IL253384B - Wafer inspection with focus volumetric method - Google Patents
Wafer inspection with focus volumetric methodInfo
- Publication number
- IL253384B IL253384B IL253384A IL25338417A IL253384B IL 253384 B IL253384 B IL 253384B IL 253384 A IL253384 A IL 253384A IL 25338417 A IL25338417 A IL 25338417A IL 253384 B IL253384 B IL 253384B
- Authority
- IL
- Israel
- Prior art keywords
- chunk
- testing
- measurement method
- volume measurement
- focal volume
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562105979P | 2015-01-21 | 2015-01-21 | |
| US15/001,158 US9816940B2 (en) | 2015-01-21 | 2016-01-19 | Wafer inspection with focus volumetric method |
| PCT/US2016/014167 WO2016118651A1 (en) | 2015-01-21 | 2016-01-20 | Wafer inspection with focus volumetric method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL253384A0 IL253384A0 (en) | 2017-09-28 |
| IL253384B true IL253384B (en) | 2020-11-30 |
Family
ID=56407653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL253384A IL253384B (en) | 2015-01-21 | 2017-07-10 | Wafer inspection with focus volumetric method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9816940B2 (enExample) |
| JP (1) | JP6769971B2 (enExample) |
| KR (1) | KR102326402B1 (enExample) |
| CN (1) | CN107209125B (enExample) |
| DE (1) | DE112016000419B4 (enExample) |
| IL (1) | IL253384B (enExample) |
| TW (1) | TWI672497B (enExample) |
| WO (1) | WO2016118651A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9916965B2 (en) | 2015-12-31 | 2018-03-13 | Kla-Tencor Corp. | Hybrid inspectors |
| US10887580B2 (en) | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
| US11047806B2 (en) | 2016-11-30 | 2021-06-29 | Kla-Tencor Corporation | Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures |
| KR102429614B1 (ko) * | 2017-06-08 | 2022-08-04 | 삼성전자주식회사 | 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법 |
| US10957033B2 (en) * | 2017-07-10 | 2021-03-23 | Kla-Tencor Corporation | Repeater defect detection |
| US11222799B2 (en) | 2017-10-18 | 2022-01-11 | Kla Corporation | Swath selection for semiconductor inspection |
| US10599951B2 (en) | 2018-03-28 | 2020-03-24 | Kla-Tencor Corp. | Training a neural network for defect detection in low resolution images |
| KR102738153B1 (ko) * | 2018-06-04 | 2024-12-05 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정을 위한 공정 모델을 개선하는 방법 |
| US10846845B2 (en) * | 2018-07-25 | 2020-11-24 | Fei Company | Training an artificial neural network using simulated specimen images |
| US10957035B2 (en) * | 2018-11-30 | 2021-03-23 | Kla Corporation | Defect classification by fitting optical signals to a point-spread function |
| US11379967B2 (en) * | 2019-01-18 | 2022-07-05 | Kla Corporation | Methods and systems for inspection of semiconductor structures with automatically generated defect features |
| KR102418198B1 (ko) * | 2019-05-15 | 2022-07-07 | 전상구 | 기판 상의 패턴을 측정하는 시스템들 및 방법들 |
| TWI755755B (zh) * | 2019-06-17 | 2022-02-21 | 邦睿生技股份有限公司 | 用於測試生物樣本的裝置 |
| JP7451227B2 (ja) * | 2020-02-28 | 2024-03-18 | 日東電工株式会社 | 光透過性積層体の検査方法 |
| CN112881419B (zh) * | 2021-05-06 | 2024-01-30 | 高视科技(苏州)股份有限公司 | 芯片检测方法、电子设备及存储介质 |
| JP7596234B2 (ja) * | 2021-08-25 | 2024-12-09 | 日東電工株式会社 | 光透過性積層体の検査方法および検査装置 |
| TWI792582B (zh) * | 2021-09-27 | 2023-02-11 | 海華科技股份有限公司 | 鏡頭對焦系統、鏡頭對焦方法以及圖表顯示結構 |
| CN119624841B (zh) * | 2025-02-11 | 2025-05-30 | 西安高商智能科技有限责任公司 | 基于图像处理的电阻阵列红外景象图像的图像增强方法 |
| CN121007907A (zh) * | 2025-10-27 | 2025-11-25 | 季华实验室 | 芯片多层aoi检测设备和芯片多层aoi检测设备的检测方法 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818110A (en) * | 1986-05-06 | 1989-04-04 | Kla Instruments Corporation | Method and apparatus of using a two beam interference microscope for inspection of integrated circuits and the like |
| JPH04142055A (ja) * | 1990-10-01 | 1992-05-15 | Nec Yamagata Ltd | 半導体ウェーハの外観検査装置 |
| US5438413A (en) * | 1993-03-03 | 1995-08-01 | Kla Instruments Corporation | Process for measuring overlay misregistration during semiconductor wafer fabrication |
| EP1190372A1 (en) | 1999-06-01 | 2002-03-27 | Greenvision Systems Ltd | Method for in-situ focus-fusion multi-layer spectral imaging and analysis of particulate samples |
| US7170075B2 (en) | 2002-07-18 | 2007-01-30 | Rudolph Technologies, Inc. | Inspection tool with a 3D point sensor to develop a focus map |
| JP2004198199A (ja) * | 2002-12-17 | 2004-07-15 | Hitachi High-Technologies Corp | 欠陥検査装置 |
