WO2016152724A1 - ニオブ酸系強誘電体薄膜素子の製造方法 - Google Patents
ニオブ酸系強誘電体薄膜素子の製造方法 Download PDFInfo
- Publication number
- WO2016152724A1 WO2016152724A1 PCT/JP2016/058523 JP2016058523W WO2016152724A1 WO 2016152724 A1 WO2016152724 A1 WO 2016152724A1 JP 2016058523 W JP2016058523 W JP 2016058523W WO 2016152724 A1 WO2016152724 A1 WO 2016152724A1
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- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- ferroelectric thin
- acid
- etching
- niobic acid
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 191
- 239000002253 acid Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 214
- 239000010408 film Substances 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000002738 chelating agent Substances 0.000 claims abstract description 56
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000001039 wet etching Methods 0.000 claims abstract description 20
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 9
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 9
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims abstract description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 102
- 239000000243 solution Substances 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 69
- 230000008569 process Effects 0.000 claims description 39
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 34
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 25
- 150000003839 salts Chemical class 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 22
- 229940120146 EDTMP Drugs 0.000 claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 17
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 16
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 9
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 159000000000 sodium salts Chemical class 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910003002 lithium salt Inorganic materials 0.000 claims description 3
- 159000000002 lithium salts Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 15
- 239000012670 alkaline solution Substances 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract 1
- 229960004106 citric acid Drugs 0.000 description 32
- 238000001312 dry etching Methods 0.000 description 21
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- 239000000463 material Substances 0.000 description 19
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- 239000000126 substance Substances 0.000 description 15
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- -1 5Na) Chemical compound 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 9
- OXHDYFKENBXUEM-UHFFFAOYSA-N glyphosine Chemical compound OC(=O)CN(CP(O)(O)=O)CP(O)(O)=O OXHDYFKENBXUEM-UHFFFAOYSA-N 0.000 description 9
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- 238000002360 preparation method Methods 0.000 description 8
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- 238000011156 evaluation Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
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- 239000003153 chemical reaction reagent Substances 0.000 description 5
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- 238000011835 investigation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 4
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- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
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- 239000000383 hazardous chemical Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
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- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- OQUFOZNPBIIJTN-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;sodium Chemical compound [Na].OC(=O)CC(O)(C(O)=O)CC(O)=O OQUFOZNPBIIJTN-UHFFFAOYSA-N 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- KYQODXQIAJFKPH-UHFFFAOYSA-N diazanium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [NH4+].[NH4+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O KYQODXQIAJFKPH-UHFFFAOYSA-N 0.000 description 1
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- RDSDRBIJHLVNSE-UHFFFAOYSA-L dilithium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Li+].[Li+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O RDSDRBIJHLVNSE-UHFFFAOYSA-L 0.000 description 1
- KRGLZFVNTDZMFB-UHFFFAOYSA-L dilithium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate;hydrate Chemical compound [Li+].[Li+].O.OC(=O)CN(CC(O)=O)CCN(CC([O-])=O)CC([O-])=O KRGLZFVNTDZMFB-UHFFFAOYSA-L 0.000 description 1
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- OSBMVGFXROCQIZ-UHFFFAOYSA-I pentasodium;[bis(phosphonatomethyl)amino]methyl-hydroxyphosphinate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].OP([O-])(=O)CN(CP([O-])([O-])=O)CP([O-])([O-])=O OSBMVGFXROCQIZ-UHFFFAOYSA-I 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- RGZQGGVFIISIHZ-UHFFFAOYSA-N strontium titanium Chemical compound [Ti].[Sr] RGZQGGVFIISIHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MAPFUJCWRWFQIY-UHFFFAOYSA-K tripotassium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxymethyl)amino]acetate;dihydrate Chemical compound O.O.[K+].[K+].[K+].OC(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O MAPFUJCWRWFQIY-UHFFFAOYSA-K 0.000 description 1
- FXNQQEVEDZAAJM-UHFFFAOYSA-K trisodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxymethyl)amino]acetate;trihydrate Chemical compound O.O.O.[Na+].[Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O FXNQQEVEDZAAJM-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Definitions
- the present invention relates to a ferroelectric thin film element, and more particularly, to a method of manufacturing a thin film element including a lead-free niobic acid ferroelectric.
- Ferroelectrics are very attractive substances due to their unique properties (for example, extremely high relative dielectric constant, pyroelectricity, piezoelectricity, ferroelectricity, etc.). It is used as an element, a piezoelectric element, a ferroelectric memory, and the like.
- Typical examples include barium titanate (BaTiO 3 ) and lead zirconate titanate (Pb (Zr 1-x Ti x ) O 3 , abbreviated as PZT) having a perovskite structure.
- PZT lead zirconate titanate
- PZT is a specific hazardous substance containing lead, but currently there is no suitable commercial product that can be substituted for pyroelectric material / piezoelectric material, so the RoHS Directive (use of specific hazardous substances contained in electrical and electronic equipment) Exempt from the European Parliament and Council Directive on restrictions).
- the RoHS Directive use of specific hazardous substances contained in electrical and electronic equipment
- the European Parliament and Council Directive Exempt from the European Parliament and Council Directive on restrictions.
- the demand for global environmental conservation has been increasing worldwide, and the development of pyroelectric elements and piezoelectric elements using ferroelectrics that do not contain lead (lead-free ferroelectrics) is strongly desired.
- a piezoelectric element is an element that uses the piezoelectric effect of a ferroelectric substance, and is used for an actuator that generates displacement or vibration in response to voltage application to a ferroelectric substance (piezoelectric substance), or for stress deformation to a piezoelectric substance.
- a functional electronic component such as a stress sensor that generates a voltage.
- a pyroelectric element is an element that detects light including infrared rays by the pyroelectric effect of a ferroelectric substance, and is widely used as an infrared sensor for detecting a human body.
- the piezoelectric element has a basic structure in which a piezoelectric body is sandwiched between two electrodes, and is manufactured by microfabrication into a beam shape or a tuning fork shape according to the application. For this reason, the microfabrication process is one of the very important technologies when a piezoelectric element using a lead-free piezoelectric material is put into practical use.
- a piezoelectric thin film wafer having a piezoelectric thin film (composition formula: (K 1-x Na x ) NbO 3 , 0.4 ⁇ x ⁇ 0.7) on a substrate is used using a gas containing Ar.
- a method for manufacturing a piezoelectric thin film wafer is disclosed. According to Patent Document 2, a piezoelectric thin film can be finely processed with high accuracy, and a highly reliable piezoelectric thin film element and an inexpensive piezoelectric thin film device are obtained.
- Patent Document 3 discloses a step of forming a lower electrode on a substrate and a piezoelectric film having an alkali niobium oxide perovskite structure represented by a composition formula (K 1-x Na x ) NbO 3 on the lower electrode.
- a method for manufacturing a piezoelectric film element comprising a forming step and a step of performing wet etching on the piezoelectric film, and using the Cr film as a mask in the wet etching step.
- Patent Document 3 by using a hydrofluoric acid-based etching solution with a Cr film as a mask and wet etching the piezoelectric film layer, the processing can be selectively stopped in the lower electrode layer, and the piezoelectric film layer can be shortened. It is said that fine processing can be performed with accuracy in time.
- JP 2007-19302 A JP 2012-33693 A JP 2012-244090 A
- niobate-based ferroelectrics for example, potassium sodium niobate, (K 1-x Na x ) NbO 3
- K 1-x Na x ) NbO 3 potassium sodium niobate, (K 1-x Na x ) NbO 3
- Establishing a microfabrication process with high dimensional accuracy and low cost is very important for practical use and mass production of thin-film elements using niobate-based ferroelectrics as an alternative to PZT thin-film elements. is important.
- the wet etching technique described in Patent Document 3 has a relatively high throughput and is more advantageous for reducing the manufacturing cost than the dry etching process.
- niobic acid-based ferroelectrics are chemically stable materials, and until now it has been difficult to perform fine processing unless a hydrofluoric acid-based etching solution is used.
- Hydrofluoric acid-based etchants require strict safety measures in handling, and there are restrictions on the etching masks that can be used, so that the advantages of reducing manufacturing costs are greatly offset when considering mass production. there were.
- an object of the present invention is to solve the above-mentioned problems and to provide a manufacturing method capable of finely processing a thin film element using a niobic acid-based ferroelectric material containing no lead with high dimensional accuracy and at a lower cost than before. .
- One aspect of the present invention is a method of manufacturing a niobic acid ferroelectric thin film element, A lower electrode film forming step of forming a lower electrode film on the substrate; A ferroelectric thin film forming step of forming a niobic acid ferroelectric thin film on the lower electrode film; An etching mask pattern forming step for forming an etching mask on the niobic acid-based ferroelectric thin film so as to have a desired pattern; The niobate-based ferroelectric thin film is subjected to wet etching using an etchant containing a chelating agent, an alkaline aqueous solution, and a hydrogen peroxide solution (H 2 O 2 aq.).
- the alkaline aqueous solution includes an aqueous ammonia solution (NH 3 aq.),
- the present invention provides a method for manufacturing a niobic acid ferroelectric thin film element, wherein the etching mask is an amorphous fluororesin film laminated via a noble metal film.
- the present invention can be modified or changed as follows in the method for manufacturing a niobic acid ferroelectric thin film element according to the present invention.
- the manufacturing method includes an upper electrode forming step of forming an upper electrode on the niobic acid ferroelectric thin film, and a chip from the substrate including the niobic acid ferroelectric thin film on which the upper electrode is formed. And a dicing step of cutting out a niobic acid-based ferroelectric thin film element in a shape, and the upper electrode is the noble metal film.
- the chelating agent includes ethylenediaminetetraacetic acid (EDTA), ethylenediaminetetramethylenephosphonic acid (EDTMP), nitrilotris (methylenephosphonic acid) (NTMP), cyclohexanediaminetetraacetic acid (CyDTA), 1-hydroxyethane-1, At least selected from 1-diphosphonic acid (etidronic acid) (HEDP), glycine-N, N-bis (methylenephosphonic acid) (GBMP), diethylenetriaminepenta (methylenephosphonic acid) (DTPMP), citric acid, and salts thereof One.
- EDTA ethylenediaminetetraacetic acid
- ETMP ethylenediaminetetramethylenephosphonic acid
- NTMP nitrilotris (methylenephosphonic acid)
- CyDTA cyclohexanediaminetetraacetic acid
- 1-hydroxyethane-1 At least selected from 1-diphosphonic acid (etidronic acid)
- the molar concentration of the chelating agent in the etching solution is 0.001 M (mol / L) or more.
- the molar concentration of the chelating agent in the etching solution is 0.03 M or more and 1 M or less.
- the salt of the chelating agent is at least one selected from a sodium salt, a potassium salt, a lithium salt, and an ammonium salt.
- the noble metal film is a platinum (Pt) film through a titanium (Ti) layer, or a nickel (Ni) layer, a cobalt (Co) layer, a tungsten (W) layer, or a molybdenum (Mo) layer. It is a gold (Au) film through one.
- the temperature of the etching solution is 60 ° C. or higher and lower than 100 ° C.
- the niobate-based ferroelectric thin film is composed of potassium sodium niobate ((K 1-x Na x ) NbO 3, KNN) or lithium niobate (LiNbO 3, LN).
- the lower electrode film is a Pt film through a Ti layer.
- the niobic acid ferroelectric thin film is formed by sputtering so that the crystal system is pseudo cubic or tetragonal and the main surface is preferentially oriented in the (0 0 1) plane.
- the substrate is a silicon (Si) substrate having a thermal oxide film on the surface thereof.
- the present invention it becomes possible to finely process a niobic acid-based ferroelectric material containing no lead into a desired pattern by wet etching with high dimensional accuracy and lower cost than conventional ones. As a result, it is possible to provide a niobic acid ferroelectric thin film element that is finely processed into a desired pattern while reducing the manufacturing cost.
- FIG. 3 is an enlarged cross-sectional schematic diagram showing an outline of a manufacturing process of the niobic acid ferroelectric thin film element according to the present invention.
- 6 is a graph showing an example of the relationship between the etching rate and the solution temperature in the KNN thin film multilayer substrate of Example 1. It is a graph which shows the other example of the relationship between the etching rate in the KNN thin film multilayer substrate of Example 1, and solution temperature.
- 2 is an optical micrograph showing an example of fine processing results for the KNN thin film multilayer substrate of Example 1.
- FIG. 4 is an optical micrograph showing an example of fine processing results for the KNN thin film multilayer substrate of Example 2.
- FIG. It is the graph which showed the example of a relationship between the polarization value and applied voltage in the KNN thin film element produced by this invention, and the reference sample.
- the present inventors have proposed niobic acid-based ferroelectrics as lead-free ferroelectrics that can be expected to have the same pyroelectric and piezoelectric properties as lead zirconate titanate (Pb (Zr 1-x Ti x ) O 3 , PZT). Focusing on the body (potassium sodium niobate ((K 1-x Na x ) NbO 3 , KNN) and lithium niobate (LiNbO 3 , LN)), the inventors studied diligently on the wet etching method of the material.
- niobic acid ferroelectrics which had previously been difficult to finely process without using a hydrofluoric acid-based etchant, are dimensioned by using an etchant containing a chelating agent, an alkaline aqueous solution, and a hydrogen peroxide solution. It was found that wet etching can be performed with high accuracy. Furthermore, since it is not a hydrofluoric acid type etching liquid, it discovered that a resin film could be utilized as an etching mask.
- Chelating agents are considered to be less harmful to living organisms and the environment than hydrofluoric acid, and can greatly reduce manufacturing costs including etching equipment costs.
- a resin film can be used as an etching mask, the etching process (particularly, the etching mask formation process) can be simplified, and the process cost can be further reduced.
- the present invention has been completed based on these findings.
- FIG. 1 is an enlarged schematic cross-sectional view showing an outline of a manufacturing process of a niobic acid ferroelectric thin film element according to the present invention.
- washing step and the drying step are omitted, it is preferable that these steps are appropriately performed as necessary.
- the substrate 11 is prepared.
- the material of the substrate 11 is not particularly limited, and can be appropriately selected according to the use of the pyroelectric element or the piezoelectric element.
- silicon Si
- SOI Silicon on Insulator
- quartz glass gallium arsenide
- GaAs gallium nitride
- sapphire Al 2 O 3
- magnesium oxide MgO
- zinc oxide ZnO
- titanium Strontium acid SiTiO 3
- the substrate 11 is made of a conductive material, it is preferable to have an electrical insulating film (for example, an oxide film) on the surface thereof.
- an electrical insulating film for example, an oxide film
- a thermal oxidation process or a chemical vapor deposition (CVD) method can be suitably used.
- the lower electrode film 12 is formed on the substrate 11 (see FIG. 1A).
- the material of the lower electrode film 12 is not particularly limited, but it is preferable to use platinum (Pt) or an alloy containing Pt as a main component. Since Pt is inactive with respect to the etching solution used in the ferroelectric thin film etching process described later, it can function as an etching stopper.
- Pt platinum
- the lower electrode film 12 is preferably formed via an adhesion layer (for example, a titanium (Ti) layer having a thickness of 1 to 5 nm).
- the lower electrode film 12 preferably has an arithmetic average surface roughness Ra of 0.86 nm or less in order to sufficiently exhibit the pyroelectric characteristics and piezoelectric characteristics of the niobic acid ferroelectric thin film.
- a niobic acid ferroelectric thin film 13 is formed on the lower electrode film 12 (see FIG. 1A).
- KNN ((K 1 ⁇ x Na x ) NbO 3 , 0.4 ⁇ x ⁇ 0.7) is preferably used.
- the niobate-based ferroelectric thin film 13 to be formed has a KNN crystal system of pseudo-cubic or tetragonal crystal, and the main surface of the thin film is preferentially oriented to the (0 0 1) plane. It is preferable in terms of dielectric properties.
- the niobic acid-based ferroelectric thin film 13 is not particularly limited as long as a desired KNN thin film can be obtained.
- a sputtering method, an electron beam evaporation method, a pulse method using a sintered body target having a desired composition, or the like. Laser deposition can be suitably used. This is because these film formation methods are excellent in terms of film formation reproducibility, film formation speed, and running cost, and can control the orientation of the KNN crystal.
- KNN thin film is one or more of lithium (Li), tantalum (Ta), antimony (Sb), calcium (Ca), copper (Cu), barium (Ba), and Ti within a total range of 5 atomic% or less. May be included.
- LN LiNbO 3
- Others are the same as in the case of KNN.
- the upper electrode film 14 is formed on the niobic acid ferroelectric thin film 13 (see FIG. 1B).
- a noble metal such as Pt, palladium (Pd), rhodium (Rh), iridium (Ir), gold (Au) can be preferably used.
- a thickness and formation method of the upper electrode film 14 it is preferable to form a thickness of about 100 to 300 nm by sputtering, for example.
- the upper electrode film 14 is formed of an adhesion layer (for example, a Ti layer having a thickness of 2 to 5 nm or a thickness of 5 to 50 nm). And a nickel (Ni) layer, a cobalt (Co) layer, a tungsten (W) layer, or a molybdenum (Mo) layer).
- an adhesion layer for example, a Ti layer having a thickness of 2 to 5 nm or a thickness of 5 to 50 nm.
- a nickel (Ni) layer, a cobalt (Co) layer, a tungsten (W) layer, or a molybdenum (Mo) layer for example, a Ti layer having a thickness of 2 to 5 nm or a thickness of 5 to 50 nm.
- a nickel (Ni) layer, a cobalt (Co) layer, a tungsten (W) layer, or a molybdenum (Mo) layer for example, a Ti layer having a thickness
- an etching mask for wet etching described later is formed on the formed upper electrode film 14.
- an amorphous fluororesin serving as an etching mask film 15 is formed on the upper electrode film 14 (see FIG. 1B).
- a photoresist pattern 16 for patterning the etching mask film 15 is formed on the etching mask film 15 by a photolithography process (see FIG. 1C).
- the etching mask film 15 is etched along the photoresist pattern 16 to form an etching mask pattern 15 ′ having a desired pattern (see FIG. 1D).
- the upper electrode film 14 is etched into a pattern defined by the etching mask pattern 15 ′ and the photoresist pattern 16 to form the upper electrode 14 ′ (see FIG. 1D).
- the etching method of the upper electrode film 14 and a dry etching method or a wet etching method may be used.
- the photoresist pattern 16 is removed leaving the etching mask pattern 15 'and the upper electrode 14' (see FIG. 1E). Thereby, the ferroelectric thin film multilayer substrate 10 having a desired etching mask pattern can be obtained.
- etching process In this step, wet etching is performed on the niobic acid ferroelectric thin film 13, and fine processing is performed to a pattern defined by the etching mask pattern 15 ′ (see FIG. 1F).
- the etchant it is preferable to use an etchant that contains a chelating agent, an alkaline aqueous solution, and a hydrogen peroxide solution and does not contain hydrofluoric acid (HF aq.). As a result, the cost of safety measures required for the conventional hydrofluoric acid etching solution can be reduced.
- Chelating agents include ethylenediaminetetraacetic acid (EDTA), ethylenediaminetetramethylenephosphonic acid (EDTMP), nitrilotris (methylenephosphonic acid) (NTMP), cyclohexanediaminetetraacetic acid (CyDTA), 1-hydroxyethane-1,1-diphosphone Acid (etidronic acid) (HEDP), glycine-N, N-bis (methylenephosphonic acid) (GBMP), diethylenetriaminepenta (methylenephosphonic acid) (DTPMP), citric acid, and salts thereof (sodium salt, potassium salt, At least one selected from lithium salts and ammonium salts) can be preferably used.
- EDTA ethylenediaminetetraacetic acid
- ETMP ethylenediaminetetramethylenephosphonic acid
- CyDTA cyclohexanediaminetetraacetic acid
- salts of the above chelating agents include ethylenediaminetetraacetic acid / disodium salt (EDTA ⁇ 2Na), ethylenediaminetetraacetic acid ⁇ trisodium salt (EDTA ⁇ 3Na), ethylenediaminetetraacetic acid ⁇ tetrasodium salt (EDTA ⁇ 4Na), ethylenediamine Tetraacetic acid / dipotassium salt (EDTA / 2K), ethylenediaminetetraacetic acid / tripotassium salt (EDTA / 3K), ethylenediaminetetraacetic acid / dilithium salt (EDTA / 2Li), ethylenediaminetetraacetic acid / diammonium salt (EDTA / 2NH 4) ), Ethylenediaminetetramethylenephosphonic acid, pentasodium salt (EDTMP, 5Na), nitrilotris (methylenephosphonic acid), pentasodium salt
- the molar concentration of the chelating agent in the etching solution is 0.001 M (mol / L) or more and 0.5 M (mol) / L) or less, more preferably 0.003 to 0.3 M, and still more preferably 0.01 to 0.2 M.
- the molar concentration of the chelating agent is less than 0.001M, the etching reaction activity becomes insufficient, and when it exceeds 0.5M, the etching reaction activity decreases.
- the molar concentration of the chelating agent in the etching solution is preferably 0.03 to M (mol / L) to 1 to M (mol / L), preferably 0.05 to M to 0.7. M or less is more preferable, and 0.1 to 0.6 M is even more preferable.
- the molar concentration of the chelating agent is less than 0.03M, the etching reaction activity becomes insufficient, and when it exceeds 1M, the etching reaction activity decreases.
- an alkaline aqueous solution and a hydrogen peroxide solution H 2 O 2 aq.
- aqueous alkaline solution an aqueous ammonia solution (NH 3 aq.), An aqueous sodium hydroxide solution (NaOH aq.), Or an aqueous potassium hydroxide solution (KOH aq.) Can be used, but it is preferable to mainly contain an aqueous ammonia solution.
- the etching solution is preferably adjusted so that its hydrogen ion index (pH) is 7.5 or more and 12 or less, and more preferably 8 or more and 10 or less.
- pH hydrogen ion index
- the etching solution is preferably adjusted so that its hydrogen ion index (pH) is 7.5 or more and 12 or less, and more preferably 8 or more and 10 or less.
- the ammonia concentration is preferably, for example, 3 to M (mol / L) to 10 to M (mol / L).
- the pH can be adjusted by adding a strong acid (for example, hydrochloric acid) or a strong base (for example, sodium hydroxide or potassium hydroxide).
- the concentration of hydrogen peroxide is preferably 4 to M (mol / L) to 9 to M (mol / L), more preferably 5 to 8 M. If the hydrogen peroxide concentration is less than 4M, the etching reaction activity becomes insufficient, and if it exceeds 9M, it becomes difficult to adjust the etching solution.
- medical agent which comprises the said etching liquid a commercially available reagent can be used, respectively.
- the amount of the etching solution to be prepared is relatively large (for example, when the amount of the etching solution is 2L or more) It is preferable to prepare by a two-component mixing method in which a concentrated solution (chelating agent / ammonia concentrated solution) composed of aqueous ammonia is added and diluted and mixed. Since the chelating agent / ammonia concentrated solution has an advantage of excellent storage stability, it can be prepared in advance.
