Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/10—Measuring as part of the manufacturing process
  • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
  • G01N21/9501—Semiconductor wafers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
  • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
  • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Definitions

• Figure 2 is a flow chart illustrating a volumetric inspection process in accordance with one embodiment of the present invention.
• the patch processors may receive intensity values or an image that corresponds to at least a portion or patch of the wafer.
• the patch processors may each also be coupled to or integrated with one or more memory devices (not shown), such as DRAM devices that provide local memory functions, such as holding the received data portion.
• the memory is large enough to hold data that corresponds to a patch of the wafer.
• a patch may be 512 by 1024 pixels.
• the patch processors may also share memory.
• Each set of input data 702 may correspond to a swath of the wafer.
• One or more sets of data may be stored in memory of the data distribution system.

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• Engineering & Computer Science (AREA)
• Biochemistry (AREA)
• Immunology (AREA)
• Physics & Mathematics (AREA)
• Health & Medical Sciences (AREA)
• Life Sciences & Earth Sciences (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Pathology (AREA)
• General Physics & Mathematics (AREA)
• General Health & Medical Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Signal Processing (AREA)
• Computer Vision & Pattern Recognition (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)

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Publications (1)

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Citations (5)

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• 2016
  • 2016-01-19 US US15/001,158 patent/US9816940B2/en active Active
  • 2016-01-20 DE DE112016000419.2T patent/DE112016000419B4/de active Active
  • 2016-01-20 KR KR1020177022502A patent/KR102326402B1/ko active Active
  • 2016-01-20 WO PCT/US2016/014167 patent/WO2016118651A1/en not_active Ceased
  • 2016-01-20 CN CN201680006491.8A patent/CN107209125B/zh active Active
  • 2016-01-20 JP JP2017538344A patent/JP6769971B2/ja active Active
  • 2016-01-21 TW TW105101920A patent/TWI672497B/zh active
• 2017
  • 2017-07-10 IL IL253384A patent/IL253384B/en active IP Right Grant

Patent Citations (5)

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