WO2015051639A1 - 显示基板及其制造方法和柔性显示装置 - Google Patents

显示基板及其制造方法和柔性显示装置 Download PDF

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Publication number
WO2015051639A1
WO2015051639A1 PCT/CN2014/078013 CN2014078013W WO2015051639A1 WO 2015051639 A1 WO2015051639 A1 WO 2015051639A1 CN 2014078013 W CN2014078013 W CN 2014078013W WO 2015051639 A1 WO2015051639 A1 WO 2015051639A1
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Prior art keywords
substrate
stress absorbing
absorbing layer
layer
base substrate
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PCT/CN2014/078013
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English (en)
French (fr)
Inventor
石领
李云飞
永山和由
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京东方科技集团股份有限公司
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Priority to US14/403,709 priority Critical patent/US9444061B2/en
Publication of WO2015051639A1 publication Critical patent/WO2015051639A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Display substrate manufacturing method thereof and flexible display device
  • the present invention relates to the field of display technologies, and in particular, to a display substrate, a method of manufacturing the same, and a flexible display device including the display substrate. Background technique
  • the flexible display device comprises a display substrate comprising a substrate substrate and a structure on the substrate substrate, the substrate substrate being a flexible substrate substrate, such as a polyimide (PI) substrate, poly(terephthalic acid) a diol ester (PET) substrate, a stainless steel substrate, etc.
  • the flexible substrate has a bendable property compared to a conventional glass substrate, and this is reliable for the device, particularly a fragile member. Make higher demands.
  • TFT thin film transistor
  • An object of the present invention is to solve the problem of poor reliability of a consumable member on a display substrate in the prior art, and to provide a display substrate which enhances the reliability of a fragile member.
  • a technical solution that solves the technical problem of the present invention is a display substrate, including: a substrate substrate and a wearing member disposed on the substrate, wherein the display substrate further includes a substrate disposed on the substrate And a stress absorbing layer between the fragile member; and the projection of the fragile member on the base substrate does not exceed a projected area of the stress absorbing layer on the base substrate.
  • the projection of the wearing member on the base substrate coincides with the projection of the stress absorbing layer on the base substrate.
  • the stress absorbing layer has a thickness of from 200 nm to 400 nm, and/or the material of the stress absorbing layer is silicon nitride or silicon oxide.
  • a buffer layer is further provided between the base substrate and the wearing member.
  • the stress absorbing layer is disposed between the buffer layer and the base substrate, and the wearing member is disposed on the buffer layer.
  • the buffer layer is disposed between the stress absorbing layer and the base substrate, and the wearing member is disposed on the stress absorbing layer.
  • the material of the buffer layer is silicon nitride or silicon oxide.
  • the consumable member comprises one or more of a thin film transistor, a gate line, and a data line.
  • the base substrate comprises one of a polyimide base substrate, a polyethylene terephthalate base substrate, and a stainless steel base substrate.
  • the present invention also provides a method of manufacturing a display substrate, comprising the steps of: preparing a substrate; providing a stress absorbing layer over the substrate; and providing a fragile member over the stress absorbing layer, wherein the wearing member The projection on the base substrate does not exceed the projected area of the stress absorbing layer on the base substrate.
  • a buffer layer is disposed on the substrate before the stress buffer layer is disposed over the substrate; optionally, a buffer layer is disposed on the stress absorption layer before the vulnerable member is disposed over the stress buffer layer .
  • the step of providing the stress absorbing layer over the base substrate comprises patterning the material layer with a mask corresponding to the shape of the fragile member to obtain a pattern of the stress absorbing layer.
  • Another object of the present invention is to solve the problem of poor reliability of a consumable member of a flexible display device in the prior art, and to provide a flexible display device comprising the above display substrate.
  • the display substrate included in the flexible display device is a flexible organic
  • the light emitting diode displays the substrate.
  • the display substrate and the flexible display device of the present invention are provided with a stress absorbing layer only under the wearing member, and no stress absorbing layer is provided at other positions, stress concentration occurs at the vulnerable member (ie, at the stress absorbing layer). Thereby, the wearing member (for example, TFT) is protected from damage, thereby improving the reliability of the display substrate and the flexible display device.
  • the wearing member for example, TFT
  • FIG. 1 is a schematic view showing the structure of a substrate substrate having a stress absorbing layer formed in Example 1 of the present invention.
  • Fig. 2 is a schematic view showing the structure after a buffer layer is formed on a substrate in the first embodiment of the present invention.
  • Fig. 3 is a view showing the structure of a substrate on which a TFT is formed in Embodiment 1 of the present invention.