- a concentrated solution chelating agent / ammonia concentrated solution
- the required amount of etching solution can be prepared in a very short time immediately before the wet etching process, and the time required for the entire etching process can be greatly reduced. (As a result, the process cost can be further reduced).
- the etching temperature (temperature of the etching solution) the etching reaction can be activated by heating from room temperature. Specifically, 50 ° C or higher is preferable, 60 ° C or higher is more preferable, and 80 ° C or higher is even more preferable. However, from the viewpoint of ensuring the safety of the work environment, it is preferably less than 100 ° C.
- a chemically very stable peroxy chelate for example, Nb—H 2 O 2 -EDTA
- Nb—H 2 O 2 -EDTMP are considered to etch the niobic acid ferroelectric.
- the etching mask pattern 15 ' is removed (see FIG. 1 (g)).
- a dry etching method can be preferably used.
- the chip-like niobic acid ferroelectric thin film element 20 is cut out from the substrate having the niobic acid ferroelectric thin film pattern 13 'and the upper electrode 14' having a desired pattern (see FIG. 1 (h)). ).
- Reference numeral 11 ′ represents a chip-shaped substrate, and reference numeral 12 ′ represents a lower electrode.
- the ferroelectric thin film element 20 including the niobic acid type ferroelectric thin film finely processed into a desired pattern can be obtained.
- the control of the thickness of each layer is verified in advance.
- the film formation time was controlled based on the film speed.
- the thickness for calculating the deposition rate is measured by an X-ray reflectivity method using an X-ray diffractometer (Spectris Co., Ltd. (PANalytical Division), model: X'Pert PRO MRD). It was.
- a Ti layer having a thickness of 2.2 nm was formed on a Si substrate by RF magnetron sputtering as a lower electrode adhesion layer for improving adhesion between the substrate 11 and the lower electrode film 12.
- a Pt layer having a thickness of 205 nm was formed as a lower electrode film 12 on the Ti layer by RF magnetron sputtering (see FIG. 1A).
- the sputtering conditions for the lower electrode adhesion layer and the lower electrode film were a pure Ti target and a pure Pt target, a substrate temperature of 250 ° C., a discharge power of 200 ⁇ W, an Ar atmosphere, and a pressure of 2.5 ⁇ Pa.
- the surface roughness of the formed lower electrode film 12 was measured, and it was confirmed that the arithmetic average roughness Ra was 0.86 nm or less. Note that an RF sputtering apparatus (ULVAC, Inc., model: SH-350-T10) was used as the sputtering apparatus (the same applies hereinafter).
- a KNN thin film ((K 0.35 Na 0.65 ) NbO 3 ) having a thickness of 1.9 ⁇ m was formed on the lower electrode film 12 as a niobic acid-based ferroelectric thin film 13 by RF magnetron sputtering (FIG. 1A )reference).
- a Ti layer having a thickness of 2 nm is formed on the niobic acid-based ferroelectric thin film 13 with an RF magnetron.
- a film was formed by sputtering.
- a Pt layer having a thickness of 100 nm was formed as an upper electrode film 14 on the Ti layer by RF magnetron sputtering (see FIG. 1B).
- the sputtering conditions for the upper electrode adhesion layer and the upper electrode film were a pure Ti target and a pure Pt target, a substrate temperature of 250 ° C., a discharge power of 200 ⁇ W, an Ar atmosphere, a pressure of 2.5 Pa.
- an amorphous fluororesin (CTL-809M, manufactured by Asahi Glass Co., Ltd.) having a thickness of 950 nm was formed as an etching mask film 15 on the upper electrode film 14 formed above by coating, drying and baking.
- a photoresist (OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied, exposed, and developed on the etching mask film 15 to form a photoresist pattern 16 (see FIG. 1C).
- the etching mask film 15 is etched along the photoresist pattern 16 to form an etching mask pattern 15 ′ having a desired pattern (FIG. 1 (d)).
- Dry etching conditions were an antenna power of 300 W, an O 2 gas flow of 50 sccm, and a pressure of 2.7 Pa.
- the upper electrode film 14 is etched along the etching mask pattern 15 ′ and the photoresist pattern 16 by changing the etching conditions using the same dry etching apparatus (EIS-700, manufactured by Elionix Co., Ltd.), and the upper electrode 14 ′. Formed. Dry etching conditions were an antenna power of 800 W, a bias power of 100 W, an Ar gas flow of 30 sccm, and a pressure of 1.8 Pa. Thereafter, the photoresist pattern 16 is removed by acetone cleaning, and only the etching mask pattern 15 ′ is left on the upper electrode 14 ′, thereby completing the KNN thin film multilayer substrate of Example 1 (FIGS. 1D and 1E). )reference).
- an upper electrode adhesion layer for improving the adhesion between the niobic acid-based ferroelectric thin film 13 and the upper electrode film 14 a Ni layer having a thickness of 5 nm is formed on the niobic acid-based ferroelectric thin film 13 by RF magnetron sputtering. A film was formed. Subsequently, an Au layer having a thickness of 300 nm was formed as an upper electrode film 14 on the Ni layer by RF magnetron sputtering.
- the sputtering conditions for the upper electrode adhesion layer and the upper electrode film were a pure Ni target and a pure Au target, a substrate temperature of 250 ° C., a discharge power of 200 ⁇ W, an Ar atmosphere, and a pressure of 2.5 ⁇ Pa.
- a 950 nm thick amorphous fluororesin (manufactured by Asahi Glass Co., Ltd., CTL-809M) is applied, dried, and baked as an etching mask film 15 on the formed upper electrode film 14.
- a photoresist (OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied, exposed and developed on the etching mask film 15 to form a photoresist pattern 16.
- the etching mask film 15 was etched along the photoresist pattern 16 using a dry etching apparatus (EIS-700, manufactured by Elionix Co., Ltd.) to form an etching mask pattern 15 ′ having a desired pattern.
- the dry etching conditions were an antenna power of 300 W, an oxygen (O 2 ) gas flow of 50 sccm, and a pressure of 2.7 Pa.
- the upper electrode film 14 was wet etched along the etching mask pattern 15 'and the photoresist pattern 16 to form the upper electrode 14'. Thereafter, the photoresist pattern 16 was removed by washing with acetone, and only the etching mask pattern 15 'was left on the upper electrode 14', thereby completing the KNN thin film laminated substrate of Example 2.
- an upper electrode adhesion layer for improving the adhesion between the niobic acid-based ferroelectric thin film 13 and the upper electrode film 14 a 10-nm-thick W layer is deposited on the niobic acid-based ferroelectric thin film 13 by electron beam evaporation ( The film was formed at a substrate temperature of 100 ° C. Subsequently, an Au layer having a thickness of 300 nm was formed as an upper electrode film 14 on the W layer by electron beam evaporation (substrate temperature 100 ° C.).
- an electron beam evaporation apparatus an apparatus (model: EX-400-C08) manufactured by ULVAC, Inc. was used.
- Example 2 the KNN thin film multilayer substrate of Example 3 having the etching mask pattern 15 'on the upper electrode 14' was completed.
- a 950 nm-thick amorphous fluororesin (manufactured by Asahi Glass Co., Ltd., CTL-809M) is formed as an etching mask film 15 directly on the niobic acid ferroelectric thin film 13 by coating, drying, and baking. did. Thereafter, a photoresist (OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied, exposed and developed on the etching mask film 15 to form a photoresist pattern 16.
- a photoresist OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.
- the etching mask film 15 was etched along the photoresist pattern 16 using a dry etching apparatus (EIS-700, manufactured by Elionix Co., Ltd.) to form an etching mask pattern 15 ′ having a desired pattern.
