WO2015043176A1 - 柔性显示基板及其制备方法、柔性显示装置 - Google Patents
柔性显示基板及其制备方法、柔性显示装置 Download PDFInfo
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- WO2015043176A1 WO2015043176A1 PCT/CN2014/076246 CN2014076246W WO2015043176A1 WO 2015043176 A1 WO2015043176 A1 WO 2015043176A1 CN 2014076246 W CN2014076246 W CN 2014076246W WO 2015043176 A1 WO2015043176 A1 WO 2015043176A1
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- Prior art keywords
- layer
- transparent material
- material layer
- flexible
- flexible display
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- 239000000758 substrate Substances 0.000 title claims abstract description 132
- 238000002360 preparation method Methods 0.000 title description 8
- 239000012780 transparent material Substances 0.000 claims abstract description 102
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000005224 laser annealing Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 293
- 230000008569 process Effects 0.000 description 13
- 239000011521 glass Substances 0.000 description 10
- 239000004408 titanium dioxide Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
Definitions
- the invention belongs to the field of flexible display technologies, and in particular relates to a flexible display substrate, a preparation method thereof and a flexible display device. Background technique
- the substrate of the display substrate of the flexible display device (such as the array substrate of the flexible organic light emitting diode display device) must be a flexible substrate, and the flexible substrate is mainly composed of organic materials such as polyimide and polyethylene terephthalate. production.
- the flexible material layer 2 is usually formed on the glass substrate 1, and then the buffer layer 4 and the display structure 9 (including the thin film transistor and the data line) are sequentially formed on the flexible material layer 2.
- a gate line a capacitor, an anode, a cathode, an organic light-emitting layer, a pixel defining layer, etc., which are not labeled in the drawings
- the adhesion between the two is lowered and separated from the glass substrate 1 (i.e., laser peeling) to form a separate flexible display substrate (when the flexible material layer 2 becomes the flexible substrate 21).
- the flexible array substrate includes a plurality of display units arranged in an array, each of which typically includes a thin film transistor, and a low temperature polysilicon (LTPS) thin film transistor is an important type of thin film transistor, and the active region 911 is made of polysilicon.
- the active region 911 is prepared by first forming an amorphous silicon layer, and then irradiating the amorphous silicon layer from the side away from the glass substrate 1 by an ultraviolet laser (excimer laser) through excimer laser annealing (ELA). The amorphous silicon is melted, nucleated, grown, and converted into polysilicon, and then the polysilicon layer is patterned to form the active region 911.
- a portion of the laser may be irradiated onto the display structure through the layer of flexible material, thereby affecting the performance of the display structure; for example, if the laser is irradiated to a thin film transistor (especially a metal oxide thin film transistor) On the active layer, it will cause problems such as wide voltage drift.
- a thin film transistor especially a metal oxide thin film transistor
- a laser may be irradiated through the amorphous silicon layer onto the flexible material layer during laser annealing, thereby causing damage to the performance of the flexible material layer, for example, causing carbonization of the flexible material layer or Separate from adjacent layers (such as buffer layers).
- the technical problem to be solved by the present invention includes a problem that the display structure in the existing flexible display substrate is easily damaged during laser stripping, and a flexible display substrate capable of avoiding damage of the display structure during laser stripping and preparation thereof method.
- the technical solution adopted to solve the technical problem of the present invention is a flexible display substrate, comprising:
- the "display structure” refers to all structures formed for display above the ultraviolet light reflecting layer, and the display structure may include: a thin film transistor, a gate line, a gate insulating layer, a data line, according to a type of the flexible display substrate, A planarization layer (PLN), a passivation layer (PVX), a capacitor, an anode, a cathode, an organic light-emitting layer, a pixel defining layer (PDL), a color filter film, a pixel electrode, a common electrode, a common electrode line, and the like.
- the number of layers of the first transparent material layer and the second transparent material layer may be equal and at least 2 layers.
- the first transparent material layer may be a silicon nitride layer having a thickness of 36 nm; and the second transparent material layer may be a silicon oxide layer having a thickness of 52 nm.
