WO2016180246A1 - 蓝宝石的激光加工方法、设备和存储介质 - Google Patents

蓝宝石的激光加工方法、设备和存储介质 Download PDF

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Publication number
WO2016180246A1
WO2016180246A1 PCT/CN2016/080638 CN2016080638W WO2016180246A1 WO 2016180246 A1 WO2016180246 A1 WO 2016180246A1 CN 2016080638 W CN2016080638 W CN 2016080638W WO 2016180246 A1 WO2016180246 A1 WO 2016180246A1
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WIPO (PCT)
Prior art keywords
image
sapphire
crack
coordinates
offset parameter
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PCT/CN2016/080638
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English (en)
French (fr)
Inventor
王焱华
陈治贤
庄昌辉
马国东
李福海
朱炜
尹建刚
高云峰
Original Assignee
大族激光科技产业集团股份有限公司
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Application filed by 大族激光科技产业集团股份有限公司 filed Critical 大族激光科技产业集团股份有限公司
Priority to US15/321,946 priority Critical patent/US10625375B2/en
Priority to DE112016000051.0T priority patent/DE112016000051T5/de
Priority to JP2016569063A priority patent/JP6371862B2/ja
Priority to MYPI2016703988A priority patent/MY192764A/en
Publication of WO2016180246A1 publication Critical patent/WO2016180246A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the actual cracking direction of the single finished core particle after laser cutting is r-plane in the m-plane, which will cause the laser processing point of the CCD camera to align with the actual wafer cracking position, resulting in actual crack deviation.
  • the actual crack position does not extend to the chip emitting electrode region (electrode), but in actual processing, it is necessary to increase the yield as much as possible, so that the width of the cutting track becomes smaller and smaller. Since the crack deviates from the middle position of the cutting track, the chip light-emitting electrode area will be scratched, thereby affecting the final yield.
  • the sapphire is further processed in accordance with the adjusted laser processing position.
  • An apparatus for laser processing of sapphire comprising a memory and a processor, wherein the memory stores instructions, wherein when the instructions are executed by the processor, the performing the following steps is performed:
  • FIG. 2 is a schematic view showing a cutting direction of a sapphire wafer provided by an embodiment
  • the laser beam 3 is perpendicularly incident into the interior of the sapphire substrate to form the laser fringe 4, and the incident position of the laser beam 3 is aligned with the o-point of the intermediate position of the scribe line 2,
  • the actual crack 5 is not at the O point in the middle of the scribe line 2, resulting in a serious edge of the electrode surface, which affects the processing yield.
  • the width of the scribe line 2 is less than 30 um, or even less, the crack 5 is easily cracked onto the electrode 1, resulting in defective products.
  • a laser processing method for sapphire is provided.
  • This embodiment is exemplified by the method 7 applied to the apparatus 7 of the sapphire laser processing system of Fig. 4.
  • the sapphire laser processing control program is run on the device 7, and the sapphire laser processing method is implemented by the sapphire laser processing control program, and the method specifically includes the following steps:
  • Step 502 Obtain an image of sapphire during sapphire processing.
  • step 502 includes processing the sapphire at an intermediate position point of any scribe line to cause cracking of the sapphire; and obtaining an image of the sapphire after the crack is generated.
  • the laser is first aligned to the middle position O of any one of the dicing streets 20, and the laser beam 30 is aligned with the middle point O of the dicing street 20 to be perpendicularly directed toward the sapphire substrate. And forming a laser fringe 40 inside the sapphire will produce an actual crack 50 which is not at the O point in the middle of the scribe line 20.
  • the device 7 acquires an image of the sapphire producing the crack 50 by a CCD camera, and the device 7 displays a sapphire image in which the crack 50 is generated, and a crack 50 of the sapphire is observed from the sapphire image.
  • obtaining an image of the sapphire after the crack is generated includes: controlling the light source to illuminate the light generated by the light source onto the cracked sapphire, and obtaining an image when the sapphire is illuminated by the light.
  • acquiring an image when the sapphire is illuminated by the light comprises: transmitting an image acquisition instruction to the CCD camera to cause the CCD camera to image the sapphire when the light is illuminated in the field of view according to the image acquisition instruction.
  • the device 7 controls the point source 8 and the surface source 22.
  • the point light source 8 passes through the convex lens 9, the 45 degree mirror 10, the convex lens 11, and the transflective mirror 12, and enters the focusing mirror 17.
  • the convex lens 9 and the convex lens 11 are a set of conjugate lenses, and the purpose is to turn the divergent point light source 8 into In parallel light, the point source 8 is white light.
  • the parallel white light enters the focusing mirror and is focused on the back surface of the sapphire 18, and is reflected back to the transflective mirror 12, then enters the convex lens 13, and finally enters the CCD camera 14, and the relative distance between the CCD camera 14 and the back surface of the sapphire 18 is properly adjusted to make the CCD camera 14 Get an image of the back of the sapphire 18.
  • the near-infrared light emitted by the surface light source 22 passes through the stage 19, the sapphire 18, the focusing mirror 17, the transflective mirror 12 and the convex lens 13, and finally enters the CCD camera 14, and the relative distance between the CCD camera 14 and the back surface of the sapphire 18 is reasonably adjusted.
  • the CCD camera 14 can be made to acquire an image of the back side of the sapphire 18.
  • the CCD camera 14 can be simultaneously used for alignment of the electrode surface cutting track on the front side of the sapphire.
  • the front surface of the sapphire 18 is composed of a single core particle 20 which is periodically arranged and cut along the a-axis direction. 2 has a certain width, and the center 21 of the CCD camera 14 is a cross line for the purpose of aligning and identifying the scribe line 2, and the center of the CCD camera 14 and the center of the scribe line 2 are coincident before cutting.
  • Figure 8 can be considered to be an imaged image displayed by the display of device 7, with the center crosshair of CCD camera 14 at the geometric center of the image of the display image. The image is obtained by opening the surface light source 22 of Fig. 7 and adjusting the relative distance of the CCD camera 14 and the surface of the sapphire 18 as appropriate.
  • the surface light source 22 can pass through the stage and the sapphire 18, so that the image in the plane of any thickness of the entire sapphire thickness direction can be captured by the CCD camera 14, including the electrode diagram of the sapphire front surface, the cut road image, and the interior of the sapphire. Laser fringe 4, cracked image on the back of sapphire, etc.
  • Obtaining images in different thickness directions can be achieved by adjusting the relative distance between the CCD camera 14 and the sapphire 18.
  • the surface light source 22 and the point light source 8 can be simultaneously turned on, the focus of the focusing mirror is adjusted to the back surface of the sapphire, and the brightness of the surface light source and the point light source is adjusted to optimize the crack resolution of the surface.
  • the coating on the back side of the sapphire may be different, resulting in a difference in the effect of imaging.
  • the present invention provides two kinds of light sources for imaging, which can solve the imaging difference caused by the coating, and make the crack on the back surface of the sapphire easy to recognize and image. collection.
  • the point source 8 may be a white point source
  • the surface source 22 may be a near-infrared source.
  • step 504 edge detection is performed on the image to obtain the coordinates of the crack.
  • the device 7 when acquiring the image of the sapphire, the device 7 performs denoising processing on the image, calls the edge detection algorithm on the denoised image to perform edge detection, determines the crack edge by edge detection, and points the edge on the crack edge in the image. Coordinates form a set of coordinates.
  • Step 506 determining an offset parameter according to the coordinates of the crack.
  • Step 508 adjusting the laser processing position according to the offset parameter.
  • the center of the image displayed on the device 7 corresponds to the laser processing position, which is the position at which the laser beam 16 is incident on the sapphire.
  • the device 7 can adjust the position at which the laser beam 16 is incident on the sapphire based on the obtained offset parameter.
  • the position where the laser beam 30 is generated inside the wafer is adjusted, and the laser processing position is adjusted in such a direction that the crack is directed to the center of the cutting track.
  • the laser processing position is adjusted to the right so that the crack 50' is located just at the middle point of the scribe line.
  • the distance adjusted to the right is not more than half of the width of the cutting track. Further, the distance adjusted to the right is equal to the distance between the crack 50 and the point O in the middle of the cutting track.
  • step 510 the sapphire is further processed according to the adjusted laser processing position.
  • the device 7 controls the laser generator such that the laser beam 16 generated by the laser generator is injected into the sapphire according to the adjusted laser processing position, and the sapphire is further processed.
  • an image of sapphire during sapphire processing is obtained when the sapphire is processed.
  • the coordinates of the sapphire crack are detected, the offset parameter is determined according to the coordinates of the crack, and the laser processing position is adjusted according to the offset parameter.
  • the offset parameters are obtained according to the coordinates of the crack in the image, which can improve the precision of sapphire processing during processing, and improve the quality of sapphire processing with the improvement of sapphire processing precision.
  • step 504 includes the steps of image processing, the specific steps are as follows:
  • Step 902 generating a gray histogram of the image.
  • the device 7 calculates the number of pixels of each gray value in the acquired image, and calculates the frequency of occurrence of each gray value according to the number of pixels of each gray value, according to each calculated
  • the grayscale histogram is generated by the frequency at which the gray value appears.
  • step 904 the image is normalized according to the gray histogram.
  • the frequency of each gray value in the gray histogram is extracted, and the gray value is normalized according to the frequency of each gray value, so that the gray difference of the crack in the image is more obvious.
  • Step 906 performing edge detection on the normalized image to obtain the coordinates of the crack.
  • an edge detection algorithm is used for edge detection on the normalized image, edge of the crack of the sapphire in the image is detected by edge detection, and coordinates of the point on the edge of the crack in the image are extracted.
  • step 906 includes a drawing step of the region of interest, the specific steps including: drawing the region of interest in the normalized image; performing edge detection on the region of interest to obtain the coordinates of the crack.
  • step 906 includes the steps of edge detection of the image to obtain a crack profile; and extracting coordinates of the crack profile in the image.
  • the device 7 performs edge detection on the image using a canny operator (a multi-level edge detection algorithm), determines the edge of the crack of the sapphire in the image by edge detection of the canny operator, and calculates the point on the edge of the crack in the image.
  • the coordinate tuple is formed as [(x 1 , y 1 ), (x 2 , y 2 ), ...], further, the region of interest is drawn in the image, and the canny operator is used for the region of interest Perform edge detection.
  • the image is normalized to ensure that the crack in the image is more obvious, and the crack in the image is more easily recognized, and the region of interest is drawn on the normalized image, and the crack is included in the region of interest.
  • the image reduces interference of images outside the region of interest and improves the accuracy of image processing.
  • step 506 includes the step of calculating an offset parameter, the step specifically including the following:
  • Step 1002 Acquire a center coordinate of the image.
  • the center coordinate of the image refers to the coordinates of the center of the field of view of the CCD camera 14, and may also be the coordinates of the center of the image captured by the CCD camera 14 displayed in the device 7, and the center of the image is in contact with the laser processing position. correspond.
  • the center of the image can be marked with a specific mark, such as a red dot or a cross mark.
  • the center coordinate of the image may be fixed. For example, the coordinate system is established with the center coordinate as the origin, and the center coordinate of the image is (0, 0).
  • the CCD captures a partial image of the sapphire after being magnified by a certain multiple.
  • the crack generated by the sapphire during the processing can be seen by magnifying a partial image of the sapphire of a certain multiple.
  • an average of the coordinates of the crack is calculated.
  • the coordinates corresponding to the points on the edge of the crack are extracted, and the average values of the coordinates of the different coordinate axes are respectively calculated, and the average value obtained according to the calculation result is the midpoint coordinate of the crack.
  • Step 1006 obtaining an offset parameter according to the average value and the center coordinate.
  • the relative position of the crack to the center of the image can be determined, and the center of the image corresponds to the laser processing position, and the offset parameter of the laser processing position and the crack can be obtained.
  • step 1006 includes: calculating a difference parameter based on the difference between the calculated average value and the center coordinate; the offset parameter includes an offset direction and an offset distance.
  • the average value of the calculated crack center is extracted, the difference between the average value and the center coordinate is calculated, and the offset direction of the center of the crack and the center of the image is determined according to whether the difference is less than 0, and the absolute value of the difference is the offset distance.
  • the coordinate set of points on the edge of the crack is [(x 1 , y 1 ), (x 2 , y 2 ), ...], and the center coordinate of the image is (x 0 , y 0 ) on the edge of the crack.