  • Fig. 4 is a structural schematic view showing the preparation of a stress absorbing layer on a substrate according to an embodiment of the present invention.
  • Fig. 5 is a view showing the structure of a substrate having a buffer layer formed in Example 2 of the present invention.
  • Fig. 6 is a view showing the structure of a substrate on which a TFT is formed in Embodiment 2 of the present invention.
  • the present invention provides a display substrate comprising: a substrate substrate and a fragile member disposed on the substrate, further comprising a substrate disposed on the substrate and the wearing member a stress absorbing layer; the projection of the wearing member on the substrate substrate does not exceed a projection area of the stress absorbing layer on the substrate; the partial position of the substrate substrate is not disposed
  • the stress absorbing layer is described.
  • the substrate may be one of a polyimide (PI) substrate, a polyethylene terephthalate (PET) substrate, and a stainless steel substrate; the vulnerability
  • the component is one or more of a thin film transistor, a gate line, and a data line.
  • the projection of the fragile member on the base substrate coincides with the projection of the stress absorbing layer on the base substrate.
  • the stress absorbing layer has a thickness of from 200 nm to 400 nm, and/or the material of the stress absorbing layer is silicon nitride or silicon oxide.
  • a buffer layer is further provided between the base substrate and the wearing member.
  • the stress absorbing layer is disposed between the buffer layer and the base substrate, and the wearing member is disposed on the buffer layer.
  • the buffer layer is disposed between the stress absorbing layer and the base substrate, and the wearing member is disposed on the stress absorbing layer.
  • the material of the buffer layer is silicon nitride or silicon oxide.
  • the present invention also provides a flexible display device comprising the above display substrate.
  • the display substrate is a flexible organic light emitting diode display substrate.
  • Example 1
  • the present embodiment provides a display substrate comprising: a polyimide (PI) substrate 1 and a TFT disposed on the PI substrate (as an example of a fragile member)
  • PI polyimide
  • TFT disposed on the PI substrate
  • a stress absorbing layer 3 is disposed between the PI substrate 1 and the TFT; the stress absorbing layer 3 is obtained by patterning, for example, using a mask corresponding to the shape of the TFT.
  • the stress absorbing layer 3 is obtained by a patterning process.
  • the projection of the TFT on the PI substrate 1 does not exceed the projection area of the stress absorbing layer 3 on the PI substrate 1.
  • the projection of the TFT on the substrate substrate and the projection of the stress absorbing layer 3 on the substrate are heavy. That is, the stress absorbing layer 3 is disposed only below the TFT. Therefore, the stress generated when the display panel is bent can be dispersed by the gap between the stress absorbing layers 3, thereby avoiding stress concentration at the TFT (ie, at the stress absorbing layer 3), thereby protecting the TFT from damage, thereby improving the display substrate and The reliability of the flexible display device including the display substrate.
  • the thickness of the stress absorbing layer 3 is from 200 nm to 400 nm.
  • the inventors have found that the stress absorbing layer 3 within this thickness range is suitable, too thin, and does not absorb stress; too thick, it affects the fabrication of other functional layers and wastes materials.
  • the material of the stress absorbing layer 3 is silicon nitride or silicon oxide.
  • the inventors have found that the stress absorbing effect of the stress absorbing layer 3 made of silicon nitride or silicon oxide is more remarkable.
  • a buffer layer 2 is disposed above the stress absorbing layer 3, and the buffer layer 2 can also partially absorb the stress generated when the display substrate is bent; as shown in FIG.
  • the TFT is disposed on the buffer layer 2.
  • the buffer layer 2 is made of silicon nitride or silicon oxide, for example, by plasma enhanced chemical vapor deposition.
  • the vulnerable member in this embodiment may also be one or both of a gate line and a data line, as long as it is a device included in the flexible display device that is easily damaged when it is bent. .
  • the above display substrate is produced as follows:
  • Step 1 Prepare a stress absorbing layer.
  • the total gas flow rate was 4320 sccm
  • the pressure was 170 Pa
  • the deposition time was 2100 s
  • a material layer of the stress absorbing layer 3 having a thickness of 200 nm was obtained.
  • the material layer of the stress absorbing layer 3 of other thicknesses can be obtained by adjusting parameters such as deposition time, and the thickness is preferably between 200 nm and 400 nm.
  • the material layer of the deposited stress absorbing layer 3 is patterned by using a mask corresponding to the shape of the consumable member to obtain a pattern of the stress absorbing layer 3,
  • the vulnerable member is a TFT, and the vulnerable member may also be other devices that need protection, such as data lines, gate lines, and the like.
