KR102326402B1 - 포커스 용적 측정 방법을 이용한 웨이퍼 검사 - Google Patents

포커스 용적 측정 방법을 이용한 웨이퍼 검사 Download PDF

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KR102326402B1
KR102326402B1 KR1020177022502A KR20177022502A KR102326402B1 KR 102326402 B1 KR102326402 B1 KR 102326402B1 KR 1020177022502 A KR1020177022502 A KR 1020177022502A KR 20177022502 A KR20177022502 A KR 20177022502A KR 102326402 B1 KR102326402 B1 KR 102326402B1
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coefficient
focus
swath
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KR20170102012A (ko
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그레이스 에이치. 첸
키스 웰스
마커스 후버
세백 오
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케이엘에이 코포레이션
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    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H01L22/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020177022502A 2015-01-21 2016-01-20 포커스 용적 측정 방법을 이용한 웨이퍼 검사 Active KR102326402B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562105979P 2015-01-21 2015-01-21
US62/105,979 2015-01-21
US15/001,158 US9816940B2 (en) 2015-01-21 2016-01-19 Wafer inspection with focus volumetric method
US15/001,158 2016-01-19
PCT/US2016/014167 WO2016118651A1 (en) 2015-01-21 2016-01-20 Wafer inspection with focus volumetric method

Publications (2)

Publication Number Publication Date
KR20170102012A KR20170102012A (ko) 2017-09-06
KR102326402B1 true KR102326402B1 (ko) 2021-11-16

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KR1020177022502A Active KR102326402B1 (ko) 2015-01-21 2016-01-20 포커스 용적 측정 방법을 이용한 웨이퍼 검사

Country Status (8)

Country Link
US (1) US9816940B2 (enExample)
JP (1) JP6769971B2 (enExample)
KR (1) KR102326402B1 (enExample)
CN (1) CN107209125B (enExample)
DE (1) DE112016000419B4 (enExample)
IL (1) IL253384B (enExample)
TW (1) TWI672497B (enExample)
WO (1) WO2016118651A1 (enExample)

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US11047806B2 (en) 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
KR102429614B1 (ko) * 2017-06-08 2022-08-04 삼성전자주식회사 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법
US10957033B2 (en) * 2017-07-10 2021-03-23 Kla-Tencor Corporation Repeater defect detection
US11222799B2 (en) 2017-10-18 2022-01-11 Kla Corporation Swath selection for semiconductor inspection
US10599951B2 (en) 2018-03-28 2020-03-24 Kla-Tencor Corp. Training a neural network for defect detection in low resolution images
KR102738153B1 (ko) * 2018-06-04 2024-12-05 에이에스엠엘 네델란즈 비.브이. 패터닝 공정을 위한 공정 모델을 개선하는 방법
US10846845B2 (en) * 2018-07-25 2020-11-24 Fei Company Training an artificial neural network using simulated specimen images
US10957035B2 (en) * 2018-11-30 2021-03-23 Kla Corporation Defect classification by fitting optical signals to a point-spread function
US11379967B2 (en) * 2019-01-18 2022-07-05 Kla Corporation Methods and systems for inspection of semiconductor structures with automatically generated defect features
KR102418198B1 (ko) * 2019-05-15 2022-07-07 전상구 기판 상의 패턴을 측정하는 시스템들 및 방법들
TWI755755B (zh) * 2019-06-17 2022-02-21 邦睿生技股份有限公司 用於測試生物樣本的裝置
JP7451227B2 (ja) * 2020-02-28 2024-03-18 日東電工株式会社 光透過性積層体の検査方法
CN112881419B (zh) * 2021-05-06 2024-01-30 高视科技(苏州)股份有限公司 芯片检测方法、电子设备及存储介质
JP7596234B2 (ja) * 2021-08-25 2024-12-09 日東電工株式会社 光透過性積層体の検査方法および検査装置
TWI792582B (zh) * 2021-09-27 2023-02-11 海華科技股份有限公司 鏡頭對焦系統、鏡頭對焦方法以及圖表顯示結構
CN119624841B (zh) * 2025-02-11 2025-05-30 西安高商智能科技有限责任公司 基于图像处理的电阻阵列红外景象图像的图像增强方法
CN121007907A (zh) * 2025-10-27 2025-11-25 季华实验室 芯片多层aoi检测设备和芯片多层aoi检测设备的检测方法

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US20140009601A1 (en) 2010-12-29 2014-01-09 Koh Young Technology Inc. Method of inpsecting a substrate
US20140141536A1 (en) 2012-11-09 2014-05-22 Kla-Tencor Corporation Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change

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US20140009601A1 (en) 2010-12-29 2014-01-09 Koh Young Technology Inc. Method of inpsecting a substrate
US20140141536A1 (en) 2012-11-09 2014-05-22 Kla-Tencor Corporation Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change

Also Published As

Publication number Publication date
IL253384B (en) 2020-11-30
CN107209125A (zh) 2017-09-26
CN107209125B (zh) 2018-10-19
US9816940B2 (en) 2017-11-14
WO2016118651A1 (en) 2016-07-28
TW201632873A (zh) 2016-09-16
JP6769971B2 (ja) 2020-10-14
DE112016000419B4 (de) 2023-10-05
US20160209334A1 (en) 2016-07-21
TWI672497B (zh) 2019-09-21
DE112016000419T5 (de) 2017-11-23
IL253384A0 (en) 2017-09-28
JP2018509752A (ja) 2018-04-05
KR20170102012A (ko) 2017-09-06

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