| US7302360B2 (en) | 2003-10-24 | 2007-11-27 | Ade Corporation | Defect size projection |
| US7551272B2 (en) | 2005-11-09 | 2009-06-23 | Aceris 3D Inspection Inc. | Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object |
| JP4723362B2 (ja) | 2005-11-29 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | 光学式検査装置及びその方法 |
| US7659973B2 (en) | 2006-05-26 | 2010-02-09 | Applied Materials Southeast Asia, Pte Ltd. | Wafer inspection using short-pulsed continuous broadband illumination |
| JP4928862B2 (ja) * | 2006-08-04 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| US7904845B2 (en) | 2006-12-06 | 2011-03-08 | Kla-Tencor Corp. | Determining locations on a wafer to be reviewed during defect review |
| US8073240B2 (en) | 2007-05-07 | 2011-12-06 | Kla-Tencor Corp. | Computer-implemented methods, computer-readable media, and systems for identifying one or more optical modes of an inspection system as candidates for use in inspection of a layer of a wafer |
| JP5178079B2 (ja) * | 2007-07-23 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法およびその装置 |
| JP2009288162A (ja) * | 2008-05-30 | 2009-12-10 | Hitachi Kokusai Electric Inc | ３次元測定装置 |
| JP6185693B2 (ja) | 2008-06-11 | 2017-08-23 | ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP2010097419A (ja) * | 2008-10-16 | 2010-04-30 | Toshiba Plant Systems & Services Corp | 三次元データ処理装置、三次元データ処理プログラム、および三次元データ処理方法 |
| SG164293A1 (en) * | 2009-01-13 | 2010-09-29 | Semiconductor Technologies & Instruments Pte | System and method for inspecting a wafer |
| SG163442A1 (en) * | 2009-01-13 | 2010-08-30 | Semiconductor Technologies & Instruments | System and method for inspecting a wafer |
| US8605275B2 (en) | 2009-01-26 | 2013-12-10 | Kla-Tencor Corp. | Detecting defects on a wafer |
| EP2394295A2 (en) | 2009-02-06 | 2011-12-14 | KLA-Tencor Corporation | Selecting one or more parameters for inspection of a wafer |
| DE102010025033B4 (de) | 2010-06-23 | 2021-02-11 | Carl Zeiss Smt Gmbh | Verfahren zur Defekterkennung und Reparatur von EUV-Masken |
| US8810646B2 (en) | 2010-10-12 | 2014-08-19 | Kla-Tencor Corporation | Focus offset contamination inspection |
| KR101158323B1 (ko) * | 2010-10-14 | 2012-06-26 | 주식회사 고영테크놀러지 | 기판 검사방법 |
| DE112011104658B4 (de) * | 2010-12-29 | 2020-06-18 | Koh Young Technology Inc. | Verfahren zum Prüfen eines Substrats |
| US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
| US9595091B2 (en) * | 2012-04-19 | 2017-03-14 | Applied Materials Israel, Ltd. | Defect classification using topographical attributes |
| US9454072B2 (en) | 2012-11-09 | 2016-09-27 | Kla-Tencor Corporation | Method and system for providing a target design displaying high sensitivity to scanner focus change |
| US9390494B2 (en) | 2012-12-13 | 2016-07-12 | Kla-Tencor Corporation | Delta die intensity map measurement |
| US9176074B2 (en) | 2013-01-28 | 2015-11-03 | Kabushiki Kaisha Toshiba | Pattern inspection method and pattern inspection apparatus |
| US9092846B2 (en) | 2013-02-01 | 2015-07-28 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific and multi-channel information |
| US9091935B2 (en) | 2013-03-11 | 2015-07-28 | Kla-Tencor Corporation | Multistage extreme ultra-violet mask qualification |
-
2016
- 2016-01-19 US US15/001,158 patent/US9816940B2/en active Active
- 2016-01-20 JP JP2017538344A patent/JP6769971B2/ja active Active
- 2016-01-20 CN CN201680006491.8A patent/CN107209125B/zh active Active
- 2016-01-20 WO PCT/US2016/014167 patent/WO2016118651A1/en not_active Ceased
- 2016-01-20 DE DE112016000419.2T patent/DE112016000419B4/de active Active
- 2016-01-20 KR KR1020177022502A patent/KR102326402B1/ko active Active
- 2016-01-21 TW TW105101920A patent/TWI672497B/zh active
-
2017
- 2017-07-10 IL IL253384A patent/IL253384B/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN107209125A (zh) | 2017-09-26 |
| CN107209125B (zh) | 2018-10-19 |
| US9816940B2 (en) | 2017-11-14 |
| WO2016118651A1 (en) | 2016-07-28 |
| KR102326402B1 (ko) | 2021-11-16 |
| TW201632873A (zh) | 2016-09-16 |
| JP6769971B2 (ja) | 2020-10-14 |
| DE112016000419B4 (de) | 2023-10-05 |
| US20160209334A1 (en) | 2016-07-21 |
| TWI672497B (zh) | 2019-09-21 |
| DE112016000419T5 (de) | 2017-11-23 |
| IL253384A0 (en) | 2017-09-28 |
| JP2018509752A (ja) | 2018-04-05 |
| KR20170102012A (ko) | 2017-09-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed |