CN107209125B - 以聚焦体积方法的晶片检验 - Google Patents

以聚焦体积方法的晶片检验 Download PDF

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Publication number
CN107209125B
CN107209125B CN201680006491.8A CN201680006491A CN107209125B CN 107209125 B CN107209125 B CN 107209125B CN 201680006491 A CN201680006491 A CN 201680006491A CN 107209125 B CN107209125 B CN 107209125B
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different
intensity data
swaths
data
focus
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Chinese (zh)
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CN107209125A (zh
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G·H·陈
K·韦尔斯
M·胡贝尔
S·吴
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201680006491.8A 2015-01-21 2016-01-20 以聚焦体积方法的晶片检验 Active CN107209125B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562105979P 2015-01-21 2015-01-21
US62/105,979 2015-01-21
US15/001,158 US9816940B2 (en) 2015-01-21 2016-01-19 Wafer inspection with focus volumetric method
US15/001,158 2016-01-19
PCT/US2016/014167 WO2016118651A1 (en) 2015-01-21 2016-01-20 Wafer inspection with focus volumetric method

Publications (2)

Publication Number Publication Date
CN107209125A CN107209125A (zh) 2017-09-26
CN107209125B true CN107209125B (zh) 2018-10-19

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CN201680006491.8A Active CN107209125B (zh) 2015-01-21 2016-01-20 以聚焦体积方法的晶片检验

Country Status (8)

Country Link
US (1) US9816940B2 (enExample)
JP (1) JP6769971B2 (enExample)
KR (1) KR102326402B1 (enExample)
CN (1) CN107209125B (enExample)
DE (1) DE112016000419B4 (enExample)
IL (1) IL253384B (enExample)
TW (1) TWI672497B (enExample)
WO (1) WO2016118651A1 (enExample)

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US11047806B2 (en) 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
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US10957033B2 (en) * 2017-07-10 2021-03-23 Kla-Tencor Corporation Repeater defect detection
US11222799B2 (en) * 2017-10-18 2022-01-11 Kla Corporation Swath selection for semiconductor inspection
US10599951B2 (en) 2018-03-28 2020-03-24 Kla-Tencor Corp. Training a neural network for defect detection in low resolution images
US11977336B2 (en) * 2018-06-04 2024-05-07 Asml Netherlands B.V. Method for improving a process for a patterning process
US10846845B2 (en) * 2018-07-25 2020-11-24 Fei Company Training an artificial neural network using simulated specimen images
US10957035B2 (en) * 2018-11-30 2021-03-23 Kla Corporation Defect classification by fitting optical signals to a point-spread function
US11379967B2 (en) 2019-01-18 2022-07-05 Kla Corporation Methods and systems for inspection of semiconductor structures with automatically generated defect features
KR102418198B1 (ko) * 2019-05-15 2022-07-07 전상구 기판 상의 패턴을 측정하는 시스템들 및 방법들
TWI808435B (zh) * 2019-06-17 2023-07-11 邦睿生技股份有限公司 複數視角分析的自動測試裝置
JP7451227B2 (ja) * 2020-02-28 2024-03-18 日東電工株式会社 光透過性積層体の検査方法
CN112881419B (zh) * 2021-05-06 2024-01-30 高视科技(苏州)股份有限公司 芯片检测方法、电子设备及存储介质
JP7596234B2 (ja) * 2021-08-25 2024-12-09 日東電工株式会社 光透過性積層体の検査方法および検査装置
TWI792582B (zh) * 2021-09-27 2023-02-11 海華科技股份有限公司 鏡頭對焦系統、鏡頭對焦方法以及圖表顯示結構
CN119624841B (zh) * 2025-02-11 2025-05-30 西安高商智能科技有限责任公司 基于图像处理的电阻阵列红外景象图像的图像增强方法
CN121007907A (zh) * 2025-10-27 2025-11-25 季华实验室 芯片多层aoi检测设备和芯片多层aoi检测设备的检测方法

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Also Published As

Publication number Publication date
IL253384A0 (en) 2017-09-28
WO2016118651A1 (en) 2016-07-28
TWI672497B (zh) 2019-09-21
US20160209334A1 (en) 2016-07-21
CN107209125A (zh) 2017-09-26
JP6769971B2 (ja) 2020-10-14
US9816940B2 (en) 2017-11-14
JP2018509752A (ja) 2018-04-05
IL253384B (en) 2020-11-30
DE112016000419B4 (de) 2023-10-05
KR20170102012A (ko) 2017-09-06
KR102326402B1 (ko) 2021-11-16
DE112016000419T5 (de) 2017-11-23
TW201632873A (zh) 2016-09-16

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