display area and the partial peripheral area; after the step 102, and before the step 103, as shown in FIG. 6, the method further includes:
  • Step 104 Irradiating a region where the dissolving layer is not formed from a side where the flexible substrate is not formed on the carrier substrate by using a laser.
  • the laser illuminates the region where the flexible display mother plate does not form the dissolution layer, so that the flexible substrate of the region where the dissolution layer is not formed is separated from the carrier substrate.
  • the separation of the flexible substrate from the carrier substrate can be as shown in FIG.
  • the dissolution layer is formed to correspond to the display region and a portion of the peripheral region.
  • the region where the dissolution layer is not formed corresponds to the peripheral region, and the region where the dissolution layer is not formed is irradiated with laser light to separate the flexible substrate from the carrier substrate, so that the solvent can be in contact with the dissolution layer to dissolve the dissolution layer, thereby
  • the flexible substrate is peeled off from the carrier substrate. Since the region where the dissolution layer is not formed corresponds to the peripheral region, the laser light illuminates only the peripheral region without illuminating the display region, thereby ensuring the performance of the display device of the display region.
  • the manufacturing method further includes:
  • Step 105 Form a heat insulating layer at least in a region of the carrier substrate corresponding to the display region where the flexible display panel is formed.
  • the above step 101 may be: forming a dissolution layer on the heat insulation layer.
  • the formed flexible display mother board further includes a heat insulating layer between the dissolution layer and the carrier substrate.
  • the manufacturing method further includes: Step 106, forming a heat insulation layer on the dissolved layer.
  • the formed flexible display mother board includes a heat insulating layer between the dissolution layer and the carrier substrate and a heat insulating layer between the dissolution layer and the flexible substrate.
  • the dissolving layer is formed in an area corresponding to the display area and the partial peripheral area; as shown in FIG. 11, after the above step 101, and before the step 102, the manufacturing method further includes :
  • Step 107 forming a protective layer on the carrier substrate, and the protective layer covers the side surface of the dissolution layer.
  • the formed flexible display mother board is as shown in FIG. 4, and the side of the dissolution layer 13 is covered by the protective layer 15.
  • the step 104 may be: irradiating the protective layer from the side of the carrier substrate where the flexible substrate is not formed by using a laser to separate the protective layer from the carrier substrate.
  • the dissolution layer can be dissolved using a solvent to separate the flexible display panel from the carrier substrate.
  • the manufacturing method of the above-described flexible display mother board according to an embodiment of the present disclosure is explained in order to explain the inventive concept of the present disclosure only by the fabrication of the layer structure related to the inventive concept of the present disclosure, and the flexible display panel includes various films. Or the layer structure, the present disclosure does not elaborate on the manufacturing method of the flexible display panel.
  • a method for fabricating a flexible display panel according to an embodiment of the present disclosure includes:
  • Step 201 cleaning the carrier substrate and drying.
  • Step 202 Form a heat insulation layer in a region of the carrier substrate corresponding to the display region and a portion of the peripheral region.
  • an organosilicon compound, a silica sol or the like is prepared into a nanoporous silicon heat insulating material by a sol-gel method or a silica aerogel method as a material of the heat insulating layer.
  • the insulating layer can be formed by knife coating or spraying.
  • the thickness of the insulating layer can be controlled by controlling flow parameters and speed, etc. during coating.
  • Step 203 forming an epoxy resin dissolution layer on the heat insulation layer.
  • Step 204 forming a heat insulation layer on the epoxy resin dissolution layer. This step can be performed with reference to step 202 above.
  • the thickness of the dissolution layer and the insulation layer is no later than 5 microns.
  • Step 205 forming a flexible substrate on the carrier substrate.
  • An imide is coated on the carrier substrate on which the above-mentioned dissolving layer and the heat insulating layer are formed to form a flexible substrate.
  • the thickness of the flexible substrate can be adjusted by adjusting the size of the flip-book slit in a coating manner.
  • the flexible substrate has a thickness of 10-12 ⁇ m.
  • Step 206 forming a buffer layer on the flexible substrate.
  • a buffer layer formed of silicon nitride, silicon oxide or a composite thereof may be deposited on the flexible substrate using a plasma enhanced chemical vapor deposition apparatus.
  • the thickness of the buffer layer can generally be from 1000 to 3000 angstroms.
  • the buffer layer is mainly used to reduce the surface roughness of the film layer and to block the influence of water and oxygen on display devices such as TFTs which are subsequently prepared.
  • Step 207 Form a display device in a region of the flexible substrate corresponding to the display region.
  • the display device includes a thin film transistor or the like.
  • Step 208 irradiating a region where the dissolving layer is not formed from a side where the flexible substrate is not formed on the carrier substrate by using a laser, as shown in FIG.
  • Step 209 dissolving the dissolved layer with a dissolving agent, as shown in FIG.
  • the dissolving layer flexible substrate and the carrier substrate are separated in a region where the dissolving layer is not formed, and the dissolving agent may contact the dissolving layer and dissolve the dissolving layer, thereby separating the flexible display panel from the carrier substrate.
  • a region where the dissolution layer is not formed is laser-applied After the irradiation, the flexible substrate is separated from the carrier substrate, so that the solvent can be contacted with the dissolution layer and dissolved to dissolve the dissolution layer. It is avoided that the laser illuminates the display area to damage the performance of the light-emitting device such as a TFT of the display area.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