  • the average value of the y-coordinate value of the point and the y-coordinate value y 0 of the center of the image, the difference between the average value and y 0 is calculated, and the absolute value of the difference between the average value and the coordinate value y 0 of the center is recorded
  • step 510 includes extracting an offset direction and an offset distance from the offset parameters; moving the laser machining position in the offset direction by a distance equal to the offset distance.
  • FIG. 11 is an image collected by the CCD camera 14 displayed on the device 7, in which the crack 1102 is downwardly shifted with respect to the center of the image.
  • the offset parameter is that the crack 1102 is offset downward relative to the center of the image, and the sapphire crack is moved upward relative to the center of the image by adjusting the stage, and the moving distance is equal to the offset distance.
  • the offset parameter of the sapphire crack and the laser processing position is determined by calculation, the accuracy of the judgment is improved, and the laser processing position is adjusted to the center of the crack according to the offset parameter, and the sapphire is performed from the crack. Processing improves the yield of good products.
  • an apparatus for laser processing of sapphire comprising a memory and a processor having instructions stored therein, wherein when the instructions are executed by the processor, the following steps are performed:
  • obtaining an image of sapphire during sapphire processing includes:
  • Sapphire is processed at a point in the middle of any scribe line to cause cracking of the sapphire
  • obtaining an image of the sapphire after cracking comprises:
  • obtaining an image of the sapphire when illuminated by light comprises:
  • An image acquisition command is sent to the CCD camera to cause the CCD camera to image the sapphire when the light is illuminated in the field of view according to the image acquisition command.
  • the coordinates of the edge detection of the image to obtain the crack include:
  • Edge detection is performed on the normalized image to obtain the coordinates of the crack.
  • performing edge detection on the normalized image to obtain crack coordinates includes:
  • Edge detection of the region of interest results in the coordinates of the crack.
  • the coordinates of the edge detection of the image to obtain the crack include:
  • the offset parameter is determined according to the difference, and the offset parameter includes an offset direction and an offset distance.
  • an image of sapphire during sapphire processing is obtained when the sapphire is processed.
  • the coordinates of the sapphire crack are detected, the offset parameter is determined according to the coordinates of the crack, and the laser processing position is adjusted according to the offset parameter.
  • the offset parameters are obtained according to the coordinates of the crack in the image, which can improve the precision of sapphire processing during processing, and improve the quality of sapphire processing with the improvement of sapphire processing precision.
  • the sapphire continues to be processed according to the adjusted laser processing position.
  • an image of sapphire during sapphire processing is obtained when the sapphire is processed.
  • the coordinates of the sapphire crack are detected, the offset parameter is determined according to the coordinates of the crack, and the laser processing position is adjusted according to the offset parameter.
  • the offset parameters are obtained according to the coordinates of the crack in the image, which can improve the precision of sapphire processing during processing, and improve the quality of sapphire processing with the improvement of sapphire processing precision.
  • the storage medium may be a magnetic disk, an optical disk, or a read-only storage memory (Read-Only)
  • a nonvolatile storage medium such as a memory or a ROM, or a random access memory (RAM).

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Abstract

一种蓝宝石的激光加工方法，包括：获取蓝宝石加工时的图像；对所述图像进行边缘检测得到裂纹坐标；根据所述裂纹的坐标确定偏移参数；根据所述偏移参数调整激光加工位置；按照调整后的激光加工位置对所述蓝宝石继续加工；一种用于蓝宝石的激光加工设备，包括存储器和处理器，所述存储器中存储有被所述处理器执行的指令，所述指令为蓝宝石的激光加工步骤；一个或多个存储有计算机可执行指令的非易失性计算机可读存储介质，所述计算机可执行指令为蓝宝石的激光加工步骤，被所述处理器执行。采用所述蓝宝石的激光加工方法可提高蓝宝石加工的精度和质量。

Description

蓝宝石的激光加工方法、设备和存储介质
本申请要求于2015年5月12日提交中国专利局，申请号为201510239300.X，发明名称为“蓝宝石的激光切割方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
【技术领域】
本发明涉及激光加工技术领域，特别是涉及一种蓝宝石的激光加工方法、设备和存储介质。
【背景技术】
在LED晶圆片等半导体等激光微细精密加工行业中，所使用的蓝宝石衬底大多是大面为c面的晶圆片，如图1所示，在LED晶圆激光切割工艺中，需要将整片圆形的晶圆片分割成若干个矩形的单个芯粒。两个相互垂直的切割方向一般对应蓝宝石晶体的a面和m面，并且a面和m面都与c面垂直。由于m面靠近r面（解理面），并且r面与c面不垂直且有一定的斜角。激光切割后的单个成品芯粒在m面实际的裂开方向是r面，这样会造成CCD相机对位的激光加工点与实际晶圆片裂开的位置有一定的偏差，导致实际裂纹偏离的切割道中间，当切割道的宽度较大时，实际裂纹位置没有延伸到芯片发光电极区(电极)处，但在实际加工，需要尽可能的增加产量，使得切割道的宽度越来越小，由于裂纹偏离切割道中间位置，将会划伤芯片发光电极区，从而影响最终良品率。
【发明内容】
根据本申请的各种实施例，提供一种蓝宝石的激光加工方法、设备和存储介质。
一种蓝宝石的激光加工方法，包括：
获取蓝宝石加工时所述蓝宝石的图像；
对所述图像进行边缘检测得到裂纹的坐标；
根据所述裂纹的坐标确定偏移参数；
根据所述偏移参数调整激光加工位置；及
按照调整后的激光加工位置对所述蓝宝石继续加工。
一种用于蓝宝石的激光加工的设备，包括存储器和处理器，所述存储器中存储有指令，其特征在于，所述指令被所述处理器执行时，可使得所述执行以下步骤：
获取蓝宝石加工时所述蓝宝石的图像；
对所述图像进行边缘检测得到裂纹的坐标；
根据所述裂纹的坐标确定偏移参数；
根据所述偏移参数调整激光加工位置；及
按照调整后的激光加工位置对所述蓝宝石继续加工。
一个或多个存储有计算机可执行指令的非易失性计算机可读存储介质，所述计算机可执行指令被一个或多个处理器执行时，可使得所述一个或多个处理器执行以下步骤：
获取蓝宝石加工时所述蓝宝石的图像；
对所述图像进行边缘检测得到裂纹的坐标；
根据所述裂纹的坐标确定偏移参数；
根据所述偏移参数调整激光加工位置；及
按照调整后的激光加工位置对所述蓝宝石继续加工。
本发明的一个或多个实施例的细节在下面的附图和描述中提出。本发明的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
【附图说明】
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为一个实施例提供的蓝宝石结构示意图；
图2为一个实施例提供的蓝宝石晶圆片切割方向示意图；
图3为传统技术中蓝宝石晶圆片延切割道中心位置的切割示意图；
图4为一个实施例中蓝宝石的激光加工系统的应用环境图；
图5为一个实施例中蓝宝石的激光加工方法的流程示意图；
图6为一个实施例中蓝宝石晶圆片延切割道中心位置的切割示意图；
图7为一个实施例中调整加工位置后的蓝宝石的切割示意图；
图8为一个实施例中蓝宝石的加工面与图像的中心的相对位置的示意图；
图9为一个实施例中裂纹坐标的提取的流程示意图；
图10为一个实施例中偏移参数的计算的流程示意图；
图11为一个实施例采集的图像中裂纹位置的示意图。
【具体实施方式】
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
如图1所示的蓝宝石晶体结构，在LED行业中的蓝宝石衬底为大面为c面的晶圆片，所述晶圆片切割的两个相互垂直的切割面是m面和a面，如图2所示，晶圆片的所需要的两个切割方向为m轴和a轴，分别垂直于m面和a面，其中平口边平行于m轴向，图2是图1在c面的投影。
由图1可知，m面靠近r面（解理面），由于蓝宝石晶体的r面本身特性，在对m面进行切割时，一般容易在r面优先裂开。所以，经过激光切割之后，m面实际裂开的方向是r面，这样加工后的样品r面和c面有一定的斜裂角度。
如图3所示，在LED晶圆激光切割行业，激光的加工方式是激光聚焦在蓝宝石衬底内部形成激光炸点，利用激光炸点形成的应力将蓝宝石裂开。蓝宝石衬底上生长了有周期性图形的电极1，电极的图形为矩形，并且由相互垂直的切割道2来分开。由于r面的斜裂性质，容易使实际的裂开位置不在切割道2中间，严重的情况下甚至会斜裂到电极1的图形区，产生不良品，降低切割的良率。
从a面的横截面来看r面的斜裂方向，激光光束3垂直入射到蓝宝石衬底内部形成激光炸点4，并且激光光束3的入射位置是对准了切割道2中间位置O点，但由于r面的存在，实际的裂纹5不在切割道2中间位置O点处，导致电极面大小边严重，影响加工良率。当切割道2的宽度小于30um，甚至更小时，裂纹5容易裂开到电极1上，产生不良品。
图4为一种蓝宝石的激光加工系统的应用环境图，在蓝宝石的激光加工系统中，设备7为加工环境中的控制设备，可以对蓝宝石的激光加工方法的应用环境中的各部件进行控制。激光聚焦镜17兼具激光加工功能和成像功能，CCD相机14用来观察蓝宝石晶圆18的表面图像及裂纹。成像的具体步骤是，进一步地，同时打开点光源8和面光源22，可以使蓝宝石18背面的成像效果达到最佳，容易识别，便于图像采集。并且CCD相机14和设备7连接，设备7的显示器可以显示整个CCD相机视场范围内的成像图像。激光光束16经过透反镜12进入聚焦镜17，调整焦点到蓝宝石18的内部，形成激光炸点4，载台19沿着a轴方向做直线匀速运动，从而加工蓝宝石的m面。
如图5所示，提供一种蓝宝石的激光加工方法，本实施例以该方法应用在图4蓝宝石的激光加工系统中作为设备的设备7来举例说明。设备7上运行有蓝宝石激光加工控制程序，通过蓝宝石激光加工控制程序来实施蓝宝石的激光加工方法，该方法具体包括以下步骤：
步骤502，获取蓝宝石加工时蓝宝石的图像。
具体地，在蓝宝石加工时，设备7可以通过CCD相机14获取蓝宝石的图像，CCD相机14与设备7连接。CCD相机14将视场内蓝宝石的图像传输给设备7，设备7将CCD相机14视场内的图像显示在显示屏上。图像为激光加工时，CCD按照一定倍数放大后所拍摄到蓝宝石的局部图像，对蓝宝石的加工过程中，可以通过放大一定倍数的蓝宝石的局部图像可以看到蓝宝石在加工过程中产生的裂纹。
在一个实施例中，步骤502包括：延任意切割道中间位置点对蓝宝石进行加工使所述蓝宝石产生裂纹；获取产生裂纹后蓝宝石的图像。
具体地，请参考图6，在m面，首先使激光对准任意一切割道20的中间位置O点进行加工，激光光束30对准切割道20的中间位置O点垂直射向蓝宝石衬底，并且在蓝宝石内部形成激光炸点40，将产生实际裂纹50，裂纹50不在切割道20的中间位置O点。设备7通过CCD相机获取产生裂纹50的蓝宝石的图像，设备7将产生裂纹50的蓝宝石图像显示，从蓝宝石图像中可观察到蓝宝石的裂纹50。通过减小切割道20宽度，以增大同一晶圆片生产的单个芯片的产量。蓝宝石包括正面和带有电极10的背面，所述背面上由相互交错的切割道20，所述电极10被切割道20分离。
在一个实施例中，获取产生裂纹后蓝宝石的图像包括：对光源进行控制使光源产生的光照射到产生裂纹的蓝宝石上，获取蓝宝石被光照射时的图像。
在一个实施例中，获取蓝宝石被光照射时的图像包括：向CCD相机发送图像采集指令，使CCD相机根据图像采集指令在采集视场内的被光照射时蓝宝石的图像。
具体地，请参照图4，设备7对点光源8和面光源22进行控制。其中点光源8经过凸透镜9，45度反射镜10，凸透镜11，透反镜12后，进入聚焦镜17，凸透镜9和凸透镜11为一组共轭镜片，目的是将发散的点光源8变成平行光，点光源8为白光。平行的白光进入聚焦镜后聚焦与蓝宝石18的背面，并反射回透反镜12，再进入凸透镜13，最后进入CCD相机14，合理调整CCD相机14和蓝宝石18背面的相对距离，使CCD相机14获取蓝宝石18背面的图像。同时，面光源22发射出的近红外光透过载台19、蓝宝石18、聚焦镜17、透反镜12及凸透镜13，最后进入CCD相机14，合理调整CCD相机14和蓝宝石18背面的相对距离，可以使CCD相机14获取蓝宝石18背面的图像。
请参照图4和图8，CCD相机14同时可用于对蓝宝石正面的电极面切割道的对位，蓝宝石18的正面由周期性排列的单个芯粒20组成，沿着a轴方向切割，切割道2具有一定的宽度，CCD相机14的中心21为一个十字线，目的是为了对位和识别切割道2，在切割前使CCD相机14的中心和切割道2的中心重合。特别地，图8可以认为是设备7的显示器所显示的成像图像，CCD相机14的中心十字线位于显示器图像成像的几何中心。该图像的获得途径是打开图7中的面光源22，并合理的调整CCD相机14和蓝宝石18表面的相对距离。
其中，面光源22可以透过载台和蓝宝石18，所以整个蓝宝石厚度方向的任意一个厚度的平面内的图像都可以被CCD相机14捕捉到，包括蓝宝石正面的电极图，切割道图像，蓝宝石内部的激光炸点4，蓝宝石背面的裂纹的图像等。获取不同厚度方向内的图像可以通过调整CCD相机14和蓝宝石18的相对距离来实现。特别地，针对蓝宝石背面的裂纹，可同时打开面光源22和点光源8，将聚焦镜的焦点调整到蓝宝石的背面，调整面光源和点光源的亮度，使表面的裂纹清晰度到达最佳，最容易被CCD相机14采集到。在LED芯片的制作过程中，蓝宝石背面的镀膜会有差异，导致成像的效果会有差异，本发明提供两种光源来成像，可以解决镀膜导致的成像差异，使蓝宝石背面的裂纹容易识别和图像采集。进一步地，点光源8可以是白光点光源，面光源22可以是近红外面光源。
步骤504，对图像进行边缘检测得到裂纹的坐标。
具体地，设备7在获取到蓝宝石的图像时，对图像进行去噪处理，对去噪后的图像调用边缘检测算法进行边缘检测，通过边缘检测确定裂纹边缘，并裂纹边缘上点在图像中的坐标，形成坐标集合。
步骤506，根据裂纹的坐标确定偏移参数。
具体地，获取图像中的中心坐标，将裂纹边缘上点的坐标与中心坐标进行比较，从而确定裂纹相对于图像的中心的偏移参数，偏移参数可以用于表示裂纹与图像的中心的位置关系。
步骤508，根据偏移参数调整激光加工位置。
具体地，设备7上显示的图像的中心与激光加工位置对应，激光加工位置为激光光束16入射蓝宝石的位置。设备7根据得到的偏移参数可以对激光光束16入射蓝宝石的位置进行调整。
在一个实施例中，请参照图6和图7，调整激光30在晶圆片内部产生激光炸点40’的位置，激光加工位置的调整方向为使得裂纹指向切割道中心的方向，在本实施例中，由于需要将在切割道20的中间位置O点进行加工产生的裂纹50靠右偏移，所以，需要将激光加工位置向右调整，使得裂纹50’刚好位于切割道的中间位置O点。其中，向右调整的距离不大于切割道的宽度的一半。进一步地，向右调整的距离等于裂纹50到切割道中间位置O点之间的距离。
步骤510，按照调整后的激光加工位置对蓝宝石继续加工。
具体地，设备7对激光发生器进行控制，是激光发生器产生的激光光束16按照调整后的激光加工位置射入蓝宝石，对蓝宝石继续进行加工。
本实施例中，在对蓝宝石进行加工时，获取蓝宝石加工时蓝宝石的图像。通过对获取到的图像进行分析处理，检测得到蓝宝石裂纹的坐标，根据裂纹的坐标确定偏移参数，根据偏移参数对激光加工位置进行调整。通过图像处理最终根据图像中裂纹的坐标得到偏移参数，可以提高加工过程中蓝宝石加工的精度，同时随着蓝宝石加工精度的提升，也提高了蓝宝石加工的质量。
如图9所示，在一个实施例中，步骤504包括图像处理的步骤，具体步骤如下：
步骤902，生成图像的灰度直方图。
具体地，设备7对获取到的图像中每种灰度值的像素的个数，并根据每种灰度值的像素的个数计算每种灰度值出现的频率，根据计算得到的每种灰度值出现的频率生成灰度直方图。
步骤904，根据灰度直方图对图像进行归一化处理。
具体地，提取灰度直方图中每种灰度值的频率，根据每种灰度值的频率对图像进行灰度值的归一化处理，使得图像中裂纹的灰度区别更加明显。
步骤906，对经过归一化处理的图像进行边缘检测以得到裂纹的坐标。
具体地，对经过归一化的图像采用边缘检测算法进行边缘检测，通过边缘检测检测到图像中蓝宝石的裂纹的边缘，并提取裂纹边缘上的点在图像中的坐标。
在一个实施例中，步骤906包括感兴趣区域的绘制步骤，具体步骤包括以下内容：在经过归一化处理的图像中绘制感兴趣区域；对感兴趣区域进行边缘检测得到裂纹的坐标。
在一个实施例中，步骤906包括如下步骤：对图像进行边缘检测获取裂纹轮廓；提取裂纹轮廓在图像中的坐标。
具体地，设备7对图像利用canny算子（一种多级边缘检测算法）进行边缘检测，通过canny算子的边缘检测确定图像中蓝宝石的裂纹的边缘，并计算裂纹的边缘上的点在图像中的坐标，形成坐标元组为［(x1,y1), (x2,y2), ……］，进一步地，在图像中绘制感兴趣区域，并对感兴趣区域利用canny算子进行边缘检测。
本实施中，对图像进行归一化处理，保证图像中的裂纹更加明显，使图像中的裂纹更加容易被识别，对归一化处理的图像绘制感兴趣区域，在感兴趣区域中包括裂纹的图像，减少感兴趣区域之外的图像的干扰，提高了图像处理的准确性。
在一个实施例中，步骤506包括计算偏移参数的步骤，该步骤具体包括以下内容：
步骤1002，获取图像的中心坐标。
具体地，图像的中心坐标是指CCD相机14的视场的中心的坐标，也可以是设备7中所显示的CCD相机14所采集到的图像的中心的坐标，图像的中心与激光加工位置相对应。图像的中心可以用特定标记进行标记，例如红点或者十字标记。图像的中心坐标具体可以是固定的，例如以中心坐标为原点建立坐标系，图像的中心坐标为（0，0）。图像为激光加工时，CCD按照一定倍数放大后所拍摄到蓝宝石的局部图像，对蓝宝石的加工过程中，可以通过放大一定倍数的蓝宝石的局部图像可以看到蓝宝石在加工过程中产生的裂纹。步骤1004，计算裂纹的坐标的平均值。
具体地，提取在裂纹的边缘上的点对应的坐标，分别计算不同坐标轴对应坐标的平均值，根据计算结果得到的平均值为裂纹的中点坐标。
步骤1006，根据平均值和中心坐标获取偏移参数。
具体地，将坐标的平均值和中心坐标进行比较，可以确定裂纹与图像的中心的相对位置，图像的中心与激光加工位置对应，即可得到激光加工位置与裂纹的偏移参数。
在一个实施例中，步骤1006包括：根据计算平均值与中心坐标的差值；根据差值确定偏移参数，偏移参数包括偏移方向和偏移距离。
具体地，提取计算得到的裂纹中心的平均值，计算平均值与中心坐标的差值，根据差值是否小于0确定裂纹中心与图像的中心的偏移方向，差值的绝对值为偏移距离。
举例说明，裂纹的边缘上点的坐标集合为［(x1,y1), (x2,y2), ……］，图像的中心坐标为（x0,y0）比较裂纹的边缘上点的y坐标值的平均值和图像的中心的y坐标值y0，求出平均值与y0的差值Distance，并记录平均值与中心的坐标值y0的差值的绝对值|D|，如果Distance>0，裂纹相对于图像的中心向上偏移，如果Distance<0，裂纹相对于图像的中心向下偏移，并且相对偏移距离为|D|。
在一个实施例中，步骤510包括：从偏移参数中提取偏移方向和偏移距离；将激光加工位置向偏移方向移动与偏移距离相等的距离。
举例说明，请参照图11，图11为设备7上显示的CCD相机14采集到的图像，图像中裂纹1102相对于图像的中心向下偏移。偏移参数为裂纹1102相对于图像的中心向下偏移，通过调整载台使蓝宝石的裂纹相对于图像的中心向上移动，移动距离与偏移距离相等。
本实施例中，通过计算来判断蓝宝石的裂纹与激光加工位置的偏移参数，提高了判断的准确性，并根据偏移参数将激光加工位置调整到裂纹的中心处，从裂纹处对蓝宝石进行加工，提高了良品的出产率。
在一个实施例中，提供一种用于蓝宝石的激光加工的设备，包括存储器和处理器，存储器中存储有指令，其特征在于，指令被处理器执行时，使得执行以下步骤：
获取蓝宝石加工时蓝宝石的图像；
对图像进行边缘检测得到裂纹的坐标；
根据裂纹的坐标确定偏移参数；
根据偏移参数调整激光加工位置；及
按照调整后的激光加工位置对蓝宝石继续加工。
在一个实施例中，获取蓝宝石加工时蓝宝石的图像包括：
延任意切割道中间位置点对蓝宝石进行加工使蓝宝石产生裂纹；及
获取产生裂纹后蓝宝石的图像。
在一个实施例中，获取产生裂纹后蓝宝石的图像包括：
对光源进行控制使光源产生的光照射到产生裂纹的蓝宝石上；及
获取蓝宝石被光照射时的图像。
在一个实施例中，获取蓝宝石被光照射时的图像包括：
向CCD相机发送图像采集指令，使CCD相机根据图像采集指令在采集视场内的被光照射时蓝宝石的图像。
在一个实施例中，对图像进行边缘检测得到裂纹的坐标包括：
生成图像的灰度直方图；
根据灰度直方图对图像进行归一化处理；及
对经过归一化处理的图像进行边缘检测以得到裂纹的坐标。
在一个实施例中，对经过归一化处理的图像进行边缘检测以得到裂纹的坐标包括：
在经过归一化处理的图像中绘制感兴趣区域；及
对感兴趣区域进行边缘检测得到裂纹的坐标。
在一个实施例中，对图像进行边缘检测得到裂纹的坐标包括：
对图像进行边缘检测获取裂纹轮廓；及
提取裂纹轮廓在图像中的坐标。
在一个实施例中，根据裂纹的坐标确定偏移参数包括：
获取图像的中心坐标；
计算裂纹的坐标的平均值；及
根据平均值和中心坐标获取偏移参数。
在一个实施例中，根据平均值和中心坐标获取偏移参数包括：
根据计算平均值与中心坐标的差值；及
根据差值确定偏移参数，偏移参数包括偏移方向和偏移距离。
在一个实施例中，根据偏移参数调整激光加工位置包括：
从偏移参数中提取偏移方向和偏移距离；及
将激光加工位置向偏移方向移动与偏移距离相等的距离。
本实施例中，在对蓝宝石进行加工时，获取蓝宝石加工时蓝宝石的图像。通过对获取到的图像进行分析处理，检测得到蓝宝石裂纹的坐标，根据裂纹的坐标确定偏移参数，根据偏移参数对激光加工位置进行调整。通过图像处理最终根据图像中裂纹的坐标得到偏移参数，可以提高加工过程中蓝宝石加工的精度，同时随着蓝宝石加工精度的提升，也提高了蓝宝石加工的质量。
在一个实施例中，提供一个或多个存储有计算机可执行指令的非易失性计算机可读存储介质，计算机可执行指令被一个或多个处理器执行时，使得一个或多个处理器执行以下步骤：
获取蓝宝石加工时蓝宝石的图像；
对图像进行边缘检测得到裂纹的坐标；
根据裂纹的坐标确定偏移参数；
根据偏移参数调整激光加工位置；及
按照调整后的激光加工位置对蓝宝石继续加工。
本实施例中，在对蓝宝石进行加工时，获取蓝宝石加工时蓝宝石的图像。通过对获取到的图像进行分析处理，检测得到蓝宝石裂纹的坐标，根据裂纹的坐标确定偏移参数，根据偏移参数对激光加工位置进行调整。通过图像处理最终根据图像中裂纹的坐标得到偏移参数，可以提高加工过程中蓝宝石加工的精度，同时随着蓝宝石加工精度的提升，也提高了蓝宝石加工的质量。
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的程序可存储于一计算机可读取存储介质中，该程序在执行时，可包括如上述各方法的实施例的流程。其中，所述的存储介质可为磁碟、光盘、只读存储记忆体（Read-Only Memory，ROM）等非易失性存储介质，或随机存储记忆体（Random Access Memory，RAM）等。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (21)

  1. 一种蓝宝石的激光加工方法，包括：
    获取蓝宝石加工时所述蓝宝石的图像；
    对所述图像进行边缘检测得到裂纹的坐标；
    根据所述裂纹的坐标确定偏移参数；
    根据所述偏移参数调整激光加工位置；及
    按照调整后的激光加工位置对所述蓝宝石继续加工。
  2. 根据权利要求1所述的方法，其特征在于，所述获取蓝宝石加工时所述蓝宝石的图像包括：
    延任意切割道中间位置点对蓝宝石进行加工使所述蓝宝石产生裂纹；及
    获取产生裂纹后蓝宝石的图像。
  3. 根据权利要求2所述的方法，其特征在于，所述获取产生裂纹后蓝宝石的图像包括：