- the flexible display substrate may further include: an additional silicon dioxide layer having a thickness of 52 nm adjacent to the outermost silicon nitride layer in the stacked structure; adjacent to the outermost silicon dioxide layer in the stacked structure An additional silicon nitride layer having a thickness of 23.76 nm.
- the first transparent material layer may be 2 to 6 layers.
- the first transparent material layer may be 4 layers.
- the first transparent material layer may be a titanium dioxide layer having a thickness of 30 nm; and the second transparent material layer may be a silicon oxide layer having a thickness of 52 nm.
- the first transparent material layer may be 2 to 5 layers.
- the first transparent material layer may be three layers.
- the flexible substrate can be made of an organic flexible material.
- the display structure may be a plurality of display units arranged in an array; and the display unit may include a low temperature polysilicon thin film transistor.
- the flexible display substrate may further include an additional ultraviolet light reflecting layer, wherein the display structure may be a plurality of display units arranged in an array, the display unit may include a thin film transistor, and the additional ultraviolet light reflecting layer may be located a side of the thin film transistor remote from the ultraviolet light reflecting layer.
- the "additional ultraviolet light reflecting layer” also means a layer which reflects ultraviolet light and allows visible light to pass through, and also includes the above laminated structure and satisfies the above formula.
- the technical solution adopted to solve the technical problem of the present invention is a method for preparing the above flexible display substrate, which comprises:
- Forming the ultraviolet light reflecting layer on the flexible material layer comprising: alternately forming a first transparent material layer and a second transparent material layer to obtain a laminated structure;
- the number of layers of the first transparent material layer and the second transparent material layer may be equal and at least 2 layers.
- the first transparent material layer and the second transparent material layer both satisfy: Where d is the thickness of each transparent material layer, n is the refractive index of the transparent material layer, and ⁇ is the ultraviolet light wavelength.
- the first transparent material layer may be a silicon nitride layer having a thickness of 36 nm; and the second transparent material layer may be a silicon oxide layer having a thickness of 52 nm, and the method may further include: an outermost side in the stacked structure An additional silicon dioxide layer having a thickness of 52 nm adjacent thereto is formed on the silicon nitride layer; and an additional nitrogen having a thickness of 23.76 nm adjacent thereto is formed on the outermost silicon dioxide layer in the stacked structure. Silicon layer.
- the display structure may include a plurality of display units arranged in an array, the display unit may include a thin film transistor, and the method may further include: forming an additional on a side of the thin film transistor remote from the ultraviolet light reflective layer Ultraviolet light reflecting layer.
- the display structure may include a plurality of display units arranged in an array, the display unit may include a low temperature polysilicon thin film transistor; the forming the display structure may include: forming an amorphous silicon layer; and amorphous by laser annealing The silicon layer is transformed into a polysilicon layer.
- Embodiments of the present invention also provide a flexible display device including the above flexible display substrate.
- an ultraviolet light reflecting layer is disposed between the flexible substrate (flexible material layer) and the display structure. Therefore, when the laser is peeled off, the ultraviolet light reflecting layer can pass through. The laser of the flexible material layer is reflected back to avoid the display structure such as the thin film transistor, thereby avoiding damage to the display structure.
- the ultraviolet light reflecting layer allows visible light to pass through, so that it does not affect the normal display and manufacturing process. For example, in the manufacturing process of a flexible display substrate, it is often necessary to use the alignment mark for alignment. At this time, since the ultraviolet light reflection layer allows visible light to pass through, it does not affect the alignment.
- the ultraviolet light reflecting layer can also reflect the laser light passing through the amorphous silicon layer, thereby preventing the flexible material layer from being damaged.
- the invention is applicable to flexible display substrates, especially for flexible array substrates with low temperature polysilicon thin film transistors.
- FIG. 1 is a schematic cross-sectional structural view of a conventional flexible display substrate
- FIG. 2 is a schematic cross-sectional structural view of a conventional flexible display substrate during laser stripping in a preparation process
- FIG. 3 is a cross-sectional structural view of a flexible display substrate according to Embodiment 1 of the present invention.
- FIG. 4 is a graph showing a visible light transmittance of an ultraviolet light reflecting layer according to Embodiment 1 of the present invention.
- Figure 5 is a cross-sectional view showing another flexible display substrate of Embodiment 1 of the present invention.
