TWI672497B - 用於偵測一半導體樣本上之缺陷之方法及檢查系統 - Google Patents
用於偵測一半導體樣本上之缺陷之方法及檢查系統 Download PDFInfo
- Publication number
- TWI672497B TWI672497B TW105101920A TW105101920A TWI672497B TW I672497 B TWI672497 B TW I672497B TW 105101920 A TW105101920 A TW 105101920A TW 105101920 A TW105101920 A TW 105101920A TW I672497 B TWI672497 B TW I672497B
- Authority
- TW
- Taiwan
- Prior art keywords
- focus
- image
- different
- data
- intensity data
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000007547 defect Effects 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000015654 memory Effects 0.000 claims description 32
- 239000000872 buffer Substances 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 14
- 238000005286 illumination Methods 0.000 claims description 12
- 230000004927 fusion Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 55
- 230000000875 corresponding effect Effects 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 238000013480 data collection Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- SGTNSNPWRIOYBX-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-{[2-(3,4-dimethoxyphenyl)ethyl](methyl)amino}-2-(propan-2-yl)pentanenitrile Chemical compound C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 SGTNSNPWRIOYBX-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
Landscapes
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562105979P | 2015-01-21 | 2015-01-21 | |
| US62/105,979 | 2015-01-21 | ||
| US15/001,158 US9816940B2 (en) | 2015-01-21 | 2016-01-19 | Wafer inspection with focus volumetric method |
| US15/001,158 | 2016-01-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201632873A TW201632873A (zh) | 2016-09-16 |
| TWI672497B true TWI672497B (zh) | 2019-09-21 |
Family
ID=56407653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105101920A TWI672497B (zh) | 2015-01-21 | 2016-01-21 | 用於偵測一半導體樣本上之缺陷之方法及檢查系統 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9816940B2 (enExample) |
| JP (1) | JP6769971B2 (enExample) |
| KR (1) | KR102326402B1 (enExample) |
| CN (1) | CN107209125B (enExample) |
| DE (1) | DE112016000419B4 (enExample) |
| IL (1) | IL253384B (enExample) |
| TW (1) | TWI672497B (enExample) |
| WO (1) | WO2016118651A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9916965B2 (en) | 2015-12-31 | 2018-03-13 | Kla-Tencor Corp. | Hybrid inspectors |
| US10887580B2 (en) | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
| US11047806B2 (en) | 2016-11-30 | 2021-06-29 | Kla-Tencor Corporation | Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures |
| KR102429614B1 (ko) * | 2017-06-08 | 2022-08-04 | 삼성전자주식회사 | 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법 |
| US10957033B2 (en) | 2017-07-10 | 2021-03-23 | Kla-Tencor Corporation | Repeater defect detection |
| US11222799B2 (en) * | 2017-10-18 | 2022-01-11 | Kla Corporation | Swath selection for semiconductor inspection |
| US10599951B2 (en) | 2018-03-28 | 2020-03-24 | Kla-Tencor Corp. | Training a neural network for defect detection in low resolution images |
| KR102738153B1 (ko) * | 2018-06-04 | 2024-12-05 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정을 위한 공정 모델을 개선하는 방법 |
| US10846845B2 (en) * | 2018-07-25 | 2020-11-24 | Fei Company | Training an artificial neural network using simulated specimen images |
| US10957035B2 (en) * | 2018-11-30 | 2021-03-23 | Kla Corporation | Defect classification by fitting optical signals to a point-spread function |
| US11379967B2 (en) | 2019-01-18 | 2022-07-05 | Kla Corporation | Methods and systems for inspection of semiconductor structures with automatically generated defect features |
| KR102418198B1 (ko) * | 2019-05-15 | 2022-07-07 | 전상구 | 기판 상의 패턴을 측정하는 시스템들 및 방법들 |
| TWI755755B (zh) * | 2019-06-17 | 2022-02-21 | 邦睿生技股份有限公司 | 用於測試生物樣本的裝置 |
| JP7451227B2 (ja) * | 2020-02-28 | 2024-03-18 | 日東電工株式会社 | 光透過性積層体の検査方法 |
| CN112881419B (zh) * | 2021-05-06 | 2024-01-30 | 高视科技(苏州)股份有限公司 | 芯片检测方法、电子设备及存储介质 |
| JP7596234B2 (ja) * | 2021-08-25 | 2024-12-09 | 日東電工株式会社 | 光透過性積層体の検査方法および検査装置 |
| TWI792582B (zh) * | 2021-09-27 | 2023-02-11 | 海華科技股份有限公司 | 鏡頭對焦系統、鏡頭對焦方法以及圖表顯示結構 |
| CN119624841B (zh) * | 2025-02-11 | 2025-05-30 | 西安高商智能科技有限责任公司 | 基于图像处理的电阻阵列红外景象图像的图像增强方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201100779A (en) * | 2009-01-13 | 2011-01-01 | Semiconductor Technologies & Instr Pte Ltd | System and method for inspecting a wafer (3) |
| TW201113967A (en) * | 2009-01-13 | 2011-04-16 | Semiconductor Technologies & Instr Pte Ltd | System and method for inspecting a wafer (1) |
| US20130194569A1 (en) * | 2010-10-14 | 2013-08-01 | Koh Young Technology Inc. | Substrate inspection method |
| US8755041B2 (en) * | 2006-07-14 | 2014-06-17 | Hitachi High-Technologies Corporation | Defect inspection method and apparatus |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818110A (en) * | 1986-05-06 | 1989-04-04 | Kla Instruments Corporation | Method and apparatus of using a two beam interference microscope for inspection of integrated circuits and the like |
| JPH04142055A (ja) * | 1990-10-01 | 1992-05-15 | Nec Yamagata Ltd | 半導体ウェーハの外観検査装置 |
| US5438413A (en) * | 1993-03-03 | 1995-08-01 | Kla Instruments Corporation | Process for measuring overlay misregistration during semiconductor wafer fabrication |
| EP1190372A1 (en) | 1999-06-01 | 2002-03-27 | Greenvision Systems Ltd | Method for in-situ focus-fusion multi-layer spectral imaging and analysis of particulate samples |
| US7170075B2 (en) | 2002-07-18 | 2007-01-30 | Rudolph Technologies, Inc. | Inspection tool with a 3D point sensor to develop a focus map |
| JP2004198199A (ja) * | 2002-12-17 | 2004-07-15 | Hitachi High-Technologies Corp | 欠陥検査装置 |
| US7302360B2 (en) | 2003-10-24 | 2007-11-27 | Ade Corporation | Defect size projection |
| US7551272B2 (en) | 2005-11-09 | 2009-06-23 | Aceris 3D Inspection Inc. | Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object |
| JP4723362B2 (ja) | 2005-11-29 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | 光学式検査装置及びその方法 |
| US7659973B2 (en) | 2006-05-26 | 2010-02-09 | Applied Materials Southeast Asia, Pte Ltd. | Wafer inspection using short-pulsed continuous broadband illumination |
| US7904845B2 (en) | 2006-12-06 | 2011-03-08 | Kla-Tencor Corp. | Determining locations on a wafer to be reviewed during defect review |
| US8073240B2 (en) | 2007-05-07 | 2011-12-06 | Kla-Tencor Corp. | Computer-implemented methods, computer-readable media, and systems for identifying one or more optical modes of an inspection system as candidates for use in inspection of a layer of a wafer |
| JP5178079B2 (ja) * | 2007-07-23 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法およびその装置 |
| JP2009288162A (ja) * | 2008-05-30 | 2009-12-10 | Hitachi Kokusai Electric Inc | ３次元測定装置 |
| JP6185693B2 (ja) | 2008-06-11 | 2017-08-23 | ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP2010097419A (ja) * | 2008-10-16 | 2010-04-30 | Toshiba Plant Systems & Services Corp | 三次元データ処理装置、三次元データ処理プログラム、および三次元データ処理方法 |
| US8605275B2 (en) | 2009-01-26 | 2013-12-10 | Kla-Tencor Corp. | Detecting defects on a wafer |
| US9601393B2 (en) | 2009-02-06 | 2017-03-21 | Kla-Tencor Corp. | Selecting one or more parameters for inspection of a wafer |
| DE102010025033B4 (de) | 2010-06-23 | 2021-02-11 | Carl Zeiss Smt Gmbh | Verfahren zur Defekterkennung und Reparatur von EUV-Masken |
| US8810646B2 (en) | 2010-10-12 | 2014-08-19 | Kla-Tencor Corporation | Focus offset contamination inspection |
| DE112011104658B4 (de) * | 2010-12-29 | 2020-06-18 | Koh Young Technology Inc. | Verfahren zum Prüfen eines Substrats |
| US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
| US9595091B2 (en) * | 2012-04-19 | 2017-03-14 | Applied Materials Israel, Ltd. | Defect classification using topographical attributes |
| US9454072B2 (en) | 2012-11-09 | 2016-09-27 | Kla-Tencor Corporation | Method and system for providing a target design displaying high sensitivity to scanner focus change |
| US9390494B2 (en) | 2012-12-13 | 2016-07-12 | Kla-Tencor Corporation | Delta die intensity map measurement |
| US9176074B2 (en) * | 2013-01-28 | 2015-11-03 | Kabushiki Kaisha Toshiba | Pattern inspection method and pattern inspection apparatus |
| US9092846B2 (en) | 2013-02-01 | 2015-07-28 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific and multi-channel information |
| US9091935B2 (en) | 2013-03-11 | 2015-07-28 | Kla-Tencor Corporation | Multistage extreme ultra-violet mask qualification |
-
2016
- 2016-01-19 US US15/001,158 patent/US9816940B2/en active Active
- 2016-01-20 DE DE112016000419.2T patent/DE112016000419B4/de active Active
- 2016-01-20 KR KR1020177022502A patent/KR102326402B1/ko active Active
- 2016-01-20 WO PCT/US2016/014167 patent/WO2016118651A1/en not_active Ceased
- 2016-01-20 CN CN201680006491.8A patent/CN107209125B/zh active Active
- 2016-01-20 JP JP2017538344A patent/JP6769971B2/ja active Active
- 2016-01-21 TW TW105101920A patent/TWI672497B/zh active
-
2017
- 2017-07-10 IL IL253384A patent/IL253384B/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8755041B2 (en) * | 2006-07-14 | 2014-06-17 | Hitachi High-Technologies Corporation | Defect inspection method and apparatus |
| TW201100779A (en) * | 2009-01-13 | 2011-01-01 | Semiconductor Technologies & Instr Pte Ltd | System and method for inspecting a wafer (3) |
| TW201113967A (en) * | 2009-01-13 | 2011-04-16 | Semiconductor Technologies & Instr Pte Ltd | System and method for inspecting a wafer (1) |
| US20130194569A1 (en) * | 2010-10-14 | 2013-08-01 | Koh Young Technology Inc. | Substrate inspection method |
Also Published As
| Publication number | Publication date |
|---|---|
| US9816940B2 (en) | 2017-11-14 |
| DE112016000419T5 (de) | 2017-11-23 |
| DE112016000419B4 (de) | 2023-10-05 |
| IL253384A0 (en) | 2017-09-28 |
| IL253384B (en) | 2020-11-30 |
| US20160209334A1 (en) | 2016-07-21 |
| CN107209125A (zh) | 2017-09-26 |
| JP6769971B2 (ja) | 2020-10-14 |
| JP2018509752A (ja) | 2018-04-05 |
| KR102326402B1 (ko) | 2021-11-16 |
| KR20170102012A (ko) | 2017-09-06 |
| CN107209125B (zh) | 2018-10-19 |
| TW201632873A (zh) | 2016-09-16 |
| WO2016118651A1 (en) | 2016-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI672497B (zh) | 用於偵測一半導體樣本上之缺陷之方法及檢查系統 | |
| KR102438824B1 (ko) | 3차원 반도체 구조체들의 검사를 위한 결함 발견 및 레시피 최적화 | |
| US10887580B2 (en) | Three-dimensional imaging for semiconductor wafer inspection | |
| JP6918931B2 (ja) | 半導体ウエハ検査のための欠陥マーキング | |
| US11366069B2 (en) | Simultaneous multi-directional laser wafer inspection | |
| TWI679710B (zh) | 用於判定樣品上缺陷之系統、非暫時性電腦可讀媒體及方法 | |
| US8045145B1 (en) | Systems and methods for acquiring information about a defect on a specimen | |
| US8885037B2 (en) | Defect inspection method and apparatus therefor | |
| US9217717B2 (en) | Two dimensional optical detector with multiple shift registers | |
| KR20160037192A (ko) | 다이별 검사를 위한 오토포커스 시스템 및 방법 | |
| TW201630092A (zh) | 使用結構性資訊之缺陷偵測 | |
| US9702827B1 (en) | Optical mode analysis with design-based care areas | |
| US10304177B2 (en) | Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression | |
| TW202206805A (zh) | 用於光學目標檢索之光學影像對比度量 | |
| JP2013174575A (ja) | パターン検査装置、及びこれを使用した露光装置の制御方法 | |
| US20230332954A1 (en) | Apparatus and method for inspecting and measuring semiconductor device |