WO2016181592A1 - ヘイズの評価方法 - Google Patents
ヘイズの評価方法 Download PDFInfo
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- WO2016181592A1 WO2016181592A1 PCT/JP2016/001315 JP2016001315W WO2016181592A1 WO 2016181592 A1 WO2016181592 A1 WO 2016181592A1 JP 2016001315 W JP2016001315 W JP 2016001315W WO 2016181592 A1 WO2016181592 A1 WO 2016181592A1
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- haze
- scattered light
- standard sample
- value
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- 238000011156 evaluation Methods 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000012937 correction Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 230000036962 time dependent Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract description 23
- 230000007423 decrease Effects 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/14—Optical investigation techniques, e.g. flow cytometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/14—Optical investigation techniques, e.g. flow cytometry
- G01N2015/1486—Counting the particles
Definitions
- the present invention relates to a method for evaluating haze.
- the particle counter apparatus is an apparatus for examining the number and position of particles by generating strong scattered light when incident light hits a wafer and there are particles there. Even when haze (unevenness on the surface) is present on the surface of the silicon wafer, weak scattered light is generated by applying light to the wafer, so that the haze can also be measured using the particle counter device.
- Haze is an important quality item, and this is managed as a haze value by a particle counter device.
- a high haze value means that the surface roughness is large, and a low haze value means that the surface roughness is small.
- the particle counter normally performs particle size calibration on a standard wafer (standard sample) coated with standard particles (made of polystyrene or SiO 2 ) in order to increase measurement accuracy.
- the laser intensity and the sensitivity of the photomultiplier (photomultiplier) differ slightly from device to device, so the light intensity scattered from particles of a certain size should be the same for the incident light. It is difficult to make the detector sensitivity etc. completely the same.
- a standard particle of a certain size is placed on the wafer, and the scattered light intensity generated from this wafer (depending on the device) is fixed as a value unique to the device. The difference between devices is filled by treating it as the scattered light intensity for the size particle.
- the calibration should be performed on a standard wafer (standard sample) with respect to the haze value, but what is required for a standard wafer for haze is as follows. 1) There is no in-plane distribution of roughness, and it is constant from any direction (atomic steps, etc. have a step from one direction but no step from another) Not possible). 2) There should be no dirt during the measurement (if it gets dirty, the haze value will change). 3) It must not be dirty or cloudy during storage (the haze value changes when clouded).
- Patent Document 1 discloses that a standard wafer for haze is formed by forming cylindrical irregularities on the surface of a silicon wafer from the viewpoint of constant roughness when viewed from any direction.
- the present invention has been made in view of the above problems, and it is possible to calibrate the haze value of a particle counter device using a standard sample for haze and to evaluate the haze that can improve the measurement accuracy of haze. It aims to provide a method.
- the present invention is a method for evaluating haze on a substrate surface by a particle counter device using scattered light, wherein the haze of the substrate surface is determined from the scattered light intensity of light incident on the substrate surface.
- a haze value calibration is performed using a standard sample, and a haze evaluation method characterized by using a sample coated with standard particles as the standard sample is provided.
- the haze value Is preferably obtained.
- the haze value is calibrated using the standard sample, and the standard sample is used as the standard sample.
- the measurement accuracy of haze can be improved.
- the inventor has intensively studied a haze evaluation method capable of calibrating the haze value of the particle counter device using a standard sample for haze and improving the measurement accuracy of haze.
- the essence of the haze measurement is how much scattered light the incident light captures. If constant scattered light is generated, the cause of generation need not be the roughness of the substrate surface.
- the present inventor has found that a standard sample coated with standard particles that returns a certain amount of scattered light to incident light can be applied not only to particle calibration but also to haze calibration. .
- a standard sample coated with standard particles is prepared (see S11 in FIG. 1). Specifically, a standard sample coated with standard particles made of polystyrene (PSL) or SiO 2 having a predetermined size (particle diameter) is prepared.
- PSL polystyrene
- SiO 2 having a predetermined size (particle diameter)
- the haze value is calibrated using the standard sample (see S12 in FIG. 1). Specifically, the standard sample prepared in S11 is measured with a particle counter device, and the median value (median value) of the actual scattered light intensity is obtained. At this time, the measured value needs to be an actually measured value of the scattered light intensity, not a value calibrated with the particle size. Compare the measured median value of the actual scattered light intensity with the median value of the initial value of the actual scattered light intensity when the standard sample is formed (hereinafter referred to as “standard value”). Based on this, the haze value is calibrated.