一种柔性显示母板及其制作方法，柔性显示母板包括：载体基板(10)以及形成在其上的柔性显示面板单元，其中，柔性显示面板单元包括形成在载体基板(10)上的柔性衬底(11)以及位于柔性衬底(11)上的显示区域和周边区域，在显示区域中形成显示器件(12)，周边区域围绕显示区域；柔性显示面板单元还包括位于载体基板(10)和柔性衬底(11)之间的溶解层(13)，溶解层(13)至少形成在对应于显示区域的区域中，溶解层(13)可溶解于溶解剂。

Description

一种柔性显示母板及柔性显示面板的制作方法 技术领域
本公开的实施例涉及一种柔性显示母板及柔性显示面板的制作方法。
背景技术
随着显示技术的发展，柔性显示装置获得越来越广泛的应用。由于柔性显示面板采用柔性衬底，惯常的柔性显示面板的制作主要是以载体基板作为载具承载着柔性衬底，在柔性衬底上形成显示器件，最后将柔性衬底和载体基板分离得到柔性显示面板。
如图1所示，在载体基板10上形成柔性衬底11，再在所述柔性衬底11上形成显示器件12，最后将柔性衬底11与载体基板10分离，得到包括柔性衬底的柔性显示面板。
惯常技术中将柔性衬底与载体基板分离的技术主要包括机械分离和激光分离两种。机械分离指的是采用刀具等将柔性衬底从载体基板上切开，使其分离，这种工艺主要存在微颗粒较多、剥离不干净、对柔性衬底损伤严重等问题。如图1所示，激光分离指的是采用激光照射使得柔性衬底与载体基板分离。激光剥离相对于机械剥离具有微颗粒较少、工艺精度高、良率较高等优点，但激光分离目前存在以下问题点：1、激光照射时的高热量会导致基板被照射的区域出现炭化的现象，影响基板的穿透率；2、激光照射时会穿透基板照射显示区域的薄膜晶体管，引起阈值电压漂移等，进而降低薄膜晶体管的性能。
发明内容
本公开的实施例提供一种柔性显示母板及柔性显示面板的制作方法，通过所述柔性显示母板形成柔性显示面板，在柔性衬底分离时对柔性显示面板的损害小。
本公开的至少一个实施例提供了一种柔性显示母板，包括：载体基板以及形成在所述载体基板上的柔性显示面板单元，其中，所述柔性显示面板单 元包括形成在所述载体基板上的柔性衬底以及位于所述柔性衬底上的显示区域和周边区域，在所述显示区域中形成显示器件，所述周边区域围绕所述显示区域；所述柔性显示母板还包括位于所述载体基板和所述柔性衬底之间的溶解层，所述溶解层至少形成在对应于所述显示区域的区域中，所述溶解层可溶解于溶解剂。
本公开的至少一个实施例提供了一种柔性显示面板的制作方法，所述柔性显示面板包括柔性衬底以及位于所述柔性衬底上的显示区域和周边区域，所述周边区域围绕所述显示区域，所述方法包括：
至少在载体基板对应于形成柔性显示面板的显示区域的区域内形成溶解层；
在所述载体基板上形成柔性衬底以及位于所述显示区域的显示器件，其中，所述柔性衬底至少覆盖所述溶解层的上表面；
用溶解剂溶解所述溶解层。
本公开的实施例提供了一种柔性显示母板，形成在柔性显示母板上的柔性显示单元包括柔性衬底以及位于所述柔性衬底上的显示区域和周边区域，在所述显示区域中形成显示器件，所述周边区域围绕所述显示区域，其中，若在对应于显示区域以及周边区域的区域中，在柔性显示面板单元的柔性衬底和载体基板之间设置溶解层，在柔性衬底与载体基板分离时，利用溶解剂溶解溶解层，从而使整个柔性显示面板与载体基板分开，无需机械剥离或激光照射，避免其对柔性衬底产生损伤。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为惯常的激光剥离柔性显示衬底示意图；
图2为根据本公开的一个实施例的柔性显示母板示意图；
图3为根据本公开的另一个实施例的柔性显示母板示意图；
图4为根据本公开的另一个实施例的柔性显示母板示意图；
图5为根据本公开的一个实施例的柔性显示面板制作方法示意图；
图6为根据本公开的另一个实施例的柔性显示面板制作方法示意图；
图7为采用激光照射柔性显示面板未形成溶解层的区域的示意图；
图8为采用溶解剂溶解溶解层的示意图；
图9为根据本公开的另一个实施例的柔性显示面板制作方法示意图；
图10为根据本公开的另一个实施例的柔性显示面板制作方法示意图；
图11为根据本公开的另一个实施例的柔性显示面板制作方法示意图；以及
图12为根据本公开的一个实施例的柔性显示面板制作方法示意图。
附图标记：
10-载体基板；11-柔性衬底；12-显示器件；13-溶解层；14-隔热层；15-保护层。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
需要说明的是，为了实现批量生产，制作柔性显示面板通常是在载体基板，即本公开中的柔性显示母板，上形成多个柔性显示面板单元，之后对柔性显示母板进行切割，分离出各个柔性显示面板单元。在本公开的实施例中，以柔性显示母板上形成的一个柔性显示面板单元为例进行详细说明。
本公开的一个实施例提供了一种柔性显示母板，包括：载体基板以及形成在载体基板上的柔性显示面板单元，如图2所示，柔性显示面板单元包括柔性衬底11以及位于所述柔性基板上的显示区域a和周边区域b，在所述显示区域a中形成显示器件12，所述周边区域b围绕所述显示区域a；所述柔性显示母板还包括设置在载体基板10和柔性衬底11之间的溶解层13，溶解层13至少形成在对应于显示区域a的区域中，溶解层13可溶解于溶解剂。
需要说明的是，柔性显示面板单元包括显示区域和围绕显示区域的周边区域，其中，显示区域形成有TFT(Thin Film Transistor，薄膜场效应晶体管) 等显示器件，显示区域配置为显示图像，周边区域通常配置为绑定电路等。溶解层至少形成在对应于显示区域的区域中，即溶解层可以是形成在对应于显示区域的区域中，还可以是如图2所示，溶解层形成在对应于显示区域以及周边区域的区域中。溶解层可溶解于溶解剂，即溶解层可以被特定的溶液溶解，其中，溶解剂跟溶解层的材料有关。本公开的实施例以溶解层为环氧树脂为例进行说明，环氧树脂能溶解于由二氯甲烷、甲酸、苯酚和硫酸合成的环氧树脂溶解剂。
在根据本公开实施例的一种柔性显示母板中，形成在载体基板上的柔性显示单元包括形成在载体基板上的柔性衬底以及位于所述柔性衬底上的显示区域和周边区域，在显示区域中形成有显示器件，在柔性显示母板和柔性显示面板单元之间，在对应于显示区域以及周边区域的区域中设置溶解层，在柔性衬底与载体基板分离时，利用溶解剂将溶解层溶解，从而使得整个柔性显示面板与载体基板分开，无需机械剥离或激光照射，避免其对柔性衬底产生损伤。
在本公开的一个实施例中，柔性显示母板还包括位于溶解层和载体基板之间的隔热层和/或位于溶解层和柔性衬底之间的隔热层。例如，隔热层可以仅设置在溶解层和载体基板之间，或者，隔热层可以仅设置在溶解层和柔性衬底之间，后者，还可以在溶解层13与柔性衬底11之间以及溶解层13与载体基板10之间均形成有隔热层14，如图2所示。
在本公开的一个实施例中，溶解层和隔热层的厚度之和不大于5微米。这样在溶解层溶解之后，柔性衬底较为平坦。
在本公开的一个实施例中，隔热层由纳米孔绝热材料形成。纳米孔绝热材料是建立在低密度和超级细孔结构的基础上，理论上其导热系数趋近于零，利用纳米孔绝热材料形成的隔热层，比空气导热系数还小。例如，隔热层可以是由氧化硅纳米孔绝热材料形成。
在本公开的一个实施例中，如图2、图3所示，溶解层13形成在对应于显示区域a以及部分周边区域b的区域中。若溶解层形成在对应于显示区域的区域中，则在柔性衬底与载体基板分离时，先利用激光剥离未形成溶解层的柔性衬底，再利用溶液将溶解层分离，从而使得整个柔性显示面板与载体基板分开。由于激光照射显示区域会影响显示区域内TFT等显示器件的性 能，因此，在本公开的一个实施例中，使得溶解层形成在对应于显示区域以及部分周边区域的区域中，则激光仅照射周边区域而不照射显示区域，从而保证显示区域的显示器件的性能。
为了防止在显示器件制备过程中，溶解层被其他的溶液侵蚀，在本公开的一个实施例中，溶解层13的侧面被柔性衬底11覆盖，如图2、图3所示。
或者，在本公开的一个实施例中，柔性显示母板还包括保护层15，保护层15至少覆盖溶解层13的侧面，如图4所示。保护层覆盖溶解层的侧面以防止在形成显示器件时，溶解层被其他的溶液侵蚀。在本公开的一个实施例中，保护层仅覆盖溶解层的侧面，另外，考虑到制作工艺的不同，保护层还可以是进一步覆盖溶解层上表面的部分。
本公开的至少一个实施例提供了一种柔性显示面板的制作方法，如图5所示，包括：
步骤101、至少在载体基板对应形成柔性显示面板的显示区域的区域中形成溶解层，其中，溶解层可溶解于溶解剂。
例如，溶解层可以是环氧树脂，环氧树脂为热固性，可以在加热或者烘烤的情况下使其固化。
步骤102、在载体基板上形成柔性衬底，并在柔性衬底的显示区域形成显示器件，其中，柔性衬底至少覆盖溶解层的上表面。
在本公开的一个实施例中，溶解层形成在对应于显示区域以及周边区域的区域中，则柔性衬底覆盖溶解层的上表面。
在本公开的另一个实施例中，溶解层形成在对应于柔性显示面板的显示区域以及部分周边区域的区域，在载体基板上形成柔性衬底，柔性衬底可以覆盖溶解层的上表面以及侧面。
步骤103、利用溶解剂将溶解层溶解。
利用溶解剂将溶解层溶解，从而使得柔性显示面板与载体基板分离。溶解剂根据溶解层的材料而不同。
根据本公开的实施例的柔性显示面板的制作方法，若在载体基板和柔性衬底之间位于显示区域和/或周边区域的边界处形成溶解层，在柔性衬底与载体基板分离时，利用溶解剂将溶解层溶解，从而使得整个柔性显示面板与载体基板分开，无需机械剥离或激光照射，避免其对柔性衬底产生损伤。
在本公开的一个实施例中，溶解层形成在对应于显示区域以及部分周边区域的区域；在上述步骤102之后，且在上述步骤103之前，如图6所示，所述方法还包括：
步骤104、利用激光从载体基板未形成柔性衬底的一侧照射未形成溶解层的区域。
如图6所示，激光照射柔性显示母板未形成溶解层的区域，使得未形成溶解层的区域的柔性衬底与载体基板分离。柔性衬底与载体基板分离可以是如图7所示。
在根据本公开的实施例的柔性显示面板的制作方法中，由于柔性显示面板的柔性衬底在显示区域与载体基板之间形成有溶解层，溶解层形成在对应于显示区域以及部分周边区域的区域中，未形成溶解层的区域对应于周边区域，则采用激光照射未形成溶解层的区域使得柔性衬底与载体基板分离，从而使得溶解剂可以与溶解层接触，将溶解层溶解，从而使得柔性衬底从载体基板剥离。由于未形成溶解层的区域对应于周边区域，则激光仅照射周边区域而不照射显示区域，从而保证显示区域的显示器件的性能。
在本公开的一个实施例中，如图9所示，在上述步骤101之前，所述制作方法还包括：
步骤105、至少在载体基板对应形成柔性显示面板的显示区域的区域中形成隔热层。
则上述步骤101可以为：在隔热层上形成溶解层。
在这种情况下，形成的柔性显示母板还包括位于溶解层和载体基板之间的隔热层。
在本公开的一个实施例中，如图10所示，在上述步骤101之后，在上述步骤102之前，所述制作方法还包括：步骤106、在溶解层上形成隔热层。
形成的柔性显示母板如图3所示，包括位于溶解层和载体基板之间的隔热层以及位于溶解层和柔性衬底之间的隔热层。
在本公开的一个实施例中，溶解层形成在对应于显示区域以及部分周边区域的区域中；如图11所示，在上述步骤101之后，且在上述步骤102之前，所述制作方法还包括：
步骤107、在载体基板形成保护层，保护层覆盖溶解层的侧面。
形成的柔性显示母板如图4所示，溶解层13的侧面被保护层15覆盖。
此时，步骤104可以为：利用激光从载体基板未形成柔性衬底的一侧照射保护层，以使得保护层与载体基板分离。当保护层与载体基板分离之后，利用溶解剂可以将溶解层溶解，从而使得柔性显示面板与载体基板分离。
需要说明的是，根据本公开实施例的上述柔性显示母板的制作方法为了说明本公开的发明构思仅以与本公开的发明构思相关的层结构的制作进行说明，柔性显示面板包括多种薄膜或层结构，本公开对柔性显示面板的制作方法不详细说明。
下面，举例说明根据本公开实施例的柔性显示面板的制作方法，如图12所示，包括：
步骤201、清洗载体基板并烘干。
步骤202、在载体基板的对应于显示区域以及部分周边区域的区域中形成隔热层。
例如，采用溶胶-凝胶法或者氧化硅气凝胶法将有机硅化合物、硅溶胶等制备成纳米孔硅质绝热材料，作为隔热层的材料。例如，可以采用刮涂或喷涂的方式形成隔热层。例如，隔热层的厚度可以通过涂覆时控制流量参数和速度等来控制。
步骤203、在隔热层上形成环氧树脂溶解层。
在隔热层上形成环氧树脂溶解层后，在140℃进行热处理一小时使其固化。
步骤204、在环氧树脂溶解层上形成隔热层。该步骤可以参照上述步骤202执行。
在本公开的一个实施例中，溶解层和隔热层的厚度之后不大于5微米。
步骤205、在载体基板上形成柔性衬底。
在形成有上述溶解层以及隔热层的载体基板上涂覆酰亚胺形成柔性衬底。可以采用涂覆的方式通过调整挂图狭缝的大小调节柔性衬底的厚度。例如，柔性衬底的厚度为10-12μm。
步骤206、在柔性衬底上形成缓冲层。
可以用等离子体增强化学气相沉积设备在柔性衬底上沉积一层由氮化硅、氧化硅或其复合物形成的缓冲层。缓冲层厚度一般可以为1000-3000埃。 缓冲层主要用于降低膜层表面粗糙度和阻隔水氧对后续制备的TFT等显示器件的影响。
步骤207、在柔性基板的对应于显示区域的区域中形成显示器件。
所述显示器件包括薄膜晶体管等。
步骤208、利用激光从载体基板未形成柔性衬底的一侧照射未形成溶解层的区域，如图7所示。
步骤209、利用溶解剂溶解溶解层，如图8所示。
在激光照射后，溶解层柔性衬底与载体基板在未形成溶解层的区域分离，溶解剂可与溶解层接触并溶解溶解层，从而使得柔性显示面板与载体基板分离。
在根据本公开实施例的柔性显示面板的制作方法中，由于在柔性显示面板的柔性衬底在载体基板之间的对应于显示区域的区域中形成有溶解层，未形成溶解层的区域采用激光照射后，柔性衬底与载体基板分离，从而溶解剂可以与溶解层接触并溶解将溶解层溶解。避免激光照射显示区域损伤显示区域的TFT等发光器件的性能。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。
本申请要求于2015年5月26日递交的中国专利申请No.201510276605.8的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (13)

  1. 一种柔性显示母板，包括：载体基板以及形成在所述载体基板上的柔性显示面板单元，其中，所述柔性显示面板单元包括形成在所述载体基板上的柔性衬底以及位于所述柔性衬底上的显示区域和周边区域，在所述显示区域中形成显示器件，所述周边区域围绕所述显示区域；其中，所述柔性显示母板还包括位于所述载体基板和所述柔性衬底之间的溶解层，所述溶解层至少形成对应于所述显示区域的区域中，所述溶解层可溶解于溶解剂。
  2. 根据权利要求1所述的柔性显示母板，其中，所述柔性显示面板单元还包括位于所述溶解层和所述载体基板之间的隔热层和/或位于所述溶解层和所述柔性衬底之间的隔热层。
  3. 根据权利要求2所述的柔性显示母板，其中，所述隔热层由纳米孔绝热材料形成。
  4. 根据权利要求2或3所述的柔性显示母板，其中，所述溶解层和所述隔热层的厚度之和不大于5μm。
  5. 根据权利要求1至4中任何一项所述的柔性显示母板，其中，所述溶解层形成在对应于所述显示区域以及部分所述周边区域的区域中。
  6. 根据权利要求1至5中任何一项所述的柔性显示母板，其中，所述溶解层的侧面被所述柔性衬底覆盖；或者，
    所述柔性显示母板还包括保护层，所述保护层至少覆盖所述溶解层的侧面。
  7. 根据权利要求1至6中任何一项所述的柔性显示母板，其中，所述溶解层包括环氧树脂，所述溶解剂成分包括二氯甲烷、甲酸、苯酚和硫酸。
  8. 一种柔性显示面板的制作方法，所述柔性显示面板包括柔性衬底以及位于所述柔性衬底上的显示区域和周边区域，所述周边区域围绕所述显示区域，所述方法包括：
    至少在载体基板的对应于形成柔性显示面板的显示区域上形成溶解层，其中，所述溶解层可溶解于溶解剂；
    在所述载体基板上形成柔性衬底以及位于所述显示区域的显示器件，其中，所述柔性衬底至少覆盖所述溶解层的上表面；
    利用溶解剂溶解所述溶解层。
  9. 根据权利要求8所述的制作方法，其中，所述溶解层形成在所述显示区域以及部分所述周边区域；在所述载体基板上形成柔性衬底以及位于所述显示区域的显示器件之后，在利用溶解剂将所述溶解层溶解之前，所述方法还包括：
    利用激光从所述载体基板未形成柔性衬底的一侧照射所述柔性显示面板的未形成溶解层的区域。
  10. 根据权利要求8或9所述的制作方法，其中，在载体基板对应形成柔性显示面板的显示区域形成溶解层之前，所述方法还包括：
    在所述载体基板对应形成柔性显示面板的显示区域形成隔热层；
    所述在载体基板对应形成柔性显示面板的显示区域形成溶解层为：在所述隔热层上形成所述溶解层。
  11. 根据权利要求8至10中任何一项所述的制作方法，其中，在载体基板对应形成柔性显示面板的显示区域形成溶解层之后，在所述载体基板上形成柔性衬底以及位于所述显示区域的显示器件之前，所述方法还包括：在所述溶解层上形成隔热层。
  12. 根据权利要求8至11中任何一项所述的制作方法，其中，所述溶解层形成在所述显示区域以及部分所述周边区域；在所述载体基板上形成柔性衬底以及位于所述显示区域的显示器件之前，所述方法还包括：
    在所述载体基板形成保护层，所述保护层至少覆盖所述溶解层的侧面；
    所述利用激光从所述载体基板未形成柔性衬底的一侧照射所述柔性显示面板未形成溶解层的区域为：利用激光从所述载体基板未形成柔性衬底的一侧照射所述保护层。
  13. 根据权利要求8至12中任何一项所述的制作方法，其中，所述溶解层包括环氧树脂，所述溶解剂成分包括二氯甲烷、甲酸、苯酚和硫酸。
PCT/CN2016/075798 2015-05-26 2016-03-07 一种柔性显示母板及柔性显示面板的制作方法 WO2016188180A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/533,816 US10211238B2 (en) 2015-05-26 2016-03-07 Flexible display motherboard and manufacturing method of flexible display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510276605.8A CN104992944B (zh) 2015-05-26 2015-05-26 一种柔性显示母板及柔性显示面板的制作方法
CN201510276605.8 2015-05-26

Publications (1)

Publication Number Publication Date
WO2016188180A1 true WO2016188180A1 (zh) 2016-12-01

Family

ID=54304733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/075798 WO2016188180A1 (zh) 2015-05-26 2016-03-07 一种柔性显示母板及柔性显示面板的制作方法

Country Status (3)

Country Link
US (1) US10211238B2 (zh)
CN (1) CN104992944B (zh)
WO (1) WO2016188180A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10504766B2 (en) 2016-01-21 2019-12-10 Boe Technology Group Co., Ltd. Carrier substrate assembly, and fabrication method of flexible display substrate

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992944B (zh) 2015-05-26 2018-09-11 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法
CN105158831B (zh) * 2015-10-23 2018-11-30 深圳市华星光电技术有限公司 一种柔性板
CN106024830B (zh) * 2016-05-27 2019-12-06 京东方科技集团股份有限公司 柔性显示面板的制造方法、柔性显示面板和显示装置
US10353228B2 (en) * 2016-10-18 2019-07-16 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method for manufacturing flexible display substrate
CN106449520A (zh) * 2016-10-18 2017-02-22 深圳市华星光电技术有限公司 柔性显示基板制作方法
CN107068919A (zh) * 2017-05-31 2017-08-18 京东方科技集团股份有限公司 制造柔性面板的方法
CN108054297B (zh) * 2017-12-12 2019-10-11 武汉华星光电半导体显示技术有限公司 柔性显示面板的制作方法
CN109087998A (zh) * 2018-07-25 2018-12-25 武汉华星光电半导体显示技术有限公司 一种柔性显示面板及其制造方法
CN110875356A (zh) * 2018-08-30 2020-03-10 上海和辉光电有限公司 一种柔性显示母板、柔性amoled显示面板及柔性显示器件
CN110164821A (zh) * 2019-06-12 2019-08-23 京东方科技集团股份有限公司 柔性显示面板的制造方法
CN112331771A (zh) * 2019-08-05 2021-02-05 上海和辉光电有限公司 一种柔性器件与基板的分离方法
CN110728911B (zh) * 2019-10-21 2021-09-14 云谷（固安）科技有限公司 显示基板、显示面板及其制作方法
CN111276637B (zh) * 2020-03-19 2023-08-25 合肥鑫晟光电科技有限公司 柔性显示基板及其制作方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610700A (zh) * 2012-04-05 2012-07-25 复旦大学 一种卷对卷方式制作柔性薄膜太阳能电池的方法
CN102810512A (zh) * 2012-07-16 2012-12-05 京东方科技集团股份有限公司 一种柔性显示器件的制造方法
CN104992944A (zh) * 2015-05-26 2015-10-21 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269868A (en) * 1989-10-12 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method for separating bonded substrates, in particular disassembling a liquid crystal display device
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US20030021571A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Structure of and method for fabricating electro-optic devices utilizing a compliant substrate
JPWO2004005216A1 (ja) 2002-07-09 2005-11-04 宮原　健一郎 薄膜形成用基板、薄膜基板、光導波路、発光素子、及び発光素子搭載用基板
TWI223622B (en) * 2003-03-24 2004-11-11 Chien Hui Chuan Built-in high frequency induction-heating module for injection molding and thereof applications
CN101649068B (zh) * 2008-08-12 2011-12-14 贵州航天林泉电机有限公司 环氧树脂溶解剂及其制备方法
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
EP2660851B1 (de) * 2009-03-18 2020-10-14 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger
US20110141448A1 (en) 2009-11-27 2011-06-16 Nikon Corporation Substrate carrier device, substrate carrying method, substrate supporting member, substrate holding device, exposure apparatus, exposure method and device manufacturing method
KR20120105244A (ko) * 2011-03-15 2012-09-25 삼성디스플레이 주식회사 가요성 표시 장치의 제조 방법
US8657994B2 (en) * 2011-04-01 2014-02-25 Alta Devices, Inc. System and method for improved epitaxial lift off
TWI423739B (zh) * 2011-09-23 2014-01-11 Au Optronics Corp 可撓式基板結構之製造方法
JP5591859B2 (ja) * 2012-03-23 2014-09-17 株式会社東芝 基板の分離方法及び分離装置
CN102769109B (zh) * 2012-07-05 2015-05-13 青岛海信电器股份有限公司 柔性显示器的制作方法以及制作柔性显示器的基板
CN104685627B (zh) * 2012-08-22 2017-12-05 康宁股份有限公司 加工柔性玻璃基片
JP5610328B1 (ja) * 2013-03-14 2014-10-22 富士電機株式会社 半導体デバイスの製造方法
CN103325731B (zh) * 2013-05-20 2017-04-19 Tcl集团股份有限公司 柔性显示装置的制造方法
CN106410027B (zh) 2013-09-24 2019-11-05 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
JP6216727B2 (ja) * 2014-05-08 2017-10-18 東京応化工業株式会社 支持体分離方法
US9318475B2 (en) * 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610700A (zh) * 2012-04-05 2012-07-25 复旦大学 一种卷对卷方式制作柔性薄膜太阳能电池的方法
CN102810512A (zh) * 2012-07-16 2012-12-05 京东方科技集团股份有限公司 一种柔性显示器件的制造方法
CN104992944A (zh) * 2015-05-26 2015-10-21 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10504766B2 (en) 2016-01-21 2019-12-10 Boe Technology Group Co., Ltd. Carrier substrate assembly, and fabrication method of flexible display substrate

Also Published As

Publication number Publication date
US10211238B2 (en) 2019-02-19
US20170373100A1 (en) 2017-12-28
CN104992944B (zh) 2018-09-11
CN104992944A (zh) 2015-10-21

Similar Documents

Publication Publication Date Title
WO2016188180A1 (zh) 一种柔性显示母板及柔性显示面板的制作方法
CN103943544A (zh) 制造软性元件的方法
WO2016206236A1 (zh) 低温多晶硅背板及其制造方法和发光器件
JP2012528489A (ja) フレキシブル半導体デバイスを高温で提供する方法およびそのフレキシブル半導体デバイス
US11069638B2 (en) Method for fabricating the electronic component, and method for transposing a micro-element
WO2017128765A1 (zh) 像素结构及其制备方法、阵列基板和显示装置
KR20130138328A (ko) 반도체 장치용 이중 활성층들 및 이들을 제조하는 방법들
WO2015109738A1 (zh) 显示面板母板及其制备方法
WO2015051639A1 (zh) 显示基板及其制造方法和柔性显示装置
WO2018152889A1 (zh) 一种柔性基板的制备方法
WO2015100797A1 (zh) 柔性oled面板的制作方法
TWI718540B (zh) 觸控結構及其製作方法與觸控顯示裝置
TW202105539A (zh) 製造可撓式電子元件之方法及系統
WO2018176769A1 (zh) 叠层结构及其制备方法
US9691653B2 (en) Method of forming a flexible semiconductor layer and devices on a flexible carrier
WO2015043315A1 (zh) 阵列基板及其制造方法、显示装置
WO2015180403A1 (zh) 柔性显示面板及其制作方法、显示装置
CN105706222B (zh) 布线图案的制造方法和晶体管的制造方法
JP5960626B2 (ja) 薄膜トランジスタを備えた半導体装置の製造方法
JP6883279B2 (ja) 貫通電極基板の製造方法及び貫通電極基板
KR20110131674A (ko) 감광성 유리 기판을 이용한 디바이스 보호용 캡 및 그 제조 방법
JP2010040693A (ja) パターン形成方法
WO2018014441A1 (zh) 薄膜晶体管及其制作方法
JPWO2015016113A1 (ja) 電子デバイスの製造方法
TW201924107A (zh) 有機電致發光器件及光列印頭

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16799069

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 15533816

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16799069

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 16.04.2018)

122 Ep: pct application non-entry in european phase

Ref document number: 16799069

Country of ref document: EP

Kind code of ref document: A1