WO2016125795A1 - 感光性樹脂組成物、樹脂膜の製造方法、有機半導体素子の製造方法および含フッ素重合体 - Google Patents
感光性樹脂組成物、樹脂膜の製造方法、有機半導体素子の製造方法および含フッ素重合体 Download PDFInfo
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- WO2016125795A1 WO2016125795A1 PCT/JP2016/053070 JP2016053070W WO2016125795A1 WO 2016125795 A1 WO2016125795 A1 WO 2016125795A1 JP 2016053070 W JP2016053070 W JP 2016053070W WO 2016125795 A1 WO2016125795 A1 WO 2016125795A1
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- WIPO (PCT)
- Prior art keywords
- group
- fluorine
- resin composition
- photosensitive resin
- fluororesin
- Prior art date
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Images
Classifications
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- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
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- C—CHEMISTRY; METALLURGY
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
- C08F290/12—Polymers provided for in subclasses C08C or C08F
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
Definitions
- the present invention relates to a photosensitive resin composition, a method for producing a resin film, a method for producing an organic semiconductor element, and a fluoropolymer.
- a contact hole or the like may be formed in the insulating film by photolithography.
- a method for forming an insulating film having a contact hole or the like for example, a photosensitive resin composition containing a crosslinkable fluororesin, a crosslinking agent, a photoinitiator, and a solvent is applied on the source electrode, the drain electrode, and the organic semiconductor layer.
- an insulating film having contact holes and the like is formed by photolithography after coating on the substrate and removing the solvent.
- Examples of the photosensitive resin composition for forming an insulating film include a photosensitive resin containing a fluorine resin having a hydroxyl group, a compound having a cyclic ether structure (such as an oxetane ring structure), a photocationic polymerization initiator, and a fluorine-containing solvent. Resin compositions have been proposed (Examples of Patent Document 1).
- the fluorine atom content of the crosslinkable fluororesin is low.
- the fluorine atom content of the fluororesin having a hydroxyl group used in Examples of Patent Document 1 is about 25% by mass. Therefore, it is substantially essential to use an aromatic fluorine-containing solvent having high solubility in a fluorine resin having a low fluorine atom content as the fluorine-containing solvent.
- aromatic fluorine-containing solvents have high solubility in organic compounds that do not contain fluorine. Therefore, when the photosensitive resin composition of Patent Document 1 is applied on the organic semiconductor, the organic semiconductor layer may be damaged by the aromatic fluorine-containing solvent, and the characteristics of the organic semiconductor element may be deteriorated. (For example, carrier mobility decreases).
- the present invention relates to a photosensitive resin composition containing a crosslinkable fluororesin that hardly damages a substrate such as an organic semiconductor when forming a resin film; a resin film that hardly damages a substrate such as an organic semiconductor layer Manufacturing method; Method of manufacturing an organic semiconductor element that hardly damages the organic semiconductor layer when forming an insulating film from the photosensitive resin composition; Highly soluble in non-aromatic fluorine-containing solvent, having a crosslinkable group A fluoropolymer; and a process for producing the fluoropolymer.
- the present invention is a photosensitive resin composition having the following configurations [1] to [12], a method for producing a resin film, a method for producing an organic semiconductor element, a fluoropolymer, and a method for producing the same.
- a photosensitive resin composition comprising the following fluororesin (A), the following crosslinking agent (B), a photoinitiator, and the following solvent (D).
- Fluororesin (A) Fluororesin having a polymerizable carbon-carbon double bond and a fluorine atom content of 47% by mass or more.
- Solvent (D) A solvent composed of a fluorine-containing compound having no aromatic ring and liquid at 25 ° C.
- the solvent (D) is a fluorinated aliphatic hydrocarbon compound, a fluorinated alkylamine compound, a fluorinated alcohol compound, a fluorinated aliphatic ether compound or a fluorinated cyclic ether compound.
- the photosensitive resin composition in any one of. [7] The photosensitive resin composition according to any one of [1] to [6], wherein the solvent (D) has a boiling point of 80 ° C. or higher. [8] The photosensitive resin composition according to any one of [1] to [7], which is an insulating film forming composition for forming an insulating film on an organic semiconductor layer.
- the photosensitive resin composition according to any one of [1] to [8] is applied on a substrate, the solvent (D) is removed to form a film, and then exposed.
- a method for producing a resin film. includes applying the photosensitive resin composition according to any one of [1] to [8] on the organic semiconductor layer, removing the solvent (D), and then exposing to form an insulating film.
- the manufacturing method of the organic-semiconductor element characterized by the above-mentioned.
- R 1 and R 2 are each independently a hydrogen atom, a methyl group, an ethyl group or a halogen atom
- X 11 , X 12 , X 21 and X 22 are each independently a hydrogen atom or a halogen atom
- Q 1 and Q 2 are each independently a divalent linking group
- R f1 is a C 1-10 perfluoroalkyl group or a C 2-10 perfluoroalkyl group having an etheric oxygen atom between carbon-carbon atoms
- R f2 is a C 1-10 perfluoroalkylene group or a C 2-10 perfluoroalkylene group having an etheric oxygen atom between carbon-carbon atoms
- Z 1 is a monovalent organic group having a polymerizable
- R 22 is an alkylene group having 1 to 6 carbon atoms.
- the photosensitive resin composition of the present invention is a photosensitive resin composition that hardly damages a substrate such as an organic semiconductor when a resin film is formed. According to the method for producing a resin film of the present invention, it is difficult to damage a substrate such as an organic semiconductor when the resin film is formed. According to the method for producing an organic semiconductor element of the present invention, it is difficult to damage the organic semiconductor layer when forming the insulating film.
- the crosslinkable fluororesin of the present invention has high solubility in non-aromatic fluorine-containing solvents.
- the meanings of the following terms in this specification are as follows.
- the “undried coating film” means a film formed by applying a photosensitive resin composition containing a solvent before removing the solvent.
- the “dried coating film” means a film obtained by removing the solvent from the undried coating film.
- the “cured film” means a film obtained by curing a dry coating film.
- the cured film is also referred to as a resin film. “Having insulation” means that the volume resistivity measured by the double ring electrode method is 10 10 ⁇ ⁇ cm or more.
- the “unit” means a part derived from a monomer that exists in the polymer and constitutes the polymer. Moreover, what unitally converted the structure of a unit after polymer formation is also called a unit.
- the “perfluoroalkyl group” means a group in which all hydrogen atoms of an alkyl group are substituted with fluorine atoms.
- the “perfluoroalkylene group” means a group in which all of the hydrogen atoms of the alkylene group are substituted with fluorine atoms.
- the “(meth) acryloyl group” is a general term for an acryloyl group and a methacryloyl group.
- “(Meth) acrylate” is a general term for acrylate and methacrylate.
- the “relative dielectric constant” is a value measured at a frequency of 1 MHz in accordance with ASTM D150.
- Volume resistivity is a value measured by ASTM D257.
- Dielectric breakdown voltage is a value measured by a mercury flow bar (product name: SSM-495, manufactured by SSM).
- the unit represented by the formula (u1) is also referred to as “unit (u1)”.
- the group represented by the formula (g11) is also referred to as “group (g11)”.
- group (g11) The same applies to groups represented by other formulas.
- the compound represented by the formula (m1) is also referred to as “compound (m1)”.
- the compound represented by the formula (m1) is a monomer, it is also referred to as “monomer (m1)”.
- monomer (m1) is also referred to as “monomer (m1)”.
- the photosensitive resin composition of this invention contains a fluororesin (A), a crosslinking agent (B), a photoinitiator, and a solvent (D).
- the fluororesin (A) is a fluororesin having a polymerizable carbon-carbon double bond and a fluorine atom content of 47% by mass or more.
- the fluororesin (A) is crosslinkable because it has a polymerizable carbon-carbon double bond, and can be crosslinked and cured together with the crosslinking agent (B).
- the “polymerizable carbon-carbon double bond” is also simply referred to as “double bond” unless it is specifically referred to as another double bond. Since the fluororesin (A) has fluorine atoms, the dielectric constant and dielectric loss of the formed resin film are likely to be low.
- the dielectric constant and dielectric loss of the resin film are low, a delay in signal propagation speed can be suppressed between the multilayer wirings of the organic semiconductor element having the resin film as an insulating film, and an organic semiconductor element having excellent electrical characteristics can be obtained.
- Having fluorine atoms is also preferable in that the water absorption rate of the resin film is lowered.
- the low water absorption rate of the resin film means that it is possible to suppress changes in the bonding state of the electrode bonded to the insulating film made of the resin film and the surrounding wiring part, or to suppress metal alteration (such as rust) It improves the reliability of organic semiconductor elements.
- the double bond in the fluororesin (A) can react with the double bond in the crosslinking agent (B) by a radical generated from the photoinitiator to form a crosslinked structure.
- the double bond in the fluororesin (A) is preferably present as part of the pendant group of the fluororesin (A) from the viewpoint of easily forming a crosslinked structure.
- Examples of the group having a double bond include (meth) acryloyl group, vinyl group, allyl group, isopropenyl group, 3-butenyl group, trifluorovinyl group and the like. From the point that a cured film having high reactivity and high crosslink density is easily obtained, at least one selected from the group consisting of (meth) acryloyl group, vinyl group and allyl group is preferable, and (meth) acryloyl group is more preferable. An acryloyl group is particularly preferred.
- the fluorine atom content of the fluororesin (A) is 47% by mass or more, preferably 50% by mass or more, and particularly preferably 51% by mass or more. If a fluorine atom content rate is more than the lower limit of the said range, it will be excellent in the solubility of the fluororesin (A) to a solvent (D). Moreover, it is excellent in the low dielectric constant and low dielectric loss of a fluororesin (A). In addition, although the upper limit of fluorine atom content rate is not specifically limited, 75 mass% or less is preferable and 70 mass% or less is especially preferable.
- the mass average molecular weight (Mw) of the fluororesin (A) is preferably 10,000 to 1,000,000, more preferably 10,000 to 300,000, and particularly preferably 11,000 to 300,000.
- the number average molecular weight (Mn) of the fluororesin (A) is preferably from 5,500 to 500,000, particularly preferably from 5,500 to 150,000. If the mass average molecular weight and number average molecular weight of a fluororesin (A) are more than the lower limit of the said range, it will be excellent in film forming property. If the mass average molecular weight of a fluororesin (A) is below the upper limit of the said range, it will be further excellent in the solubility of the fluororesin (A) to a solvent (D).
- the relative dielectric constant of the fluororesin (A) is preferably 4.5 or less, particularly preferably 3.5 or less. If the relative dielectric constant of the fluororesin (A) is not more than the upper limit of the above range, signal delay between multilayer wirings can be prevented.
- the volume resistivity of the fluororesin (A) is preferably at least 10 10 ⁇ ⁇ cm, particularly preferably at least 10 12 ⁇ ⁇ cm. If the volume resistivity of the fluororesin (A) is not less than the lower limit of the above range, excellent insulating properties are exhibited.
- the dielectric breakdown voltage of the fluororesin (A) is preferably 1 kV / mm or more, particularly preferably 5 kV / mm or more.
- the dielectric breakdown voltage of the fluororesin (A) is not less than the lower limit of the above range, dielectric breakdown due to high voltage can be prevented.
- a fluororesin composed of a polymer obtained by introducing a group having a double bond into the polymer is preferred. Since a polymer obtained by addition polymerization of a monomer having a double bond usually does not have a double bond, a group having a double bond is introduced into the obtained polymer to introduce a double bond having a double bond. Combine.
- a polymer having a double bond using a monomer having a double bond can be obtained.
- a polymer having a double bond can be obtained by condensation polymerization using a polycondensation monomer having a double bond. It is also possible to introduce a group having a double bond into a condensation polymer having no double bond obtained from a condensation polymerizable monomer having no double bond to obtain a condensation polymer having a double bond. it can.
- the fluorine-containing polymer examples include a fluorine-containing (meth) acrylate polymer, a fluorine-containing vinyl polymer, a polymer having a fluorine-containing aliphatic ring structure in the main chain, a fluorine-containing polyarylene prepolymer, and a fluorine-containing polymer.
- a phenol resin oligomer, a fluorine-containing polyimide, etc. are mentioned.
- the fluororesin (A) is preferably a fluoropolymer having a double bond obtained by introducing a group having a double bond into a fluoropolymer having no double bond. From the viewpoint of high solubility in the solvent (D), a fluorine-containing polymer obtained by introducing a group having a double bond into a fluorine-containing (meth) acrylate polymer or a fluorine-containing vinyl polymer is preferable.
- the fluororesin comprising the fluoropolymer (A1) or the fluororesin comprising the fluoropolymer (A2) is more preferred, and the fluorine comprising the fluoropolymer (A1) is preferred from the viewpoint of excellent surface smoothness of the resin film. Resins are particularly preferred.
- the fluoropolymer (A1) is a copolymer having units (u1) and units (u21) represented by the following formula.
- R 1 and R 2 are each independently a hydrogen atom, a methyl group, an ethyl group or a halogen atom. From the viewpoint of easy availability of raw materials, a hydrogen atom or a methyl group is preferable, and a methyl group is particularly preferable from the viewpoint that the glass transition temperature of the fluoropolymer (A1) can be increased.
- X 11 , X 12 , X 21 and X 22 are each independently a hydrogen atom or a halogen atom. From the viewpoint of excellent reactivity, a hydrogen atom is preferable.
- the divalent linking group is preferably a linking group composed of various divalent bonds having an oxygen atom, a nitrogen atom, or the like, or a linking group in which such various bonds are linked to a divalent hydrocarbon group.
- Examples of the divalent bond having an oxygen atom or a nitrogen atom include an ether bond (—O—), an ester bond (—C (O) O—), an amide bond (—NHC (O) —), and a urethane bond. (—NHC (O) O—), urea bond (—NHC (O) NH—) and the like can be mentioned.
- the divalent hydrocarbon group linked to these bonds include an alkylene group, a cycloalkylene group, and an arylene group, and an alkylene group is particularly preferable.
- Q 1 examples include the following groups (g21) to (g24). -C (O) O-R 11 - ⁇ (g21), —C (O) O—R 10 —NHC (O) O—R 11 ⁇ (g22), —C (O) O—R 10 —CH (OH) CH 2 O—R 11 ⁇ (g23), —CH 2 —O—R 11 ⁇ (g24).
- R 10 and R 11 are each independently an alkylene group having 1 to 6 carbon atoms. The left side of these groups is bonded to the main chain of the copolymer, and the right side is bonded to R f1 .
- Q 2 examples include the following groups (g31) to (g34). -C (O) O-R 21 - ⁇ (g31), —C (O) O—R 20 —NHC (O) O—R 21 ⁇ (g32), —C (O) O—R 20 —CH (OH) CH 2 O—R 21 ⁇ (g33), —CH 2 —O—R 21 ⁇ (g34).
- R 20 and R 21 are each independently an alkylene group having 1 to 6 carbon atoms.
- the left side of these groups is bonded to the main chain of the copolymer, and the right side is bonded to Rf2 .
- Q 1 and Q 2 include the following groups. -C (O) O-CH 2- , -C (O) O-CH 2 CH 2- , —C (O) O—CH 2 CH 2 —NHC (O) O—CH 2 —, —C (O) O—CH 2 CH 2 —NHC (O) O—CH 2 CH 2 —, —CH 2 —O—CH 2 —, —CH 2 —O—CH 2 —CH 2 —.
- the left side of these groups is bonded to the main chain of the copolymer, and the right side is bonded to R f1 or R f2 .
- R f1 is a C 1-10 perfluoroalkyl group or a C 2-10 perfluoroalkyl group having an etheric oxygen atom between carbon-carbon atoms.
- the perfluoroalkyl group may be linear, branched, or cyclic.
- R f1 include the following groups. -CF 2 CF 2 CF 2 CF 3 , -CF 2 CF 2 CF 2 CF 2 CF 3 , -CF 2 CF 2 CF 2 CF (CF 3 ) CF 3 , -CF (CF 3 ) OCF 2 CF 2 CF 3 , -CF 2 OCF 2 CF 2 OCF 3 , -CF 2 OCF 2 CF 2 OCF 2 CF 3 , Perfluoroadamantyl group.
- R f2 is a C 1-10 perfluoroalkylene group, or a C 2-10 perfluoroalkylene group having an etheric oxygen atom between carbon-carbon atoms.
- the perfluoroalkylene group may be linear, branched, or cyclic.
- R f2 include the following groups. -CF 2 CF 2- , -CF 2 CF 2 CF 2- , -CF 2 CF 2 CF 2- , -CF 2 CF 2 CF 2 CF 2- , -CF 2 CF 2 CF 2 CF 2 CF 2- , -CF 2 CF 2 CF 2 CF 2 CF 2- , -CF 2 OCF 2 CF 2 OCF 2- , —CF 2 OCF 2 CF 2 OCF 2 CF 2 OCF 2 —.
- Z 1 is a monovalent organic group having a double bond.
- Z 1 may have two or more double bonds, but preferably has one double bond.
- the bond terminal of Z 1 (terminal bonded to R f2 ) is preferably a carbon atom, and the carbon atom at the bond terminal is preferably a carbon atom of a polyvalent hydrocarbon group.
- the polyvalent hydrocarbon group is preferably a divalent hydrocarbon group, and examples of the divalent hydrocarbon group include an alkylene group, a cycloalkylene group, and an arylene group.
- the hydrocarbon group and the double bond are bonded by various bonds having an oxygen atom, a nitrogen atom, etc., and various bonds include an ether bond (—O—), an ester bond (—C (O) O—), an amide bond ( -NHC (O)-), urethane bond (-NHC (O) O-), urea bond (-NHC (O) NH-) and the like.
- Z 1 is preferably a monovalent organic group in which an alkylene group having 1 to 6 carbon atoms is bonded to the above-described bond and double bond, and is particularly preferably an acryloyloxyalkyl group or a hydroxyalkyl group with an isocyanato group. It is preferably a group formed by combining a nate alkyl acrylate.
- Z 1 examples include the following groups (g41) to (g44). —R 22 —OC (O) —CR 23 ⁇ CH 2 (g41), —R 22 —OC (O) NH—R 24 —OC (O) —CR 23 ⁇ CH 2 (g42), —R 22 —O—CH 2 —CH ⁇ CH 2 (g43), —R 22 —O—CH ⁇ CH 2 (g44).
- R 22 and R 24 are each independently an alkylene group having 1 to 6 carbon atoms
- R 23 is a hydrogen atom or a methyl group.
- Z 1 include the following groups. —CH 2 —OC (O) —CH ⁇ CH 2 , —CH 2 —OC (O) —C (CH 3 ) ⁇ CH 2 , —CH 2 —OC (O) NH—CH 2 CH 2 —OC (O) —CH ⁇ CH 2 , —CH 2 —OC (O) NH—CH 2 CH 2 —OC (O) —C (CH 3 ) ⁇ CH 2 , —CH 2 —O—CH 2 —CH ⁇ CH 2 , —CH 2 —O—CH ⁇ CH 2 .
- the fluorinated polymer (A1) may have units other than the unit (u1) and the unit (u21) within a range not impairing the effects of the present invention.
- units other than the unit (u1) and the unit (u21) include a unit derived from the monomer (m3) described later, an unreacted unit (u41) described later, and the like.
- the ratio of each unit in the fluoropolymer (A1) is not particularly limited. From the viewpoint of the balance between the solubility of the fluorinated polymer (A1) in the solvent (D) and the reactivity with the crosslinking agent (B), all units (100 mol%) constituting the fluorinated polymer (A1)
- the proportion of the unit (u1) is preferably 60 to 95 mol%, particularly preferably 70 to 90 mol%, and the proportion of the unit (u21) is preferably 5 to 40 mol%, particularly preferably 10 to 30 mol%. .
- the fluoropolymer (A1) can be produced, for example, by a method having the following step (i) and step (ii).
- a method having the following step (i) and step (ii). In the presence of a polymerization initiator, the monomer (m1) and the monomer (m2) represented by the following formula are polymerized, and if necessary, monomer components containing other monomers are polymerized. And a precursor having a unit (u1) represented by the following formula (which is a unit derived from the monomer (m1)) and a unit (u41) (which is a unit derived from the monomer (m2)).
- a monomer (m3) described later is preferable as a monomer other than the monomer (m1) and the monomer (m2).
- CX 11 X 12 CR 1 -Q 1 -R f1 (m1)
- CX 21 X 22 CR 2 -Q 2 -R f2 -R 22 -OH (m2).
- R 1 , R 2 , X 11 , X 12 , X 21 , X 22 , Q 1 , Q 2 , R f1 , R f2 and R 22 are as described above.
- step (Ii) a reactive functional group capable of reacting with a hydroxyl group and a reactive functional group of a compound having a double bond (hereinafter referred to as compound (m4)) and a hydroxyl group in the unit (u41) of the precursor (P1)
- compound (m4) a reactive functional group capable of reacting with a hydroxyl group and a reactive functional group of a compound having a double bond
- a fluoropolymer (A1) having units (u1) and units (u21).
- step (ii) not all of the hydroxyl groups in the unit (u41) may be reacted with the compound (m4), and unreacted hydroxyl groups may remain. That is, the fluoropolymer (A1) may have a unit (u41).
- Examples of the monomer (m1) include known (meth) acrylates having R f1 , vinyl ethers, vinyl esters, allyl ethers, and the like.
- the monomer (m1) in which Q 1 is any one of groups (g21) to (g24) includes, for example, any one of the compounds (m11) to (m13) represented by the following formula and the compound (f1): Obtained by reaction.
- the reaction is carried out in the presence of a basic compound, and in the case of compound (m12), the reaction is carried out in the presence of a urethanization catalyst.
- X 13 is a chlorine atom, a bromine atom or an iodine atom.
- R 1 , X 11 , X 12 , R 10 , R 11 and R f1 are as described above.
- Examples of the monomer (m2) include known (meth) acrylates, vinyl ethers, vinyl esters, allyl ethers and the like having R f2 and a hydroxyl group.
- the monomer (m2) in which Q 2 is any one of groups (g31) to (g34) includes, for example, any one of compounds (m21) to (m24) represented by the following formula and compound (f2): Obtained by reaction.
- the reaction is carried out in the presence of a basic compound, and in the case of compound (m22), the reaction is carried out in the presence of a urethanization catalyst.
- X 23 is a chlorine atom, a bromine atom or an iodine atom.
- R 2 , X 21 , X 22 , R 20 , R 21 , R 22 and R f2 are as described above.
- Ep is an epoxy group.
- the monomer (m3) is a monomer other than the monomer (m1), the monomer (m2), and the monomer (m5) described later.
- the monomer (m3) a compound having neither a fluorine atom nor a reactive group and having a double bond is preferable.
- Specific examples of the monomer (m3) include (meth) acrylate compounds, aromatic vinyl compounds, vinyl ether compounds, vinylidene compounds, among which (meth) acrylate compounds are preferred, and methacrylate compounds are particularly preferred. .
- Specific compounds (m3) include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, behenyl (meth) acrylate, Phenyl (meth) acrylate, isooctyl (meth) acrylate, isodecyl (meth) acrylate, cyclohexyl (meth) acrylate, benzyl methacrylate, styrene, 4-hydroxystyrene, tert-butyl vinyl ether, cyclohexyl vinyl ether, 1,1-dichloroethylene, 1, Examples include 1-difluoroethylene.
- Examples of the polymerization initiator include known polymerization initiators.
- Examples of the polymerization method include a solution polymerization method, a bulk polymerization method, an emulsion polymerization method, and a suspension polymerization method, and the solution polymerization method is preferable.
- Examples of the solvent used in the solution polymerization method include known solvents.
- Step (ii): When Z 1 is a group (g41), X 24 of the compound (m41) represented by the following formula is reacted with the hydroxyl group in the unit (u41) of the precursor (P1) in the presence of a basic compound. To obtain a fluoropolymer (A1) having units (u1) and units (u21). X 24 -C (O) -CR 23 CH 2 (m41). However, X 24 is a chlorine atom, a bromine atom or an iodine atom. R 23 is as described above.
- Z 1 is a group (g43)
- X 24 of the compound (m43) represented by the following formula is reacted with the hydroxyl group in the unit (u41) of the precursor (P1) in the presence of a basic compound.
- a fluoropolymer (A1) having units (u1) and units (u21).
- X 24 is as described above.
- R 25 of the compound (m44) represented by the following formula is reacted with a hydroxyl group in the unit (u41) of the precursor (P1) in the presence of a palladium catalyst.
- a fluoropolymer (A1) having units (u1) and units (u21).
- R 25 is a monovalent alkyl group.
- the fluoropolymer (A2) is a copolymer having units (u1) and units (u22) represented by the following formula.
- the unit (u1) is the same as the unit (u1) of the fluoropolymer (A1), and the description is omitted. Also, for the unit (u22), the description of the same symbols as those of the unit (u21) of the fluoropolymer (A1) is omitted.
- Q 3 is —C (O) O—R 31 —, —CH 2 —, —CH 2 —O—R 31 —, —O—R 31 — or —OC (O) —R 31 —.
- R 31 is an alkylene group having 1 to 6 carbon atoms. Also, the left side of these groups bonded to the main chain of the copolymer, the right is bonded to Z 2.
- Q 3 include the following groups. -C (O) O-CH 2 CH 2- , —CH 2 —. However, the left of these groups bonded to the main chain of the copolymer, the right is bonded to Z 2.
- Z 2 is a monovalent organic group having a double bond (however, it does not have a fluorine atom).
- Z 2 include a double bond, various bonds (ether bond (—O—), ester bond (—C (O) O—), amide bond (—NHC (O) —), urethane bond (— NHC (O) O—), urea bond (—NHC (O) NH—) and the like) and an alkylene group.
- R 23 and R 24 are as described above.
- group (g51) and the group (g52) include the following groups.
- -OC (O) -CH CH 2 , —OC (O) —C (CH 3 ) ⁇ CH 2 , —OC (O) NH—CH 2 CH 2 —OC (O) —CH ⁇ CH 2 , —OC (O) NH—CH 2 CH 2 —OC (O) —C (CH 3 ) ⁇ CH 2 .
- a preferable combination of Q 3 and Z 2 is such that Q 3 is —C (O) O—R 31 — and Z 2 is a group (g52).
- the fluoropolymer (A2) may have units other than the unit (u1) and the unit (u22) within a range not impairing the effects of the present invention.
- Examples of the unit other than the unit (u1) and the unit (u22) include a unit derived from the above-described compound (m3), an unreacted unit (u42) described later, and the like.
- the ratio of each unit in the fluoropolymer (A2) is not particularly limited. From the viewpoint of the balance between the solubility of the fluorinated polymer (A2) in the solvent (D) and the reactivity with the crosslinking agent (B), in all units (100 mol%) constituting the fluorinated polymer (A2)
- the proportion of the unit (u1) is preferably 60 to 95 mol%, particularly preferably 70 to 90 mol%, and the proportion of the unit (u22) is preferably 5 to 40 mol%, particularly preferably 10 to 30 mol%. .
- the fluoropolymer (A2) can be produced, for example, by a method having the following step (i) and step (ii).
- the compound (m1) and the compound (m5) represented by the following formula are polymerized, and if necessary, monomer components containing other monomers are polymerized,
- the monomer (m3) is preferable as a monomer other than the monomer (m1) and the monomer (m5).
- CX 11 X 12 CR 1 -Q 1 -R f1 (m1)
- CX 21 X 22 CR 2 -Q 3 -OH (m5).
- R 1 , R 2 , X 11 , X 12 , X 21 , X 22 , Q 1 and Q 3 are as described above.
- Examples of the compound (m5) include allyl alcohol and known (meth) acrylates having a hydroxyl group, vinyl ethers, vinyl esters, allyl ethers, and the like.
- R 25 of the compound (m44) described above is reacted with a hydroxyl group in the unit (u42) of the precursor (P2) in the presence of a palladium catalyst to react with the unit (u1 And a fluoropolymer (A2) having units (u22).
- Crosslinking agent (B) is a compound having a double bond (excluding the fluororesin (A)). A cured film excellent in hardness and solvent resistance is formed by the reaction between the fluororesin (A) and the crosslinking agent (B).
- the double bond in the crosslinking agent (B) can undergo a polymerization reaction with the double bond in the fluororesin (A) by radicals generated from the photoinitiator to form a crosslinked structure.
- Examples of the group having a double bond include those exemplified as the group having a double bond of the fluororesin (A), and preferred forms thereof are also the same.
- the number of double bonds per molecule in the crosslinking agent (B) is preferably from 2 to 20, particularly preferably from 4 to 8. If the number of double bonds is not less than the lower limit of the above range, the hardness and solvent resistance of the cured film will be further improved. If the number of double bonds is not more than the upper limit of the above range, the viscosity of the crosslinking agent (B) can be kept low, and a uniform photosensitive resin composition can be easily obtained when mixed with the fluororesin (A).
- the number average molecular weight (Mn) of the crosslinking agent (B) is preferably 140 to 5,000, more preferably 200 to 3,000, and particularly preferably 250 to 2,500.
- the number average molecular weight (Mn) of the cross-linking agent (B) is not less than the lower limit of the above range, the cross-linking agent (B) is hardly volatilized by heating. If the number average molecular weight (Mn) of the cross-linking agent (B) is not more than the upper limit of the above range, the viscosity of the cross-linking agent (B) can be kept low and uniform photosensitive resin when mixed with the fluororesin (A). A composition is easily obtained.
- the crosslinking agent (B) is classified into a crosslinking agent having a fluorine atom (hereinafter referred to as a crosslinking agent (B1)) and a crosslinking agent having no fluorine atom (hereinafter referred to as a crosslinking agent (B2)).
- a crosslinking agent having a fluorine atom hereinafter referred to as a crosslinking agent (B1)
- a crosslinking agent having no fluorine atom hereinafter referred to as a crosslinking agent (B2)
- the cross-linking agent (B1) is preferable because the compatibility with the fluororesin (A) is improved and the surface smoothness of the resin film is excellent.
- the fluorine atom content of the crosslinking agent (B1) is preferably 20% by mass or more from the viewpoint that compatibility with the fluororesin (A) is improved and the surface smoothness of the resin film is excellent, and the crosslinking property is excellent. From the viewpoint of excellent compatibility with the fluororesin (A), 20 to 45% by mass is particularly preferable.
- the crosslinking agent (B1) a reaction product of a fluorine-containing alcohol and an ester of (meth) acrylic acid and a fluorine-containing alcohol and an isocyanate compound having a double bond are preferable.
- the fluorinated alcohol is preferably a divalent to hexavalent fluorinated polyhydric alcohol having a high fluorine atom content, and more preferably a divalent to tetravalent fluorinated polyhydric alcohol having a high fluorine atom content.
- the fluorinated alcohol is preferably a fluorinated alcohol that does not have a carbon atom to which a hydrogen atom is bonded, except for a carbon atom to which a hydroxyl group is bonded.
- the ester of the fluorinated alcohol and (meth) acrylic acid is preferably a polyester in which all the hydroxyl groups of the fluorinated alcohol are substituted with (meth) acryloyloxy groups, and the (meth) acryloyloxy group is preferably an acryloyloxy group.
- the isocyanate compound having a double bond is preferably an isocyanate compound having a (meth) acryloyloxy group, and the (meth) acryloyloxy group is preferably an acryloyloxy group.
- the isocyanate compound having a (meth) acryloyloxy group is preferably a compound having one or two (meth) acryloyloxy groups and one isocyanate group, and the (meth) acryloyloxy group and isocyanate group are The removed portion is preferably a hydrocarbon group.
- the hydrocarbon group an aliphatic hydrocarbon group or an alicyclic hydrocarbon group is preferable.
- Specific examples of the isocyanate compound having an acryloyloxy group include 2-isocyanatoethyl acrylate and 1,3-bisacryloyloxy-2-methylpropane-2-isocyanate.
- Specific compounds that can be used as the crosslinking agent (B1) include, for example, compounds described in JP2013-181140A and JP4879560A.
- crosslinking agent (B1) examples include compounds (B1-1) to (B1-4) represented by the following formulas.
- the fluorine atom contents of the compounds (B1-1) to (B1-4) are as follows. Compound (B1-1): 44.9% by mass, Compound (B1-2): 32.3% by mass, Compound (B1-3): 27.1% by mass, Compound (B1-4): 20.5 mass%.
- crosslinking agent (B2) examples include, for example, tris (2-acryloyloxyethyl) isocyanurate, 1,10-decanediol diacrylate, 1,9-nonanediol diacrylate, and 1,9-nonanediol dimethacrylate.
- Photoinitiator examples include a photoradical polymerization initiator that generates radicals by absorbing light.
- radical photopolymerization initiator examples include known ones.
- the radical photopolymerization initiator can be appropriately selected according to the type of light (wavelength or the like).
- examples of the radical photopolymerization initiator include oxime ester photopolymerization initiators, alkylphenone photopolymerization initiators, and acylphosphine oxide photopolymerization initiators. Specific examples of the radical photopolymerization initiator include the following.
- Oxime ester derivative 1,2-octanedione-1- [4- (phenylthio) -2- (o-benzoyloxime)] (manufactured by BASF, IRGACURE® OXE01), ethanone 1- [9-ethyl- 6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (o-acetyloxime) (manufactured by BASF, IRGACURE (registered trademark) OXE02) and the like.
- ⁇ -Aminoalkylphenone compound IRGACURE (registered trademark) manufactured by BASF 369, IRGACURE (registered trademark) 907, and the like.
- Acylphosphine oxide compounds DAROCUR (registered trademark) TPO and the like.
- IRGACURE registered trademark
- IRGACURE registered trademark
- OXE02 is preferable from the viewpoint of excellent reactivity of generated radicals.
- the solvent (D) is a solvent composed of a fluorine-containing compound having no aromatic ring and liquid at 25 ° C. Since it is a solvent, the solvent (D) is a compound that does not react with components contained in the photosensitive resin composition such as the fluororesin (A), the crosslinking agent (B), and the photoinitiator.
- the solvent (D) is made of an organic compound having a fluorine atom that does not have an aromatic ring, and may have an atom other than a carbon atom or a fluorine atom, such as an oxygen atom, a nitrogen atom, or a halogen atom other than a fluorine atom. Good.
- the hydrogen atom may or may not have a hydrogen atom.
- the organic compound having no aromatic ring include aliphatic hydrocarbons, alicyclic hydrocarbons, non-aromatic alcohols, non-aromatic ethers, non-aromatic amines, etc., and solvent (D) are preferably fluorine-containing organic compounds having a structure in which some or all of the hydrogen atoms bonded to carbon atoms of these organic compounds are substituted with fluorine atoms. Further, some of the fluorine atoms may be halogen atoms other than fluorine atoms such as chlorine atoms.
- the solvent (D) examples include fluorinated aliphatic hydrocarbon compounds such as fluorinated decalin, fluorinated cyclohexane, fluorinated hexane, fluorinated octane, and fluorinated decane; fluorinated tripentylamine, fluorinated tributylamine, fluorine Fluorinated alkylamine compounds such as fluorinated tripropylamine; fluorinated alcohol compounds such as fluorinated propanol, fluorinated pentanol, fluorinated heptanol and fluorinated octanol; fluorinated compounds such as fluorinated butyl methyl ether and fluorinated butyl ethyl ether Aliphatic ether compounds; fluorinated cyclic ether compounds such as fluorinated 2-butyltetrahydrofuran;
- the solvent (D) is preferably a fluorine-containing compound having a
- the ratio of the number of fluorine atoms may be 100%.
- a fluorine-containing compound having a hydrogen atom bonded to a carbon atom that is, the ratio of the number of fluorine atoms is less than 100%
- Fluorine compound is preferable, and a fluorine-containing alcohol compound is particularly preferable.
- the solvent (D) include the following compounds. 1H-tridecafluorohexane (Asahi Glass Co., Ltd., Asahiklin (registered trademark) AC2000, boiling point: 71 ° C.), 1,1,1,2,2,3,3,4,4,5,5,6,6-tridecafluorooctane (Asahi Glass Co., Ltd., ASAHIKLIN (registered trademark) AC6000, boiling point: 115 ° C.), 1,1,2,2-tetrafluoro-1- (2,2,2-trifluoroethoxy) ethane (Asahi Glass Co., Ltd., Asahiklin (registered trademark) AE3000, boiling point: 56 ° C.), A mixture of 1,1-dichloro-2,2,3,3,3-pentafluoropropane and 1,3-dichloro-1,1,2,2,3-pentafluoropropane in a mass ratio of 45:55 (Asah
- the boiling point of the solvent (D) is preferably 80 ° C. or higher and particularly preferably 100 ° C. or higher from the viewpoint of obtaining a resin film having excellent flatness.
- a solvent (D) may be used individually by 1 type, and may use 2 or more types together.
- the photosensitive resin composition of the present invention may contain components other than those described above (hereinafter referred to as “other components”) as long as the effects of the present invention are not impaired.
- Other components include, for example, photosensitizers, antioxidants, thermal polymerization initiators, thermal polymerization inhibitors, adhesion promoters, leveling agents, antifoaming agents, suspending agents, dispersants, plasticizers, thickening agents. Agents and the like.
- a thermal polymerization initiator may be included together with the photoinitiator.
- the thermal polymerization initiator include azobisisobutyronitrile, benzoyl peroxide, tert-butyl hydroperoxide, cumene hydroperoxide, di-tert-butyl peroxide, and dicumyl peroxide. From the viewpoint of the decomposition temperature, azobisisobutyronitrile or benzoyl peroxide is preferred.
- the adhesion between the resin film and a layer (such as an organic semiconductor layer) adjacent to the resin film is further improved.
- the adhesion promoter include silane coupling agents, titanate coupling agents, aluminum coupling agents and the like.
- the solid content concentration of the photosensitive resin composition of the present invention is preferably 3 to 40% by mass, particularly preferably 5 to 20% by mass. If the solid content concentration is not less than the lower limit of the above range, a resin film having a film thickness sufficient to obtain insulation can be obtained. If solid content concentration is below the upper limit of the said range, solution viscosity is comparatively low and it is excellent in film forming property.
- the solid content concentration of the photosensitive resin composition of the present invention is a value calculated from the mass of the photosensitive resin composition before heating and the mass after heating for 4 hours in a convection dryer at 120 ° C. It is. Moreover, the density
- the proportion of the fluororesin (A) in the photosensitive resin composition of the present invention is preferably 60 to 90 mass% of the total (100 mass%) of the fluororesin (A) and the crosslinking agent (B). From 90% by weight is particularly preferred.
- the ratio of the fluororesin (A) is at least the lower limit of the above range, a resin film excellent in low dielectric constant and low dielectric loss can be obtained. If the ratio of a fluororesin (A) is below the upper limit of the said range, the resin film which is excellent in hardness and solvent resistance will be obtained.
- the ratio of the crosslinking agent (B) in the photosensitive resin composition of the present invention is preferably 10 to 40% by mass in the total (100% by mass) of the fluororesin (A) and the crosslinking agent (B). ⁇ 30% by weight is particularly preferred. If the ratio of a crosslinking agent (B) is more than the lower limit of the said range, the resin film which is excellent in hardness and solvent resistance will be obtained. When the ratio of the crosslinking agent (B) is not more than the upper limit of the above range, a resin film excellent in low dielectric constant and low dielectric loss can be obtained.
- the content of the photoinitiator in the photosensitive resin composition of the present invention is preferably 1 to 20 parts by mass with respect to 100 parts by mass in total of the fluororesin (A) and the crosslinking agent (B). Part by mass is particularly preferred. If content of a photoinitiator is more than the lower limit of the said range, it is excellent in photocurability. If content of a photoinitiator is below the upper limit of the said range, the quantity of the unreacted photoinitiator contained in a resin film will be suppressed.
- the content of other components in the photosensitive resin composition of the present invention is preferably 0 to 20 parts by mass, and preferably 0 to 10 parts per 100 parts by mass in total of the fluororesin (A) and the crosslinking agent (B). Part by mass is particularly preferred. If the content of other components is not more than the upper limit of the above range, a resin film excellent in low dielectric constant and low dielectric loss can be obtained.
- the photosensitive resin composition of the present invention hardly damages the organic semiconductor layer when forming the insulating film.
- the photosensitive resin composition of the present invention hardly damages the substrate even when a resin film (such as a liquid repellent film) other than the insulating film is formed on the substrate.
- the resin film in the present invention is obtained by applying the photosensitive resin composition of the present invention on a substrate, removing the solvent (D) to form a dry coating film, and exposing and curing the dry film. It is a cured film.
- the method for producing a resin film of the present invention is characterized in that the photosensitive resin composition of the present invention is applied on a substrate, a solvent (D) is removed to form a film, and then exposed.
- the resin film examples include an insulating film and a protective film in an organic semiconductor element, a liquid repellent film (a water repellent film, an oil repellent film, an antifouling film, and the like) in a liquid repellent member, and the insulating film is particularly preferable.
- a liquid repellent film a water repellent film, an oil repellent film, an antifouling film, and the like
- examples of the substrate include a gate electrode, a source electrode, a drain electrode, an organic semiconductor layer, an organic light emitting layer, and an organic photoelectric conversion layer.
- examples of the substrate include a glass plate, a resin plate, a silicon wafer, and the like.
- examples of the base material include base materials (organic semiconductor layers, resin plates, organic light emitting layers, organic photoelectric conversion layers, etc.) made of organic compounds that do not contain fluorine that are easily damaged by aromatic fluorine-containing solvents and non-fluorinated solvents. It is preferable in the present invention.
- the insulating film made of the resin film may be a gate insulating film, an interlayer insulating film, or an insulating film other than the gate insulating film and the interlayer insulating film, as long as it is formed on the organic semiconductor layer. It may be a protective film.
- the method for producing a resin film will be described in detail as a method for forming an insulating film in the method for producing an organic semiconductor element of the present invention described later.
- the resin film in the present invention is formed by applying the photosensitive resin composition of the present invention on the base material, which hardly damages the base material such as the organic semiconductor layer, and removing the solvent (D) and then curing it. Therefore, when forming the resin film containing the fluororesin (A), it is difficult to damage the base material such as the organic semiconductor layer.
- the organic semiconductor element in the present invention is formed by applying the photosensitive resin composition of the present invention on the organic semiconductor layer, removing the solvent (D) to form a dry coating film, and then exposing and curing. It has an insulating film made of a film (resin film).
- the manufacturing method of the organic-semiconductor element of this invention is mentioned later.
- FIG. 1 is a cross-sectional view showing a first embodiment of an organic semiconductor element.
- the organic semiconductor element 1 includes a gate electrode 10, a gate insulating film 11 formed on the gate electrode 10, a source electrode 12 and a drain electrode 13 formed on the gate insulating film 11, and a source on the gate insulating film 11.
- An organic semiconductor layer 14 formed between the electrode 12 and the drain electrode 13, and an interlayer insulating film 15 formed so as to cover the source electrode 12, the drain electrode 13, and the organic semiconductor layer 14.
- a hole 16 reaching the drain electrode 13 from the upper surface of the interlayer insulating film 15 is formed in the interlayer insulating film 15.
- the organic semiconductor element 1 is a bottom gate / bottom contact type element.
- FIG. 2 is a cross-sectional view showing a second embodiment of the organic semiconductor element.
- the organic semiconductor element 2 includes a substrate 21, a base insulating film 22 formed on the substrate 21, a source electrode 23 and a drain electrode 24 formed on the base insulating film 22, and a source electrode 23 on the base insulating film 22.
- the gate insulating film 26 formed so as to cover the source electrode 23, the drain electrode 24, and the organic semiconductor layer 25.
- an interlayer insulating film 28 formed on the gate insulating film 26 so as to cover the gate electrode 27.
- a hole 29 reaching the drain electrode 24 from the upper surface of the interlayer insulating film 28 is formed in the gate insulating film 26 and the interlayer insulating film 28.
- the organic semiconductor element 2 is a top gate / bottom contact type element.
- FIG. 3 is a cross-sectional view showing a third embodiment of the organic semiconductor element.
- the organic semiconductor element 3 includes a gate electrode 31, a gate insulating film 32 formed on the gate electrode 31, an organic semiconductor layer 33 formed on the gate insulating film 32, and an organic semiconductor layer 33 on the gate insulating film 32. Formed so as to cover the source electrode 34, the drain electrode 35, and the protective insulating film 36 formed on the organic semiconductor layer 33, and the source electrode 34, the drain electrode 35, and the protective insulating film 36.
- a hole 38 reaching the drain electrode 35 from the upper surface of the interlayer insulating film 37 is formed in the interlayer insulating film 37.
- the organic semiconductor element 3 is a bottom gate / top contact type element.
- the protective insulating film 36 functions as a sealing layer for the organic semiconductor layer 33.
- the interlayer insulating film 37 is formed by the protective insulating film 36, it is possible to suppress damage to the organic semiconductor layer 33 by a radical polymerization initiator or a solvent in the photosensitive resin composition that forms the interlayer insulating film 37.
- the photosensitive resin composition of the present invention that hardly damages the organic semiconductor layer is applied onto the organic semiconductor layer, the solvent (D) is removed, and then the exposure is performed. Since the insulating film (interlayer insulating film 15 in FIG. 1, gate insulating film 26 in FIG. 2, protective insulating film 36 in FIG. 3) is formed, the organic semiconductor layer is damaged when forming the insulating film. Is suppressed.
- the manufacturing method of the organic semiconductor element of this invention apply
- a method having a forming step and a known method can be adopted except that the photosensitive resin composition of the present invention is used when forming an insulating film on the organic semiconductor layer.
- an example of a method for producing an organic semiconductor element of the present invention will be described and described.
- Examples of the method for manufacturing the organic semiconductor element 1 of the first embodiment include a method having the following steps ( ⁇ 1) to ( ⁇ 4).
- ( ⁇ 1) A step of forming the gate insulating film 11 on the gate electrode 10.
- ( ⁇ 2) A step of forming the source electrode 12 and the drain electrode 13 on the gate insulating film 11.
- ( ⁇ 3) A step of forming the organic semiconductor layer 14 between the source electrode 12 and the drain electrode 13 on the gate insulating film 11.
- the photosensitive resin composition of the present invention is applied on the source electrode 12, the drain electrode 13 and the organic semiconductor layer 14, the solvent (D) is removed to form a dry coating film, and then the dry coating film is formed.
- the interlayer insulating film 15 having the holes 16 is formed by a photolithography method at the time of exposure.
- organic semiconductor constituting the organic semiconductor layer 14 known low molecular compounds, oligomers, and polymers can be used, and there is no particular limitation.
- the low molecular weight compound include pentacene, rubrene, phthalocyanine, perylene, fullerene or derivatives thereof, sulfur-containing compounds (compound (s-1), compound (s-2) and the like represented by the following formula), and the like.
- Examples of the oligomer include oligothiophene or a derivative thereof.
- Examples of the polymer include poly-p-phenylene vinylene, polyfluorene, fluorene-benzothiadiazole copolymer, fluorene-triphenylamine copolymer, fluorene-dithiophene copolymer, polythiophene, polyaniline, polyacetylene, polypyrrole, and derivatives thereof. Is mentioned.
- Examples of the precursor material include silylethyne-substituted pentacene and tetrabicycloporphyrin derivatives. These materials can be converted into pentacene and tetrabenzoporphyrin derivatives by heating.
- the photosensitive resin composition of the present invention is applied on the source electrode 12, the drain electrode 13 and the organic semiconductor layer 14 to form an undried coating film, and the solvent (D) is removed to form a dried coating film. Thereafter, the interlayer insulating film 15 is formed by exposing to cure the dried coating film.
- a coating method of the photosensitive resin composition of the present invention a known wet coating method can be used. Examples of the method for removing the solvent (D) in the undried coating film include heating, reduced pressure, and a method in which heating and reduced pressure are combined. Heating at normal pressure is preferred from the viewpoint that defects in the dried coating film are less likely to occur and the operation is simple.
- the heating temperature is preferably 30 to 200 ° C, particularly preferably 40 to 150 ° C.
- the holes 16 can be formed in the interlayer insulating film 15 by photolithography. Specifically, the part except the part which forms the hole 16 in a dry coating film is exposed, and an exposed part is hardened. Thereafter, the interlayer insulating film 15 having the holes 16 is formed by developing with a developing solution and removing the unexposed portions.
- Examples of the exposure method for the dried coating film include a method in which exposure is performed through a mask in a pressure mode, a vacuum contact mode, a proximity mode or the like using an exposure apparatus such as an aligner or a stepper.
- an exposure apparatus such as an aligner or a stepper.
- X-rays, ultraviolet rays, visible rays and the like including wavelengths absorbed by a photoinitiator or the like can be used.
- a light source used for exposure a light source capable of emitting ultraviolet light or visible light is preferable, and an ultrahigh pressure mercury arc is particularly preferable.
- the dose is set according to the thickness of the interlayer insulating film 15 and the type of the photoinitiator. For example, when the thickness of the interlayer insulating film 15 is 10 ⁇ m, the dose is preferably 100 to 2,000 mJ / cm 2 .
- Baking post-exposure baking
- the baking temperature varies depending on the type of intermediate, but is preferably 50 to 250 ° C. Moreover, you may heat during exposure for the same objective.
- Development can be carried out by a known method such as spraying, paddle, dipping or ultrasonic.
- a solvent in which the resin in the exposed area is insoluble or only slightly soluble and the resin in the unexposed area is soluble is used.
- a fluorine-containing solvent is preferable, and the same one as the solvent (D) is particularly preferable.
- the resin in the unexposed area is dissolved, and if necessary, rinse with a rinsing liquid and spin (rotate) at high speed for drying.
- the rinsing solution is not particularly limited as long as it is the same as the developing solution, or the developing solution is not as highly soluble as the resin in the unexposed area, and is compatible with the developing solution.
- baking may be performed to remove the developer or rinse liquid remaining in the exposed area.
- the baking can be performed by a hot plate, an oven or the like, and the baking conditions are preferably 80 to 200 ° C. and 0.5 to 60 minutes.
- the organic semiconductor element 1 can be manufactured by the manufacturing method including the steps ( ⁇ 1) to ( ⁇ 4) described above.
- the organic semiconductor element 1 obtained by the manufacturing method uses the photosensitive resin composition of the present invention containing the solvent (D) when forming the interlayer insulating film 15 on the organic semiconductor layer 14. Damage is suppressed. Therefore, the organic semiconductor element 1 obtained by the manufacturing method has excellent characteristics.
- Examples of the method for manufacturing the organic semiconductor element 2 of the second embodiment include a method having the following steps ( ⁇ 1) to ( ⁇ 6).
- ( ⁇ 1) A step of forming the base insulating film 22 on the substrate 21.
- ( ⁇ 2) A step of forming the source electrode 23 and the drain electrode 24 on the base insulating film 22.
- ( ⁇ 3) A step of forming the organic semiconductor layer 25 between the source electrode 23 and the drain electrode 24 on the base insulating film 22.
- the photosensitive resin composition of the present invention is applied on the source electrode 23, the drain electrode 24, and the organic semiconductor layer 25, and the solvent (D) is removed to form a dry coating film.
- the gate insulating film 15 having the holes 29 is formed by a photolithography method at the time of exposure.
- ⁇ Process ( ⁇ 4)> The photosensitive resin composition of the present invention is applied onto the source electrode 23, the drain electrode 24 and the organic semiconductor layer 25 to form an undried coating film, and the solvent (D) is removed to form a dried coating film. Thereafter, exposure is performed to cure the dried coating film, thereby forming the gate insulating film 26.
- Examples of the method for applying the photosensitive resin composition of the present invention and the method for removing the solvent (D) in the undried coating film include the same methods as in the step ( ⁇ 4) of the first embodiment.
- the organic semiconductor element 2 can be manufactured by the manufacturing method including the steps ( ⁇ 1) to ( ⁇ 6) described above.
- the organic semiconductor element 2 obtained by the manufacturing method uses the photosensitive resin composition of the present invention containing the solvent (D) when forming the gate insulating film 26 on the organic semiconductor layer 25. Damage is suppressed. Therefore, the organic semiconductor element 2 obtained by the manufacturing method has excellent characteristics.
- Examples of the method for producing the organic semiconductor element 3 of the third embodiment include a method having the following steps ( ⁇ 1) to ( ⁇ 5).
- ( ⁇ 1) A step of forming a gate insulating film 32 on the gate electrode 31.
- ( ⁇ 2) A step of forming the organic semiconductor layer 33 on the gate insulating film 32.
- ( ⁇ 3) A step of forming the source electrode 34 and the drain electrode 35 on the gate insulating film 32 so as to face each other with the organic semiconductor layer 33 interposed therebetween.
- the photosensitive resin composition of the present invention is applied onto the organic semiconductor layer 33, the solvent (D) is removed to form a dry coating film, and then the dry coating film is exposed to form the protective insulating film 36. Forming step.
- a step of forming an interlayer insulating film 37 on the source electrode 34, the drain electrode 35 and the organic semiconductor layer 33 As a method of forming the interlayer insulating film 37, a method having the above-described steps ( ⁇ 1) to ( ⁇ 4) can be cited.
- the interlayer insulating film 37 having the holes 38 is formed by photolithography at the time of exposure.
- ⁇ Process ( ⁇ 4)> The photosensitive resin composition of the present invention is applied so as to cover portions of the organic semiconductor layer 33 that are not covered with the source electrode 34 and the drain electrode 35 to form an undried coating film, and the solvent (D) is removed. A dry coating film is formed, and then the dry coating film is exposed and cured to form the protective insulating film 36.
- Examples of the method for applying the photosensitive resin composition of the present invention and the method for removing the solvent (D) in the undried coating film include the same methods as in the step ( ⁇ 4) of the first embodiment.
- the organic semiconductor element 3 can be manufactured by the manufacturing method including the steps ( ⁇ 1) to ( ⁇ 5) described above.
- the organic semiconductor element 3 obtained by the manufacturing method uses the photosensitive resin composition of the present invention containing the solvent (D) when forming the protective insulating film 36 on the organic semiconductor layer 33. Damage is suppressed. Therefore, the organic semiconductor element 3 obtained by the manufacturing method has excellent characteristics.
- the manufacturing method of the organic-semiconductor element of this invention was shown by showing 1st-3rd embodiment, the manufacturing method of the organic-semiconductor element of this invention is not limited to these embodiment.
- the organic semiconductor elements 1 to 3 shown in the first to third embodiments are examples of those that can be manufactured by the method of manufacturing an organic semiconductor element, and the insulating film formed on the organic semiconductor layer is formed of the photosensitive resin composition of the present invention.
- Other embodiments are not particularly limited as long as they are formed by a product.
- the method for producing an organic semiconductor element of the present invention may be a method for producing a top gate / top contact type organic semiconductor element.
- Example 1 to 14 are production examples
- Examples 15 to 21 and 25 to 37 are examples
- Example 22 is a reference example
- Examples 23, 24, and 38 to 40 are comparative examples.
- Compound (m1) Compound (m1-1): A compound represented by the following formula (m1-1) produced by the method described in Example 1 of JP-A No. 2004-359616.
- Compound (m5) Compound (m5-1): A compound represented by the following formula (m5-1) (manufactured by Junsei Chemical Co., Ltd., 2-hydroxyethyl methacrylate).
- Compound (m4) Compound (m42-1): Compound represented by the following formula (m42-1) (produced by Showa Denko KK, Karenz AOI (registered trademark)).
- Compound (B1-3) A compound represented by the following formula (B1-3) produced by the method described in Example 9 of Japanese Patent No. 4879560.
- Compound (B2-1) A compound represented by the following formula (B2-1) (manufactured by Shin-Nakamura Chemical Co., Ltd., A-TMMT).
- OXE01 1,2-octanedione-1- [4- (phenylthio) -2- (o-benzoyloxime)] (manufactured by BASF, IRGACURE (registered trademark) OXE01),
- OXE02 Ethanone 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (o-acetyloxime) (manufactured by BASF, IRGACURE® OXE02).
- HFB hexafluorobenzene
- Novec7200 1-ethoxynonafluorobutane (manufactured by 3M Japan, Novec (registered trademark) 7200)
- AK-225 mass ratio of 1,1-dichloro-2,2,3,3,3-pentafluoropropane to 1,3-dichloro-1,1,2,2,3-pentafluoropropane 45:55
- AK-225 mass ratio of 1,1-dichloro-2,2,3,3,3-pentafluoropropane to 1,3-dichloro-1,1,2,2,3-pentafluoropropane 45:55
- Asahi Kulin (registered trademark) AK-225 manufactured by Asahi Glass Co., Ltd.
- Mass average molecular weight The mass average molecular weight (Mw) of the fluororesin or the cross-linking agent was determined using a standard polymethyl methacrylate sample having a known molecular weight from a chromatogram obtained by a high speed gel permeation chromatography (GPC) apparatus (HLC-8220, manufactured by Tosoh Corporation). It was obtained using a calibration curve prepared in the above.
- GPC gel permeation chromatography
- a photosensitive resin composition is spin-coated on the surface of a 6-inch silicon wafer (manufactured by Mitsubishi Materials Trading Co., Ltd.) at 1,000 rpm for 30 seconds and heated at 60 ° C. for 60 seconds using a hot plate to dry a coating film Formed. Using a high-pressure mercury lamp as a light source, the dry coating film was exposed so that the exposure energy was 1 J / cm 2 to cure the dry coating film. In order to accelerate the curing of the dried coating film, it was baked at 160 ° C. for 30 minutes in a nitrogen atmosphere to form a cured film. For the flatness of the cured film, the arithmetic surface roughness (Ra) described in JIS B0601: 2001 was determined using a surf coder (manufactured by Kosaka Laboratory, ET4000).
- a photosensitive resin composition is spin-coated on the surface of a 6-inch silicon wafer (manufactured by Mitsubishi Materials Trading Co., Ltd.) at 1,000 rpm for 30 seconds and heated at 60 ° C. for 60 seconds using a hot plate to dry a coating film Formed.
- a high-pressure mercury lamp as the light source, and exposing the dried coating film through a mask (a mask that can form a square hole pattern with each side changed by 10 ⁇ m from 10 ⁇ m to 60 ⁇ m) so that the exposure energy is 600 mJ / cm 2
- a part (exposed part) of the dried coating film was cured. In order to accelerate the curing of the dried coating film, it was heated at 100 ° C.
- the cured film was subjected to dip development for 30 seconds using OFPO as a developer to form a cured film having a hole pattern corresponding to the mask. In order to remove the developer and the rinse solution, spin drying was performed at 2,000 rpm for 30 seconds. The thickness of the cured film in the portion not removed by development was 0.6 ⁇ m. The cured film was observed with a microscope (manufactured by KEYENCE, VHX DIGITAL MICROSCOPE), and the minimum pattern diameter with holes opened was defined as the resolution.
- an impurity-added Si substrate (gate electrode 101) having a 100 nm thick SiO 2 thin film (gate insulating film 102, dielectric constant: 3.9) formed on the surface (Ryoko Sangyo Co., Ltd.)
- the surface of the manufactured product was treated with trimethoxy (2-phenylethyl) silane to form a self-assembled monolayer (SAM film 103) to obtain a laminate 104.
- the compound (s-1) is vacuum-deposited on the surface of the SAM film 103 of the laminate 104 (back pressure: ⁇ 10 ⁇ 4 Pa, vapor deposition rate: 0.1 kg / second). Then, the organic semiconductor layer 105 having a thickness of 70 nm was formed.
- the channel length was 200 ⁇ m and the channel width was 2,000 ⁇ m.
- a voltage is applied to the gate electrode 101 while changing the voltage from +20 V to ⁇ 30 V. Further, a voltage of ⁇ 30 V is applied between the source electrode 106 and the drain electrode 107, and a current flowing between the source electrode 106 and the drain electrode 107 is applied. The value was measured using a semiconductor device analyzer (manufactured by Agilent Technologies). The square root of the obtained on-current (drain current) and the gate voltage were plotted on a graph, and the carrier mobility ⁇ 1 was obtained from the slope.
- the surface of the organic semiconductor layer 105, the source electrode 106, and the drain electrode 107 is spin-coated with a photosensitive resin composition at 1,000 rpm for 30 seconds, and heated at 60 ° C. for 60 seconds using a hot plate. A dry coating was formed. Using a high-pressure mercury lamp as a light source, light having a wavelength of 365 nm was exposed to an exposure energy of 100 mJ / cm 2 and heated at 100 ° C. for 90 seconds to form an interlayer insulating film (not shown).
- the carrier mobility ⁇ 2 was determined in the same manner as the organic semiconductor element 100 before forming the interlayer insulating film.
- PTFE polytetrafluoroethylene
- Example 6 to 14 A precursor was produced in the same manner as in Example 5 except that the production conditions in Table 1 were changed.
- Precursor (P1-9) 1 H-NMR (300.4 MHz, solvent: d-acetone, standard: TMS) ⁇ (ppm): 2.7 (br, 3H), 4.1 (br, 7H), 4 .3 (br, 3H) 4.7 (br, 7H).
- Precursor (P1-10) 1 H-NMR (300.4 MHz, solvent: d-acetone, standard: TMS) ⁇ (ppm): 4.1 (br, 3H), 4.6 (br, 10H).
- Example 15 Production of fluororesin (A1-1): 1.5 g of the precursor (P1-1), 0.2 mg of dibutyltin dilaurate and 2.45 mg of benzohydroxytoluene are dissolved in 13.5 g of Novec7200, and 0.05 g of the compound (m42-1) is added. And shaken at 40 ° C. for 24 hours. The reaction solution was added to 300 mL of hexane, and the precipitated solid was filtered through a PTFE filter having a pore size of 3 ⁇ m to obtain a fluororesin (A1-1) having units (u1-1) and units (u21-1). The results are shown in Table 2.
- Example 16 to 24 A fluororesin was produced in the same manner as in Example 15 except that the production conditions in Table 2 were changed. The results are shown in Table 2.
- Fluororesin (X-9) 1 H-NMR (300.4 MHz, solvent: d-acetone, standard: TMS) ⁇ (ppm): 2.7 (br, 4H), 3.4 (q, 6H), 4 1 (m, 15H), 4.3 (br, 3H), 4.7 (br, 10H) 5.2 (br, 10H), 5.9 to 6.4 (m, 10H).
- Fluorine resin (X-10) ⁇ (ppm): 3.6 (q, 1H), 3.8 (m, 1H), 4.4 (br, 4H), 4.8 (br, 10H), 6. 1 to 6.7 (m, 1H).
- each unit of the precursor obtained in an Example and a fluororesin is represented by the following Formula.
- Example 25 Place 0.30 g of fluororesin (A1-1), 0.20 g of compound (B1-3), 0.05 g of OXE02, and 4.25 g of OFPO in a glass vial (20 mL), stir well, and It was set as the solution. The obtained solution was filtered with a PTFE filter having a pore size of 0.20 ⁇ m to prepare a photosensitive resin composition. Each evaluation was performed using this photosensitive resin composition. The results are shown in Table 3.
- Example 26 to 40 Photosensitive resin compositions of Examples 26 to 40 were prepared in the same manner as Example 25 except that the types and / or amounts of the components were changed. Each evaluation was performed using this photosensitive resin composition. The results are shown in Table 3.
- Examples 25 to 37 since the fluororesin (A) and the solvent (D) having a fluorine atom content of 47% by mass or more were used, the solubility, resolution, and device characteristics were excellent.
- Example 38 although the fluororesin (A) was used, the element characteristics were inferior because an aromatic fluorine-containing solvent was used.
- Examples 39 and 40 since the fluororesin (X) having a fluorine atom content of less than 47% by mass was used, the solubility in the solvent (D) was poor.
- the photosensitive resin composition of the present invention is useful as a coating material for forming a resin film containing a fluororesin on a base material such as an organic semiconductor layer that is easily damaged by an aromatic fluorinated solvent or a non-fluorinated solvent. is there.
- a composition for forming an insulating film for forming an insulating film in an organic semiconductor element a composition for forming a protective film for forming a protective film in an organic semiconductor element or an organic light-emitting diode
- a liquid film water repellent film, oil repellent film, antifouling film, etc., specifically, a lyophilic pattern composed of a lyophilic part and a lyophobic part, a lyophobic insulating film of an electrowetting element, etc.
- a composition for forming a liquid repellent film examples thereof include a composition for forming a liquid repellent film, and a composition for forming an insulating film is particularly preferable.
- the organic semiconductor element can be used as an organic thin film transistor (TFT) element, a field effect transistor (FET) element, or the like in electronic devices such as liquid crystal televisions, organic EL televisions, electronic paper, and RF-IDs.
- TFT organic thin film transistor
- FET field effect transistor
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Abstract
Description
[1]下記フッ素樹脂(A)と下記架橋剤(B)と光開始剤と下記溶媒(D)とを含むことを特徴とする感光性樹脂組成物。
フッ素樹脂(A):重合性炭素-炭素二重結合を有し、フッ素原子含有率が47質量%以上であるフッ素樹脂。
架橋剤(B):重合性炭素-炭素二重結合を有する架橋剤(ただし、前記フッ素樹脂(A)を除く。)。
溶媒(D):芳香環を有しない含フッ素化合物からなり、25℃において液状である溶媒。
R1およびR2は、それぞれ独立に水素原子、メチル基、エチル基またはハロゲン原子であり、
X11、X12、X21およびX22は、それぞれ独立に水素原子またはハロゲン原子であり、
Q1およびQ2は、それぞれ独立に2価の連結基であり、
Rf1は、炭素数1~10のペルフルオロアルキル基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキル基であり、
Rf2は、炭素数1~10のペルフルオロアルキレン基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキレン基であり、
Z1は、重合性炭素-炭素二重結合を有する1価の有機基である。
[4]前記感光性樹脂組成物中の固形分濃度が、3~40質量%である、[1]~[3]のいずれかの感光性樹脂組成物。
[5]前記フッ素樹脂(A)および前記架橋剤(B)の合計(100質量%)のうち、前記フッ素樹脂(A)の割合が60~90質量%であり、前記架橋剤(B)の割合が10~40質量%である、[1]~[4]のいずれかの感光性樹脂組成物。
[6]前記溶媒(D)が、含フッ素脂肪族炭化水素化合物、含フッ素アルキルアミン化合物、含フッ素アルコール化合物、含フッ素脂肪族エーテル化合物または含フッ素環状エーテル化合物である、[1]~[5]のいずれかの感光性樹脂組成物。
[7]前記溶媒(D)の沸点が、80℃以上である、[1]~[6]のいずれかに記載の感光性樹脂組成物。
[8]有機半導体層上に絶縁膜を形成するための絶縁膜形成用組成物である、[1]~[7]のいずれかの感光性樹脂組成物。
[10]前記[1]~[8]のいずれかの感光性樹脂組成物を有機半導体層上に塗布し、前記溶媒(D)を除去し、その後露光して絶縁膜を形成する工程を有することを特徴とする有機半導体素子の製造方法。
R1およびR2は、それぞれ独立に水素原子、メチル基、エチル基またはハロゲン原子であり、
X11、X12、X21およびX22は、それぞれ独立に水素原子またはハロゲン原子であり、
Q1およびQ2は、それぞれ独立に2価の連結基であり、
Rf1は、炭素数1~10のペルフルオロアルキル基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキル基であり、
Rf2は、炭素数1~10のペルフルオロアルキレン基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキレン基であり、
Z1は、重合性炭素-炭素二重結合を有する1価の有機基である。
本発明の樹脂膜の製造方法によれば、樹脂膜を形成する際に有機半導体等の基材にダメージを与えにくい。
本発明の有機半導体素子の製造方法によれば、絶縁膜を形成する際に有機半導体層にダメージを与えにくい。
本発明の架橋性フッ素樹脂は、非芳香族系含フッ素溶媒への溶解性が高い。
「未乾燥塗膜」とは、溶媒を含む感光性樹脂組成物を塗布して形成される、溶媒を除去する前の膜を意味する。
「乾燥塗膜」とは、未乾燥塗膜から溶媒を除去した膜を意味する。
「硬化膜」とは、乾燥塗膜を硬化させた膜を意味する。また、硬化膜を樹脂膜ともいう。
「絶縁性を有する」とは、二重リング電極法により測定される体積固有抵抗が1010Ω・cm以上であることを意味する。
「単位」とは、重合体中に存在して重合体を構成する、単量体に由来する部分を意味する。また、ある単位の構造を重合体形成後に化学的に変換したものも単位という。
「ペルフルオロアルキル基」とは、アルキル基の水素原子のすべてがフッ素原子に置換された基を意味する。
「ペルフルオロアルキレン基」とは、アルキレン基の水素原子のすべてがフッ素原子に置換された基を意味する。
「(メタ)アクリロイル基」とは、アクリロイル基およびメタクリロイル基の総称である。
「(メタ)アクリレート」とは、アクリレートおよびメタクリレートの総称である。
「体積固有抵抗」は、ASTM D257により測定される値である。
「絶縁破壊電圧」は、水銀フローバー(SSM社製、製品名:SSM-495)により測定される値である。
また、式(g11)で表される基を「基(g11)」とも記す。他の式で表される基についても同様に記す。
また、式(m1)で表される化合物を「化合物(m1)」とも記す。式(m1)で表される化合物が単量体である場合は、「単量体(m1)」とも記す。他の式で表される基についても同様に記す。
本発明の感光性樹脂組成物は、フッ素樹脂(A)と架橋剤(B)と光開始剤と溶媒(D)とを含む。
フッ素樹脂(A)は、重合性炭素-炭素二重結合を有し、フッ素原子含有率が47質量%以上であるフッ素樹脂である。フッ素樹脂(A)は、重合性炭素-炭素二重結合を有することより架橋性であり、架橋剤(B)と共に架橋して硬化しうる。なお、以下、「重合性炭素-炭素二重結合」を、特に他の二重結合であることに言及しない限り、単に「二重結合」ともいう。
フッ素樹脂(A)は、フッ素原子を有するため、形成される樹脂膜の誘電率および誘電損失が低くなりやすい。樹脂膜の誘電率および誘電損失が低いと、該樹脂膜を絶縁膜として有する有機半導体素子の多層配線間において信号伝播速度の遅延を抑制でき、電気特性に優れた有機半導体素子が得られる。フッ素原子を有することは、樹脂膜の吸水率が低くなる点でも好ましい。樹脂膜の吸水率が低いことは、該樹脂膜からなる絶縁膜に接合する電極およびその周辺の配線部分等における接合状態の変化を抑制できる点、または金属の変質(錆等)を抑制できる点で優れており、有機半導体素子の信頼性を高める。
フッ素樹脂(A)中の二重結合は、架橋構造を形成しやすい点から、フッ素樹脂(A)のペンダント基の一部として存在することが好ましい。
含フッ素重合体の具体例としては、含フッ素(メタ)アクリレート系重合体、含フッ素ビニル系重合体、主鎖に含フッ素脂肪族環構造を有する重合体、含フッ素ポリアリーレンプレポリマー、含フッ素フェノール樹脂オリゴマー、含フッ素ポリイミド等が挙げられる。
X11、X12、X21およびX22は、それぞれ独立に水素原子またはハロゲン原子である。反応性に優れる点から、水素原子が好ましい。
2価の連結基としては、酸素原子や窒素原子等を有する2価の各種結合からなる連結基、またはそのような各種結合と2価の炭化水素基とが連結した連結基が好ましい。
酸素原子や窒素原子等を有する2価の結合としては、たとえば、エーテル結合(-O-)、エステル結合(-C(O)O-)、アミド結合(-NHC(O)-)、ウレタン結合(-NHC(O)O-)、ウレア結合(-NHC(O)NH-)等が挙げられる。これら結合と連結した2価の炭化水素基としては、アルキレン基、シクロアルキレン基、アリーレン基等が挙げられ、特にアルキレン基が好ましい。
-C(O)O-R11- ・・・(g21)、
-C(O)O-R10-NHC(O)O-R11- ・・・(g22)、
-C(O)O-R10-CH(OH)CH2O-R11- ・・・(g23)、
-CH2-O-R11- ・・・(g24)。
ただし、R10およびR11は、それぞれ独立に炭素数1~6のアルキレン基である。また、これらの基の左側は共重合体の主鎖に結合し、右側はRf1に結合する。
-C(O)O-R21- ・・・(g31)、
-C(O)O-R20-NHC(O)O-R21- ・・・(g32)、
-C(O)O-R20-CH(OH)CH2O-R21- ・・・(g33)、
-CH2-O-R21- ・・・(g34)。
ただし、R20およびR21は、それぞれ独立に炭素数1~6のアルキレン基である。また、これらの基の左側は共重合体の主鎖に結合し、右側はRf2に結合する。
-C(O)O-CH2-、
-C(O)O-CH2CH2-、
-C(O)O-CH2CH2-NHC(O)O-CH2-、
-C(O)O-CH2CH2-NHC(O)O-CH2CH2-、
-CH2-O-CH2-、
-CH2-O-CH2-CH2-。
ただし、これらの基の左側は共重合体の主鎖に結合し、右側はRf1またはRf2に結合する。
-CF2CF2CF2CF3、
-CF2CF2CF2CF2CF2CF3、
-CF2CF2CF2CF(CF3)CF3、
-CF(CF3)OCF2CF2CF3、
-CF2OCF2CF2OCF3、
-CF2OCF2CF2OCF2CF3、
ペルフルオロアダマンチル基。
-CF2CF2-、
-CF2CF2CF2-、
-CF2CF2CF2CF2-、
-CF2CF2CF2CF2CF2CF2-、
-CF2CF2CF2CF2CF2CF2CF2CF2-、
-CF2OCF2CF2OCF2-、
-CF2OCF2CF2OCF2CF2OCF2-。
Z1は、2以上の二重結合を有していてもよいが、1つの二重結合を有することが好ましい。Z1の結合末端(Rf2に結合する末端)は炭素原子であり、結合末端の炭素原子は多価の炭化水素基の炭素原子であることが好ましい。多価の炭化水素基としては、2価の炭化水素基が好ましく、2価の炭化水素基としてはアルキレン基、シクロアルキレン基、アリーレン基等が挙げられる。炭化水素基と二重結合とは酸素原子や窒素原子等を有する各種結合によって結合され、各種結合としてはエーテル結合(-O-)、エステル結合(-C(O)O-)、アミド結合(-NHC(O)-)、ウレタン結合(-NHC(O)O-)、ウレア結合(-NHC(O)NH-)等が挙げられる。
Z1としては、炭素数1~6のアルキレン基と上記に示した結合と二重結合が連結した1価の有機基であることが好ましく、特にアクリロイルオキシアルキル基、および、ヒドロキシアルキル基にイソシアナートアルキルアクリレートが結合して形成する基、であることが好ましい。
-R22-OC(O)-CR23=CH2 ・・・(g41)、
-R22-OC(O)NH-R24-OC(O)-CR23=CH2 ・・・(g42)、
-R22-O-CH2-CH=CH2 ・・・(g43)、
-R22-O-CH=CH2 ・・・(g44)。
ただし、R22およびR24は、それぞれ独立に炭素数1~6のアルキレン基であり、R23は、水素原子またはメチル基である。
-CH2-OC(O)-CH=CH2、
-CH2-OC(O)-C(CH3)=CH2、
-CH2-OC(O)NH-CH2CH2-OC(O)-CH=CH2、
-CH2-OC(O)NH-CH2CH2-OC(O)-C(CH3)=CH2、
-CH2-O-CH2-CH=CH2、
-CH2-O-CH=CH2。
単位(u1)および単位(u21)以外の単位としては、たとえば、後述する単量体(m3)に由来する単位、未反応の後述する単位(u41)等が挙げられる。
含フッ素重合体(A1)は、たとえば、下記の工程(i)および工程(ii)を有する方法によって製造できる。
(i)重合開始剤の存在下、下式で表される単量体(m1)および単量体(m2)、必要に応じてそれら以外の単量体を含む単量体成分を重合して、下式で表される単位(u1)(単量体(m1)に由来する単位である。)および単位(u41)(単量体(m2)に由来する単位である。)を有する前駆体(P1)を得る工程。なお、単量体(m1)、単量体(m2)以外の単量体としては、後述の単量体(m3)が好ましい。
CX11X12=CR1-Q1-Rf1 ・・・(m1)、
CX21X22=CR2-Q2-Rf2-R22-OH ・・・(m2)。
工程(ii)において、単位(u41)中の水酸基のすべてを化合物(m4)と反応させなくてもよく、未反応の水酸基が残存してもよい。すなわち、含フッ素重合体(A1)は単位(u41)を有していてもよい。
単量体(m1)としては、Rf1を有する公知の(メタ)アクリレート類、ビニルエーテル類、ビニルエステル類、アリルエーテル類等が挙げられる。
CX11X12=CR1-C(O)-X13 ・・・(m11)、
CX11X12=CR1-C(O)O-R10-NCO ・・・(m12)、
CX11X12=CR1-CH2-X13 ・・・(m13)、
HO-R11-Rf1 ・・・(f1)。
ただし、X13は、塩素原子、臭素原子またはヨウ素原子である。R1、X11、X12、R10、R11およびRf1は、上述したとおりである。
CX21X22=CR2-C(O)-X23 ・・・(m21)、
CX21X22=CR2-C(O)O-R20-NCO ・・・(m22)、
CX21X22=CR2-C(O)O-R20-Ep ・・・(m23)、
CX21X22=CR2-CH2-X23 ・・・(m24)、
HO-R21-Rf2-R22-OH ・・・(f2)。
ただし、X23は、塩素原子、臭素原子またはヨウ素原子である。R2、X21、X22、R20、R21、R22およびRf2は、上述したとおりである。Epは、エポキシ基である。
具体的な化合物(m3)としては、たとえば、メチル(メタ)アクリレート、エチル(メタ)アクリレート、イソプロピル(メタ)アクリレート、イソブチル(メタ)アクリレート、tert-ブチル(メタ)アクリレート、ベヘニル(メタ)アクリレート、フェニル(メタ)アクリレート、イソオクチル(メタ)アクリレート、イソデシル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、ベンジルメタクリレート、スチレン、4-ヒドロキシスチレン、tert-ブチルビニルエーテル、シクロヘキシルビニルエーテル、1,1-ジクロロエチレン、1,1-ジフルオロエチレン等が挙げられる。
重合法としては、溶液重合法、塊状重合法、乳化重合法、懸濁重合法等が挙げられ、溶液重合法が好ましい。
溶液重合法に用いる溶媒としては、公知の溶媒が挙げられる。
Z1が基(g41)である場合は、下式で表される化合物(m41)のX24と、前駆体(P1)の単位(u41)中の水酸基とを塩基性化合物の存在下に反応させて単位(u1)および単位(u21)を有する含フッ素重合体(A1)を得る。
X24-C(O)-CR23=CH2 ・・・(m41)。
ただし、X24は、塩素原子、臭素原子またはヨウ素原子である。R23は、上述したとおりである。
OCN-R24-OC(O)-CR23=CH2 ・・・(m42)。
ただし、R23、R24は、上述したとおりである。
X24-CH2-CH=CH2 ・・・(m43)。
ただし、X24は、上述したとおりである。
R25-O-CH=CH2 ・・・(m44)
ただし、R25は1価のアルキル基である。
また、単位(u22)についても、含フッ素重合体(A1)の単位(u21)と同じ記号については、説明を省略する。
ただし、R31は、炭素数1~6のアルキレン基である。また、これらの基の左側は共重合体の主鎖に結合し、右側はZ2に結合する。
-C(O)O-CH2CH2-、
-CH2-。
ただし、これらの基の左側は共重合体の主鎖に結合し、右側はZ2に結合する。
Z2としては、たとえば、二重結合と、各種結合(エーテル結合(-O-)、エステル結合(-C(O)O-)、アミド結合(-NHC(O)-)、ウレタン結合(-NHC(O)O-)、ウレア結合(-NHC(O)NH-)等)と、アルキレン基との組み合わせ等が挙げられる。
-OC(O)-CR23=CH2 ・・・(g51)、
-OC(O)NH-R24-OC(O)-CR23=CH2 ・・・(g52)、
-O-CH2-CH=CH2 ・・・(g53)、
-O-CH=CH2 ・・・(g54)。
ただし、R23およびR24は、上述したとおりである。
-OC(O)-CH=CH2、
-OC(O)-C(CH3)=CH2、
-OC(O)NH-CH2CH2-OC(O)-CH=CH2、
-OC(O)NH-CH2CH2-OC(O)-C(CH3)=CH2。
単位(u1)および単位(u22)以外の単位としては、たとえば、上述した化合物(m3)に由来する単位、未反応の後述する単位(u42)等が挙げられる。
含フッ素重合体(A2)は、たとえば、下記の工程(i)および工程(ii)を有する方法によって製造できる。
(i)重合開始剤の存在下、下式で表される化合物(m1)および化合物(m5)、必要に応じてそれら以外の単量体を含む単量体成分を重合して、下式で表される単位(u1)(化合物(m1)に由来する単位である。)および単位(u42)(化合物(m5)に由来する単位である。)を有する前駆体(P2)を得る工程。なお、単量体(m1)、単量体(m5)以外の単量体としては、単量体(m3)が好ましい。
CX11X12=CR1-Q1-Rf1 ・・・(m1)、
CX21X22=CR2-Q3-OH ・・・(m5)。
化合物(m2)の代わりに化合物(m5)を用いる以外は、含フッ素重合体(A1)の製造方法における工程(i)と同様に行う。
Z2が基(g51)である場合は、上述した化合物(m41)のX24と、前駆体(P2)の単位(u42)中の水酸基とを塩基性化合物の存在下に反応させて単位(u1)および単位(u22)を有する含フッ素重合体(A2)を得る。
架橋剤(B)は、二重結合を有する化合物(ただし、前記フッ素樹脂(A)を除く。)である。フッ素樹脂(A)と架橋剤(B)とが反応することによって、硬度および耐溶剤性に優れる硬化膜が形成される。
含フッ素アルコールと(メタ)アクリル酸のエステルとしては、含フッ素アルコールのすべての水酸基が(メタ)アクリロイルオキシ基に置換したポリエステルが好ましく、(メタ)アクリロイルオキシ基としてはアクリロイルオキシ基が好ましい。
二重結合を有するイソシアネート化合物としては、(メタ)アクリロイルオキシ基を有するイソシアネート化合物が好ましく、(メタ)アクリロイルオキシ基としてはアクリロイルオキシ基が好ましい。(メタ)アクリロイルオキシ基を有するイソシアネート化合物は、1個または2個の(メタ)アクリロイルオキシ基と1個のイソシアナート基を有する化合物が好ましく、また、(メタ)アクリロイルオキシ基とイソシアナート基を除いた部分は炭化水素基であることが好ましい。炭化水素基としては脂肪族炭化水素基または脂環族炭化水素基が好ましい。具体的なアクリロイルオキシ基を有するイソシアネート化合物としては、2-イソシアナートエチルアクリレート、1,3-ビスアクリロイルオキシ-2-メチルプロパン-2-イソシアネート等が挙げられる。
架橋剤(B1)として使用できる具体的な化合物としては、たとえば、特開2013-181140号公報や特許第4879560号公報に記載された化合物が挙げられる。
化合物(B1-1):44.9質量%、
化合物(B1-2):32.3質量%、
化合物(B1-3):27.1質量%、
化合物(B1-4):20.5質量%。
光開始剤としては、光を吸収することによってラジカルを発生する光ラジカル重合開始剤が挙げられる。
光ラジカル重合開始剤の具体例としては、たとえば、下記のものが挙げられる。
オキシムエステル誘導体:1,2-オクタンジオン-1-[4-(フェニルチオ)-2-(o-ベンゾイルオキシム)](BASF社製、IRGACURE(登録商標)OXE01)、エタノン1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]-1-(o-アセチルオキシム)(BASF社製、IRGACURE(登録商標)OXE02)等。
α-アミノアルキルフェノン系化合物:BASF社製のIRGACURE(登録商標)
369、IRGACURE(登録商標)907等。
アシルホスフィンオキシド系化合物:DAROCUR(登録商標)TPO等。
溶媒(D)は、芳香環を有しない含フッ素化合物からなり、25℃において液状である溶媒である。溶媒であることより、溶媒(D)は、フッ素樹脂(A)、架橋剤(B)、光開始剤等の感光性樹脂組成物に含まれる成分と反応しない化合物である。
溶媒(D)は、芳香環を有しない、フッ素原子を有する有機化合物からなり、酸素原子、窒素原子、フッ素原子以外のハロゲン原子等の、炭素原子、フッ素原子以外の原子を有していてもよい。水素原子は、有していてもよく、有していなくてもよい。芳香環を有しない有機化合物としては、脂肪族炭化水素、脂環族炭化水素、非芳香族系アルコール類、非芳香族系エーテル類、非芳香族系アミン類等が挙げられ、溶媒(D)はこれら有機化合物の炭素原子に結合した水素原子の一部またはすべてがフッ素原子に置換された構造の含フッ素有機化合物が好ましい。また、フッ素原子の一部は塩素原子等のフッ素原子以外のハロゲン原子であってもよい。
溶媒(D)としては、たとえば、フッ素化デカリン、フッ素化シクロヘキサン、フッ素化ヘキサン、フッ素化オクタン、フッ素化デカン等の含フッ素脂肪族炭化水素化合物;フッ素化トリペンチルアミン、フッ素化トリブチルアミン、フッ素化トリプロピルアミン等の含フッ素アルキルアミン化合物;フッ素化プロパノール、フッ素化ペンタノール、フッ素化ヘプタノール、フッ素化オクタノール等の含フッ素アルコール化合物;フッ素化ブチルメチルエーテル、フッ素化ブチルエチルエーテル等の含フッ素脂肪族エーテル化合物;フッ素化2-ブチルテトラヒドロフラン等の含フッ素環状エーテル化合物;等が挙げられる。
また、溶媒(D)としては、フッ素原子の含有量の高い含フッ素化合物が好ましく、炭素原子に結合したフッ素原子と水素原子の合計数に対するフッ素原子の数の割合は50%以上が好ましく、65%以上がより好ましい。フッ素原子の数の割合は100%であってもよい。溶媒(D)としては、光開始剤等の非含フッ素原料の溶解性の点から、炭素原子に結合した水素原子を有する含フッ素化合物(すなわち、フッ素原子の数の割合が100%未満の含フッ素化合物)が好ましく、特に含フッ素アルコール化合物が好ましい。
1H-トリデカフルオロヘキサン(旭硝子社製、アサヒクリン(登録商標)AC2000、沸点:71℃)、
1,1,1,2,2,3,3,4,4,5,5,6,6-トリデカフルオロオクタン(旭硝子社製、アサヒクリン(登録商標)AC6000、沸点:115℃)、
1,1,2,2-テトラフルオロ-1-(2,2,2-トリフルオロエトキシ)エタン(旭硝子社製、アサヒクリン(登録商標)AE3000、沸点:56℃)、
1,1-ジクロロ-2,2,3,3,3-ペンタフルオロプロパンと1,3-ジクロロ-1,1,2,2,3-ペンタフルオロプロパンとの質量比45:55の混合物(旭硝子社製、アサヒクリン(登録商標)AK-225、沸点:54℃)、
サイトップ(登録商標)CT-solv100E(旭硝子社製、沸点:98℃)、
1-メトキシノナフルオロブタン(スリーエムジャパン社製、Novec(登録商標)7100、沸点:61℃)、
1-エトキシノナフルオロブタン(スリーエムジャパン社製、Novec(登録商標)7200、沸点:76℃)、
1,1,1,2,3,3-ヘキサフルオロ-4-(1,1,2,3,3,3-ヘキサフルオロプロポキシ)ペンタン(スリーエムジャパン社製、Novec(登録商標)7600、沸点:131℃)、
2H,3H-ペルフルオロペンタン(三井・デュポンフロロケミカル社製、Vertrel(登録商標)XF、沸点:55℃)、
3,3,4,4,5,5,6,6,7,7,8,8,8-トリデカフルオロ-1-オクタノール(沸点:80℃)、
4,4,5,5,6,6,7,7,8,8,9,9,9-トリデカフルオロ-1-ノナノール、
ヘキサフルオロイソプロパノール(沸点:59℃)、
2,2,3,3,4,4,5,5-オクタフルオロ-1-ペンタノール(沸点:140℃)、
1H,1H,7H-ドデカフルオロ-1-ヘプタノール(沸点:170℃)、
1H,1H,2H,2H-トリデカフルオロ-1-オクタノール(沸点:80℃)等。
溶媒(D)は、1種を単独で用いてもよく、2種以上を併用してもよい。
本発明の感光性樹脂組成物は、本発明の効果を損なわない範囲内において、前記以外の成分(以下、「他の成分」と記す。)を含んでもよい。
他の成分としては、たとえば、光増感剤、酸化防止剤、熱重合開始剤、熱重合防止剤、接着促進剤、レベリング剤、消泡剤、沈殿防止剤、分散剤、可塑剤、増粘剤等が挙げられる。
熱重合開始剤の具体例としては、アゾビスイソブチロニトリル、過酸化ベンゾイル、tert-ブチルヒドロペルオキシド、クメンヒドロペルオキシド、過酸化ジ-tert-ブチル、過酸化ジクミル等が挙げられる。分解温度の点から、アゾビスイソブチロニトリルまたは過酸化ベンゾイルが好ましい。
接着促進剤としては、たとえば、シラン系カップリング剤、チタネート系カップリング剤、アルミニウム系カップリング剤等が挙げられる。
本発明の感光性樹脂組成物の固形分濃度は、3~40質量%が好ましく、5~20質量%が特に好ましい。固形分濃度が前記範囲の下限値以上であれば、絶縁性を得るのに充分な膜厚の樹脂膜が得られる。固形分濃度が前記範囲の上限値以下であれば、溶液粘度が比較的低く、製膜性に優れる。
なお、本発明の感光性樹脂組成物の固形分濃度とは、加熱前の感光性樹脂組成物の質量と、120℃の対流式乾燥機にて4時間加熱した後の質量とから算出する値である。また、感光性樹脂組成物の濃度は、感光性樹脂組成物の仕込み量から算出可能である。
以上説明した本発明の感光性樹脂組成物にあっては、フッ素樹脂(A)のフッ素原子含有率が47質量%以上であるため、溶媒として溶媒(D)を用いても、フッ素樹脂(A)が溶媒に充分に溶解する。そのため、フッ素原子を含まない有機化合物からなる有機半導体層にダメージを与える芳香族系含フッ素溶媒を用いる必要がない。そして、溶媒(D)は、フッ素原子を含まない有機化合物に対する溶解性が極めて低いため、フッ素原子を含まない有機化合物からなる有機半導体層にダメージを与えない。したがって、本発明の感光性樹脂組成物は、絶縁膜を形成する際に有機半導体層にダメージを与えにくい。
また、同じ理由から、本発明の感光性樹脂組成物は、絶縁膜以外の樹脂膜(撥液膜等)を基材上に形成する際にも、基材にダメージを与えにくい。
本発明における樹脂膜は、本発明の感光性樹脂組成物を基材上に塗布し、溶媒(D)を除去して乾燥塗膜を形成し、その乾燥膜を露光して硬化させて得られた硬化膜である。
本発明の樹脂膜の製造方法は、本発明の感光性樹脂組成物を基材上に塗布し、溶媒(D)を除去して膜を形成し、その後露光することを特徴とする。
樹脂膜の製造方法は、後述する本発明の有機半導体素子の製造方法において、絶縁膜の形成方法として詳しく説明する。
本発明における樹脂膜にあっては、有機半導体層等の基材にダメージを与えにくい本発明の感光性樹脂組成物を基材上に塗布し、溶媒(D)を除去した後硬化させて形成しているため、フッ素樹脂(A)を含む樹脂膜を形成する際に有機半導体層等の基材にダメージを与えにくい。
本発明における有機半導体素子は、本発明の感光性樹脂組成物を有機半導体層上に塗布し、溶媒(D)を除去して乾燥塗膜を形成し、その後露光し硬化させて形成された硬化膜(樹脂膜)からなる絶縁膜を有するものである。なお、本発明の有機半導体素子の製造方法は後述する。
図1は、有機半導体素子の第1実施形態を示す断面図である。
有機半導体素子1は、ゲート電極10と、ゲート電極10上に形成されたゲート絶縁膜11と、ゲート絶縁膜11上に形成されたソース電極12およびドレイン電極13と、ゲート絶縁膜11上におけるソース電極12とドレイン電極13との間に形成された有機半導体層14と、ソース電極12、ドレイン電極13および有機半導体層14を覆うように形成された層間絶縁膜15と、を有する。
層間絶縁膜15には、層間絶縁膜15の上面からドレイン電極13まで到達するホール16が形成されている。
有機半導体素子1は、ボトムゲート・ボトムコンタクト型の素子である。
図2は、有機半導体素子の第2実施形態を示す断面図である。
有機半導体素子2は、基板21と、基板21上に形成された下地絶縁膜22と、下地絶縁膜22上に形成されたソース電極23およびドレイン電極24と、下地絶縁膜22上におけるソース電極23とドレイン電極24との間に形成された有機半導体層25と、ソース電極23、ドレイン電極24および有機半導体層25を覆うように形成されたゲート絶縁膜26と、ゲート絶縁膜26上に形成されたゲート電極27と、ゲート絶縁膜26上にゲート電極27を覆うように形成された層間絶縁膜28と、を有する。
ゲート絶縁膜26および層間絶縁膜28には、層間絶縁膜28の上面からドレイン電極24まで到達するホール29が形成されている。
有機半導体素子2は、トップゲート・ボトムコンタクト型の素子である。
図3は、有機半導体素子の第3実施形態を示す断面図である。
有機半導体素子3は、ゲート電極31と、ゲート電極31上に形成されたゲート絶縁膜32と、ゲート絶縁膜32上に形成された有機半導体層33と、ゲート絶縁膜32上において有機半導体層33を介して対向して形成されたソース電極34とドレイン電極35と、有機半導体層33上に形成された保護絶縁膜36と、ソース電極34、ドレイン電極35および保護絶縁膜36を覆うように形成された層間絶縁膜37と、を有する。
層間絶縁膜37には、層間絶縁膜37の上面からドレイン電極35まで到達するホール38が形成されている。
有機半導体素子3は、ボトムゲート・トップコンタクト型の素子である。
以上説明した本発明の有機半導体素子にあっては、有機半導体層にダメージを与えにくい本発明の感光性樹脂組成物を有機半導体層上に塗布し、溶媒(D)を除去し、その後露光して絶縁膜(図1の層間絶縁膜15、図2のゲート絶縁膜26、図3の保護絶縁膜36)を形成しているため、絶縁膜を形成する際に有機半導体層にダメージを与えることが抑制される。
本発明の有機半導体素子の製造方法は、本発明の感光性樹脂組成物を有機半導体層上に塗布し、溶媒(D)を除去して乾燥塗膜を形成し、その後露光して絶縁膜を形成する工程を有する方法であり、有機半導体層上に絶縁膜を形成する際に本発明の感光性樹脂組成物を用いる以外は公知の方法を採用できる。以下、本発明の有機半導体素子の製造方法の一例を示して説明する。
第1実施形態の有機半導体素子1の製造方法としては、たとえば、下記の工程(α1)~(α4)を有する方法が挙げられる。
(α1)ゲート電極10上にゲート絶縁膜11を形成する工程。
(α2)ゲート絶縁膜11上にソース電極12およびドレイン電極13を形成する工程。
(α3)ゲート絶縁膜11上におけるソース電極12とドレイン電極13との間に有機半導体層14を形成する工程。
(α4)本発明の感光性樹脂組成物をソース電極12、ドレイン電極13および有機半導体層14の上に塗布し、溶媒(D)を除去して乾燥塗膜を形成し、その後乾燥塗膜を露光して層間絶縁膜15を形成する工程。また、ホール16を有する層間絶縁膜15は、露光の際フォトリソグラフィ法により形成される。
低分子化合物としては、ペンタセン、ルブレン、フタロシアニン、ペリレン、フラーレンまたはこれらの誘導体、含硫黄化合物(下式で表される化合物(s-1)、化合物(s-2)等)等が挙げられる。
ポリマーとしては、ポリ-p-フェニレンビニレン、ポリフルオレン、フルオレン-ベンゾチアジアゾール共重合体、フルオレン-トリフェニルアミン共重合体、フルオレン-ジチオフェン共重合体、ポリチオフェン、ポリアニリン、ポリアセチレン、ポリピロールまたはこれらの誘導体等が挙げられる。
前駆体材料としては、シリルエチン置換ペンタセン、テトラビシクロポルフィリン誘導体等が挙げられる。これらの材料は、加熱によりペンタセン、テトラベンゾポルフィリン誘導体に変換できる。
本発明の感光性樹脂組成物をソース電極12、ドレイン電極13および有機半導体層14の上に塗布して未乾燥塗膜を形成し、溶媒(D)を除去して乾燥塗膜を形成し、その後露光して乾燥塗膜を硬化させて層間絶縁膜15を形成する。
本発明の感光性樹脂組成物の塗布方法としては、公知の湿式塗布法を用いることができる。未乾燥塗膜中の溶媒(D)を除去する方法としては、加熱、減圧、加熱と減圧を組み合わせた方法等が挙げられる。乾燥塗膜に欠陥が生じにくく、操作も簡便な点から、常圧での加熱が好ましい。加熱温度は、30~200℃が好ましく、40~150℃が特に好ましい。
具体的には、乾燥塗膜におけるホール16を形成する部分を除く部分を露光し、露光部分を硬化させる。その後、現像液によって現像して未露光部分を除去することによって、ホール16を有する層間絶縁膜15が形成される。
露光には、光開始剤等によって吸収される波長を含むX線、紫外線、可視光線等を用いることができる。露光に用いる光源としては、紫外線または可視光線を出射できる光源が好ましく、超高圧水銀アークが特に好ましい。
線量は、層間絶縁膜15の厚さおよび光開始剤等の種類に応じて設定される。たとえば、層間絶縁膜15の厚さが10μmの場合、線量は100~2,000mJ/cm2が好ましい。
現像に用いる現像液としては、露光部の樹脂が不溶または極僅かだけ可溶であり、未露光部の樹脂が可溶な溶媒を用いる。現像液としては、含フッ素溶媒が好ましく、溶媒(D)と同じものが特に好ましい。
現像後によって未露光部の樹脂が溶解した後、必要に応じて、リンス液でリンスを行い、乾燥するために高速でスピン(回転)させる。
リンス液としては、現像液と同様のもの、または現像液ほどは未露光部の樹脂の溶解性が高くなく、また、現像液と相溶性のあるものであれば特に制限がない。
第2実施形態の有機半導体素子2の製造方法としては、たとえば、下記の工程(β1)~(β6)を有する方法が挙げられる。
(β1)基板21上に下地絶縁膜22を形成する工程。
(β2)下地絶縁膜22上にソース電極23およびドレイン電極24を形成する工程。
(β3)下地絶縁膜22上におけるソース電極23とドレイン電極24との間に有機半導体層25を形成する工程。
(β4)本発明の感光性樹脂組成物をソース電極23、ドレイン電極24および有機半導体層25の上に塗布し、溶媒(D)を除去して乾燥塗膜を形成し、その後乾燥塗膜を露光してゲート絶縁膜26を形成する工程。また、ホール29を有するゲート絶縁膜15は、露光の際フォトリソグラフィ法により形成される。
(β5)ゲート絶縁膜26上にゲート電極27を形成する工程。
(β6)ゲート絶縁膜26上に、ゲート電極27を覆うように層間絶縁膜28を形成する工程。層間絶縁膜28の形成方法は、前記の工程(α1)~(α4)を有する方法が挙げられる。
本発明の感光性樹脂組成物をソース電極23、ドレイン電極24および有機半導体層25の上に塗布して未乾燥塗膜を形成し、溶媒(D)を除去して乾燥塗膜を形成し、その後露光して乾燥塗膜を硬化させてゲート絶縁膜26を形成する。
本発明の感光性樹脂組成物の塗布方法、および未乾燥塗膜中の溶媒(D)の除去方法としては、第1実施形態の工程(α4)と同様の方法が挙げられる。
第3実施形態の有機半導体素子3の製造方法としては、たとえば、下記の工程(γ1)~(γ5)を有する方法が挙げられる。
(γ1)ゲート電極31上にゲート絶縁膜32を形成する工程。
(γ2)ゲート絶縁膜32上に有機半導体層33を形成する工程。
(γ3)ゲート絶縁膜32上において、有機半導体層33を介して対向するようにソース電極34およびドレイン電極35を形成する工程。
(γ4)本発明の感光性樹脂組成物を有機半導体層33の上に塗布し、溶媒(D)を除去して乾燥塗膜を形成し、その後乾燥塗膜を露光して保護絶縁膜36を形成する工程。
(γ5)ソース電極34、ドレイン電極35および有機半導体層33の上に層間絶縁膜37を形成する工程。層間絶縁膜37の形成方法は、前記の工程(α1)~(α4)を有する方法が挙げられる。ホール38を有する層間絶縁膜37は、露光の際フォトリソグラフィにより形成される。
本発明の感光性樹脂組成物を、有機半導体層33におけるソース電極34およびドレイン電極35に覆われていない部分を覆うように塗布して未乾燥塗膜を形成し、溶媒(D)を除去して乾燥塗膜を形成し、その後乾燥塗膜を露光し硬化させて保護絶縁膜36を形成する。
本発明の感光性樹脂組成物の塗布方法、および未乾燥塗膜中の溶媒(D)の除去方法としては、第1実施形態の工程(α4)と同様の方法が挙げられる。
以上、第1~3実施形態を示して本発明の有機半導体素子の製造方法を示したが、本発明の有機半導体素子の製造方法は、これらの実施形態には限定されない。
たとえば、第1~3実施形態で示した有機半導体素子1~3は、有機半導体素子の製造方法で製造できるものの一例であり、有機半導体層上に形成する絶縁膜を本発明の感光性樹脂組成物で形成する方法であれば、それ以外の態様は特に限定されない。具体的には、本発明の有機半導体素子の製造方法は、トップゲート・トップコンタクト型の有機半導体素子を製造する方法であってもよい。
例1~14は製造例であり、例15~21、25~37は実施例であり、例22は参考例であり、例23、24、38~40は比較例である。
V65:2,2’-アゾビス(2,4-ジメチルバレロニトリル)(和光純薬工業社製、V-65)。
OXE01:1,2-オクタンジオン-1-[4-(フェニルチオ)-2-(o-ベンゾイルオキシム)](BASF社製、IRGACURE(登録商標)OXE01)、
OXE02:エタノン1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]-1-(o-アセチルオキシム)(BASF社製、IRGACURE(登録商標)OXE02)。
OFPO:1H,1H,5H-オクタフルオロペンタノール、
C6エタノール(C6Et):1H,1H,2H,2H-トリデカフルオロ-1-オクタノール。
HFB:ヘキサフルオロベンゼン、
Novec7200:1-エトキシノナフルオロブタン(スリーエムジャパン社製、Novec(登録商標)7200)、
AK-225:1,1-ジクロロ-2,2,3,3,3-ペンタフルオロプロパンと1,3-ジクロロ-1,1,2,2,3-ペンタフルオロプロパンとの質量比45:55の混合物(旭硝子社製、アサヒクリン(登録商標)AK-225)。
(1H-NMR)
化合物の1H-NMRスペクトルは、FT-NMR装置(日本電子社製、JNM-AL300)を用いて測定した。
フッ素樹脂または架橋剤の質量平均分子量(Mw)は、高速ゲルパーミエーションクロマトグラフィ(GPC)装置(東ソー社製、HLC-8220)によって得られたクロマトグラムから、分子量既知の標準ポリメチルメタクリレート試料を用いて作成した検量線を用いて求めた。
感光性樹脂組成物における固形分の溶け残りの有無を目視で確認した。固形分の溶け残りがなかったものを可溶、溶け残りがあったものを不溶と判定した。
6インチシリコンウェハ(三菱マテリアルトレーディング社製)の表面に感光性樹脂組成物を、1,000回転/分で30秒間スピンコートし、ホットプレートを用い、60℃で60秒間加熱して乾燥塗膜を形成した。光源として高圧水銀ランプを用い、露光エネルギーが1J/cm2となるように乾燥塗膜を露光して、乾燥塗膜を硬化させた。乾燥塗膜の硬化を促進するために、窒素雰囲気下160℃で30分間焼成し、硬化膜を形成した。硬化膜の平坦性を、サーフコーダ(小坂研究所社製、ET4000)を用いて、JIS B0601:2001に記載の算術表面粗さ(Ra)を求めた。
6インチシリコンウェハ(三菱マテリアルトレーディング社製)の表面に感光性樹脂組成物を、1,000回転/分で30秒間スピンコートし、ホットプレートを用い、60℃で60秒間加熱して乾燥塗膜を形成した。光源として高圧水銀ランプを用い、マスク(一辺が10μmから60μmまで10μmずつ変化させた正方形のホールパターンを形成できるマスク)を介して、露光エネルギーが600mJ/cm2となるように乾燥塗膜を露光して、乾燥塗膜の一部(露光部)を硬化させた。乾燥塗膜の硬化を促進するために、ホットプレートを用い、100℃で90秒間加熱した。
硬化膜に対し、現像液としてOFPOを用いて、ディップ現像を30秒間行い、マスクに対応するホールパターンを有する硬化膜を形成した。現像液およびリンス液を除去するために、2,000回転/分で30秒間スピンドライを行った。現像により除去されなかった部分の硬化膜の厚さは0.6μmであった。
硬化膜を顕微鏡(KEYENCE社製、VHX DIGITAL MICROSCOPE)で観察し、ホールが開口した最小のパターン径を解像度とした。
図4(a)に示すように、厚さ100nmのSiO2薄膜(ゲート絶縁膜102、誘電率:3.9)が表面に形成された不純物添加Si基板(ゲート電極101)(菱光産業社製)の表面を、トリメトキシ(2-フェニルエチル)シランで処理し、自己組織化単分子膜(SAM膜103)を形成して積層体104を得た。
ゲート電極101に+20Vから-30Vまで電圧を変化させて印加し、さらにソース電極106とドレイン電極107との間に-30Vの電圧を印加し、ソース電極106とドレイン電極107との間に流れる電流値を半導体デバイスアナライザー(アジレントテクノロジー社製)を用いて測定した。得られたオン電流(ドレイン電流)の平方根およびゲート電圧をグラフにプロットし、その傾きからキャリア移動度μ1を求めた。
層間絶縁膜を形成した後の有機半導体素子100について、層間絶縁膜を形成する前の有機半導体素子100と同様にしてキャリア移動度μ2を求めた。
キャリア移動度の低下率Δμ(%)を、下式から求め、これを素子特性とした。
Δμ={(μ2-μ1)/μ1}×100
1H-NMR(300.4MHz、溶媒:CDCl3、基準:TMS)δ(ppm):2.0(s、3H)、4.5(t、2H)、5.7(s、1H)、6.2(s、1H)。
1H-NMR(300.4MHz、溶媒:HFB、基準:TMS)δ(ppm):2.0(s、3H)、5.1(s、2H)、5.7(s、1H)、6.2(s、1H)。
1H-NMR(300.4MHz、溶媒:d-アセトン、基準:TMS)δ(ppm):2.0(s、3H)、4.1(t、2H)、4.9(t、2H)、5.8(s、1H)、6.2(s、1H)。
1H-NMR(300.4MHz、溶媒:d-アセトン、基準:TMS)δ(ppm):2.0(s、3H)、4.0(t、2H)、4.8(t、2H)、5.8(s、1H)、6.2(s、1H)。
前駆体(P1-1)の製造:
化合物(m1-1)の2.7g、化合物(m2-1)の0.3g、V65の0.026gをNovec7200の27gに溶解し、窒素置換した後、50℃で24時間振とうした。反応液をヘキサンの500mLに加え、析出した固体を孔径3μmのポリテトラフルオロエチレン(以下、「PTFE」とも記す。)フィルタでろ過し、単位(u1-1)/単位(u41-1)=9/1(質量比)、質量平均分子量(Mw)82,000の共重合体(前駆体(P1-1))を得た。
1H-NMR(300.4MHz、溶媒:ヘキサフルオロベンゼン、基準:ヘキサフルオロキシレン(8.0))δ(ppm):3.0(br、9H)、4.5(br、1H)、4.8(br、10H)。
表1の製造条件に変更した以外は例5と同様にして、前駆体を製造した。各前駆体の1H-NMR(300.4MHz、溶媒:ヘキサフルオロベンゼン、基準:ヘキサフルオロキシレン(8.0))結果を以下に示す。なお1H-NMRの測定条件が異なるものについては条件も合わせて示す。
前駆体(P1-2) δ(ppm):3.0(br、9H)、4.5(br、1H)、4.8(br、10H)。
前駆体(P1-3) δ(ppm):2.9(br、7H)、4.4(br、3H)、4.7(br、10H)。
前駆体(P1-4) δ(ppm):2.9(br、9H)、4.3(br、1H)、4.7(br、10H)。
前駆体(P1-5) δ(ppm):2.9(br、7H)、4.3(br、3H)、4.7(br、10H)。
前駆体(P1-6) δ(ppm):4.4(br、1H)、4.7(br、10H)。
前駆体(P1-7) δ(ppm):4.4(br、3H)、4.8(br、10H)。
前駆体(P2-8) δ(ppm):4.4(br、3H)、4.8(br、10H)。
前駆体(P1-9) 1H-NMR(300.4MHz、溶媒:d-アセトン、基準:TMS)δ(ppm):2.7(br、3H)、4.1(br、7H)、4.3(br、3H)4.7(br、7H)。
前駆体(P1-10) 1H-NMR(300.4MHz、溶媒:d-アセトン、基準:TMS)δ(ppm):4.1(br、3H)、4.6(br、10H)。
フッ素樹脂(A1-1)の製造:
前駆体(P1-1)の1.5g、ジラウリル酸ジブチル錫の0.2mg、ベンゾヒドロキシトルエンの2.45mgをNovec7200の13.5gに溶解し、化合物(m42-1)の0.05gを加え、40℃で24時間振とうした。反応液をヘキサンの300mLに加え、析出した固体を孔径3μmのPTFEフィルタでろ過し、単位(u1-1)と単位(u21-1)とを有するフッ素樹脂(A1-1)を得た。結果を表2に示す。
1H-NMR(300.4MHz、溶媒:ヘキサフルオロベンゼン、基準:ヘキサフルオロキシレン(8.0))δ(ppm):2.9(br、8H)、3.8(br、1H)、4.3(br、2H)、4.7(br、10H)、5.8~6.5(m、2H)。
表2の製造条件に変更した以外は例15と同様にして、フッ素樹脂を製造した。結果を表2に示す。各フッ素樹脂の1H-NMR(300.4MHz、溶媒:ヘキサフルオロベンゼン、基準:ヘキサフルオロキシレン(8.0))結果を以下に示す。なお1H-NMRの測定条件が異なるものについては条件も合わせて示す。
フッ素樹脂(A1-2) δ(ppm):2.9(br、9H)、3.8(br、1H)、4.3(br、2H)、4.7(br、10H)、5.8~6.5(m、2H)。
フッ素樹脂(A1-3) δ(ppm):2.9(br、7H)、3.8(br、2H)、4.3(br、3H)、4.7(br、10H)、5.8~6.5(m、2H)。
フッ素樹脂(A1-4) δ(ppm):2.9(br、9H)、3.8(br、1H)、4.3(br、1H)、4.7(br、10H)、5.8~6.5(m、2H)。
フッ素樹脂(A1-5) δ(ppm):2.9(br、7H)、3.8(br、2H)、4.3(br、1H)、4.5(br、2H)4.7(br、10H)、5.8~6.5(m、4H)。
フッ素樹脂(A1-6) δ(ppm):3.6(br、1H)、3.8(br、1H)、4.3(br、2H)、4.5(br、2H)4.8(br、10H)、6.1~6.6(m、1H)。
フッ素樹脂(A1-7) δ(ppm):3.7(br、2H)、4.4(br、2H)、4.9(br、9H)5.2(br、10H)、6.1~6.6(m、5H)。
フッ素樹脂(A2-8) δ(ppm):2.9(br、9H)、3.7(br、1H)、4.5(br、3H)、4.7(br、10H)、6.1~6.6(m、2H)。
フッ素樹脂(X-9) 1H-NMR(300.4MHz、溶媒:d-アセトン、基準:TMS)δ(ppm):2.7(br、4H)、3.4(q、6H)、4.1(m、15H)、4.3(br、3H)、4.7(br、10H)5.2(br、10H)、5.9~6.4(m、10H)。
フッ素樹脂(X-10) δ(ppm):3.6(q、1H)、3.8(m、1H)、4.4(br、4H)、4.8(br、10H)、6.1~6.7(m、1H)。
フッ素樹脂(A1-1)の0.30g、化合物(B1-3)の0.20g、OXE02の0.05g、OFPOの4.25gをガラスバイアル(20mL)に入れ、充分に撹拌し、均一の溶液とした。得られた溶液を孔径0.20μmのPTFEフィルタでろ過して、感光性樹脂組成物を調製した。該感光性樹脂組成物を用いて各評価を行った。結果を表3に示す。
各成分の種類およびまたは配合量を変更した以外は、例25と同様にして例26~40の感光性樹脂組成物を調製した。該感光性樹脂組成物を用いて各評価を行った。結果を表3に示す。
特に、例25~29、31~36においては、特定の構造を有する含フッ素重合体(A1)およびフッ素原子含有率が20質量%以上である架橋剤(B1)を用いたため、平坦性にも優れていた。
例38においては、フッ素樹脂(A)を用いたものの、芳香族系含フッ素溶媒を用いたため、素子特性が劣っていた。
例39、40においては、フッ素原子含有率が47質量%未満であるフッ素樹脂(X)を用いたため、溶媒(D)への溶解性が劣っていた。
本発明の有機半導体素子の製造方法によれば、製造工程での有機半導体層のダメージを抑制でき、優れた特性の有機半導体素子が得られる。該有機半導体素子は、有機薄膜トランジスタ(TFT)素子、電界効果トランジスタ(FET)素子等として、液晶テレビ、有機ELテレビ、電子ペーパー、RF-ID等の電子機器に使用できる。
なお、2015年2月5日に出願された日本特許出願2015-021586号の明細書、特許請求の範囲、要約書および図面の全内容をここに引用し、本発明の明細書の開示として、取り入れるものである。
Claims (12)
- 下記フッ素樹脂(A)と下記架橋剤(B)と光開始剤と下記溶媒(D)とを含むことを特徴とする感光性樹脂組成物。
フッ素樹脂(A):重合性炭素-炭素二重結合を有し、フッ素原子含有率が47質量%以上であるフッ素樹脂。
架橋剤(B):重合性炭素-炭素二重結合を有する架橋剤(ただし、前記フッ素樹脂(A)を除く。)。
溶媒(D):芳香環を有しない含フッ素化合物からなり、25℃において液状である溶媒。 - 前記フッ素樹脂(A)が、下式(u1)で表される単位および下式(u21)で表される単位を有する共重合体からなる、請求項1に記載の感光性樹脂組成物。
R1およびR2は、それぞれ独立に水素原子、メチル基、エチル基またはハロゲン原子であり、
X11、X12、X21およびX22は、それぞれ独立に水素原子またはハロゲン原子であり、
Q1およびQ2は、それぞれ独立に2価の連結基であり、
Rf1は、炭素数1~10のペルフルオロアルキル基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキル基であり、
Rf2は、炭素数1~10のペルフルオロアルキレン基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキレン基であり、
Z1は、重合性炭素-炭素二重結合を有する1価の有機基である。 - 前記架橋剤(B)が、フッ素原子含有率が20質量%以上の、フッ素原子を有する架橋剤である、請求項1または2に記載の感光性樹脂組成物。
- 前記感光性樹脂組成物中の固形分濃度が、3~40質量%である、請求項1~3のいずれか一項に記載の感光性樹脂組成物。
- 前記フッ素樹脂(A)および前記架橋剤(B)の合計(100質量%)のうち、前記フッ素樹脂(A)の割合が60~90質量%であり、前記架橋剤(B)の割合が10~40質量%である、請求項1~4のいずれか一項に記載の感光性樹脂組成物。
- 前記溶媒(D)が、含フッ素脂肪族炭化水素化合物、含フッ素アルキルアミン化合物、含フッ素アルコール化合物、含フッ素脂肪族エーテル化合物または含フッ素環状エーテル化合物である、請求項1~5のいずれか一項に記載の感光性樹脂組成物。
- 前記溶媒(D)の沸点が、80℃以上である、請求項1~6のいずれか一項に記載の感光性樹脂組成物。
- 有機半導体層上に絶縁膜を形成するための絶縁膜形成用組成物である、請求項1~7のいずれか一項に記載の感光性樹脂組成物。
- 請求項1~8のいずれか一項に記載の感光性樹脂組成物を基材上に塗布し、前記溶媒(D)を除去して膜を形成し、その後露光することを特徴とする樹脂膜の製造方法。
- 請求項1~8のいずれか一項に記載の感光性樹脂組成物を有機半導体層上に塗布し、前記溶媒(D)を除去し、その後露光して絶縁膜を形成する工程を有することを特徴とする有機半導体素子の製造方法。
- 下式(u1)で表される単位および下式(u21)で表される単位を有し、フッ素原子含有率が47質量%以上である、含フッ素重合体。
R1およびR2は、それぞれ独立に水素原子、メチル基、エチル基またはハロゲン原子であり、
X11、X12、X21およびX22は、それぞれ独立に水素原子またはハロゲン原子であり、
Q1およびQ2は、それぞれ独立に2価の連結基であり、
Rf1は、炭素数1~10のペルフルオロアルキル基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキル基であり、
Rf2は、炭素数1~10のペルフルオロアルキレン基、または炭素-炭素原子間にエーテル性酸素原子を有する炭素数2~10のペルフルオロアルキレン基であり、
Z1は、重合性炭素-炭素二重結合を有する1価の有機基である。
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