- Dry etching conditions were an antenna power of 300 W, an O 2 gas flow of 50 sccm, and a pressure of 2.7 Pa.
- Comparative Example 1 is intended to perform the upper electrode forming step after the ferroelectric thin film etching step by switching the order of the upper electrode forming step and the etching mask forming step with respect to the embodiment. This is a comparative investigation of the stability of etching masks depending on the presence or absence of this.
- a KNN crystal having a perovskite structure originally belongs to a tetragonal system in which the c-axis length is longer than the a-axis length (that is, c / a> 1). In other words, when “c / a> 1”, it indicates that a more stable crystal structure is formed as a tetragonal crystal (that is, crystallinity is high).
- a ferroelectric material having a perovskite structure generally has a higher polarization value (higher gain in piezoelectricity and ferroelectricity) when an electric field is applied in the c-axis direction of a crystal with less initial strain. It is done.
- a thin film crystal formed on a substrate is easily distorted due to the influence of the substrate and the underlayer.
- a KNN thin film consisting mainly of tetragonal crystals meaning closer to the original tetragonal crystals
- pseudo-cubic with “c / a ⁇ 1” In some cases, a KNN thin film composed mainly of crystals (meaning cubic crystals rather than original tetragonal crystals) is mainly formed. Therefore, the crystal system of the KNN thin film formed as described above was evaluated by X-ray diffraction (XRD). As a result, it was confirmed that in Examples 1 to 3 and Comparative Example 1 described above, a substrate on which a KNN thin film composed of tetragonal crystals with “c / a ⁇ > 1” was mainly formed was produced.
- chelating agent As chemicals for the etching solution, chelating agent, ammonia water (NH 3 aq., Manufactured by Kanto Chemical Co., Inc., reagent grade, 29% content), hydrogen peroxide water (H 2 O 2 aq., Kanto Chemical Co., Ltd.) And various grades of etching solutions were prepared using the following:
- Ethylenediaminetetraacetic acid As a chelating agent, Ethylenediaminetetraacetic acid (EDTA, manufactured by Wako Pure Chemical Industries, Ltd., purity 99.5%), Ethylenediaminetetraacetic acid, disodium salt dihydrate (EDTA-2Na, manufactured by Dojindo Laboratories, Inc., purity 99.5% or more), Ethylenediaminetetraacetic acid trisodium salt trihydrate (EDTA 3Na, manufactured by Dojindo Laboratories, Inc., purity 98.0% or more), Ethylenediaminetetraacetic acid / tetrasodium salt tetrahydrate (EDTA / 4Na, manufactured by Dojindo Laboratories, Inc., purity 98.0% or more), Ethylenediaminetetraacetic acid dipotassium salt dihydrate (EDTA 2K, manufactured by Dojin Chemical Laboratory, purity 99.0% or more), Eth
- Ethylenediaminetetraacetic acid diammonium salt (EDTA 2NH 4 , manufactured by Dojin Chemical Laboratory, purity 99.0% or more), Ethylenediaminetetramethylenephosphonic acid (EDTMP, manufactured by Crest Co., Ltd., purity 90% or more), Ethylenediaminetetramethylenephosphonic acid pentasodium salt (EDTMP / 5Na, manufactured by Italmatch Japan KK, DAIQUEST (registered trademark) 2046), Nitrilotris (methylenephosphonic acid) (NTMP, manufactured by Tokyo Chemical Industry Co., Ltd., purity 50% or more), Nitrilotris (methylenephosphonic acid) pentasodium salt (NTMP 5Na, manufactured by Italmatch Japan, DAIQuest (registered trademark) 2006), Cyclohexanediamine tetraacetic acid monohydrate (CyDTA ⁇ H 2 O, manufactured by Kirest Co., Ltd.), 1-hydroxyethane-1
- etching rate The relationship between the etching rate and the etching temperature (etching solution temperature) was investigated.
- etching solution temperature As an etchant, an etchant obtained by mixing 0.1 M chelating agent, 3.5 M ammonia water, and 7.5 M hydrogen peroxide solution was used. The initial pH of the etching solution was 9.6 to 9.7. The etching solution temperature was 60 to 95 ° C.
- the etching mask pattern 15 ′ and the upper electrode 14 ′ were removed using a dry etching apparatus (EIS-700, manufactured by Elionix Co., Ltd.). Dry etching conditions were an antenna power of 300 W, an O 2 gas flow of 50 sccm, and a pressure of 2.7 Pa. Thereafter, the etching property (here, the average etching rate obtained by dividing the step of the KNN thin film by the etching time) was evaluated by measuring the step of the KNN thin film. The results are shown in FIGS.
- FIG. 2 is a graph showing an example of the relationship between the etching rate and the etchant temperature in the KNN thin film laminated substrate of Example 1
- FIG. 3 shows the etching rate and the etchant temperature in the KNN thin film laminated substrate of Example 1. It is a graph which shows the other example of this relationship.
- the etching solution temperature etching
- Table 1 is a table summarizing the relationship between the typical chelating agent (chelating agent concentration 0.1 ⁇ M, etching solution temperature 85 ° C. (about 85 ⁇ 1 ° C.)) and the etching rate in the KNN thin film laminated substrate of Example 1. . As can be seen from the results in Table 1, it was confirmed that a sufficiently high etching rate was obtained using any chelating agent.
- the etching mask pattern 15 'peeled off from the niobic acid ferroelectric thin film 13 in about 10 minutes regardless of which etching solution was used, and shape controllability was maintained. Etching could not be performed. From this, it was confirmed that in the ferroelectric thin film etching in the present invention, it is important to use an amorphous fluororesin film laminated through a noble metal film (for example, the upper electrode film 14) as an etching mask.
- a noble metal film for example, the upper electrode film 14
- the etching rate allowable from the viewpoint of mass productivity is briefly considered.
- the etching rate in the conventional dry etching process is a level of 10 to 40 nm / min.
- the process of the present invention is a wet etching process, and a much larger number of samples can be simultaneously etched than a dry etching process. For example, assuming that 10 times the number of sheets corresponding to one dry etching apparatus is simultaneously wet-etched, the manufacturing throughput is equivalent to 10 times the etching rate of the dry process. From this, even if the etching rate of the process of the present invention is equivalent to that of the dry etching process, it can be said that there is a sufficient effect from the viewpoint of mass productivity. From this point of view, if an etching rate of about 10 nm / min or more can be obtained, the manufacturing cost can be sufficiently reduced.
- the etching time of 30 to 60 minutes are estimated from the results of the previous etching rate experiment, and the 1.9 ⁇ m-thick KNN thin film is sufficiently removed by etching, so that the lower electrode film 12 ( Here, it is the length of time for which the Pt film) is exposed.
- the etching temperature and time conditions can be 95 ° C for 60 minutes.
- the KNN thin film having a thickness of 1.9 ⁇ m could not be sufficiently removed by etching (the etching rate was insufficient). It was confirmed that a sufficient etching rate can be obtained at a chelating agent concentration of 0.001 to 0.5 ⁇ M. However, the etching rate was clearly reduced at a chelating agent concentration of 0.7M.
- the etching rate is insufficient when the chelating agent concentration is 0.01 M, but a sufficient etching rate is obtained when the chelating agent concentration is 0.03 to 1 M. Was confirmed. However, the etching rate clearly decreased at a chelating agent concentration of 1.2 M.
- any combination of chelating agents used in the present invention for example, “EDTA 0.1 M + EDTA ⁇ 2Na 0.01 M”, “EDTMP 0.01 M + citric acid 0.1 M”, “NTMP 0.01 M + citric acid 0.1 M”, “HEDP 0.01”
- a sufficient etching rate (a rate at which a 1.9 ⁇ m-thick KNN thin film can be completely removed by etching for 30 to 60 minutes) was obtained at “M + citric acid 0.1 M”.