    对光源进行控制使所述光源产生的光照射到产生裂纹的蓝宝石上；及
    获取所述蓝宝石被光照射时的图像。
  4. 根据权利要求3所述的方法，其特征在于，所述获取所述蓝宝石被光照射时的图像包括：
    向CCD相机发送图像采集指令，使所述CCD相机根据所述图像采集指令在采集视场内的被光照射时蓝宝石的图像。
  5. 根据权利要求1所述的方法，其特征在于，所述对所述图像进行边缘检测得到裂纹的坐标包括：
    生成所述图像的灰度直方图；
    根据所述灰度直方图对所述图像进行归一化处理；及
    对经过所述归一化处理的图像进行边缘检测以得到裂纹的坐标。
  6. 根据权利要求5所述的方法，其特征在于，所述对经过所述归一化处理的图像进行边缘检测以得到裂纹的坐标包括：
    在经过所述归一化处理的图像中绘制感兴趣区域；及
    对所述感兴趣区域进行边缘检测得到所述裂纹的坐标。
  7. 根据权利要求1所述的方法，其特征在于，所述对所述图像进行边缘检测得到裂纹的坐标包括：
    对所述图像进行边缘检测获取裂纹轮廓；及
    提取所述裂纹轮廓在所述图像中的坐标。
  8. 根据权利要求1所述的方法，其特征在于，所述根据所述裂纹的坐标确定偏移参数包括：
    获取所述图像的中心坐标；
    计算所述裂纹的坐标的平均值；及
    根据所述平均值和所述中心坐标获取偏移参数。
  9. 根据权利要求8所述的方法，其特征在于，所述根据所述平均值和所述中心坐标获取偏移参数包括：
    根据计算所述平均值与所述中心坐标的差值；及
    根据所述差值确定偏移参数，所述偏移参数包括偏移方向和偏移距离。
  10. 根据权利要求1所述的方法，其特征在于，所述根据所述偏移参数调整激光加工位置包括：
    从偏移参数中提取偏移方向和偏移距离；及
    将激光加工位置向所述偏移方向移动与所述偏移距离相等的距离。
  11. 一种用于蓝宝石的激光加工的设备，包括存储器和处理器，所述存储器中存储有指令，其特征在于，所述指令被所述处理器执行时，使得所述执行以下步骤：
    获取蓝宝石加工时所述蓝宝石的图像；
    对所述图像进行边缘检测得到裂纹的坐标；
    根据所述裂纹的坐标确定偏移参数；
    根据所述偏移参数调整激光加工位置；及
    按照调整后的激光加工位置对所述蓝宝石继续加工。
  12. 根据权利要求11所述的设备，其特征在于，所述获取蓝宝石加工时所述蓝宝石的图像包括：
    延任意切割道中间位置点对蓝宝石进行加工使所述蓝宝石产生裂纹；及
    获取产生裂纹后蓝宝石的图像。
  13. 根据权利要求12所述的设备，其特征在于，所述获取产生裂纹后蓝宝石的图像包括：
    对光源进行控制使所述光源产生的光照射到产生裂纹的蓝宝石上；及
    获取所述蓝宝石被光照射时的图像。
  14. 根据权利要求13所述的设备，其特征在于，所述获取所述蓝宝石被光照射时的图像包括：
    向CCD相机发送图像采集指令，使所述CCD相机根据所述图像采集指令在采集视场内的被光照射时蓝宝石的图像。
  15. 根据权利要求11所述的设备，其特征在于，所述对所述图像进行边缘检测得到裂纹的坐标包括：
    生成所述图像的灰度直方图；
    根据所述灰度直方图对所述图像进行归一化处理；及
    对经过所述归一化处理的图像进行边缘检测以得到裂纹的坐标。
  16. 根据权利要求15所述的设备，其特征在于，所述对经过所述归一化处理的图像进行边缘检测以得到裂纹的坐标包括：
    在经过所述归一化处理的图像中绘制感兴趣区域；及
    对所述感兴趣区域进行边缘检测得到所述裂纹的坐标。
  17. 根据权利要求11所述的设备，其特征在于，所述对所述图像进行边缘检测得到裂纹的坐标包括：
    对所述图像进行边缘检测获取裂纹轮廓；及
    提取所述裂纹轮廓在所述图像中的坐标。
  18. 根据权利要求11所述的设备，其特征在于，所述根据所述裂纹的坐标确定偏移参数包括：
    获取所述图像的中心坐标；
    计算所述裂纹的坐标的平均值；及
    根据所述平均值和所述中心坐标获取偏移参数。
  19. 根据权利要求18所述的设备，其特征在于，所述根据所述平均值和所述中心坐标获取偏移参数包括：
    根据计算所述平均值与所述中心坐标的差值；及
    根据所述差值确定偏移参数，所述偏移参数包括偏移方向和偏移距离。
  20. 根据权利要求11所述的设备，其特征在于，所述根据所述偏移参数调整激光加工位置包括：
    从偏移参数中提取偏移方向和偏移距离；及
    将激光加工位置向所述偏移方向移动与所述偏移距离相等的距离。
  21. 一个或多个存储有计算机可执行指令的非易失性计算机可读存储介质，所述计算机可执行指令被一个或多个处理器执行时，使得所述一个或多个处理器执行以下步骤：
    获取蓝宝石加工时所述蓝宝石的图像；
    对所述图像进行边缘检测得到裂纹的坐标；
    根据所述裂纹的坐标确定偏移参数；
    根据所述偏移参数调整激光加工位置；及
    按照调整后的激光加工位置对所述蓝宝石继续加工。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ309498B6 (cs) * 2018-03-14 2023-03-01 Disco Corporation Způsob výroby waferu a zařízení pro výrobu waferu

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104827191A (zh) 2015-05-12 2015-08-12 大族激光科技产业集团股份有限公司 蓝宝石的激光切割方法
CN106256477A (zh) * 2016-08-31 2016-12-28 安徽芯瑞达电子科技有限公司 暗部判断法激光切割方法
CN106449900B (zh) * 2016-08-31 2020-06-05 导装光电科技（深圳）有限公司 用于led白光芯片的切割工艺和装置
JP7286464B2 (ja) * 2019-08-02 2023-06-05 株式会社ディスコ レーザー加工装置
CN112775539A (zh) * 2019-11-07 2021-05-11 大族激光科技产业集团股份有限公司 激光加工方法及装置
CN111778561B (zh) * 2020-06-22 2021-11-02 福建晶安光电有限公司 一种蓝宝石衬底、加工方法及发光二极管的制备方法
JP2022097232A (ja) * 2020-12-18 2022-06-30 株式会社ディスコ レーザー加工装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10323780A (ja) * 1997-05-26 1998-12-08 Hitachi Constr Mach Co Ltd レーザ加工方法及び装置
JP2003088975A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2011181909A (ja) * 2010-02-02 2011-09-15 Mitsubishi Chemicals Corp 半導体チップ製造方法
CN103785957A (zh) * 2012-10-29 2014-05-14 三星钻石工业股份有限公司 激光加工装置及具有图案的基板的加工条件设定方法
CN104508799A (zh) * 2012-08-22 2015-04-08 浜松光子学株式会社 加工对象物切断方法
CN104584195A (zh) * 2012-08-22 2015-04-29 浜松光子学株式会社 加工对象物切割方法
CN104827191A (zh) * 2015-05-12 2015-08-12 大族激光科技产业集团股份有限公司 蓝宝石的激光切割方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5727433A (en) * 1995-09-08 1998-03-17 Gerber Garment Technology, Inc. Method for cutting sheet material
JP2001210905A (ja) * 1995-12-04 2001-08-03 Nichia Chem Ind Ltd 窒化物半導体発光素子の製造方法
US6420245B1 (en) * 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
WO2002040970A1 (en) * 2000-11-15 2002-05-23 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
CN1260800C (zh) * 2001-09-19 2006-06-21 奥林巴斯光学工业株式会社 半导体晶片检查设备
US6580054B1 (en) * 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
US6960813B2 (en) * 2002-06-10 2005-11-01 New Wave Research Method and apparatus for cutting devices from substrates
JP4750720B2 (ja) * 2004-12-08 2011-08-17 三星ダイヤモンド工業株式会社 被分割体における分割起点形成方法、被分割体の分割方法
US8331019B2 (en) * 2007-01-26 2012-12-11 New York University Holographic microscopy of holographically trapped three-dimensional nanorod structures
JP5203787B2 (ja) * 2008-04-17 2013-06-05 株式会社日立ハイテクノロジーズ データ解析装置
JP5414467B2 (ja) * 2009-11-09 2014-02-12 キヤノン株式会社 レーザ加工方法
JP5645432B2 (ja) * 2010-03-19 2014-12-24 キヤノン株式会社 画像処理装置、画像処理システム、画像処理方法、及び画像処理をコンピュータに実行させるためのプログラム
JP5378314B2 (ja) * 2010-07-15 2013-12-25 株式会社レーザーシステム レーザ切断方法
JP5201185B2 (ja) * 2010-09-14 2013-06-05 オムロン株式会社 観察光学系およびレーザ加工装置
US8722516B2 (en) * 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
JP2012089709A (ja) * 2010-10-20 2012-05-10 Disco Abrasive Syst Ltd ワークの分割方法
KR102086145B1 (ko) * 2010-12-13 2020-03-09 한국전자통신연구원 인트라 예측 방법 및 그 장치
JP5886603B2 (ja) * 2011-11-11 2016-03-16 株式会社ディスコ 光デバイスウエーハの加工方法
US9746422B2 (en) * 2012-07-05 2017-08-29 Gemological Appraisal Association, Inc. Gemstone registration and recovery system, and systems for evaluating the light performance of a gemstone and capturing forensic characteristics of a gemstone
JP2014041927A (ja) * 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法
US9610653B2 (en) * 2012-09-21 2017-04-04 Electro Scientific Industries, Inc. Method and apparatus for separation of workpieces and articles produced thereby
KR102070087B1 (ko) * 2013-04-29 2020-01-30 삼성전자주식회사 반도체 소자 제조방법
US10005152B2 (en) * 2013-11-19 2018-06-26 Rofin-Sinar Technologies Llc Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
JPWO2015111134A1 (ja) * 2014-01-21 2017-03-23 創光科学株式会社 窒化物半導体発光素子
KR20170013358A (ko) * 2014-07-15 2017-02-06 오지 홀딩스 가부시키가이샤 광학 소자

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10323780A (ja) * 1997-05-26 1998-12-08 Hitachi Constr Mach Co Ltd レーザ加工方法及び装置
JP2003088975A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2011181909A (ja) * 2010-02-02 2011-09-15 Mitsubishi Chemicals Corp 半導体チップ製造方法
CN104508799A (zh) * 2012-08-22 2015-04-08 浜松光子学株式会社 加工对象物切断方法
CN104584195A (zh) * 2012-08-22 2015-04-29 浜松光子学株式会社 加工对象物切割方法
CN103785957A (zh) * 2012-10-29 2014-05-14 三星钻石工业股份有限公司 激光加工装置及具有图案的基板的加工条件设定方法
CN104827191A (zh) * 2015-05-12 2015-08-12 大族激光科技产业集团股份有限公司 蓝宝石的激光切割方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ309498B6 (cs) * 2018-03-14 2023-03-01 Disco Corporation Způsob výroby waferu a zařízení pro výrobu waferu

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