JP6460584B2 - Ltpsアレイ基板 - Google Patents
Ltpsアレイ基板 Download PDFInfo
- Publication number
- JP6460584B2 JP6460584B2 JP2017531498A JP2017531498A JP6460584B2 JP 6460584 B2 JP6460584 B2 JP 6460584B2 JP 2017531498 A JP2017531498 A JP 2017531498A JP 2017531498 A JP2017531498 A JP 2017531498A JP 6460584 B2 JP6460584 B2 JP 6460584B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- array substrate
- transparent conductive
- light shielding
- ltps array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 48
- 239000010410 layer Substances 0.000 claims description 185
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical group [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 description 11
- 238000000059 patterning Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910004286 SiNxOy Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
12 遮光層
14 バッファ層
16 ポリシリコン
18 ゲート絶縁層
22 走査線
24 絶縁層
26 データ線
28 ソースドレイン電極
30 平坦層
32 底層透明導電層
34 保護層
36 上層透明導電層
38 第三金属層
221 延伸領域
381 第一領域
382 第二領域
Claims (6)
- 複数個の低温ポリシリコン薄膜トランジスタと、
底層透明導電層と、
前記底層透明導電層上に形成された保護層と、
前記保護層上に形成された上層透明導電層と、からなるLTPSアレイ基板であって、
前記各低温ポリシリコン薄膜トランジスタは、
基板と、
前記基板上に形成され、第一方向に延在し、かつ、前記第一方向に直交する第二方向に所定幅Hを有するようにパターン化された遮光層と、
前記基板および前記遮光層上に形成されたバッファ層と、
前記バッファ層上に形成され、パターン化されたポリシリコン層と、
前記ポリシリコン層および前記バッファ層上に形成されたゲート絶縁層と、
前記ゲート絶縁層上に形成され、前記第一方向に延在する走査線および前記走査線から前記第二方向に延伸する延伸領域であって前記ポリシリコン層に前記ゲート絶縁膜を介して重なることでゲート電極となるようにパターン化された第一金属層と、
前記ゲート絶縁層および前記第一金属層上に形成された絶縁層と、
前記絶縁層上に形成され、前記ゲート絶縁膜を通して前記ポリシリコン層に導通したソース電極および前記第二方向に延在するデータ線としてパターン化された第二金属層と、
前記絶縁層および前記第二金属層上に形成された平坦層と、からなり、
平面視したときに、前記走査線および前記ソース電極は前記遮光層に重なる位置に配設されており、
前記遮光層の前記所定幅Hは、前記ソース電極の前記走査線から遠い側の辺と前記走査線との距離Sよりも大きく、かつ、
平面視したときに、前記遮光層の前記走査線から遠い側の辺は、前記ソース電極の前記走査線から遠い側の辺と重なり、
前記底層透明導電層は前記平坦層上に形成され、
さらに、
前記底層透明導電層と前記保護層の間には、前記第一方向に延在する第二領域と前記第二方向に延在する第一領域を形成するようにパターン化され、静電容量式タッチセンサー電極となる第三金属層が設けられ、
前記第一領域は前記データ線よりも幅広であって、平面視したときに、前記第一領域が前記データ線の全体を覆うように重なっており、
前記第二領域は、前記走査線とは前記ソース電極を間にして反対側にあり、かつ、
平面視したときに、前記第二領域の前記走査線に近い側の一辺は、前記遮光層に重なっており、かつ、前記第二領域は、前記ポリシリコン層および前記走査線には重なっておらず、
かつ、平面視したときに、前記延伸領域のうちの前記遮光層に重ならない部分が前記第二領域に重なっていて、前記延伸領域の全体は、前記遮光層と前記第二領域とに重なっている
ことを特徴とするLTPSアレイ基板。 - 請求項1に記載のLTPSアレイ基板において、
前記第二金属層はバイアホールによって前記ポリシリコン層と電気的に接続される
ことを特徴とするLTPSアレイ基板。 - 請求項1に記載のLTPSアレイ基板において、
前記上層透明導電層は前記保護層に形成されるとともに、バイアホールによって前記ソース電極と電気的に接続される
ことを特徴とするLTPSアレイ基板。 - 請求項1に記載のLTPSアレイ基板において、
前記ゲート絶縁層は、二酸化ケイ素、窒素ケイ素、および、窒化酸化シリコンのうちの一種から生成される
ことを特徴とするLTPSアレイ基板。 - 請求項1に記載のLTPSアレイ基板において、
前記第一金属層と前記第二金属層の材料はモリブデンアルミ合金、クロム金属である
ことを特徴とするLTPSアレイ基板。 - 請求項1に記載のLTPSアレイ基板において、
前記底層透明導電層と前記上層透明導電層は、透明導電の材料によってなる
ことを特徴とするLTPSアレイ基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410784820.4A CN104538400B (zh) | 2014-12-16 | 2014-12-16 | 一种ltps阵列基板 |
CN201410784820.4 | 2014-12-16 | ||
PCT/CN2014/095326 WO2016095263A1 (zh) | 2014-12-16 | 2014-12-29 | 一种ltps阵列基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018502321A JP2018502321A (ja) | 2018-01-25 |
JP6460584B2 true JP6460584B2 (ja) | 2019-01-30 |
Family
ID=52853903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017531498A Expired - Fee Related JP6460584B2 (ja) | 2014-12-16 | 2014-12-29 | Ltpsアレイ基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9620536B2 (ja) |
JP (1) | JP6460584B2 (ja) |
KR (1) | KR101978584B1 (ja) |
CN (1) | CN104538400B (ja) |
GB (1) | GB2548753B (ja) |
WO (1) | WO2016095263A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105137633B (zh) * | 2015-07-29 | 2018-04-20 | 武汉华星光电技术有限公司 | 显示面板及薄膜晶体管阵列基板 |
CN105093755A (zh) * | 2015-08-28 | 2015-11-25 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及液晶显示面板 |
TWI540370B (zh) * | 2015-09-07 | 2016-07-01 | 友達光電股份有限公司 | 畫素結構 |
CN105336745B (zh) * | 2015-09-30 | 2019-01-22 | 深圳市华星光电技术有限公司 | 低温多晶硅tft基板 |
KR102549444B1 (ko) * | 2016-06-16 | 2023-06-29 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN105932068A (zh) * | 2016-06-30 | 2016-09-07 | 上海中航光电子有限公司 | 薄膜晶体管、显示面板及显示装置 |
CN106206622B (zh) * | 2016-09-23 | 2019-05-10 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN107046064B (zh) * | 2017-02-22 | 2020-01-03 | 武汉华星光电技术有限公司 | 一种薄膜晶体管 |
CN107342260B (zh) * | 2017-08-31 | 2020-08-25 | 京东方科技集团股份有限公司 | 一种低温多晶硅tft阵列基板制备方法及阵列基板 |
CN107910378B (zh) | 2017-11-14 | 2021-01-26 | 京东方科技集团股份有限公司 | Ltps薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN108803170B (zh) * | 2018-06-22 | 2021-10-08 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN109411484A (zh) * | 2018-10-23 | 2019-03-01 | 深圳市华星光电技术有限公司 | 一种阵列基板、显示装置及阵列基板的制备方法 |
KR102652572B1 (ko) * | 2018-12-03 | 2024-03-28 | 엘지디스플레이 주식회사 | 플렉서블 전계 발광 표시장치 |
CN109272882B (zh) * | 2018-12-10 | 2024-03-29 | 云赛智联股份有限公司 | 一种透明小间距led显示屏 |
CN112185248A (zh) * | 2019-07-05 | 2021-01-05 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN110706599B (zh) * | 2019-10-25 | 2022-01-25 | Tcl华星光电技术有限公司 | 显示面板及显示装置 |
CN112785917B (zh) * | 2019-11-04 | 2023-10-10 | 群创光电股份有限公司 | 电子装置 |
CN117116147A (zh) | 2019-11-04 | 2023-11-24 | 群创光电股份有限公司 | 电子装置 |
TWI721776B (zh) * | 2020-02-06 | 2021-03-11 | 友達光電股份有限公司 | 主動元件基板及其製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4737956B2 (ja) | 2003-08-25 | 2011-08-03 | 東芝モバイルディスプレイ株式会社 | 表示装置および光電変換素子 |
KR20110059776A (ko) * | 2006-06-09 | 2011-06-03 | 애플 인크. | 터치 스크린 액정 디스플레이 |
JP5360673B2 (ja) * | 2007-08-09 | 2013-12-04 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
KR100963104B1 (ko) * | 2008-07-08 | 2010-06-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP2010054769A (ja) * | 2008-08-28 | 2010-03-11 | Sony Corp | 表示装置、表示装置の製造方法、投射型表示装置および電子機器 |
KR101305378B1 (ko) * | 2010-03-19 | 2013-09-06 | 엘지디스플레이 주식회사 | 터치인식 횡전계형 액정표시장치 및 이의 제조 방법 |
KR20110111708A (ko) * | 2010-04-05 | 2011-10-12 | 삼성모바일디스플레이주식회사 | 표시장치 및 그 제조방법 |
KR101753802B1 (ko) * | 2010-09-20 | 2017-07-04 | 엘지디스플레이 주식회사 | 터치 스크린이 내장된 액정 표시장치와 이의 제조방법 |
KR101230196B1 (ko) * | 2010-10-29 | 2013-02-06 | 삼성디스플레이 주식회사 | 터치 스크린 패널 내장형 액정표시장치 |
KR20130030666A (ko) * | 2011-09-19 | 2013-03-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조방법 |
CN103268047B (zh) * | 2012-12-31 | 2015-12-09 | 厦门天马微电子有限公司 | 一种ltps阵列基板及其制造方法 |
CN103472646B (zh) * | 2013-08-30 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法和显示装置 |
US9647001B2 (en) * | 2013-09-05 | 2017-05-09 | Boe Technology Group Co., Ltd. | Array substrate, method for fabricating the same and display device |
CN103728803B (zh) * | 2013-12-26 | 2015-04-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
-
2014
- 2014-12-16 CN CN201410784820.4A patent/CN104538400B/zh active Active
- 2014-12-29 WO PCT/CN2014/095326 patent/WO2016095263A1/zh active Application Filing
- 2014-12-29 GB GB1710134.6A patent/GB2548753B/en not_active Expired - Fee Related
- 2014-12-29 JP JP2017531498A patent/JP6460584B2/ja not_active Expired - Fee Related
- 2014-12-29 US US14/426,464 patent/US9620536B2/en active Active
- 2014-12-29 KR KR1020177017249A patent/KR101978584B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
GB201710134D0 (en) | 2017-08-09 |
GB2548753B (en) | 2021-01-20 |
US9620536B2 (en) | 2017-04-11 |
GB2548753A (en) | 2017-09-27 |
CN104538400A (zh) | 2015-04-22 |
KR20170086633A (ko) | 2017-07-26 |
US20160343747A1 (en) | 2016-11-24 |
KR101978584B1 (ko) | 2019-05-14 |
JP2018502321A (ja) | 2018-01-25 |
WO2016095263A1 (zh) | 2016-06-23 |
CN104538400B (zh) | 2017-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6460584B2 (ja) | Ltpsアレイ基板 | |
KR102236129B1 (ko) | 박막 트랜지스터 어레이 기판 및 그 제조 방법 | |
US9502575B2 (en) | Oxide thin film transistor array substrate having transparent connection structure connecting source electrode and data line of oxide TFT and display panel including the same | |
JP2018063348A (ja) | 液晶表示パネルおよび液晶表示装置 | |
US9099404B2 (en) | Array substrate and manufacturing method thereof, OLED display device | |
WO2016173340A1 (zh) | 触控显示面板及其制备方法、触摸检测方法 | |
WO2016090725A1 (zh) | 一种ltps阵列基板 | |
US20120092606A1 (en) | Array substrate of fringe field switching mode liquid crystal display panel and method of manufacturing the same | |
TWI628498B (zh) | 顯示裝置及其顯示面板 | |
WO2017024708A1 (zh) | 显示基板及其制作方法、显示器件 | |
WO2020228195A1 (zh) | 显示面板及制作方法 | |
TWI578546B (zh) | 薄膜電晶體的製造方法 | |
KR20230044995A (ko) | 액정 표시 장치 | |
US9343483B2 (en) | Method for manufacturing thin film transistor array substrate | |
CN104635393A (zh) | 薄膜晶体管阵列基板和液晶显示装置 | |
WO2016029542A1 (zh) | 阵列基板及显示装置 | |
KR20120076221A (ko) | 산화물 반도체를 포함한 박막 트랜지스터 기판 | |
TW201743118A (zh) | 顯示面板 | |
WO2016110039A1 (zh) | 像素结构、阵列基板、显示面板和显示装置 | |
US10845639B2 (en) | Display device | |
KR20160020664A (ko) | 표시장치와 그 제조 방법 | |
CN107393873B (zh) | 薄膜晶体管阵列基板的制作方法 | |
KR102075934B1 (ko) | 표시패널 및 이의 제조방법 | |
JP2020129617A (ja) | 半導体装置および半導体装置の製造方法 | |
TWI843535B (zh) | 顯示面板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180518 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180813 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180824 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181112 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6460584 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |