WO2016181592A1 - ヘイズの評価方法 - Google Patents

ヘイズの評価方法 Download PDF

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Publication number
WO2016181592A1
WO2016181592A1 PCT/JP2016/001315 JP2016001315W WO2016181592A1 WO 2016181592 A1 WO2016181592 A1 WO 2016181592A1 JP 2016001315 W JP2016001315 W JP 2016001315W WO 2016181592 A1 WO2016181592 A1 WO 2016181592A1
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WO
WIPO (PCT)
Prior art keywords
haze
scattered light
standard sample
value
standard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/001315
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English (en)
French (fr)
Japanese (ja)
Inventor
久之 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
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Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to DE112016001802.9T priority Critical patent/DE112016001802B4/de
Priority to CN201680027570.7A priority patent/CN107615468B/zh
Priority to US15/570,278 priority patent/US10234281B2/en
Priority to KR1020177032618A priority patent/KR102262072B1/ko
Publication of WO2016181592A1 publication Critical patent/WO2016181592A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/10—Investigating individual particles
    • G01N15/14—Optical investigation techniques, e.g. flow cytometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/10—Investigating individual particles
    • G01N15/14—Optical investigation techniques, e.g. flow cytometry
    • G01N2015/1486—Counting the particles

Definitions

  • the present invention relates to a method for evaluating haze.
  • the particle counter apparatus is an apparatus for examining the number and position of particles by generating strong scattered light when incident light hits a wafer and there are particles there. Even when haze (unevenness on the surface) is present on the surface of the silicon wafer, weak scattered light is generated by applying light to the wafer, so that the haze can also be measured using the particle counter device.
  • Haze is an important quality item, and this is managed as a haze value by a particle counter device.
  • a high haze value means that the surface roughness is large, and a low haze value means that the surface roughness is small.
  • the particle counter normally performs particle size calibration on a standard wafer (standard sample) coated with standard particles (made of polystyrene or SiO 2 ) in order to increase measurement accuracy.
  • the laser intensity and the sensitivity of the photomultiplier (photomultiplier) differ slightly from device to device, so the light intensity scattered from particles of a certain size should be the same for the incident light. It is difficult to make the detector sensitivity etc. completely the same.
  • a standard particle of a certain size is placed on the wafer, and the scattered light intensity generated from this wafer (depending on the device) is fixed as a value unique to the device. The difference between devices is filled by treating it as the scattered light intensity for the size particle.
  • the calibration should be performed on a standard wafer (standard sample) with respect to the haze value, but what is required for a standard wafer for haze is as follows. 1) There is no in-plane distribution of roughness, and it is constant from any direction (atomic steps, etc. have a step from one direction but no step from another) Not possible). 2) There should be no dirt during the measurement (if it gets dirty, the haze value will change). 3) It must not be dirty or cloudy during storage (the haze value changes when clouded).
  • Patent Document 1 discloses that a standard wafer for haze is formed by forming cylindrical irregularities on the surface of a silicon wafer from the viewpoint of constant roughness when viewed from any direction.
  • the present invention has been made in view of the above problems, and it is possible to calibrate the haze value of a particle counter device using a standard sample for haze and to evaluate the haze that can improve the measurement accuracy of haze. It aims to provide a method.
  • the present invention is a method for evaluating haze on a substrate surface by a particle counter device using scattered light, wherein the haze of the substrate surface is determined from the scattered light intensity of light incident on the substrate surface.
  • a haze value calibration is performed using a standard sample, and a haze evaluation method characterized by using a sample coated with standard particles as the standard sample is provided.
  • the haze value Is preferably obtained.
  • the haze value is calibrated using the standard sample, and the standard sample is used as the standard sample.
  • the measurement accuracy of haze can be improved.
  • the inventor has intensively studied a haze evaluation method capable of calibrating the haze value of the particle counter device using a standard sample for haze and improving the measurement accuracy of haze.
  • the essence of the haze measurement is how much scattered light the incident light captures. If constant scattered light is generated, the cause of generation need not be the roughness of the substrate surface.
  • the present inventor has found that a standard sample coated with standard particles that returns a certain amount of scattered light to incident light can be applied not only to particle calibration but also to haze calibration. .
  • a standard sample coated with standard particles is prepared (see S11 in FIG. 1). Specifically, a standard sample coated with standard particles made of polystyrene (PSL) or SiO 2 having a predetermined size (particle diameter) is prepared.
  • PSL polystyrene
  • SiO 2 having a predetermined size (particle diameter)
  • the haze value is calibrated using the standard sample (see S12 in FIG. 1). Specifically, the standard sample prepared in S11 is measured with a particle counter device, and the median value (median value) of the actual scattered light intensity is obtained. At this time, the measured value needs to be an actually measured value of the scattered light intensity, not a value calibrated with the particle size. Compare the measured median value of the actual scattered light intensity with the median value of the initial value of the actual scattered light intensity when the standard sample is formed (hereinafter referred to as “standard value”). Based on this, the haze value is calibrated.
  • a substrate for haze evaluation is prepared (see S13 in FIG. 1). Specifically, a wafer in a manufacturing process in which haze management is performed is prepared.
  • the haze value of the substrate surface is obtained from the scattering intensity of the light incident on the substrate surface using a particle counter device (see S14 in FIG. 1). Specifically, the haze value of the substrate surface is obtained from the scattering intensity of the light incident on the wafer surface prepared in S13, using the particle counter device that has been calibrated for the haze value in S12.
  • FIG. 3 shows an example of haze measurement.
  • FIG. 3A shows a haze map, which shows the in-plane distribution of the haze in the wafer. In FIG.
  • a light-colored region is a region having a large haze value (surface irregularities are large), and a dark-colored region is a portion having a small haze value (small surface irregularities).
  • FIG. 3B shows the haze value distribution, the horizontal axis is the haze value, and the vertical axis is the count number. In FIG. 3B, the location indicated by the arrow corresponds to the median value of the scattered light intensity.
  • FIG. 2A shows an application example of standard particles.
  • FIG. 2A eight kinds of standard particles having different sizes are applied on a silicon wafer.
  • FIG. 2B shows the measurement results of the wafer counter shown in FIG.
  • the horizontal axis is the scattered light intensity (scattered light intensity generated from one standard particle) and can be converted to the particle size
  • the vertical axis is the count number (number of times scattered light is generated). Yes, the number of particles. It can be seen from the measurement results in FIG. 2 (b) that there are eight peaks for each particle size. If the wafer shown in FIG. 2A is used as a standard sample, calibration can be performed simultaneously for eight types of scattered light intensities, and calibration can be performed efficiently and with high accuracy.
  • the standard sample is used to calibrate the haze value, and a sample coated with standard particles is used as the standard sample.
  • the measurement accuracy of haze can be improved.
  • the time-dependent change of the scattered light intensity of the light incident on the surface of the standard sample is monitored, and the haze value is obtained by changing the conversion rate of the haze value based on the change rate of the scattered light intensity of the standard sample. It is preferable. Thus, if a haze value is calculated
  • a plurality of the particle counter devices it is preferable to calibrate the haze value between.
  • the calibration of the haze value between the plurality of particle counter devices is performed, the measurement accuracy of the haze when using the plurality of particle counter devices can be improved.
  • Example 1 The median value of the scattered light intensity detected from the wafer coated with PSL (polystyrene latex) standard particles (particle size: 0.12 ⁇ m) and the change over time of the converted PLS standard particle size were measured. The measurements were performed using the same particle counter device. The results are shown in FIGS. 4 (a) and 4 (b). Here, FIG. 4 (a) shows the change with time of the median value of the scattered light intensity, and FIG. 4 (b) shows the change with time of the PLS standard particle size after conversion.
  • PSL polystyrene latex
  • Example 2 The change with time of the haze value detected from the specific position of the wafer used in Experimental Example 1 was measured.
  • the haze was measured by simulating the scattered light from the standard particles as the scattered light from the haze. The measurement was performed using the same particle counter device as in Experimental Example 1. The results are shown in FIG.
  • the median value of the scattered light intensity generated from one size of PSL standard particles decreases with time.
  • the haze value also decreases at the same time.
  • the PLS standard particle size after conversion as shown in FIG. 4 (b), even if the scattered light intensity decreases, the PSL standard particle size after conversion when the change exceeds a certain value. Since the conversion value is changed so as not to change, the time-dependent change in the PLS standard particle size after conversion is relatively small.
  • the median value of the scattered light intensity changes due to a change with time of the particle counter device.
  • changes over time of the apparatus include a decrease in laser light output and a decrease in detector sensitivity.
  • the same size particles can be output as the same size even if the status of the device changes.
  • the results of Experimental Examples 1 and 2 by monitoring the temporal change of the median value of the scattered light intensity generated from the standard particles of known size, it is possible to indirectly monitor the temporal change of the haze value. I was able to confirm that it was possible.
  • the change between the particle counter devices of the haze value can be obtained indirectly.
  • Example 1 In a particle counter using scattered light, the median value of the scattered light intensity is monitored by monitoring the median value of the scattered light intensity generated from the wafer (standard sample) coated with 0.12 ⁇ m PSL standard particles. Became 0.90 times. At this time, by multiplying the conversion rate of the haze value by 1.11, it was possible to obtain a haze value that offsets the change over time of the particle counter device.
  • Example 2 Generated from a wafer (standard sample) coated with PSL standard particles having a particle size of 0.12 ⁇ m in each of two particle counter devices using scattered light (hereinafter referred to as “device A” and “device B”).
  • the median value of scattered light intensity was determined.
  • the median value of scattered light intensity in apparatus B was 1.20 times the median value of scattered light intensity in apparatus A.
  • the correction value of the noise value measured by the device B was 0.83 times, it was possible to obtain a haze value that offsets the variation between the particle counter devices.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
PCT/JP2016/001315 2015-05-13 2016-03-10 ヘイズの評価方法 Ceased WO2016181592A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112016001802.9T DE112016001802B4 (de) 2015-05-13 2016-03-10 Verfahren zum Bewerten einer Trübung
CN201680027570.7A CN107615468B (zh) 2015-05-13 2016-03-10 雾度的评价方法
US15/570,278 US10234281B2 (en) 2015-05-13 2016-03-10 Method for evaluating haze
KR1020177032618A KR102262072B1 (ko) 2015-05-13 2016-03-10 헤이즈의 평가 방법

Applications Claiming Priority (2)

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JP2015098286A JP6299668B2 (ja) 2015-05-13 2015-05-13 ヘイズの評価方法
JP2015-098286 2015-05-13

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US (1) US10234281B2 (enExample)
JP (1) JP6299668B2 (enExample)
KR (1) KR102262072B1 (enExample)
CN (1) CN107615468B (enExample)
DE (1) DE112016001802B4 (enExample)
WO (1) WO2016181592A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10989656B2 (en) 2017-05-05 2021-04-27 3M Innovative Properties Company Scatterometry system and method of using the same

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JP7054634B2 (ja) * 2018-02-21 2022-04-14 セーレン株式会社 測定装置
CN109916945A (zh) * 2019-04-10 2019-06-21 浙江众泰汽车制造有限公司 一种雾度评价装置及雾度评价方法
US12241845B2 (en) * 2021-06-24 2025-03-04 Beijing Tongmei Xtal Technology Co., Ltd. Method and setup for detecting surface haze of materials
JP7700751B2 (ja) * 2021-09-10 2025-07-01 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法

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JP2007114183A (ja) * 2005-07-22 2007-05-10 Commiss Energ Atom 絶縁薄膜上にナノ構造体を含むヘイズノイズ標準の製造方法
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Publication number Priority date Publication date Assignee Title
US10989656B2 (en) 2017-05-05 2021-04-27 3M Innovative Properties Company Scatterometry system and method of using the same

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Publication number Publication date
DE112016001802B4 (de) 2024-07-18
US20180128606A1 (en) 2018-05-10
JP2016213411A (ja) 2016-12-15
CN107615468A (zh) 2018-01-19
US10234281B2 (en) 2019-03-19
JP6299668B2 (ja) 2018-03-28
KR20180006912A (ko) 2018-01-19
DE112016001802T5 (de) 2018-01-25
KR102262072B1 (ko) 2021-06-09
CN107615468B (zh) 2020-06-19

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