US20150364494A1 - Array substrate and display device - Google Patents
Array substrate and display device Download PDFInfo
- Publication number
- US20150364494A1 US20150364494A1 US14/549,086 US201414549086A US2015364494A1 US 20150364494 A1 US20150364494 A1 US 20150364494A1 US 201414549086 A US201414549086 A US 201414549086A US 2015364494 A1 US2015364494 A1 US 2015364494A1
- Authority
- US
- United States
- Prior art keywords
- branch
- gate lines
- gate
- width
- data lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Definitions
- the present disclosure relates to the field of display technology, in particular to an array substrate and a display device.
- a liquid crystal display panel includes an array substrate and a color film substrate arranged opposite to each other to form a cell.
- the array substrate includes a plurality of gate lines and a plurality of data lines that intersect with each other.
- a coupling capacitance present at an overlapping portion between the gate line and the data line, will adversely affect the transmission of a gate line signal and a data line signal, and thus deteriorate the display quality.
- an increasing size of the display panel such a situation grows steadily worse.
- the present disclosure provides an array substrate and a display device, which can reduce a coupling capacitance at an overlapping region between a gate line and a data line.
- one embodiment of the present disclosure provides an array substrate including a plurality of gate lines, a plurality of data lines intersecting with the gate lines, and a plurality of thin film transistors (TFTs) connected to the gate lines and the data lines.
- At least one of the data lines is divided into a first branch and a second branch at a predetermined region where an intersection of the at least one of the data lines and at least one of the gate lines is located.
- the first branch overlaps the at least one of the gate lines; the first branch has a width less than a width of a non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines.
- the second branch overlaps a gate electrode of a corresponding one of the TFTs, and serves as, or is connected to, a source electrode of the corresponding TFT.
- the second branch has a width less than the width of the non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines.
- the at least one of the gate lines includes a thinning portion; the thinning portion overlaps the first branch; the thinning portion has a width less than a width of a non-overlapping portion of the at least one of the gate lines that does not overlap the at least one of the data lines.
- the at least one of the gate lines is provided with a widening portion; the widening portion has a width greater than the width of the non-overlapping portion of the at least one of the gate lines that does not overlap the at least one of the data lines; the widening portion overlaps the second branch as the gate electrode of the corresponding TFT. A part of the widening portion is located in the gap between the first branch and the second branch.
- the widening portion and the thinning portion are arranged in abutment with each other.
- the at least one of the gate lines extends in a first direction
- the at least one of the data lines extends in a second direction perpendicular to the first direction; the widening portion and the thinning portion are arranged in abutment with each other in the first direction.
- a region is defined between an edge of the first branch which is located adjacent to the second branch and an extension line of an edge of the non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines and which is located adjacent to the second branch, and a part of the widening portion is located in the region.
- the region is located within the gap.
- a first end of the second branch is connected to a first end of the first branch, and a second end of the second branch is connected to a second end of the first branch.
- a first end of the second branch is connected to a first end of the first branch, and a second end of the second branch is not connected to a second end of the first branch.
- One embodiment of the present disclosure provides a display device including the above-mentioned array substrate.
- the present disclosure has following advantageous effect.
- the first branch of the data line overlaps the gate line, and the second branch overlaps the gate electrode of the TFT. Since the width of the first branch is less than the width of the non-overlapping portion of the data line that does not overlap the gate line, thus, an area of an overlapping region between the data line and the gate line may be reduced and the coupling capacitance therebetween may be reduced, thereby improving a display effect of the display device including the array substrate.
- FIG. 1 is a schematic view showing an array substrate according to one embodiment of the present disclosure
- FIG. 2 is a sectional view of the array substrate taken along a line A 1 -A 2 in FIG. 1 ;
- FIG. 3 is a schematic view showing an array substrate according to another embodiment of the present disclosure.
- FIG. 4 is a schematic view showing a data line according to one embodiment of the present disclosure.
- FIG. 5 is a schematic view showing a gate line according to one embodiment of the present disclosure.
- one embodiment of the present disclosure provides an array substrate including a plurality of gate lines, a plurality of data lines intersecting with the gate lines, and a plurality of TFTs connected to the gate lines and the data lines.
- the data line is divided into a first branch and a second branch at a predetermined region where an intersection of the data line and the gate line is located.
- the first branch overlaps the gate line.
- the first branch has a width less than a width of a non-overlapping portion of the data line which does not overlap the gate lines.
- the second branch overlaps a gate electrode of the TFT, and serves as, or is connected to, a source electrode of the TFT.
- the predetermined region where the intersection of the data line and the gate line refers to an overlapping region between the data line and the gate line, or a region adjacent to the overlapping region.
- the non-overlapping portion of the data line that does not overlap the gate line refers to a portion of the data line rather than the first branch and the second branch.
- the first branch of the data line overlaps the gate line and the second branch overlaps the gate electrode of the TFT, i.e., an actual overlapping region between the data line and the gate line is an overlapping region between the first branch and the gate line. Since the width of the first branch is less than a width of the non-overlapping portion of the data line that does not overlap the gate line, thus, an area of the overlapping region between the data line and the gate line may be reduced and the coupling capacitance between the data line and the gate line may be reduced, thereby improving a display effect of a display device including the array substrate of one embodiment of the present disclosure.
- the second branch of the data line overlaps the gate electrode of the TFT, and serves as, or is connected to, the source electrode of the TFT.
- the second branch of the data line has a width less than the width of the non-overlapping portion of the data line that does not overlap the gate line, so as to reduce the coupling capacitance between the gate electrode and the source electrode of the TFT.
- the gate line includes a thinning portion.
- the thinning portion overlaps the first branch.
- the thinning portion has a width less than a width of a non-overlapping portion of the gate line that does not overlap the data line.
- the gate line is provided with a widening portion.
- the widening portion has a width greater than the width of the non-overlapping portion of the gate line that does not overlap the data line.
- the widening portion overlaps the second branch as the gate electrode of the TFT. A part of the widening portion is located in a gap between the first branch and the second branch.
- a region is formed between an edge of the first branch which is located adjacent to the second branch and an extension line of an edge of the non-overlapping portion of the data line which does not overlap the gate line and which is located adjacent to the second branch, and a part of the widening portion is located in the region, so as to reduce an area of a pixel region occupied by the TFT, thereby increasing an aperture ratio of a pixel and further improving the display effect of the display device.
- FIG. 1 is a schematic view showing an array substrate according to one embodiment of the present disclosure.
- FIG. 2 is a sectional view of the array substrate taken along a line A 1 -A 2 in FIG. 1 .
- FIG. 4 is a schematic view showing a data line according to one embodiment of the present disclosure.
- FIG. 5 is a schematic view showing a gate line according to one embodiment of the present disclosure.
- the array substrate includes a plurality of gate lines 10 , a plurality of data lines 20 intersecting with the gate lines 10 , and a plurality of TFTs connected to the gate lines 10 and the data lines 20 .
- the data line 20 is divided into a first branch 20 a and a second branch 20 b at a predetermined region where an intersection of the data line 20 and the gate line 10 is located.
- a first end of the second branch 20 b is connected to a first end of the first branch 20 a
- a second end of the second branch 20 b is connected to a second end of the first branch 20 a .
- the data line 20 is divided into the first branch 20 a and the second branch 20 b at a part of the data line 20 adjacent to the intersection of the data line 20 and the gate line 10 ; and the first branch 20 a and the second branch 20 b converge after they pass through the intersection.
- first branch 20 a and the second branch 20 b may not converge after they pass through the intersection, i.e., the first end of the second branch 20 b is connected to the first end of the first branch 20 a , and the second end of the second branch 20 b is not connected to the second end of the first branch 20 a.
- the gate line 10 is thinned at a part of the gate line 10 adjacent to the intersection of the gate line 10 and the data line 20 , thereby forming a thinning portion 10 a .
- the thinning portion 10 a overlaps the first branch 20 a .
- a part of the gate line 10 is thickened, thereby forming a widening portion lob.
- a part of the widening portion 10 b is located in the gap 20 c between the first branch 20 a and the second branch 20 b .
- the widening portion 10 b overlaps the second branch 20 b as the gate electrode of the TFT.
- a region 43 is formed between an edge 41 of the first branch 20 a which is located adjacent to the second branch 20 b and an extension line 42 of an edge of the non-overlapping portion of the data line 20 which does not overlap the gate line 10 and which is located adjacent to the second branch 20 b , and a part of the widening portion 10 b is located in the region 43 , so as to reduce the area of the pixel region occupied by the TFT and increase the aperture ratio of the pixel, thereby further improving the display effect of the display device.
- both of a width W 20 a of the first branch 20 a and a width W 20 b of the second branch 20 b are less than a width W 20 of the non-overlapping portion of the data line 20 that does not overlap the gate line 10 .
- a width W 10 a of the thinning portion 10 a is less than a width W 10 of the non-overlapping portion of the gate line 10 that does not overlap the data line 20 .
- a width W 10 b of the widening portion 10 b is greater than the width W 10 of the non-overlapping portion of the gate line 10 that does not overlap the data line 20 .
- the TFT includes the gate electrode, an active layer 13 , a source electrode 21 and a drain electrode 22 .
- the gate electrode of the TFT is just the widening portion 10 b , and the source electrode 21 thereof is connected to the second branch 20 b of the data line.
- the TFT includes a U-shaped channel. Since the U-shaped channel has a large width to length ratio, thus the TFT has a large on-state current.
- the array substrate further includes a base plate 1 , a gate insulating layer 12 and a pixel electrode 32 .
- the pixel electrode 32 is in electrical connection with the drain electrode 32 through a via-hole 31 .
- FIG. 3 is a schematic view showing an array substrate according to another embodiment of the present disclosure.
- the array substrate in this embodiment differs from that in the previous embodiment in that the second branch 20 b of the data line is directly used as the source electrode of the TFT, i.e., a portion indicated by the reference sign 21 in FIG. 1 is omitted.
- the gate line 10 and the data line 20 may be made of a metallic material such as Cu, Al, Mo, Ti, Cr and W, or an alloy thereof.
- the gate line 10 may be of a single-layered structure or a multi-layered structure, e.g., Mo/Al/Mo, Ti/Cu/Ti or Mo/Ti/Cu.
- the gate insulating layer 12 may be made of SiN or SiO.
- the gate insulating layer 12 may be of a single-layered structure or a multi-layered structure, e.g., SiO/SiN.
- the active layer 13 may be made of amorphous silicon, polycrystalline silicon, microcrystalline silicon or an oxide semiconductive material.
- the array substrate may further include a passivation layer 30 made of an inorganic matter such as SiN.
- the pixel electrode 32 may be made of ITO, IZO, or any other transparent metal oxide conductive material.
- a method for manufacturing the array substrate will be described hereinafter in conjunction with FIG. 2 .
- the method includes steps of:
- a metal layer e.g., Al
- a photoresist onto the metal layer, and exposing, developing and etching the photoresist so as to form a pattern of the gate line 10 ;
- a semiconductor layer e.g., continuously depositing a-Si and n+a-Si by PECVD or depositing IGZO by sputtering, applying a photoresist onto the semiconductor layer, and exposing, developing and etching the photoresist so as to form a pattern of the active layer 13 ;
- a metal layer e.g., Al
- a photoresist onto the metal layer
- exposing, developing and etching the photoresist to form patterns of the data line 20 , the source electrode 21 and the drain electrode 22 .
- the method may further include steps of:
- a layer of a transparent metal oxide conductive material e.g., ITO, by sputtering, applying a photoresist onto the layer, and exposing, developing and etching the photoresist to form a pattern of the pixel electrode 32 .
- a transparent metal oxide conductive material e.g., ITO
- the present disclosure further provides a display device including the above-mentioned array substrate.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
- The present application claims a priority of the Chinese patent application No. 201420313509.7 filed on Jun. 12, 2014, which is incorporated herein by reference in its entirety.
- The present disclosure relates to the field of display technology, in particular to an array substrate and a display device.
- Liquid crystal display technology has been widely used in TVs, mobile telephones and public information distributed systems. A liquid crystal display panel includes an array substrate and a color film substrate arranged opposite to each other to form a cell. The array substrate includes a plurality of gate lines and a plurality of data lines that intersect with each other. A coupling capacitance, present at an overlapping portion between the gate line and the data line, will adversely affect the transmission of a gate line signal and a data line signal, and thus deteriorate the display quality. Along with an increasing size of the display panel, such a situation grows steadily worse.
- In view of this, the present disclosure provides an array substrate and a display device, which can reduce a coupling capacitance at an overlapping region between a gate line and a data line.
- In order to solve the above technical problem, one embodiment of the present disclosure provides an array substrate including a plurality of gate lines, a plurality of data lines intersecting with the gate lines, and a plurality of thin film transistors (TFTs) connected to the gate lines and the data lines. At least one of the data lines is divided into a first branch and a second branch at a predetermined region where an intersection of the at least one of the data lines and at least one of the gate lines is located. The first branch overlaps the at least one of the gate lines; the first branch has a width less than a width of a non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines. The second branch overlaps a gate electrode of a corresponding one of the TFTs, and serves as, or is connected to, a source electrode of the corresponding TFT.
- Further, the second branch has a width less than the width of the non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines.
- Further, the at least one of the gate lines includes a thinning portion; the thinning portion overlaps the first branch; the thinning portion has a width less than a width of a non-overlapping portion of the at least one of the gate lines that does not overlap the at least one of the data lines.
- Further, the at least one of the gate lines is provided with a widening portion; the widening portion has a width greater than the width of the non-overlapping portion of the at least one of the gate lines that does not overlap the at least one of the data lines; the widening portion overlaps the second branch as the gate electrode of the corresponding TFT. A part of the widening portion is located in the gap between the first branch and the second branch.
- Further, the widening portion and the thinning portion are arranged in abutment with each other.
- Further, the at least one of the gate lines extends in a first direction, the at least one of the data lines extends in a second direction perpendicular to the first direction; the widening portion and the thinning portion are arranged in abutment with each other in the first direction.
- Further, a region is defined between an edge of the first branch which is located adjacent to the second branch and an extension line of an edge of the non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines and which is located adjacent to the second branch, and a part of the widening portion is located in the region.
- Further, the region is located within the gap.
- Further, a first end of the second branch is connected to a first end of the first branch, and a second end of the second branch is connected to a second end of the first branch.
- Further, a first end of the second branch is connected to a first end of the first branch, and a second end of the second branch is not connected to a second end of the first branch.
- One embodiment of the present disclosure provides a display device including the above-mentioned array substrate.
- The present disclosure has following advantageous effect.
- The first branch of the data line overlaps the gate line, and the second branch overlaps the gate electrode of the TFT. Since the width of the first branch is less than the width of the non-overlapping portion of the data line that does not overlap the gate line, thus, an area of an overlapping region between the data line and the gate line may be reduced and the coupling capacitance therebetween may be reduced, thereby improving a display effect of the display device including the array substrate.
-
FIG. 1 is a schematic view showing an array substrate according to one embodiment of the present disclosure; -
FIG. 2 is a sectional view of the array substrate taken along a line A1-A2 inFIG. 1 ; -
FIG. 3 is a schematic view showing an array substrate according to another embodiment of the present disclosure; -
FIG. 4 is a schematic view showing a data line according to one embodiment of the present disclosure; and -
FIG. 5 is a schematic view showing a gate line according to one embodiment of the present disclosure. - In order to prevent a display effect of a display panel from being adversely affected due to signal delay caused by the coupling capacitance present at an overlapping portion between a gate line and a data line in an existing array substrate, one embodiment of the present disclosure provides an array substrate including a plurality of gate lines, a plurality of data lines intersecting with the gate lines, and a plurality of TFTs connected to the gate lines and the data lines. The data line is divided into a first branch and a second branch at a predetermined region where an intersection of the data line and the gate line is located. The first branch overlaps the gate line. The first branch has a width less than a width of a non-overlapping portion of the data line which does not overlap the gate lines. The second branch overlaps a gate electrode of the TFT, and serves as, or is connected to, a source electrode of the TFT.
- The predetermined region where the intersection of the data line and the gate line refers to an overlapping region between the data line and the gate line, or a region adjacent to the overlapping region.
- The non-overlapping portion of the data line that does not overlap the gate line refers to a portion of the data line rather than the first branch and the second branch.
- In one embodiment, the first branch of the data line overlaps the gate line and the second branch overlaps the gate electrode of the TFT, i.e., an actual overlapping region between the data line and the gate line is an overlapping region between the first branch and the gate line. Since the width of the first branch is less than a width of the non-overlapping portion of the data line that does not overlap the gate line, thus, an area of the overlapping region between the data line and the gate line may be reduced and the coupling capacitance between the data line and the gate line may be reduced, thereby improving a display effect of a display device including the array substrate of one embodiment of the present disclosure.
- In one embodiment of the present disclosure, the second branch of the data line overlaps the gate electrode of the TFT, and serves as, or is connected to, the source electrode of the TFT. Optionally, the second branch of the data line has a width less than the width of the non-overlapping portion of the data line that does not overlap the gate line, so as to reduce the coupling capacitance between the gate electrode and the source electrode of the TFT.
- In order to further reduce the area of the overlapping region between the data line and the gate line, optionally, the gate line includes a thinning portion. The thinning portion overlaps the first branch. The thinning portion has a width less than a width of a non-overlapping portion of the gate line that does not overlap the data line.
- Optionally, the gate line is provided with a widening portion. The widening portion has a width greater than the width of the non-overlapping portion of the gate line that does not overlap the data line. The widening portion overlaps the second branch as the gate electrode of the TFT. A part of the widening portion is located in a gap between the first branch and the second branch.
- Further, a region is formed between an edge of the first branch which is located adjacent to the second branch and an extension line of an edge of the non-overlapping portion of the data line which does not overlap the gate line and which is located adjacent to the second branch, and a part of the widening portion is located in the region, so as to reduce an area of a pixel region occupied by the TFT, thereby increasing an aperture ratio of a pixel and further improving the display effect of the display device.
- In order to make the objects, the technical solutions and the advantages of the present disclosure more apparent, the present disclosure will be described hereinafter in conjunction with the drawings and the embodiments.
-
FIG. 1 is a schematic view showing an array substrate according to one embodiment of the present disclosure.FIG. 2 is a sectional view of the array substrate taken along a line A1-A2 inFIG. 1 .FIG. 4 is a schematic view showing a data line according to one embodiment of the present disclosure.FIG. 5 is a schematic view showing a gate line according to one embodiment of the present disclosure. - The array substrate includes a plurality of
gate lines 10, a plurality ofdata lines 20 intersecting with thegate lines 10, and a plurality of TFTs connected to thegate lines 10 and thedata lines 20. - The
data line 20 is divided into afirst branch 20 a and asecond branch 20 b at a predetermined region where an intersection of thedata line 20 and thegate line 10 is located. A first end of thesecond branch 20 b is connected to a first end of thefirst branch 20 a, and a second end of thesecond branch 20 b is connected to a second end of thefirst branch 20 a. In other words, as viewed from top to bottom when the array substrate is located at position shown inFIG. 1 , thedata line 20 is divided into thefirst branch 20 a and thesecond branch 20 b at a part of thedata line 20 adjacent to the intersection of thedata line 20 and thegate line 10; and thefirst branch 20 a and thesecond branch 20 b converge after they pass through the intersection. Of course, in another embodiment of the present disclosure, thefirst branch 20 a and thesecond branch 20 b may not converge after they pass through the intersection, i.e., the first end of thesecond branch 20 b is connected to the first end of thefirst branch 20 a, and the second end of thesecond branch 20 b is not connected to the second end of thefirst branch 20 a. - As viewed from left to right when the array substrate is located at the position shown in
FIG. 1 , thegate line 10 is thinned at a part of thegate line 10 adjacent to the intersection of thegate line 10 and thedata line 20, thereby forming a thinningportion 10 a. The thinningportion 10 a overlaps thefirst branch 20 a. In agap 20 c between thefirst branch 20 a and thesecond branch 20 b of thedata line 20, a part of thegate line 10 is thickened, thereby forming a widening portion lob. In other words, a part of the wideningportion 10 b is located in thegap 20 c between thefirst branch 20 a and thesecond branch 20 b. The wideningportion 10 b overlaps thesecond branch 20 b as the gate electrode of the TFT. - In this embodiment, a
region 43 is formed between anedge 41 of thefirst branch 20 a which is located adjacent to thesecond branch 20 b and anextension line 42 of an edge of the non-overlapping portion of thedata line 20 which does not overlap thegate line 10 and which is located adjacent to thesecond branch 20 b, and a part of the wideningportion 10 b is located in theregion 43, so as to reduce the area of the pixel region occupied by the TFT and increase the aperture ratio of the pixel, thereby further improving the display effect of the display device. - Referring to
FIG. 4 , both of a width W20 a of thefirst branch 20 a and a width W20 b of thesecond branch 20 b are less than a width W20 of the non-overlapping portion of thedata line 20 that does not overlap thegate line 10. - Referring to
FIG. 5 , a width W10 a of the thinningportion 10 a is less than a width W10 of the non-overlapping portion of thegate line 10 that does not overlap thedata line 20. A width W10 b of the wideningportion 10 b is greater than the width W10 of the non-overlapping portion of thegate line 10 that does not overlap thedata line 20. - The TFT includes the gate electrode, an
active layer 13, asource electrode 21 and adrain electrode 22. The gate electrode of the TFT is just the wideningportion 10 b, and thesource electrode 21 thereof is connected to thesecond branch 20 b of the data line. - In this embodiment, the TFT includes a U-shaped channel. Since the U-shaped channel has a large width to length ratio, thus the TFT has a large on-state current.