- FIG. 4 is an optical micrograph showing an example of fine processing results for the KNN thin film multilayer substrate of Example 1
- FIG. 5 is an optical micrograph showing an example of micro processing results for the KNN thin film multilayer substrate of Example 2.
- any of the KNN thin film laminated substrates could be processed very cleanly and accurately.
- the Pt film serving as the lower electrode was not etched or peeled off, and the lower electrode film 12 could be used as an etching stopper.
- the side etching amount was about 20 to 40% of the film thickness.
- a sample obtained by dicing a KNN thin film multilayer substrate that was not subjected to pattern formation by wet etching according to the present invention was prepared. This sample was not affected by the ferroelectric thin film etching process at all, and was prepared as a reference sample for the ferroelectric characteristics of the formed KNN thin film.
- FIG. 6 is a graph showing an example of the relationship between the polarization value and the applied voltage in the KNN thin film element fabricated in the present invention and the reference sample.
- the KNN thin film element of FIG. 6 is obtained by finely processing the KNN thin film multilayer substrate of Example 1 with an etching solution using EDTMP. As shown in FIG. 6, it can be said that the hysteresis loop of the polarization value of the KNN thin film element manufactured according to the present invention and the reference sample almost completely coincided with each other, and the polarization characteristics thereof are substantially unchanged.
- the difference between the KNN thin film element fabricated in the present invention and the reference sample was about 1%. This level of difference is within the range of individual sample differences or measurement errors, and can be said to be substantially unchanged. Further, in the leakage current density, the difference is within the range of individual sample difference or measurement error, and it can be said that there is substantially no change.
- the ferroelectric thin film etching process of the present invention can be finely processed without degrading the ferroelectric characteristics of the KNN thin film.
- an etchant composed of 0.4 M citric acid, 3.5 M ammonia water, and 7.5 M hydrogen peroxide solution was prepared by two methods (volume 2 L each).
- the time required for mixing was measured.
- the time required from the start of mixing and stirring the three reagents to the completion of dissolution of citric acid was about 30 minutes.
- the time required from the start of mixing and stirring of the two solutions to the homogeneous mixing was measured and found to be about 30 seconds.
- Etching experiments were conducted with an etching solution B ′ stored for one week after the preparation of the etching solution by a two-component mixing method and an etching solution B ′′ prepared just using a citric acid / ammonia concentrated solution stored for one week.
- the etching solution B ′ could not etch the KNN thin film, but the etching solution B ′′ showed the same etching performance as the etching solutions A and B. From this experiment, the etching solution itself was immediately before the wet etching process. It is preferable to prepare, but it was confirmed that the chelating agent / ammonia concentrated solution is excellent in storage stability.
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Abstract
Description
基板上に下部電極膜を形成する下部電極膜形成工程と、
前記下部電極膜上にニオブ酸系強誘電体薄膜を形成する強誘電体薄膜形成工程と、
前記ニオブ酸系強誘電体薄膜上にエッチングマスクを所望のパターンとなるように形成するエッチングマスクパターン形成工程と、
前記ニオブ酸系強誘電体薄膜に対してキレート剤とアルカリ水溶液と過酸化水素水(H2O2 aq.)とを含むエッチング液を用いたウェットエッチングを行うことによって、前記ニオブ酸系強誘電体薄膜に所望パターンの微細加工を行う強誘電体薄膜エッチング工程とを有し、
前記アルカリ水溶液はアンモニア水溶液(NH3 aq.)を含み、
前記エッチングマスクは貴金属膜を介して積層したアモルファスフッ素樹脂膜であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法を提供する。
(i)前記製造方法は、前記ニオブ酸系強誘電体薄膜上に上部電極を形成する上部電極形成工程と、前記上部電極が形成されたニオブ酸系強誘電体薄膜を具備する前記基板からチップ状のニオブ酸系強誘電体薄膜素子を切り出すダイシング工程とを更に有し、前記上部電極が前記貴金属膜である。
(ii)前記キレート剤は、エチレンジアミン四酢酸(EDTA)、エチレンジアミンテトラメチレンホスホン酸(EDTMP)、ニトリロトリス(メチレンホスホン酸)(NTMP)、シクロヘキサンジアミン四酢酸(CyDTA)、1-ヒドロキシエタン-1,1-ジホスホン酸(エチドロン酸)(HEDP)、グリシン-N,N-ビス(メチレンホスホン酸)(GBMP)、ジエチレントリアミンペンタ(メチレンホスホン酸)(DTPMP)、クエン酸、およびそれらの塩から選ばれる少なくとも一つである。
(iii)前記キレート剤として、EDTA、EDTMP、NTMP、CyDTA、HEDP、GBMP、DTPMP、またはそれらの塩を用いる場合、前記エッチング液中の該キレート剤のモル濃度は0.001 M(mol/L)以上0.5 M(mol/L)以下であり、前記キレート剤として、クエン酸またはクエン酸塩を用いる場合、前記エッチング液中の該キレート剤のモル濃度は0.03 M以上1 M以下である。
(iv)前記キレート剤の塩は、ナトリウム塩、カリウム塩、リチウム塩、およびアンモニウム塩から選ばれる少なくとも一つである。
(v)前記貴金属膜は、チタン(Ti)層を介した白金(Pt)膜、または、ニッケル(Ni)層、コバルト(Co)層、タングステン(W)層またはモリブデン(Mo)層のうちの一つを介した金(Au)膜である。
(vi)前記強誘電体薄膜エッチング工程は、前記エッチング液の温度が60℃以上100℃未満である。
(vii)前記ニオブ酸系強誘電体薄膜は、ニオブ酸カリウムナトリウム((K1-xNax)NbO3、KNN)またはニオブ酸リチウム(LiNbO3、LN)からなる。
(viii)前記下部電極膜は、Ti層を介したPt膜である。
(ix)前記ニオブ酸系強誘電体薄膜は、結晶系が擬立方晶または正方晶であり主表面が(0 0 1)面に優先配向するようにスパッタ法により形成される。
(x)前記基板は、その表面に熱酸化膜を有するシリコン(Si)基板である。
本工程では、基板11上に下部電極膜12を形成する(図1(a)参照)。下部電極膜12の材料は、特に限定されないが、白金(Pt)又はPtを主成分とする合金を用いることが好ましい。Ptは、後述する強誘電体薄膜エッチング工程で用いるエッチング液に対して不活性であるため、エッチングストッパとして機能することができる。下部電極膜12の厚さおよび形成方法に特段の限定は無く、例えば、100~300 nm程度の厚さをスパッタ法で成膜することが好ましい。
本工程では、下部電極膜12上にニオブ酸系強誘電体薄膜13を形成する(図1(a)参照)。ニオブ酸系強誘電体の材料としては、KNN((K1-xNax)NbO3、0.4≦ x ≦0.7)を用いることが好ましい。また、形成するニオブ酸系強誘電体薄膜13は、KNN結晶の結晶系が擬立方晶または正方晶であり、薄膜の主表面が(0 0 1)面に優先配向されているものが、強誘電体特性上好ましい。
本工程では、ニオブ酸系強誘電体薄膜13の上に上部電極膜14を成膜する(図1(b)参照)。上部電極膜14の材料としては、例えば、Pt、パラジウム(Pd)、ロジウム(Rh)、イリジウム(Ir)、金(Au)等の貴金属を好適に用いることができる。上部電極膜14の厚さおよび形成方法に特段の限定は無く、例えば、100~300 nm程度の厚さをスパッタ法で成膜することが好ましい。
本工程では、成膜した上部電極膜14上に、後述するウェットエッチングに対するエッチングマスクを形成する。まず、上部電極膜14上にエッチングマスク膜15となるアモルファスフッ素樹脂を成膜する(図1(b)参照)。次に、フォトリソグラフィプロセスにより、エッチングマスク膜15をパターニングするためのフォトレジストパターン16をエッチングマスク膜15上に形成する(図1(c)参照)。次に、フォトレジストパターン16に沿ってエッチングマスク膜15をエッチングし、所望のパターンを有するエッチングマスクパターン15’を形成する(図1(d)参照)。
本工程では、上部電極膜14に対して、エッチングマスクパターン15’およびフォトレジストパターン16によって規定されるパターンにエッチングを行い、上部電極14’を形成する(図1(d)参照)。上部電極膜14のエッチング方法に特段の限定は無く、ドライエッチング法を用いてもよいしウェットエッチング法を用いてもよい。
本工程では、ニオブ酸系強誘電体薄膜13に対してウェットエッチングを行い、エッチングマスクパターン15’によって規定されるパターンに微細加工を行う(図1(f)参照)。エッチング液としては、キレート剤とアルカリ水溶液と過酸化水素水とを含みフッ酸(HF aq.)を含まないエッチング液を用いることが好ましい。これにより、従来のフッ酸系エッチング液に対して必要とされてきた安全対策コストを低減することができる。
本工程では、所望のパターンを有するニオブ酸系強誘電体薄膜パターン13’および上部電極14’を具備する基板からチップ状のニオブ酸系強誘電体薄膜素子20を切り出す(図1(h)参照)。符号11’はチップ状基板を表し、符号12’は下部電極を表す。これにより、所望のパターンに微細加工されたニオブ酸系強誘電体薄膜を具備する強誘電体薄膜素子20を得ることができる。
[ニオブ酸カリウムナトリウム薄膜素子]
(実施例1のKNN薄膜積層基板の作製)
図1に示した製造工程に沿って、KNN薄膜積層基板を作製した。基板11としては、熱酸化膜付きSi基板((1 0 0)面方位の4インチウェハ、ウェハ厚さ0.525 mm、熱酸化膜厚さ200 nm)を用いた。
実施例1のKNN薄膜積層基板に対して上部電極膜14(それをパターニングした上部電極14’)の構成を変更した実施例2のKNN薄膜積層基板を作製した。なお、上部電極14’の形成に関わる工程以外は、実施例1と同様に行った。
実施例1のKNN薄膜積層基板に対して上部電極膜14(それをパターニングした上部電極14’)の構成を変更した実施例3のKNN薄膜積層基板を作製した。
実施例1のKNN薄膜積層基板に対して上部電極膜14を形成しなかった(ニオブ酸系強誘電体薄膜13の直上にエッチングマスク膜15を形成した)比較例1のKNN薄膜積層基板を作製した。上部電極膜14を形成しなかったこと以外は、実施例1と同様に行った。
ペロブスカイト構造を有するKNN結晶は、本来、c軸長がa軸長よりも長い(すなわちc/a > 1である)正方晶系に属する。言い換えると、「c/a > 1」の場合、正方晶としてより安定な結晶構造が形成されている(すなわち、結晶性が高い)ことを示す。また、ペロブスカイト構造を有する強誘電体は、一般的に、初期歪みが少ない結晶のc軸方向に電界を印加したときに、より大きい分極値(圧電性や強誘電性におけるより高い利得)が得られる。
上記のエッチングマスクパターン15’を残した実施例1~3および比較例1のKNN薄膜積層基板から小片(20 mm×20 mm)を切り出し、KNN薄膜に対して、種々のエッチング条件でウェットエッチングを行い、KNN薄膜パターンを形成した(図1(f)参照)。
エチレンジアミン四酢酸(EDTA、和光純薬工業株式会社製、純度99.5%)、
エチレンジアミン四酢酸・二ナトリウム塩二水和物(EDTA・2Na、株式会社同仁化学研究所製、純度99.5%以上)、
エチレンジアミン四酢酸・三ナトリウム塩三水和物(EDTA・3Na、株式会社同仁化学研究所製、純度98.0%以上)、
エチレンジアミン四酢酸・四ナトリウム塩四水和物(EDTA・4Na、株式会社同仁化学研究所製、純度98.0%以上)、
エチレンジアミン四酢酸・二カリウム塩二水和物(EDTA・2K、株式会社同仁化学研究所製、純度99.0%以上)、
エチレンジアミン四酢酸・三カリウム塩二水和物(EDTA・3K、株式会社同仁化学研究所製、純度99.0%以上)、
エチレンジアミン四酢酸・二リチウム塩水和物(EDTA・2Li、和光純薬工業株式会社製、CAS No. 14531-56-7)
エチレンジアミン四酢酸・二アンモニウム塩(EDTA・2NH4、株式会社同仁化学研究所製、純度99.0%以上)、
エチレンジアミンテトラメチレンホスホン酸(EDTMP、キレスト株式会社製、純度90%以上)、
エチレンジアミンテトラメチレンホスホン酸・五ナトリウム塩(EDTMP・5Na、イタルマッチジャパン株式会社製、デイクエスト(登録商標)2046)、
ニトリロトリス(メチレンホスホン酸)(NTMP、東京化成工業株式会社製、純度50%以上)、
ニトリロトリス(メチレンホスホン酸)・五ナトリウム塩(NTMP・5Na、イタルマッチジャパン株式会社製、デイクエスト(登録商標)2006)、
シクロヘキサンジアミン四酢酸・一水和物(CyDTA・H2O、キレスト株式会社製)、
1-ヒドロキシエタン-1,1-ジホスホン酸(エチドロン酸)(HEDP、キレスト株式会社製、純度60%以上)、
1-ヒドロキシエタン-1,1-ジホスホン酸(エチドロン酸)・三ナトリウム塩(HEDP・3Na、イタルマッチジャパン株式会社製、デイクエスト(登録商標)2015DN)、
1-ヒドロキシエタン-1,1-ジホスホン酸(エチドロン酸)・四ナトリウム塩(HEDP・4Na、イタルマッチジャパン株式会社製、デイクエスト(登録商標)2016)、
グリシン-N,N-ビス(メチレンホスホン酸)(GBMP、東京化成工業株式会社製、純度97%以上)、
ジエチレントリアミンペンタ(メチレンホスホン酸)(DTPMP、イタルマッチジャパン株式会社製、デイクエスト(登録商標)2060S)、
ジエチレントリアミンペンタ(メチレンホスホン酸)・七ナトリウム塩(DTPMP・7Na、イタルマッチジャパン株式会社製、デイクエスト(登録商標)2066)、
クエン酸(関東化学株式会社製、純度99%以上)、
クエン酸・一水和物(関東化学株式会社製、純度99.5%以上)、
クエン酸・二水素ナトリウム塩(関東化学株式会社製、純度99%以上)、
クエン酸・水素二ナトリウム塩水和物(関東化学株式会社製、純度98%以上)、
クエン酸・三ナトリウム塩二水和物(関東化学株式会社製、純度99%以上)、
クエン酸・二水素カリウム塩(関東化学株式会社製、純度98%以上)、
クエン酸・水素二カリウム塩(関東化学株式会社製、純度98%以上)、
クエン酸・三カリウム塩一水和物(関東化学株式会社製、純度99%以上)、
クエン酸・三リチウム塩四水和物(関東化学株式会社製、純度98%以上)、
クエン酸・二水素アンモニウム塩(関東化学株式会社製、純度95%以上)、
クエン酸・水素二アンモニウム塩(関東化学株式会社製、純度99%以上)、および
クエン酸・三アンモニウム塩(関東化学株式会社製、純度98%以上)を用いた。
エッチング速度とエッチング温度(エッチング液温度)との関係を調査した。エッチング液としては、0.1 Mのキレート剤と、3.5 Mのアンモニア水と、7.5 Mの過酸化水素水とを混合したエッチング液を用いた。エッチング液の初期pHは、9.6~9.7であった。エッチング液温度は、60~95℃とした。
エッチング液中のキレート剤濃度の影響について調査した。各種キレート剤濃度を0.0001~1.2 Mの範囲で変化させて、KNN薄膜のエッチング性を評価した。アンモニア水濃度と過酸化水素水濃度とは、先のエッチング液と同じ(それぞれ3.5 M、7.5 M)にした。また、エッチング液温度は85~95℃とし、エッチング時間は30~60分間とした。なお、85~95℃のエッチング液温度および30~60分間のエッチング時間は、先のエッチング速度実験の結果から推定すると、1.9μm厚さのKNN薄膜が十分にエッチング除去されて下部電極膜12(ここではPt膜)が露出する時間長さである。
エッチング液の水素イオン指数(pH)の影響について調査した。pHの調整は、アンモニア濃度と塩酸濃度と水酸化ナトリウム濃度との制御によって行った。エッチング液のその他の成分は、0.1 MのEDTMPと7.5 Mの過酸化水素水とした。その結果、pH範囲8~10でエッチング速度に対する影響が小さく、pHが7.5未満および12超になるとエッチング速度が明確に低下することが確認された。
エッチング液中の過酸化水素濃度の影響について調査した。エッチング液のその他の成分は、0.1 Mの EDTMPと3.5 Mのアンモニア水とした。その結果、4~9 Mの過酸化水素濃度でエッチング速度に対する影響が小さく、過酸化水素濃度が4 M未満になるとエッチング速度が明確に低下することが確認された。
一部の試料を用いて、KNN薄膜積層基板に対してパッドパターン(200μm角、200μm間隔)の微細加工(下部電極膜12が露出するまでエッチング)を行い、光学顕微鏡および走査型電子顕微鏡(SEM)による微細組織観察を行った。
前述のエッチング速度の評価実験とは別に、KNN薄膜に所望のパターン形成を行った後、ドライエッチング装置(株式会社エリオニクス製、EIS-700)を用いてエッチングマスクパターン15’のみを除去した試料(上部電極14’を残した試料)を用意した。ドライエッチング条件は、アンテナパワー300 W、O2ガスフロー50 sccm、圧力2.7 Paとした。次に、ダイシングを行いチップ状のKNN薄膜素子(実施例1~3のKNN薄膜素子)を作製した。
[ニオブ酸リチウム薄膜素子]
(LN基板の用意)
ここでは、実験の簡便化のため、ニオブ酸リチウム(LiNbO3、LN)の単結晶基板(10 mm×10 mm×0.5 mm)を用意した。先のKNN薄膜積層基板の場合と同様に、用意したLN単結晶基板の一方の表面上に上部電極膜14を介してエッチングマスク膜15とフォトレジストパターン16とを形成した。続いて、ドライエッチング装置(株式会社エリオニクス製、EIS-700)を用いて、エッチングマスクパターン15’の形成と上部電極14’の形成と行った。その後、アセトン洗浄によりフォトレジストパターン16を除去し、上部電極14’とエッチングマスクパターン15’とが片面に形成されたLN基板を作製した。
[エッチング液準備方法の検討]
強誘電体薄膜エッチング工程における作業効率の向上を目指して、エッチング液準備方法の検討を行った。エッチングする強誘電体薄膜としては、先の検討1と同じ実施例1のKNN薄膜積層基板を用いた。
エッチング液としては、0.4 Mのクエン酸と、3.5 Mのアンモニア水と、7.5 Mの過酸化水素水とからなるエッチング液を二種類の方法で調合した(それぞれ容積2 L)。ひとつは、当該三試薬を一遍に混合する三試薬混合方式によって調合した(エッチング液Aと称す)。もう一つは、過酸化水素水に対して、あらかじめ別途用意したクエン酸/アンモニア濃厚溶液(クエン酸1.43 M/アンモニア12.5 M)を添加混合する二液混合方式によって調合した(エッチング液Bと称す)。
Claims (11)
- ニオブ酸系強誘電体薄膜素子の製造方法であって、
基板上に下部電極膜を形成する下部電極膜形成工程と、
前記下部電極膜上にニオブ酸系強誘電体薄膜を形成する強誘電体薄膜形成工程と、
前記ニオブ酸系強誘電体薄膜上にエッチングマスクを所望のパターンとなるように形成するエッチングマスクパターン形成工程と、
前記ニオブ酸系強誘電体薄膜に対してキレート剤とアルカリ水溶液と過酸化水素水とを含むエッチング液を用いたウェットエッチングを行うことによって、前記ニオブ酸系強誘電体薄膜に所望パターンの微細加工を行う強誘電体薄膜エッチング工程とを有し、
前記アルカリ水溶液はアンモニア水溶液を含み、
前記エッチングマスクは貴金属膜を介して積層したアモルファスフッ素樹脂膜であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記ニオブ酸系強誘電体薄膜上に上部電極を形成する上部電極形成工程と、
前記上部電極が形成されたニオブ酸系強誘電体薄膜を具備する前記基板からチップ状のニオブ酸系強誘電体薄膜素子を切り出すダイシング工程とを更に有し、
前記上部電極が前記貴金属膜であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1又は請求項2に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記キレート剤は、エチレンジアミン四酢酸、エチレンジアミンテトラメチレンホスホン酸、ニトリロトリス(メチレンホスホン酸)、シクロヘキサンジアミン四酢酸、1-ヒドロキシエタン-1,1-ジホスホン酸(エチドロン酸)、グリシン-N,N-ビス(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、クエン酸、およびそれらの塩から選ばれる少なくとも一つであることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項3に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記キレート剤として、エチレンジアミン四酢酸、エチレンジアミンテトラメチレンホスホン酸、ニトリロトリス(メチレンホスホン酸)、シクロヘキサンジアミン四酢酸、1-ヒドロキシエタン-1,1-ジホスホン酸(エチドロン酸)、グリシン-N,N-ビス(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、またはそれらの塩を用いる場合、前記エッチング液中の該キレート剤のモル濃度は0.001 M以上0.5 M以下であり、
前記キレート剤として、クエン酸またはクエン酸塩を用いる場合、前記エッチング液中の該キレート剤のモル濃度は0.03 M以上1 M以下であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項3又は請求項4に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記キレート剤の塩は、ナトリウム塩、カリウム塩、リチウム塩、およびアンモニウム塩から選ばれる少なくとも一つであることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1乃至請求項5のいずれか一項に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記貴金属膜は、チタン層を介した白金膜、または、ニッケル層、コバルト層、タングステン層およびモリブデン層のうちの一つを介した金膜であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1乃至請求項6のいずれか一項に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記強誘電体薄膜エッチング工程は、前記エッチング液の温度が60℃以上100℃未満であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1乃至請求項7のいずれか一項に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記ニオブ酸系強誘電体薄膜は、ニオブ酸カリウムナトリウムまたはニオブ酸リチウムからなることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1乃至請求項8のいずれか一項に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記下部電極膜は、チタン層を介した白金膜であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1乃至請求項9のいずれか一項に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記ニオブ酸系強誘電体薄膜は、結晶系が擬立方晶または正方晶であり主表面が(0 0 1)面に優先配向するようにスパッタ法により形成されることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。 - 請求項1乃至請求項10のいずれか一項に記載のニオブ酸系強誘電体薄膜素子の製造方法において、
前記基板は、その表面に熱酸化膜を有するシリコン基板であることを特徴とするニオブ酸系強誘電体薄膜素子の製造方法。
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JP6703979B2 (ja) | 2020-06-03 |
US20180108530A1 (en) | 2018-04-19 |
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