  • the specific graphical processing is prior art, and is not repeated here.
  • Step 2 Prepare a buffer layer.
  • the total gas flow rate was 4320 sccm, the pressure was 170 Pa, and the deposition time was 1800 s, and a buffer layer 2 having a thickness of 150 nm was obtained.
  • the buffer layer 2 is entirely covered with the polyimide PI substrate 1, and a structure as shown in Fig. 2 is obtained.
  • the buffer layer 2 described above functions to planarize the surface of the PI substrate 1; to better bond the device to be formed on the substrate 1; to block water and oxygen, and to ensure display substrate performance.
  • the fabrication of the above functional layers is prior art and will not be repeated here.
  • the projection of the TFT (as an example of a fragile member) on the PI substrate 1 coincide with the projection of the stress absorbing layer 3 on the PI substrate 1, depending on the mask. shape.
  • a person skilled in the art can obtain the shape of the stress absorbing layer 3 by controlling the shape of the mask.
  • the stress generated when the display substrate is bent can be dispersed by the gap between the stress absorbing layers 3, and the vulnerable member (for example, TFT) is protected from damage, thereby improving Display the reliability of the substrate.
  • the vulnerable member for example, TFT
  • the embodiment provides a display substrate comprising: a polyethylene terephthalate (PET) substrate 11 and a TFT disposed on the PET substrate 11 (
  • PET polyethylene terephthalate
  • a stress absorbing layer 3 is provided between the PET substrate 11 and the TFT; the stress absorbing layer 3 is obtained by a patterning process, for example, using a TFT (
  • the mask corresponding to the shape is patterned to obtain the stress absorbing layer 3.
  • the projection of the TFT on the PET substrate 11 does not exceed the projection area of the stress absorbing layer 3 on the PET substrate 11.
  • the projection of the TFT on the substrate substrate coincides with the projection of the stress absorbing layer 3 on the substrate.
  • the stress absorbing layer 3 is not disposed at a portion of the PI substrate substrate 11, i.e., the stress absorbing layer 3 is disposed only under the TFT. Therefore, the stress generated when the substrate is bent can be dispersed by the gap between the stress absorbing layers 3, thereby avoiding stress concentration at the TFT (ie, at the stress absorbing layer 3), thereby protecting the TFT from damage, thereby improving the display substrate and including The reliability of the flexible display device of the display substrate.
  • the thickness of the stress absorbing layer 3 is from 200 nm to 400 nm.
  • the inventors have found that the stress absorbing layer 3 in this thickness range is suitable, too thin, and cannot absorb stress; too thick, affects the production of other functional layers and wastes materials.
  • the material of the stress absorbing layer 3 is silicon nitride or silicon oxide.
  • the inventors have found that the stress absorbing effect of the stress absorbing layer 3 made of silicon nitride or silicon oxide is more remarkable.
  • a buffer layer 2 is disposed under the stress absorbing layer 3, and the buffer layer 2 can also partially absorb the stress generated when the display substrate is bent; as shown in FIG.
  • the TFT is disposed on the stress absorbing layer 3.
  • the buffer layer 2 is made of silicon nitride or silicon oxide, for example, by plasma enhanced chemical vapor deposition.
  • the vulnerable member in this embodiment may also be one or more of a gate line and a data line, as long as it is included in the flexible display device. Devices that are prone to damage are suitable.
  • the above display substrate is produced as follows:
  • Step 1 Prepare a buffer layer.
  • the buffer layer 2 is obtained by depositing silicon oxide on the PET substrate substrate 11 by plasma enhanced chemical vapor deposition.
  • the buffer layer 2 covers the entire PET substrate 11 to obtain a structure as shown in Fig. 4.
  • the buffer layer 2 described above functions to: flatten the surface of the PET substrate 11; better bond the PET substrate 11 to the device to be formed thereon; block water and oxygen, and ensure device performance.
  • Step 2 preparing a stress absorbing layer.
  • the material layer of the stress absorbing layer 3 of other thicknesses can be obtained by adjusting parameters such as deposition time, and the thickness is preferably between 200 nm and 400 nm.
  • the pattern of the stress absorbing layer 3 is obtained by patterning the material layer of the deposited stress absorbing layer 3 by using a mask corresponding to the shape of the TFT.
  • the vulnerable member is a TFT, and the vulnerable member can also be used.
  • data lines, gate lines, and so on For other devices that need protection, such as data lines, gate lines, and so on.
  • the specific graphical processing method is prior art, and is not repeated here.