- a substrate for haze evaluation is prepared (see S13 in FIG. 1). Specifically, a wafer in a manufacturing process in which haze management is performed is prepared.
- the haze value of the substrate surface is obtained from the scattering intensity of the light incident on the substrate surface using a particle counter device (see S14 in FIG. 1). Specifically, the haze value of the substrate surface is obtained from the scattering intensity of the light incident on the wafer surface prepared in S13, using the particle counter device that has been calibrated for the haze value in S12.
- FIG. 3 shows an example of haze measurement.
- FIG. 3A shows a haze map, which shows the in-plane distribution of the haze in the wafer. In FIG.
- a light-colored region is a region having a large haze value (surface irregularities are large), and a dark-colored region is a portion having a small haze value (small surface irregularities).
- FIG. 3B shows the haze value distribution, the horizontal axis is the haze value, and the vertical axis is the count number. In FIG. 3B, the location indicated by the arrow corresponds to the median value of the scattered light intensity.
- FIG. 2A shows an application example of standard particles.
- FIG. 2A eight kinds of standard particles having different sizes are applied on a silicon wafer.
- FIG. 2B shows the measurement results of the wafer counter shown in FIG.
- the horizontal axis is the scattered light intensity (scattered light intensity generated from one standard particle) and can be converted to the particle size
- the vertical axis is the count number (number of times scattered light is generated). Yes, the number of particles. It can be seen from the measurement results in FIG. 2 (b) that there are eight peaks for each particle size. If the wafer shown in FIG. 2A is used as a standard sample, calibration can be performed simultaneously for eight types of scattered light intensities, and calibration can be performed efficiently and with high accuracy.
- the standard sample is used to calibrate the haze value, and a sample coated with standard particles is used as the standard sample.
- the measurement accuracy of haze can be improved.
- the time-dependent change of the scattered light intensity of the light incident on the surface of the standard sample is monitored, and the haze value is obtained by changing the conversion rate of the haze value based on the change rate of the scattered light intensity of the standard sample. It is preferable. Thus, if a haze value is calculated
- a plurality of the particle counter devices it is preferable to calibrate the haze value between.
- the calibration of the haze value between the plurality of particle counter devices is performed, the measurement accuracy of the haze when using the plurality of particle counter devices can be improved.
- Example 1 The median value of the scattered light intensity detected from the wafer coated with PSL (polystyrene latex) standard particles (particle size: 0.12 ⁇ m) and the change over time of the converted PLS standard particle size were measured. The measurements were performed using the same particle counter device. The results are shown in FIGS. 4 (a) and 4 (b). Here, FIG. 4 (a) shows the change with time of the median value of the scattered light intensity, and FIG. 4 (b) shows the change with time of the PLS standard particle size after conversion.
- PSL polystyrene latex
- Example 2 The change with time of the haze value detected from the specific position of the wafer used in Experimental Example 1 was measured.
- the haze was measured by simulating the scattered light from the standard particles as the scattered light from the haze. The measurement was performed using the same particle counter device as in Experimental Example 1. The results are shown in FIG.
- the median value of the scattered light intensity generated from one size of PSL standard particles decreases with time.
- the haze value also decreases at the same time.
- the PLS standard particle size after conversion as shown in FIG. 4 (b), even if the scattered light intensity decreases, the PSL standard particle size after conversion when the change exceeds a certain value. Since the conversion value is changed so as not to change, the time-dependent change in the PLS standard particle size after conversion is relatively small.
- the median value of the scattered light intensity changes due to a change with time of the particle counter device.
- changes over time of the apparatus include a decrease in laser light output and a decrease in detector sensitivity.
- the same size particles can be output as the same size even if the status of the device changes.
- the results of Experimental Examples 1 and 2 by monitoring the temporal change of the median value of the scattered light intensity generated from the standard particles of known size, it is possible to indirectly monitor the temporal change of the haze value. I was able to confirm that it was possible.
- the change between the particle counter devices of the haze value can be obtained indirectly.
- Example 1 In a particle counter using scattered light, the median value of the scattered light intensity is monitored by monitoring the median value of the scattered light intensity generated from the wafer (standard sample) coated with 0.12 ⁇ m PSL standard particles. Became 0.90 times. At this time, by multiplying the conversion rate of the haze value by 1.11, it was possible to obtain a haze value that offsets the change over time of the particle counter device.
