WO2016095263A1 - 一种ltps阵列基板 - Google Patents
一种ltps阵列基板 Download PDFInfo
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- WO2016095263A1 WO2016095263A1 PCT/CN2014/095326 CN2014095326W WO2016095263A1 WO 2016095263 A1 WO2016095263 A1 WO 2016095263A1 CN 2014095326 W CN2014095326 W CN 2014095326W WO 2016095263 A1 WO2016095263 A1 WO 2016095263A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 186
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 239000011241 protective layer Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Abstract
Description
Claims (10)
- 一种LTPS阵列基板,其包括多个低温多晶硅薄膜晶体管、底层透明导电层、形成于底层透明导电层上的保护层以及形成于所述保护层上的顶层透明导电层,所述每一低温多晶硅薄膜晶体管包括基板;形成于所述基板上的图形化的遮光层;形成于所述基板和所述图形化的遮光层上的缓冲层;形成于所述缓冲层上的图像化的多晶硅层;形成于所述图形化的多晶硅层和所述缓冲层上的栅极绝缘层;形成于所述栅极绝缘层上的第一金属层;第一金属层图案化后形成扫描线;所述扫描线正投影于所述遮光层上;形成于所述图案化的第一金属层上的绝缘层;形成于所述绝缘层上的第二金属层,图案化所述第二金属层后形成数据线及源漏极所述数据线与所述扫描线相交设置;形成于所述绝缘层和图案化后的第二金属层上的平坦层;所述底层透明导电层形成于所述平坦层上;其中:所述图案化的遮光层覆盖所述扫描线与所述源漏极,所述底层透明导电层上与所述保护层之间形成有图案化的第三金属层,所述图案化的第三金属层包括第一区域及与第一区域相交设置的第二区域,所述第一区域遮盖所述数据线,所述第二区域的一部分与所述遮光层靠近源漏极的一侧位置叠加设置,与所述遮光层共同遮盖所述源漏极及部分扫描线。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述图案化的第三金属层为触控感应电极层。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述扫描线延伸有覆盖部分所述图形化的多晶硅层的延伸区域,所述延伸区域被所述遮光层及所述第二区域遮盖。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述第二区域与所述遮光层部分叠加设置,进而使所述第二区域与所述遮光层在宽度方向上形成遮蔽区,所述宽度方向是指由低温多晶硅薄膜晶体管的扫描线朝向源漏极延伸 的方向。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述图案化的第二金属层通过过孔与所述多晶硅层电连接。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述顶层透明导电层形成于所述保护层上且通过过孔与所述源漏极电连接。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述栅极绝缘层采用氧化硅、氮化硅与氮氧化硅中的一种制成。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述第一金属层与第二金属层的材料为钼铝合金、铬金属等导电材料。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述底层透明导电层与顶层透明导电层为透明导电材料制成。
- 如权利要求1所述的一种LTPS阵列基板,其中,所述第三金属层呈网格状。
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JP2017531498A JP6460584B2 (ja) | 2014-12-16 | 2014-12-29 | Ltpsアレイ基板 |
US14/426,464 US9620536B2 (en) | 2014-12-16 | 2014-12-29 | LTPS array substrate |
KR1020177017249A KR101978584B1 (ko) | 2014-12-16 | 2014-12-29 | 저온 폴리-실리콘 어레이 기판 |
GB1710134.6A GB2548753B (en) | 2014-12-16 | 2014-12-29 | LTPS array substrate |
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CN201410784820.4 | 2014-12-16 | ||
CN201410784820.4A CN104538400B (zh) | 2014-12-16 | 2014-12-16 | 一种ltps阵列基板 |
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US (1) | US9620536B2 (zh) |
JP (1) | JP6460584B2 (zh) |
KR (1) | KR101978584B1 (zh) |
CN (1) | CN104538400B (zh) |
GB (1) | GB2548753B (zh) |
WO (1) | WO2016095263A1 (zh) |
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CN107046064B (zh) * | 2017-02-22 | 2020-01-03 | 武汉华星光电技术有限公司 | 一种薄膜晶体管 |
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CN107910378B (zh) | 2017-11-14 | 2021-01-26 | 京东方科技集团股份有限公司 | Ltps薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN108803170B (zh) * | 2018-06-22 | 2021-10-08 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
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CN112785917B (zh) * | 2019-11-04 | 2023-10-10 | 群创光电股份有限公司 | 电子装置 |
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CN104538400A (zh) | 2015-04-22 |
CN104538400B (zh) | 2017-08-04 |
US20160343747A1 (en) | 2016-11-24 |
GB2548753B (en) | 2021-01-20 |
GB201710134D0 (en) | 2017-08-09 |
JP6460584B2 (ja) | 2019-01-30 |
US9620536B2 (en) | 2017-04-11 |
GB2548753A (en) | 2017-09-27 |
KR101978584B1 (ko) | 2019-05-14 |
JP2018502321A (ja) | 2018-01-25 |
KR20170086633A (ko) | 2017-07-26 |
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