CN104827191A - 蓝宝石的激光切割方法 - Google Patents
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Abstract
本发明适用于激光加工领域,本发明提供了一种蓝宝石的激光切割方法,所述蓝宝石包括正面和带有电极的背面,所述背面上由相互交错的切割道,所述电极被切割道分离,所述激光切割方法包括:延任意一切割道中间位置进行加工;获取裂纹的方向和偏移量;根据裂纹的方向和偏移量调整激光加工位置;按照调整后的激光加工位置进行剩余的切割道进行加工。通过对任意一切割道的中心位置进行试切割,获得裂纹的方向和偏移量,然后再根据获取的裂纹方向和偏移量调整剩余切割道的激光加工位置,使得裂纹的位置靠近切割道的中心,不仅提高同一蓝宝石切割出单个芯片的数量,同时增大切割的良品率。
Description
技术领域
本发明属于激光加工领域,尤其涉及一种蓝宝石的激光切割方法。
背景技术
在LED晶圆片等半导体等激光微细精密加工行业中,所使用的蓝宝石衬底大多是大面为c面的晶圆片,如图1所示,在LED晶圆激光切割工艺中,需要将整片圆形的晶圆片分割成若干个矩形的单个芯粒。两个相互垂直的切割方向一般对应蓝宝石晶体的a面和m面,并且a面和m面都与c面垂直。由于m面靠近r面(解理面),并且r面与c面不垂直且有一定的斜角。激光切割后的单个成品芯粒在m面实际的裂开方向是r面,这样会造成CCD对位的激光加工点与实际晶圆片裂开的位置有一定的偏差,导致实际裂纹偏离的切割道中间,当切割道的宽度较大时,实际裂纹位置没有延伸到芯片发光电极区(电极)处,但在实际加工,需要尽可能的增加产量,使得切割道的宽度越来越小,由于裂纹偏离切割道中间位置,将会划伤芯片发光电极区,从而影响最终良品率。
发明内容
本发明实施例的目的在于提供一种蓝宝石的激光切割方法,以解决现有的激光切割产生的裂纹偏离切割道中间而划伤发光电机区的问题。
本发明实施例是这样实现的,一种蓝宝石的激光切割方法,所述蓝宝石包括正面和带有电极的背面,所述背面上由相互交错的切割道,所述电极被切割道分离,所述激光切割方法包括:
延任意一切割道中间位置点进行加工;
获取裂纹的方向和偏移量;
根据裂纹的方向和偏移量调整激光加工位置;
按照调整后的激光加工位置进行剩余的切割道进行加工。
进一步地,通过视觉系统获取裂纹的方向和偏移量。
进一步地,所述视觉系统包括ccd相机。
进一步地,所述视觉系统抓取延切割道中间位置点进行激光加工后的蓝宝石图形,并记录所述蓝宝石图形的灰度,所述裂纹的灰度将区别于整个蓝宝石图形的灰度。
所述根据裂纹的方向和偏移量调整激光加工位置的步骤,具体为,激光加工位置的调整方向为使得裂纹指向切割道中心的方向,调整的距离不大于切割道的宽度的一半。
本发明提供了一种蓝宝石的激光切割方法,通过对任意一切割道在其中心位置点进行试切割,获得裂纹的方向和偏移量,然后再根据获取的裂纹方向和偏移量调整剩余切割道的激光加工位置,使得调整后再加工的裂纹的位置靠近切割道的中心,不仅提高同一蓝宝石切割出单个芯片的数量,同时增大切割的良品率。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的蓝宝石结构示意图;
图2是本发明实施例提供的蓝宝石晶圆片切割方向示意图;
图3是现有技术提供的蓝宝石晶圆片延切割道中心位置的切割示意图;
图4是本发明实施例提供的蓝宝石的激光切割方法流程图;
图5是本发明实施例提供的蓝宝石晶圆片延切割道中心位置的切割示意图;
图6是本发明实施例提供的调整加工位置后的切割示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
如图1所示的蓝宝石晶体结构,在LED行业中的蓝宝石衬底为大面为c面的晶圆片,所述晶圆片切割的两个相互垂直的切割面是m面和a面,如图2所示,晶圆片的所需要的两个切割方向为m轴和a轴,分别垂直于m面和a面,其中平口边平行于m轴向,图2可以认为是图1在c面的投影。
由图1可知,m面靠近r面(解理面),由于蓝宝石晶体的r面本身特性,在对m面进行切割时,一般容易在r面优先裂开。所以,经过激光切割之后,m面实际裂开的方向是r面,这样加工后的样品r面和c面有一定的斜裂角度。
如图3所示,在LED晶圆激光切割行业,激光的加工方式是激光聚焦在蓝宝石衬底内部形成爆炸点,利用爆炸点形成的应力将蓝宝石裂开。蓝宝石衬底上生长了有周期性图形的电极1,电极的图形为矩形,并且由相互垂直的切割道2来分开。由于r面的斜裂性质,容易使实际的裂开位置不在切割道2中间,严重的情况下甚至会斜裂到电极1的图形区,产生不良品,降低切割的良率。
从a面的横截面来看r面的斜裂方向,激光光束3垂直入射到蓝宝石衬底内部形成爆炸点4,并且激光光束3的入射位置是对准了切割道2中间位置O点,但由于r面的存在,实际的裂纹5不在切割道2中间位置O点处,导致电极面大小边严重,影响加工良率。当切割道2的宽度小于30um,甚至更小时,裂纹5容易裂开到电极1上,产生不良品。
如图5,本发明实施例提供一种蓝宝石的激光切割方法,通过减小切割道20宽度,以增大同一晶圆片生产的单个芯片的产量,所述蓝宝石包括正面和带有电极10的背面,所述背面上由相互交错的切割道20,所述电极10被切割道20分离,所述激光切割方法包括:
S110,延任意一切割道20的中间位置O点进行加工;
在m面,首先使激光对准任意一切割道20的中间位置O点进行加工,如图5所示,激光光束30对准切割道20的中间位置O点垂直射向蓝宝石衬底,并且在蓝宝石内部形成爆炸点40,将产生实际裂纹50,所述裂纹50不在切割道20的中间位置O点。