- Example 2 Generated from a wafer (standard sample) coated with PSL standard particles having a particle size of 0.12 ⁇ m in each of two particle counter devices using scattered light (hereinafter referred to as “device A” and “device B”).
- the median value of scattered light intensity was determined.
- the median value of scattered light intensity in apparatus B was 1.20 times the median value of scattered light intensity in apparatus A.
- the correction value of the noise value measured by the device B was 0.83 times, it was possible to obtain a haze value that offsets the variation between the particle counter devices.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
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Abstract
Description
ヘイズ(表面の凹凸)がシリコンウエハ表面に存在する場合にも、ウエハに光を当てることにより弱い散乱光が発生するので、上記のパーティクルカウンター装置を用いて、ヘイズの測定も行うことができる。
装置ごとに、レーザー強度や、フォトマル(光電子増倍管)の感度が若干異なるため、本来ならば入射光に対して、ある一定のサイズのパーティクルから散乱する光強度は同じであるはずだが、検出器感度などを完全に一緒にするのは難しく、実際にはある一定サイズの標準粒子をウエハに乗せ、このウエハから発生する散乱光強度(装置によって異なる)をその装置固有の値として、一定サイズのパーティクルに対する散乱光強度として扱うことで装置間差を埋めている。
1)粗さの面内分布がなく一定であり、かつ、どの方位から見ても一定であること(原子ステップなどは、ある方向からは段差があるが、別の方向からでは段差がないので不可)。
2)測定途中で汚れないこと(汚れるとヘイズ値が変わる)。
3)保管中に汚れたり、曇らないこと(曇るとヘイズ値が変わる)。
従って、長期間にわたるヘイズ用の標準サンプルを形成することは難しく、特許文献1に開示されたヘイズ用の標準サンプルであっても経時変化という点では問題があった。
このようにしてヘイズ値を求めれば、効果的にヘイズの測定精度を向上させることができる。
このようにして複数のパーティクルカウンター装置間のヘイズ値のキャリブレーションを行えば、複数のパーティクルカウンター装置を用いた際のヘイズの測定精度を向上させることができる。
さらに、上記の知見に基づいて、基板表面に入射した光の散乱光強度から基板表面のヘイズ値を求める際に、標準サンプルを用いてヘイズ値のキャリブレーションを行い、標準サンプルとして標準粒子を塗布したサンプルを用いることでヘイズの測定精度を向上させることができることを見出し、本発明をなすに至った。
具体的には、所定のサイズ(粒径)のポリスチレン(PSL)やSiO2等で作られている標準粒子を塗布した標準サンプルを準備する。
具体的には、S11で準備した標準サンプルをパーティクルカウンター装置で測定し、実散乱光強度のメジアン値(中央値)を求める。このとき、測定値は、パーティクルサイズでキャリブレーションされた値ではなく、散乱光強度の実測値である必要がある。
測定された実散乱光強度のメジアン値を、標準サンプルを形成したときの実散乱光強度の初期値のメジアン値(以下、「標準値」と称する)と比較して、標準値からのずれに基づいて、ヘイズ値のキャリブレーションを行う。
同様に標準サンプルが多少曇っている場合でも、標準粒子の付着していない場所からの実散乱光強度は影響を受けるものの、標準粒子からの実散乱光強度は殆ど影響を受けない。それは、標準粒子からの散乱光は、曇りに対する散乱光に比べ十分に大きいためである。
具体的には、ヘイズ管理している製造工程におけるウエハを準備する。
具体的には、S12でヘイズ値のキャリブレーションを行ったパーティクルカウンター装置を用いて、S13で準備したウエハ表面に入射した光の散乱強度から基板表面のヘイズ値を求める。
ここで、図3にヘイズの測定例を示す。図3(a)はヘイズマップを示しており、ヘイズのウエハ内の面内分布を示している。図3(a)において、色の薄い領域はヘイズ値が大きい(表面の凹凸が大きい)領域であり、色の濃い領域はヘイズ値が小さい(表面の凹凸が小さい)部分である。図3(b)は、ヘイズ値分布を示しており、横軸はヘイズ値であり、縦軸はカウント数である。なお、図3(b)において、矢印で示した箇所が、散乱光強度のメジアン値に相当している。