- FIG. 6 is a schematic cross-sectional view showing a flexible display substrate according to Embodiment 1 of the present invention when laser annealing is performed in a preparation process;
- FIG. 7 is a cross-sectional structural view showing a flexible display substrate according to Embodiment 1 of the present invention when laser stripping is performed in a preparation process;
- the reference numerals are: 1. a glass substrate; 2. a flexible material layer; 21, a flexible substrate; 3. an ultraviolet light reflecting layer; 31, a laminated structure; 311, a first transparent material layer; 312, a second transparent material layer; 321 , an additional silicon nitride layer; 322, an additional silicon dioxide layer; 4, a buffer layer; 9, a display structure; 91, an amorphous silicon layer; 911, an active region.
- Example 1 As shown in FIG. 3 to FIG. 7 , the embodiment provides a flexible display substrate, which includes:
- An ultraviolet light reflecting layer 3 disposed on the flexible substrate 21, the ultraviolet light reflecting layer 3 capable of reflecting ultraviolet light but allowing visible light to pass through;
- a display structure 9 is disposed above the ultraviolet light reflecting layer 3.
- the display structure 9 means all the structures formed above the ultraviolet light reflecting layer 3 for display.
- the display structure 9 may include: a thin film transistor, a gate line, a gate insulating layer, a data line, a planarization layer (PLN), a passivation layer (PVX), a capacitor, an anode, a cathode, an organic light emitting layer, depending on the type of the flexible display substrate. , a pixel defining layer (PDL), a color filter film, a pixel electrode, a common electrode, a common electrode line, and the like.
- PDL pixel defining layer
- the ultraviolet light reflecting layer 3 is disposed between the flexible substrate 21 and the display structure 9. Therefore, as shown in FIG. 7, the ultraviolet light reflecting layer 3 can pass through the flexible material during laser peeling.
- the laser light of layer 2 is reflected back away from being irradiated to the display structure 9 including a thin film transistor or the like, thereby preventing the performance of the display structure 9 from being affected.
- the ultraviolet light reflecting layer 3 allows visible light to transmit light, so that it does not affect the normal display and manufacturing process. For example, in the manufacturing process of the flexible display substrate, it is often necessary to use the alignment mark for alignment. Since the ultraviolet light reflecting layer allows visible light to pass through, it does not affect the alignment.
- an array substrate of a flexible OLED display device is used as an example of a flexible display substrate, that is, a flexible display substrate includes a driving circuit (a switching thin film transistor, a driving thin film transistor, a capacitor, etc.), a gate line, a data line, and a cathode. , an anode, an organic light-emitting layer, a pixel defining layer, and the like.
- a driving circuit a switching thin film transistor, a driving thin film transistor, a capacitor, etc.
- a gate line a data line
- a cathode a cathode
- an anode an organic light-emitting layer
- a pixel defining layer and the like.
- the flexible array substrate includes a plurality of display units arranged in an array, each of which generally includes a thin film transistor, and an active region 911 of the thin film transistor (especially a metal oxide thin film transistor) is the most
- the display structure 9 which is easily affected during the laser lift-off process has the most obvious effect on the protection of the array substrate by the ultraviolet light-reflecting layer 3.
- the flexible display substrate may also Other types are flexible color film substrates, flexible closed substrates, array substrates of flexible liquid crystal display devices, and the like.
- a low temperature polysilicon thin film transistor can be used, i.e., the active region 911 of the thin film transistor is composed of a low temperature polysilicon material.
- the active region 911 is formed by first forming an amorphous silicon layer 91 and then converting the amorphous silicon layer 91 into a polysilicon layer by a crystallization process.
- the commonly used method is a laser annealing process. During the laser annealing crystallization process, a part of the laser may pass through the amorphous silicon layer 91, thereby causing damage to the flexible substrate 21.
- the ultraviolet light reflecting layer 3 may also reflect the laser light back to avoid flexibility. The substrate 21 is damaged in laser annealing.
- the thin film transistor in the flexible display substrate of the present invention is not limited to the low temperature polysilicon thin film transistor, and may also be an amorphous silicon thin film transistor, an oxide thin film transistor, etc.; the crystallization process is not limited to the laser annealing process, and It may be metal induced crystallization, solid phase crystallization, or the like.