S120,获取裂纹的方向和偏移量;
通过视觉系统观察、抓取实际裂纹50的图像,本实施例中,所述视觉系统采用ccd相机,由于有裂纹50的位置的灰度和其它位置的灰度会有明显的差异,利用灰度的特征对激光加工后的图像进行拍照,获取到裂纹50的实际偏移方向和偏移量。
S130,根据裂纹50的方向和偏移量调整激光加工位置;
调整激光30在所述晶圆片内部产生爆炸点40’的位置,激光加工位置的调整方向为使得裂纹指向切割道中心的方向,在本实施例中,如图5、6所示,由于需要将在切割道20的中间位置O点进行加工产生的裂纹50靠右偏移,所以,需要将激光加工位置向右调整,使得裂纹50’刚好位于切割道的中间位置O点。其中,向右调整的距离不大于切割道的宽度的一半。
进一步地,向右调整的距离等于裂纹50到切割道中间位置O点之间的距离。
S140,按照调整后的激光加工位置对剩余的切割道进行加工。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下做出若干等同替代或明显变型,而且性能或用途相同,都应当视为属于本发明由所提交的权利要求书确定的专利保护范围。
Claims (5)
1.一种蓝宝石的激光切割方法,所述蓝宝石包括正面和带有电极的背面,所述背面上由相互交错的切割道,所述电极被切割道分离,其特征在于,所述激光切割方法包括:
延任意一切割道中间位置点进行加工;
获取裂纹的方向和偏移量;
根据裂纹的方向和偏移量调整激光加工位置;
按照调整后的激光加工位置进行剩余的切割道进行加工。
2.如权利要求1所述的激光切割方法,其特征在于,通过视觉系统获取裂纹的方向和偏移量。
3.如权利要求2所述的激光切割方法,其特征在于,所述视觉系统包括ccd相机。
4.如权利要求3所述的激光切割方法,其特征在于,所述视觉系统抓取延切割道中间位置点进行激光加工后的蓝宝石图形,并记录所述蓝宝石图形的灰度,所述裂纹的灰度区别于整个蓝宝石图形的灰度。
5.如权利要求1所述的激光切割方法,其特征在于,所述根据裂纹的方向和偏移量调整激光加工位置的步骤,具体为,激光加工位置的调整方向为使得裂纹指向切割道中心的方向,调整的距离不大于切割道的宽度的一半。
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CN201510239300.XA CN104827191A (zh) | 2015-05-12 | 2015-05-12 | 蓝宝石的激光切割方法 |
US15/321,946 US10625375B2 (en) | 2015-05-12 | 2016-04-29 | Laser processing method, apparatus for sapphire and storage medium |
PCT/CN2016/080638 WO2016180246A1 (zh) | 2015-05-12 | 2016-04-29 | 蓝宝石的激光加工方法、设备和存储介质 |
JP2016569063A JP6371862B2 (ja) | 2015-05-12 | 2016-04-29 | サファイアのレーザー加工方法、設備及び記録媒体 |
MYPI2016703988A MY192764A (en) | 2015-05-12 | 2016-04-29 | Laser processing method, apparatus for sapphire and storage medium |
DE112016000051.0T DE112016000051T5 (de) | 2015-05-12 | 2016-04-29 | Laserbearbeitungsverfahren, Vorrichtung für Saphir und Speichermedium |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016180246A1 (zh) * | 2015-05-12 | 2016-11-17 | 大族激光科技产业集团股份有限公司 | 蓝宝石的激光加工方法、设备和存储介质 |
CN106256477A (zh) * | 2016-08-31 | 2016-12-28 | 安徽芯瑞达电子科技有限公司 | 暗部判断法激光切割方法 |
CN106449900A (zh) * | 2016-08-31 | 2017-02-22 | 导装光电科技(深圳)有限公司 | 用于led白光芯片的切割工艺和装置 |
CN111778561A (zh) * | 2020-06-22 | 2020-10-16 | 福建晶安光电有限公司 | 一种蓝宝石衬底、加工方法及发光二极管的制备方法 |
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US10625375B2 (en) | 2020-04-21 |
JP2017520405A (ja) | 2017-07-27 |
DE112016000051T5 (de) | 2017-02-16 |
MY192764A (en) | 2022-09-07 |
JP6371862B2 (ja) | 2018-08-08 |
US20170151632A1 (en) | 2017-06-01 |
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