図2(a)に示すウエハを標準サンプルとして用いれば、8種類の散乱光強度について、同時にキャリブレーションを行うことができ、効率よく、高精度のキャリブレーションを行うことができる。
このようにしてヘイズ値を求めれば、効果的にヘイズの測定精度を向上させることができる。
このようにして複数のパーティクルカウンター装置間のヘイズ値のキャリブレーションを行えば、複数のパーティクルカウンター装置を用いた際のヘイズの測定精度を向上させることができる。
PSL(ポリスチレン・ラテックス)標準粒子(粒径0.12μm)を塗布したウエハから検出される散乱光強度のメジアン値、換算後のPLS標準粒子サイズの経時変化を測定した。測定は、いずれも同じパーティクルカウンター装置を用いて行った。結果を図4(a)、(b)に示す。ここで、図4(a)は散乱光強度のメジアン値の経時変化を示し、図4(b)は、換算後のPLS標準粒子サイズの経時変化を示している。
実験例1で用いたウエハの特定位置から検出されるヘイズ値の経時変化を測定した。ここで、実験例2においては、標準粒子からの散乱光を疑似的にヘイズからの散乱光と捉えて、ヘイズの測定を行った。測定は、実験例1と同じパーティクルカウンター装置を用いて行った。結果を図4(c)に示す。
パーティクルサイズは、散乱光強度と標準粒子サイズでキャリブレーションすることで、装置の状況が変わっても、同じサイズのパーティクルを同じサイズとして出力ができる。一方、実験例1、2の結果によれば、既知サイズの標準粒子から発生する散乱光強度のメジアン値の経時変化をモニタリングすることで、間接的にヘイズ値の経時変化のモニタリングを行うことができることが確認できた。
散乱光を用いたパーティクルカウンター装置において、粒径0.12μmのPSL標準粒子を塗布したウエハ(標準サンプル)から発生する散乱光強度のメジアン値の経時変化のモニタリングを行い、散乱光強度のメジアン値が0.90倍になった。この時、ヘイズ値の換算率を1.11倍することで、パーティクルカウンター装置の経時変化を相殺したヘイズ値を求めることができた。
2台の散乱光を用いたパーティクルカウンター装置(以下、「装置A」、「装置B」と称する)のそれぞれにおいて、粒径0.12μmのPSL標準粒子を塗布したウエハ(標準サンプル)から発生する散乱光強度のメジアン値を求めた。装置Bでの散乱光強度のメジアン値は、装置Aの散乱光強度のメジアン値の1.20倍となった。この時、装置Bで測定したノイズ値の補正値を0.83倍とすることで、パーティクルカウンター装置間の変動を相殺したヘイズ値を求めることができた。
Claims (3)
- 散乱光を用いたパーティクルカウンター装置により基板表面のヘイズを評価する方法であって、
前記基板表面に入射した光の散乱光強度から前記基板表面のヘイズ値を求める際に、標準サンプルを用いてヘイズ値のキャリブレーションを行い、前記標準サンプルとして標準粒子を塗布したサンプルを用いることを特徴とするヘイズの評価方法。 - 前記標準サンプルの表面に入射した光の散乱光強度の経時変化をモニタリングし、前記標準サンプルの散乱光強度の変化率に基づいて、ヘイズ値の換算率を変更することにより、ヘイズ値を求めることを特徴とする請求項1に記載のヘイズの評価方法。
- 複数の前記パーティクルカウンター装置で前記標準サンプルの散乱光強度を測定し、測定された前記標準サンプルの散乱光強度の値に基づいて、ヘイズ値の補正係数を決めることにより、複数の前記パーティクルカウンター装置間のヘイズ値のキャリブレーションを行うことを特徴とする請求項1又は請求項2に記載のヘイズの評価方法。
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CN201680027570.7A CN107615468B (zh) | 2015-05-13 | 2016-03-10 | 雾度的评价方法 |
US15/570,278 US10234281B2 (en) | 2015-05-13 | 2016-03-10 | Method for evaluating haze |
DE112016001802.9T DE112016001802T5 (de) | 2015-05-13 | 2016-03-10 | Verfahren zum Bewerten einer Trübung |
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JP7054634B2 (ja) * | 2018-02-21 | 2022-04-14 | セーレン株式会社 | 測定装置 |
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US20180128606A1 (en) | 2018-05-10 |
US10234281B2 (en) | 2019-03-19 |
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DE112016001802T5 (de) | 2018-01-25 |
CN107615468A (zh) | 2018-01-19 |
CN107615468B (zh) | 2020-06-19 |
KR20180006912A (ko) | 2018-01-19 |
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