CN107046064B - 一种薄膜晶体管 - Google Patents

一种薄膜晶体管 Download PDF

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CN107046064B
CN107046064B CN201710096247.1A CN201710096247A CN107046064B CN 107046064 B CN107046064 B CN 107046064B CN 201710096247 A CN201710096247 A CN 201710096247A CN 107046064 B CN107046064 B CN 107046064B
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韩约白
虞晓江
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Wuhan China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供了一种薄膜晶体管，其中，包括遮光层和多晶硅层，所述遮光层设于所述多晶硅层之下；俯视时所述遮光层与所述多晶硅层之间存在夹角，所述夹角为锐角或钝角。本发明通过合理设计遮光层形状，突破了工艺制程的限制，可在更大的范围内减小多晶硅层在遮光层边缘爬坡位置的倾斜度，达到改善多晶硅导电特性的效果。

Description

一种薄膜晶体管
技术领域
本发明涉及薄膜晶体管领域，特别地涉及一种低温多晶硅面板的遮光层。
背景技术
具有高分辨率、高迁移率和低功耗等诸多优点的低温多晶硅面板已经广泛应用在目前的平板显示产品中，例如苹果、三星、华为、小米及魅族等各大手机和平板电脑上。
但是，由于低温多晶硅器件的制程复杂，目前多采用顶栅结构，即需要在玻璃表面首先成膜一层作为遮光层(Shading Layer，SL)的金属膜。然而，由于多晶硅层在遮光层边缘爬坡位置有一定的倾斜角度(即坡度)，在准分子激光晶化(Excimer Laser Annealing，ELA)过程中容易造成多晶硅层的损伤，从而影响多晶硅层的电学特性，即遮光层边缘爬坡位置的倾斜角度过大会引起多晶硅层在遮光层边缘位置的导电性异常，通过减小遮光层边缘的倾斜角度可以明显改善低温多晶硅层在遮光层边缘爬坡处的导电特性，从而减少例如亮暗点等不良。但由于设备、制程能力的限制，无法更大限度地减小遮光层边缘的倾斜角度。
申请号CN201410837376.8专利文件提供了一种低温多晶硅薄膜晶体管中设置遮光层的技术方案，而并未提供改善有缘层(即多晶硅层)导电特性的技术方案。
因此，需要提出一种新的薄膜晶体管，使得多晶硅层在遮光层边缘爬坡的倾斜角度减小，从而改善多晶硅层的导电特性。
发明内容
针对上述问题，本发明提出了一种全新的遮光层图案，可突破制程和设备的限制，更高效地改善遮光层边缘爬坡位置的倾斜角度，从而改善了多晶硅层的导电特性，提高了产品良率。
本发明提供了一种薄膜晶体管，其中，包括遮光层和多晶硅层，所述遮光层设于所述多晶硅层之下；俯视时所述遮光层与所述多晶硅层之间存在夹角，所述夹角为锐角或钝角。
如上所述的薄膜晶体管，其中，俯视时与所述多晶硅层的生长方向相平行的所述多晶硅层的边缘设为第一边，与所述多晶硅层相接触的所述遮光层的边缘设为第二边；
所述夹角是所述第一边与所述第二边之间的交角。
如上所述的薄膜晶体管，其中，所述第二边为锯齿状。
如上所述的薄膜晶体管，其中，俯视时所述遮光层为梯形。
如上所述的薄膜晶体管，其中，所述梯形的腰为所述第二边，所述梯形的上底和下底与所述第一边平行。
如上所述的薄膜晶体管，其中，俯视时所述遮光层为平行四边形。
如上所述的薄膜晶体管，其中，所述平行四边形的一边为所述第二边，与所述第二边相交的所述平行四边形的另一边与所述第一边平行。
如上所述的薄膜晶体管，其中，所述遮光层为金属膜。
本发明将遮光层边缘设计为锯齿状，或直接将俯视下的遮光层设计为梯形或平行四边形等形状，从而使得多晶硅层和遮光层之间不是垂直设置，而是存在一定的角度(为锐角或钝角)，从而减小了多晶硅层在遮光层边缘爬坡位置的倾斜角度，改善了多晶硅层的导电特性。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1示出了现有技术中多晶硅层与遮光层位置关系的立体图；
图2为现有技术中俯视时多晶硅层垂直于遮光层时的结构示意图；
图3示出了本发明中多晶硅层与遮光层位置关系的立体图；
图4为本发明中俯视时遮光层边缘为锯齿状时的结构示意图；
图5为本发明中俯视时遮光层为梯形时的结构示意图；
图6为本发明中俯视时遮光层为平行四边形时的结构示意图；
1-遮光层；
2-多晶硅层；
3-栅极；
4-源极。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
看图1和图3，图中多晶硅层2上标出的箭头方向表示多晶硅层2的生长方向(也可称为多晶硅层2的延伸方向)。在本发明中首先设定与多晶硅层2的生长方向相平行的边缘为第一边6，遮光层1上与多晶硅层2相接触的边缘为第二边7。
看图2中俯视视角下，现有技术中多晶硅层2与遮光层1相垂直，即第一边6与第二边7之间的夹角θ为90°。结合图1，此时遮光层1的制程使其边缘爬坡位置5的倾斜角为α，此处的倾斜角α可理解为主视视角下遮光层1的边缘爬坡位置5的坡度角。L为平行多晶硅层2的生长方向的爬坡长度，h为遮光层1的厚度，现有技术中多晶硅层2在边缘位置5的倾斜角α与L及h的三角函数关系为sin(α)＝h/L，即倾斜角α＝arcsin(h/L)。此时倾斜角较大，准分子激光晶化过程中容易引起多晶硅层2的损伤，从而导致多晶硅层2在遮光层1边缘爬坡位置5的导电性异常。
本发明为了解决上述现有技术中存在的问题，提供了一种薄膜晶体管，其中，包括遮光层1和多晶硅层2，遮光层1设在多晶硅层2之下，俯视时遮光层1与与多晶硅层2之间存在夹角θ，所述夹角θ为锐角或钝角。此时，避免使用现有技术中将遮光层1和多晶硅层2垂直设置的技术方案。而使二者之间在俯视视角下存在的夹角θ为锐角或钝角，即在图3中，第一边6和第二边7的交角θ为锐角或钝角。看图4，优选实施例中与第一边6相交的第二边7设为锯齿状。
看图5，优选实施例中俯视时遮光层1设为梯形。其中，梯形的腰为第二边，梯形的上底和下底与第一边相平行。
看图6，优选实施例中俯视时遮光层1设为平行四边形。其中，平行四边形的一边为第二边，与第二边相交的平行四边形的另一边与第一边平行。
按照本发明的技术方案，看图4、图5和图6，在俯视时当遮光层1与多晶硅层2垂直的第二边设计为锯齿状、将遮光层1设计为梯形或将遮光层1设计为平行四边形时，其主要目的是相同的，都是在多晶硅层2与遮光层1之间形成夹角θ，且θ不等于90°，为锐角或钝角，其中如此设计θ的原理如下：
看图3，相对于现有技术，此时多晶硅层2沿其生长方向的等效爬坡长度为L’＝L/sin(θ)，即第一边6的长度为L’，等效倾斜角为β，β与L’及h三者的三角函数关系为sin(β)＝h/L’＝sin(θ)×h/L＜sin(α)，即sin(β)＝sin(α)×sin(θ)，则等效倾斜角β＝arcsin(sin(α)×sin(θ))。因此，俯视时当遮光层1与多晶硅层2之间间为非垂直关系(即θ角为锐角或钝角)时，等效倾斜角β小于现有技术中的倾斜角α，即可以减小多晶硅层2在遮光层1边缘爬坡位置5处的爬坡倾斜度，从而改善多晶硅层2在此处的导电特性。
优选实施例中遮光层1为金属膜。
本发明通过合理设计遮光层1的形状，突破了工艺制程的限制，通过θ角的大小调节多晶硅层2相对于遮光层1的倾斜度，可在更大的范围内减小多晶硅层2在遮光层1的边缘爬坡位置5的倾斜度，达到改善多晶硅层2导电特性的效果。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (2)

1.一种薄膜晶体管，其特征在于，包括遮光层和多晶硅层，所述遮光层设于所述多晶硅层之下；所述多晶硅层由准分子激光晶化工艺制备；
俯视时所述遮光层与所述多晶硅层之间存在夹角，所述夹角为锐角或钝角；
俯视时与所述多晶硅层的生长方向相平行的所述多晶硅层的边缘设为第一边，与所述多晶硅层相接触的所述遮光层的边缘设为第二边；
所述夹角是所述第一边与所述第二边之间的交角；
所述第二边为锯齿状。
2.根据权利要求1所述的薄膜晶体管，其特征在于，所述遮光层为金属膜。
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