TWI672497B - 用於偵測一半導體樣本上之缺陷之方法及檢查系統 - Google Patents

用於偵測一半導體樣本上之缺陷之方法及檢查系統 Download PDF

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Publication number
TWI672497B
TWI672497B TW105101920A TW105101920A TWI672497B TW I672497 B TWI672497 B TW I672497B TW 105101920 A TW105101920 A TW 105101920A TW 105101920 A TW105101920 A TW 105101920A TW I672497 B TWI672497 B TW I672497B
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Taiwan
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focus
image
different
data
intensity data
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TW105101920A
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Chinese (zh)
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TW201632873A (zh
Inventor
葛瑞斯Ｈ 陳
凱斯 巴克利 威爾斯
馬庫斯Ｂ 胡柏爾
吳世百
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美商克萊譚克公司
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Publication of TW201632873A publication Critical patent/TW201632873A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW105101920A 2015-01-21 2016-01-21 用於偵測一半導體樣本上之缺陷之方法及檢查系統 TWI672497B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562105979P 2015-01-21 2015-01-21
US62/105,979 2015-01-21
US15/001,158 US9816940B2 (en) 2015-01-21 2016-01-19 Wafer inspection with focus volumetric method
US15/001,158 2016-01-19

Publications (2)

Publication Number Publication Date
TW201632873A TW201632873A (zh) 2016-09-16
TWI672497B true TWI672497B (zh) 2019-09-21

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TW105101920A TWI672497B (zh) 2015-01-21 2016-01-21 用於偵測一半導體樣本上之缺陷之方法及檢查系統

Country Status (8)

Country Link
US (1) US9816940B2 (enExample)
JP (1) JP6769971B2 (enExample)
KR (1) KR102326402B1 (enExample)
CN (1) CN107209125B (enExample)
DE (1) DE112016000419B4 (enExample)
IL (1) IL253384B (enExample)
TW (1) TWI672497B (enExample)
WO (1) WO2016118651A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9916965B2 (en) 2015-12-31 2018-03-13 Kla-Tencor Corp. Hybrid inspectors
US10887580B2 (en) 2016-10-07 2021-01-05 Kla-Tencor Corporation Three-dimensional imaging for semiconductor wafer inspection
US11047806B2 (en) 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
KR102429614B1 (ko) * 2017-06-08 2022-08-04 삼성전자주식회사 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법
US10957033B2 (en) * 2017-07-10 2021-03-23 Kla-Tencor Corporation Repeater defect detection
US11222799B2 (en) 2017-10-18 2022-01-11 Kla Corporation Swath selection for semiconductor inspection
US10599951B2 (en) 2018-03-28 2020-03-24 Kla-Tencor Corp. Training a neural network for defect detection in low resolution images
KR102738153B1 (ko) * 2018-06-04 2024-12-05 에이에스엠엘 네델란즈 비.브이. 패터닝 공정을 위한 공정 모델을 개선하는 방법
US10846845B2 (en) * 2018-07-25 2020-11-24 Fei Company Training an artificial neural network using simulated specimen images
US10957035B2 (en) * 2018-11-30 2021-03-23 Kla Corporation Defect classification by fitting optical signals to a point-spread function
US11379967B2 (en) * 2019-01-18 2022-07-05 Kla Corporation Methods and systems for inspection of semiconductor structures with automatically generated defect features
KR102418198B1 (ko) * 2019-05-15 2022-07-07 전상구 기판 상의 패턴을 측정하는 시스템들 및 방법들
TWI755755B (zh) * 2019-06-17 2022-02-21 邦睿生技股份有限公司 用於測試生物樣本的裝置
JP7451227B2 (ja) * 2020-02-28 2024-03-18 日東電工株式会社 光透過性積層体の検査方法
CN112881419B (zh) * 2021-05-06 2024-01-30 高视科技(苏州)股份有限公司 芯片检测方法、电子设备及存储介质
JP7596234B2 (ja) * 2021-08-25 2024-12-09 日東電工株式会社 光透過性積層体の検査方法および検査装置
TWI792582B (zh) * 2021-09-27 2023-02-11 海華科技股份有限公司 鏡頭對焦系統、鏡頭對焦方法以及圖表顯示結構
CN119624841B (zh) * 2025-02-11 2025-05-30 西安高商智能科技有限责任公司 基于图像处理的电阻阵列红外景象图像的图像增强方法
CN121007907A (zh) * 2025-10-27 2025-11-25 季华实验室 芯片多层aoi检测设备和芯片多层aoi检测设备的检测方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201100779A (en) * 2009-01-13 2011-01-01 Semiconductor Technologies & Instr Pte Ltd System and method for inspecting a wafer (3)
TW201113967A (en) * 2009-01-13 2011-04-16 Semiconductor Technologies & Instr Pte Ltd System and method for inspecting a wafer (1)
US20130194569A1 (en) * 2010-10-14 2013-08-01 Koh Young Technology Inc. Substrate inspection method
US8755041B2 (en) * 2006-07-14 2014-06-17 Hitachi High-Technologies Corporation Defect inspection method and apparatus

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818110A (en) * 1986-05-06 1989-04-04 Kla Instruments Corporation Method and apparatus of using a two beam interference microscope for inspection of integrated circuits and the like
JPH04142055A (ja) * 1990-10-01 1992-05-15 Nec Yamagata Ltd 半導体ウェーハの外観検査装置
US5438413A (en) * 1993-03-03 1995-08-01 Kla Instruments Corporation Process for measuring overlay misregistration during semiconductor wafer fabrication
EP1190372A1 (en) 1999-06-01 2002-03-27 Greenvision Systems Ltd Method for in-situ focus-fusion multi-layer spectral imaging and analysis of particulate samples
US7170075B2 (en) 2002-07-18 2007-01-30 Rudolph Technologies, Inc. Inspection tool with a 3D point sensor to develop a focus map
JP2004198199A (ja) * 2002-12-17 2004-07-15 Hitachi High-Technologies Corp 欠陥検査装置
US7302360B2 (en) 2003-10-24 2007-11-27 Ade Corporation Defect size projection
US7551272B2 (en) 2005-11-09 2009-06-23 Aceris 3D Inspection Inc. Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object
JP4723362B2 (ja) 2005-11-29 2011-07-13 株式会社日立ハイテクノロジーズ 光学式検査装置及びその方法
US7659973B2 (en) 2006-05-26 2010-02-09 Applied Materials Southeast Asia, Pte Ltd. Wafer inspection using short-pulsed continuous broadband illumination
US7904845B2 (en) 2006-12-06 2011-03-08 Kla-Tencor Corp. Determining locations on a wafer to be reviewed during defect review
US8073240B2 (en) 2007-05-07 2011-12-06 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for identifying one or more optical modes of an inspection system as candidates for use in inspection of a layer of a wafer
JP5178079B2 (ja) * 2007-07-23 2013-04-10 株式会社日立ハイテクノロジーズ 欠陥検査方法およびその装置
JP2009288162A (ja) * 2008-05-30 2009-12-10 Hitachi Kokusai Electric Inc ３次元測定装置
JP6185693B2 (ja) 2008-06-11 2017-08-23 ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法
JP2010097419A (ja) * 2008-10-16 2010-04-30 Toshiba Plant Systems & Services Corp 三次元データ処理装置、三次元データ処理プログラム、および三次元データ処理方法
US8605275B2 (en) 2009-01-26 2013-12-10 Kla-Tencor Corp. Detecting defects on a wafer
EP2394295A2 (en) 2009-02-06 2011-12-14 KLA-Tencor Corporation Selecting one or more parameters for inspection of a wafer
DE102010025033B4 (de) 2010-06-23 2021-02-11 Carl Zeiss Smt Gmbh Verfahren zur Defekterkennung und Reparatur von EUV-Masken
US8810646B2 (en) 2010-10-12 2014-08-19 Kla-Tencor Corporation Focus offset contamination inspection
DE112011104658B4 (de) * 2010-12-29 2020-06-18 Koh Young Technology Inc. Verfahren zum Prüfen eines Substrats
US20120316855A1 (en) 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
US9595091B2 (en) * 2012-04-19 2017-03-14 Applied Materials Israel, Ltd. Defect classification using topographical attributes
US9454072B2 (en) 2012-11-09 2016-09-27 Kla-Tencor Corporation Method and system for providing a target design displaying high sensitivity to scanner focus change
US9390494B2 (en) 2012-12-13 2016-07-12 Kla-Tencor Corporation Delta die intensity map measurement
US9176074B2 (en) 2013-01-28 2015-11-03 Kabushiki Kaisha Toshiba Pattern inspection method and pattern inspection apparatus
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9091935B2 (en) 2013-03-11 2015-07-28 Kla-Tencor Corporation Multistage extreme ultra-violet mask qualification

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8755041B2 (en) * 2006-07-14 2014-06-17 Hitachi High-Technologies Corporation Defect inspection method and apparatus
TW201100779A (en) * 2009-01-13 2011-01-01 Semiconductor Technologies & Instr Pte Ltd System and method for inspecting a wafer (3)
TW201113967A (en) * 2009-01-13 2011-04-16 Semiconductor Technologies & Instr Pte Ltd System and method for inspecting a wafer (1)
US20130194569A1 (en) * 2010-10-14 2013-08-01 Koh Young Technology Inc. Substrate inspection method

Also Published As

Publication number Publication date
IL253384B (en) 2020-11-30
CN107209125A (zh) 2017-09-26
CN107209125B (zh) 2018-10-19
US9816940B2 (en) 2017-11-14
WO2016118651A1 (en) 2016-07-28
KR102326402B1 (ko) 2021-11-16
TW201632873A (zh) 2016-09-16
JP6769971B2 (ja) 2020-10-14
DE112016000419B4 (de) 2023-10-05
US20160209334A1 (en) 2016-07-21
DE112016000419T5 (de) 2017-11-23
IL253384A0 (en) 2017-09-28
JP2018509752A (ja) 2018-04-05
KR20170102012A (ko) 2017-09-06

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