  • the above functional layer is fabricated in the prior art, and is not described here again. Forming a TFT and other necessary devices to complete the fabrication of the flexible display substrate, and obtaining a display substrate as shown in FIG.
  • the stress absorbing layer 3 is retained under the TFT (as an example of a fragile member) (obtained by a patterning process), that is, a projection of a TFT (as an example of a fragile member) on the PET substrate 11 is located at the stress absorbing layer 3 In the projection area on the PET substrate substrate 11.
  • a projection of a TFT as an example of a fragile member
  • the projection of the TFT (as an example of the wearing member) on the PET substrate 11 coincide with the projection of the stress absorbing layer 3 on the PET substrate 11, which mainly depends on the mask. shape.
  • a person skilled in the art can obtain the shape of the stress absorbing layer 3 by controlling the shape of the mask.
  • the stress generated when the display panel is bent can be dispersed by the gap between the stress absorbing layers 3, and the vulnerable member (for example, TFT) is protected from damage, thereby improving Display the reliability of the substrate.
  • the vulnerable member for example, TFT
  • the embodiment provides a flexible display device including the above display substrate and other necessary components.
  • the display substrate included in the flexible display device is a flexible organic light emitting diode display substrate.

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Abstract

提供一种显示基板及其制造方法和柔性显示装置，属于显示技术领域，其可解决现有技术中显示基板上的易损构件可靠性差的问题。显示基板包括：衬底基板（1）和设置在该衬底基板（1）上的易损构件，还包括设于所述衬底基板（1）和所述易损构件之间的应力吸收层（3）；所述易损构件在衬底基板（1）上的投影不超出所述应力吸收层（3）在衬底基板（1）上的投影区域；所述衬底基板（1）的部分位置上没有设置所述应力吸收层（3）。显示基板、柔性显示装置具有应力吸收层，在弯曲时产生的应力可通过应力吸收层之间的空隙进行分散，保护易损构件不受损坏，从而提高显示基板和柔性显示装置的可靠性。

Description

显示基板及其制造方法和柔性显示装置 技术领域
本发明属于显示技术领域， 具体涉及一种显示基板及其制造 方法和含有该显示基板的柔性显示装置。 背景技术
柔性显示技术是近几年比较热门的前瞻技术， 柔性显示装置 具有轻薄、 可弯曲甚至卷曲、 机械性能好的特点， 越来越受到人 们的重视。 柔性显示装置包括显示基板， 显示基板包括衬底基板 和位于衬底基板上的结构， 衬底基板为柔性衬底基板， 如聚酰亚 胺（PI )衬底基板、 聚对苯二曱酸乙二醇酯（PET )衬底基板、 不 锈钢衬底基板等， 相比于普通玻璃衬底基板， 柔性衬底基板具有 可弯折的特性， 而这就对器件的可靠性， 尤其是易损构件提出更 高的要求。
弯折时会产生应力聚集， 随着弯折次数的增加， 柔性显示装 置的柔性衬底基板上的各种易损构件容易发生损坏。 例如， 作为 易损构件的薄膜晶体管（TFT )结构由于弯折时应力的聚集， 可能 导致膜层断裂， 势必会对 TFT性能产生影响， 从而影响柔性显示 装置的可靠性。 因此， 避免易损构件被应力破坏对柔性显示装置 的可靠性至关重要。 发明内容
本发明的目的是解决现有技术中显示基板上的易损构件可靠 性差的问题， 提供一种增强易损构件可靠性的显示基板。
解决本发明技术问题所釆用的技术方案是一种显示基板， 包 括： 衬底基板和设置在该衬底基板上的易损构件， 其中， 所述显 示基板还包括设于所述衬底基板和所述易损构件之间的应力吸收 层； 以及所述易损构件在衬底基板上的投影不超出所述应力吸收 层在衬底基板上的投影区域。 优选的是， 所述易损构件在所述衬底基板上的投影与所述应 力吸收层在所述衬底基板上的投影重合。
优选的是， 所述应力吸收层的厚度为 200nm-400nm， 和 /或所 述应力吸收层的材料为氮化硅或氧化硅。
优选的是， 在所述衬底基板和所述易损构件之间还设有緩冲 层。
例如，所述应力吸收层设于所述緩冲层与所述衬底基板之间， 所述易损构件设于所述緩冲层上。
例如，所述緩冲层设于所述应力吸收层与所述衬底基板之间， 所述易损构件设于所述应力吸收层上。
优选的是， 所述緩冲层的材料为氮化硅或氧化硅。
优选的是， 所述易损构件包括薄膜晶体管、 栅极线、 数据线 中的一种或几种。
优选的是， 所述衬底基板包括聚酰亚胺衬底基板、 聚对苯二 曱酸乙二醇酯衬底基板、 不锈钢衬底基板中的一种。
本发明还提供了一种制造显示基板的方法， 包括以下步骤： 制备衬底基板； 在衬底基板上方设置应力吸收层； 以及在应力吸 收层上方设置易损构件， 其中， 所述易损构件在所述衬底基板上 的投影不超出所述应力吸收层在所述衬底基板上的投影区域。
优选的是， 在衬底基板上方设置应力緩冲层之前在衬底基板 上设置緩冲层； 可选地， 在应力緩冲层上方设置易损构件之前， 在应力吸收层上设置緩冲层。
优选的是， 在所述衬底基板上方设置应力吸收层的步骤包括 釆用与易损构件形状相对应的掩膜板对所述材料层进行图形化处 理来获得应力吸收层的图形。
本发明的另一个目的是解决现有技术中柔性显示装置的易损 构件可靠性差的问题， 提供一种柔性显示装置， 其包括上述显示 基板。
优选的是， 所述柔性显示装置所包括的显示基板为柔性有机 发光二极管显示基板。
本发明的显示基板和柔性显示装置由于只在易损构件的下方 设有应力吸收层， 而在其他位置上没有设置应力吸收层， 因此在 易损构件处 （即应力吸收层处） 产生应力集中， 由此保护易损构 件 （例如 TFT ) 不受损坏， 从而提高显示基板和柔性显示装置的 可靠性。 附图说明
图 1为本发明实施例 1中衬底基板上制备有应力吸收层后的 结构示意图。
图 2为本发明实施例 1中衬底基板上制备有緩冲层后的结构 示意图。
图 3为本发明实施例 1中衬底基板上制备有 TFT后的结构示 意图。
图 4为本发明实施例 中衬底基板上制备有应力吸收层后的 结构示意图。
图 5为本发明实施例 2中衬底基板上制备有緩冲层后的结构 示意图。
图 6为本发明实施例 2中衬底基板上制备有 TFT后的结构示 意图。
其中： 1.PI衬底基板； 2.緩冲层； 3.应力吸收层； 4.栅极绝缘 层； 5.刻蚀阻挡层； 6.平坦化层； 7.氧化铟锡层； 8.栅极； 9.有源层； 10.源漏极； 11.PET衬底基板。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结 合附图和具体实施方式对本发明作进一步详细描述。
本发明提供一种显示基板， 包括： 衬底基板和设置在该衬底 基板上的易损构件， 还包括设于所述衬底基板和所述易损构件之 间的应力吸收层； 所述易损构件在所述衬底基板上的投影不超出 所述应力吸收层在所述衬底基板上的投影区域； 所述衬底基板的 部分位置上没有设置所述应力吸收层。
其中， 所述衬底基板可以为聚酰亚胺 （PI )衬底基板、 聚对 苯二曱酸乙二醇酯 （PET )衬底基板、 不锈钢衬底基板中的一种； 所述易损构件为薄膜晶体管、 栅极线、 数据线中的一种或几种。
优选的是， 所述易损构件在所述衬底基板上的投影与所述应 力吸收层在所述衬底基板上的投影重合。
优选的是， 所述应力吸收层的厚度为 200nm-400nm， 和 /或所 述应力吸收层的材料为氮化硅或氧化硅。
优选的是， 在所述衬底基板和所述易损构件之间还设有緩冲 层。
例如，所述应力吸收层设于所述緩冲层与所述衬底基板之间， 所述易损构件设于所述緩冲层上。
例如，所述緩冲层设于所述应力吸收层与所述衬底基板之间， 所述易损构件设于所述应力吸收层上。
优选的是， 所述緩冲层的材料为氮化硅或氧化硅。
本发明还提供一种柔性显示装置， 所述柔性显示装置包括上 述显示基板。
优选的是， 所述显示基板为柔性有机发光二极管显示基板。 实施例 1
如图 1-图 3所示， 本实施例提供一种显示基板， 包括： 聚酰 亚胺 （ PI )衬底基板 1和设置在该 PI衬底基板上的 TFT (作为易 损构件的示例 )， 在所述 PI衬底基板 1和所述 TFT之间设有应力 吸收层 3; 所述应力吸收层 3是经过图形化处理获得的， 例如， 釆 用与 TFT形状相对应的掩膜板进行图形化处理获得应力吸收层 3。
如图 3所示，所述 TFT在 PI衬底基板 1上的投影不超出所述 应力吸收层 3在 PI衬底基板 1上的投影区域。 优选的， 所述 TFT 在衬底基板上的投影与所述应力吸收层 3在衬底基板上的投影重 合， 即所述应力吸收层 3只设置在 TFT的下方。 因此， 显示面板 弯曲时产生的应力可通过应力吸收层 3之间的空隙进行分散， 避 免 TFT处（即应力吸收层 3处）产生应力集中， 由此保护 TFT不 受损坏， 从而提高显示基板和包括该显示基板的柔性显示装置的 可靠性。
优选的， 所述应力吸收层 3的厚度为 200nm-400nm。 发明人 发现， 在该厚度范围内的应力吸收层 3 比较合适， 太薄， 则无法 起到吸收应力的作用； 太厚， 则会影响其它功能层的制作并且浪 费材料。
优选的， 所述应力吸收层 3的材料为氮化硅或氧化硅。 发明 人发现， 由氮化硅或氧化硅制作的应力吸收层 3 的应力吸收效果 更为明显。
优选的， 如图 2所示， 在所述应力吸收层 3上方设置緩冲层 2 , 所述緩冲层 2也能部分吸收显示基板弯折时产生的应力； 如图 3所示， 所述 TFT设置于该緩冲层 2上。
优选的， 所述緩冲层 2釆用氮化硅或氧化硅制备， 例如， 可 以釆用等离子体增强化学气相沉积法制备。
可以理解的是， 本实施例中的易损构件也可以是栅极线、 数 据线中的一种或两种， 只要是柔性显示装置中所包括的在其弯折 时易于损坏的器件都适用。
上述的显示基板按以下步骤制作：
步骤 1， 制备应力吸收层。
在 PI衬底基板 1上沉积应力吸收层 3的材料层， 例如， 釆用 等离子体增强化学气相沉积法沉积氮化硅层， 沉积条件为： 温度 350 °C , NH3/SiH4=8： 1， 总气体流量为 4320sccm, 压力为 170Pa， 沉积时间为 2100s， 得到厚度为 200nm的应力吸收层 3的材料层。 可以通过调整沉积时间等参数， 获得其他厚度的应力吸收层 3 的 材料层， 厚度优选在 200nm-400nm之间。
釆用与易损构件形状相对应的掩膜板对沉积得到的应力吸收 层 3的材料层进行图形化处理来获得应力吸收层 3的图形， 本实 施例中易损构件为 TFT， 易损构件也可以为其它需要保护的器件， 例如数据线、 栅极线等。 具体的图形化处理为现有技术， 在此不 再——赘述。
步骤 2， 制备緩冲层。
在完成步骤 1的 PI衬底基板 1上， 釆用等离子体增强化学气 相沉积法沉积氮化硅来获得该緩冲层 2，沉积条件为：温度 350°C， NH3/SiH4=8： 1， 总气体流量为 4320sccm， 压力为 170Pa， 沉积时 间为 1800s， 得到厚度为 150nm的緩冲层 2。
该緩冲层 2将聚酰亚胺 PI衬底基板 1整体覆盖， 获得如图 2 所示的结构。
上述的緩冲层 2起到如下作用：将 PI衬底基板 1表面平坦化； 使衬底基板 1 其上要形成的器件更好结合； 阻隔水、 氧气， 保证 显示基板性能。
步骤 3， 制备其它必要功能层。
在完成步骤 2的 PI衬底基板 1上制作其它必要功能层， 如图 3所示的栅极绝缘层 4、刻蚀阻挡层 5、平坦化层 6、氧化铟锡层 7、 栅极 8、 有源层 9、 源漏极 10。 上述功能层的制作为现有技术， 在 此不再——赘述。 形成 TFT以及其它必要的器件， 从而完成柔性 显示基板制作， 得到如图 3所示的显示基板， 其中， 只在 TFT (作 为易损构件的示例）的下方保留应力吸收层 3 (图形化处理获得）， 即 TFT (作为易损构件的示例）在 PI衬底基板 1上的投影位于所 述应力吸收层 3在 PI衬底基板 1上的投影区域内。 当然， 也可以 使 TFT (作为易损构件的示例）在 PI衬底基板 1上的投影与所述 应力吸收层 3在 PI衬底基板 1上的投影相重合， 这主要取决于掩 膜板的形状。 本领域的技术人员可以通过控制掩膜板的形状， 获 得应力吸收层 3的形状。
本实施例制备的具有应力吸收层 3的显示基板中， 显示基板 弯曲时产生的应力可通过应力吸收层 3之间的空隙进行分散， 保 护易损构件（例如， TFT )不受损坏，从而提高显示基板的可靠性。 实施例 2
如图 4-图 6所示， 本实施例提供一种显示基板， 包括： 聚对 苯二曱酸乙二醇酯（PET )衬底基板 11和设置在该 PET衬底基板 11上的 TFT (作为易损构件的示例 ) ， 在所述 PET衬底基板 11 和所述 TFT之间设有应力吸收层 3; 所述应力吸收层 3是经过图 形化处理获得的， 例如， 釆用与 TFT (作为易损构件的示例） 形 状相对应的掩膜板进行图形化处理获得应力吸收层 3。
如图 6所示， 所述 TFT在 PET衬底基板 11上的投影不超出 所述应力吸收层 3在 PET衬底基板 11上的投影区域。优选的， 所 述 TFT在衬底基板上的投影与所述应力吸收层 3在衬底基板上的 投影重合。 所述 PI衬底基板 11 的部分位置没有设置所述应力吸 收层 3， 即所述应力吸收层 3只设置在 TFT下方。 因此显示基板 弯曲时产生的应力可通过应力吸收层 3之间的空隙进行分散， 避 免 TFT处（即应力吸收层 3处）产生应力集中， 由此保护 TFT不 受损坏， 从而提高显示基板和包括该显示基板的柔性显示装置的 可靠性。
优选的， 所述应力吸收层 3的厚度为 200nm-400nm。 发明人 发现， 在该厚度范围的应力吸收层 3 比较合适， 太薄， 则无法起 到吸收应力的作用； 太厚， 则影响其它功能层的制作并且浪费材 料。
优选的， 所述应力吸收层 3的材料为氮化硅或氧化硅。 发明 人发现， 由氮化硅或氧化硅制作的应力吸收层 3 的应力吸收效果 更为明显。
优选的， 如图 5所示， 在所述应力吸收层 3下方设置有緩冲 层 2， 所述緩冲层 2也能部分吸收显示基板弯折时产生的应力； 如 图 6所示， 所述 TFT设置于该应力吸收层 3上。
优选的， 所述緩冲层 2釆用氮化硅或氧化硅制备， 例如， 可 以釆用等离子体增强化学气相沉积法制备。
可以理解的是， 本实施例中的易损构件也可以是栅极线、 数 据线中的一种或几种， 只要是柔性显示装置中所包括的在其弯折 时易于损坏的器件都适用。
上述的显示基板按以下步骤制作：
步骤 1， 制备緩冲层。
在 PET衬底基板 11上釆用等离子体增强化学气相沉积法沉 积氧化硅获得緩冲层 2。 沉积条件为： 温度 350°C， NH3/SiH4=8： 1， 总气体流量为 4320sccm， 压力为 170Pa， 沉积时间为 2000s得 到厚度为 200nm的緩冲层 2。
该緩冲层 2将 PET衬底基板 11整体覆盖， 获得如图 4所示 的结构。
上述的緩冲层 2起到如下作用： 将 PET衬底基板 11表面平 坦化； 使 PET衬底基板 11与其上要形成的器件更好的结合； 阻隔 水、 氧气， 保证器件性能。
步骤 2， 制备应力吸收层。
在完成步骤 1的 PET衬底基板 11上沉积应力吸收层 3的材 料层， 例如， 釆用等离子体增强化学气相沉积法沉积氧化硅层， 沉积条件为：温度 350 °C， NH3/SiH4=8： 1，总气体流量为 4320sccm, 压力为 170Pa， 沉积时间为 4200s得到厚度为 400nm的应力吸收 层 3 的材料层。 可以通过调整沉积时间等参数， 获得其他厚度的 应力吸收层 3的材料层， 厚度优选在 200nm-400nm之间。
釆用与 TFT形状相对应的掩膜板对沉积得到的应力吸收层 3 的材料层进行图形化处理来获得应力吸收层 3 的图形， 本实施例 中易损构件为 TFT， 易损构件也可以为其它需要保护的器件， 例 如数据线、 栅极线等。 具体的图形化处理方法为现有技术， 在此 不再——赘述。
步骤 3， 制备其它必要功能层。
在完成步骤 2的 PET衬底基板 11上制作其它必要功能层， 如图 6所示的栅极绝缘层 4、 刻蚀阻挡层 5、 平坦化层 6、 氧化铟 锡层 7、 栅极 8、 有源层 9、 源漏极 10。 上述功能层的制作为现有 技术， 在此不再——赘述。 形成 TFT以及其它必要的器件， 从而 完成柔性显示基板制作， 得到如图 6所示的显示基板， 其中， 只 在 TFT (作为易损构件的示例）的下方保留应力吸收层 3 (图形化 处理获得） ， 即 TFT (作为易损构件的示例）在 PET衬底基板 11 上的投影位于所述应力吸收层 3在 PET衬底基板 11上的投影区域 内。 当然， 也可以使 TFT (作为易损构件的示例）在 PET衬底基 板 11上的投影与所述应力吸收层 3在 PET衬底基板 11上的投影 相重合， 这主要取决于掩膜板的形状。 本领域的技术人员可以通 过控制掩膜板的形状， 获得应力吸收层 3的形状。
本实施例制备的具有应力吸收层 3的显示基板中， 显示面板 弯曲时产生的应力可通过应力吸收层 3之间的空隙进行分散， 保 护易损构件（例如， TFT )不受损坏，从而提高显示基板的可靠性。 实施例 3
本实施例提供一种柔性显示装置， 该柔性显示装置包括上述 显示基板和其它必要组件。 优选地， 所述柔性显示装置所包括的 显示基板为柔性有机发光二极管显示基板。
而釆用的示例性实施方式， 然而本发明并不局限于此。 对于本领 域内的普通技术人员而言， 在不脱离本发明的精神和实质的情况 下， 可以做出各种变型和改进， 这些变型和改进也视为本发明的 保护范围。

Claims

权 利 要 求 书
1.一种显示基板， 包括： 衬底基板和设置在该衬底基板上的 易损构件， 其中，
还包括设于所述衬底基板和所述易损构件之间的应力吸收 层； 以及
所述易损构件在所述衬底基板上的投影不超出所述应力吸收 层在所述衬底基板上的投影区域。
2.如权利要求 1 所述的显示基板， 其中， 所述易损构件在所 述衬底基板上的投影与所述应力吸收层在所述衬底基板上的投影 重合。
3.如权利要求 1或 2所述的显示基板， 其中， 所述应力吸收 层的厚度为 200nm-400nm， 和 /或所述应力吸收层的材料为氮化硅 或氧化硅。
4.如权利要求 1至 3 中任意一项所述的显示基板， 其中， 在 所述衬底基板和所述易损构件之间还设有緩冲层。
5.如权利要求 4 所述的显示基板， 其中， 所述应力吸收层设 于所述緩冲层与所述衬底基板之间， 所述易损构件设于所述緩冲 层上。
6.如权利要求 4 所述的显示基板， 其中， 所述緩冲层设于所 述应力吸收层与所述衬底基板之间， 所述易损构件设于所述应力 吸收层上。
7.如权利要求 4至 6 中任意一项所述的显示基板， 其中， 所 述緩冲层的材料为氮化硅或氧化硅。
8.如权利要求 1-7中任意一项所述的显示基板， 其中， 所述易 损构件包括薄膜晶体管、 栅极线、 数据线中的一种或几种。
9.根据权利要求 1-8中任意一项所述的显示基板， 其中， 所述 衬底基板包括聚酰亚胺衬底基板、 聚对苯二曱酸乙二醇酯衬底基 板、 不锈钢衬底基板中的一种。
10.—种制造显示基板的方法， 包括以下步骤：
制备衬底基板；
在衬底基板上方设置应力吸收层； 以及
在应力吸收层上方设置易损构件，
其中， 所述易损构件在所述衬底基板上的投影不超出所述应 力吸收层在所述衬底基板上的投影区域。
11.根据权利要求 10 所述的方法， 其中， 所述应力吸收层的 厚度为 200nm-400nm， 和 /或所述应力吸收层的材料为氮化硅或氧 化硅。
12.根据权利要求 10或 11所述的方法， 其中， 在衬底基板上 方设置应力緩冲层的步骤之前还包括在衬底基板上设置緩冲层的 步骤。
13.根据权利要求 10或 11所述的方法， 其中， 在应力緩冲层 上方设置易损构件的步骤之前还包括在应力吸收层上设置緩冲层 的步骤。
14. 根据权利要求 10至 13 中任意一项所述的方法， 其中， 在所述衬底基板上方设置应力吸收层的步骤包括釆用等离子体增 强化学气相沉积法沉积应力吸收层的材料层、 和釆用与易损构件 形状相对应的掩膜板对所述材料层进行图形化处理来获得应力吸 收层的图形。
15.—种柔性显示装置， 包括： 如权利要求 1-9中任意一项所 述的显示基板。
16.如权利要求 15 所述的柔性显示装置， 其中， 所述显示基 板为柔性有机发光二极管显示基板。
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