- the flexible substrate 21 is made of an organic flexible material; typically made of polyimide or polyethylene terephthalate.
- the flexible substrate 21 made of an organic flexible material is mature and more commonly used; on the other hand, the organic flexible material is also more susceptible to laser damage, and the effect is more apparent by applying the embodiment of the present invention.
- the ultraviolet light reflecting layer 3 includes a laminated structure 31 composed of a first transparent material layer 311 and a second transparent material layer 312 which are alternately disposed, wherein the two transparent material layers are equal in number and each has at least 2 layers.
- the main body of the ultraviolet light reflecting layer 3 is a multilayer structure (laminated structure 31) which is alternately composed of two different transparent material layers, that is, "first transparent material layer 311 - second transparent material layer 312 - first a transparent material layer 311 - a second transparent material layer 312" cyclic structure; wherein the two material layers are equal in number, that is, the first transparent material layer 311 and the second transparent material layer 312 are necessarily "paired"; There are at least 2 layers of each material layer, so that the laminated structure 31 has a total of at least 4 layers.
- first transparent material layer 311 and the second transparent layer mentioned above The alternating arrangement of the material layers 312 only indicates the arrangement relationship between the two layers, but does not indicate that it has a specific positional relationship with the flexible substrate 21, that is, the first transparent material layer 311 may be closest to the flexible substrate 21, or may be A second layer of transparent material 312. At the same time, it is also possible to provide other separate layers made of the first transparent material or the second transparent material in addition to the laminated structure 31, but at this time the layer does not belong to the laminated structure 31.
- first transparent material layer 311 and the second transparent material layer 312 also satisfy the formula: where d is the thickness of any transparent material layer, n is the refractive index of the transparent material layer, and ⁇ is the wavelength of the ultraviolet light to be reflected.
- the first transparent material layer 311 and the second transparent material layer 312 are both transparent, when the thickness and the refractive index of both transparent material layers satisfy the above relationship, the laminated structure 31 composed of them can be reflected.
- the laminated structure 31 has the highest reflectance for light having a wavelength of ⁇ , but it also has a higher reflectance for light having a wavelength close to ⁇ , so that the laminated structure 31 is not only for one "dot" The light of the wavelength has a reflection effect.
- the first transparent material layer 311 is a silicon nitride layer having a thickness of 36 nm
- the second transparent material layer 312 is a silicon oxide layer having a thickness of 52 nm.
- UV lasers with a wavelength of 308 nm are used in laser lift-off and excimer laser annealing.
- the refractive index of silicon nitride prepared by plasma chemical vapor deposition (PECVD) at 308 nm is 2.14
- the refractive index of the silicon dioxide layer at a wavelength of 308 nm is 1.48
- the above thickness is exactly in accordance with the above formula.
- the flexible display substrate it is generally required to first provide the buffer layer 4 on the flexible substrate 21, and then form the display structure 9 on the buffer layer 4.
- the buffer layer 4 functions to reduce the surface roughness and improve the display structure. 9 in combination with a flexible substrate 21, and a laser annealing crystallization process in a flexible array substrate including a low temperature polysilicon thin film transistor
- the protective layer 4 is generally protected by a silicon nitride or silicon dioxide or a mixed material of silicon nitride and silicon dioxide, so that the ultraviolet light reflecting layer 3 described above can simultaneously
- the ultraviolet light reflecting layer 3 further includes: a thickness of 52 nm adjacent to the outermost silicon nitride layer (ie, the first transparent material layer 311) in the stacked structure 31.
- the thickness of the silicon nitride layer in 31 is 0.66 times, which is 23.76 nm.
- the additional silicon dioxide layer 322 and the additional silicon nitride layer 321 are added because it is found through simulation that increasing the above layer can increase the ultraviolet light (ultraviolet light with a wavelength of 308 nm) without significantly reducing the visible light transmittance. Reflectivity.
- the number of layers of the first transparent material layer 311 may be 2 to 6 layers, for example, 4 layers.
- the total number of layers of the laminated structure 31 may be 4 to 12 layers, for example, 8 layers.
- the ultraviolet light reflecting layer 3 includes the above laminated structure 31 (the total number of layers is 8 When the layer) and the additional silicon dioxide layer 322 and the additional silicon nitride layer 321 have a visible light transmittance curve as shown in FIG. 4, it can be seen from the figure that the ultraviolet light reflecting layer 3 has a high reflectance for the wavelength portion of the ultraviolet light. High (reflectivity of 92% for ultraviolet light with a wavelength of 308 nm), and transmittance of more than 90% for the visible wavelength portion.
- the first transparent material layer 311 may also be a titanium dioxide layer having a thickness of 30 nm; and the second transparent material layer 312 is a silicon oxide layer having a thickness of 52 nm.
- the titanium dioxide layer and the silicon dioxide layer in the above thickness range may also be employed as the first transparent material layer 311 and the second transparent material layer 312, respectively. Since the refractive index of titanium dioxide is larger than the refractive index of silicon nitride, the thickness of the titanium dioxide layer is smaller than the thickness of the silicon nitride layer.
- the number of layers of the first transparent material layer 311 may be 2 to 5 layers, for example, 3 layers.
- the total number of layers may be 4 to 10 layers; for example, 6 layers, at which time the reflectance to ultraviolet light at a wavelength of 308 nm is 89%, and The transmittance in the visible light range is 90% or more.
- first transparent material layer 311 and the second transparent material layer 312 are as described above, and the first material can be used to reflect the ultraviolet light and allow visible light to pass through.
- a layer of transparent material 311 and a second layer of transparent material 312 are also possible.
- the display structure therein includes a plurality of display units arranged in an array, each of which typically includes a thin film transistor (for example, a metal oxide thin film transistor), at this time
- a thin film transistor for example, a metal oxide thin film transistor
- An outer side of the thin film transistor may also be provided with an additional ultraviolet light reflecting layer.
- the "additional ultraviolet light reflecting layer” also means a layer which can reflect ultraviolet light and allow visible light to pass through, and also includes the above laminated structure and satisfies the above formula.
- an ultraviolet light reflecting layer may be disposed outside the thin film transistor in order to prevent ultraviolet light in the external light from affecting the active region of the thin film transistor.
- the additional ultraviolet light reflecting layer can be disposed as a passivation layer between the thin film transistor and the organic light emitting diode. It can also be disposed on the outer layer of the organic light emitting diode as a package structure, or as an additional structure on the outer side of the thin film transistor, as long as it can prevent external ultraviolet light from being irradiated onto the thin film transistor.
- the substrate may be a conventional hard substrate such as a glass substrate 1.
- the flexible material layer 2 may be a layer of an organic flexible material 2 such as polyimide or polyethylene terephthalate.
- the flexible material layer 2 can be produced by a conventional method such as coating, and in the subsequent laser stripping step, the flexible material layer 2 is separated from the glass substrate 1 to become a flexible substrate 21 of the flexible display substrate.
- the step further includes forming two additional layers before and after forming the stacked structure 31, respectively.
- the method of forming the first transparent material layer 311 and the second transparent material layer 312 may be determined according to a specific material thereof.
- a stacked structure composed of silicon dioxide and silicon nitride can be produced by a plasma enhanced chemical vapor deposition method as long as the introduced reaction gas is changed during deposition; for example, a silicon nitride layer is formed.
- the reaction gas used in the case may be a mixed gas of SiH 4 , NH 3 , and N 2
- the reaction gas used in forming the silicon oxide layer may be a mixed gas of SiH 4 , N0 2 , and N 2 ;
- the titanium dioxide layer can usually be prepared by electron beam evaporation.
- the thickness of each layer in the laminated structure 31 can be calculated from the deposition rate and the deposition time, or can be determined by detecting the film thickness. 504.
- An amorphous silicon layer 91 can be formed.
- the amorphous silicon layer 91 can be formed by chemical vapor deposition, for example, at a thickness of 40 to 60 nm.
- the amorphous silicon layer 91 can be converted into a polysilicon layer by laser annealing (excimer laser annealing) as shown in FIG.
- the laser used in the laser annealing may be an ultraviolet laser having a wavelength of, for example, 308 nm.
- the active region 911 of the thin film transistor prepared according to the method of the present embodiment is close to the flexible substrate 21, that is, it belongs to a "top gate thin film transistor", but it is obvious that a bottom gate thin film transistor is also suitable for the present invention, with the difference that it is prepared. It is necessary to form a structure such as a gate/gate line, a gate insulating layer, and the like, and then an amorphous silicon layer 91 is prepared.
- a thin-film transistor such as a metal oxide thin film transistor is used in the flexible array substrate manufactured by the method of the embodiment, it is also feasible, as long as a metal oxide layer is formed without laser annealing. .
- the step may include: forming an active region 911 by using a polysilicon layer by a patterning process, and continuing to form a gate insulating layer, a gate/gate line, a source/drain, a passivation layer, a data line, a planarization layer, and an anode. , a pixel defining layer, an organic light emitting layer, a cathode, a color filter film, and the like.
- the array substrate of the device includes a structure of a pixel electrode, a common electrode line, etc., but these are not described in detail herein.
- the flexible material layer 2 is subjected to laser lift-off to obtain a flexible display substrate.
- the flexible material layer 2 is exposed, and the flexible material layer 2 and the display structure thereon are detached from the glass substrate 1 to form a separate flexible display substrate. At this time, the flexible material layer 2 is the flexible substrate 21 of the flexible display substrate.
- the embodiment of the invention further provides a flexible display device comprising the flexible display substrate of embodiment 1.
- the flexible display device may be a flexible liquid crystal display device, a flexible organic light emitting diode display device, or the like.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims
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CN103500745B (zh) * | 2013-09-25 | 2014-12-17 | 京东方科技集团股份有限公司 | 柔性显示基板及其制备方法、柔性显示装置 |
CN103779390B (zh) | 2014-02-11 | 2016-08-17 | 京东方科技集团股份有限公司 | 一种柔性显示基板及其制备方法 |
CN104022123B (zh) | 2014-05-16 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种柔性显示基板及其制备方法、柔性显示装置 |
KR102205856B1 (ko) * | 2014-06-11 | 2021-01-21 | 삼성디스플레이 주식회사 | 센서를 포함하는 유기 발광 표시 장치 |
CN104143565B (zh) * | 2014-07-28 | 2017-11-10 | 京东方科技集团股份有限公司 | 一种柔性显示基板及其制备方法与显示装置 |
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CN105137636A (zh) * | 2015-09-10 | 2015-12-09 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法和显示面板 |
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WO2019021462A1 (ja) * | 2017-07-28 | 2019-01-31 | シャープ株式会社 | 表示デバイス |
CN107910457B (zh) * | 2017-11-09 | 2020-03-31 | 武汉华星光电半导体显示技术有限公司 | 一种柔性显示面板的缺陷修复方法 |
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JP6666530B2 (ja) * | 2018-03-20 | 2020-03-13 | 堺ディスプレイプロダクト株式会社 | フレキシブルoledデバイス及びその製造方法並びに支持基板 |
CN108831930A (zh) * | 2018-06-22 | 2018-11-16 | 福州大学 | 一种基于激光技术的柔性薄膜晶体管及其制备方法 |
CN109244111A (zh) * | 2018-08-31 | 2019-01-18 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制作方法 |
WO2020071195A1 (ja) * | 2018-10-02 | 2020-04-09 | パイオニア株式会社 | 発光装置の製造方法及び発光装置 |
JP6851519B2 (ja) * | 2020-02-20 | 2021-03-31 | 堺ディスプレイプロダクト株式会社 | フレキシブルoledデバイス及びその製造方法並びに支持基板 |
TWI743722B (zh) * | 2020-03-30 | 2021-10-21 | 元太科技工業股份有限公司 | 顯示裝置 |
CN113540118A (zh) * | 2020-03-30 | 2021-10-22 | 元太科技工业股份有限公司 | 显示装置 |
CN111463231B (zh) * | 2020-04-13 | 2023-10-17 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
CN112201673A (zh) * | 2020-09-15 | 2021-01-08 | 北京大学深圳研究生院 | 一种钙钛矿光电探测器及其制备方法 |
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