- The array substrate further includes a
base plate 1, agate insulating layer 12 and apixel electrode 32. Thepixel electrode 32 is in electrical connection with thedrain electrode 32 through a via-hole 31. -
FIG. 3 is a schematic view showing an array substrate according to another embodiment of the present disclosure. The array substrate in this embodiment differs from that in the previous embodiment in that thesecond branch 20 b of the data line is directly used as the source electrode of the TFT, i.e., a portion indicated by thereference sign 21 inFIG. 1 is omitted. - In the above embodiments, the
gate line 10 and thedata line 20 may be made of a metallic material such as Cu, Al, Mo, Ti, Cr and W, or an alloy thereof. Thegate line 10 may be of a single-layered structure or a multi-layered structure, e.g., Mo/Al/Mo, Ti/Cu/Ti or Mo/Ti/Cu. - In the above embodiments, the
gate insulating layer 12 may be made of SiN or SiO. Thegate insulating layer 12 may be of a single-layered structure or a multi-layered structure, e.g., SiO/SiN. - In the above embodiments, the
active layer 13 may be made of amorphous silicon, polycrystalline silicon, microcrystalline silicon or an oxide semiconductive material. - In the above embodiments, the array substrate may further include a
passivation layer 30 made of an inorganic matter such as SiN. - In the above embodiments, the
pixel electrode 32 may be made of ITO, IZO, or any other transparent metal oxide conductive material. - A method for manufacturing the array substrate will be described hereinafter in conjunction with
FIG. 2 . The method includes steps of: - (1) depositing a metal layer, e.g., Al, on the
base plate 1 by sputtering, applying a photoresist onto the metal layer, and exposing, developing and etching the photoresist so as to form a pattern of thegate line 10; - (2) depositing the
gate insulating layer 12, e.g., SiN, by PECVD; - (3) depositing a semiconductor layer, e.g., continuously depositing a-Si and n+a-Si by PECVD or depositing IGZO by sputtering, applying a photoresist onto the semiconductor layer, and exposing, developing and etching the photoresist so as to form a pattern of the
active layer 13; and - (4) depositing a metal layer, e.g., Al, by sputtering, applying a photoresist onto the metal layer, and exposing, developing and etching the photoresist to form patterns of the
data line 20, thesource electrode 21 and thedrain electrode 22. - The method may further include steps of:
- (5) depositing the
passivation layer 30, e.g., SiN, by PECVD, applying a photoresist onto thepassivation layer 30, and exposing, developing and etching the photoresist to form the via-hole 31 through which thedrain electrode 22 of a first TFT is exposed; and - (6) depositing a layer of a transparent metal oxide conductive material, e.g., ITO, by sputtering, applying a photoresist onto the layer, and exposing, developing and etching the photoresist to form a pattern of the
pixel electrode 32. - The present disclosure further provides a display device including the above-mentioned array substrate.
- The above are merely the preferred embodiments of the present disclosure. It should be appreciated that, a person skilled in the art may make further improvements and modifications without departing from the principle of the present disclosure, and these improvements and modifications shall also fall within the scope of the present disclosure.
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420313509.7 | 2014-06-12 | ||
CN201420313509.7U CN203870366U (en) | 2014-06-12 | 2014-06-12 | Array substrate and display device |
CN201420313509U | 2014-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
US9196637B1 US9196637B1 (en) | 2015-11-24 |
US20150364494A1 true US20150364494A1 (en) | 2015-12-17 |
Family
ID=51651298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/549,086 Active US9196637B1 (en) | 2014-06-12 | 2014-11-20 | Array substrate and display device |
Country Status (2)
Country | Link |
---|---|
US (1) | US9196637B1 (en) |
CN (1) | CN203870366U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9716114B2 (en) | 2014-11-17 | 2017-07-25 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate with high qualified rate and manufacturing method thereof |
US20170307949A1 (en) * | 2015-11-05 | 2017-10-26 | Boe Technology Group Co., Ltd. | Array substrate and display device |
US20230041639A1 (en) * | 2020-10-30 | 2023-02-09 | Beijing Boe Display Technology Co., Ltd. | Array Substrate and Manufacturing Method Thereof, and Display Device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106154648B (en) * | 2015-03-24 | 2021-03-19 | 群创光电股份有限公司 | Display panel |
CN106711150A (en) * | 2016-12-30 | 2017-05-24 | 武汉华星光电技术有限公司 | LTPS array substrate and manufacturing method therefor |
CN107845644B (en) * | 2017-09-27 | 2021-01-26 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101626029B1 (en) * | 2009-02-18 | 2016-06-01 | 삼성디스플레이 주식회사 | Thin film transistor panel |
US9557619B2 (en) * | 2011-09-26 | 2017-01-31 | Apple Inc. | Data line-to-pixel decoupling |
-
2014
- 2014-06-12 CN CN201420313509.7U patent/CN203870366U/en not_active Expired - Lifetime
- 2014-11-20 US US14/549,086 patent/US9196637B1/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9716114B2 (en) | 2014-11-17 | 2017-07-25 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate with high qualified rate and manufacturing method thereof |
US20170307949A1 (en) * | 2015-11-05 | 2017-10-26 | Boe Technology Group Co., Ltd. | Array substrate and display device |
US11493813B2 (en) * | 2015-11-05 | 2022-11-08 | Boe Technology Group Co., Ltd. | Array substrate and display device |
US20230017104A1 (en) * | 2015-11-05 | 2023-01-19 | Boe Technology Group Co., Ltd. | Array substrate and display device |
US12092934B2 (en) * | 2015-11-05 | 2024-09-17 | Boe Technology Group Co., Ltd. | Array substrate and display device |
US20230041639A1 (en) * | 2020-10-30 | 2023-02-09 | Beijing Boe Display Technology Co., Ltd. | Array Substrate and Manufacturing Method Thereof, and Display Device |
US11921388B2 (en) * | 2020-10-30 | 2024-03-05 | Beijing Boe Display Technology Co., Ltd. | Array substrate and manufacturing method thereof, and display device |
Also Published As
Publication number | Publication date |
---|---|
CN203870366U (en) | 2014-10-08 |
US9196637B1 (en) | 2015-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9196637B1 (en) | Array substrate and display device | |
US10139685B2 (en) | Array substrate, manufacturing method thereof and display device | |
US9799679B2 (en) | Thin film transistor array substrate, its manufacturing method and display device | |
US10290661B2 (en) | Thin film transistor and method of fabricating the same, array substrate and display apparatus | |
CN106960881B (en) | Thin film transistor and preparation method thereof | |
US9543324B2 (en) | Array substrate, display device and manufacturing method of the array substrate | |
US9613986B2 (en) | Array substrate and its manufacturing method, display device | |
EP3089213B1 (en) | Array substrate, manufacturing method therefor, and display device | |
US9252159B2 (en) | Array substrate and fabrication method thereof, and display device | |
WO2015188492A1 (en) | Array substrate and display device | |
US10381384B2 (en) | Array substrate, method for manufacturing array substrate, display panel and display device | |
US10032800B2 (en) | Array substrate and display device | |
US10431602B2 (en) | Array substrate, display panel, and display apparatus | |
US20180175073A1 (en) | Array substrate, manufacturing method thereof and display device | |
US20160013209A1 (en) | Thin Film Transistor and Mnaufacturing Method Thereof, Array Substrate and Display Device | |
CN107742648A (en) | Thin film transistor (TFT), array base palte and its manufacture method and display device | |
WO2017140058A1 (en) | Array substrate, manufacturing method therefor, display panel and display apparatus | |
US10205029B2 (en) | Thin film transistor, manufacturing method thereof, and display device | |
US20180151749A1 (en) | Thin Film Transistor, Array Substrate and Methods for Manufacturing and Driving the same and Display Device | |
WO2016201778A1 (en) | Array substrate and manufacturing method therefor | |
CN110854205A (en) | Thin film transistor, manufacturing method, display panel and display device | |
US20150263050A1 (en) | Pixel Structure and Manufacturing Method thereof | |
US11233074B2 (en) | Array substrate and manufacturing method thereof | |
US20100155730A1 (en) | Thin film transistor display panel and manufacturing method thereof | |
EP3349242B1 (en) | Array substrate and manufacturing method therefor, and display apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: BOE TECHNOLOGY GROUP CO., LTD., CHINA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHENG, HONGFEI;QIAO, YONG;XIAN, JIANBO;AND OTHERS;REEL/FRAME:034222/0123 Effective date: 20140925 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |